Dr Konstanze Hild

  • Lecturer (Electronic & Nanoscale Engineering)

Publications

List by: Type | Date

Jump to: 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2008 | 2007 | 2006
Number of items: 29.

2017

Broderick, C. A. et al. (2017) GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics. Scientific Reports, 7, 46371. (doi: 10.1038/srep46371)

2016

Nattermann, L. et al. (2016) MOVPE growth and characterization of quaternary Ga(PAsBi)/GaAs alloys for optoelectronic applications. Applied Materials Today, 5, pp. 209-214. (doi: 10.1016/j.apmt.2016.09.018)

Bonmati-Carrion, M. A., Hild, K., Isherwood, C., Sweeney, S. J. , Revell, V. L., Skene, D. J., Rol, M. A. and Madrid, J. A. (2016) Relationship between human pupillary light reflex and circadian system status. PLoS ONE, 11(9), e0162476. (doi: 10.1371/journal.pone.0162476) (PMID:27636197) (PMCID:PMC5026360)

Ikyo, A.B., Marko, I.P., Hild, K., Adams, A.R., Arafin, S., Amann, M.-C. and Sweeney, S.J. (2016) Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs). Scientific Reports, 6, 19595. (doi: 10.1038/srep19595) (PMID:26781492) (PMCID:PMC4726019)

2015

Sweeney, S.J. , Marko, I.P., Jin, S.R., Hild, K. and Batool, Z. (2015) Bismuth-based semiconductors for mid-infrared photonic devices. In: 2015 IEEE Summer Topicals Meeting Series (SUM), Nassau, Bahamas, 13-15 Jul 2015, pp. 181-182. ISBN 9781479974689 (doi: 10.1109/PHOSST.2015.7248257)

Marko, I.P. et al. (2015) Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers. Semiconductor Science and Technology, 30, 094008. (doi: 10.1088/0268-1242/30/9/094008)

2014

Sweeney, S.J. et al. (2014) Electrically Injected GaAsBi Quantum Well Lasers. In: 2014 International Semiconductor Laser Conference, Palma de Mallorca, Spain, 07-10 Sep 2014, pp. 80-81. ISBN 9781479957217 (doi: 10.1109/ISLC.2014.173)

Marko, I.P. et al. (2014) Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi. Journal of Physics D: Applied Physics, 47, 345103. (doi: 10.1088/0022-3727/47/34/345103)

Bushell, Z.L., Ludewig, P., Knaub, N., Batool, Z., Hild, K., Stolz, W., Sweeney, S.J. and Volz, K. (2014) Growth and characterisation of Ga(NAsBi) alloy by metal-organic vapour phase epitaxy. Journal of Crystal Growth, 396, pp. 79-84. (doi: 10.1016/j.jcrysgro.2014.03.038)

Chai, G.M.T., Hosea, T.J.C., Fox, N.E., Hild, K., Ikyo, A.B., Marko, I.P., Sweeney, S.J. , Bachmann, A., Arafin, S. and Amann, M.-C. (2014) Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance. Journal of Applied Physics, 115(1), 013102. (doi: 10.1063/1.4861146)

2013

Hild, K., Batool, Z., Jin, S.R., Hossain, N., Marko, I.P., Hosea, T.J.C., Lu, X., Tiedje, T. and Sweeney, S.J. (2013) Auger Recombination Suppression and Band Alignment in GaAsBi/GaAs Heterostructures. In: 31st International Conference on the Physics of Semiconductors (ICPS) 2012, Zurich, Switzerland, 29 Jul–3 Aug 2012, pp. 488-489. ISBN 9780735411944 (doi: 10.1063/1.4848498)

Ludewig, P. et al. (2013) Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser. Applied Physics Letters, 102(24), 242115. (doi: 10.1063/1.4811736)

Sweeney, S. J. , Hild, K. and Jin, S. (2013) The Potential of GaAsBiN for Multi-junction Solar Cells. In: 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), Tampa, Florida, USA, 16-21 Jun 2013, pp. 2474-2478. ISBN 9781479932993 (doi: 10.1109/PVSC.2013.6744977)

