Number of items: 165.
2024
Acharya, P. , Rezaei, A. , Sengupta, A. , Dutta, T. , Kumar, N. , Maciazek, P., Asenov, A. and Georgiev, V.
(2024)
Analysis of random discrete dopants embedded nanowire resonant tunnelling diodes for generation of physically unclonable functions.
IEEE Transactions on Nanotechnology,
(doi: 10.1109/TNANO.2024.3504963)
(Early Online Publication)
Gandhi, N., Rathore, S., Jaisawal, R. K., Kondekar, P. N., Kumar, N. , Dixit, A. , Georgiev, V. and Bagga, N.
(2024)
Revealing the Noise Dependent Sensitivity of a Junctionless FinFET-Based Hydrogen Sensor with Ferroelectric Gate Stack.
In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2024), San Jose, CA, USA, 24-27 September 2024,
ISBN 9798331516352
(doi: 10.1109/SISPAD62626.2024.10733257)
Kumar, N. , García, C. P., Dixit, A. and Georgiev, V.
(2024)
Understanding the dynamic perturbative behaviour of Electrolyte-Gated FET Based Biosensors with Immobilised Nanoparticles.
In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2024), San Jose, CA, USA, 24-27 September 2024,
ISBN 9798331516352
(doi: 10.1109/SISPAD62626.2024.10733212)
Xue, L., Dixit, A. , Kumar, N. , Georgiev, V. and Liu, B.
(2024)
Machine Learning-Assisted Device Circuit Co-optimization: A Case Study on Inverter.
IEEE Transactions on Electron Devices,
(Accepted for Publication)
Dutta, T. , Adamu-Lema, F., Xeni, N., Rezaei, A. , Dixit, A. , Topaloglu, I. , Georgiev, V. and Asenov, A.
(2024)
Predictive Simulation of Nanosheet Transistors including the Impact of Access Resistance.
In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2024), San Jose, CA, USA, 25-27 Sept 2024,
(Accepted for Publication)
Dixit, A. , Rezaei, A. , Xeni, N., Kumar, N. , Dutta, T. , Topaloglu, I. , Aleksandrov, P. , Asenov, A. and Georgiev, V.
(2024)
Unravelling the Impact of Random Dopant Fluctuations on Si-Based 3nm NSFET: A NEGF Analysis.
In: IEEE 24th International Conference on Nanotechnology (NANO), Gijon, Spain, 08-11 Jul 2024,
pp. 5-8.
ISBN 9798350386240
(doi: 10.1109/NANO61778.2024.10628880)
Jacobs, J., Vila-Nadal, L. and Georgiev, V.
(2024)
Atomistic modeling of [W18O54(SeO3)2]4- polyoxometalates (POM) molecules in the presence of counter-cations.
In: IEEE 24th International Conference on Nanotechnology (NANO), Gijon, Spain, 08-11 Jul 2024,
pp. 141-145.
ISBN 9798350386240
(doi: 10.1109/NANO61778.2024.10628858)
Martinez-Oliver, C., Scherrer, M., Iadanza, S., Schmid, H., Moselund, K. and Georgiev, V.
(2024)
Simulation and fabrication of monolithic III-V photodetectors on Si: the role of growth facets and localization of heterojunctions.
IEEE Transactions on Electron Devices,
(doi: 10.1109/TED.2024.3437333)
(Early Online Publication)
Kumar, N. , Aleksandrov, P. , Gao, Y., Macdonald, C. , García, C. P. and Georgiev, V.
(2024)
Combinations of analytical and machine learning methods in a single simulation framework for amphoteric molecules detection.
IEEE Sensors Letters, 8(7),
1501004.
(doi: 10.1109/LSENS.2024.3408101)
Kumar, P., Kumar, N. , Dixit, A. , Bagga, N., Dasgupta, S. and Georgiev, V.
(2024)
Steep-subthreshold bilayer tunnel field effect transistor based efficient pH sensing: performance characterisation and optimization.
IEEE Sensors Letters,
(doi: 10.1109/LSENS.2024.3419581)
(Early Online Publication)
Gandhi, N., Rathore, S., Jaisawal, R. K., Kondekar, P. N., Kumar, N. , Dixit, A. , Georgiev, V. and Bagga, N.
(2024)
Sensitivity and Reliability Assessment of a Strained Silicon Junctionless FinFET-based Hydrogen Gas Sensor.
In: 2024 IEEE Latin American Electron Devices Conference (LAEDC), Guatemala City, Guatemala, 08-10 May 2024,
ISBN 9798350361292
(doi: 10.1109/laedc61552.2024.10555835)
Kumar, N. , Dhar, R. P., El Maiss, J., Georgiev, V. and García, C. P.
(2024)
Discovery of amphoteric fingerprints of amino acids with field-effect transistors.
IEEE Access,
(doi: 10.1109/ACCESS.2024.3411168)
(Early Online Publication)
Kumar, P., Kumar, N. , Dixit, A. , Bagga, N., Dasgupta, S. and Georgiev, V.
(2024)
Low-voltage feedback field effect transistor based ion-sensing: a novel and detailed investigation for energy-efficient pH sensor.
IEEE Sensors Letters, 8(6),
2000604.
(doi: 10.1109/LSENS.2024.3403052)
Shashank, M., Liu, F., Shakthivel, D., Rai, B. and Georgiev, V.
(2024)
Molecular dynamics simulation based study to analyse the properties of entrapped water between gold and graphene 2D interface.
Nanoscale Advances, 6(9),
pp. 2371-2379.
(doi: 10.1039/D3NA00878A)
(PMID:38694470)
(PMCID:PMC11059550)
Shukla, R. P. et al.
(2024)
Rational design of a planar junctionless field-effect transistor for sensing biomolecular interactions.
Proceedings, 97(1),
121.
(doi: 10.3390/proceedings2024097121)
Brugnolotto, E., Aleksandrov, P. , Sousa, M. and Georgiev, V.
(2024)
Machine learning inspired nanowire classification method based on nanowire array scanning electron microscope images.
Open Research Europe, 4,
43.
(doi: 10.12688/openreseurope.16696.1)
Mishra, S. , Nair, N. M. , Khandelwal, G. , Rai, B. and Georgiev, V.
(2024)
Capacitive-triboelectric based hybrid sensor system for human-like tactile perception.
IEEE Sensors Letters, 8(2),
5500404.
(doi: 10.1109/LSENS.2024.3351692)
2023
Kumar, N. , Dixit, A. , Rezaei, A. , Dutta, T. , Pascual García, C. and Georgiev, V.
(2023)
Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for Memory and Sensing Applications.
In: 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), Paestum, Italy, 22-25 October 2023,
pp. 617-620.
ISBN 9798350335460
(doi: 10.1109/nmdc57951.2023.10343913)
Kumar, N. , Pascual García, C., Dixit, A. , Rezaei, A. and Georgiev, V.
(2023)
Charge dynamics of amino acids fingerprints and the effect of density on FinFET-based electrolyte-gated sensor.
Solid-State Electronics, 210,
108789.
(doi: 10.1016/j.sse.2023.108789)
Gandhi, N., Jaisawal, R. K., Rathore, S., Kondekar, P. N., Dixit, A. , Kumar, N. , Georgiev, V. and Bagga, N.
(2023)
Gate Oxide Induced Reliability Assessment of Junctionless FinFET-Based Hydrogen Gas Sensor.
