2023

Kumar, N. , Dixit, A., Rezaei, A. , Dutta, T. , Pascual García, C. and Georgiev, V. (2023) Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for Memory and Sensing Applications. In: 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), Paestum, Italy, 22-25 October 2023, pp. 617-620. ISBN 9798350335460 (doi: 10.1109/nmdc57951.2023.10343913)

Bhardwaj, A., Kumar, P., Raj, B., Kumar, N. and Anand, S. (2023) Design and optimization of vertical nanowire tunnel FET with electrostatic doping. Engineering Research Express, 5(4), 045025. (doi: 10.1088/2631-8695/acff3a)

Kumar, N. , Pascual García, C., Dixit, A., Rezaei, A. and Georgiev, V. (2023) Charge dynamics of amino acids fingerprints and the effect of density on FinFET-based electrolyte-gated sensor. Solid-State Electronics, 210, 108789. (doi: 10.1016/j.sse.2023.108789)

Gandhi, N., Jaisawal, R. K., Rathore, S., Kondekar, P. N., Dixit, A., Kumar, N. , Georgiev, V. and Bagga, N. (2023) Gate Oxide Induced Reliability Assessment of Junctionless FinFET-Based Hydrogen Gas Sensor. In: 2023 IEEE SENSORS, Vienna, Austria, 29 Oct - 01 Nov 2023, ISBN 9798350303872 (doi: 10.1109/SENSORS56945.2023.10324885)

Kumar, N. , García, C. P., Rezaei, A. , Dixit, A., Asenov, A. and Georgiev, V. (2023) Electrolyte-Gated FET-based Sensing of Immobilized Amphoteric Molecules Including the Variability in Affinity of the Reactive Sites. In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 27-29 September 2023, pp. 377-380. ISBN 9784863488038 (doi: 10.23919/SISPAD57422.2023.10319578)

Kumar, N. , García, C. P., Dixit, A., Rezaei, A. and Georgiev, V. (2023) Novel Detection Methodology of Milk-Oligopeptides Fingerprints using Ion-Sensitive BioFET. In: 2023 IEEE BioSensors Conference (BioSensors), London, UK, 30 July - 1 August 2023, ISBN 9798350346046 (doi: 10.1109/BioSensors58001.2023.10281172)

Mishra, S. , John, D. A., Kumar, N. , Rai, B. and Georgiev, V. (2023) Human-Inspired Stretch and Joint-Bend Sensing System Based on Flexible Sensors. In: IEEE Sensors 2023, Vienna, Austria, 29 Oct - 01 Nov 2023, (Accepted for Publication)

Anam, A., Amin, S. I., Prasad, D., Kumar, N. and Anand, S. (2023) Undoped vertical dual-bilayer TFET with a super-steep sub-threshold swing: proposal and performance comparative analysis. Semiconductor Science and Technology, 38(7), 075005. (doi: 10.1088/1361-6641/ACD2F9)

Singh, S., Solay, L. R., Anand, S., Kumar, N. , Ranjan, R. and Singh, A. (2023) Implementation of gate-all-around gate-engineered charge plasma nanowire FET-based common source amplifier. Micromachines, 14(7), 1357. (doi: 10.3390/mi14071357)

Kumar, N. , Dhar, R. P. S., Pascual Garcia, C. and Georgiev, V. (2023) A novel computational framework for simulations of bio-field effect transistors. ECS Transactions, 111(1), pp. 249-260. (doi: 10.1149/11101.0249ecst)

Dhar, R., Kumar, N. , Garcia, C. P. and Georgiev, V. (2023) Deriving a novel methodology for nano-BioFETs and analysing the effect of high-k oxides on the amino-acids sensing application. Solid-State Electronics, 200, 108525. (doi: 10.1016/j.sse.2022.108525)

Majeed, L., Amin, S. I., Rasool, Z., Bashir, I., Kumar, N. and Anand, S. (2023) TCAD device modeling and simulation study of organic field effect transistor-based pH sensor with tunable sensitivity for surpassing Nernst limit. Electronics, 12(3), 536. (doi: 10.3390/electronics12030536)

Anam, A., Kumar, N. , Amin, S. I., Prasad, D. and Anand, S. (2023) Charge-plasma based symmetrical-gate complementary electron-hole bilayer TFET with improved performance for sub-0.5 V operation. Semiconductor Science and Technology, 38(1), 015012. (doi: 10.1088/1361-6641/ACA7DB)

