Mrs Maira Elksne

  • Affiliate (School of Engineering)

Publications

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Jump to: 2023 | 2022 | 2021 | 2019 | 2018
Number of items: 13.

2023

Alomari, Saif, Al-Taai, Qusay ORCID logoORCID: https://orcid.org/0000-0001-5741-0527, Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204, Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X and Figueiredo, José (2023) Speed limitations of resonant tunneling diode-based photodetectors. Optics Express, 31(11), pp. 18300-18317. (doi: 10.1364/OE.486701)

2022

Dhongde, Aniket, Taking, Sanna, Ofiare, Afesomeh, Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Elksne, Maira, Dwidar, Mahmud, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) DC and RF Characteristics of Buffer-Free AlGaN/GaN HEMT and MIS-HEMTs Using Si3N4 Passivated Mesa-Sidewall. In: International Conference on Electronic and Photonic Integrated Circuits (EPIC- 2022), Andhra Pradesh, India, 15-17 Dec 2022, (Accepted for Publication)

Dhongde, Aniket, Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) Comparative Study of AlGaN/GaN HEMTs with and without the Buffer on SiC Substrates. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Ofiare, Afesomeh, Taking, Sanna, Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204, Ghosh, S., Kappers, M., Oliver, R.A. and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) Approach to Normally-Off AlGaN/GaN MIS-HEMTs with High Drain Current Using AlGaN Overgrowth Technique. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Dhongde, Aniket, Taking, Sanna, Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Ofiare, Afesomeh, Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Dwidar, Mahmud, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) High Performance of AlGaN/GaN HEMTs using Buffer-Free GaN on SiC Structure. 45th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits, Ponta Delgada (São Miguel island – Azores), Portugal, 3-6 May 2022.

Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Taking, Sanna, Ofiare, Afesomeh, Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Dhongde, Aniket, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) Investigation of Al2O3, Si3N4 and SiO2 Used for Surface Passivation and Gate Dielectric on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors. WOCSDICE EXMATEC 2022, Ponta Delgada (São Miguel island–Azores), 3-6 May 2022.

2021

Dhongde, Aniket, Taking, Sanna, Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Samanta, Swagata ORCID logoORCID: https://orcid.org/0000-0003-2943-0189, Ofiare, Afesomeh, Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2021) The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs. International Journal of Nanoelectronics and Materials, 14, pp. 21-28.

Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2021) Thick GaN Capped AlGaN/GaN HEMTs for Reduced Surface Effects. UKNC Winter Meeting 2021, 7-8 Jan 2021.

2019

Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2019) A planar distributed channel AlGaN/GaN HEMT technology. IEEE Transactions on Electron Devices, 66(5), pp. 2454-2458. (doi: 10.1109/TED.2019.2907152)

Elksne, M. ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, A. ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, E. ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2019) AlGaN/GaN HEMTs With Improved Thermal Efficiency. UKNC Winter Conference 2019, Glasgow, UK, 09-10 Jan 2019.

2018

Vasilevska, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2018) Thermal Performance of AlGaN/GaN HEMTs on SiC Substrates. UK Nitrides Consortium Summer Meeting, Sheffield, UK, 12-13 Jul 2017.

Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2018) AlGaN/GaN HEMTs With Reduced Self‐Heating. Compound Semiconductor Week 2018, Cambridge, MA, USA, 29 May - 01 Jun 2018.

Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2018) AlGaN/GaN HEMT with Distributed Gate for Improved Thermal Performance. In: 2018 13th European Microwave Integrated Circuits Conference (EuMIC), Madrid, Spain, 23-25 Sep 2018, pp. 13-16. ISBN 9782874870521 (doi: 10.23919/EuMIC.2018.8539896)

This list was generated on Wed Jul 2 21:34:49 2025 BST.
Jump to: Articles | Conference or Workshop Item | Conference Proceedings
Number of items: 13.

Articles

Alomari, Saif, Al-Taai, Qusay ORCID logoORCID: https://orcid.org/0000-0001-5741-0527, Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204, Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X and Figueiredo, José (2023) Speed limitations of resonant tunneling diode-based photodetectors. Optics Express, 31(11), pp. 18300-18317. (doi: 10.1364/OE.486701)

Dhongde, Aniket, Taking, Sanna, Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Samanta, Swagata ORCID logoORCID: https://orcid.org/0000-0003-2943-0189, Ofiare, Afesomeh, Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2021) The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs. International Journal of Nanoelectronics and Materials, 14, pp. 21-28.

Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2019) A planar distributed channel AlGaN/GaN HEMT technology. IEEE Transactions on Electron Devices, 66(5), pp. 2454-2458. (doi: 10.1109/TED.2019.2907152)

Conference or Workshop Item

Dhongde, Aniket, Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) Comparative Study of AlGaN/GaN HEMTs with and without the Buffer on SiC Substrates. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Ofiare, Afesomeh, Taking, Sanna, Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204, Ghosh, S., Kappers, M., Oliver, R.A. and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) Approach to Normally-Off AlGaN/GaN MIS-HEMTs with High Drain Current Using AlGaN Overgrowth Technique. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Dhongde, Aniket, Taking, Sanna, Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Ofiare, Afesomeh, Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Dwidar, Mahmud, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) High Performance of AlGaN/GaN HEMTs using Buffer-Free GaN on SiC Structure. 45th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits, Ponta Delgada (São Miguel island – Azores), Portugal, 3-6 May 2022.

Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Taking, Sanna, Ofiare, Afesomeh, Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Dhongde, Aniket, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) Investigation of Al2O3, Si3N4 and SiO2 Used for Surface Passivation and Gate Dielectric on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors. WOCSDICE EXMATEC 2022, Ponta Delgada (São Miguel island–Azores), 3-6 May 2022.

Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2021) Thick GaN Capped AlGaN/GaN HEMTs for Reduced Surface Effects. UKNC Winter Meeting 2021, 7-8 Jan 2021.

Elksne, M. ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, A. ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, E. ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2019) AlGaN/GaN HEMTs With Improved Thermal Efficiency. UKNC Winter Conference 2019, Glasgow, UK, 09-10 Jan 2019.

Vasilevska, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2018) Thermal Performance of AlGaN/GaN HEMTs on SiC Substrates. UK Nitrides Consortium Summer Meeting, Sheffield, UK, 12-13 Jul 2017.

Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2018) AlGaN/GaN HEMTs With Reduced Self‐Heating. Compound Semiconductor Week 2018, Cambridge, MA, USA, 29 May - 01 Jun 2018.

Conference Proceedings

Dhongde, Aniket, Taking, Sanna, Ofiare, Afesomeh, Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Elksne, Maira, Dwidar, Mahmud, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) DC and RF Characteristics of Buffer-Free AlGaN/GaN HEMT and MIS-HEMTs Using Si3N4 Passivated Mesa-Sidewall. In: International Conference on Electronic and Photonic Integrated Circuits (EPIC- 2022), Andhra Pradesh, India, 15-17 Dec 2022, (Accepted for Publication)

Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2018) AlGaN/GaN HEMT with Distributed Gate for Improved Thermal Performance. In: 2018 13th European Microwave Integrated Circuits Conference (EuMIC), Madrid, Spain, 23-25 Sep 2018, pp. 13-16. ISBN 9782874870521 (doi: 10.23919/EuMIC.2018.8539896)

This list was generated on Wed Jul 2 21:34:49 2025 BST.