Dr Vihar Georgiev

  • Lecturer (Electronic and Nanoscale Engineering)

telephone: +44 (0)0141 330 7659
email: Vihar.Georgiev@glasgow.ac.uk

Research interests

Biography

Dr. Vihar Petkov Georgiev received his BSs and MSc degrees in chemistry and computational chemistry from Sofia University, Bulgaria in 2004 and 2006, correspondingly. He received the Ph.D. degree from University of Oxford in 2011. In 2011, he joined the Device Modelling Group, School of Engineering, University of Glasgow, where he was a Research Associate until 2015. Currently he is a Lecturer in Electronics and Nanoscale Engineering and the Deputy Leader of the Device Modeling Group in the School of Engineering, University of Glasgow.

Research Interests

  • Transport in mesoscopic systems
  • Quantum chemistry
  • Molecular electronics and sensors
  • Transition-metal and organometallic chemistry
  • Material science 

Personal webpage

http://web.eng.gla.ac.uk/groups/devmod/index.php/people/vihar-georgiev/

 Expertise

  • Semiconductors
  • Semiconductor devices
  • Advanced CMOS technology, devices and design
  • Computational chemistry

 

On going projects

EPSRC

Quantum Electronics Device Modelling (QUANTDEVMOD)

 

HORIZON 2020  EU platform

Carbon Nanotube Composite Interconnects (CONNECT)

Revolutionary Embedded Memory for Internet of Things Devices and Energy Reduction  (REMINDER)

Stability Under Process Variability for Advanced Interconnects and Devices Beyond 7 nm Node (SUPERAID7)


Selected publications

Georgiev, V. P. , Mirza, M. M., Dochioiu, A.-I., Lema, F.-A., Amoroso, S. M., Towie, E., Riddet, C., MacLaren, D. A. , Asenov, A. and Paul, D. J. (2017) Experimental and simulation study of 1D silicon nanowire transistors using heavily doped channels. IEEE Transactions on Nanotechnology, 16(5), pp. 727-735. (doi:10.1109/TNANO.2017.2665691)

Georgiev, V.P. and McGrady, J.E. (2011) The influence of low-symmetry distortions on electron transport through metal atom chains: when is a molecular wire really broken? Journal of the American Chemical Society, 133(32), pp. 12590-12599. (doi:10.1021/ja2028475)

Georgiev, V. P., Amoroso, S. M., Ali, T. M., Vila-Nadal, L. , Busche, C., Cronin, L. and Asenov, A. (2015) Comparison between bulk and FDSOI POM flash cell: a multiscale simulation study. IEEE Transactions on Electron Devices, 62(2), pp. 680-684. (doi:10.1109/TED.2014.2378378)

Georgiev, V. P. , Mirza, M. M., Dochioiu, A.-I., Lema, F.-A., Amoroso, S. M., Towie, E., Riddet, C., MacLaren, D. A. , Asenov, A. and Paul, D. J. (2016) Experimental and Simulation Study of a High Current 1D Silicon Nanowire Transistor Using Heavily Doped Channels. In: 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Toulouse, France, 9-12 Oct 2016, ISBN 9781509043521 (doi:10.1109/NMDC.2016.7777084)

Al-Ameri, T. , Georgiev, V. P. , Sadi, T., Wang, Y., Adamu-Lema, F., Wang, X., Amoroso, S. M., Towie, E., Brown, A. and Asenov, A. (2017) Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit. Solid-State Electronics, 129, pp. 73-80. (doi:10.1016/j.sse.2016.12.015)

Georgiev, V.P., Towie, E.A. and Asenov, A. (2013) Impact of precisely positioned dopants on the performance of an ultimate silicon nanowire transistor: a full three-dimensional NEGF simulation study. IEEE Transactions on Electron Devices, 60(3), pp. 965-971. (doi:10.1109/TED.2013.2238944)

Busche, C. et al. (2014) Design and fabrication of memory devices based on nanoscale polyoxometalate clusters. Nature, 515(7528), pp. 545-549. (doi:10.1038/nature13951) (PMID:25409147)


Grants

  • EPSRC First Grant Scheme: Quantum Electronics Device Modelling (QUANTDEVMOD) - 2017/2018
  • Glasgow Research Partnership in Engineering (GRPE) - 2016
  • Glasgow Research Partnership in Engineering (GRPE) - 2015
  • Principal’s Early Career Mobility Fund - 2015

Supervision

PhD students:

  • Joseph McGhee: Diamond electronic devices in space: a combined experimental and simulation study (Ph.D., 2016-to date)
  • Talib Al-Ameri: Simulations of ultra-scaled Si nanowire transistors (Ph.D., 2014-to date)

Undergraduate students:

  • Serban-George Buliga (Undergraduate student - BEng., 2017 - to date)
  • Michael Baxter   (Undergraduate student - BEng., summer 2017 )
  • Jack Smith (PhD student  summer 2017 )
  • Alexandru-Iustin Dochioiu (Undergraduate student - BEng., 2015-2017) 
  • Aleksandar Angelov (Undergraduate student) - Summer 2016

Teaching

  • Materials 1 (ENG 1033)
  • Engineering Mathematics 1 (ENG 1063)
  • Team Design Project 3 (ENG 3049)

Additional information

I am looking for strong candidates from China interested to pursue a PhD in Device Modeling Group group. To learn more about the application process follow the link The China Scholarship Council. The deadline for applications is 31st of January 2018 but the potential candidates are advised to contact Dr. Georgiev early.