Ikyo, B. A., Marko, I. P., Hild, K., Adams, A. R., Arafin, S., Amann, M.-C. and Sweeney, S. J. (2013) The effect of hole leakage and auger recombination on the temperature sensitivity of GaInAsSb/GaSb mid-infrared lasers. In: 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC, Munich, Germany, 12-16 May 2013, ISBN 9781479905942 (doi: 10.1109/cleoe-iqec.2013.6800690)

Usman, M., Broderick, C. A., Batool, Z., Hild, K., Hosea, T. J. C., Sweeney, S. J. and O'Reilly, E. P. (2013) Impact of alloy disorder on the band structure of compressively strained GaBixAs1-x. Physical Review B, 87(11), 115104. (doi: 10.1103/PhysRevB.87.115104)

Hossain, N., Hild, K., Jin, S.R., Yu, S.-Q., Johnson, S.R., Ding, D., Zhang, Y.-H. and Sweeney, S.J. (2013) The influence of growth conditions on carrier recombination mechanisms in 1.3 μm GaAsSb/GaAs quantum well lasers. Applied Physics Letters, 102(4), 041106. (doi: 10.1063/1.4789859)

Batool, Z. et al. (2013) Bismuth-containing III-V semiconductors: epitaxial growth and physical properties. In: Henini, M. (ed.) Molecular Beam Epitaxy: From Research to Mass Production. Elsevier: Amsterdam, pp. 139-158. ISBN 9780123878397 (doi: 10.1016/B978-0-12-387839-7.00007-5)

2012

Marko, I.P. et al. (2012) Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications. Applied Physics Letters, 101(22), 221108. (doi: 10.1063/1.4768532)

Hosea, T.J.C. et al. (2012) InGaBiAs/InP Semiconductors for Mid-infrared Applications: Dependence of Bandgap and Spin-orbit Splitting on Temperature and Bismuth Content. In: 2012 IEEE 3rd International Conference on Photonics, Pulau Pinang, Malaysia, 1-3 Oct 2012, pp. 154-158. ISBN 9781467314633 (doi: 10.1109/ICP.2012.6379872)

Blume, G., Hild, K., Marko, I.P., Hosea, T.J.C., Yu, S.-Q., Chaparro, S.A., Samal, N., Johnson, S.R., Zhang, Y.-H. and Sweeney, S.J. (2012) Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements. Journal of Applied Physics, 112(3), 033108. (doi: 10.1063/1.4744985)

Batool, Z., Hild, K., Hosea, T.J.C., Lu, X., Tiedje, T. and Sweeney, S.J. (2012) The electronic band structure of GaBiAs/GaAs layers: influence of strain and band anti-crossing. Journal of Applied Physics, 111(11), 113108. (doi: 10.1063/1.4728028)

Hossain, N., Marko, I.P., Jin, S.R., Hild, K., Sweeney, S.J. , Lewis, R.B., Beaton, D.A. and Tiedje, T. (2012) Recombination mechanisms and band alignment of GaAs1-xBi x/GaAs light emitting diodes. Applied Physics Letters, 100(5), 051105. (doi: 10.1063/1.3681139)

2011

Hild, K., Marko, I.P., Johnson, S.R., Yu, S.-Q., Zhang, Y.-H. and Sweeney, S.J. (2011) Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 μm GaAsSb/GaAs vertical cavity surface emitting lasers. Applied Physics Letters, 99(7), 071110. (doi: 10.1063/1.3625938)

Sweeney, S.J. , Batool, Z., Hild, K., Jin, S.R. and Hosea, T.J.C. (2011) The Potential Role of Bismide Alloys in Future Photonic Devices. In: 2011 13th International Conference on Transparent Optical Networks, Stockholm, Sweden, 26-30 Jun 2011, ISBN 9781457708800 (doi: 10.1109/ICTON.2011.5970829)

