Professor Stephen Sweeney

Professor of Photonics and Nanotechnology (Electronic & Nanoscale Engineering)

telephone: 01413304076
email: Stephen.J.Sweeney@glasgow.ac.uk

Rm 701, Rankine building, Oakfield Ave, Glasgow, G12 8LT

Biography

Professor Stephen Sweeney holds a BSc in Applied Physics and Qualified Teacher Status (QTS) from the University of Bath and a PhD in Semiconductor Laser Physics from the University of Surrey. Following his PhD and postdoctoral positions, he joined Marconi Optical Components as a Scientist, becoming Lead Scientist of the Laser and Amplifier Technology group. He returned to Surrey as a Lecturer, promoted to Chair in Physics in 2010. He led the Photonics group based in the Advanced Technology Institute from 2010-2015 and was Head of the Department of Physics from 2015-2018. He was awarded a prestigious EPSRC Leadership Fellowship allowing him to focus on developing near- and mid-infrared laser technologies for applications in high efficiency optical communications, sensing and photonic integration. In 2022, he moved to the James Watt School of Engineering at the University of Glasgow as Professor of Photonics and Nanotechnology where he leads the Semiconductor Photonic Materials and Devices group.

In addition to his academic role, he is the Chief Technology Officer for UK photonics start-up Zinir Ltd, he has sat on the Editorial Boards of IEEE Journal of Quantum Electronics and Journal of Materials Science: Materials in Electronics, has guest edited IET Optoelectronics, IEEE Journal of Selected Topics in Quantum Electronics and IoP Semiconductor Science and Technology. His other roles have included membership of the EPSRC III-V National Centre Steering Committee, the EPSRC and UKRI Colleges and the Institute of Physics Semiconductor Physics committee. He serves as an expert international advisor for the EU and several national funding agencies such as the Department of Energy (USA), National Science Foundation (USA), Singapore Research Agency, Enterprise Ireland, Leibnitz Foundation, FWO Belgium amongst others. He sits on the committees for a number of international conferences and has chaired several conferences in semiconductors and photonics. In 2015 he was President of the Physics and Astronomy section of the British Science Association. He is a Fellow of the Institute of Physics and a Fellow of SPIE.

Stephen is passionate about science and engineering and their role in the health and wealth of society. He enjoys engaging with people of all ages and regularly gives talks at schools, interviews for the national press and is an advocate for UK science and technology globally.

Research interests

Working closely with industry, Stephen's research interests range from developing new semiconductors for use in photonic devices such as lasers and photovoltaics through to the development of new photonic systems for use in communications, lighting, energy, biosciences, health and the emerging field of space-based photonics.

His work has led to a large number of published and edited journal papers, book chapters and patents.

List of publications available on Google Scholar

Publications

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Number of items: 162.

2024

Yu, X. et al. (2024) Effects of phosphorous and antimony doping on thin Ge layers grown on Si. Scientific Reports, 14(1), 7969. (doi: 10.1038/s41598-024-57937-8) (PMID:38575676) (PMCID:PMC10995153)

Baltušis, A., Koutsourakis, G., Wood, S. and Sweeney, S. J. (2024) Development of time-resolved photoluminescence microscopy of semiconductor materials and devices using a compressed sensing approach. Measurement Science and Technology, 35(1), 015207. (doi: 10.1088/1361-6501/ad044f)

2023

Ren, A. et al. (2023) High-bandwidth perovskite photonic sources on silicon. Nature Photonics, 17(9), pp. 798-805. (doi: 10.1038/s41566-023-01242-9)

Khamari, S. K., Arslan, S., Zink, C., Sweeney, S. J. and Crump, P. (2023) Carrier density non-pinning at stripe edges and widened lateral far field due to longitudinal temperature variation in broad-area high power diode lasers. Applied Physics Letters, 122(21), 211101. (doi: 10.1063/5.0149986)

2022

Li, B. et al. (2022) Suppressing interfacial recombination with a strong‐interaction surface modulator for efficient inverted perovskite solar cells. Advanced Energy Materials, 12(48), 2202868. (doi: 10.1002/aenm.202202868)

Webb, T. et al. (2022) A multifaceted ferrocene interlayer for highly stable and efficient lithium doped spiro‐OMeTAD‐based perovskite solar cells. Advanced Energy Materials, 12(26), 2200666. (doi: 10.1002/aenm.202200666)

Braddock, I. H. B., Al Sid Cheikh, M., Ghosh, J., Mulholland, R. E., O’Neill, J. G., Stolojan, V., Crean, C., Sweeney, S. J. and Sellin, P. J. (2022) Formamidinium lead halide perovskite nanocomposite scintillators. Nanomaterials, 12(13), 2141. (doi: 10.3390/nano12132141)

Fitch, C. R., Duffy, D. A., Ludewig, P., Stolz, W. and Sweeney, S. J. (2022) Refractive index dispersion of BGa(As)P alloys in the near-infrared for III-V laser integration on silicon. Journal of Applied Physics, 131(13), 133102. (doi: 10.1063/5.0081069)

Liu, X. et al. (2022) Influence of halide choice on formation of low‐dimensional perovskite interlayer in efficient perovskite solar cells. Energy and Environmental Materials, 5(2), pp. 670-682. (doi: 10.1002/eem2.12321)

Fitch, C. R., Baltusis, A., Marko, I. P., Jung, D., Norman, J. C., Bowers, J. E. and Sweeney, S. J. (2022) Carrier recombination properties of low-threshold 1.3 μm quantum dot lasers on silicon. IEEE Journal of Selected Topics in Quantum Electronics, 28(1), 1900210. (doi: 10.1109/JSTQE.2021.3101293)

2021

Webb, T., Sweeney, S. J. and Zhang, W. (2021) Device architecture engineering: progress toward next generation perovskite solar cells. Advanced Functional Materials, 31(35), 2103121. (doi: 10.1002/adfm.202103121)

Skhunov, M., Solodukhin, A. N., Giannakou, P., Askew, L., Luponosov, Y. N., Balakirev, D. O., Kalinichenko, N. K., Marko, I. P., Sweeney, S. J. and Ponomarenko, S. A. (2021) Pixelated full-colour small molecule semiconductor devices towards artificial retinas. Journal of Materials Chemistry C, 9(18), pp. 5858-5867. (doi: 10.1039/D0TC05383J)

Yavari, M. et al. (2021) A synergistic Cs2CO3 ETL treatment to incorporate Cs cation into perovskite solar cells via two-step scalable fabrication. Journal of Materials Chemistry C, 9(12), pp. 4367-4377. (doi: 10.1039/D0TC05877G)

Fitch, C. R., Read, G. W., Marko, I. P., Duffy, D. A., Cerutti, L., Rodriguez, J.-B., Tournié, E. and Sweeney, S. J. (2021) Thermal performance of GaInSb quantum well lasers for silicon photonics applications. Applied Physics Letters, 118(10), 101105. (doi: 10.1063/5.0042667)

2020

Sweeney, S. (2020) Selective light transmission as a leading innovation for solar swimming pool covers. Solar Energy, 207, pp. 388-397. (doi: 10.1016/j.solener.2020.06.022)