2022

Bhardwaj, A., Solay, L. R., Kumar, N. , Amin, S. I., Singh, A., Raj, B., Kumar, P. and Anand, S. (2022) Doping-less TFET based common source amplifier implementation and behaviour analysis under symmetric and asymmetric conditions. Silicon, 14(18), pp. 12251-12260. (doi: 10.1007/s12633-022-01921-2)

Raman, A., Chattopadhyay, S. P., Ranjan, R., Kumar, N. , Kakkar, D. and Sharma, R. (2022) Design and investigation of dual dielectric recessed-gate AlGaN/GaN HEMT as gas sensor application. Transactions on Electrical and Electronic Materials, 23, pp. 618-623. (doi: 10.1007/s42341-022-00391-y)

Aliyana, A. K., Ganguly, P., Beniwal, A. , Kumar, S.K. N. and Dahiya, R. (2022) Disposable pH sensor on paper using screen-printed graphene-carbon ink modified zinc oxide nanoparticles. IEEE Sensors Journal, 22(21), pp. 21049-21056. (doi: 10.1109/JSEN.2022.3206212)

Gupta, A. K., Raman, A. and Kumar, N. (2022) Design considerations and optimization of electrostatic doped ferroelectric nanotube tunnel FET: analog and noise analysis. Silicon, 14(16), pp. 10357-10373. (doi: 10.1007/s12633-022-01720-9)

Raj Solay, L., Kumar, N. , Intekhab Amin, S., Kumar, P. and Anand, S. (2022) Design and performance analysis of gate-all-around negative capacitance dopingless nanowire tunnel field effect transistor. Semiconductor Science and Technology, 37(11), 115001. (doi: 10.1088/1361-6641/ac86e9)

Dhar, R., Kumar, N. , Pascual Garcia, C. and Georgiev, V. (2022) Assessing the effect of scaling high-aspect-ratio ISFET with physical model interface for nano-biosensing application. Solid-State Electronics, 195, 108374. (doi: 10.1016/j.sse.2022.108374)

Sachdeva, R., Bhushan, A., Bajaj, A., Gupta, M., Kumar, P., Raman, A., Ranjan, R. and Kumar, N. (2022) Investigation of variation in temperature on steep subthreshold slope nanowire tunnel field effect transistor based biosensor. Engineering Research Express, 4(3), 035030. (doi: 10.1088/2631-8695/ac8640)

Bharadwaj, H., Kumar, N. , Amin, S. I. and Anand, S. (2022) Charge plasma based vertical nanowire tunnel field effect transistor: design and sensitivity analysis for biosensing application. Silicon, 14, pp. 7677-7684. (doi: 10.1007/s12633-021-01512-7)

Shukla, R. P., Bomer, J. G., Wijnperle, D., Kumar, N. , Georgiev, V. P. , Singh, A. C., Krishnamoorthy, S., García, C. P., Pud, S. and Olthuis, W. (2022) Planar junctionless field-effect transistor for detecting biomolecular interactions. Sensors, 22(15), 5783. (doi: 10.3390/s22155783)

Aliyana, A. K., Baburaj, A., Jalajamony, H. M., Kumar S.K., N. , Dahiya, R. and Fernadez, R. E. (2022) Impact of Analyte pH on the Sensitivity of Screen-Printed Flexible Ammonium Sensor. In: 2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS), Vienna, Austria, 10-13 Jul 2022, ISBN 9781665442732 (doi: 10.1109/fleps53764.2022.9781496)

Upadhyay, U., Raman, A., Ranjan, R. and Kumar, N. (2022) Overlapped gate-source/drain H-shaped TFET: proposal, design and linearity analysis. Silicon, 14(11), pp. 6415-6424. (doi: 10.1007/s12633-021-01404-w)

Wighmal, K., Peddi, G., Apoorva, , Kumar, N. , Amin, S. I. and Anand, S. (2022) Gate all around dopingless nanotube TFET biosensor with Si0.5Ge0.5 - based source. Silicon, 14(11), pp. 5951-5959. (doi: 10.1007/s12633-021-01361-4)