Talented and passionate Ph.D. students and postdoctoral researchers are always welcomed to join our group. I would recommend potential candidates to discuss their research plan with me.

Ph.D. Opportunities:

For prospective PhD students, the detailed application process is available at: http://www.gla.ac.uk/colleges/scienceengineering/graduateschool/postgraduateresearchstudy/howtoapply/

Fellowship Opportunities:

 Information about the various fellowship, the application procedure and closing dates, can be found via the following links:

Please contact me if you are interested in applying for the Research Fellowships.

 

Online presentations:


All publications

List by: Type | Date

Jump to: 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2004
Number of items: 52.

2017

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Does a Nanowire Transistor Follow the Golden Ratio? A 2D Poisson-Schrödinger/3D Monte Carlo Simulation Study. In: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan, 7-9 Sept 2017, (doi:10.23919/SISPAD.2017.8085263)

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Simulation study of vertically stacked lateral Si nanowires transistors for 5 nm CMOS applications. IEEE Journal of the Electron Devices Society, 5(6), pp. 466-472. (doi:10.1109/JEDS.2017.2752465)

Georgiev, V. P. , Mirza, M. M., Dochioiu, A.-I., Lema, F.-A., Amoroso, S. M., Towie, E., Riddet, C., MacLaren, D. A. , Asenov, A. and Paul, D. J. (2017) Experimental and simulation study of 1D silicon nanowire transistors using heavily doped channels. IEEE Transactions on Nanotechnology, 16(5), pp. 727-735. (doi:10.1109/TNANO.2017.2665691)

Berrada, S., Lee, J., Georgiev, V. and Asenov, A. (2017) Effect of the Quantum Mechanical Tunneling on the Leakage Current in Ultra-scaled Si Nanowire Transistors. 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017. (Accepted for Publication)

Liang, J., Lee, J., Berrada, S., Georgiev, V. , Asenov, A., Azemard-Crestani, A. and Todri-Sanial, A. (2017) Atomistic to Circuit Level Modeling of Defective Doped SWCNTs with Contacts for On-Chip Interconnect Application. In: 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017, (Accepted for Publication)

Thirunavukkarasu, V. et al. (2017) Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs. Superlattices and Microstructures, (doi:10.1016/j.spmi.2017.07.020) (In Press)

Medina-Bailon, C., Sadi, T., Sampedro, C., Padilla, J.L., Godoy, A., Donetti, L., Georgiev, V. , Gamiz, F. and Asenov, A. (2017) Assessment of Gate Leakage Mechanism Utilizing Multi-Subband Ensemble Monte Carlo. In: 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Athens, Greece, 03-05 Apr 2017, pp. 144-147. ISBN 9781509053148 (doi:10.1109/ULIS.2017.7962585)

Lee, J. et al. (2017) Atoms-to-Circuits Simulation Investigation of CNT Interconnects for Next Generation CMOS Technology. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, (Accepted for Publication)

Lee, J. et al. (2017) The Impact of Vacancy Defects on CNT Interconnects: From Statistical Atomistic Study to Circuit Simulations. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, (Accepted for Publication)

Al-Ameri, T. , Georgiev, V. P. , Sadi, T., Wang, Y., Adamu-Lema, F., Wang, X., Amoroso, S. M., Towie, E., Brown, A. and Asenov, A. (2017) Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit. Solid-State Electronics, 129, pp. 73-80. (doi:10.1016/j.sse.2016.12.015)

Lee, J., Sadi, T., Georgiev, V. P. , Todri-Sanial, A. and Asenov, A. (2017) A Hierarchical Model for CNT and Cu-CNT Composite Interconnects: From Density Functional Theory to Circuit-Level Simulations. International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017. (Unpublished)

Adamu-Lema, F., Duan, M. , Navarro, C., Georgiev, V. , Cheng, B., Wang, X., Millar, C., Gamiz, F. and Asenov, A. (2017) Simulation Based DC and Dynamic Behaviour Characterization of Z2FET. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, (In Press)

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Position-Dependent Performance in 5 nm Vertically Stacked Lateral Si Nanowires Transistors. International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017.

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Variability-Aware Simulations of 5 nm Vertically Stacked Lateral Si Nanowires Transistors. International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017.