2010

Hossain, N., Hild, K., Jin, S.R., Sweeney, S.J. , Yu, S.-Q., Johnson, S.R., Ding, D. and Zhang, Y.-H. (2010) Influence Of Device Structures on Carrier Recombination in GaAsSb/GaAs QW Lasers. In: 2010 Photonics Global Conference, Orchard, Singapore, 14-16 Dec 2010, ISBN 9781424498819 (doi: 10.1109/PGC.2010.5706061)

Hossain, N., Hild, K., Jin, S., Sweeney, S. J. , Yu, S.-Q., Johnson, S. R., Ding, D. and Zhang, Y.-H. (2010) Role of Growth Temperature on the Physical Characteristics of GaAsSb/GaAs QW Lasers. In: 2010 23rd Annual Meeting of the IEEE Photonics Society, Denver, Colorado, USA, 7-11 Nov 2010, pp. 59-60. ISBN 97814244-53689 (doi: 10.1109/PHOTONICS.2010.5698756)

2008

Sweeney, S.J. , Hild, K., Marko, I.P., Yu, S.-Q., Johnson, S.R. and Zhang, Y.-H. (2008) Thermal characteristics of 1.3μm GaAsSb/GaAs-based edge- and surface-emitting lasers. In: 2008 IEEE 21st International Semiconductor Laser Conference, Sorrento, Italy, 14-18 Sep 2008, pp. 83-84. ISBN 9781424417827 (doi: 10.1109/ISLC.2008.4636020)

2007

Hild, K., Sweeney, S.J. , Marko, I.P., Jin, S.R., Johnson, S.R., Chaparro, S.A., Yu, S. and Zhang, Y.-H. (2007) Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers. Physica Status Solidi B: Basic Solid State Physics, 244(1), pp. 197-202. (doi: 10.1002/pssb.200672571)

2006

Hild, K., Sweeney, .J. , Jin, S.R., Healy, S.B., O'Reilly, E.P., Johnson, S.R., Wang, J.-B. and Zhang, Y.-H. (2006) Band alignment and carrier recombination in GaAsSb/GaAs quantum wells. In: 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006, pp. 1431-1432. ISBN 9780735403970 (doi: 10.1063/1.2730443)

This list was generated on Thu Apr 25 06:47:55 2024 BST.
Number of items: 29.

Articles

Broderick, C. A. et al. (2017) GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics. Scientific Reports, 7, 46371. (doi: 10.1038/srep46371)

Nattermann, L. et al. (2016) MOVPE growth and characterization of quaternary Ga(PAsBi)/GaAs alloys for optoelectronic applications. Applied Materials Today, 5, pp. 209-214. (doi: 10.1016/j.apmt.2016.09.018)

Bonmati-Carrion, M. A., Hild, K., Isherwood, C., Sweeney, S. J. , Revell, V. L., Skene, D. J., Rol, M. A. and Madrid, J. A. (2016) Relationship between human pupillary light reflex and circadian system status. PLoS ONE, 11(9), e0162476. (doi: 10.1371/journal.pone.0162476) (PMID:27636197) (PMCID:PMC5026360)

Ikyo, A.B., Marko, I.P., Hild, K., Adams, A.R., Arafin, S., Amann, M.-C. and Sweeney, S.J. (2016) Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs). Scientific Reports, 6, 19595. (doi: 10.1038/srep19595) (PMID:26781492) (PMCID:PMC4726019)

Marko, I.P. et al. (2015) Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers. Semiconductor Science and Technology, 30, 094008. (doi: 10.1088/0268-1242/30/9/094008)

Marko, I.P. et al. (2014) Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi. Journal of Physics D: Applied Physics, 47, 345103. (doi: 10.1088/0022-3727/47/34/345103)

Bushell, Z.L., Ludewig, P., Knaub, N., Batool, Z., Hild, K., Stolz, W., Sweeney, S.J. and Volz, K. (2014) Growth and characterisation of Ga(NAsBi) alloy by metal-organic vapour phase epitaxy. Journal of Crystal Growth, 396, pp. 79-84. (doi: 10.1016/j.jcrysgro.2014.03.038)

