Dr Igor Marko
- Research Fellow (Electronic & Nanoscale Engineering)
email:
Ihar.Marko@glasgow.ac.uk
pronouns:
He/him/his
Publications
2024
Duffy, Dominic A. ORCID: https://orcid.org/0000-0002-7853-5107, Marko, Igor P.
ORCID: https://orcid.org/0000-0001-7568-5946, Fuchs, Christian, Stolz, Wolfgang and Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2024)
The impact of band bending on the thermal behaviour of gain in Type-II GaAs-based “W”-lasers.
Journal of Selected Topics in Quantum Electronics,
(doi: 10.1109/JSTQE.2024.3434566)
(Early Online Publication)
Ellis, A.R., Duffy, D.A. ORCID: https://orcid.org/0000-0002-7853-5107, Marko, I.P.
ORCID: https://orcid.org/0000-0001-7568-5946, Acharya, S., Du, W., Yu, S. Q-. and Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2024)
Challenges for room temperature operation of electrically pumped GeSn lasers.
Scientific Reports, 14,
10318.
(doi: 10.1038/s41598-024-60686-3)
(PMID:38705884)
2023
Batool, Z., Hild, K., Marko, Igor ORCID: https://orcid.org/0000-0001-7568-5946, Mohmad, A.R., David, J.P.R., Lu, X., Tiedje, T. and Sweeney, Stephen .J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2023)
Effect of bismuth incorporation on recombination mechanisms in GaAsBi/GaAs heterostructures.
Journal of Materials Science: Materials in Electronics, 34,
480.
(doi: 10.1007/s10854-023-09839-0)
2022
Webb, T. et al. (2022) Correction to: A Multifaceted ferrocene interlayer for highly stable and efficient lithium doped spiro-OMeTAD-based perovskite solar cells (Advanced Energy Materials, (2022), 12, 26, (2200666), 10.1002/aenm.202200666). Advanced Energy Materials, 12(48), 2203565. (doi: 10.1002/aenm.202203565)
Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R. and Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2022)
Temperature-insensitive InP-based Quantum Well Lasers Operating in the O-band for Datacom Applications.
In: 2022 28th International Semiconductor Laser Conference (ISLC), Matsue, Japan, 6-19 Oct 2022,
ISBN 9784885523359
(doi: 10.23919/ISLC52947.2022.9943464)
Duffy, D.A., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Fuchs, C., Hepp, T., Lehr, J., Volz, K., Stolz, W. and Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2022)
Reduced Temperature-Dependence of Optical Gain in Type-II GaAs-based 'W'-Laser Structures.
In: 2022 28th International Semiconductor Laser Conference (ISLC), Matsue, Japan, 6-19 Oct 2022,
ISBN 9784885523359
(doi: 10.23919/ISLC52947.2022.9943462)
Webb, T. et al. (2022) A multifaceted ferrocene interlayer for highly stable and efficient lithium doped spiro‐OMeTAD‐based perovskite solar cells. Advanced Energy Materials, 12(26), 2200666. (doi: 10.1002/aenm.202200666)
Eales, Timothy D., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, Alf R., Andrejew, Alexander, Vizbaras, Kristijonas and Sweeney, Stephen J.
(2022)
The nature of auger recombination in type-I quantum well lasers operating in the near- and mid-infrared.
IEEE Journal of Selected Topics in Quantum Electronics, 28(1),
1501411.
(doi: 10.1109/JSTQE.2021.3111693)
2021
Eales, T.D., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R., Andrejew, A., Vizbaras, K. and Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2021)
Auger Recombination in Mid-Infrared Quantum Well Lasers.
In: 2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), Munich, Germany, 21-25 June 2021,
ISBN 9781665418768
(doi: 10.1109/CLEO/Europe-EQEC52157.2021.9542167)
2019
Eales, T. D. et al. (2019) Ge1-xSnx alloys: consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration. Scientific Reports, 9, 14077. (doi: 10.1038/s41598-019-50349-z) (PMID:31575881) (PMCID:PMC6773784)
Sharpe, M.K., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Duffy, D.A., England, J., Schneider, E., Kesaria, M., Federov, V., Clarke, E., Tan, C.H. and Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2019)
A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques.
Journal of Applied Physics, 12,
125706.
(doi: 10.1063/1.5109653)
2018
Eales, T., Marko, Igor ORCID: https://orcid.org/0000-0001-7568-5946, Ikyo, B.A., Adams, A.R., Andrejew, A., Vizbaras, K., Amann, M.-C., Shterengas, L. and Sweeney, S.J.
(2018)
The Nature of Auger Recombination in Type-I Quantum Well Lasers Operating in the Near- and Mid-Infrared.
In: 2018 IEEE International Semiconductor Laser Conference (ISLC), Santa Fe, NM, USA, 16-19 Sep 2018,
pp. 223-224.
ISBN 9781538664865
(doi: 10.1109/ISLC.2018.8516247)
2017
Eales, Timothy D., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Ikyo, Barnabas A., Adams, Alfred R., Arafin, Shamsul, Sprengel, Stephan, Amann, Markus-Christian and Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2017)
Wavelength dependence of efficiency limiting mechanisms in Type-I Mid-Infrared GaInAsSb/GaSb lasers.
IEEE Journal of Selected Topics in Quantum Electronics, 23(6),
1500909.
(doi: 10.1109/JSTQE.2017.2687823)
Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946 and Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2017)
Progress toward III-V bismide alloys for near- and midinfrared laser diodes.
IEEE Journal of Selected Topics in Quantum Electronics, 23(6),
1501512.