Duan, M. , Adamu-Lema, F., Cheng, B., Navarro, C., Wang, X., Georgiev, V. , Gamiz, F., Millar, C. and Asenov, A. (2017) 2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, (In Press)

Todri-Sanial, A. et al. (2017) A survey of carbon nanotube interconnects for energy efficient integrated circuits. IEEE Circuits and Systems Magazine, 17(2), pp. 47-62. (doi:10.1109/MCAS.2017.2689538)

Wang, X., Georgiev, V. P. , Adamu-Lema, F., Gerrer, L., Amoroso, S. M. and Asenov, A. (2017) TCAD-based design technology co-optimization for variability in nanoscale SOI FinFETs. In: Deleonibus, S. (ed.) Integrated Nanodevice and Nanosystem Fabrication. Series: Pan Stanford series on intelligent nanosystems. Routledge. ISBN 9789814774222 (In Press)

2016

Al-Ameri, T. , Georgiev, V.P. , Lema, A., Sadi, T., Towie, E., Riddet, C., Alexander, C. and Asenov, A. (2016) Performance of Vertically Stacked Horizontal Si Nanowires Transistors: A 3D Monte Carlo / 2D Poisson Schrodinger Simulation Study. In: 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Toulouse, France, 9-12 Oct 2016, ISBN 9781509043521 (doi:10.1109/NMDC.2016.7777117)

Georgiev, V. P. , Mirza, M. M., Dochioiu, A.-I., Lema, F.-A., Amoroso, S. M., Towie, E., Riddet, C., MacLaren, D. A. , Asenov, A. and Paul, D. J. (2016) Experimental and Simulation Study of a High Current 1D Silicon Nanowire Transistor Using Heavily Doped Channels. In: 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Toulouse, France, 9-12 Oct 2016, ISBN 9781509043521 (doi:10.1109/NMDC.2016.7777084)

Sadi, T., Towie, E., Nedjalkov, M., Riddet, C., Alexander, C., Wang, L., Georgiev, V. , Brown, A., Millar, C. and Asenov, A. (2016) One-Dimensional Multi-Subband Monte Carlo Simulation of Charge Transport in Si Nanowire Transistors. In: SISPAD 2016: International Conference on Simulation of Semiconductor Processes and Devices, Nuremberg, Germany, 6-8 Sept 2016, pp. 23-26. ISBN 9781509008186 (doi:10.1109/SISPAD.2016.7605139)

Al-Ameri, T. , Georgiev, V. P. , Lema, F.-A., Sadi, T., Wang, X., Towie, E., Riddet, C., Alexander, C. and Asenov, A. (2016) Impact of Strain on the Performance of Si Nanowires Transistors at the Scaling Limit: A 3D Monte Carlo/2D Poisson Schrodinger Simulation Study. In: SISPAD 2016: International Conference on Simulation of Semiconductor Processes and Devices, Nuremberg, Germany, 6-8 Sept 2016, pp. 213-216. ISBN 9781509008186 (doi:10.1109/SISPAD.2016.7605185)

Al-Ameri, T. , Georgiev, V. , Adamu-Lema, F. and Asenov, A. (2016) Influence of Quantum Confinement Effects and Device Electrostatic Driven Performance in Ultra-Scaled SixGe1-x Nanowire Transistors. In: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2016), Vienna, Austria, 25-27 Jan 2016, pp. 234-237. ISBN 9781467386104 (doi:10.1109/ULIS.2016.7440096)

Asenov, A., Wang, Y., Cheng, B., Wang, X., Asenov, P., Al-Ameri, T. and Georgiev, V.P. (2016) Nanowire Transistor Solutions for 5NM and Beyond. In: 2016 17th International Symposium on Quality Electronic Design (ISQED), Santa Clara, CA, USA, 15-16 Mar 2016, pp. 269-274. (doi:10.1109/ISQED.2016.7479212)

2015

Georgiev, V.P. , Ali, T. , Wang, Y., Gerrer, L., Amoroso, S.M. and Asenov, A. (2015) Influence of Quantum Confinement Effects over Device Performance in Circular and Elliptical Silicon Nanowire Transistors. In: 2015 International Workshop on Computational Electronics (IWCE), 2-4 Sept 2015, West Lafayette, IN, USA, (doi:10.1109/IWCE.2015.7301960)

Donetti, L., Sampedro, C., Gamiz, F., Godoy, A., Garcıa-Ruız, F. J., Towie, E., Georgiev, V. , Amoroso, S. M., Riddet, C. and Asenov, A. (2015) Multi-Subband Ensemble Monte Carlo Simulation of Si Nanowire MOSFETs. In: SISPAD: International Conference on Semiconductor Process and Device Simulations, Washington, DC, USA, 9-11 Sept 2015, pp. 353-356. ISBN 9781467378581 (doi:10.1109/SISPAD.2015.7292332)

Georgiev, V. P. , Amoroso, S. M., Gerrer, L., Adamu-Lema, F. and Asenov, A. (2015) Interplay between quantum mechanical effects and a discrete trap position in ultrascaled FinFETs. In: SISPAD 2015: International Conference on Semiconductor Process and Device Simulations, Washington, DC, USA, 9-11 Sept 2015, pp. 246-249. ISBN 9781467378581 (doi:10.1109/SISPAD.2015.7292305)

Kivisaari, P., Sadi, T., Li, J., Georgiev, V., Oksanen, J., Rinke, P. and Tulkki, J. (2015) Bipolar Monte Carlo Simulation of Hot Carriers In III-N LEDs. In: SISPAD: International Conference on Semiconductor Process and Device Simulations, Washington, DC, USA, 9-11 Sept 2015, pp. 393-396. ISBN 9781467378581 (doi:10.1109/SISPAD.2015.7292342)