Chai, G.M.T., Hosea, T.J.C., Fox, N.E., Hild, K., Ikyo, A.B., Marko, I.P., Sweeney, S.J. , Bachmann, A., Arafin, S. and Amann, M.-C. (2014) Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance. Journal of Applied Physics, 115(1), 013102. (doi: 10.1063/1.4861146)

Ludewig, P. et al. (2013) Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser. Applied Physics Letters, 102(24), 242115. (doi: 10.1063/1.4811736)

Usman, M., Broderick, C. A., Batool, Z., Hild, K., Hosea, T. J. C., Sweeney, S. J. and O'Reilly, E. P. (2013) Impact of alloy disorder on the band structure of compressively strained GaBixAs1-x. Physical Review B, 87(11), 115104. (doi: 10.1103/PhysRevB.87.115104)

Hossain, N., Hild, K., Jin, S.R., Yu, S.-Q., Johnson, S.R., Ding, D., Zhang, Y.-H. and Sweeney, S.J. (2013) The influence of growth conditions on carrier recombination mechanisms in 1.3 μm GaAsSb/GaAs quantum well lasers. Applied Physics Letters, 102(4), 041106. (doi: 10.1063/1.4789859)

Marko, I.P. et al. (2012) Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications. Applied Physics Letters, 101(22), 221108. (doi: 10.1063/1.4768532)

Blume, G., Hild, K., Marko, I.P., Hosea, T.J.C., Yu, S.-Q., Chaparro, S.A., Samal, N., Johnson, S.R., Zhang, Y.-H. and Sweeney, S.J. (2012) Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements. Journal of Applied Physics, 112(3), 033108. (doi: 10.1063/1.4744985)

Batool, Z., Hild, K., Hosea, T.J.C., Lu, X., Tiedje, T. and Sweeney, S.J. (2012) The electronic band structure of GaBiAs/GaAs layers: influence of strain and band anti-crossing. Journal of Applied Physics, 111(11), 113108. (doi: 10.1063/1.4728028)

Hossain, N., Marko, I.P., Jin, S.R., Hild, K., Sweeney, S.J. , Lewis, R.B., Beaton, D.A. and Tiedje, T. (2012) Recombination mechanisms and band alignment of GaAs1-xBi x/GaAs light emitting diodes. Applied Physics Letters, 100(5), 051105. (doi: 10.1063/1.3681139)

Hild, K., Marko, I.P., Johnson, S.R., Yu, S.-Q., Zhang, Y.-H. and Sweeney, S.J. (2011) Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 μm GaAsSb/GaAs vertical cavity surface emitting lasers. Applied Physics Letters, 99(7), 071110. (doi: 10.1063/1.3625938)

Hild, K., Sweeney, S.J. , Marko, I.P., Jin, S.R., Johnson, S.R., Chaparro, S.A., Yu, S. and Zhang, Y.-H. (2007) Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers. Physica Status Solidi B: Basic Solid State Physics, 244(1), pp. 197-202. (doi: 10.1002/pssb.200672571)

Book Sections

Batool, Z. et al. (2013) Bismuth-containing III-V semiconductors: epitaxial growth and physical properties. In: Henini, M. (ed.) Molecular Beam Epitaxy: From Research to Mass Production. Elsevier: Amsterdam, pp. 139-158. ISBN 9780123878397 (doi: 10.1016/B978-0-12-387839-7.00007-5)

Conference Proceedings

Sweeney, S.J. , Marko, I.P., Jin, S.R., Hild, K. and Batool, Z. (2015) Bismuth-based semiconductors for mid-infrared photonic devices. In: 2015 IEEE Summer Topicals Meeting Series (SUM), Nassau, Bahamas, 13-15 Jul 2015, pp. 181-182. ISBN 9781479974689 (doi: 10.1109/PHOSST.2015.7248257)

Sweeney, S.J. et al. (2014) Electrically Injected GaAsBi Quantum Well Lasers. In: 2014 International Semiconductor Laser Conference, Palma de Mallorca, Spain, 07-10 Sep 2014, pp. 80-81. ISBN 9781479957217 (doi: 10.1109/ISLC.2014.173)

