Project Information

Defect Simulations and Material Growth of III-V Nanostructures –European Industrial Doctorate (DESIGN-EID) is an innovate programme providing a unique research training opportunity for a cohort of 3 Early Stage Researchers (ESRs) in the novel and multidisciplinary field of semiconductoropto-electronic technology. The DESIGN-EID project offers strategic training opportunities with exceptional prospects for career development in both academia and industry. 

There is a great interest in integrating compound semiconductors either monolithically or heterogeneously on silicon to exploit their complementary properties. Particularly to exploit the direct bandgap of III-Vs for opto-electronic devices densely integrated with CMOS. However, lattice and thermal mismatch between materials makes epitaxial growth on silicon challenging.

In this project we will address the challenges associated with the formation of defects and material growth in compound semiconductors such as III-Vs as well as their impact on device performance. Defects may be exploited in the development of novel devices, but more often we wish to mitigate their deteriorating impact on electro-optic device performance, by growth and materials optimization. The project combines experimental work at IBM Research Zurich (IBM) with modelling and simulation efforts at Device Modelling Group (University of Glasgow) and Synopsys QuantumATK (ATK)


This project could not be possible without the efforts and tutoring of the following supervisors that ensure that our ESR's are on the right track to develop their carrears and build up knowledge.


Dr. Kirsten Emilie Moselund is a Research Staff Member and manager of the Materials Integration and Nanoscale Devices group at IBM Research – Zurich and works on projects in the area of novel materials integration on silicon for ultra-low power electronic devices, and exploratorz electronic and photonic devices. In particular her work at IBM focuses on complementary tunnel FETs based on the integration of III-V heterostructures on silicon, as well as monolihicallz integrated nanophotonic emitters. She received the M.Sc. degree in engineering from the Technical University of Denmark, Lyngby, Denmark, in 2003 and the Ph.D. degree in microelectronics from the Swiss Federal Institute of Technology in Lausanne (EPFL), Lausanne, Switzerland, in 2008 for her work on top-down silicon nanowire electronic devices. In 2008, she joined the IBM Zurich Research Laboratory, Zurich, Switzerland. Throughout her career she has worked with the design, fabrication and characterization of silicon and III-V semiconductor devices, both for photonic and electronic applications. Her research interests include semiconductor physics, advanced transistor concepts, and nanoelectronic fabrication technology.

Ms. Marilyne Sousa is a seniour engineer who joined the IBM Research - Zurich Laboratory in 2000. Involved in various projects ranging from the optimization of OLED materials to the optimization of oxides or III-Vs, she is currently a member of the Material Integration and Nanoscale Devices group and responsible for thin films material characterization using spectroscopic ellipsometry and transmission electron microscopy. In the frame of the TEM activity, she is interested in the application of machine learning algorithms to guide the data analyses. She has also contributed to the Optical Waveguide and the Display Technology groups. Prior to joining IBM Research, Marilyne was at Altis Semiconductor (now X-Fab), France, where she was an optical characterization engineer working on materials for field effect transistors and memory devices. Before that, she spent one year working in a joint project between Jobin-Yvon and Laboratoire pour l'Utilisation du Rayonnement Electromagnetique (LURE) on the development of an optical profilometer. Marilyne took her Master's degree in Optics and Photonics from the University of Orsay, France, in 1998.

Synopsys QuantumATK 

Dr. Kurt Stokbro is an internationally recognized researcher and serial entrepreneur. He is director of Synopsys Denmark and responsible for the atomic-scale simulation activities within Synopsys. He is founder of QuantumWise A/S which in 2017 was acquired by Synopsys. He has previously held a professorship at Copenhagen University and positions at Technical University of Denmark, where he has coordinated a number of EU and Danish-funded R&D projects. Dr. Stokbro has published more than 80 papers and review articles in international journals with +7500 citations and a h-index of 34. He has held a large number of lectures as invited speaker and has organised 3 international conferences in nanoscience. The scheme for ab initio calculations of quantum transport, developed by Dr. Stokbro and co-workers, has become the de facto standard for electron transport calculations and has laid the foundation for QuantumWise A/S and Atomistix A/S.

Mr. Søren Nordland Smidstrup is a senior R&D manager at Synopsys QuantumATK. He oversees the development of the atomic-scale simulation activities within Synopsys. He was previously scientific software development at Atomistix A/S. After this he was software development manager and CTO of QuantumWise A/S. He has published more than 60 papers and review articles in international journals. 