2019

Eales, T. D. et al. (2019) Ge1-xSnx alloys: consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration. Scientific Reports, 9, 14077. (doi: 10.1038/s41598-019-50349-z) (PMID:31575881) (PMCID:PMC6773784)

Sharpe, M.K., Marko, I.P., Duffy, D.A., England, J., Schneider, E., Kesaria, M., Federov, V., Clarke, E., Tan, C.H. and Sweeney, S.J. (2019) A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques. Journal of Applied Physics, 12, 125706. (doi: 10.1063/1.5109653)

2018

Bushell, Z.L., Joseph, R.M., Nattermann, L., Ludewig, P., Volz, K., Keddie, J.L. and Sweeney, S. J. (2018) Optical functions and critical points of dilute bismide alloys studied by spectroscopic ellipsometry. Journal of Applied Physics, 123(4), 045701. (doi: 10.1063/1.5006974)

2017

Eales, T. D., Marko, I. P., Ikyo, B. A., Adams, A. R., Arafin, S., Sprengel, S., Amann, M.-C. and Sweeney, S. J. (2017) Wavelength dependence of efficiency limiting mechanisms in Type-I Mid-Infrared GaInAsSb/GaSb lasers. IEEE Journal of Selected Topics in Quantum Electronics, 23(6), 1500909. (doi: 10.1109/JSTQE.2017.2687823)

Marko, I. P. and Sweeney, S. J. (2017) Progress toward III-V bismide alloys for near- and midinfrared laser diodes. IEEE Journal of Selected Topics in Quantum Electronics, 23(6), 1501512. (doi: 10.1109/JSTQE.2017.2719403)

Bushell, Z.L., Florescu, M. and Sweeney, S.J. (2017) High-Q photonic crystal cavities in all-semiconductor photonic crystal heterostructures. Physical Review B, 95, 235303. (doi: 10.1103/PhysRevB.95.235303)

Eales, T., Marko, I.P., Ikyo, B.A., Adams, A.R., Vurgaftman, I., Arafin, S., Sprengel, S., Amann, M.-C., Meyer, J.R. and Sweeney, S.J. (2017) Auger Recombination in Type I GaInAsSb/GaSb Lasers and Its Variation with Wavelength in the 2-3 μm Range. In: The European Conference on Lasers and Electro-Optics 2017, Munich, Germany, 25–29 Jun 2017, ISBN 9781509067367

Broderick, C. A. et al. (2017) GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics. Scientific Reports, 7, 46371. (doi: 10.1038/srep46371)

Broderick, C.A. et al. (2017) Strain-balanced Type-ii Superlattices on Gaas: Novel Heterostructures for Photonics and Photovoltaics. In: 2017 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Copenhagen, Denmark, 24-28 July 2017, pp. 115-116. ISBN 9781509053230 (doi: 10.1109/NUSOD.2017.8010018)

Maspero, R., Sweeney, S.J. and Florescu, M. (2017) Unfolding the band structure of GaAsBi. Journal of Physics: Condensed Matter, 29, 075001. (doi: 10.1088/1361-648X/aa50d7) (PMID:28008883)

2016

Nattermann, L. et al. (2016) MOVPE growth and characterization of quaternary Ga(PAsBi)/GaAs alloys for optoelectronic applications. Applied Materials Today, 5, pp. 209-214. (doi: 10.1016/j.apmt.2016.09.018)

Bonmati-Carrion, M. A., Hild, K., Isherwood, C., Sweeney, S. J. , Revell, V. L., Skene, D. J., Rol, M. A. and Madrid, J. A. (2016) Relationship between human pupillary light reflex and circadian system status. PLoS ONE, 11(9), e0162476. (doi: 10.1371/journal.pone.0162476) (PMID:27636197) (PMCID:PMC5026360)

Eales, T., Marko, I. P., Ikyo, B. A., Adams, A. R., Arafin, S., Sprengel, S., Amann, M.-C. and Sweeney, S. J. (2016) Wavelength Dependence of Efficiency Limiting Mechanisms in Type I GaInAsSb/GaSb Lasers Emitting in the Mid-infrared. In: 2016 International Semiconductor Laser Conference (ISLC), Kobe, Japan, 12-15 Sep 2016, ISBN 9784885523069

Marko, I. P., Broderick, C. A., Jin, S., Ludewig, P., Stolz, W., Volz, K., Rorison, J. M., O'Reilly, E. P. and Sweeney, S. J. (2016) Optical Gain in GaAsBi/GaAs Quantum Well Diode Lasers. In: 2016 International Semiconductor Laser Conference (ISLC), Kobe, Japan, 12-15 Sep 2016, ISBN 9784885523069

Marko, I. P., Broderick, C. A., Jin, S., Ludewig, P., Stolz, W., Volz, K., Rorison, J. M., O'Reilly, E. P. and Sweeney, S. J. (2016) Optical gain in GaAsBi/GaAs quantum well diode lasers. Scientific Reports, 6, 28863. (doi: 10.1038/srep28863) (PMID:27363930) (PMCID:PMC4929443)

Broderick, C. A., Rorison, J. M., Marko, I. P., Sweeney, S. J. and O'Reilly, E. P. (2016) GaAs-based Dilute Bismide Semiconductor Lasers: Theory Vs. Experiment. In: 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Sydney, NSW, Australia, 11-15 Jul 2016, pp. 209-210. ISBN 9781467386036 (doi: 10.1109/NUSOD.2016.7546999)

Broderick, C. A., Xiong, W., Sweeney, S. J. , O'Reilly, E. P. and Rorison, J. M. (2016) Dilute Bismide Alloys Grown on GaAs and InP Substrates for Improved Near- and Mid-infrared Semiconductor Lasers. In: 2016 18th International Conference on Transparent Optical Networks (ICTON), Trento, Italy, 10-14 Jul 2016, ISBN 9781509014675 (doi: 10.1109/ICTON.2016.7550303)

Ikyo, A.B., Marko, I.P., Hild, K., Adams, A.R., Arafin, S., Amann, M.-C. and Sweeney, S.J. (2016) Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs). Scientific Reports, 6, 19595. (doi: 10.1038/srep19595) (PMID:26781492) (PMCID:PMC4726019)

2015

Simmons, R.A., Jin, S.R., Sweeney, S.J. and Clowes, S.K. (2015) Enhancement of Rashba interaction in GaAs/AlGaAs quantum wells due to the incorporation of bismuth. Applied Physics Letters, 107(14), 142401. (doi: 10.1063/1.4932122)

Waché, R., Florescu, M., Sweeney, S. J. and Clowes, S. K. (2015) Selectively Reflective Transparent Sheets. In: SPIE Nanoscience + Engineering 2015, San Diego, California, USA, 9-13 Aug 2015, ISBN 9781628417128 (doi: 10.1117/12.2188622)

Chai, G. M.T. et al. (2015) Experimental and modelling study of InGaBiAs/InP alloys with up to 5.8% Bi, and with Δso > Eg. Semiconductor Science and Technology, 30, 094015. (doi: 10.1088/0268-1242/30/9/094015)

O'Reilly, E. P., Sweeney, S. J. , Wang, S. and Zide, J. M.O. (2015) Dilute bismides and related alloys. Semiconductor Science and Technology, 30, 090301. (doi: 10.1088/0268-1242/30/9/090301)