Hild, K., Batool, Z., Jin, S.R., Hossain, N., Marko, I.P., Hosea, T.J.C., Lu, X., Tiedje, T. and Sweeney, S.J. (2013) Auger Recombination Suppression and Band Alignment in GaAsBi/GaAs Heterostructures. In: 31st International Conference on the Physics of Semiconductors (ICPS) 2012, Zurich, Switzerland, 29 Jul–3 Aug 2012, pp. 488-489. ISBN 9780735411944 (doi: 10.1063/1.4848498)

Sweeney, S. J. , Hild, K. and Jin, S. (2013) The Potential of GaAsBiN for Multi-junction Solar Cells. In: 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), Tampa, Florida, USA, 16-21 Jun 2013, pp. 2474-2478. ISBN 9781479932993 (doi: 10.1109/PVSC.2013.6744977)

Ikyo, B. A., Marko, I. P., Hild, K., Adams, A. R., Arafin, S., Amann, M.-C. and Sweeney, S. J. (2013) The effect of hole leakage and auger recombination on the temperature sensitivity of GaInAsSb/GaSb mid-infrared lasers. In: 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC, Munich, Germany, 12-16 May 2013, ISBN 9781479905942 (doi: 10.1109/cleoe-iqec.2013.6800690)

Hosea, T.J.C. et al. (2012) InGaBiAs/InP Semiconductors for Mid-infrared Applications: Dependence of Bandgap and Spin-orbit Splitting on Temperature and Bismuth Content. In: 2012 IEEE 3rd International Conference on Photonics, Pulau Pinang, Malaysia, 1-3 Oct 2012, pp. 154-158. ISBN 9781467314633 (doi: 10.1109/ICP.2012.6379872)

Sweeney, S.J. , Batool, Z., Hild, K., Jin, S.R. and Hosea, T.J.C. (2011) The Potential Role of Bismide Alloys in Future Photonic Devices. In: 2011 13th International Conference on Transparent Optical Networks, Stockholm, Sweden, 26-30 Jun 2011, ISBN 9781457708800 (doi: 10.1109/ICTON.2011.5970829)

Hossain, N., Hild, K., Jin, S.R., Sweeney, S.J. , Yu, S.-Q., Johnson, S.R., Ding, D. and Zhang, Y.-H. (2010) Influence Of Device Structures on Carrier Recombination in GaAsSb/GaAs QW Lasers. In: 2010 Photonics Global Conference, Orchard, Singapore, 14-16 Dec 2010, ISBN 9781424498819 (doi: 10.1109/PGC.2010.5706061)

Hossain, N., Hild, K., Jin, S., Sweeney, S. J. , Yu, S.-Q., Johnson, S. R., Ding, D. and Zhang, Y.-H. (2010) Role of Growth Temperature on the Physical Characteristics of GaAsSb/GaAs QW Lasers. In: 2010 23rd Annual Meeting of the IEEE Photonics Society, Denver, Colorado, USA, 7-11 Nov 2010, pp. 59-60. ISBN 97814244-53689 (doi: 10.1109/PHOTONICS.2010.5698756)

Sweeney, S.J. , Hild, K., Marko, I.P., Yu, S.-Q., Johnson, S.R. and Zhang, Y.-H. (2008) Thermal characteristics of 1.3μm GaAsSb/GaAs-based edge- and surface-emitting lasers. In: 2008 IEEE 21st International Semiconductor Laser Conference, Sorrento, Italy, 14-18 Sep 2008, pp. 83-84. ISBN 9781424417827 (doi: 10.1109/ISLC.2008.4636020)

Hild, K., Sweeney, .J. , Jin, S.R., Healy, S.B., O'Reilly, E.P., Johnson, S.R., Wang, J.-B. and Zhang, Y.-H. (2006) Band alignment and carrier recombination in GaAsSb/GaAs quantum wells. In: 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006, pp. 1431-1432. ISBN 9780735403970 (doi: 10.1063/1.2730443)

This list was generated on Thu Apr 25 06:47:55 2024 BST.