In: 2023 IEEE SENSORS, Vienna, Austria, 29 Oct - 01 Nov 2023,
ISBN 9798350303872
(doi: 10.1109/SENSORS56945.2023.10324885)
Mishra, S. , John, D. A., Kumar, N. , Rai, B. and Georgiev, V.
(2023)
Human-Inspired Stretch and Joint-Bend Sensing System Based on Flexible Sensors.
In: IEEE Sensors 2023, Vienna, Austria, 29 Oct - 01 Nov 2023,
ISBN 9798350303872
(doi: 10.1109/SENSORS56945.2023.10325250)
Aleksandrov, P. , Rezaei, A. , Xeni, N., Dutta, T. , Asenov, A. and Georgiev, V.
(2023)
Fully Convolutional Generative Machine Learning Method for Accelerating Non-Equilibrium Green’s Function Simulations.
In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 27-29 September 2023,
pp. 169-172.
ISBN 9784863488038
(doi: 10.23919/SISPAD57422.2023.10319587)
Kumar, N. , García, C. P., Rezaei, A. , Dixit, A. , Asenov, A. and Georgiev, V.
(2023)
Electrolyte-Gated FET-based Sensing of Immobilized Amphoteric Molecules Including the Variability in Affinity of the Reactive Sites.
In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 27-29 September 2023,
pp. 377-380.
ISBN 9784863488038
(doi: 10.23919/SISPAD57422.2023.10319578)
Li, W., Wolff, N., Samuel, A. K., Wang, Y., Georgiev, V. P. , Kienle, L. and Ganin, A.
(2023)
Unlocking high-performance supercapacitor behavior and sustained chemical stability of 2D metallic CrSe2 by optimal electrolyte selection.
ChemElectroChem, 10(21),
e202300428.
(doi: 10.1002/celc.202300428)
Brugnolotto, E., Schmid, H., Georgiev, V. and Sousa, M.
(2023)
In-plane III-V nanowires on Si (1 1 0) with quantum wells by selective epitaxy in templates.
Crystal Growth and Design, 23(11),
pp. 8034-8042.
(doi: 10.1021/acs.cgd.3c00806)
Kumar, N. , García, C. P., Dixit, A. , Rezaei, A. and Georgiev, V.
(2023)
Novel Detection Methodology of Milk-Oligopeptides Fingerprints using Ion-Sensitive BioFET.
In: 2023 IEEE BioSensors Conference (BioSensors), London, UK, 30 July - 1 August 2023,
ISBN 9798350346046
(doi: 10.1109/BioSensors58001.2023.10281172)
Aleksandrov, P. , Rezaei, A. , Dutta, T. , Xeni, N., Asenov, A. and Georgiev, V.
(2023)
Convolutional machine learning method for accelerating non-equilibrium Green’s function simulations in nanosheet transistor.
IEEE Transactions on Electron Devices, 70(10),
pp. 5448-5453.
(doi: 10.1109/TED.2023.3306319)
Dam Vedel, C., Gunst, T., Smidstrup, S. and Georgiev, V. P.
(2023)
Shockley-Read-Hall recombination and trap levels in In 0.53Ga 0.47As point defects from first principles.
Physical Review B, 108,
094113.
(doi: 10.1103/PhysRevB.108.094113)
Medina Bailon, C., Nedjalkov, M., Georgiev, V. , Selberherr, S. and Asenov, A.
(2023)
Comprehensive mobility study of silicon nanowire transistors using multi-subband models.
Nano Express, 4,
025005.
(doi: 10.1088/2632-959X/acdb8a)
Kumar, N. , Dhar, R. P. S., Pascual Garcia, C. and Georgiev, V.
(2023)
A novel computational framework for simulations of bio-field effect transistors.
ECS Transactions, 111(1),
pp. 249-260.
(doi: 10.1149/11101.0249ecst)
Brugnolotto, E., Scherrer, M., Schmid, H., Georgiev, V. and Sousa, M.
(2023)
Growth of type I superlattice III-V heterostructure in horizontal nanowires enclosed in a silicon oxide template.
Journal of Crystal Growth, 603,
127015.
(doi: 10.1016/j.jcrysgro.2022.127015)
Dhar, R., Kumar, N. , Garcia, C. P. and Georgiev, V.
(2023)
Deriving a novel methodology for nano-BioFETs and analysing the effect of high-k oxides on the amino-acids sensing application.
Solid-State Electronics, 200,
108525.
(doi: 10.1016/j.sse.2022.108525)
Nagy, D. , Rezaei, A. , Xeni, N., Dutta, T. , Adamu-Lema, F., Topaloglu, I. , Georgiev, V. P. and Asenov, A.
(2023)
Hierarchical simulation of nanosheet field effect transistor: NESS flow.
Solid-State Electronics, 199,
108489.
(doi: 10.1016/j.sse.2022.108489)
2022
Dam Vedel, C., Smidstrup, S. and Georgiev, V. P.
(2022)
First-principles investigation of polytypic defects in InP.
Scientific Reports, 12,
19724.
(doi: 10.1038/s41598-022-24239-w)
(PMID:36385159)
(PMCID:PMC9669039)
Guan, Y., Georgiev, V. P. , Asenov, A. , Liang, F. and Chen, H.
(2022)
Impact of the Figures of Merit (FoMs) definitions on the variability in nanowire TFET: NEGF simulation study.
IEEE Transactions on Electron Devices, 69(11),
pp. 6394-6399.
(doi: 10.1109/TED.2022.3204596)
Lapham, P. and Georgiev, V.
(2022)
Theoretically probing the relationship between barrier length and resistance in Al/AlOx/Al tunnel junctions.
Solid-State Electronics, 197,
108442.
(doi: 10.1016/j.sse.2022.108442)
Dhar, R., Kumar, N. , Pascual Garcia, C. and Georgiev, V.
(2022)
Assessing the effect of scaling high-aspect-ratio ISFET with physical model interface for nano-biosensing application.
Solid-State Electronics, 195,
108374.
(doi: 10.1016/j.sse.2022.108374)
Gauhar, G. A., Chenchety, A., Yenugula, H., Georgiev, V. , Asenov, A. and Badami, O.
(2022)
Study of gate current in advanced MOS architectures.
Solid-State Electronics, 194,
108345.
(doi: 10.1016/j.sse.2022.108345)
Rezaei, A. , Maciazek, P., Sengupta, A. , Dutta, T. , Medina-Bailon, C., Asenov, A. and Georgiev, V. P.
(2022)
Statistical device simulations of III-V nanowire resonant tunneling diodes as physical unclonable functions source.
Solid-State Electronics, 194,
108339.
(doi: 10.1016/j.sse.2022.108339)
Shukla, R. P., Bomer, J. G., Wijnperle, D., Kumar, N. , Georgiev, V. P. , Singh, A. C., Krishnamoorthy, S., García, C. P., Pud, S. and Olthuis, W.
(2022)
Planar junctionless field-effect transistor for detecting biomolecular interactions.
Sensors, 22(15),
5783.
(doi: 10.3390/s22155783)
Tok, K. H., Mehedi, M., Zhang, J. F., Brown, J., Ye, Z., Ji, Z., Zhang, W., Marsland, J. S., Asenov, A. and Georgiev, V.
(2022)
An integral methodology for predicting long-term RTN.
IEEE Transactions on Electron Devices, 69(7),
pp. 3869-3875.
(doi: 10.1109/TED.2022.3176585)
Kumar, N. , Dhar, R. P. S., García, C. P. and Georgiev, V.