Sweeney, S.J. , Marko, I.P., Jin, S.R., Hild, K. and Batool, Z. (2015) Bismuth-based semiconductors for mid-infrared photonic devices. In: 2015 IEEE Summer Topicals Meeting Series (SUM), Nassau, Bahamas, 13-15 Jul 2015, pp. 181-182. ISBN 9781479974689 (doi: 10.1109/PHOSST.2015.7248257)

Marko, I.P. et al. (2015) Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers. Semiconductor Science and Technology, 30, 094008. (doi: 10.1088/0268-1242/30/9/094008)

Thomas, T., Mellor, A., Hylton, N.P., Führer, M., Alonso-Álvarez, D., Braun, A., Ekins-Daukes, N.J., David, J.P.R. and Sweeney, S.J. (2015) Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell. Semiconductor Science and Technology, 30, 094010. (doi: 10.1088/0268-1242/30/9/094010)

Sweeney, S.J. and Jha, A. (2015) Preface. In: International Conference on Optical, Optoelectronic and Photonic Materials and Applications (ICOOPMA) 2014, Leeds, UK, 27 Jul-1 Aug 2014, (doi: 10.1088/1742-6596/619/1/011001)

Prins, A.D., Lewis, M.K., Bushell, Z.L., Sweeney, S.J. , Liu, S. and Zhang, Y.-H. (2015) Evidence for a defect level above the conduction band edge of InAs/InAsSb type-II superlattices for applications in efficient infrared photodetectors. Applied Physics Letters, 106(17), 171111. (doi: 10.1063/1.4919549)

Read, G. W., Marko, I. P., Hossain, N. and Sweeney, S. J. (2015) Physical properties and characteristics of III-V lasers on silicon. IEEE Journal of Selected Topics in Quantum Electronics, 21(6), 1502208. (doi: 10.1109/JSTQE.2015.2424923)

Adams, A. R., Marko, I. P., Mukherjee, J., Stolojan, V., Sweeney, S. J. , Gocalinska, A., Pelucchi, E., Thomas, K. and Corbett, B. (2015) Semiconductor quantum well lasers with a temperature-insensitive threshold current. IEEE Journal of Selected Topics in Quantum Electronics, 21(6), 1500806. (doi: 10.1109/JSTQE.2015.2413403)

Jha, A. and Sweeney, S. J. (2015) Optical, optoelectronic and photonic materials and applications. Semiconductor Science and Technology, 30, 040301. (doi: 10.1088/0268-1242/30/4/040301)

Marko, I. P. and Sweeney, S. J. (2015) Optical and electronic processes in semiconductor materials for device applications. In: Singh, J. and Williams, R.T. (eds.) Excitonic and Photonic Processes in Materials. Series: Springer series in materials science (203). Springer: Singapore, pp. 253-297. ISBN 9789812871312 (doi: 10.1007/978-981-287-131-2_9)

2014

Adams, A.R., Marko, I.P., Mukherjee, J., Sweeney, S.J. , Gocalinska, A., Pelucchi, E. and Corbett, B. (2014) Semiconductor Quantum Well Lasers with a Temperature Insensitive Threshold Current. In: 2014 International Semiconductor Laser Conference, Palma de Mallorca, Spain, 7-10 Sep 2014, pp. 82-83. ISBN 9781479957217 (doi: 10.1109/ISLC.2014.174)

Sweeney, S.J. et al. (2014) Electrically Injected GaAsBi Quantum Well Lasers. In: 2014 International Semiconductor Laser Conference, Palma de Mallorca, Spain, 07-10 Sep 2014, pp. 80-81. ISBN 9781479957217 (doi: 10.1109/ISLC.2014.173)

Marko, I.P. et al. (2014) Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi. Journal of Physics D: Applied Physics, 47, 345103. (doi: 10.1088/0022-3727/47/34/345103)

Bushell, Z.L., Ludewig, P., Knaub, N., Batool, Z., Hild, K., Stolz, W., Sweeney, S.J. and Volz, K. (2014) Growth and characterisation of Ga(NAsBi) alloy by metal-organic vapour phase epitaxy. Journal of Crystal Growth, 396, pp. 79-84. (doi: 10.1016/j.jcrysgro.2014.03.038)

Mohmad, A.R., Bastiman, F., Hunter, C.J., Richards, R.D., Sweeney, S.J. , Ng, J.S., David, J.P.R. and Majlis, B.Y. (2014) Localization effects and band gap of GaAsBi alloys. Physica Status Solidi B: Basic Solid State Physics, 251(6), pp. 1276-1281. (doi: 10.1002/pssb.201350311)

Jarvis, S. D., Mukherjee, J., Perren, M. and Sweeney, S. J. (2014) Development and characterisation of laser power converters for optical power transfer applications. IET Optoelectronics, 8(2), pp. 64-70. (doi: 10.1049/iet-opt.2013.0066)

Marko, I.P., Adams, A.R., Massé, N.F. and Sweeney, S.J. (2014) Effect of non-pinned carrier density above threshold in InAs quantum dot and quantum dash lasers. IET Optoelectronics, 8(2), pp. 88-93. (doi: 10.1049/iet-opt.2013.0055)

Chai, G.M.T., Hosea, T.J.C., Fox, N.E., Hild, K., Ikyo, A.B., Marko, I.P., Sweeney, S.J. , Bachmann, A., Arafin, S. and Amann, M.-C. (2014) Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance. Journal of Applied Physics, 115(1), 013102. (doi: 10.1063/1.4861146)

2013

Jin, S. and Sweeney, S. J. (2013) InGaAsBi alloys on InP for efficient near- and mid-infrared light emitting devices. Journal of Applied Physics, 114(21), 213103. (doi: 10.1063/1.4837615)

Hild, K., Batool, Z., Jin, S.R., Hossain, N., Marko, I.P., Hosea, T.J.C., Lu, X., Tiedje, T. and Sweeney, S.J. (2013) Auger Recombination Suppression and Band Alignment in GaAsBi/GaAs Heterostructures. In: 31st International Conference on the Physics of Semiconductors (ICPS) 2012, Zurich, Switzerland, 29 Jul–3 Aug 2012, pp. 488-489. ISBN 9780735411944 (doi: 10.1063/1.4848498)

Hossain, N., Hosea, J., Liebich, S., Zimprich, M., Volz, K., Kunert, B., Stolz, W. and Sweeney, S.J. (2013) Band Structure Properties of (BGa)P Semiconductors for Lattice Matched Integration On (001) Silicon. In: 31st International Conference on the Physics of Semiconductors (ICPS) 2012, Zurich, Switzerland, 29 Jul–3 Aug 2012, pp. 47-48. ISBN 9780735411944 (doi: 10.1063/1.4848278)

Srinivasan, S., Tang, Y., Read, G., Hossain, N., Liang, D., Sweeney, S. J. and Bowers, J. E. (2013) Hybrid silicon devices for energy-efficient optical transmitters. IEEE Micro, 33(1), pp. 22-31. (doi: 10.1109/MM.2012.89)

Crutchley, B. G., Marko, I. P. and Sweeney, S. J. (2013) The influence of temperature on the recombination processes in blue and green InGaN LEDs. Physica Status Solidi C, 10(11), pp. 1533-1536. (doi: 10.1002/pssc.201300360)

