Mrs Maira Elksne
- Affiliate (School of Engineering)
Publications
2023
Alomari, Saif, Al-Taai, Qusay ORCID: https://orcid.org/0000-0001-5741-0527, Elksne, Maira
ORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204, Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X and Figueiredo, José
(2023)
Speed limitations of resonant tunneling diode-based photodetectors.
Optics Express, 31(11),
pp. 18300-18317.
(doi: 10.1364/OE.486701)
2022
Dhongde, Aniket, Taking, Sanna, Ofiare, Afesomeh, Karami, Kaivan ORCID: https://orcid.org/0000-0002-7530-2922, Elksne, Maira, Dwidar, Mahmud, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2022)
DC and RF Characteristics of Buffer-Free AlGaN/GaN HEMT and MIS-HEMTs Using Si3N4 Passivated Mesa-Sidewall.
In: International Conference on Electronic and Photonic Integrated Circuits (EPIC- 2022), Andhra Pradesh, India, 15-17 Dec 2022,
(Accepted for Publication)
Dhongde, Aniket, Elksne, Maira ORCID: https://orcid.org/0000-0003-2999-3520, Karami, Kaivan
ORCID: https://orcid.org/0000-0002-7530-2922 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2022)
Comparative Study of AlGaN/GaN HEMTs with and without the Buffer on SiC Substrates.
UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.
Ofiare, Afesomeh, Taking, Sanna, Elksne, Maira ORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204, Ghosh, S., Kappers, M., Oliver, R.A. and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2022)
Approach to Normally-Off AlGaN/GaN MIS-HEMTs with High Drain Current Using AlGaN Overgrowth Technique.
UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.
Dhongde, Aniket, Taking, Sanna, Elksne, Maira ORCID: https://orcid.org/0000-0003-2999-3520, Ofiare, Afesomeh, Karami, Kaivan
ORCID: https://orcid.org/0000-0002-7530-2922, Dwidar, Mahmud, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2022)
High Performance of AlGaN/GaN HEMTs using Buffer-Free GaN on SiC Structure.
45th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits, Ponta Delgada (São Miguel island – Azores), Portugal, 3-6 May 2022.
Karami, Kaivan ORCID: https://orcid.org/0000-0002-7530-2922, Taking, Sanna, Ofiare, Afesomeh, Elksne, Maira
ORCID: https://orcid.org/0000-0003-2999-3520, Dhongde, Aniket, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2022)
Investigation of Al2O3, Si3N4 and SiO2 Used for Surface Passivation and Gate Dielectric on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors.
WOCSDICE EXMATEC 2022, Ponta Delgada (São Miguel island–Azores), 3-6 May 2022.
2021
Dhongde, Aniket, Taking, Sanna, Elksne, Maira ORCID: https://orcid.org/0000-0003-2999-3520, Samanta, Swagata
ORCID: https://orcid.org/0000-0003-2943-0189, Ofiare, Afesomeh, Karami, Kaivan
ORCID: https://orcid.org/0000-0002-7530-2922, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2021)
The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs.
International Journal of Nanoelectronics and Materials, 14,
pp. 21-28.
Elksne, Maira ORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2021)
Thick GaN Capped AlGaN/GaN HEMTs for Reduced Surface Effects.
UKNC Winter Meeting 2021, 7-8 Jan 2021.
2019
Elksne, Maira ORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2019)
A planar distributed channel AlGaN/GaN HEMT technology.
IEEE Transactions on Electron Devices, 66(5),
pp. 2454-2458.
(doi: 10.1109/TED.2019.2907152)
Elksne, M. ORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, A.
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, E.
ORCID: https://orcid.org/0000-0001-5014-342X
(2019)
AlGaN/GaN HEMTs With Improved Thermal Efficiency.
UKNC Winter Conference 2019, Glasgow, UK, 09-10 Jan 2019.
2018
Vasilevska, Maira ORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2018)
Thermal Performance of AlGaN/GaN HEMTs on SiC Substrates.
UK Nitrides Consortium Summer Meeting, Sheffield, UK, 12-13 Jul 2017.
Elksne, Maira ORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2018)
AlGaN/GaN HEMTs With Reduced Self‐Heating.
Compound Semiconductor Week 2018, Cambridge, MA, USA, 29 May - 01 Jun 2018.
Elksne, Maira ORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2018)
AlGaN/GaN HEMT with Distributed Gate for Improved Thermal Performance.
In: 2018 13th European Microwave Integrated Circuits Conference (EuMIC), Madrid, Spain, 23-25 Sep 2018,
pp. 13-16.
