Dr Kaivan Karami

  • Affiliate (School of Engineering)

Publications

List by: Type | Date

Jump to: 2024 | 2023 | 2022 | 2021
Number of items: 16.

2024

Paul, J. et al. (2024) Niobium Quantum Devices: From Fabrication to Measurement. Superconducting Quantum Devices in the UK 2024, London, UK, 18 Jun 2024.

Paul, J. et al. (2024) Development of Superconducting Qubit and Circuit-Components for Advanced Quantum Technologies. Seminar at the National Physical Laboratory, London, UK, 01 Feb 2024.

2023

Paul, J. et al. (2023) Scalable and CMOS-Compatible Superconducting Qubit Fabrication Process for Quantum Computing Applications. Superconducting Qubits and Algorithms Conference (SQA), Munich, Germany, 29 Aug - 01 Sep 2023.

Dhongde, A., Ofiare, A., Karami, K. ORCID logoORCID: https://orcid.org/0000-0002-7530-2922 and Wasige, E. ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2023) Buffer-Free GaN-on-SiC HEMTs with Bond Pad Heat Sinks. UK Semiconductors 2023, Sheffield, UK, 12-13 July 2023. (Accepted for Publication)

Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Dhongde, Aniket, Cheng, Huihua, Reynolds, Paul M. ORCID logoORCID: https://orcid.org/0000-0001-7614-0008, Reddy, Bojja Aditya, Ritter, Daniel, Li, Chong ORCID logoORCID: https://orcid.org/0000-0001-5654-0039, Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X and Thoms, Stephen ORCID logoORCID: https://orcid.org/0000-0001-7820-6023 (2023) Robust sub-100 nm T-Gate fabrication process using multi-step development. Micro and Nano Engineering, 19, 100211. (doi: 10.1016/j.mne.2023.100211)

Karami, K. ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Hassan, S., Taking, S., Ofiare, A., Dhongde, A., Al-Khalidi, A. ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, E. ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2023) Comparative Study of Al2O3 and HfO2 as gate dielectric on AlGaN/GaN MOSHEMTs. International Journal of Electronics and Communication Engineering, 17(2), pp. 47-50.

2022

Dhongde, Aniket, Taking, Sanna, Ofiare, Afesomeh, Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Elksne, Maira, Dwidar, Mahmud, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) DC and RF Characteristics of Buffer-Free AlGaN/GaN HEMT and MIS-HEMTs Using Si3N4 Passivated Mesa-Sidewall. In: International Conference on Electronic and Photonic Integrated Circuits (EPIC- 2022), Andhra Pradesh, India, 15-17 Dec 2022, (Accepted for Publication)

Cheng, Huihua, Dhongde, Aniket, Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Reynolds, Paul ORCID logoORCID: https://orcid.org/0000-0001-7614-0008, Thoms, Stephen ORCID logoORCID: https://orcid.org/0000-0001-7820-6023, Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X and Li, Chong ORCID logoORCID: https://orcid.org/0000-0001-5654-0039 (2022) Reliable T-gate Process for THz HEMTs. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Dhongde, Aniket, Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) Comparative Study of AlGaN/GaN HEMTs with and without the Buffer on SiC Substrates. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Dhongde, Aniket, Cheng, Huihua, Reynolds, Paul M. ORCID logoORCID: https://orcid.org/0000-0001-7614-0008, Thoms, Stephen ORCID logoORCID: https://orcid.org/0000-0001-7820-6023, Reddy, Bojja Aditya, Ritter, Daniel, Li, Chong ORCID logoORCID: https://orcid.org/0000-0001-5654-0039 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) Robust sub-100 nm T-gate fabrication process using multi-step development. MNE EUROSENSORS 2022, Leuven, Belgium, 19-23 September 2022.

Dhongde, Aniket, Taking, Sanna, Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Ofiare, Afesomeh, Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Dwidar, Mahmud, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) High Performance of AlGaN/GaN HEMTs using Buffer-Free GaN on SiC Structure. 45th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits, Ponta Delgada (São Miguel island – Azores), Portugal, 3-6 May 2022.

Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Taking, Sanna, Ofiare, Afesomeh, Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Dhongde, Aniket, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) Investigation of Al2O3, Si3N4 and SiO2 Used for Surface Passivation and Gate Dielectric on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors. WOCSDICE EXMATEC 2022, Ponta Delgada (São Miguel island–Azores), 3-6 May 2022.

2021

Dhongde, Aniket, Taking, Sanna, Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Samanta, Swagata ORCID logoORCID: https://orcid.org/0000-0003-2943-0189, Ofiare, Afesomeh, Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2021) The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs. International Journal of Nanoelectronics and Materials, 14, pp. 21-28.

Ofiare, A., Taking, S., Karami, K. ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Dhongde, A., Al-Khalidi, A. ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, E. ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2021) Investigation of plasma induced etch damage/changes in AlGaN/GaN HEMTs. International Journal of Nanoelectronics and Materials, 14, pp. 29-36.

Karami, K. ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Taking, S., Dhongde, A., Ofiare, A., Al-Khalidi, A. ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, E. ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2021) Heavily doped n++ GaN cap layer AlN/GaN metal oxide semiconductor high electron mobility transistor. International Journal of Nanoelectronics and Materials, 14, pp. 45-51.

Karami, K. ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Taking, S., Ofiare, A., Dhongde, A., Al-Khalidi, A. ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, E. ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2021) High performance of n++GaN/AlN/GaN high electron mobility transistor. 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE), Bristol, UK, 14-17 June 2021.