Ongrai, O., Pearce, J.V., Machin, G. and Sweeney, S.J. (2013) Self-calibration of a W/Re Thermocouple Using a Miniature Ru-C (1954 °C) Eutectic Cell. In: 9th International Temperature Symposium on Temperature: Its Measurement and Control in Science and Industry, Los Angeles, California, USA, 19–23 Mar 2012, pp. 504-509. ISBN 9780735411784 (doi: 10.1063/1.4821392)

Pal, J., Migliorato, M.A., Li, C.-K., Wu, Y.-R., Crutchley, B.G., Marko, I.P. and Sweeney, S.J. (2013) Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management. Journal of Applied Physics, 114(7), 073104. (doi: 10.1063/1.4818794)

Lester, L. F., Kovanis, V., Chan, N. S.-C., Miyamoto, T. and Sweeney, S. J. (2013) Introduction to the issue on semiconductor lasers. IEEE Journal of Selected Topics in Quantum Electronics, 19(4), 0200503. (doi: 10.1109/JSTQE.2013.2272082)

Maspero, R., Sweeney, S.J. and Florescu, M. (2013) Modelling the Auger Recombination Rates of GaAs(1-x)Bi x Alloys. In: 2013 13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Vancouver, British Colombia, Canada, 19-22 Aug 2013, pp. 81-82. ISBN 9781467363105 (doi: 10.1109/NUSOD.2013.6633134)

Mukherjee, J., Jarvis, S., Perren, M. and Sweeney, S.J. (2013) Efficiency limits of laser power converters for optical power transfer applications. Journal of Physics D: Applied Physics, 46, 264006. (doi: 10.1088/0022-3727/46/26/264006)

Ludewig, P. et al. (2013) Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser. Applied Physics Letters, 102(24), 242115. (doi: 10.1063/1.4811736)

Jarvis, S., Mukherjee, J., Perren, M. and Sweeney, S. J. (2013) On The Fundamental Efficiency Limits of Photovoltaic Converters for Optical Power Transfer Applications. In: 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), Tampa, Florida, USA, 16-21 Jun 2013, pp. 1031-1035. ISBN 9781479932993 (doi: 10.1109/PVSC.2013.6744317)

Mukherjee, J., Wulfken, W., Hartje, H., Steinsiek, F., Perren, M. and Sweeney, S. J. (2013) Demonstration of Eye-safe (1550 nm) Terrestrial Laser Power Beaming at 30 m and Subsequent Conversion into Electrical Power Using Dedicated Photovoltaics. In: 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), Tampa, Florida, USA, 16-21 Jun 2013, pp. 1074-1076. ISBN 9781479932993 (doi: 10.1109/PVSC.2013.6744326)

Sweeney, S. J. , Hild, K. and Jin, S. (2013) The Potential of GaAsBiN for Multi-junction Solar Cells. In: 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), Tampa, Florida, USA, 16-21 Jun 2013, pp. 2474-2478. ISBN 9781479932993 (doi: 10.1109/PVSC.2013.6744977)

Crutchley, B. G., Marko, I. P., Adams, A. R. and Sweeney, S. J. (2013) Investigating the Efficiency Limitations of GaN-based Emitters. In: 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC, Munich, Germany, 12-16 May 2013, ISBN 9781479905942 (doi: 10.1109/CLEOE-IQEC.2013.6801007)

Ikyo, B. A., Marko, I. P., Hild, K., Adams, A. R., Arafin, S., Amann, M.-C. and Sweeney, S. J. (2013) The effect of hole leakage and auger recombination on the temperature sensitivity of GaInAsSb/GaSb mid-infrared lasers. In: 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC, Munich, Germany, 12-16 May 2013, ISBN 9781479905942 (doi: 10.1109/cleoe-iqec.2013.6800690)

Aldukhayel, A., Jin, S.R., Marko, I.P., Zhang, S.Y., Revin, D.G., Cockburn, J.W. and Sweeney, S.J. (2013) Investigations of carrier scattering into L-valley in λ=3.5μm InGaAs/AlAs(Sb) quantum cascade lasers using high hydrostatic pressure. Physica Status Solidi B: Basic Solid State Physics, 250(4), pp. 693-697. (doi: 10.1002/pssb.201200848)

Crutchley, B.G., Marko, I.P., Pal, J., Migliorato, M.A. and Sweeney, S.J. (2013) Optical properties of InGaN-based LEDs investigated using high hydrostatic pressure dependent techniques. Physica Status Solidi B: Basic Solid State Physics, 250(4), pp. 698-702. (doi: 10.1002/pssb.201200514)

Lock, D. A., Hall, S. R. G., Prins, A.D., Crutchley, B.G., Kynaston, S. and Sweeney, S. J. (2013) LED junction temperature measurement using generated photocurrent. Journal of Display Technology, 9(5), pp. 396-401. (doi: 10.1109/JDT.2013.2251607)

Usman, M., Broderick, C. A., Batool, Z., Hild, K., Hosea, T. J. C., Sweeney, S. J. and O'Reilly, E. P. (2013) Impact of alloy disorder on the band structure of compressively strained GaBixAs1-x. Physical Review B, 87(11), 115104. (doi: 10.1103/PhysRevB.87.115104)

Hossain, N., Hild, K., Jin, S.R., Yu, S.-Q., Johnson, S.R., Ding, D., Zhang, Y.-H. and Sweeney, S.J. (2013) The influence of growth conditions on carrier recombination mechanisms in 1.3 μm GaAsSb/GaAs quantum well lasers. Applied Physics Letters, 102(4), 041106. (doi: 10.1063/1.4789859)

Sweeney, S.J. and Jin, S.R. (2013) Bismide-nitride alloys: promising for efficient light emitting devices in the near- and mid-infrared. Journal of Applied Physics, 113(4), 043110. (doi: doi10.1063/1.4789624)

Batool, Z. et al. (2013) Bismuth-containing III-V semiconductors: epitaxial growth and physical properties. In: Henini, M. (ed.) Molecular Beam Epitaxy: From Research to Mass Production. Elsevier: Amsterdam, pp. 139-158. ISBN 9780123878397 (doi: 10.1016/B978-0-12-387839-7.00007-5)

2012

Hunter, C.J., Bastiman, F., Mohmad, A.R., Richards, R., Ng, J.S., Sweeney, S.J. and David, J.P.R. (2012) Absorption characteristics of GaAs1-xBix/GaAs diodes in the near-infrared. IEEE Photonics Technology Letters, 24(23), pp. 2191-2194. (doi: 10.1109/LPT.2012.2225420)

Marko, I.P. et al. (2012) Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications. Applied Physics Letters, 101(22), 221108. (doi: 10.1063/1.4768532)

Mohmad, A.R., Bastiman, F., Ng, J.S., Sweeney, S.J. and David, J.P.R. (2012) Room temperature photoluminescence intensity enhancement in GaAs1-xBix alloys. Physica Status Solidi C, 9(2), pp. 259-261. (doi: 10.1002/pssc.201100256)

Reed, G.T. et al. (2012) High performance silicon optical modulators. In: Photonics Asia 2012: Nanophotonics and Micro/Nano Optics, Beijing, China, 5-7 Nov 2012, ISBN 9780819493194 (doi: 10.1117/12.2001296)