(doi: 10.1109/JSTQE.2017.2719403)
Eales, T., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Ikyo, B.A., Adams, A.R., Vurgaftman, I., Arafin, S., Sprengel, S., Amann, M.-C., Meyer, J.R. and Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2017)
Auger Recombination in Type I GaInAsSb/GaSb Lasers and Its Variation with Wavelength in the 2-3 μm Range.
In: The European Conference on Lasers and Electro-Optics 2017, Munich, Germany, 25–29 Jun 2017,
ISBN 9781509067367
Broderick, C. A. et al. (2017) GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics. Scientific Reports, 7, 46371. (doi: 10.1038/srep46371)
2016
Eales, Timothy, Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Ikyo, Barnabas A., Adams, Alf R., Arafin, Shamsul, Sprengel, Stephan, Amann, Markus-C. and Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2016)
Wavelength Dependence of Efficiency Limiting Mechanisms in Type I GaInAsSb/GaSb Lasers Emitting in the Mid-infrared.
In: 2016 International Semiconductor Laser Conference (ISLC), Kobe, Japan, 12-15 Sep 2016,
ISBN 9784885523069
Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Broderick, Christopher A., Jin, Shirong, Ludewig, Peter, Stolz, Wolfgang, Volz, Kerstin, Rorison, Judy M., O'Reilly, Eoin P. and Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2016)
Optical Gain in GaAsBi/GaAs Quantum Well Diode Lasers.
In: 2016 International Semiconductor Laser Conference (ISLC), Kobe, Japan, 12-15 Sep 2016,
ISBN 9784885523069
Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Broderick, Christopher A., Jin, Shirong, Ludewig, Peter, Stolz, Wolfgang, Volz, Kerstin, Rorison, Judy M., O'Reilly, Eoin P. and Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2016)
Optical gain in GaAsBi/GaAs quantum well diode lasers.
Scientific Reports, 6,
28863.
(doi: 10.1038/srep28863)
(PMID:27363930)
(PMCID:PMC4929443)
Broderick, Christopher A., Rorison, Judy M., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071 and O'Reilly, Eoin P.
(2016)
GaAs-based Dilute Bismide Semiconductor Lasers: Theory Vs. Experiment.
In: 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Sydney, NSW, Australia, 11-15 Jul 2016,
pp. 209-210.
ISBN 9781467386036
(doi: 10.1109/NUSOD.2016.7546999)
Ikyo, A.B., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Hild, K.
ORCID: https://orcid.org/0009-0008-1593-112X, Adams, A.R., Arafin, S., Amann, M.-C. and Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2016)
Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs).
Scientific Reports, 6,
19595.
(doi: 10.1038/srep19595)
(PMID:26781492)
(PMCID:PMC4726019)
2015
Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Marko, I.P.
ORCID: https://orcid.org/0000-0001-7568-5946, Jin, S.R., Hild, K.
ORCID: https://orcid.org/0009-0008-1593-112X and Batool, Z.
(2015)
Bismuth-based semiconductors for mid-infrared photonic devices.
In: 2015 IEEE Summer Topicals Meeting Series (SUM), Nassau, Bahamas, 13-15 Jul 2015,
pp. 181-182.
ISBN 9781479974689
(doi: 10.1109/PHOSST.2015.7248257)
Marko, I.P. et al. (2015) Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers. Semiconductor Science and Technology, 30, 094008. (doi: 10.1088/0268-1242/30/9/094008)
Read, Graham William, Marko, Igor Pavlovich ORCID: https://orcid.org/0000-0001-7568-5946, Hossain, Nadir and Sweeney, Stephen John
ORCID: https://orcid.org/0000-0001-8561-6071
(2015)
Physical properties and characteristics of III-V lasers on silicon.
IEEE Journal of Selected Topics in Quantum Electronics, 21(6),
1502208.
(doi: 10.1109/JSTQE.2015.2424923)
Adams, Alfred R., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Mukherjee, Jayanta, Stolojan, Vlad, Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071, Gocalinska, Agnieszka, Pelucchi, Emanuele, Thomas, Kevin and Corbett, Brian
(2015)
Semiconductor quantum well lasers with a temperature-insensitive threshold current.
IEEE Journal of Selected Topics in Quantum Electronics, 21(6),
1500806.
(doi: 10.1109/JSTQE.2015.2413403)
Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946 and Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2015)
Optical and electronic processes in semiconductor materials for device applications.
In: Singh, J. and Williams, R.T. (eds.)
Excitonic and Photonic Processes in Materials.
Series: Springer series in materials science (203).
Springer: Singapore, pp. 253-297.
ISBN 9789812871312
(doi: 10.1007/978-981-287-131-2_9)
2014
Adams, A.R., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Mukherjee, J., Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071, Gocalinska, A., Pelucchi, E. and Corbett, B.
(2014)
Semiconductor Quantum Well Lasers with a Temperature Insensitive Threshold Current.
In: 2014 International Semiconductor Laser Conference, Palma de Mallorca, Spain, 7-10 Sep 2014,
pp. 82-83.
ISBN 9781479957217
(doi: 10.1109/ISLC.2014.174)
Sweeney, S.J. et al. (2014) Electrically Injected GaAsBi Quantum Well Lasers. In: 2014 International Semiconductor Laser Conference, Palma de Mallorca, Spain, 07-10 Sep 2014, pp. 80-81. ISBN 9781479957217 (doi: 10.1109/ISLC.2014.173)
Marko, I.P. et al. (2014) Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi. Journal of Physics D: Applied Physics, 47, 345103. (doi: 10.1088/0022-3727/47/34/345103)
Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R., Massé, N.F. and Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2014)
Effect of non-pinned carrier density above threshold in InAs quantum dot and quantum dash lasers.
