Mr Kaivan Karami

  • Research Assistant (Electronic & Nanoscale Engineering)

Publications

List by: Type | Date

Jump to: 2022 | 2021
Number of items: 10.

2022

Karami, K. , Hassan, S., Taking, S., Ofiare, A., Dhongde, A., Al-Khalidi, A. and Wasige, E. (2022) Comparative Study of Al2O3 and HfO2 as gate dielectric on AlGaN/GaN MOSHEMTs. In: 16th International Conference on Nitride Semiconductors (ICNS 2022), Dubai, United Arab Emirates, 10-11 Nov 2022, (Accepted for Publication)

Cheng, H., Dhongde, A., Karami, K. , Reynolds, P. , Thoms, S. , Wasige, E. and Li, C. (2022) Reliable T-gate Process for THz HEMTs. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Dhongde, A., Elksne, M. , Karami, K. and Wasige, E. (2022) Comparative Study of AlGaN/GaN HEMTs with and without the Buffer on SiC Substrates. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Karami, K. , Dhongde, A., Cheng, H., Reynolds, P. M. , Thoms, S. , Reddy, B. A., Ritter, D., Li, C. and Wasige, E. (2022) Robust sub-100 nm T-gate fabrication process using multi-step development. MNE EUROSENSORS 2022, Leuven, Belgium, 19-23 September 2022. (Accepted for Publication)

Dhongde, A., Taking, S., Elksne, M. , Ofiare, A., Karami, K. , Dwidar, M., Al-Khalidi, A. and Wasige, E. (2022) High Performance of AlGaN/GaN HEMTs using Buffer-Free GaN on SiC Structure. 45th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits, Ponta Delgada (São Miguel island – Azores), Portugal, 3-6 May 2022.

Karami, K. , Taking, S., Ofiare, A., Elksne, M. , Dhongde, A., Al-Khalidi, A. and Wasige, E. (2022) Investigation of Al2O3, Si3N4 and SiO2 Used for Surface Passivation and Gate Dielectric on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors. WOCSDICE EXMATEC 2022, Ponta Delgada (São Miguel island–Azores), 3-6 May 2022.

2021

Dhongde, A., Taking, S., Elksne, M. , Samanta, S. , Ofiare, A., Karami, K. , Al-Khalidi, A. and Wasige, E. (2021) The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs. International Journal of Nanoelectronics and Materials, 14, pp. 21-28.

Ofiare, A., Taking, S., Karami, K. , Dhongde, A., Al-Khalidi, A. and Wasige, E. (2021) Investigation of plasma induced etch damage/changes in AlGaN/GaN HEMTs. International Journal of Nanoelectronics and Materials, 14, pp. 29-36.

Karami, K. , Taking, S., Dhongde, A., Ofiare, A., Al-Khalidi, A. and Wasige, E. (2021) Heavily doped n++ GaN cap layer AlN/GaN metal oxide semiconductor high electron mobility transistor. International Journal of Nanoelectronics and Materials, 14, pp. 45-51.

Karami, K. , Taking, S., Ofiare, A., Dhongde, A., Al-Khalidi, A. and Wasige, E. (2021) High performance of n++GaN/AlN/GaN high electron mobility transistor. 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE), Bristol, UK, 14-17 June 2021.

This list was generated on Wed Dec 7 05:22:07 2022 GMT.
Number of items: 10.

Articles

Dhongde, A., Taking, S., Elksne, M. , Samanta, S. , Ofiare, A., Karami, K. , Al-Khalidi, A. and Wasige, E. (2021) The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs. International Journal of Nanoelectronics and Materials, 14, pp. 21-28.

Ofiare, A., Taking, S., Karami, K. , Dhongde, A., Al-Khalidi, A. and Wasige, E. (2021) Investigation of plasma induced etch damage/changes in AlGaN/GaN HEMTs. International Journal of Nanoelectronics and Materials, 14, pp. 29-36.

Karami, K. , Taking, S., Dhongde, A., Ofiare, A., Al-Khalidi, A. and Wasige, E. (2021) Heavily doped n++ GaN cap layer AlN/GaN metal oxide semiconductor high electron mobility transistor. International Journal of Nanoelectronics and Materials, 14, pp. 45-51.

Conference or Workshop Item

Cheng, H., Dhongde, A., Karami, K. , Reynolds, P. , Thoms, S. , Wasige, E. and Li, C. (2022) Reliable T-gate Process for THz HEMTs. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Dhongde, A., Elksne, M. , Karami, K. and Wasige, E. (2022) Comparative Study of AlGaN/GaN HEMTs with and without the Buffer on SiC Substrates. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Karami, K. , Dhongde, A., Cheng, H., Reynolds, P. M. , Thoms, S. , Reddy, B. A., Ritter, D., Li, C. and Wasige, E. (2022) Robust sub-100 nm T-gate fabrication process using multi-step development. MNE EUROSENSORS 2022, Leuven, Belgium, 19-23 September 2022. (Accepted for Publication)

Dhongde, A., Taking, S., Elksne, M. , Ofiare, A., Karami, K. , Dwidar, M., Al-Khalidi, A. and Wasige, E. (2022) High Performance of AlGaN/GaN HEMTs using Buffer-Free GaN on SiC Structure. 45th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits, Ponta Delgada (São Miguel island – Azores), Portugal, 3-6 May 2022.

Karami, K. , Taking, S., Ofiare, A., Elksne, M. , Dhongde, A., Al-Khalidi, A. and Wasige, E. (2022) Investigation of Al2O3, Si3N4 and SiO2 Used for Surface Passivation and Gate Dielectric on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors. WOCSDICE EXMATEC 2022, Ponta Delgada (São Miguel island–Azores), 3-6 May 2022.

Karami, K. , Taking, S., Ofiare, A., Dhongde, A., Al-Khalidi, A. and Wasige, E. (2021) High performance of n++GaN/AlN/GaN high electron mobility transistor. 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE), Bristol, UK, 14-17 June 2021.

Conference Proceedings

Karami, K. , Hassan, S., Taking, S., Ofiare, A., Dhongde, A., Al-Khalidi, A. and Wasige, E. (2022) Comparative Study of Al2O3 and HfO2 as gate dielectric on AlGaN/GaN MOSHEMTs. In: 16th International Conference on Nitride Semiconductors (ICNS 2022), Dubai, United Arab Emirates, 10-11 Nov 2022, (Accepted for Publication)

This list was generated on Wed Dec 7 05:22:07 2022 GMT.