Hosea, T.J.C. et al. (2012) InGaBiAs/InP Semiconductors for Mid-infrared Applications: Dependence of Bandgap and Spin-orbit Splitting on Temperature and Bismuth Content. In: 2012 IEEE 3rd International Conference on Photonics, Pulau Pinang, Malaysia, 1-3 Oct 2012, pp. 154-158. ISBN 9781467314633 (doi: 10.1109/ICP.2012.6379872)

Tan, S.L. et al. (2012) Improved optoelectronic properties of rapid thermally annealed dilute nitride GaInNAs photodetectors. Journal of Electronic Materials, 41(12), pp. 3393-3401. (doi: 10.1007/s11664-012-2245-9)

Sweeney, S. J. (2012) Bismide alloys for photonic devices: potential and progress. In: IEEE Photonics Conference 2012, Burlingame, CA, USA, 23-27 Sep 2012, pp. 602-603. ISBN 9781457707315 (doi: 10.1109/IPCon.2012.6358765)

Broderick, C.A., Usman, M., Sweeney, S.J. and O'Reilly, E.P. (2012) Band engineering in dilute nitride and bismide semiconductor lasers. Semiconductor Science and Technology, 27(9), 094011. (doi: 10.1088/0268-1242/27/9/094011)

Blume, G., Hild, K., Marko, I.P., Hosea, T.J.C., Yu, S.-Q., Chaparro, S.A., Samal, N., Johnson, S.R., Zhang, Y.-H. and Sweeney, S.J. (2012) Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements. Journal of Applied Physics, 112(3), 033108. (doi: 10.1063/1.4744985)

Mohmad, A.R., Bastiman, F., Hunter, C.J., Richards, R., Sweeney, S.J. , Ng, J.S. and David, J.P.R. (2012) Effects of rapid thermal annealing on GaAs1-xBix alloys. Applied Physics Letters, 101(1), 012106. (doi: 10.1063/1.4731784)

Hossain, N., Jin, S.R., Liebich, S., Zimprich, M., Volz, K., Kunert, B., Stolz, W. and Sweeney, S.J. (2012) Efficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers. Applied Physics Letters, 101(1), 011107. (doi: 10.1063/1.4733312)

Batool, Z., Hild, K., Hosea, T.J.C., Lu, X., Tiedje, T. and Sweeney, S.J. (2012) The electronic band structure of GaBiAs/GaAs layers: influence of strain and band anti-crossing. Journal of Applied Physics, 111(11), 113108. (doi: 10.1063/1.4728028)

Buaprathoom, S., Pedley, S., Prins, A.D. and Sweeney, S.J. (2012) High Concentration Measurement of Mixed Particle Suspensions Using Simple Multi-angle Light Scattering System. In: SPIE Photonics Europe 2012, Brussels, Belgium, 16-19 Apr 2012, ISBN 9780819491312 (doi: 10.1117/12.922287)

Buaprathoom, S., Pedley, S. and Sweeney, S.J. (2012) Dual Wavelength Multiple-angle Light Scattering System for Cryptosporidium Detection. In: SPIE Photonics Europe 2012, Brussels, Belgium, 16-19 Apr 2012, ISBN 9780819491190 (doi: 10.1117/12.921661)

Bastiman, F., Cullis, A.G., David, J.P.R. and Sweeney, S.J. (2012) Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED and STM. Journal of Crystal Growth, 341(1), pp. 19-23. (doi: 10.1016/j.jcrysgro.2011.12.058)

Hossain, N., Marko, I.P., Jin, S.R., Hild, K., Sweeney, S.J. , Lewis, R.B., Beaton, D.A. and Tiedje, T. (2012) Recombination mechanisms and band alignment of GaAs1-xBi x/GaAs light emitting diodes. Applied Physics Letters, 100(5), 051105. (doi: 10.1063/1.3681139)

Bastiman, F., Mohmad, A.R.B., Ng, J.S., David, J.P.R. and Sweeney, S.J. (2012) Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth. Journal of Crystal Growth, 338(1), pp. 57-61. (doi: 10.1016/j.jcrysgro.2011.07.036)

Sweeney, S. J. , Zhang, Y. and Goodyer, I. D. (2012) The development of a novel monolithic spectrometer chip concept. In: SPIE OPTO 2012: Integrated Optics: Devices, Materials, and Technologies XVI, San Francisco, California, USA, 25-26 Jan 2012, ISBN 9780819489074 (doi: 10.1117/12.907118)

2011

Lever, L. et al. (2011) Modulation of the absorption coefficient at 1:3μm in Ge/SiGe multiple quantum well heterostructures on silicon. Optics Letters, 36(21), pp. 4158-4160. (doi: 10.1364/OL.36.004158) (PMID:22048350)

Cheetham, K.J., Krier, A., Marko, I.P., Aldukhayel, A. and Sweeney, S.J. (2011) Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes. Applied Physics Letters, 99(14), 141110. (doi: 10.1063/1.3646910)

Hossain, N., Hosea, T.J.C., Sweeney, S. J. , Liebich, S., Zimprich, M., Volz, K., Kunert, B. and Stolz, W. (2011) Band structure properties of novel BxGa1−xP alloys for silicon integration. Journal of Applied Physics, 110(6), 063101. (doi: 10.1063/1.3630018)

Hossain, N., Jin, S.R., Sweeney, S.J. , Liebich, S., Ludewig, P., Zimprich, M., Volz, K., Kunert, B. and Stolz, W. (2011) Physical Properties of Monolithically Integrated Ga(NAsP)/(BGa)P QW Lasers on Silicon. In: IEEE International Conference on Group IV Photonics, GFP 2011, London, UK, 14-16 Sep 2011, pp. 148-150. ISBN 9781424483389 (doi: 10.1109/GROUP4.2011.6053745)

Lever, L. et al. (2011) Strain Engineering of the Electroabsorption Response in Ge/SiGe Multiple Quantum Well Heterostructures. In: 8th IEEE International Conference on Group IV Photonics, GFP 2011, London, UK, 4-16 Sep 2011, pp. 107-108. ISBN 9781424483389 (doi: 10.1109/GROUP4.2011.6053731)

Ongrai, O., Pearce, J.V., MacHin, G. and Sweeney, S.J. (2011) A miniature high-temperature fixed point for self-validation of type C thermocouples. Measurement Science and Technology, 22(10), 105103. (doi: 10.1088/0957-0233/22/10/105103)

Liebich, S. et al. (2011) Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate. Applied Physics Letters, 99(7), 071109. (doi: 10.1063/1.3624927)

Hild, K., Marko, I.P., Johnson, S.R., Yu, S.-Q., Zhang, Y.-H. and Sweeney, S.J. (2011) Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 μm GaAsSb/GaAs vertical cavity surface emitting lasers. Applied Physics Letters, 99(7), 071110. (doi: 10.1063/1.3625938)

Hossain, N., Sweeney, S.P. , Rogowsky, S., Ostendorf, R., Wagner, J., Liebich, S., Zimprich, M., Volz, K., Kunert, B. and Stolz, W. (2011) Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE. Electronics Letters, 47(16), pp. 931-933. (doi: 10.1049/el.2011.1927)