IET Optoelectronics, 8(2),
pp. 88-93.
(doi: 10.1049/iet-opt.2013.0055)
Chai, G.M.T., Hosea, T.J.C., Fox, N.E., Hild, K. ORCID: https://orcid.org/0009-0008-1593-112X, Ikyo, A.B., Marko, I.P.
ORCID: https://orcid.org/0000-0001-7568-5946, Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071, Bachmann, A., Arafin, S. and Amann, M.-C.
(2014)
Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance.
Journal of Applied Physics, 115(1),
013102.
(doi: 10.1063/1.4861146)
2013
Hild, K. ORCID: https://orcid.org/0009-0008-1593-112X, Batool, Z., Jin, S.R., Hossain, N., Marko, I.P.
ORCID: https://orcid.org/0000-0001-7568-5946, Hosea, T.J.C., Lu, X., Tiedje, T. and Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2013)
Auger Recombination Suppression and Band Alignment in GaAsBi/GaAs Heterostructures.
In: 31st International Conference on the Physics of Semiconductors (ICPS) 2012, Zurich, Switzerland, 29 Jul–3 Aug 2012,
pp. 488-489.
ISBN 9780735411944
(doi: 10.1063/1.4848498)
Crutchley, Benjamin G., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946 and Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2013)
The influence of temperature on the recombination processes in blue and green InGaN LEDs.
Physica Status Solidi C, 10(11),
pp. 1533-1536.
(doi: 10.1002/pssc.201300360)
Pal, J., Migliorato, M.A., Li, C.-K., Wu, Y.-R., Crutchley, B.G., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946 and Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2013)
Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management.
Journal of Applied Physics, 114(7),
073104.
(doi: 10.1063/1.4818794)
Ludewig, P. et al. (2013) Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser. Applied Physics Letters, 102(24), 242115. (doi: 10.1063/1.4811736)
Crutchley, Benjamin G., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, Alf R. and Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2013)
Investigating the Efficiency Limitations of GaN-based Emitters.
In: 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC, Munich, Germany, 12-16 May 2013,
ISBN 9781479905942
(doi: 10.1109/CLEOE-IQEC.2013.6801007)
Ikyo, Barnabas A., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Hild, Konstanze
ORCID: https://orcid.org/0009-0008-1593-112X, Adams, Alfred R., Arafin, Shamsul, Amann, Marcus-C. and Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2013)
The effect of hole leakage and auger recombination on the temperature sensitivity of GaInAsSb/GaSb mid-infrared lasers.
In: 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC, Munich, Germany, 12-16 May 2013,
ISBN 9781479905942
(doi: 10.1109/cleoe-iqec.2013.6800690)
Aldukhayel, A., Jin, S.R., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Zhang, S.Y., Revin, D.G., Cockburn, J.W. and Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2013)
Investigations of carrier scattering into L-valley in λ=3.5μm InGaAs/AlAs(Sb) quantum cascade lasers using high hydrostatic pressure.
Physica Status Solidi B: Basic Solid State Physics, 250(4),
pp. 693-697.
(doi: 10.1002/pssb.201200848)
Crutchley, B.G., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Pal, J., Migliorato, M.A. and Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2013)
Optical properties of InGaN-based LEDs investigated using high hydrostatic pressure dependent techniques.
Physica Status Solidi B: Basic Solid State Physics, 250(4),
pp. 698-702.
(doi: 10.1002/pssb.201200514)
2012
Marko, I.P. et al. (2012) Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications. Applied Physics Letters, 101(22), 221108. (doi: 10.1063/1.4768532)
Reed, G.T. et al. (2012) High performance silicon optical modulators. In: Photonics Asia 2012: Nanophotonics and Micro/Nano Optics, Beijing, China, 5-7 Nov 2012, ISBN 9780819493194 (doi: 10.1117/12.2001296)
Hosea, T.J.C. et al. (2012) InGaBiAs/InP Semiconductors for Mid-infrared Applications: Dependence of Bandgap and Spin-orbit Splitting on Temperature and Bismuth Content. In: 2012 IEEE 3rd International Conference on Photonics, Pulau Pinang, Malaysia, 1-3 Oct 2012, pp. 154-158. ISBN 9781467314633 (doi: 10.1109/ICP.2012.6379872)
Tan, S.L. et al. (2012) Improved optoelectronic properties of rapid thermally annealed dilute nitride GaInNAs photodetectors. Journal of Electronic Materials, 41(12), pp. 3393-3401. (doi: 10.1007/s11664-012-2245-9)
Blume, G., Hild, K. ORCID: https://orcid.org/0009-0008-1593-112X, Marko, I.P.
ORCID: https://orcid.org/0000-0001-7568-5946, Hosea, T.J.C., Yu, S.-Q., Chaparro, S.A., Samal, N., Johnson, S.R., Zhang, Y.-H. and Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2012)
Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements.
Journal of Applied Physics, 112(3),
033108.
(doi: 10.1063/1.4744985)
Hossain, N., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Jin, S.R., Hild, K.
ORCID: https://orcid.org/0009-0008-1593-112X, Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071, Lewis, R.B., Beaton, D.A. and Tiedje, T.
(2012)
Recombination mechanisms and band alignment of GaAs1-xBi x/GaAs light emitting diodes.
Applied Physics Letters, 100(5),
051105.