(2022)
Discovery of Amino Acid fingerprints transducing their amphoteric signatures by field-effect transistors.
ChemRxiv,
(doi: 10.26434/chemrxiv-2022-bm062-v2)
Lapham, P. and Georgiev, V.
(2022)
Computational study of oxide stoichiometry and variability in the Al/AlOx/Al tunnel junction.
Nanotechnology, 33(26),
265201.
(doi: 10.1088/1361-6528/ac5f2e)
(PMID:35303731)
Chen, R. et al.
(2022)
Carbon nanotube SRAM in 5-nm technology node design, optimization, and performance evaluation--part I: CNFET transistor optimization.
IEEE Transactions on Very Large Scale Integration Systems, 30(4),
pp. 432-439.
(doi: 10.1109/TVLSI.2022.3146125)
Chen, R. et al.
(2022)
Carbon nanotube SRAM in 5-nm technology node design, optimization, and performance evaluation--part II: CNT interconnect optimization.
IEEE Transactions on Very Large Scale Integration Systems, 30(4),
pp. 440-448.
(doi: 10.1109/TVLSI.2022.3146064)
Dutta, T. , Medina Bailon, C., Xeni, N., Georgiev, V. and Asenov, A.
(2022)
Density Gradient Based Quantum-Corrected 3D Drift-Diffusion Simulator for Nanoscale MOSFETs.
In: 2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC), Vancouver, Canada, 12-15 Dec 2021,
ISBN 9781665418928
(doi: 10.1109/NMDC50713.2021.9677480)
2021
Dhar, R. P. S., Kumar, N. , Medina-Bailon, C., Garcia, C. P. and Georgiev, V. P.
(2021)
TCAD Simulations of High-Aspect-Ratio Nano-biosensor for Label-Free Sensing Application.
In: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Caen, France, 1-3 Sep 2021,
ISBN 9781665437455
(doi: 10.1109/EuroSOI-ULIS53016.2021.9560701)
Vedel, C. D., Brugnolotto, E., Smidstrup, S. and Georgiev, V. P.
(2021)
Impact of Different Types of Planar Defects on Current Transport in Indium Phosphide (InP).
In: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Caen, France, 1-3 Sep 2021,
ISBN 9781665437455
(doi: 10.1109/EuroSOI-ULIS53016.2021.9560698)
Dutta, T. , Georgiev, V. and Asenov, A.
(2021)
Stability and Vmin analysis of ferroelectric negative capacitance FinFET based SRAM in the presence of variability.
Solid-State Electronics, 184,
108100.
(doi: 10.1016/j.sse.2021.108100)
Martinez-Oliver, C., Moselund, K. E. and Georgiev, V. P.
(2021)
Evaluation of Material Profiles for III-V Nanowire Photodetectors.
In: 2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 13-17 Sep 2021,
pp. 39-40.
ISBN 9781665412766
(doi: 10.1109/NUSOD52207.2021.9541533)
Medina-Bailon, C., Kumar, N. , Dhar, R. P. S., Todorova, I., Lenoble, D., Georgiev, V. P. and Pascual García, C.
(2021)
Comprehensive analytical modelling of an absolute pH sensor.
Sensors, 21(15),
5190.
(doi: 10.3390/s21155190)
Medina-Bailon, C., Dutta, T. , Rezaei, A. , Nagy, D. , Adamu-Lema, F., Georgiev, V. P. and Asenov, A.
(2021)
Simulation and modeling of novel electronic device architectures with NESS (Nano-Electronic Simulation Software): a modular nano TCAD simulation framework.
Micromachines, 12(6),
680.
(doi: 10.3390/mi12060680)
Medina-Bailon, C., Padilla, J. L., Sampedro, C., Donetti, L., Gergiev, V. P. , Gamiz, F. and Asenov, A.
(2021)
Self-consistent enhanced S/D tunneling implementation in a 2D MS-EMC nanodevice simulator.
Micromachines, 12(6),
601.
(doi: 10.3390/mi12060601)
Guan, Y., Carrillo-Nuñez, H., Georgiev, V. P. , Asenov, A. , Liang, F., Li, Z. and Chen, H.
(2021)
Quantum simulation investigation of work-function variation in nanowire tunnel FETs.
Nanotechnology, 32(15),
150001.
(doi: 10.1088/1361-6528/abd125)
(PMID:33285530)
Lapham, P., Vilà-Nadal, L. , Cronin, L. and Georgiev, V. P.
(2021)
Influence of the contact geometry and counterions on the current flow and charge transfer in polyoxometalate molecular junctions: a density functional theory study.
Journal of Physical Chemistry C, 125(6),
pp. 3599-3610.
(doi: 10.1021/acs.jpcc.0c11038)
(PMID:33633816)
(PMCID:PMC7899180)
Dutta, T. , Medina Bailon, C., Rezaei, A. , Nagy, D. , Adamu-Lema, F., Xeni, N., Abourrig, Y., Kumar, N. , Georgiev, V. and Asenov, A.
(2021)
TCAD Simulation of Novel Semiconductor Devices.
In: International Conference on ASIC (ASICON) 2021, Kunming, China, 26-29 October 2021,
ISBN 9781665438674
(doi: 10.1109/ASICON52560.2021.9620465)
2020
Medina-Bailon, C., Dutta, T. , Adamu-Lema, F., Rezaei, A. , Nagy, D. , Georgiev, V. P. and Asenov, A.
(2020)
Nano-electronic simulation software (NESS): a novel open-source TCAD simulation environment.
Journal of Microelectronic Manufacturing, 3(4),
20030407.
(doi: 10.33079/jomm.20030407)
Georgiev, V.P. , Sengupta, A. , Maciazek, P., Badami, O., Medina-Bailon, C., Dutta, T. , Adamu-Lema, F. and Asenov, A.
(2020)
Simulation of Gated GaAs-AlGaAs Resonant Tunneling Diodes for Tunable Terahertz Communication Applications.
In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020,
pp. 241-244.
ISBN 9784863487635
(doi: 10.23919/SISPAD49475.2020.9241677)
Lapham, P., Badami, O., Medina-Bailon, C., Adamu-Lema, F., Dutta, T. , Nagy, D. , Georgiev, V. and Asenov, A.
(2020)
A Combined First Principles and Kinetic Monte Carlo study of Polyoxometalate based Molecular Memory Devices.
In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020,
pp. 273-276.
ISBN 9784863487635
(doi: 10.23919/SISPAD49475.2020.9241606)
McGhee, J. and Georgiev, V. P.
(2020)
First Principle Simulations of Electronic and Optical Properties of a Hydrogen Terminated Diamond Doped by a Molybdenum Oxide Molecule.
In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020,
pp. 31-34.
ISBN 9784863487635
(doi: 10.23919/SISPAD49475.2020.9241630)
Medina Bailon, C., Badami, O., Carrillo-Nunez, H., Dutta, T. , Nagy, D. , Adamu-Lema, F., Georgiev, V. P. and Asenov, A.
(2020)
Enhanced Capabilities of the Nano-Electronic Simulation Software (NESS).
In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020,
pp. 293-296.
ISBN 9781728173542
(doi: 10.23919/SISPAD49475.2020.9241594)
McGhee, J. and Georgiev, V. P.
(2020)
Electronic and Optical Properties of Hydrogen-Terminated Diamond Doped by Molybdenum Oxide: A Density Functional Theory Study.