Wang, Y. et al. (2015) Simulation study of the impact of quantum confinement on the electrostatically driven oerformance of n-type nanowire transistors. IEEE Transactions on Electron Devices, 62(10), pp. 3229-3236. (doi:10.1109/TED.2015.2470235)

Gerrer, L., Georgiev, V., Amoroso, S.M., Towie, E. and Asenov, A. (2015) Comparison of Si <100> and <110> crystal orientation nanowire transistor reliability using Poisson–Schrödinger and classical simulations. Microelectronics Reliability, 55(9-10), pp. 1307-1312. (doi:10.1016/j.microrel.2015.06.094)

Georgiev, V. P., Amoroso, S. M., Ali, T. M., Vila-Nadal, L. , Busche, C., Cronin, L. and Asenov, A. (2015) Comparison between bulk and FDSOI POM flash cell: a multiscale simulation study. IEEE Transactions on Electron Devices, 62(2), pp. 680-684. (doi:10.1109/TED.2014.2378378)

Al-Ameri, T. , Wang, Y., Georgiev, V.P., Adamu-Lema, F., Wang, X. and Asenov, A. (2015) Correlation between Gate Length, Geometry and Electrostatic Driven Performance in Ultra-Scaled Silicon Nanowire Transistors. In: 10th IEEE Nanotechnology Materials and Devices Conference (NMDC), Anchorage, AK, USA, 13-16 Sep 2015, pp. 30-34. ISBN 9781467393621 (doi:10.1109/NMDC.2015.7439240)

Georgiev, V. and Asenov, A. (2015) Multi-scale computational framework for evaluating of the performance of molecular based flash cells. Lecture Notes in Computer Science, 8962, pp. 196-203. (doi:10.1007/978-3-319-15585-2_22)

Sadi, T., Wang, L., Gerrer, L., Georgiev, V. and Asenov, A. (2015) Self-consistent physical modeling of SiOx-based RRAM structures. In: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA, 2-4 Sep 2015, pp. 1-4. ISBN 978069251523515 (doi:10.1109/IWCE.2015.7301981)

2014

Amoroso, S. M., Georgiev, V. P., Gerrer, L., Towie, E., Wang, X., Riddet, C., Brown, A. R. and Asenov, A. (2014) Inverse scaling trends for charge-trapping-induced degradation of FinFETs performance. IEEE Transactions on Electron Devices, 61(12), pp. 4014-4018. (doi:10.1109/TED.2014.2363212)

Busche, C. et al. (2014) Design and fabrication of memory devices based on nanoscale polyoxometalate clusters. Nature, 515(7528), pp. 545-549. (doi:10.1038/nature13951) (PMID:25409147)

Georgiev, V., Amoroso, S. and Asenov, A. (2014) 3D Multi-Subband Ensemble Monte Carlo Simulator of FinFETs and nanowire transistors. In: 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan, 9-11 Sep 2014,

Georgiev, V. P., Markov, S., Vila-Nadal, L. , Busche, C., Cronin, L. and Asenov, A. (2014) Optimization and evaluation of variability in the programming window of a flash cell with molecular metal-oxide storage. IEEE Transactions on Electron Devices, 61(6), pp. 2019-2026. (doi:10.1109/TED.2014.2315520)

Amoroso, S., Georgiev, V., Towie, E., Riddet, C. and Asenov, A. (2014) Metamorphosis of a nanowire: a 3-D coupled mode space NEGF study. In: 2014 International Workshop on Computational Electronics (IWCE), Paris, France, 3-6 June 2014, pp. 1-4. (doi:10.1109/IWCE.2014.6865854)

Georgiev, V. P., Amoroso, S. M., Vila-Nadal, L. , Busche, C., Cronin, L. and Asenov, A. (2014) FDSOI Molecular Flash Cell with Reduced Variability for Low Power Flash Applications. In: 44th European Solid-State Device Research Conference (ESSDERC), Venice, Italy, 22-26 Sep 2014, pp. 353-356. ISBN 9781479943760 (doi:10.1109/ESSDERC.2014.6948833)

2013

Vilà-Nadal, L. , Mitchell, S. G., Markov, S., Busche, C., Georgiev, V., Asenov, A. and Cronin, L. (2013) Towards polyoxometalate-cluster-based nano-electronics. Chemistry: A European Journal, 19(49), pp. 16502-16511. (doi:10.1002/chem.201301631)

Georgiev, V.P., Towie, E.A. and Asenov, A. (2013) Impact of precisely positioned dopants on the performance of an ultimate silicon nanowire transistor: a full three-dimensional NEGF simulation study. IEEE Transactions on Electron Devices, 60(3), pp. 965-971. (doi:10.1109/TED.2013.2238944)

Georgiev, V.P., Mohan, P.J., DeBrincat, D. and McGrady, J.E. (2013) Low-symmetry distortions in Extended Metal Atom Chains (EMACs): Origins and consequences for electron transport. Coordination Chemistry Reviews, 257(1), pp. 290-298. (doi:10.1016/j.ccr.2012.05.025)

Georgiev, V. P. , Markov, S., Vilà-Nadal, L. , Asenov, A. and Cronin, L. (2013) Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular Limit. In: 16th International Workshop on Computational Electronics, Nara, Japan, 4-7 June 2013, ISBN 9783901578267