(doi: 10.1063/1.3681139)
2011
Lever, L. et al. (2011) Modulation of the absorption coefficient at 1:3μm in Ge/SiGe multiple quantum well heterostructures on silicon. Optics Letters, 36(21), pp. 4158-4160. (doi: 10.1364/OL.36.004158) (PMID:22048350)
Cheetham, K.J., Krier, A., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Aldukhayel, A. and Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2011)
Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes.
Applied Physics Letters, 99(14),
141110.
(doi: 10.1063/1.3646910)
Lever, L. et al. (2011) Strain Engineering of the Electroabsorption Response in Ge/SiGe Multiple Quantum Well Heterostructures. In: 8th IEEE International Conference on Group IV Photonics, GFP 2011, London, UK, 4-16 Sep 2011, pp. 107-108. ISBN 9781424483389 (doi: 10.1109/GROUP4.2011.6053731)
Hild, K. ORCID: https://orcid.org/0009-0008-1593-112X, Marko, I.P.
ORCID: https://orcid.org/0000-0001-7568-5946, Johnson, S.R., Yu, S.-Q., Zhang, Y.-H. and Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2011)
Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 μm GaAsSb/GaAs vertical cavity surface emitting lasers.
Applied Physics Letters, 99(7),
071110.
(doi: 10.1063/1.3625938)
Ikyo, B.A., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R., Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071, Canedy, C.L., Vurgaftman, I., Kim, C.S., Kim, M., Bewley, W.W. and Meyer, J.R.
(2011)
Temperature dependence of 4.1 μm mid-infrared type II "w" interband cascade lasers.
Applied Physics Letters, 99(2),
021102.
(doi: 10.1063/1.3606533)
Tan, S. L. et al. (2011) GaInNAsSb/GaAs photodiodes for long-wavelength applications. IEEE Electron Device Letters, 32(7), pp. 919-921. (doi: 10.1109/LED.2011.2145351)
2010
Sayid, Sayid A., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071, Barrios, Pedro and Poole, Philip J.
(2010)
Efficiency limiting processes in 1.55 μm InAs/InP-based quantum dots lasers.
Applied Physics Letters, 97(16),
161104.
(doi: 10.1063/1.3504253)
Crutchley, Benjamin G., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, Alf R. and Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2010)
Efficiency Limitations of Green InGaN LEDs and Laser Diodes.
In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010,
pp. 27-28.
ISBN 9781424456840
(doi: 10.1109/ISLC.2010.5642770)
Ikyo, Barnabas A., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, Alf R., Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071, Canedy, Chadwick L., Vurgaftman, Igor, Kim, Chul Soo, Kim, Mijin, Bewley, William W. and Meyer, Jerry R.
(2010)
Temperature Sensitivity of Mid-infrared Type II "W" Interband Cascade Lasers (ICL) Emitting at 4.1μm at Room Temperature.
In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010,
pp. 41-42.
ISBN 9781424456840
(doi: 10.1109/ISLC.2010.5642761)
Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Aldukhayel, A.M., Adams, A.R., Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071, Teissier, R., Baranov, A.N. and Tomić, S.
(2010)
Physical Properties of Short Wavelength 2.6μm InAs/AlSb-based Quantum Cascade Lasers.
In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010,
pp. 95-96.
ISBN 9781424456840
(doi: 10.1109/ISLC.2010.5642736)
Sayid, Sayid A., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, Alfred R., Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071, Barrios, Pedro and Poole, Philip
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Thermal Behavior of 1.55 μm (100) InAs/InP-based Quantum Dot Lasers.
In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010,
pp. 75-76.
ISBN 9781424456840
(doi: 10.1109/ISLC.2010.5642746)
Tan, S.L., Tan, L.J.J., Goh, Y.L., Zhang, S., Ng, J.S., David, J.P.R., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Allam, J., Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071 and Adams, A.R.
(2010)
Reduction of Dark Current and Unintentional Background Doping in InGaAsN Photodetectors by Ex Situ Annealing.
In: SPIE Optical Sensing and Detection 2010, Brussels, Belgium, 12-15 Apr 2010,
ISBN 9780819481993
(doi: 10.1117/12.853912)
Sayid, Sayid Ally, Marko, Igor Pavlovich ORCID: https://orcid.org/0000-0001-7568-5946, Cannard, Paul J., Chen, Xin, Rivers, Lesley J., Lealman, Ian F. and Sweeney, Stephen John
ORCID: https://orcid.org/0000-0001-8561-6071
(2010)
Thermal Characteristics of 1.55 μm InGaAlAs Quantum Well Buried Heterostructure Lasers.
IEEE Journal of Quantum Electronics, 46(5),
pp. 700-705.
(doi: 10.1109/JQE.2009.2039117)
Sayid, Sayid A., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071 and Poole, Philip
(2010)
Temperature Sensitivity of 1.55μm (100) InAs/InP-based Quantum Dot Lasers.
In: 22nd International Conference on Indium Phosphide and Related Materials (IPRM), Takamatsu, Japan, 31 May-4 Jun 2010,
pp. 23-24.
ISBN 9781424459223
(doi: 10.1109/ICIPRM.2010.5516172)
Sayid, Sayid Ally, Marko, Igor Pavlovich ORCID: https://orcid.org/0000-0001-7568-5946, Cannard, Paul J., Chen, Xin, Rivers, Lelsey J., Lealman, Ian F. and Sweeney, Stephen John
ORCID: https://orcid.org/0000-0001-8561-6071
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Thermal Performance of 1.55μm InGaAlAs Quantum Well Buried Heterostructure Lasers.