In: 2020 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Turin, Italy, 14-18 Sep 2020,
ISBN 9781728160863
(doi: 10.1109/NUSOD49422.2020.9217662)
Xeni, N., Ghannam, R. , Georgiev, V. , Adamu-Lema, F., Badami, O. and Asenov, A.
(2020)
The Use of TCAD Simulations in Semiconductor Devices Teaching.
Transnational Engineering Education Using Technology Workshop (TREET 2020), Glasgow, UK, 31 Jul 2020.
ISBN 9781728188515
(doi: 10.1109/TREET50959.2020.9189752)
Berrada, S., Carrillo-Nunez, H., Lee, J., Medina Bailon, C., Dutta, T. , Badami, O., Adamu-Lema, F., Thirunavukkarasu, V., Georgiev, V. and Asenov, A.
(2020)
Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform.
Journal of Computational Electronics, 19,
pp. 1031-1046.
(doi: 10.1007/s10825-020-01519-0)
Dutta, T. , Georgiev, V. and Asenov, A.
(2020)
Vmin Prediction for Negative Capacitance MOSFET based SRAM.
In: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 01-30 Sep 2020,
ISBN 9781728187655
(doi: 10.1109/EUROSOI-ULIS49407.2020.9365282)
Badami, O., Sadi, T., Adamu-Lema, F., Lapham, P., Mu, D., Nagy, D. , Georgiev, V. , Ding, J. and Asenov, A.
(2020)
A Kinetic Monte Carlo study of retention time in a POM molecule-based flash memory.
IEEE Transactions on Nanotechnology, 19,
pp. 704-710.
(doi: 10.1109/TNANO.2020.3016182)
Carrillo-Nuñez, H., Medina-Bailón, C., Georgiev, V. P. and Asenov, A.
(2020)
Full-band quantum transport simulation in presence of hole-phonon interactions using a mode-space k·p approach.
Nanotechnology, 32(2),
020001.
(doi: 10.1088/1361-6528/abacf3)
(PMID:32759487)
Adamu-Lema, F., Monzio Compagnoni, C., Badami, O., Georgiev, V. and Asenov, A.
(2020)
RTN and its intrinsic interaction with statistical variability sources in advanced nano-scale devices: a simulation study.
In: Grasser, T. (ed.)
Noise in Nanoscale Semiconductor Devices.
Springer: Cham, pp. 441-466.
ISBN 9783030374990
(doi: 10.1007/978-3-030-37500-3_13)
McGhee, J. and Georgiev, V. P.
(2020)
Simulation study of surface transfer doping of hydrogenated diamond by MoO₃ and V₂O₅ metal oxides.
Micromachines, 11(4),
433.
(doi: 10.3390/mi11040433)
Medina-Bailon, C., Carrillo-Nunez, H., Lee, J., Sampedro, C., Padilla, J. L., Donetti, L., Georgiev, V. , Gamiz, F. and Asenov, A.
(2020)
Quantum enhancement of a S/D tunneling model in a 2D MS-EMC nanodevice simulator: NEGF comparison and impact of effective mass variation.
Micromachines, 11(2),
204.
(doi: 10.3390/mi11020204)
2019
Xeni, N., Ghannam, R. , Udama, F., Georgiev, V. and Asenov, A.
(2019)
Semiconductor Device Visualization using TCAD Software: Case Study for Biomedical Applications.
IEEE UKCAS 2019, London, UK, 06 Dec 2019.
(Accepted for Publication)
Sadi, T., Badami, O., Georgiev, V. , Ding, J. and Asenov, A.
(2019)
Physical Insights into the Transport Properties of RRAMs Based on Transition Metal Oxides.
In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. 2019,
ISBN 9781728109404
(doi: 10.1109/SISPAD.2019.8870391)
Thirunavukkarasu, V. et al.
(2019)
Efficient Coupled-mode space based Non-Equilibrium Green’s Function Approach for Modeling Quantum Transport and Variability in Vertically Stacked SiNW FETs.
In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. 2019,
ISBN 9781728109404
(doi: 10.1109/SISPAD.2019.8870400)
Medina-Bailon, C., Dutta, T. , Klüpfel, S., Georgiev, V. and Asenov, A.
(2019)
Scaling-aware TCAD Parameter Extraction Methodology for Mobility Prediction in Tri-gate Nanowire Transistors.
In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. 2019,
ISBN 9781728109404
(doi: 10.1109/SISPAD.2019.8870556)
Medina-Bailon, C., Sadi, T., Nedjalkov, M., Carrillo-Nuñez, H., Lee, J., Badami, O., Georgiev, V. , Selberherr, S. and Asenov, A.
(2019)
Mobility of circular and elliptical si nanowire transistors using a multi-subband 1d formalism.
IEEE Electron Device Letters, 40(10),
pp. 1571-1574.
(doi: 10.1109/LED.2019.2934349)
Carrillo-Nunez, H., Dimitrova, N., Asenov, A. and Georgiev, V.
(2019)
Machine learning approach for predicting the effect of statistical variability in Si junctionless nanowire transistors.
IEEE Electron Device Letters, 40(9),
pp. 1366-1369.
(doi: 10.1109/LED.2019.2931839)
Guan, Y., Li, Z., Carrillo-Nunez, H., Zhang, Y., Georgiev, V. P. , Asenov, A. and Liang, F.
(2019)
An accurate analytical model for tunnel FET output characteristics.
IEEE Electron Device Letters, 40(6),
pp. 1001-1004.
(doi: 10.1109/LED.2019.2914014)
Badami, O., Medina-Bailon, C., Berrada, S., Carrillo-Nunez, H., Lee, J., Georgiev, V. and Asenov, A.
(2019)
Comprehensive study of cross-section dependent effective masses for silicon based gate-all-around transistors.
Applied Sciences, 9(9),
1895.
(doi: 10.3390/app9091895)
Liang, J. et al.
(2019)
Investigation of Pt-salt-doped-standalone-multiwall carbon nanotubes for on-chip interconnect applications.
IEEE Transactions on Electron Devices, 66(5),
pp. 2346-2352.
(doi: 10.1109/TED.2019.2901658)
Medina Bailon, C., Padilla, J. L., Sadi, T., Sampedro, C., Godoy, A., Donetti, L., Georgiev, V. P. , Gamiz, F. and Asenov, A.
(2019)
Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices.
IEEE Transactions on Electron Devices, 66(3),
pp. 1145-1152.
(doi: 10.1109/TED.2019.2890985)
Sadi, T., Medina Bailon, C., Nedjalkov, M., Lee, J., Badami, O., Berrada, S., Carrillo-Nunez, H., Georgiev, V. , Selberherr, S. and Asenov, A.
(2019)
Simulation of the impact of ionized impurity scattering on the total mobility in Si nanowire transistors.
Materials, 12(1),
124.
(doi: 10.3390/ma12010124)
Duan, M. , Navarro, C., Cheng, B., Adamu-Lema, F., Wang, X., Georgiev, V.P. , Gamiz, F., Millar, C. and Asenov, A.
(2019)
Thorough understanding of retention time of Z2FET memory operation.
IEEE Transactions on Electron Devices, 66(1),
pp. 383-388.
(doi: 10.1109/TED.2018.2877977)
Carrillo-Nunez, H., Wang, C., Asenov, A. , Young, R. and Georgiev, V.
(2019)
Simulation of Si Nanowire Quantum-Dot Devices for Authentication.