Kumar, N. , Dhar, R. P. S., García, C. P. and Georgiev, V. (2022) Discovery of Amino Acid fingerprints transducing their amphoteric signatures by field-effect transistors. ChemRxiv, (doi: 10.26434/chemrxiv-2022-bm062-v2)

Lal, K., Verma, A., Kumar, P., Kumar, N. , Amin, S. I. and Anand, S. (2022) Design and performance enhancement of gate-on-source PNPN doping–less vertical nanowire TFET. Silicon, 14, pp. 4375-4382. (doi: 10.1007/s12633-021-01222-0)

Gupta, A. K., Raman, A., Kumar, N. , Shekhar, D. and Kumar, P. (2022) Design and analysis of dopingless charge-plasma-based ring architecture of tunnel field-effect transistor for low-power application. In: Raman, A., Shekhar, D. and Kumar, N. (eds.) Sub-Micron Semiconductor Devices: Design and Applications. CRC Press: Boca Raton. ISBN 9780367648091 (doi: 10.1201/9781003126393-15)

Kumar, P., Gupta, M., Singh, K., Gupta, A. K. and Kumar, N. (2022) Design and analysis of transition metal dichalcogenide-based feedback transistor. In: Raman, A., Shekhar, D. and Kumar, N. (eds.) Sub-Micron Semiconductor Devices: Design and Applications. CRC Press: Boca Raton, pp. 309-318. ISBN 9781003126393 (doi: 10.1201/9781003126393-19)

Okte, L., Raman, A., Raj, B. and Kumar, N. (2022) Junctionless silicon nanotube tunnel field effect transistor based resistive temperature detector. Silicon, 14, pp. 3281-3291. (doi: 10.1007/s12633-021-01102-7)

Shoaib, M., Amin, S. I., Kumar, N. , Anand, S., Chunn, A. and Alam, M. S. (2022) Device and circuit level assessment of negative capacitance TFETs for low-power high-performance digital circuits. ECS Journal of Solid State Science and Technology, 11(5), 053011. (doi: 10.1149/2162-8777/ac6d76)

Kumar, P., Gupta, M., Singh, K. and Kumar, N. (2022) Linearity analysis of MoTe2-FET based single transistor AND gate using Non-equilibrium Green's function. Transactions on Electrical and Electronic Materials, 23(2), pp. 164-170. (doi: 10.1007/s42341-021-00336-x)

Alam, S., Raman, A., Raj, B., Kumar, N. and Singh, S. (2022) Design and analysis of gate overlapped/underlapped NWFET based lable free biosensor. Silicon, 14(3), pp. 989-996. (doi: 10.1007/s12633-020-00880-w)

Singh, S., Singh, S., Kumar, N. , Singh, N. K., Ranjan, R. and Anand, S. (2022) Lead zirconium titanate (PZT)-based gate-all-around negative-capacitance junctionless nanowire FET for distortionless low-power applications. Journal of Electronic Materials, 51(1), pp. 196-206. (doi: 10.1007/s11664-021-09277-w)

2021

Dhar, R. P. S., Kumar, N. , Medina-Bailon, C., Garcia, C. P. and Georgiev, V. P. (2021) TCAD Simulations of High-Aspect-Ratio Nano-biosensor for Label-Free Sensing Application. In: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Caen, France, 1-3 Sep 2021, ISBN 9781665437455 (doi: 10.1109/EuroSOI-ULIS53016.2021.9560701)

Apoorva, , Kumar, N. , Intekhab Amin, S. and Anand, S. (2021) Design and investigation of negative capacitance–based core‐shell dopingless nanotube tunnel field‐effect transistor. IET Circuits, Devices and Systems, 15(7), pp. 686-694. (doi: 10.1049/cds2.12064)

singh, A., Sajad, M., Singh, A., Kumar, N. , Amin, S. I. and Anand, S. (2021) Design and analysis of negative capacitance based dual material dopingless tunnel FET. Superlattices and Microstructures, 156, 106964. (doi: 10.1016/j.spmi.2021.106964)

Medina-Bailon, C., Kumar, N. , Dhar, R. P. S., Todorova, I., Lenoble, D., Georgiev, V. P. and Pascual García, C. (2021) Comprehensive analytical modelling of an absolute pH sensor. Sensors, 21(15), 5190. (doi: 10.3390/s21155190)