ISBN 9782874870521
(doi: 10.23919/EuMIC.2018.8539896)
Articles
Alomari, Saif, Al-Taai, Qusay ORCID: https://orcid.org/0000-0001-5741-0527, Elksne, Maira
ORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204, Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X and Figueiredo, José
(2023)
Speed limitations of resonant tunneling diode-based photodetectors.
Optics Express, 31(11),
pp. 18300-18317.
(doi: 10.1364/OE.486701)
Dhongde, Aniket, Taking, Sanna, Elksne, Maira ORCID: https://orcid.org/0000-0003-2999-3520, Samanta, Swagata
ORCID: https://orcid.org/0000-0003-2943-0189, Ofiare, Afesomeh, Karami, Kaivan
ORCID: https://orcid.org/0000-0002-7530-2922, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2021)
The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs.
International Journal of Nanoelectronics and Materials, 14,
pp. 21-28.
Elksne, Maira ORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2019)
A planar distributed channel AlGaN/GaN HEMT technology.
IEEE Transactions on Electron Devices, 66(5),
pp. 2454-2458.
(doi: 10.1109/TED.2019.2907152)
Conference or Workshop Item
Dhongde, Aniket, Elksne, Maira ORCID: https://orcid.org/0000-0003-2999-3520, Karami, Kaivan
ORCID: https://orcid.org/0000-0002-7530-2922 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2022)
Comparative Study of AlGaN/GaN HEMTs with and without the Buffer on SiC Substrates.
UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.
Ofiare, Afesomeh, Taking, Sanna, Elksne, Maira ORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204, Ghosh, S., Kappers, M., Oliver, R.A. and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2022)
Approach to Normally-Off AlGaN/GaN MIS-HEMTs with High Drain Current Using AlGaN Overgrowth Technique.
UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.
Dhongde, Aniket, Taking, Sanna, Elksne, Maira ORCID: https://orcid.org/0000-0003-2999-3520, Ofiare, Afesomeh, Karami, Kaivan
ORCID: https://orcid.org/0000-0002-7530-2922, Dwidar, Mahmud, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2022)
High Performance of AlGaN/GaN HEMTs using Buffer-Free GaN on SiC Structure.
45th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits, Ponta Delgada (São Miguel island – Azores), Portugal, 3-6 May 2022.
Karami, Kaivan ORCID: https://orcid.org/0000-0002-7530-2922, Taking, Sanna, Ofiare, Afesomeh, Elksne, Maira
ORCID: https://orcid.org/0000-0003-2999-3520, Dhongde, Aniket, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2022)
Investigation of Al2O3, Si3N4 and SiO2 Used for Surface Passivation and Gate Dielectric on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors.
WOCSDICE EXMATEC 2022, Ponta Delgada (São Miguel island–Azores), 3-6 May 2022.
Elksne, Maira ORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2021)
Thick GaN Capped AlGaN/GaN HEMTs for Reduced Surface Effects.
UKNC Winter Meeting 2021, 7-8 Jan 2021.
Elksne, M. ORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, A.
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, E.
ORCID: https://orcid.org/0000-0001-5014-342X
(2019)
AlGaN/GaN HEMTs With Improved Thermal Efficiency.
UKNC Winter Conference 2019, Glasgow, UK, 09-10 Jan 2019.
Vasilevska, Maira ORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2018)
Thermal Performance of AlGaN/GaN HEMTs on SiC Substrates.
UK Nitrides Consortium Summer Meeting, Sheffield, UK, 12-13 Jul 2017.
Elksne, Maira ORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2018)
AlGaN/GaN HEMTs With Reduced Self‐Heating.
Compound Semiconductor Week 2018, Cambridge, MA, USA, 29 May - 01 Jun 2018.
Conference Proceedings
Dhongde, Aniket, Taking, Sanna, Ofiare, Afesomeh, Karami, Kaivan ORCID: https://orcid.org/0000-0002-7530-2922, Elksne, Maira, Dwidar, Mahmud, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2022)
DC and RF Characteristics of Buffer-Free AlGaN/GaN HEMT and MIS-HEMTs Using Si3N4 Passivated Mesa-Sidewall.
In: International Conference on Electronic and Photonic Integrated Circuits (EPIC- 2022), Andhra Pradesh, India, 15-17 Dec 2022,
(Accepted for Publication)
Elksne, Maira ORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2018)
AlGaN/GaN HEMT with Distributed Gate for Improved Thermal Performance.
In: 2018 13th European Microwave Integrated Circuits Conference (EuMIC), Madrid, Spain, 23-25 Sep 2018,
pp. 13-16.
ISBN 9782874870521
(doi: 10.23919/EuMIC.2018.8539896)