Dr Ismail Topaloglu
- Affiliate (School of Engineering)
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Dixit, A., Rezaei, A. , Xeni, N., Kumar, N. , Dutta, T. , Topaloglu, I. , Aleksandrov, P. , Asenov, A. and Georgiev, V. (2024) Unravelling the Impact of Random Dopant Fluctuations on Si-Based 3nm NSFET: A NEGF Analysis. In: IEEE 24th International Conference on Nanotechnology (NANO), Gijon, Spain, 08-11 Jul 2024, pp. 5-8. ISBN 9798350386240 (doi: 10.1109/NANO61778.2024.10628880)
Topaloglu, I. (2023) Sensitivity analysis based new numerical approach with green function for optimization. Journal of Electrical Engineering and Technology, (doi: 10.1007/s42835-023-01639-0) (Early Online Publication)
Nagy, D. , Rezaei, A. , Xeni, N., Dutta, T. , Adamu-Lema, F., Topaloglu, I. , Georgiev, V. P. and Asenov, A. (2023) Hierarchical simulation of nanosheet field effect transistor: NESS flow. Solid-State Electronics, 199, 108489. (doi: 10.1016/j.sse.2022.108489)
Topaloglu, I. (2023) Deep learning based a new approach for power quality disturbances classification in power transmission system. Journal of Electrical Engineering and Technology, 18(1), pp. 77-88. (doi: 10.1007/s42835-022-01177-1)
Topaloglu, I. (2023) Sensitivity analysis based new numerical approach with green function for optimization. Journal of Electrical Engineering and Technology, (doi: 10.1007/s42835-023-01639-0) (Early Online Publication)
Nagy, D. , Rezaei, A. , Xeni, N., Dutta, T. , Adamu-Lema, F., Topaloglu, I. , Georgiev, V. P. and Asenov, A. (2023) Hierarchical simulation of nanosheet field effect transistor: NESS flow. Solid-State Electronics, 199, 108489. (doi: 10.1016/j.sse.2022.108489)
Topaloglu, I. (2023) Deep learning based a new approach for power quality disturbances classification in power transmission system. Journal of Electrical Engineering and Technology, 18(1), pp. 77-88. (doi: 10.1007/s42835-022-01177-1)
Dixit, A., Rezaei, A. , Xeni, N., Kumar, N. , Dutta, T. , Topaloglu, I. , Aleksandrov, P. , Asenov, A. and Georgiev, V. (2024) Unravelling the Impact of Random Dopant Fluctuations on Si-Based 3nm NSFET: A NEGF Analysis. In: IEEE 24th International Conference on Nanotechnology (NANO), Gijon, Spain, 08-11 Jul 2024, pp. 5-8. ISBN 9798350386240 (doi: 10.1109/NANO61778.2024.10628880)
https://orcid.org/0000-0002-9599-5228