Mohmad, A.R., Bastiman, F., Hunter, C.J., Ng, J.S., Sweeney, S.J. and David, J.P.R. (2011) The effect of Bi composition to the optical quality of GaAs1−xBix. Applied Physics Letters, 99(4), 042107. (doi: 10.1063/1.3617461)

Ikyo, B.A., Marko, I.P., Adams, A.R., Sweeney, S.J. , Canedy, C.L., Vurgaftman, I., Kim, C.S., Kim, M., Bewley, W.W. and Meyer, J.R. (2011) Temperature dependence of 4.1 μm mid-infrared type II "w" interband cascade lasers. Applied Physics Letters, 99(2), 021102. (doi: 10.1063/1.3606533)

Tan, S. L. et al. (2011) GaInNAsSb/GaAs photodiodes for long-wavelength applications. IEEE Electron Device Letters, 32(7), pp. 919-921. (doi: 10.1109/LED.2011.2145351)

Kunert, B., Liebich, S., Zimprich, M., Beyer, A., Ziegler, S., Volz, K., Stolz, W., Hossain, N., Jin, S.R. and Sweeney, S.J. (2011) Electrical Pumped Integrated III/V Laser Lattice-matched to a Silicon Substrate. In: 69th Device Research Conference, DRC 2011, Santa Barbara, California, USA, 20-22 Jun 2011, pp. 257-258. ISBN 9781612842417 (doi: 10.1109/DRC.2011.5994521)

Sweeney, S. (2011) Editorial: Selected papers from the Semiconductor and Integrated Optoelectronics (SIOE'10) Conference. IET Optoelectronics, 5(3), p. 99. (doi: 10.1049/iet-opt.2011.9057)

Sweeney, S.J. , Batool, Z., Hild, K., Jin, S.R. and Hosea, T.J.C. (2011) The Potential Role of Bismide Alloys in Future Photonic Devices. In: 2011 13th International Conference on Transparent Optical Networks, Stockholm, Sweden, 26-30 Jun 2011, ISBN 9781457708800 (doi: 10.1109/ICTON.2011.5970829)

Mohmad, A.R., Bastiman, F., Ng, J.S., Sweeney, S.J. and David, J.P.R. (2011) Photoluminescence investigation of high quality GaAs1−xBix on GaAs. Applied Physics Letters, 98(12), 122107. (doi: 10.1063/1.3565244)

2010

Ongrai, O., Pearce, J.V., Machin, G. and Sweeney, S.J. (2010) Miniature Co-C eutectic fixed-point cells for self-validating thermocouples. Measurement Science and Technology, 22(1), 015104. (doi: 10.1088/0957-0233/22/1/015104)

Hossain, N., Chamings, J., Jin, S.R., Sweeney, .J. , Liebich, S., Reinhard, S., Volz, K., Kunert, B. and Stolz, W. (2010) Recombination and Loss Mechanisms in GaNAsP/GaP QW Lasers. In: 2010 Photonics Global Conference, Orchard, Singapore, 14-16 Dec 2010, ISBN 9781424498819 (doi: 10.1109/PGC.2010.5706060)

Hossain, N., Hild, K., Jin, S.R., Sweeney, S.J. , Yu, S.-Q., Johnson, S.R., Ding, D. and Zhang, Y.-H. (2010) Influence Of Device Structures on Carrier Recombination in GaAsSb/GaAs QW Lasers. In: 2010 Photonics Global Conference, Orchard, Singapore, 14-16 Dec 2010, ISBN 9781424498819 (doi: 10.1109/PGC.2010.5706061)

Hossain, N., Hild, K., Jin, S., Sweeney, S. J. , Yu, S.-Q., Johnson, S. R., Ding, D. and Zhang, Y.-H. (2010) Role of Growth Temperature on the Physical Characteristics of GaAsSb/GaAs QW Lasers. In: 2010 23rd Annual Meeting of the IEEE Photonics Society, Denver, Colorado, USA, 7-11 Nov 2010, pp. 59-60. ISBN 97814244-53689 (doi: 10.1109/PHOTONICS.2010.5698756)

Hossain, N., Jin, S. R., Sweeney, S. J. , Liebich, S., Reinhard, S., Volz, K., Kunert, B. and Stolz, W. (2010) Physical Properties of Ga(NAsP)/GaP QW Lasers Grown by MOVPE. In: 2010 23rd Annual Meeting of the IEEE Photonics Society, Denver, CO, USA, 7-11 Nov2010, pp. 65-66. ISBN 9781424453689 (doi: 10.1109/PHOTONICS.2010.5698759)

Sayid, S. A., Marko, I. P., Sweeney, S. J. , Barrios, P. and Poole, P. J. (2010) Efficiency limiting processes in 1.55 μm InAs/InP-based quantum dots lasers. Applied Physics Letters, 97(16), 161104. (doi: 10.1063/1.3504253)

Hossain, N., Jin, S. R., Sweeney, S. J. , Liebich, S., Ludewig, P., Zimprich, M., Kunert, B., Volz, K. and Stolz, W. (2010) On the Temperature Dependence of Monolithically Integrated Ga(NAsP)/(BGa)P/Si QW Lasers. In: Frontiers in Optics 2010/Laser Science XXVI, Rochester, NY, USA, 24–28 Oct 2010, (doi: 10.1364/FIO.2010.FWD6)

Crutchley, B. G., Marko, I. P., Adams, A. R. and Sweeney, S. J. (2010) Efficiency Limitations of Green InGaN LEDs and Laser Diodes. In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010, pp. 27-28. ISBN 9781424456840 (doi: 10.1109/ISLC.2010.5642770)

Hossain, N., Jin, S. R., Sweeney, S. J. , Liebich, S., Ludewig, P., Zimprich, M., Kunert, B., Volz, K. and Stolz, W. (2010) Lasing Properties of Monolithically Integrated Ga(NAsP)/(BGa)P QW Lasers on a Silicon Substrate Grown by MOVPE. In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010, pp. 109-110. ISBN 9781424456840 (doi: 10.1109/ISLC.2010.5642727)

Ikyo, B. A., Marko, I. P., Adams, A. R., Sweeney, S. J. , Canedy, C. L., Vurgaftman, I., Kim, C. S., Kim, M., Bewley, W. W. and Meyer, J. R. (2010) Temperature Sensitivity of Mid-infrared Type II "W" Interband Cascade Lasers (ICL) Emitting at 4.1μm at Room Temperature. In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010, pp. 41-42. ISBN 9781424456840 (doi: 10.1109/ISLC.2010.5642761)

Liebich, S., Zimprich, M., Ludewig, P., Beyer, A., Volz, K., Stolz, W., Kunert, B., Hossain, N., Jin, S.R. and Sweeney, S.J. (2010) MOVPE Growth and Characterization of Ga(NAsP) Laser Structures Monolithically Integrated on Si (001) Substrates. In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010, pp. 143-144. ISBN 9781424456840 (doi: 10.1109/ISLC.2010.5642712)

Marko, I.P., Aldukhayel, A.M., Adams, A.R., Sweeney, S.J. , Teissier, R., Baranov, A.N. and Tomić, S. (2010) Physical Properties of Short Wavelength 2.6μm InAs/AlSb-based Quantum Cascade Lasers. In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010, pp. 95-96. ISBN 9781424456840 (doi: 10.1109/ISLC.2010.5642736)