Kumar, P., Gupta, M., Singh, K. and Kumar, N. (2021) Back-gated MoTe2 based 1T-AND gate using non-equilibrium Green's function: design and investigation. Journal of Electronic Materials, 50, pp. 3422-3428. (doi: 10.1007/S11664-021-08820-Z)

Singh, J., Chakraborty, D. and Kumar, N. (2021) Design and parametric variation assessment of dopingless nanotube field-effect transistor (DL-NT-FET) for high performance. Silicon, 14(8), pp. 4097-4105. (doi: 10.1007/s12633-021-01182-5)

Raman, A., Chaturvedi, C. and Kumar, N. (2021) Multi‐quantum well‐based solar cell. In: Tripathi, S. L., Alvi, P. A. and Subramaniam, U. (eds.) Electrical and Electronic Devices, Circuits, and Materials. Wiley, pp. 351-372. ISBN 9781119750369 (doi: 10.1002/9781119755104.ch19)

Dutta, T. , Medina Bailon, C., Rezaei, A. , Nagy, D. , Adamu-Lema, F., Xeni, N., Abourrig, Y., Kumar, N. , Georgiev, V. and Asenov, A. (2021) TCAD Simulation of Novel Semiconductor Devices. In: International Conference on ASIC (ASICON) 2021, Kunming, China, 26-29 October 2021, ISBN 9781665438674 (doi: 10.1109/ASICON52560.2021.9620465)

2020

Prakash Singh, R., Khosla, M., Saini, I. and Kumar, N. (2020) Design and analysis of IGZO based junctionless thin film transistor using SOI technology. Silicon, 13, pp. 2309-2318. (doi: 10.1007/s12633-020-00803-9)

Kumar, K., Raman, A., Raj, B., Singh, S. and Kumar, N. (2020) Design and optimization of junctionless-based devices with noise reduction for ultra-high frequency applications. Applied Physics A: Materials Science and Processing, 126, 913. (doi: 10.1007/s00339-020-04092-2)

Kumar, P., Gupta, M., Singh, K. and Kumar, N. (2020) Design and investigation of split-gate MoTe2-based FET as single transistor AND gate using nonequilibrium Green’s function. IEEE Transactions on Electron Devices, 67(11), pp. 5221-5228. (doi: 10.1109/TED.2020.3025518)

Kumar, N. and Raman, A. (2020) Novel asymmetric recessed-gate/source architecture advancement of dual-metal-date SiGe/Si dopingless nanowire-TFET for low-voltage performance optimization. Silicon, 13, pp. 3141-3151. (doi: 10.1007/s12633-020-00659-z)

2019

Kumar, N. and Raman, A. (2019) Design and analog performance analysis of charge-plasma based cylindrical GAA silicon nanowire tunnel field effect transistor. Silicon, 12(11), pp. 2627-2634. (doi: 10.1007/s12633-019-00355-7)

Kumar Gupta, A., Raman, A. and Kumar, N. (2019) Cylindrical nanowire-TFET with core-shell channel architecture: design and investigation. Silicon, 12(10), pp. 2329-2336. (doi: 10.1007/s12633-019-00331-1)

Mushtaq, U., Kumar, N. , Anand, S. and Amin, I. (2019) Design and performance analysis of core-shell dual metal-dual gate cylindrical GAA silicon nanotube-TFET. Silicon, 12(10), pp. 2355-2363. (doi: 10.1007/s12633-019-00329-9)

Kumar, N. and Raman, A. (2019) Design and investigation of charge-plasma-based work function engineered dual-metal-heterogeneous gate Si-Si0.55Ge0.45 GAA-cylindrical NWTFET for ambipolar analysis. IEEE Transactions on Electron Devices, 66(3), pp. 1468-1474. (doi: 10.1109/TED.2019.2893224)

Jayaswal, N., Raman, A., Kumar, N. and Singh, S. (2019) Design and analysis of electrostatic-charge plasma based dopingless IGZO vertical nanowire FET for ammonia gas sensing. Superlattices and Microstructures, 125, pp. 256-270. (doi: 10.1016/j.spmi.2018.11.009)

Kumar, N. , Mushtaq, U., Intekhab Amin, S. and Anand, S. (2019) Design and performance analysis of Dual-Gate All around Core-Shell Nanotube TFET. Superlattices and Microstructures, 125, pp. 356-364. (doi: 10.1016/j.spmi.2018.09.012)