In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, France, 01-03 Apr 2019,
ISBN 9781728116587
(doi: 10.1109/EUROSOI-ULIS45800.2019.9041864)
Dutta, T. , Medina-Bailon, C., Carrillo-Nunez, H., Badami, O., Georgiev, V. and Asenov, A.
(2019)
Schrödinger Equation Based Quantum Corrections in Drift-Diffusion: A Multiscale Approach.
In: 2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), Stockholm, Sweden, 27-30 Oct 2019,
ISBN 9781728126371
(doi: 10.1109/NMDC47361.2019.9084010)
Lee, J., Lamarche, M. and Georgiev, V. P.
(2019)
The First-Priniple Simulation Study on the Specific Grain Boundary Resistivity in Copper Interconnects.
In: 2018 IEEE 13th Nanotechnology Materials & Devices Conference (NMDC 2018), Portland, OR, USA, 14-17 Oct 2018,
ISBN 9781538610169
(doi: 10.1109/NMDC.2018.8605907)
Lee, J., Medina-Bailon, C., Berrada, S., Carrillo-Nunez, H., Sadi, T., Georgiev, V. P. , Nedjalkov, M. and Asenov, A.
(2019)
A Multi-Scale Simulation Study of the Strained Si Nanowire FETs.
In: 2018 IEEE 13th Nanotechnology Materials & Devices Conference (NMDC 2018), Portland, OR, USA, 14-17 Oct 2018,
ISBN 9781538610169
(doi: 10.1109/NMDC.2018.8605884)
Mathew, P. T., Fang, F., Vila-Nadal, L. , Cronin, L. and Georgiev, V.
(2019)
First Principle Simulations of Current Flow in Inorganic Molecules: Polyoxometalates (POMs).
In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, France, 01-03 Apr 2019,
ISBN 9781728116587
(doi: 10.1109/EUROSOI-ULIS45800.2019.9041869)
McGhee, J., Moran, D. A. and Georgiev, V. P.
(2019)
Simulations of Surface Transfer Doping of Hydrogenated Diamond by MoO3 Metal Oxide.
In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, France, 01-03 Apr 2019,
ISBN 9781728116587
(doi: 10.1109/EUROSOI-ULIS45800.2019.9041887)
Medina Bailon, C., Sadi, T., Sampedro, C., Padilla, J. L., Donetti, L., Georgiev, V. , Gamiz, F. and Asenov, A.
(2019)
Impact of the trap attributes on the gate leakage mechanisms in a 2D MS-EMC nanodevice simulator.
In: Nikolov, G., Kolkovska, N. and Georgiev, K. (eds.)
Numerical Methods and Applications.
Series: Lecture Notes in Computer Science, 11189 (11189).
Springer, pp. 273-280.
ISBN 9783030106911
(doi: 10.1007/978-3-030-10692-8_30)
Sadi, T., Badami, O., Georgiev, V. and Asenov, A.
(2019)
Kinetic Monte Carlo Analysis of the Operation and Reliability of Oxide Based RRAMs.
In: 12th International Conference on Large-Scale Scientific Computing, LSSC 2019, Sozopol, Bulgaria, 10-14 June 2019,
pp. 429-437.
(doi: 10.1007/978-3-030-41032-2_49)
2018
Lee, J., Badami, O., Carrillo-Nunez, H., Berrada, S., Medina-Bailon, C., Dutta, T. , Adamu-Lema, F., Georgiev, V. P. and Asenov, A.
(2018)
Variability predictions for the next technology generations of n-type
SixGe1-x nanowire MOSFETs.
Micromachines, 9(12),
643.
(doi: 10.3390/mi9120643)
Berrada, S., Dutta, T. , Carrillo-Nunez, H., Duan, M. , Adamu-Lema, F., Lee, J., Georgiev, V. , Medina Bailon, C. and Asenov, A.
(2018)
NESS: new flexible Nano-Electronic Simulation Software.
In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018,
pp. 22-25.
ISBN 9781538667910
(doi: 10.1109/SISPAD.2018.8551701)
Berrada, S., Lee, J., Carrillo-Nunez, H., Medina Bailon, C., Adamu-Lema, F., Georgiev, V. and Asenov, A.
(2018)
Quantum Transport Investigation of Threshold Voltage Variability in Sub-10 nm JunctionlessSi Nanowire FETs.
In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018,
pp. 244-247.
ISBN 9781538667910
(doi: 10.1109/SISPAD.2018.8551638)
Duan, M. , Cheng, B., Adamu-Lema, F., Asenov, P., Dutta, T. , Wang, X., Georgiev, V. P. , Millar, C., Pfaeffli, P. and Asenov, A.
(2018)
Statistical Variability Simulation of Novel Capacitor-less Z2FET DRAM: From Transistor Circuit.
In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA, 24-26 Sept. 2018,
pp. 258-261.
ISBN 9781538667903
(doi: 10.1109/SISPAD.2018.8551710)
Dutta, T. , Georgiev, V. and Asenov, A.
(2018)
Interplay of RDF and Gate LER Induced Statistical Variability in Negative Capacitance FETs.
In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA, 24-26 Sept. 2018,
pp. 262-265.
ISBN 9781538667903
(doi: 10.1109/SISPAD.2018.8551710)
Medina Bailon, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carrillo-Nunez, H., Georgiev, V. P. , Selberherr, S. and Asenov, A.
(2018)
Impact of the Effective Mass on the Mobility in Si Nanowire Transistors.
In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018,
pp. 297-300.
ISBN 9781538667910
(doi: 10.1109/SISPAD.2018.8551630)
Medina Bailon, C., Sampedro, C., Padilla, J. L., Godoy, A., Donetti, L., Georgiev, V. P. , Gamiz, F. and Asenov, A.
(2018)
Impact of Strain on S/D tunneling in FinFETs: a MS-EMC study.
In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018,
pp. 301-304.
ISBN 9781538667910
(doi: 10.1109/SISPAD.2018.8551707)
Chen, R. et al.
(2018)
Variability study of MWCNT local interconnects considering defects and contact resistances - Part I: pristine MWCNT.
IEEE Transactions on Electron Devices, 65(11),
pp. 4955-4962.
(doi: 10.1109/TED.2018.2868421)
Chen, R. et al.
(2018)
Variability study of MWCNT local interconnects considering defects and contact resistances - Part II: impact of charge transfer doping.
IEEE Transactions on Electron Devices, 65(11),
pp. 4963-4970.
(doi: 10.1109/TED.2018.2868424)
Liang, J., Lee, J., Berrada, S., Georgiev, V. , Pandey, R. R., Chen, R., Asenov, A. and Todri-Sanial, A.
(2018)
Atomistic to circuit-level modeling of doped SWCNT for on-chip interconnects.
IEEE Transactions on Nanotechnology, 17(6),
pp. 1084-1088.
(doi: 10.1109/TNANO.2018.2802320)
Carrillo-Nunez, H., Lee, J., Berrada, S., Medina-Bailon, C., Adamu-Lema, F., Luisier, M., Asenov, A. and Georgiev, V. P.
(2018)
Random dopant-induced variability in Si-InAs nanowire tunnel FETs: a quantum transport simulation study.
IEEE Electron Device Letters, 39(9),
pp. 1473-1476.
(doi: 10.1109/LED.2018.2859586)
Lee, J. et al.
(2018)
Understanding electromigration in Cu-CNT composite interconnects: a multiscale electrothermal simulation study.
IEEE Transactions on Electron Devices, 65(9),
pp. 3884-3892.