Georgiev, V. P., Markov, S., Vila-Nadal, L. , Busche, C., Cronin, L. and Asenov, A. (2013) Multi-scale computational framework for the evaluation of variability in the programing window of a flash cell with molecular storage. In: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Bucharest, Romania, 16-20 Sep 2013, pp. 230-233. (doi:10.1109/ESSDERC.2013.6818861)

Georgiev, V. P. , Towie, E. A. and Asenov, A. (2013) Interaction Between Precisely Placed Dopants and Interface Roughness in Silicon Nanowire Transistors: Full 3-D NEGF Simulation Study. In: 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2013), Glasgow, Scotland, 3-5 Sep 2013, pp. 416-419. ISBN 9781467357333 (doi:10.1109/SISPAD.2013.6650663)

2012

Georgiev, V.P., Sameera, W.M.C. and McGrady, J.E. (2012) Attenuation of conductance in cobalt extended metal atom chains. Journal of Physical Chemistry C, 116(38), pp. 20163-20172. (doi:10.1021/jp304807w)

Mistry, V.S., Georgiev, V.P. and McGrady, J.E. (2012) Electron transport through molecular wires based on a face-shared bioctahedral motif. Comptes Rendus Chimie, 15(2-3), pp. 176-183. (doi:10.1016/j.crci.2011.11.001)

Mohan, P.J., Georgiev, V.P. and McGrady, J.E. (2012) Periodic trends in electron transport through extended metal atom chains: comparison of Ru3(dpa)4(NCS)2 with its first-row analogues. Chemical Science, 3(4), p. 1319. (doi:10.1039/C2SC01024K)

2011

Georgiev, V.P. and McGrady, J.E. (2011) The influence of low-symmetry distortions on electron transport through metal atom chains: when is a molecular wire really broken? Journal of the American Chemical Society, 133(32), pp. 12590-12599. (doi:10.1021/ja2028475)

2010

Georgiev, V. and McGrady, J.E. (2010) Efficient spin filtering through cobalt-based extended metal atom chains. Inorganic Chemistry, 49(12), (doi:10.1021/ic100493t)

Velinova, M., Georgiev, V., Todorova, T., Madjarova, G., Ivanova, A. and Tadjer, A. (2010) Boron–nitrogen- and boron-substituted anthracenes and -phenanthrenes as models for doped carbon-based materials. Journal of Molecular Structure: THEOCHEM, 955(1-3), pp. 97-108. (doi:10.1016/j.theochem.2010.06.003)

2004

Dietz, F., Müllen, K., Baumgarten, M., Georgiev, V.P. and Tyutyulkov, N. (2004) Structure and properties of non-classical polymers. XIV. Heteronuclear 1-D polymers with 2-azaphenalenyl radicals. Chemical Physics Letters, 389(1-3), pp. 135-139. (doi:10.1016/j.cplett.2004.03.058)

This list was generated on Sun Nov 19 17:53:17 2017 GMT.
Number of items: 52.

Articles

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Simulation study of vertically stacked lateral Si nanowires transistors for 5 nm CMOS applications. IEEE Journal of the Electron Devices Society, 5(6), pp. 466-472. (doi:10.1109/JEDS.2017.2752465)

Georgiev, V. P. , Mirza, M. M., Dochioiu, A.-I., Lema, F.-A., Amoroso, S. M., Towie, E., Riddet, C., MacLaren, D. A. , Asenov, A. and Paul, D. J. (2017) Experimental and simulation study of 1D silicon nanowire transistors using heavily doped channels. IEEE Transactions on Nanotechnology, 16(5), pp. 727-735. (doi:10.1109/TNANO.2017.2665691)

Thirunavukkarasu, V. et al. (2017) Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs. Superlattices and Microstructures, (doi:10.1016/j.spmi.2017.07.020) (In Press)

Al-Ameri, T. , Georgiev, V. P. , Sadi, T., Wang, Y., Adamu-Lema, F., Wang, X., Amoroso, S. M., Towie, E., Brown, A. and Asenov, A. (2017) Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit. Solid-State Electronics, 129, pp. 73-80. (doi:10.1016/j.sse.2016.12.015)

Todri-Sanial, A. et al. (2017) A survey of carbon nanotube interconnects for energy efficient integrated circuits. IEEE Circuits and Systems Magazine, 17(2), pp. 47-62. (doi:10.1109/MCAS.2017.2689538)

Wang, Y. et al. (2015) Simulation study of the impact of quantum confinement on the electrostatically driven oerformance of n-type nanowire transistors. IEEE Transactions on Electron Devices, 62(10), pp. 3229-3236. (doi:10.1109/TED.2015.2470235)

Gerrer, L., Georgiev, V., Amoroso, S.M., Towie, E. and Asenov, A. (2015) Comparison of Si <100> and <110> crystal orientation nanowire transistor reliability using Poisson–Schrödinger and classical simulations. Microelectronics Reliability, 55(9-10), pp. 1307-1312. (doi:10.1016/j.microrel.2015.06.094)