Sayid, S. A., Marko, I. P., Adams, A. R., Sweeney, S. J. , Barrios, P. and Poole, P. (2010) Thermal Behavior of 1.55 μm (100) InAs/InP-based Quantum Dot Lasers. In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010, pp. 75-76. ISBN 9781424456840 (doi: 10.1109/ISLC.2010.5642746)

Sweeney, S. J. (2010) Bismide-alloys For Higher Efficiency Infrared Semiconductor Lasers. In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010, pp. 111-112. ISBN 9781424456840 (doi: 10.1109/ISLC.2010.5642728)

Ongrai, O., Pearce, J.V., Machin, G. and Sweeney, S.J. (2010) Comparative study of Pt/Pd and Pt-Rh/Pt thermocouples. International Journal of Thermophysics, 31(8-9), pp. 1506-1516. (doi: 10.1007/s10765-010-0782-0)

Tan, S.L., Tan, L.J.J., Goh, Y.L., Zhang, S., Ng, J.S., David, J.P.R., Marko, I.P., Allam, J., Sweeney, S.J. and Adams, A.R. (2010) Reduction of Dark Current and Unintentional Background Doping in InGaAsN Photodetectors by Ex Situ Annealing. In: SPIE Optical Sensing and Detection 2010, Brussels, Belgium, 12-15 Apr 2010, ISBN 9780819481993 (doi: 10.1117/12.853912)

Sayid, S. A., Marko, I. P., Cannard, P. J., Chen, X., Rivers, L. J., Lealman, I. F. and Sweeney, S. J. (2010) Thermal Characteristics of 1.55 μm InGaAlAs Quantum Well Buried Heterostructure Lasers. IEEE Journal of Quantum Electronics, 46(5), pp. 700-705. (doi: 10.1109/JQE.2009.2039117)

Pearce, J.V., Ongrai, O., MacHin, G. and Sweeney, S.J. (2010) Self-validating thermocouples based on high temperature fixed points. Metrologia, 47(1), L1-L3. (doi: 10.1088/0026-1394/47/1/L01)

Hossain, N., Jin, S.R., Sweeney, S.J. , Yu, S.-Q., Johnson, S.R., Ding, D. and Zhang, Y.-H. (2010) Improved Performance of GaAsSb/GaAs SQW Lasers. In: SPIE OPTO, 2010, San Francisco, California USA, 25-28 Jan 2010, ISBN 9780819480125 (doi: 10.1117/12.842253)

Ng, J.S., Tan, S.L., Goh, Y.L., Tan, C.H., David, J.P.R., Allam, J., Sweeney, S.J. and Adams, A.R. (2010) InGaAsN as Absorber in APDs for 1.3 Micron Wavelength Applications. In: 22nd International Conference on Indium Phosphide and Related Materials (IPRM), Takamatsu, Japan, 31 May-4 Jun 2010, pp. 187-190. ISBN 9781424459223 (doi: 10.1109/ICIPRM.2010.5516060)

Sayid, S. A., Marko, I. P., Sweeney, S. J. and Poole, P. (2010) Temperature Sensitivity of 1.55μm (100) InAs/InP-based Quantum Dot Lasers. In: 22nd International Conference on Indium Phosphide and Related Materials (IPRM), Takamatsu, Japan, 31 May-4 Jun 2010, pp. 23-24. ISBN 9781424459223 (doi: 10.1109/ICIPRM.2010.5516172)

Sayid, S. A., Marko, I. P., Cannard, P. J., Chen, X., Rivers, L. J., Lealman, I. F. and Sweeney, S. J. (2010) Thermal Performance of 1.55μm InGaAlAs Quantum Well Buried Heterostructure Lasers. In: 22nd International Conference on Indium Phosphide and Related Materials (IPRM), Takamatsu, Japan, 31 May-4 Jun 2010, pp. 265-268. ISBN 9781424459223 (doi: 10.1109/ICIPRM.2010.5516088)

2009

Ikyo, A.B., Marko, I.P., Adams, A.R., Sweeney, S.J. , Bachmann, A., Kashani-Shirazi, K. and Amann, M.-C. (2009) Gain peak-cavity mode alignment optimisation in buried tunnel junction mid-infrared GaSb vertical cavity surface emitting lasers using hydrostatic pressure. IET Optoelectronics, 3(6), pp. 305-309. (doi: 10.1049/iet-opt.2009.0045)

Tan, L.J.J. et al. (2009) Dark current mechanisms in InxGa1-xAs1-yNy. In: 2009 IEEE LEOS Annual Meeting Conference Proceedings, Belek-Antalya, Turkey, 4-8 Oct 2009, pp. 233-234. ISBN 9781424436804 (doi: 10.1109/LEOS.2009.5343290)

Marko, I.P., Ikyo, A.B., Adams, A.R., Sweeney, S.J. , Bachmann, A., Kashani-Shirazi, K. and Amann, M.-C. (2009) Band-structure and gain-cavity tuning of 2.4-μm GaSb buried tunnel junction VCSELs. In: CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, Munich, Germany, 14-19 June 2009, ISBN 9781424440795 (doi: 10.1109/CLEOE-EQEC.2009.5193611)

Crowley, M. T., Marko, I. P., Massé, N. F., Andreev, A. D., Tomic, S., Sweeney, S. J. , O'Reilly, E. P. and Adams, A. R. (2009) The importance of recombination via excited states in inAs/GaAs 1.3μm quantum-dot lasers. IEEE Journal of Selected Topics in Quantum Electronics, 15(3), pp. 799-807. (doi: 10.1109/JSTQE.2009.2015679)

Fox, N. E., Sharma, T. K., Sweeney, S. J. and Hosea, T.J.C. (2009) Room temperature characterisation of InGaAlAs quantum well laser structures using electro-modulated reflectance and surface photovoltage spectroscopy. Physica Status Solidi A: Applications and Materials Science, 206(5), pp. 796-802. (doi: 10.1002/pssa.200881407)

Chamings, J., Ahmed, S., Adams, A. R., Sweeney, S. J. , Odnoblyudov, V. A., Tu, C. W., Kunert, B. and Stolz, W. (2009) Band anti-crossing and carrier recombination in dilute nitride phosphide based lasers and light emitting diodes. Physica Status Solidi B: Basic Solid State Physics, 246(3), pp. 527-531. (doi: 10.1002/pssb.200880537)

Marko, I. P., Adams, A. R., Sweeney, S. J. , Teissier, R., Baranov, A. N. and Tomić, S. (2009) Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressure. Physica Status Solidi B: Basic Solid State Physics, 246(3), pp. 512-515. (doi: 10.1002/pssb.200880501)

Adams, A.R., Marko, I.P., Sweeney, S.J. , Teissier, R., Baranov, A.N. and Tomić, S. (2009) The Effect of Hydrostatic Pressure on the Operation of Quantum Cascade Lasers. In: SPIE Quantum Cascade Lasers and Applications I, San Jose, USA, 25-28 Jan 2009, (doi: 10.1117/12.814322)