Articles

Bhardwaj, A., Kumar, P., Raj, B., Kumar, N. and Anand, S. (2023) Design and optimization of vertical nanowire tunnel FET with electrostatic doping. Engineering Research Express, 5(4), 045025. (doi: 10.1088/2631-8695/acff3a)

Kumar, N. , Pascual García, C., Dixit, A., Rezaei, A. and Georgiev, V. (2023) Charge dynamics of amino acids fingerprints and the effect of density on FinFET-based electrolyte-gated sensor. Solid-State Electronics, 210, 108789. (doi: 10.1016/j.sse.2023.108789)

Anam, A., Amin, S. I., Prasad, D., Kumar, N. and Anand, S. (2023) Undoped vertical dual-bilayer TFET with a super-steep sub-threshold swing: proposal and performance comparative analysis. Semiconductor Science and Technology, 38(7), 075005. (doi: 10.1088/1361-6641/ACD2F9)

Singh, S., Solay, L. R., Anand, S., Kumar, N. , Ranjan, R. and Singh, A. (2023) Implementation of gate-all-around gate-engineered charge plasma nanowire FET-based common source amplifier. Micromachines, 14(7), 1357. (doi: 10.3390/mi14071357)

Kumar, N. , Dhar, R. P. S., Pascual Garcia, C. and Georgiev, V. (2023) A novel computational framework for simulations of bio-field effect transistors. ECS Transactions, 111(1), pp. 249-260. (doi: 10.1149/11101.0249ecst)

Dhar, R., Kumar, N. , Garcia, C. P. and Georgiev, V. (2023) Deriving a novel methodology for nano-BioFETs and analysing the effect of high-k oxides on the amino-acids sensing application. Solid-State Electronics, 200, 108525. (doi: 10.1016/j.sse.2022.108525)

Majeed, L., Amin, S. I., Rasool, Z., Bashir, I., Kumar, N. and Anand, S. (2023) TCAD device modeling and simulation study of organic field effect transistor-based pH sensor with tunable sensitivity for surpassing Nernst limit. Electronics, 12(3), 536. (doi: 10.3390/electronics12030536)

Anam, A., Kumar, N. , Amin, S. I., Prasad, D. and Anand, S. (2023) Charge-plasma based symmetrical-gate complementary electron-hole bilayer TFET with improved performance for sub-0.5 V operation. Semiconductor Science and Technology, 38(1), 015012. (doi: 10.1088/1361-6641/ACA7DB)

Bhardwaj, A., Solay, L. R., Kumar, N. , Amin, S. I., Singh, A., Raj, B., Kumar, P. and Anand, S. (2022) Doping-less TFET based common source amplifier implementation and behaviour analysis under symmetric and asymmetric conditions. Silicon, 14(18), pp. 12251-12260. (doi: 10.1007/s12633-022-01921-2)

Raman, A., Chattopadhyay, S. P., Ranjan, R., Kumar, N. , Kakkar, D. and Sharma, R. (2022) Design and investigation of dual dielectric recessed-gate AlGaN/GaN HEMT as gas sensor application. Transactions on Electrical and Electronic Materials, 23, pp. 618-623. (doi: 10.1007/s42341-022-00391-y)

Aliyana, A. K., Ganguly, P., Beniwal, A. , Kumar, S.K. N. and Dahiya, R. (2022) Disposable pH sensor on paper using screen-printed graphene-carbon ink modified zinc oxide nanoparticles. IEEE Sensors Journal, 22(21), pp. 21049-21056. (doi: 10.1109/JSEN.2022.3206212)

Gupta, A. K., Raman, A. and Kumar, N. (2022) Design considerations and optimization of electrostatic doped ferroelectric nanotube tunnel FET: analog and noise analysis. Silicon, 14(16), pp. 10357-10373. (doi: 10.1007/s12633-022-01720-9)

Raj Solay, L., Kumar, N. , Intekhab Amin, S., Kumar, P. and Anand, S. (2022) Design and performance analysis of gate-all-around negative capacitance dopingless nanowire tunnel field effect transistor. Semiconductor Science and Technology, 37(11), 115001. (doi: 10.1088/1361-6641/ac86e9)

Dhar, R., Kumar, N. , Pascual Garcia, C. and Georgiev, V. (2022) Assessing the effect of scaling high-aspect-ratio ISFET with physical model interface for nano-biosensing application. Solid-State Electronics, 195, 108374. (doi: 10.1016/j.sse.2022.108374)