Georgiev, V. P., Amoroso, S. M., Ali, T. M., Vila-Nadal, L. , Busche, C., Cronin, L. and Asenov, A. (2015) Comparison between bulk and FDSOI POM flash cell: a multiscale simulation study. IEEE Transactions on Electron Devices, 62(2), pp. 680-684. (doi:10.1109/TED.2014.2378378)

Georgiev, V. and Asenov, A. (2015) Multi-scale computational framework for evaluating of the performance of molecular based flash cells. Lecture Notes in Computer Science, 8962, pp. 196-203. (doi:10.1007/978-3-319-15585-2_22)

Amoroso, S. M., Georgiev, V. P., Gerrer, L., Towie, E., Wang, X., Riddet, C., Brown, A. R. and Asenov, A. (2014) Inverse scaling trends for charge-trapping-induced degradation of FinFETs performance. IEEE Transactions on Electron Devices, 61(12), pp. 4014-4018. (doi:10.1109/TED.2014.2363212)

Busche, C. et al. (2014) Design and fabrication of memory devices based on nanoscale polyoxometalate clusters. Nature, 515(7528), pp. 545-549. (doi:10.1038/nature13951) (PMID:25409147)

Georgiev, V. P., Markov, S., Vila-Nadal, L. , Busche, C., Cronin, L. and Asenov, A. (2014) Optimization and evaluation of variability in the programming window of a flash cell with molecular metal-oxide storage. IEEE Transactions on Electron Devices, 61(6), pp. 2019-2026. (doi:10.1109/TED.2014.2315520)

Vilà-Nadal, L. , Mitchell, S. G., Markov, S., Busche, C., Georgiev, V., Asenov, A. and Cronin, L. (2013) Towards polyoxometalate-cluster-based nano-electronics. Chemistry: A European Journal, 19(49), pp. 16502-16511. (doi:10.1002/chem.201301631)

Georgiev, V.P., Towie, E.A. and Asenov, A. (2013) Impact of precisely positioned dopants on the performance of an ultimate silicon nanowire transistor: a full three-dimensional NEGF simulation study. IEEE Transactions on Electron Devices, 60(3), pp. 965-971. (doi:10.1109/TED.2013.2238944)

Georgiev, V.P., Mohan, P.J., DeBrincat, D. and McGrady, J.E. (2013) Low-symmetry distortions in Extended Metal Atom Chains (EMACs): Origins and consequences for electron transport. Coordination Chemistry Reviews, 257(1), pp. 290-298. (doi:10.1016/j.ccr.2012.05.025)

Georgiev, V.P., Sameera, W.M.C. and McGrady, J.E. (2012) Attenuation of conductance in cobalt extended metal atom chains. Journal of Physical Chemistry C, 116(38), pp. 20163-20172. (doi:10.1021/jp304807w)

Mistry, V.S., Georgiev, V.P. and McGrady, J.E. (2012) Electron transport through molecular wires based on a face-shared bioctahedral motif. Comptes Rendus Chimie, 15(2-3), pp. 176-183. (doi:10.1016/j.crci.2011.11.001)

Mohan, P.J., Georgiev, V.P. and McGrady, J.E. (2012) Periodic trends in electron transport through extended metal atom chains: comparison of Ru3(dpa)4(NCS)2 with its first-row analogues. Chemical Science, 3(4), p. 1319. (doi:10.1039/C2SC01024K)

Georgiev, V.P. and McGrady, J.E. (2011) The influence of low-symmetry distortions on electron transport through metal atom chains: when is a molecular wire really broken? Journal of the American Chemical Society, 133(32), pp. 12590-12599. (doi:10.1021/ja2028475)

Georgiev, V. and McGrady, J.E. (2010) Efficient spin filtering through cobalt-based extended metal atom chains. Inorganic Chemistry, 49(12), (doi:10.1021/ic100493t)

Velinova, M., Georgiev, V., Todorova, T., Madjarova, G., Ivanova, A. and Tadjer, A. (2010) Boron–nitrogen- and boron-substituted anthracenes and -phenanthrenes as models for doped carbon-based materials. Journal of Molecular Structure: THEOCHEM, 955(1-3), pp. 97-108. (doi:10.1016/j.theochem.2010.06.003)

Dietz, F., Müllen, K., Baumgarten, M., Georgiev, V.P. and Tyutyulkov, N. (2004) Structure and properties of non-classical polymers. XIV. Heteronuclear 1-D polymers with 2-azaphenalenyl radicals. Chemical Physics Letters, 389(1-3), pp. 135-139. (doi:10.1016/j.cplett.2004.03.058)

Book Sections

Wang, X., Georgiev, V. P. , Adamu-Lema, F., Gerrer, L., Amoroso, S. M. and Asenov, A. (2017) TCAD-based design technology co-optimization for variability in nanoscale SOI FinFETs. In: Deleonibus, S. (ed.) Integrated Nanodevice and Nanosystem Fabrication. Series: Pan Stanford series on intelligent nanosystems. Routledge. ISBN 9789814774222 (In Press)

Conference or Workshop Item

Berrada, S., Lee, J., Georgiev, V. and Asenov, A. (2017) Effect of the Quantum Mechanical Tunneling on the Leakage Current in Ultra-scaled Si Nanowire Transistors. 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017. (Accepted for Publication)

Lee, J., Sadi, T., Georgiev, V. P. , Todri-Sanial, A. and Asenov, A. (2017) A Hierarchical Model for CNT and Cu-CNT Composite Interconnects: From Density Functional Theory to Circuit-Level Simulations. International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017. (Unpublished)

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Position-Dependent Performance in 5 nm Vertically Stacked Lateral Si Nanowires Transistors. International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017.