University of Glasgow

Dr. Vihar Petkov Georgiev received his BSc and MSc degrees in chemistry and computational chemistry from Sofia University, Bulgaria in 2004 and 2006, correspondingly. He received the PhD degree from the University of Oxford in 2011. In 2011, he joined the Device Modelling Group, School of Engineering, University of Glasgow, where he was a Research Associate until August 2015. Form August 2015 until August 2019 he was a Lecturer and currently he is a Senior Lecturer in Electronics and Nanoscale Engineering and the Deputy Leader of the Device Modeling Group in the School of Engineering, University of Glasgow.


Early Stage Researchers (ESR)

ESR1 will mainly focus on aspects related to III-V materials epitaxial growth on silicon, TEM analysis and development of a machine learning algorithm for defect classification. We also foresee the development of simulation framework to model the electronic and optical properties of individual defects.

Employment: IBM Research Zurich (Switzerland) (22 Months) & University of Glasgow (UK) (14 Months).

Name: Enrico Brugnolotto

Bio: MSc and BSc  in Materials Science at Università degli studi di Padova (IT). He graduated with top marks and cum laude, with a thesis regarding the mapping of thermally induced stress in semiconductor systems, using spectroscopic tools. He choses that thesis topic because it brought together various disciplines he is fascinated with, such as semiconductor physics, spectroscopy, and engineering, offering a multidisciplinary problem that in my mind summarized the academic career he has followed.

ESR2 will explore the role of defects in the context of opto-electronic device performance, this will be done first via simulation where optimized designs will be developed, and later these will be fabricated by the ESR at IBM.

Employment: University of Glasgow (UK) (14 Months) & IBM Research Zurich (Switzerland) (22 Months)

Name: Cristina Martínez Oliver

Bio: BSc in Nanoscience and Nanotechnology in the Universitat Autònoma of Barcelona (ESP), with a call in the physics and engineering branches. She did an internship before the end of 4th year of bachelor, during summer. This took place in the association CIC nanoGUNE, and she worked in the nanomagnetism group. At the end of her bachelor degree she did her thesis in the Barcelona Microelectronics Institute of the National Microelectronics Centre-CSIC. 

MSc in Functionalized Advanced Materials for Engineering (FAME) master in the Grenoble INP University. At the end of the first year of the Master, she did a 12 weeks internship in Institut Néelin Grenoble and at the second year of the FAME Master she decided to do it in the Technical University of Darmstadt. She did her master thesis in the Bosch company. 

ESR3 will develop theoretical models which will describe the complexity of the material growth process and defect formation in III-V materials. Those models will be implemented in state-of-the-art QuantumATK commercial simulation framework.

Employment: University of Glasgow (UK) (12 Months), Synopsys QuantumATK (Denmark) (24 Months)

Name: Christian Dam Vedel

Bio: BSc and MSc in Physics and Nanotechnology at Technical University of Denmark (DTU). He has an outstanding academic record and with skills in computational physics, programming and solid-state physics.  Currently he is on DTU’s “Honours programme” for the top 10% best students for my MSc. degree. This has given him the freedom, to tailor his MSc. degree, even more, in the direction of computational solid-state physics.


Research Background


Here is an excellent presentation given by Dr. Kirsten Moselund about the technology behind the project. 


Wurtzite InP Microdisks: from Epitaxy to Room-Temperature Lasing

Philipp Staudinger, Svenja Mauthe, Noelia Vico Triviño, Steffen Reidt, Kirsten E. Moselund, Heinz Schmid

arXiv:2004.10677v1 [] 22 Apr 2020


Exploring the Size Limitations of Wurtzite III–V Film Growth

Philipp Staudinger, Kirsten E. Moselund, Heinz Schmid

Nano Lett. 20(1), 686-693, 2020


InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities

C. Convertino, C. Zota, H. Schmid, D. Caimi, M. Sousa, K. Moselund, L. Czornomaz

Materials 12 (1), 87, 2019


Concurrent Zinc-Blende and Wurtzite Film Formation by Selection of Confined Growth Planes

Philipp Staudinger, Svenja Mauthe, Kirsten E. Moselund, Heinz Schmid

Nano Letters 18 (12), 7856-7862, 2018


III-V heterostructure tunnel field-effect transistor

C. Convertino, C. Zota, H. Schmid, A. Ionescu, K. Moselund

Journal of Physics: Condensed Matter 30 (26), 264005, IOP Publishing, 2018


Contact us

For more information please contact:

Dr. Vihar Georgiev (