Sachdeva, R., Bhushan, A., Bajaj, A., Gupta, M., Kumar, P., Raman, A., Ranjan, R. and Kumar, N. (2022) Investigation of variation in temperature on steep subthreshold slope nanowire tunnel field effect transistor based biosensor. Engineering Research Express, 4(3), 035030. (doi: 10.1088/2631-8695/ac8640)

Bharadwaj, H., Kumar, N. , Amin, S. I. and Anand, S. (2022) Charge plasma based vertical nanowire tunnel field effect transistor: design and sensitivity analysis for biosensing application. Silicon, 14, pp. 7677-7684. (doi: 10.1007/s12633-021-01512-7)

Shukla, R. P., Bomer, J. G., Wijnperle, D., Kumar, N. , Georgiev, V. P. , Singh, A. C., Krishnamoorthy, S., García, C. P., Pud, S. and Olthuis, W. (2022) Planar junctionless field-effect transistor for detecting biomolecular interactions. Sensors, 22(15), 5783. (doi: 10.3390/s22155783)

Upadhyay, U., Raman, A., Ranjan, R. and Kumar, N. (2022) Overlapped gate-source/drain H-shaped TFET: proposal, design and linearity analysis. Silicon, 14(11), pp. 6415-6424. (doi: 10.1007/s12633-021-01404-w)

Wighmal, K., Peddi, G., Apoorva, , Kumar, N. , Amin, S. I. and Anand, S. (2022) Gate all around dopingless nanotube TFET biosensor with Si0.5Ge0.5 - based source. Silicon, 14(11), pp. 5951-5959. (doi: 10.1007/s12633-021-01361-4)

Kumar, N. , Dhar, R. P. S., García, C. P. and Georgiev, V. (2022) Discovery of Amino Acid fingerprints transducing their amphoteric signatures by field-effect transistors. ChemRxiv, (doi: 10.26434/chemrxiv-2022-bm062-v2)

Lal, K., Verma, A., Kumar, P., Kumar, N. , Amin, S. I. and Anand, S. (2022) Design and performance enhancement of gate-on-source PNPN doping–less vertical nanowire TFET. Silicon, 14, pp. 4375-4382. (doi: 10.1007/s12633-021-01222-0)

Okte, L., Raman, A., Raj, B. and Kumar, N. (2022) Junctionless silicon nanotube tunnel field effect transistor based resistive temperature detector. Silicon, 14, pp. 3281-3291. (doi: 10.1007/s12633-021-01102-7)

Shoaib, M., Amin, S. I., Kumar, N. , Anand, S., Chunn, A. and Alam, M. S. (2022) Device and circuit level assessment of negative capacitance TFETs for low-power high-performance digital circuits. ECS Journal of Solid State Science and Technology, 11(5), 053011. (doi: 10.1149/2162-8777/ac6d76)

Kumar, P., Gupta, M., Singh, K. and Kumar, N. (2022) Linearity analysis of MoTe2-FET based single transistor AND gate using Non-equilibrium Green's function. Transactions on Electrical and Electronic Materials, 23(2), pp. 164-170. (doi: 10.1007/s42341-021-00336-x)

Alam, S., Raman, A., Raj, B., Kumar, N. and Singh, S. (2022) Design and analysis of gate overlapped/underlapped NWFET based lable free biosensor. Silicon, 14(3), pp. 989-996. (doi: 10.1007/s12633-020-00880-w)

Singh, S., Singh, S., Kumar, N. , Singh, N. K., Ranjan, R. and Anand, S. (2022) Lead zirconium titanate (PZT)-based gate-all-around negative-capacitance junctionless nanowire FET for distortionless low-power applications. Journal of Electronic Materials, 51(1), pp. 196-206. (doi: 10.1007/s11664-021-09277-w)

Apoorva, , Kumar, N. , Intekhab Amin, S. and Anand, S. (2021) Design and investigation of negative capacitance–based core‐shell dopingless nanotube tunnel field‐effect transistor. IET Circuits, Devices and Systems, 15(7), pp. 686-694. (doi: 10.1049/cds2.12064)

singh, A., Sajad, M., Singh, A., Kumar, N. , Amin, S. I. and Anand, S. (2021) Design and analysis of negative capacitance based dual material dopingless tunnel FET. Superlattices and Microstructures, 156, 106964. (doi: 10.1016/j.spmi.2021.106964)