(doi: 10.1109/TED.2018.2853550)
Georgiev, V. P.
(2018)
Development of Hierarchical Simulation Framework for Design and Optimization of Molecular Based Flash Cell.
In: 2018 76th Device Research Conference (DRC), Santa Barbara, CA, USA, 24-27 Jun 2018,
ISBN 9781538630280
(doi: 10.1109/DRC.2018.8442234)
Uhlig, B. et al.
(2018)
Challenges and Progress on Carbon Nanotube Integration for BEOL Interconnects.
In: 2018 IEEE International Interconnect Technology Conference (IITC), Santa Clara, CA, USA, 4-7 Jun 2018,
pp. 16-18.
ISBN 9781538643372
(doi: 10.1109/IITC.2018.8430411)
Dutta, T. , Georgiev, V. and Asenov, A.
(2018)
Random Discrete Dopant Induced Variability in Negative Capacitance Transistors.
In: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain, 19-21 Mar 2018,
ISBN 9781538648117
(doi: 10.1109/ULIS.2018.8354732)
Medina Bailon, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carrillo-Nunez, H., Georgiev, V. , Selberherr, S. and Asenov, A.
(2018)
Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors.
In: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain, 19-21 Mar 2018,
ISBN 9781538648117
(doi: 10.1109/ULIS.2018.8354723)
Carrillo-Nuñez, H., Mirza, M. M. , Paul, D. J. , MacLaren, D. A. , Asenov, A. and Georgiev, V. P.
(2018)
Impact of randomly distributed dopants on Ω-gate junctionless silicon nanowire transistors.
IEEE Transactions on Electron Devices, 65(5),
pp. 1692-1698.
(doi: 10.1109/TED.2018.2817919)
Georgiev, V. P. , Dochioiu, A.-I., Adamu-Lema, F., Berrada, S., Mirza, M. M. , Paul, D. and Asenov, A.
(2018)
Variability Study of High Current Junctionless Silicon Nanowire Transistors.
In: 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017,
ISBN 9781538627723
(doi: 10.1109/NMDC.2017.8350514)
Georgiev, V. P. , Vila-Nadal, L. , Cronin, L. and Asenov, A.
(2018)
Molecular Based Flash Cell for Low Power Flash Application: Optimization and Variability Evaluation.
In: IEEE 12th Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017,
pp. 64-65.
ISBN 9781538627723
(doi: 10.1109/NMDC.2017.8350505)
Uhlig, B. et al.
(2018)
Progress on Carbon Nanotube BEOL Interconnects.
In: 2018 Design, Automation & Test in Europe Conference & Exhibition (DATE), Dresden, Germany, 19-23 Mar 2018,
pp. 937-942.
ISBN 9783981926309
(doi: 10.23919/DATE.2018.8342144)
Liang, J., Lee, J., Berrada, S., Georgiev, V. , Asenov, A. , Azemard-Crestani, A. and Todri-Sanial, A.
(2018)
Atomistic to Circuit Level Modeling of Defective Doped SWCNTs with Contacts for On-Chip Interconnect Application.
In: 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017,
pp. 66-67.
ISBN 9781538627723
(doi: 10.1109/NMDC.2017.8350506)
2017
Thirunavukkarasu, V. et al.
(2017)
Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs.
Superlattices and Microstructures, 111,
pp. 649-655.
(doi: 10.1016/j.spmi.2017.07.020)
Adamu-Lema, F., Duan, M. , Navarro, C., Georgiev, V. , Cheng, B., Wang, X., Millar, C., Gamiz, F. and Asenov, A.
(2017)
Simulation Based DC and Dynamic Behaviour Characterization of Z2FET.
In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017,
pp. 317-320.
(doi: 10.23919/SISPAD.2017.8085328)
Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A.
(2017)
Does a Nanowire Transistor Follow the Golden Ratio? A 2D Poisson-Schrödinger/3D Monte Carlo Simulation Study.
In: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan, 7-9 Sept 2017,
(doi: 10.23919/SISPAD.2017.8085263)
Duan, M. , Adamu-Lema, F., Cheng, B., Navarro, C., Wang, X., Georgiev, V.P. , Gamiz, F., Millar, C. and Asenov, A.
(2017)
2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application.
In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017,
pp. 325-328.
(doi: 10.23919/SISPAD.2017.8085330)
Lee, J. et al.
(2017)
The Impact of Vacancy Defects on CNT Interconnects: From Statistical Atomistic Study to Circuit Simulations.
In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017,
pp. 157-160.
(doi: 10.23919/SISPAD.2017.8085288)
Lee, J. et al.
(2017)
Atoms-to-Circuits Simulation Investigation of CNT Interconnects for Next Generation CMOS Technology.
In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017,
pp. 153-156.
(doi: 10.23919/SISPAD.2017.8085287)
Wang, X., Georgiev, V. P. , Adamu-Lema, F., Gerrer, L., Amoroso, S. M. and Asenov, A.
(2017)
TCAD-based design technology co-optimization for variability in nanoscale SOI FinFETs.
In: Deleonibus, S. (ed.)
Integrated Nanodevice and Nanosystem Fabrication.
Series: Pan Stanford series on intelligent nanosystems.
Pan Stanford: Singapore, pp. 215-252.
ISBN 9789814774222
Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A.
(2017)
Simulation study of vertically stacked lateral Si nanowires transistors for 5 nm CMOS applications.
IEEE Journal of the Electron Devices Society, 5(6),
pp. 466-472.
(doi: 10.1109/JEDS.2017.2752465)
Georgiev, V. P. , Mirza, M. M. , Dochioiu, A.-I., Lema, F.-A., Amoroso, S. M., Towie, E., Riddet, C., MacLaren, D. A. , Asenov, A. and Paul, D. J.
(2017)
Experimental and simulation study of 1D silicon nanowire transistors using heavily doped channels.
IEEE Transactions on Nanotechnology, 16(5),
pp. 727-735.
(doi: 10.1109/TNANO.2017.2665691)
Berrada, S., Lee, J., Georgiev, V. and Asenov, A.
(2017)
Effect of the Quantum Mechanical Tunneling on the Leakage Current in Ultra-scaled Si Nanowire Transistors.
12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017.
Medina-Bailon, C., Sadi, T., Sampedro, C., Padilla, J.L., Godoy, A., Donetti, L., Georgiev, V. , Gamiz, F. and Asenov, A.
(2017)
Assessment of Gate Leakage Mechanism Utilizing Multi-Subband Ensemble Monte Carlo.
In: 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Athens, Greece, 03-05 Apr 2017,
pp. 144-147.
ISBN 9781509053148
(doi: 10.1109/ULIS.2017.7962585)
Al-Ameri, T. , Georgiev, V. P. , Sadi, T., Wang, Y., Adamu-Lema, F., Wang, X., Amoroso, S. M., Towie, E., Brown, A. and Asenov, A.
(2017)
Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit.
Solid-State Electronics, 129,
pp. 73-80.
(doi: 10.1016/j.sse.2016.12.015)
Lee, J., Sadi, T., Georgiev, V. P. , Todri-Sanial, A. and Asenov, A.
(2017)
A Hierarchical Model for CNT and Cu-CNT Composite Interconnects: From Density Functional Theory to Circuit-Level Simulations.
International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017.
(Unpublished)
Adamu-Lema, F., Duan, M. , Berrada, S., Lee, J., Al-Ameri, T. , Georgiev, V. and Asenov, A.
(2017)
Modelling and simulation of advanced semiconductor devices.