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Variability-Aware Simulations of 5 nm Vertically Stacked Lateral Si Nanowires Transistors. International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017.

Conference Proceedings

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Does a Nanowire Transistor Follow the Golden Ratio? A 2D Poisson-Schrödinger/3D Monte Carlo Simulation Study. In: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan, 7-9 Sept 2017, (doi:10.23919/SISPAD.2017.8085263)

Liang, J., Lee, J., Berrada, S., Georgiev, V. , Asenov, A., Azemard-Crestani, A. and Todri-Sanial, A. (2017) Atomistic to Circuit Level Modeling of Defective Doped SWCNTs with Contacts for On-Chip Interconnect Application. In: 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017, (Accepted for Publication)

Medina-Bailon, C., Sadi, T., Sampedro, C., Padilla, J.L., Godoy, A., Donetti, L., Georgiev, V. , Gamiz, F. and Asenov, A. (2017) Assessment of Gate Leakage Mechanism Utilizing Multi-Subband Ensemble Monte Carlo. In: 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Athens, Greece, 03-05 Apr 2017, pp. 144-147. ISBN 9781509053148 (doi:10.1109/ULIS.2017.7962585)

Lee, J. et al. (2017) Atoms-to-Circuits Simulation Investigation of CNT Interconnects for Next Generation CMOS Technology. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, (Accepted for Publication)

Lee, J. et al. (2017) The Impact of Vacancy Defects on CNT Interconnects: From Statistical Atomistic Study to Circuit Simulations. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, (Accepted for Publication)

Adamu-Lema, F., Duan, M. , Navarro, C., Georgiev, V. , Cheng, B., Wang, X., Millar, C., Gamiz, F. and Asenov, A. (2017) Simulation Based DC and Dynamic Behaviour Characterization of Z2FET. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, (In Press)

Duan, M. , Adamu-Lema, F., Cheng, B., Navarro, C., Wang, X., Georgiev, V. , Gamiz, F., Millar, C. and Asenov, A. (2017) 2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, (In Press)

Al-Ameri, T. , Georgiev, V.P. , Lema, A., Sadi, T., Towie, E., Riddet, C., Alexander, C. and Asenov, A. (2016) Performance of Vertically Stacked Horizontal Si Nanowires Transistors: A 3D Monte Carlo / 2D Poisson Schrodinger Simulation Study. In: 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Toulouse, France, 9-12 Oct 2016, ISBN 9781509043521 (doi:10.1109/NMDC.2016.7777117)

Georgiev, V. P. , Mirza, M. M., Dochioiu, A.-I., Lema, F.-A., Amoroso, S. M., Towie, E., Riddet, C., MacLaren, D. A. , Asenov, A. and Paul, D. J. (2016) Experimental and Simulation Study of a High Current 1D Silicon Nanowire Transistor Using Heavily Doped Channels. In: 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Toulouse, France, 9-12 Oct 2016, ISBN 9781509043521 (doi:10.1109/NMDC.2016.7777084)

Sadi, T., Towie, E., Nedjalkov, M., Riddet, C., Alexander, C., Wang, L., Georgiev, V. , Brown, A., Millar, C. and Asenov, A. (2016) One-Dimensional Multi-Subband Monte Carlo Simulation of Charge Transport in Si Nanowire Transistors. In: SISPAD 2016: International Conference on Simulation of Semiconductor Processes and Devices, Nuremberg, Germany, 6-8 Sept 2016, pp. 23-26. ISBN 9781509008186 (doi:10.1109/SISPAD.2016.7605139)

Al-Ameri, T. , Georgiev, V. P. , Lema, F.-A., Sadi, T., Wang, X., Towie, E., Riddet, C., Alexander, C. and Asenov, A. (2016) Impact of Strain on the Performance of Si Nanowires Transistors at the Scaling Limit: A 3D Monte Carlo/2D Poisson Schrodinger Simulation Study. In: SISPAD 2016: International Conference on Simulation of Semiconductor Processes and Devices, Nuremberg, Germany, 6-8 Sept 2016, pp. 213-216. ISBN 9781509008186 (doi:10.1109/SISPAD.2016.7605185)

Al-Ameri, T. , Georgiev, V. , Adamu-Lema, F. and Asenov, A. (2016) Influence of Quantum Confinement Effects and Device Electrostatic Driven Performance in Ultra-Scaled SixGe1-x Nanowire Transistors. In: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2016), Vienna, Austria, 25-27 Jan 2016, pp. 234-237. ISBN 9781467386104 (doi:10.1109/ULIS.2016.7440096)