Medina-Bailon, C., Kumar, N. , Dhar, R. P. S., Todorova, I., Lenoble, D., Georgiev, V. P. and Pascual García, C. (2021) Comprehensive analytical modelling of an absolute pH sensor. Sensors, 21(15), 5190. (doi: 10.3390/s21155190)

Kumar, P., Gupta, M., Singh, K. and Kumar, N. (2021) Back-gated MoTe2 based 1T-AND gate using non-equilibrium Green's function: design and investigation. Journal of Electronic Materials, 50, pp. 3422-3428. (doi: 10.1007/S11664-021-08820-Z)

Singh, J., Chakraborty, D. and Kumar, N. (2021) Design and parametric variation assessment of dopingless nanotube field-effect transistor (DL-NT-FET) for high performance. Silicon, 14(8), pp. 4097-4105. (doi: 10.1007/s12633-021-01182-5)

Prakash Singh, R., Khosla, M., Saini, I. and Kumar, N. (2020) Design and analysis of IGZO based junctionless thin film transistor using SOI technology. Silicon, 13, pp. 2309-2318. (doi: 10.1007/s12633-020-00803-9)

Kumar, K., Raman, A., Raj, B., Singh, S. and Kumar, N. (2020) Design and optimization of junctionless-based devices with noise reduction for ultra-high frequency applications. Applied Physics A: Materials Science and Processing, 126, 913. (doi: 10.1007/s00339-020-04092-2)

Kumar, P., Gupta, M., Singh, K. and Kumar, N. (2020) Design and investigation of split-gate MoTe2-based FET as single transistor AND gate using nonequilibrium Green’s function. IEEE Transactions on Electron Devices, 67(11), pp. 5221-5228. (doi: 10.1109/TED.2020.3025518)

Kumar, N. and Raman, A. (2020) Novel asymmetric recessed-gate/source architecture advancement of dual-metal-date SiGe/Si dopingless nanowire-TFET for low-voltage performance optimization. Silicon, 13, pp. 3141-3151. (doi: 10.1007/s12633-020-00659-z)

Kumar, N. and Raman, A. (2019) Design and analog performance analysis of charge-plasma based cylindrical GAA silicon nanowire tunnel field effect transistor. Silicon, 12(11), pp. 2627-2634. (doi: 10.1007/s12633-019-00355-7)

Kumar Gupta, A., Raman, A. and Kumar, N. (2019) Cylindrical nanowire-TFET with core-shell channel architecture: design and investigation. Silicon, 12(10), pp. 2329-2336. (doi: 10.1007/s12633-019-00331-1)

Mushtaq, U., Kumar, N. , Anand, S. and Amin, I. (2019) Design and performance analysis of core-shell dual metal-dual gate cylindrical GAA silicon nanotube-TFET. Silicon, 12(10), pp. 2355-2363. (doi: 10.1007/s12633-019-00329-9)

Kumar, N. and Raman, A. (2019) Design and investigation of charge-plasma-based work function engineered dual-metal-heterogeneous gate Si-Si0.55Ge0.45 GAA-cylindrical NWTFET for ambipolar analysis. IEEE Transactions on Electron Devices, 66(3), pp. 1468-1474. (doi: 10.1109/TED.2019.2893224)

Jayaswal, N., Raman, A., Kumar, N. and Singh, S. (2019) Design and analysis of electrostatic-charge plasma based dopingless IGZO vertical nanowire FET for ammonia gas sensing. Superlattices and Microstructures, 125, pp. 256-270. (doi: 10.1016/j.spmi.2018.11.009)

Kumar, N. , Mushtaq, U., Intekhab Amin, S. and Anand, S. (2019) Design and performance analysis of Dual-Gate All around Core-Shell Nanotube TFET. Superlattices and Microstructures, 125, pp. 356-364. (doi: 10.1016/j.spmi.2018.09.012)

Book Sections

Gupta, A. K., Raman, A., Kumar, N. , Shekhar, D. and Kumar, P. (2022) Design and analysis of dopingless charge-plasma-based ring architecture of tunnel field-effect transistor for low-power application. In: Raman, A., Shekhar, D. and Kumar, N. (eds.) Sub-Micron Semiconductor Devices: Design and Applications. CRC Press: Boca Raton. ISBN 9780367648091 (doi: 10.1201/9781003126393-15)