In: 22nd International Conference on Indium Phosphide and Related Materials (IPRM), Takamatsu, Japan, 31 May-4 Jun 2010,
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ISBN 9781424459223
(doi: 10.1109/ICIPRM.2010.5516088)
2009
Ikyo, A.B., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R., Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071, Bachmann, A., Kashani-Shirazi, K. and Amann, M.-C.
(2009)
Gain peak-cavity mode alignment optimisation in buried tunnel junction mid-infrared GaSb vertical cavity surface emitting lasers using hydrostatic pressure.
IET Optoelectronics, 3(6),
pp. 305-309.
(doi: 10.1049/iet-opt.2009.0045)
Tan, L.J.J. et al. (2009) Dark current mechanisms in InxGa1-xAs1-yNy. In: 2009 IEEE LEOS Annual Meeting Conference Proceedings, Belek-Antalya, Turkey, 4-8 Oct 2009, pp. 233-234. ISBN 9781424436804 (doi: 10.1109/LEOS.2009.5343290)
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In: CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, Munich, Germany, 14-19 June 2009,
ISBN 9781424440795
(doi: 10.1109/CLEOE-EQEC.2009.5193611)
Crowley, Mark Thomas, Marko, Igor Pavlovich ORCID: https://orcid.org/0000-0001-7568-5946, Massé, Nicolas F., Andreev, Aleksey D., Tomic, Stanko, Sweeney, Stephen John
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(2009)
The importance of recombination via excited states in inAs/GaAs 1.3μm quantum-dot lasers.
IEEE Journal of Selected Topics in Quantum Electronics, 15(3),
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(doi: 10.1109/JSTQE.2009.2015679)
Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, Alfred R., Sweeney, Stephen J.
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(2009)
Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressure.
Physica Status Solidi B: Basic Solid State Physics, 246(3),
pp. 512-515.
(doi: 10.1002/pssb.200880501)
Adams, A.R., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Sweeney, S.J.
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The Effect of Hydrostatic Pressure on the Operation of Quantum Cascade Lasers.
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(doi: 10.1117/12.814322)
Massé, N.F., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R. and Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071
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Temperature insensitive quantum dot lasers: Are we really there yet?
Journal of Materials Science: Materials in Electronics, 20(SUPPL.),
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Crowley, M.T., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Masse, N.F., Andreev, A.D., Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071, O'Reilly, E.P. and Adams, A.R.
(2008)
The importance of recombination via excited states in InAs/GaAs 1.3μm quantum dot lasers.
In: 2008 IEEE 21st International Semiconductor Laser Conference, Sorrento, Italy, 14-18 Sep 2008,
pp. 117-118.
ISBN 9781424417827
(doi: 10.1109/ISLC.2008.4636037)
Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R., Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071, Teissier, R., Baranov, A.N. and Tomic, S.
(2008)
Gamma-L scattering in InAs-based quantum cascade lasers studied using high hydrostatic pressure.
In: 2008 IEEE 21st International Semiconductor Laser Conference, Sorrento, Italy, 14-18 Sep 2008,
pp. 47-48.
ISBN 9781424417827
(doi: 10.1109/ISLC.2008.4636002)
Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Hild, K.
ORCID: https://orcid.org/0009-0008-1593-112X, Marko, I.P.
ORCID: https://orcid.org/0000-0001-7568-5946, Yu, S.-Q., Johnson, S.R. and Zhang, Y.-H.
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Thermal characteristics of 1.3μm GaAsSb/GaAs-based edge- and surface-emitting lasers.
In: 2008 IEEE 21st International Semiconductor Laser Conference, Sorrento, Italy, 14-18 Sep 2008,
pp. 83-84.
ISBN 9781424417827
(doi: 10.1109/ISLC.2008.4636020)
Lealman, I., Dosanjh, S., Rivers, L., O'Brien, S., Cannard, P., Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Marko, I.P.
ORCID: https://orcid.org/0000-0001-7568-5946 and Rushworth, S.
(2008)
Reliable 1550nm SI BH lasers fabricated using an improved Ru precursor.
In: 20th International Conference on Indium Phosphide and Related Materials, Versailles, France, 25-29 May 2008,
ISBN 9781424422586
(doi: 10.1109/ICIPRM.2008.4702913)
2007
Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R., Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071, Whitbread, N.D., Ward, A.J., Asplin, B. and Robbins, D.J.
(2007)
The influence of carrier density non-pinning on the output power of 1.55 μm lasers at high temperature.
In: 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference, Munich, Germany, 17-22 Jun 2007,
ISBN 9781424409303
(doi: 10.1109/CLEOE-IQEC.2007.4385984)
Hild, K. ORCID: https://orcid.org/0009-0008-1593-112X, Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071, Marko, I.P.
ORCID: https://orcid.org/0000-0001-7568-5946, Jin, S.R., Johnson, S.R., Chaparro, S.A., Yu, S. and Zhang, Y.-H.
(2007)
Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers.
Physica Status Solidi B: Basic Solid State Physics, 244(1),
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(doi: 10.1002/pssb.200672571)
Marko, I.P. et al. (2007) Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure. Physica Status Solidi B: Basic Solid State Physics, 244(1), pp. 82-86. (doi: 10.1002/pssb.200672544)
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Broderick, C. A. et al. (2017) GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics. Scientific Reports, 7, 46371. (doi: 10.1038/srep46371)
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Optical gain in GaAsBi/GaAs quantum well diode lasers.
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Semiconductor quantum well lasers with a temperature-insensitive threshold current.
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Effect of non-pinned carrier density above threshold in InAs quantum dot and quantum dash lasers.