Coote, J., Reddy, S. and Sweeney, S.J. (2009) The development of a compact free spectral range semiconductor laser biosensor. Journal of the European Optical Society, 4, 09013. (doi: 10.2971/jeos.2009.09013)

Massé, N.F., Marko, I.P., Adams, A.R. and Sweeney, S.J. (2009) Temperature insensitive quantum dot lasers: Are we really there yet? Journal of Materials Science: Materials in Electronics, 20(SUPPL.), pp. 272-276. (doi: 10.1007/s10854-008-9574-8)

Sweeney, S. J. and Krause, S. (2009) Editorial: Selected papers from the second international conference on optical, optoelectronic and photonic materials and applications, 2007. Journal of Materials Science: Materials in Electronics, 20(1-2), s1-s2. (doi: 10.1007/s10854-008-9740-z)

2008

Sharma, T.K., Hosea, T.J.C., Sweeney, S.J. and Tang, X. (2008) An accurate determination of the electronic transitions of InAs/InGaAs/InP quantum dots for midinfrared lasers using simultaneous complementary spectroscopic techniques. Journal of Applied Physics, 104(8), 083109. (doi: 10.1063/1.3005903)

Chamings, J., Adams, A.R., Sweeney, S.J. , Kunert, B., Volz, K. and Stolz, W. (2008) Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers. Applied Physics Letters, 93(10), 101108. (doi: 10.1063/1.2975845)

Chamings, J., Adams, A.R., Sweeney, S.J. , Kunert, B., Volz, K. and Stolz, W. (2008) Thermal properties of Silicon compatible GaNAsP SQW lasers. In: 2008 IEEE 21st International Semiconductor Laser Conference, Sorrento, Italy, 14-18 Sep 2008, pp. 61-62. ISBN 9781424417827 (doi: 10.1109/ISLC.2008.4636009)

Crowley, M.T., Marko, I.P., Masse, N.F., Andreev, A.D., Sweeney, S.J. , O'Reilly, E.P. and Adams, A.R. (2008) The importance of recombination via excited states in InAs/GaAs 1.3μm quantum dot lasers. In: 2008 IEEE 21st International Semiconductor Laser Conference, Sorrento, Italy, 14-18 Sep 2008, pp. 117-118. ISBN 9781424417827 (doi: 10.1109/ISLC.2008.4636037)

Marko, I.P., Adams, A.R., Sweeney, S.J. , Teissier, R., Baranov, A.N. and Tomic, S. (2008) Gamma-L scattering in InAs-based quantum cascade lasers studied using high hydrostatic pressure. In: 2008 IEEE 21st International Semiconductor Laser Conference, Sorrento, Italy, 14-18 Sep 2008, pp. 47-48. ISBN 9781424417827 (doi: 10.1109/ISLC.2008.4636002)

Sweeney, S.J. , Hild, K., Marko, I.P., Yu, S.-Q., Johnson, S.R. and Zhang, Y.-H. (2008) Thermal characteristics of 1.3μm GaAsSb/GaAs-based edge- and surface-emitting lasers. In: 2008 IEEE 21st International Semiconductor Laser Conference, Sorrento, Italy, 14-18 Sep 2008, pp. 83-84. ISBN 9781424417827 (doi: 10.1109/ISLC.2008.4636020)

Green, B.C., Yu, S.-Q., Sweeney, S.J. , Ding, D. and Zhang, Y.-H. (2008) Novel heterostructure design for increased spectral width of superluminescent diodes and dual-wavelength laser diodes. In: 2008 Device Research Conference, Santa Barbara, California, USA, 23-25 Jun 2008, pp. 309-310. ISBN 9781424419425 (doi: 10.1109/DRC.2008.4800853)

Tu, C.W., Odnoblyudov, V.A., Chamings, J., Ahmed, S., Sweeney, S.J. and Keogh, D.M. (2008) Materials and light-emitting diode properties of dilute-nitride GaNP/GaP heterostructures. In: 2008 Device Research Conference, Santa Barbara, California, USA, 23-25 Jun 2008, pp. 299-300. ISBN 9781424419425 (doi: 10.1109/DRC.2008.4800848)

Lealman, I., Dosanjh, S., Rivers, L., O'Brien, S., Cannard, P., Sweeney, S.J. , Marko, I.P. and Rushworth, S. (2008) Reliable 1550nm SI BH lasers fabricated using an improved Ru precursor. In: 20th International Conference on Indium Phosphide and Related Materials, Versailles, France, 25-29 May 2008, ISBN 9781424422586 (doi: 10.1109/ICIPRM.2008.4702913)

Soong, W.M., Ng, J.S., Steer, M.J., Hopkinson, M., David, J.P.R., Chamings, J., Sweeney, S.J. , Adams, A.R. and Allam, J. (2008) Dark current mechanisms in bulk GaInNAs photodiodes. In: 20th International Conference on Indium Phosphide and Related Materials, Versailles, France, 25-29 May 2008, ISBN 9781424422586 (doi: 10.1109/ICIPRM.2008.4702987)

Chamings, J., Ahmed, S., Sweeney, S.J. , Odnoblyudov, V.A. and Tu, C.W. (2008) Physical properties and efficiency of GaNP light emitting diodes. Applied Physics Letters, 92(2), 021101. (doi: 10.1063/1.2830696)

2007

Coote, J., Reddy, S. and Sweeney, S.J. (2007) Optimisation of distributed feedback laser biosensors. IET Optoelectronics, 1(6), pp. 266-271. (doi: 10.1049/iet-opt:20070053)

Marko, I.P., Adams, A.R., Sweeney, S.J. , Whitbread, N.D., Ward, A.J., Asplin, B. and Robbins, D.J. (2007) The influence of carrier density non-pinning on the output power of 1.55 μm lasers at high temperature. In: 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference, Munich, Germany, 17-22 Jun 2007, ISBN 9781424409303 (doi: 10.1109/CLEOE-IQEC.2007.4385984)

Bückers, C. et al. (2007) Microscopic electroabsorption line shape analysis for Ga (AsSb) / GaAs heterostructures. Journal of Applied Physics, 101(3), 033118. (doi: 10.1063/1.2433715)

Hild, K., Sweeney, S.J. , Marko, I.P., Jin, S.R., Johnson, S.R., Chaparro, S.A., Yu, S. and Zhang, Y.-H. (2007) Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers. Physica Status Solidi B: Basic Solid State Physics, 244(1), pp. 197-202. (doi: 10.1002/pssb.200672571)

Marko, I.P. et al. (2007) Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure. Physica Status Solidi B: Basic Solid State Physics, 244(1), pp. 82-86. (doi: 10.1002/pssb.200672544)

Coote, J. and Sweeney, S.J. (2007) Semiconductor lasers as integrated optical biosensors: Sensitivity optimisation. Journal of Physics: Conference Series, 76(1), 012046. (doi: 10.1088/1742-6596/76/1/012046)

2006

Hild, K., Sweeney, .J. , Jin, S.R., Healy, S.B., O'Reilly, E.P., Johnson, S.R., Wang, J.-B. and Zhang, Y.-H. (2006) Band alignment and carrier recombination in GaAsSb/GaAs quantum wells. In: 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006, pp. 1431-1432. ISBN 9780735403970 (doi: 10.1063/1.2730443)

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