Asenov, A., Wang, Y., Cheng, B., Wang, X., Asenov, P., Al-Ameri, T. and Georgiev, V.P. (2016) Nanowire Transistor Solutions for 5NM and Beyond. In: 2016 17th International Symposium on Quality Electronic Design (ISQED), Santa Clara, CA, USA, 15-16 Mar 2016, pp. 269-274. (doi:10.1109/ISQED.2016.7479212)

Georgiev, V.P. , Ali, T. , Wang, Y., Gerrer, L., Amoroso, S.M. and Asenov, A. (2015) Influence of Quantum Confinement Effects over Device Performance in Circular and Elliptical Silicon Nanowire Transistors. In: 2015 International Workshop on Computational Electronics (IWCE), 2-4 Sept 2015, West Lafayette, IN, USA, (doi:10.1109/IWCE.2015.7301960)

Donetti, L., Sampedro, C., Gamiz, F., Godoy, A., Garcıa-Ruız, F. J., Towie, E., Georgiev, V. , Amoroso, S. M., Riddet, C. and Asenov, A. (2015) Multi-Subband Ensemble Monte Carlo Simulation of Si Nanowire MOSFETs. In: SISPAD: International Conference on Semiconductor Process and Device Simulations, Washington, DC, USA, 9-11 Sept 2015, pp. 353-356. ISBN 9781467378581 (doi:10.1109/SISPAD.2015.7292332)

Georgiev, V. P. , Amoroso, S. M., Gerrer, L., Adamu-Lema, F. and Asenov, A. (2015) Interplay between quantum mechanical effects and a discrete trap position in ultrascaled FinFETs. In: SISPAD 2015: International Conference on Semiconductor Process and Device Simulations, Washington, DC, USA, 9-11 Sept 2015, pp. 246-249. ISBN 9781467378581 (doi:10.1109/SISPAD.2015.7292305)

Kivisaari, P., Sadi, T., Li, J., Georgiev, V., Oksanen, J., Rinke, P. and Tulkki, J. (2015) Bipolar Monte Carlo Simulation of Hot Carriers In III-N LEDs. In: SISPAD: International Conference on Semiconductor Process and Device Simulations, Washington, DC, USA, 9-11 Sept 2015, pp. 393-396. ISBN 9781467378581 (doi:10.1109/SISPAD.2015.7292342)

Al-Ameri, T. , Wang, Y., Georgiev, V.P., Adamu-Lema, F., Wang, X. and Asenov, A. (2015) Correlation between Gate Length, Geometry and Electrostatic Driven Performance in Ultra-Scaled Silicon Nanowire Transistors. In: 10th IEEE Nanotechnology Materials and Devices Conference (NMDC), Anchorage, AK, USA, 13-16 Sep 2015, pp. 30-34. ISBN 9781467393621 (doi:10.1109/NMDC.2015.7439240)

Sadi, T., Wang, L., Gerrer, L., Georgiev, V. and Asenov, A. (2015) Self-consistent physical modeling of SiOx-based RRAM structures. In: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA, 2-4 Sep 2015, pp. 1-4. ISBN 978069251523515 (doi:10.1109/IWCE.2015.7301981)

Georgiev, V., Amoroso, S. and Asenov, A. (2014) 3D Multi-Subband Ensemble Monte Carlo Simulator of FinFETs and nanowire transistors. In: 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan, 9-11 Sep 2014,

Amoroso, S., Georgiev, V., Towie, E., Riddet, C. and Asenov, A. (2014) Metamorphosis of a nanowire: a 3-D coupled mode space NEGF study. In: 2014 International Workshop on Computational Electronics (IWCE), Paris, France, 3-6 June 2014, pp. 1-4. (doi:10.1109/IWCE.2014.6865854)

Georgiev, V. P., Amoroso, S. M., Vila-Nadal, L. , Busche, C., Cronin, L. and Asenov, A. (2014) FDSOI Molecular Flash Cell with Reduced Variability for Low Power Flash Applications. In: 44th European Solid-State Device Research Conference (ESSDERC), Venice, Italy, 22-26 Sep 2014, pp. 353-356. ISBN 9781479943760 (doi:10.1109/ESSDERC.2014.6948833)

Georgiev, V. P. , Markov, S., Vilà-Nadal, L. , Asenov, A. and Cronin, L. (2013) Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular Limit. In: 16th International Workshop on Computational Electronics, Nara, Japan, 4-7 June 2013, ISBN 9783901578267

Georgiev, V. P., Markov, S., Vila-Nadal, L. , Busche, C., Cronin, L. and Asenov, A. (2013) Multi-scale computational framework for the evaluation of variability in the programing window of a flash cell with molecular storage. In: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Bucharest, Romania, 16-20 Sep 2013, pp. 230-233. (doi:10.1109/ESSDERC.2013.6818861)

Georgiev, V. P. , Towie, E. A. and Asenov, A. (2013) Interaction Between Precisely Placed Dopants and Interface Roughness in Silicon Nanowire Transistors: Full 3-D NEGF Simulation Study. In: 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2013), Glasgow, Scotland, 3-5 Sep 2013, pp. 416-419. ISBN 9781467357333 (doi:10.1109/SISPAD.2013.6650663)

This list was generated on Sun Nov 19 17:53:17 2017 GMT.