Dr Jayjit Mukherjee
- Research Associate (Electronic & Nanoscale Engineering)
Biography
I am a Post-doctoral Research Associate in the Advanced Semiconductor Materials and Devices (ASMaD) Group led by Prof. David Moran at the University of Glasgow. I am currently working on an EPSRC-SFI funded Aluminium Rich Nitride Electronics (ARNE) Project. The main focus area is the development of Aluminium-rich channel High Electron Mobility Transistors (HEMTs) for RF applications.
I have completed my M.Sc. (Electronics) from Jadavpur University, India in 2015 and have been awarded Ph.D. (Physics) degree from the Indian Institute of Technology Delhi in 2023. My doctoral thesis investigated carrier trapping effects in AlGaN/GaN HEMTs under the influence of electrical and thermal stress.
Research interests
- Wide bandgap Semiconductors
- III-N High Electron Mobility Transistors (HEMTs)
- Fabrication
- Electrical characterization of devices
- Material characterization
- Experimental defect analysis
Publications
2026
Pampili, P., Zubialevich, V. Z., Mondal, B., Mukherjee, J., Schulz, S., Moran, D. A. J. 
ORCID: https://orcid.org/0000-0003-4085-7650 and Parbrook, P. J.
(2026)
Barrier–channel intermixing and 2-dimensional electron gas degradation in Al-rich Al(Ga)N/AlGaN high electron mobility transistor heterostructures.
Applied Physics Letters, 128(26),
262108.
(doi: 10.1063/5.0325471)
2025
Mondal, Badal, Pampili, Pietro, Mukherjee, Jayjit, Moran, David ORCID: https://orcid.org/0000-0003-4085-7650, Parbrook, Peter James and Schulz, Stefan
(2025)
Interplay of carrier density and mobility in Al-rich (Al,Ga)N-channel HEMTs: Impact on high-power device performance potential.
APL Electronic Devices, 1(2),
026117.
(doi: 10.1063/5.0277051)
Articles
Pampili, P., Zubialevich, V. Z., Mondal, B., Mukherjee, J., Schulz, S., Moran, D. A. J. ORCID: https://orcid.org/0000-0003-4085-7650 and Parbrook, P. J.
(2026)
Barrier–channel intermixing and 2-dimensional electron gas degradation in Al-rich Al(Ga)N/AlGaN high electron mobility transistor heterostructures.
Applied Physics Letters, 128(26),
262108.
(doi: 10.1063/5.0325471)
Mondal, Badal, Pampili, Pietro, Mukherjee, Jayjit, Moran, David ORCID: https://orcid.org/0000-0003-4085-7650, Parbrook, Peter James and Schulz, Stefan
(2025)
Interplay of carrier density and mobility in Al-rich (Al,Ga)N-channel HEMTs: Impact on high-power device performance potential.
APL Electronic Devices, 1(2),
026117.
(doi: 10.1063/5.0277051)