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Thermal Characteristics of 1.55 μm InGaAlAs Quantum Well Buried Heterostructure Lasers.
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pp. 305-309.
(doi: 10.1049/iet-opt.2009.0045)
Crowley, Mark Thomas, Marko, Igor Pavlovich ORCID: https://orcid.org/0000-0001-7568-5946, Massé, Nicolas F., Andreev, Aleksey D., Tomic, Stanko, Sweeney, Stephen John
ORCID: https://orcid.org/0000-0001-8561-6071, O'Reilly, Eoin P. and Adams, Alfred R.
(2009)
The importance of recombination via excited states in inAs/GaAs 1.3μm quantum-dot lasers.
IEEE Journal of Selected Topics in Quantum Electronics, 15(3),
pp. 799-807.
(doi: 10.1109/JSTQE.2009.2015679)
Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, Alfred R., Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071, Teissier, Roland, Baranov, Alexei N. and Tomić, Stanko
(2009)
Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressure.
Physica Status Solidi B: Basic Solid State Physics, 246(3),
pp. 512-515.
(doi: 10.1002/pssb.200880501)
Massé, N.F., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R. and Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2009)
Temperature insensitive quantum dot lasers: Are we really there yet?
Journal of Materials Science: Materials in Electronics, 20(SUPPL.),
pp. 272-276.
(doi: 10.1007/s10854-008-9574-8)
Hild, K. ORCID: https://orcid.org/0009-0008-1593-112X, Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071, Marko, I.P.
ORCID: https://orcid.org/0000-0001-7568-5946, Jin, S.R., Johnson, S.R., Chaparro, S.A., Yu, S. and Zhang, Y.-H.
(2007)
Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers.
Physica Status Solidi B: Basic Solid State Physics, 244(1),
pp. 197-202.
(doi: 10.1002/pssb.200672571)
Marko, I.P. et al. (2007) Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure. Physica Status Solidi B: Basic Solid State Physics, 244(1), pp. 82-86. (doi: 10.1002/pssb.200672544)
Book Sections
Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946 and Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2015)
Optical and electronic processes in semiconductor materials for device applications.
In: Singh, J. and Williams, R.T. (eds.)
Excitonic and Photonic Processes in Materials.
Series: Springer series in materials science (203).
Springer: Singapore, pp. 253-297.
ISBN 9789812871312
(doi: 10.1007/978-981-287-131-2_9)
Conference Proceedings
Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R. and Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2022)
Temperature-insensitive InP-based Quantum Well Lasers Operating in the O-band for Datacom Applications.
In: 2022 28th International Semiconductor Laser Conference (ISLC), Matsue, Japan, 6-19 Oct 2022,
ISBN 9784885523359
(doi: 10.23919/ISLC52947.2022.9943464)
Duffy, D.A., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Fuchs, C., Hepp, T., Lehr, J., Volz, K., Stolz, W. and Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2022)
Reduced Temperature-Dependence of Optical Gain in Type-II GaAs-based 'W'-Laser Structures.
In: 2022 28th International Semiconductor Laser Conference (ISLC), Matsue, Japan, 6-19 Oct 2022,
ISBN 9784885523359
(doi: 10.23919/ISLC52947.2022.9943462)
Eales, T.D., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R., Andrejew, A., Vizbaras, K. and Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2021)
Auger Recombination in Mid-Infrared Quantum Well Lasers.
In: 2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), Munich, Germany, 21-25 June 2021,
ISBN 9781665418768
(doi: 10.1109/CLEO/Europe-EQEC52157.2021.9542167)
Eales, T., Marko, Igor ORCID: https://orcid.org/0000-0001-7568-5946, Ikyo, B.A., Adams, A.R., Andrejew, A., Vizbaras, K., Amann, M.-C., Shterengas, L. and Sweeney, S.J.
(2018)
The Nature of Auger Recombination in Type-I Quantum Well Lasers Operating in the Near- and Mid-Infrared.
In: 2018 IEEE International Semiconductor Laser Conference (ISLC), Santa Fe, NM, USA, 16-19 Sep 2018,
pp. 223-224.
ISBN 9781538664865
(doi: 10.1109/ISLC.2018.8516247)
Eales, T., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Ikyo, B.A., Adams, A.R., Vurgaftman, I., Arafin, S., Sprengel, S., Amann, M.-C., Meyer, J.R. and Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2017)
Auger Recombination in Type I GaInAsSb/GaSb Lasers and Its Variation with Wavelength in the 2-3 μm Range.
In: The European Conference on Lasers and Electro-Optics 2017, Munich, Germany, 25–29 Jun 2017,
ISBN 9781509067367
Eales, Timothy, Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Ikyo, Barnabas A., Adams, Alf R., Arafin, Shamsul, Sprengel, Stephan, Amann, Markus-C. and Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2016)
Wavelength Dependence of Efficiency Limiting Mechanisms in Type I GaInAsSb/GaSb Lasers Emitting in the Mid-infrared.
In: 2016 International Semiconductor Laser Conference (ISLC), Kobe, Japan, 12-15 Sep 2016,
ISBN 9784885523069
Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Broderick, Christopher A., Jin, Shirong, Ludewig, Peter, Stolz, Wolfgang, Volz, Kerstin, Rorison, Judy M., O'Reilly, Eoin P. and Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2016)
Optical Gain in GaAsBi/GaAs Quantum Well Diode Lasers.
In: 2016 International Semiconductor Laser Conference (ISLC), Kobe, Japan, 12-15 Sep 2016,
ISBN 9784885523069
Broderick, Christopher A., Rorison, Judy M., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071 and O'Reilly, Eoin P.