ECS Transactions, 80(4),
pp. 33-42.
(doi: 10.1149/08004.0033ecst)
Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A.
(2017)
Position-Dependent Performance in 5 nm Vertically Stacked Lateral Si Nanowires Transistors.
International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017.
Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A.
(2017)
Variability-Aware Simulations of 5 nm Vertically Stacked Lateral Si Nanowires Transistors.
International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017.
Liang, J. et al.
(2017)
A Physics-based Investigation of Pt-salt Doped Carbon Nanotubes for Local Interconnects.
In: 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 02-06 Dec 2017,
35.5.1-35.5.4.
ISBN 9781538635599
(doi: 10.1109/IEDM.2017.8268502)
Medina-Bailon, C., Sampedro, C., Padilla, J.L., Godoy, A., Donetti, L., Gamiz, F., Sadi, T., Georgiev, V. and Asenov, A.
(2017)
Multi-subband Ensemble Monte Carlo Study of Tunneling Leakage mechanisms.
In: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan, 7-9 Sept 2017,
pp. 281-284.
ISBN 9784863486102
(doi: 10.23919/SISPAD.2017.8085319)
Todri-Sanial, A. et al.
(2017)
A survey of carbon nanotube interconnects for energy efficient integrated circuits.
IEEE Circuits and Systems Magazine, 17(2),
pp. 47-62.
(doi: 10.1109/MCAS.2017.2689538)
2016
Al-Ameri, T. , Georgiev, V.P. , Lema, A., Sadi, T., Towie, E., Riddet, C., Alexander, C. and Asenov, A.
(2016)
Performance of Vertically Stacked Horizontal Si Nanowires Transistors: A 3D Monte Carlo / 2D Poisson Schrodinger Simulation Study.
In: 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Toulouse, France, 9-12 Oct 2016,
ISBN 9781509043521
(doi: 10.1109/NMDC.2016.7777117)
Georgiev, V. P. , Mirza, M. M. , Dochioiu, A.-I., Lema, F.-A., Amoroso, S. M., Towie, E., Riddet, C., MacLaren, D. A. , Asenov, A. and Paul, D. J.
(2016)
Experimental and Simulation Study of a High Current 1D Silicon Nanowire Transistor Using Heavily Doped Channels.
In: 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Toulouse, France, 9-12 Oct 2016,
ISBN 9781509043521
(doi: 10.1109/NMDC.2016.7777084)
Sadi, T., Towie, E., Nedjalkov, M., Riddet, C., Alexander, C., Wang, L., Georgiev, V. , Brown, A., Millar, C. and Asenov, A.
(2016)
One-Dimensional Multi-Subband Monte Carlo Simulation of Charge Transport in Si Nanowire Transistors.
In: SISPAD 2016: International Conference on Simulation of Semiconductor Processes and Devices, Nuremberg, Germany, 6-8 Sept 2016,
pp. 23-26.
ISBN 9781509008186
(doi: 10.1109/SISPAD.2016.7605139)
Al-Ameri, T. , Georgiev, V. P. , Lema, F.-A., Sadi, T., Wang, X., Towie, E., Riddet, C., Alexander, C. and Asenov, A.
(2016)
Impact of Strain on the Performance of Si Nanowires Transistors at the Scaling Limit: A 3D Monte Carlo/2D Poisson Schrodinger Simulation Study.
In: SISPAD 2016: International Conference on Simulation of Semiconductor Processes and Devices, Nuremberg, Germany, 6-8 Sept 2016,
pp. 213-216.
ISBN 9781509008186
(doi: 10.1109/SISPAD.2016.7605185)
Al-Ameri, T. , Georgiev, V. , Adamu-Lema, F. and Asenov, A.
(2016)
Influence of Quantum Confinement Effects and Device Electrostatic Driven Performance in Ultra-Scaled SixGe1-x Nanowire Transistors.
In: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2016), Vienna, Austria, 25-27 Jan 2016,
pp. 234-237.
ISBN 9781467386104
(doi: 10.1109/ULIS.2016.7440096)
Asenov, A. , Wang, Y., Cheng, B., Wang, X., Asenov, P., Al-Ameri, T. and Georgiev, V.P.
(2016)
Nanowire Transistor Solutions for 5NM and Beyond.
In: 2016 17th International Symposium on Quality Electronic Design (ISQED), Santa Clara, CA, USA, 15-16 Mar 2016,
pp. 269-274.
(doi: 10.1109/ISQED.2016.7479212)
2015
Georgiev, V.P. , Ali, T. , Wang, Y., Gerrer, L., Amoroso, S.M. and Asenov, A.
(2015)
Influence of Quantum Confinement Effects over Device Performance in Circular and Elliptical Silicon Nanowire Transistors.
In: 2015 International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA, 2-4 Sept 2015,
(doi: 10.1109/IWCE.2015.7301960)
Donetti, L., Sampedro, C., Gamiz, F., Godoy, A., Garcıa-Ruız, F. J., Towie, E., Georgiev, V. , Amoroso, S. M., Riddet, C. and Asenov, A.
(2015)
Multi-Subband Ensemble Monte Carlo Simulation of Si Nanowire MOSFETs.
In: SISPAD: International Conference on Semiconductor Process and Device Simulations, Washington, DC, USA, 9-11 Sept 2015,
pp. 353-356.
ISBN 9781467378581
(doi: 10.1109/SISPAD.2015.7292332)
Georgiev, V. P. , Amoroso, S. M., Gerrer, L., Adamu-Lema, F. and Asenov, A.
(2015)
Interplay between quantum mechanical effects and a discrete trap position in ultrascaled FinFETs.
In: SISPAD 2015: International Conference on Semiconductor Process and Device Simulations, Washington, DC, USA, 9-11 Sept 2015,
pp. 246-249.
ISBN 9781467378581
(doi: 10.1109/SISPAD.2015.7292305)
Kivisaari, P., Sadi, T., Li, J., Georgiev, V. , Oksanen, J., Rinke, P. and Tulkki, J.
(2015)
Bipolar Monte Carlo Simulation of Hot Carriers In III-N LEDs.
In: SISPAD: International Conference on Semiconductor Process and Device Simulations, Washington, DC, USA, 9-11 Sept 2015,
pp. 393-396.
ISBN 9781467378581
(doi: 10.1109/SISPAD.2015.7292342)
Wang, Y. et al.
(2015)
Simulation study of the impact of quantum confinement on the electrostatically driven oerformance of n-type nanowire transistors.
IEEE Transactions on Electron Devices, 62(10),
pp. 3229-3236.
(doi: 10.1109/TED.2015.2470235)
Gerrer, L., Georgiev, V. , Amoroso, S.M., Towie, E. and Asenov, A.
(2015)
Comparison of Si <100> and <110> crystal orientation nanowire transistor reliability using Poisson–Schrödinger and classical simulations.
Microelectronics Reliability, 55(9-10),
pp. 1307-1312.
(doi: 10.1016/j.microrel.2015.06.094)
Georgiev, V. P. , Amoroso, S. M., Ali, T. M., Vila-Nadal, L. , Busche, C. , Cronin, L. and Asenov, A.
(2015)
Comparison between bulk and FDSOI POM flash cell: a multiscale simulation study.
IEEE Transactions on Electron Devices, 62(2),
pp. 680-684.
(doi: 10.1109/TED.2014.2378378)
Al-Ameri, T. , Wang, Y., Georgiev, V.P. , Adamu-Lema, F., Wang, X. and Asenov, A.