Kumar, P., Gupta, M., Singh, K., Gupta, A. K. and Kumar, N. (2022) Design and analysis of transition metal dichalcogenide-based feedback transistor. In: Raman, A., Shekhar, D. and Kumar, N. (eds.) Sub-Micron Semiconductor Devices: Design and Applications. CRC Press: Boca Raton, pp. 309-318. ISBN 9781003126393 (doi: 10.1201/9781003126393-19)

Raman, A., Chaturvedi, C. and Kumar, N. (2021) Multi‐quantum well‐based solar cell. In: Tripathi, S. L., Alvi, P. A. and Subramaniam, U. (eds.) Electrical and Electronic Devices, Circuits, and Materials. Wiley, pp. 351-372. ISBN 9781119750369 (doi: 10.1002/9781119755104.ch19)

Conference Proceedings

Kumar, N. , Dixit, A., Rezaei, A. , Dutta, T. , Pascual García, C. and Georgiev, V. (2023) Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for Memory and Sensing Applications. In: 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), Paestum, Italy, 22-25 October 2023, pp. 617-620. ISBN 9798350335460 (doi: 10.1109/nmdc57951.2023.10343913)

Gandhi, N., Jaisawal, R. K., Rathore, S., Kondekar, P. N., Dixit, A., Kumar, N. , Georgiev, V. and Bagga, N. (2023) Gate Oxide Induced Reliability Assessment of Junctionless FinFET-Based Hydrogen Gas Sensor. In: 2023 IEEE SENSORS, Vienna, Austria, 29 Oct - 01 Nov 2023, ISBN 9798350303872 (doi: 10.1109/SENSORS56945.2023.10324885)

Kumar, N. , García, C. P., Rezaei, A. , Dixit, A., Asenov, A. and Georgiev, V. (2023) Electrolyte-Gated FET-based Sensing of Immobilized Amphoteric Molecules Including the Variability in Affinity of the Reactive Sites. In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 27-29 September 2023, pp. 377-380. ISBN 9784863488038 (doi: 10.23919/SISPAD57422.2023.10319578)

Kumar, N. , García, C. P., Dixit, A., Rezaei, A. and Georgiev, V. (2023) Novel Detection Methodology of Milk-Oligopeptides Fingerprints using Ion-Sensitive BioFET. In: 2023 IEEE BioSensors Conference (BioSensors), London, UK, 30 July - 1 August 2023, ISBN 9798350346046 (doi: 10.1109/BioSensors58001.2023.10281172)

Mishra, S. , John, D. A., Kumar, N. , Rai, B. and Georgiev, V. (2023) Human-Inspired Stretch and Joint-Bend Sensing System Based on Flexible Sensors. In: IEEE Sensors 2023, Vienna, Austria, 29 Oct - 01 Nov 2023, (Accepted for Publication)

Aliyana, A. K., Baburaj, A., Jalajamony, H. M., Kumar S.K., N. , Dahiya, R. and Fernadez, R. E. (2022) Impact of Analyte pH on the Sensitivity of Screen-Printed Flexible Ammonium Sensor. In: 2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS), Vienna, Austria, 10-13 Jul 2022, ISBN 9781665442732 (doi: 10.1109/fleps53764.2022.9781496)

Dhar, R. P. S., Kumar, N. , Medina-Bailon, C., Garcia, C. P. and Georgiev, V. P. (2021) TCAD Simulations of High-Aspect-Ratio Nano-biosensor for Label-Free Sensing Application. In: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Caen, France, 1-3 Sep 2021, ISBN 9781665437455 (doi: 10.1109/EuroSOI-ULIS53016.2021.9560701)

Dutta, T. , Medina Bailon, C., Rezaei, A. , Nagy, D. , Adamu-Lema, F., Xeni, N., Abourrig, Y., Kumar, N. , Georgiev, V. and Asenov, A. (2021) TCAD Simulation of Novel Semiconductor Devices. In: International Conference on ASIC (ASICON) 2021, Kunming, China, 26-29 October 2021, ISBN 9781665438674 (doi: 10.1109/ASICON52560.2021.9620465)