(2016)
GaAs-based Dilute Bismide Semiconductor Lasers: Theory Vs. Experiment.
In: 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Sydney, NSW, Australia, 11-15 Jul 2016,
pp. 209-210.
ISBN 9781467386036
(doi: 10.1109/NUSOD.2016.7546999)
Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Marko, I.P.
ORCID: https://orcid.org/0000-0001-7568-5946, Jin, S.R., Hild, K.
ORCID: https://orcid.org/0009-0008-1593-112X and Batool, Z.
(2015)
Bismuth-based semiconductors for mid-infrared photonic devices.
In: 2015 IEEE Summer Topicals Meeting Series (SUM), Nassau, Bahamas, 13-15 Jul 2015,
pp. 181-182.
ISBN 9781479974689
(doi: 10.1109/PHOSST.2015.7248257)
Adams, A.R., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Mukherjee, J., Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071, Gocalinska, A., Pelucchi, E. and Corbett, B.
(2014)
Semiconductor Quantum Well Lasers with a Temperature Insensitive Threshold Current.
In: 2014 International Semiconductor Laser Conference, Palma de Mallorca, Spain, 7-10 Sep 2014,
pp. 82-83.
ISBN 9781479957217
(doi: 10.1109/ISLC.2014.174)
Sweeney, S.J. et al. (2014) Electrically Injected GaAsBi Quantum Well Lasers. In: 2014 International Semiconductor Laser Conference, Palma de Mallorca, Spain, 07-10 Sep 2014, pp. 80-81. ISBN 9781479957217 (doi: 10.1109/ISLC.2014.173)
Hild, K. ORCID: https://orcid.org/0009-0008-1593-112X, Batool, Z., Jin, S.R., Hossain, N., Marko, I.P.
ORCID: https://orcid.org/0000-0001-7568-5946, Hosea, T.J.C., Lu, X., Tiedje, T. and Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2013)
Auger Recombination Suppression and Band Alignment in GaAsBi/GaAs Heterostructures.
In: 31st International Conference on the Physics of Semiconductors (ICPS) 2012, Zurich, Switzerland, 29 Jul–3 Aug 2012,
pp. 488-489.
ISBN 9780735411944
(doi: 10.1063/1.4848498)
Crutchley, Benjamin G., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, Alf R. and Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2013)
Investigating the Efficiency Limitations of GaN-based Emitters.
In: 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC, Munich, Germany, 12-16 May 2013,
ISBN 9781479905942
(doi: 10.1109/CLEOE-IQEC.2013.6801007)
Ikyo, Barnabas A., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Hild, Konstanze
ORCID: https://orcid.org/0009-0008-1593-112X, Adams, Alfred R., Arafin, Shamsul, Amann, Marcus-C. and Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2013)
The effect of hole leakage and auger recombination on the temperature sensitivity of GaInAsSb/GaSb mid-infrared lasers.
In: 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC, Munich, Germany, 12-16 May 2013,
ISBN 9781479905942
(doi: 10.1109/cleoe-iqec.2013.6800690)
Reed, G.T. et al. (2012) High performance silicon optical modulators. In: Photonics Asia 2012: Nanophotonics and Micro/Nano Optics, Beijing, China, 5-7 Nov 2012, ISBN 9780819493194 (doi: 10.1117/12.2001296)
Hosea, T.J.C. et al. (2012) InGaBiAs/InP Semiconductors for Mid-infrared Applications: Dependence of Bandgap and Spin-orbit Splitting on Temperature and Bismuth Content. In: 2012 IEEE 3rd International Conference on Photonics, Pulau Pinang, Malaysia, 1-3 Oct 2012, pp. 154-158. ISBN 9781467314633 (doi: 10.1109/ICP.2012.6379872)
Lever, L. et al. (2011) Strain Engineering of the Electroabsorption Response in Ge/SiGe Multiple Quantum Well Heterostructures. In: 8th IEEE International Conference on Group IV Photonics, GFP 2011, London, UK, 4-16 Sep 2011, pp. 107-108. ISBN 9781424483389 (doi: 10.1109/GROUP4.2011.6053731)
Crutchley, Benjamin G., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, Alf R. and Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071
(2010)
Efficiency Limitations of Green InGaN LEDs and Laser Diodes.
In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010,
pp. 27-28.
ISBN 9781424456840
(doi: 10.1109/ISLC.2010.5642770)
Ikyo, Barnabas A., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, Alf R., Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071, Canedy, Chadwick L., Vurgaftman, Igor, Kim, Chul Soo, Kim, Mijin, Bewley, William W. and Meyer, Jerry R.
(2010)
Temperature Sensitivity of Mid-infrared Type II "W" Interband Cascade Lasers (ICL) Emitting at 4.1μm at Room Temperature.
In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010,
pp. 41-42.
ISBN 9781424456840
(doi: 10.1109/ISLC.2010.5642761)
Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Aldukhayel, A.M., Adams, A.R., Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071, Teissier, R., Baranov, A.N. and Tomić, S.
(2010)
Physical Properties of Short Wavelength 2.6μm InAs/AlSb-based Quantum Cascade Lasers.
In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010,
pp. 95-96.
ISBN 9781424456840
(doi: 10.1109/ISLC.2010.5642736)
Sayid, Sayid A., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, Alfred R., Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071, Barrios, Pedro and Poole, Philip
(2010)
Thermal Behavior of 1.55 μm (100) InAs/InP-based Quantum Dot Lasers.
In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010,
pp. 75-76.