(2015)
Correlation between Gate Length, Geometry and Electrostatic Driven Performance in Ultra-Scaled Silicon Nanowire Transistors.
In: 10th IEEE Nanotechnology Materials and Devices Conference (NMDC), Anchorage, AK, USA, 13-16 Sep 2015,
pp. 30-34.
ISBN 9781467393621
(doi: 10.1109/NMDC.2015.7439240)
Georgiev, V. and Asenov, A.
(2015)
Multi-scale computational framework for evaluating of the performance of molecular based flash cells.
Lecture Notes in Computer Science, 8962,
pp. 196-203.
(doi: 10.1007/978-3-319-15585-2_22)
Sadi, T., Wang, L., Gerrer, L., Georgiev, V. and Asenov, A.
(2015)
Self-consistent physical modeling of SiOx-based RRAM structures.
In: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA, 2-4 Sep 2015,
pp. 1-4.
ISBN 978069251523515
(doi: 10.1109/IWCE.2015.7301981)
2014
Amoroso, S. M., Georgiev, V. P. , Gerrer, L., Towie, E., Wang, X., Riddet, C., Brown, A. R. and Asenov, A.
(2014)
Inverse scaling trends for charge-trapping-induced degradation of FinFETs performance.
IEEE Transactions on Electron Devices, 61(12),
pp. 4014-4018.
(doi: 10.1109/TED.2014.2363212)
Busche, C. et al.
(2014)
Design and fabrication of memory devices based on nanoscale polyoxometalate clusters.
Nature, 515(7528),
pp. 545-549.
(doi: 10.1038/nature13951)
(PMID:25409147)
Georgiev, V. , Amoroso, S. and Asenov, A.
(2014)
3D Multi-Subband Ensemble Monte Carlo Simulator of FinFETs and nanowire transistors.
In: 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan, 9-11 Sep 2014,
Georgiev, V. P. , Markov, S., Vila-Nadal, L. , Busche, C. , Cronin, L. and Asenov, A.
(2014)
Optimization and evaluation of variability in the programming window of a flash cell with molecular metal-oxide storage.
IEEE Transactions on Electron Devices, 61(6),
pp. 2019-2026.
(doi: 10.1109/TED.2014.2315520)
Amoroso, S., Georgiev, V. , Towie, E., Riddet, C. and Asenov, A.
(2014)
Metamorphosis of a nanowire: a 3-D coupled mode space NEGF study.
In: 2014 International Workshop on Computational Electronics (IWCE), Paris, France, 3-6 June 2014,
pp. 1-4.
(doi: 10.1109/IWCE.2014.6865854)
Georgiev, V. P. , Amoroso, S. M., Vila-Nadal, L. , Busche, C. , Cronin, L. and Asenov, A.
(2014)
FDSOI Molecular Flash Cell with Reduced Variability for Low Power Flash Applications.
In: 44th European Solid-State Device Research Conference (ESSDERC), Venice, Italy, 22-26 Sep 2014,
pp. 353-356.
ISBN 9781479943760
(doi: 10.1109/ESSDERC.2014.6948833)
2013
Vilà-Nadal, L. , Mitchell, S. G., Markov, S., Busche, C. , Georgiev, V. , Asenov, A. and Cronin, L.
(2013)
Towards polyoxometalate-cluster-based nano-electronics.
Chemistry: A European Journal, 19(49),
pp. 16502-16511.
(doi: 10.1002/chem.201301631)
Georgiev, V.P. , Towie, E.A. and Asenov, A.
(2013)
Impact of precisely positioned dopants on the performance of an ultimate silicon nanowire transistor: a full three-dimensional NEGF simulation study.
IEEE Transactions on Electron Devices, 60(3),
pp. 965-971.
(doi: 10.1109/TED.2013.2238944)
Georgiev, V.P. , Mohan, P.J., DeBrincat, D. and McGrady, J.E.
(2013)
Low-symmetry distortions in Extended Metal Atom Chains (EMACs): Origins and consequences for electron transport.
Coordination Chemistry Reviews, 257(1),
pp. 290-298.
(doi: 10.1016/j.ccr.2012.05.025)
Georgiev, V. P. , Markov, S., Vilà-Nadal, L. , Asenov, A. and Cronin, L.
(2013)
Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular Limit.
In: 16th International Workshop on Computational Electronics, Nara, Japan, 4-7 June 2013,
ISBN 9783901578267
Georgiev, V. P. , Markov, S., Vila-Nadal, L. , Busche, C., Cronin, L. and Asenov, A.
(2013)
Multi-scale computational framework for the evaluation of variability in the programing window of a flash cell with molecular storage.
In: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Bucharest, Romania, 16-20 Sep 2013,
pp. 230-233.
(doi: 10.1109/ESSDERC.2013.6818861)
Georgiev, V. P. , Towie, E. A. and Asenov, A.
(2013)
Interaction Between Precisely Placed Dopants and Interface Roughness in Silicon Nanowire Transistors: Full 3-D NEGF Simulation Study.
In: 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2013), Glasgow, Scotland, 3-5 Sep 2013,
pp. 416-419.
ISBN 9781467357333
(doi: 10.1109/SISPAD.2013.6650663)
2012
Mohan, P.J., Georgiev, V.P. and McGrady, J.E.
(2012)
Periodic trends in electron transport through extended metal atom chains: comparison of Ru3(dpa)4(NCS)2 with its first-row analogues.
Chemical Science, 3(4),
pp. 1319-1329.
(doi: 10.1039/C2SC01024K)
Georgiev, V.P. , Sameera, W.M.C. and McGrady, J.E.
(2012)
Attenuation of conductance in cobalt extended metal atom chains.
Journal of Physical Chemistry C, 116(38),
pp. 20163-20172.
(doi: 10.1021/jp304807w)
Mistry, V.S., Georgiev, V.P. and McGrady, J.E.
(2012)
Electron transport through molecular wires based on a face-shared bioctahedral motif.
Comptes Rendus Chimie, 15(2-3),
pp. 176-183.
(doi: 10.1016/j.crci.2011.11.001)
2011
Georgiev, V.P. and McGrady, J.E.
(2011)
The influence of low-symmetry distortions on electron transport through metal atom chains: when is a molecular wire really broken?
Journal of the American Chemical Society, 133(32),
pp. 12590-12599.
(doi: 10.1021/ja2028475)
2010
Georgiev, V. and McGrady, J.E.
(2010)
Efficient spin filtering through cobalt-based extended metal atom chains.
Inorganic Chemistry, 49(12),
(doi: 10.1021/ic100493t)
Velinova, M., Georgiev, V. , Todorova, T., Madjarova, G., Ivanova, A. and Tadjer, A.
(2010)
Boron–nitrogen- and boron-substituted anthracenes and -phenanthrenes as models for doped carbon-based materials.
Journal of Molecular Structure: THEOCHEM, 955(1-3),
pp. 97-108.
(doi: 10.1016/j.theochem.2010.06.003)
2004
Dietz, F., Müllen, K., Baumgarten, M., Georgiev, V.P. and Tyutyulkov, N.
(2004)
Structure and properties of non-classical polymers. XIV. Heteronuclear 1-D polymers with 2-azaphenalenyl radicals.
Chemical Physics Letters, 389(1-3),
pp. 135-139.
(doi: 10.1016/j.cplett.2004.03.058)
This list was generated on Sun Dec 1 21:43:41 2024 GMT.