This list was generated on Sun Jul 13 16:19:53 2025 BST.
Jump to: Articles | Conference or Workshop Item | Conference Proceedings
Number of items: 16.

Articles

Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Dhongde, Aniket, Cheng, Huihua, Reynolds, Paul M. ORCID logoORCID: https://orcid.org/0000-0001-7614-0008, Reddy, Bojja Aditya, Ritter, Daniel, Li, Chong ORCID logoORCID: https://orcid.org/0000-0001-5654-0039, Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X and Thoms, Stephen ORCID logoORCID: https://orcid.org/0000-0001-7820-6023 (2023) Robust sub-100 nm T-Gate fabrication process using multi-step development. Micro and Nano Engineering, 19, 100211. (doi: 10.1016/j.mne.2023.100211)

Karami, K. ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Hassan, S., Taking, S., Ofiare, A., Dhongde, A., Al-Khalidi, A. ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, E. ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2023) Comparative Study of Al2O3 and HfO2 as gate dielectric on AlGaN/GaN MOSHEMTs. International Journal of Electronics and Communication Engineering, 17(2), pp. 47-50.

Dhongde, Aniket, Taking, Sanna, Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Samanta, Swagata ORCID logoORCID: https://orcid.org/0000-0003-2943-0189, Ofiare, Afesomeh, Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2021) The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs. International Journal of Nanoelectronics and Materials, 14, pp. 21-28.

Ofiare, A., Taking, S., Karami, K. ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Dhongde, A., Al-Khalidi, A. ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, E. ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2021) Investigation of plasma induced etch damage/changes in AlGaN/GaN HEMTs. International Journal of Nanoelectronics and Materials, 14, pp. 29-36.

Karami, K. ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Taking, S., Dhongde, A., Ofiare, A., Al-Khalidi, A. ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, E. ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2021) Heavily doped n++ GaN cap layer AlN/GaN metal oxide semiconductor high electron mobility transistor. International Journal of Nanoelectronics and Materials, 14, pp. 45-51.

Conference or Workshop Item

Paul, J. et al. (2024) Niobium Quantum Devices: From Fabrication to Measurement. Superconducting Quantum Devices in the UK 2024, London, UK, 18 Jun 2024.

Paul, J. et al. (2024) Development of Superconducting Qubit and Circuit-Components for Advanced Quantum Technologies. Seminar at the National Physical Laboratory, London, UK, 01 Feb 2024.

Paul, J. et al. (2023) Scalable and CMOS-Compatible Superconducting Qubit Fabrication Process for Quantum Computing Applications. Superconducting Qubits and Algorithms Conference (SQA), Munich, Germany, 29 Aug - 01 Sep 2023.

Dhongde, A., Ofiare, A., Karami, K. ORCID logoORCID: https://orcid.org/0000-0002-7530-2922 and Wasige, E. ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2023) Buffer-Free GaN-on-SiC HEMTs with Bond Pad Heat Sinks. UK Semiconductors 2023, Sheffield, UK, 12-13 July 2023. (Accepted for Publication)

Cheng, Huihua, Dhongde, Aniket, Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Reynolds, Paul ORCID logoORCID: https://orcid.org/0000-0001-7614-0008, Thoms, Stephen ORCID logoORCID: https://orcid.org/0000-0001-7820-6023, Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X and Li, Chong ORCID logoORCID: https://orcid.org/0000-0001-5654-0039 (2022) Reliable T-gate Process for THz HEMTs. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Dhongde, Aniket, Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) Comparative Study of AlGaN/GaN HEMTs with and without the Buffer on SiC Substrates. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Dhongde, Aniket, Cheng, Huihua, Reynolds, Paul M. ORCID logoORCID: https://orcid.org/0000-0001-7614-0008, Thoms, Stephen ORCID logoORCID: https://orcid.org/0000-0001-7820-6023, Reddy, Bojja Aditya, Ritter, Daniel, Li, Chong ORCID logoORCID: https://orcid.org/0000-0001-5654-0039 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) Robust sub-100 nm T-gate fabrication process using multi-step development. MNE EUROSENSORS 2022, Leuven, Belgium, 19-23 September 2022.

Dhongde, Aniket, Taking, Sanna, Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Ofiare, Afesomeh, Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Dwidar, Mahmud, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) High Performance of AlGaN/GaN HEMTs using Buffer-Free GaN on SiC Structure. 45th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits, Ponta Delgada (São Miguel island – Azores), Portugal, 3-6 May 2022.

Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Taking, Sanna, Ofiare, Afesomeh, Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Dhongde, Aniket, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) Investigation of Al2O3, Si3N4 and SiO2 Used for Surface Passivation and Gate Dielectric on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors. WOCSDICE EXMATEC 2022, Ponta Delgada (São Miguel island–Azores), 3-6 May 2022.

Karami, K. ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Taking, S., Ofiare, A., Dhongde, A., Al-Khalidi, A. ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, E. ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2021) High performance of n++GaN/AlN/GaN high electron mobility transistor. 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE), Bristol, UK, 14-17 June 2021.

Conference Proceedings

Dhongde, Aniket, Taking, Sanna, Ofiare, Afesomeh, Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Elksne, Maira, Dwidar, Mahmud, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) DC and RF Characteristics of Buffer-Free AlGaN/GaN HEMT and MIS-HEMTs Using Si3N4 Passivated Mesa-Sidewall. In: International Conference on Electronic and Photonic Integrated Circuits (EPIC- 2022), Andhra Pradesh, India, 15-17 Dec 2022, (Accepted for Publication)

This list was generated on Sun Jul 13 16:19:53 2025 BST.