ISBN 9781424456840
(doi: 10.1109/ISLC.2010.5642746)
Tan, S.L., Tan, L.J.J., Goh, Y.L., Zhang, S., Ng, J.S., David, J.P.R., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Allam, J., Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071 and Adams, A.R.
(2010)
Reduction of Dark Current and Unintentional Background Doping in InGaAsN Photodetectors by Ex Situ Annealing.
In: SPIE Optical Sensing and Detection 2010, Brussels, Belgium, 12-15 Apr 2010,
ISBN 9780819481993
(doi: 10.1117/12.853912)
Sayid, Sayid A., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Sweeney, Stephen J.
ORCID: https://orcid.org/0000-0001-8561-6071 and Poole, Philip
(2010)
Temperature Sensitivity of 1.55μm (100) InAs/InP-based Quantum Dot Lasers.
In: 22nd International Conference on Indium Phosphide and Related Materials (IPRM), Takamatsu, Japan, 31 May-4 Jun 2010,
pp. 23-24.
ISBN 9781424459223
(doi: 10.1109/ICIPRM.2010.5516172)
Sayid, Sayid Ally, Marko, Igor Pavlovich ORCID: https://orcid.org/0000-0001-7568-5946, Cannard, Paul J., Chen, Xin, Rivers, Lelsey J., Lealman, Ian F. and Sweeney, Stephen John
ORCID: https://orcid.org/0000-0001-8561-6071
(2010)
Thermal Performance of 1.55μm InGaAlAs Quantum Well Buried Heterostructure Lasers.
In: 22nd International Conference on Indium Phosphide and Related Materials (IPRM), Takamatsu, Japan, 31 May-4 Jun 2010,
pp. 265-268.
ISBN 9781424459223
(doi: 10.1109/ICIPRM.2010.5516088)
Tan, L.J.J. et al. (2009) Dark current mechanisms in InxGa1-xAs1-yNy. In: 2009 IEEE LEOS Annual Meeting Conference Proceedings, Belek-Antalya, Turkey, 4-8 Oct 2009, pp. 233-234. ISBN 9781424436804 (doi: 10.1109/LEOS.2009.5343290)
Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Ikyo, A.B., Adams, A.R., Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071, Bachmann, A., Kashani-Shirazi, K. and Amann, M.-C.
(2009)
Band-structure and gain-cavity tuning of 2.4-μm GaSb buried tunnel junction VCSELs.
In: CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, Munich, Germany, 14-19 June 2009,
ISBN 9781424440795
(doi: 10.1109/CLEOE-EQEC.2009.5193611)
Adams, A.R., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071, Teissier, R., Baranov, A.N. and Tomić, S.
(2009)
The Effect of Hydrostatic Pressure on the Operation of Quantum Cascade Lasers.
In: SPIE Quantum Cascade Lasers and Applications I, San Jose, USA, 25-28 Jan 2009,
(doi: 10.1117/12.814322)
Crowley, M.T., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Masse, N.F., Andreev, A.D., Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071, O'Reilly, E.P. and Adams, A.R.
(2008)
The importance of recombination via excited states in InAs/GaAs 1.3μm quantum dot lasers.
In: 2008 IEEE 21st International Semiconductor Laser Conference, Sorrento, Italy, 14-18 Sep 2008,
pp. 117-118.
ISBN 9781424417827
(doi: 10.1109/ISLC.2008.4636037)
Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R., Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071, Teissier, R., Baranov, A.N. and Tomic, S.
(2008)
Gamma-L scattering in InAs-based quantum cascade lasers studied using high hydrostatic pressure.
In: 2008 IEEE 21st International Semiconductor Laser Conference, Sorrento, Italy, 14-18 Sep 2008,
pp. 47-48.
ISBN 9781424417827
(doi: 10.1109/ISLC.2008.4636002)
Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Hild, K.
ORCID: https://orcid.org/0009-0008-1593-112X, Marko, I.P.
ORCID: https://orcid.org/0000-0001-7568-5946, Yu, S.-Q., Johnson, S.R. and Zhang, Y.-H.
(2008)
Thermal characteristics of 1.3μm GaAsSb/GaAs-based edge- and surface-emitting lasers.
In: 2008 IEEE 21st International Semiconductor Laser Conference, Sorrento, Italy, 14-18 Sep 2008,
pp. 83-84.
ISBN 9781424417827
(doi: 10.1109/ISLC.2008.4636020)
Lealman, I., Dosanjh, S., Rivers, L., O'Brien, S., Cannard, P., Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Marko, I.P.
ORCID: https://orcid.org/0000-0001-7568-5946 and Rushworth, S.
(2008)
Reliable 1550nm SI BH lasers fabricated using an improved Ru precursor.
In: 20th International Conference on Indium Phosphide and Related Materials, Versailles, France, 25-29 May 2008,
ISBN 9781424422586
(doi: 10.1109/ICIPRM.2008.4702913)
Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R., Sweeney, S.J.
ORCID: https://orcid.org/0000-0001-8561-6071, Whitbread, N.D., Ward, A.J., Asplin, B. and Robbins, D.J.
(2007)
The influence of carrier density non-pinning on the output power of 1.55 μm lasers at high temperature.
In: 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference, Munich, Germany, 17-22 Jun 2007,
ISBN 9781424409303
(doi: 10.1109/CLEOE-IQEC.2007.4385984)
Research datasets
2024
Aneirin, E., Duffy, D. , Marko, I., Acharya, S., Du, W., Yu, S.Q. and Sweeney, S. (2024) Challenges for room temperature operation of electrically pumped GeSn lasers. [Data Collection]