Dr Igor Marko

Research Fellow (Electronic & Nanoscale Engineering)

email: Ihar.Marko@glasgow.ac.uk
pronouns: He/him/his

Publications

List by: Type | Date

Jump to: 2025 | 2024 | 2023 | 2022 | 2021 | 2020 | 2019 | 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2009 | 2008 | 2007 | 2006 | 2005

Number of items: 106.

2025

Kozlova, O. et al. (2025) European Partnership in Metrology project: photonic and quantum sensors for practical integrated primary thermometry (PhoQuS-T). Metrology, 5(3), 44. (doi: 10.3390/metrology5030044)

Adams, Alfred R., Marko, Igor ORCID: https://orcid.org/0000-0001-7568-5946, Duffy, Dominic A. ORCID: https://orcid.org/0000-0002-7853-5107, Gerrard, Neil D. and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2025) Separated Charge O-band Semiconductor Lasers. In: 2025 IEEE Photonics Conference (IPC), Singapore, 09-13 November 2025, (Accepted for Publication)

Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Duffy, Dominic A. ORCID: https://orcid.org/0000-0002-7853-5107, Bentley, Matthew, Marshall, Andrew R.J., Rihani, Samir, Berry, Graham, Robertson, Michael, Rawsthorne, John, Carrington, Peter J. and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2025) Molecular beam epitaxy grown GaAs-based type-II ‘W’-lasers for O-band applications. Journal of Physics D: Applied Physics, 58(18), 185103. (doi: 10.1088/1361-6463/adc272)

Crump, P. A. et al. (2025) Experimental Studies of GaAs-based Broad Area Diode Lasers using Highly Asymmetric Epitaxial Structures with High Modal Gain: Finding a Path to Exceeding 80% Conversion Efficiency at 25°C. OPTO 2025. Novel In-Plane Semiconductor Lasers XXIV, San Francisco, United States, 25-30 Jan 2025. p. 47. ISBN 9781510689893 (doi: 10.1117/12.3043060)

2024

Duffy, Dominic A. ORCID: https://orcid.org/0000-0002-7853-5107, Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Fuchs, Christian, Stolz, Wolfgang and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2024) The impact of band bending on the thermal behaviour of gain in Type-II GaAs-based “W”-lasers. Journal of Selected Topics in Quantum Electronics, (doi: 10.1109/JSTQE.2024.3434566) (Early Online Publication)

Ellis, A.R., Duffy, D.A. ORCID: https://orcid.org/0000-0002-7853-5107, Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Acharya, S., Du, W., Yu, S. Q-. and Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071 (2024) Challenges for room temperature operation of electrically pumped GeSn lasers. Scientific Reports, 14, 10318. (doi: 10.1038/s41598-024-60686-3) (PMID:38705884) (PMCID:PMC11584739)

2023

Batool, Z., Hild, K., Marko, Igor ORCID: https://orcid.org/0000-0001-7568-5946, Mohmad, A.R., David, J.P.R., Lu, X., Tiedje, T. and Sweeney, Stephen .J. ORCID: https://orcid.org/0000-0001-8561-6071 (2023) Effect of bismuth incorporation on recombination mechanisms in GaAsBi/GaAs heterostructures. Journal of Materials Science: Materials in Electronics, 34, 480. (doi: 10.1007/s10854-023-09839-0)

2022

Webb, T. et al. (2022) Correction to: A Multifaceted ferrocene interlayer for highly stable and efficient lithium doped spiro-OMeTAD-based perovskite solar cells (Advanced Energy Materials, (2022), 12, 26, (2200666), 10.1002/aenm.202200666). Advanced Energy Materials, 12(48), 2203565. (doi: 10.1002/aenm.202203565)

Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R. and Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071 (2022) Temperature-insensitive InP-based Quantum Well Lasers Operating in the O-band for Datacom Applications. In: 2022 28th International Semiconductor Laser Conference (ISLC), Matsue, Japan, 6-19 Oct 2022, ISBN 9784885523359 (doi: 10.23919/ISLC52947.2022.9943464)

Duffy, D.A., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Fuchs, C., Hepp, T., Lehr, J., Volz, K., Stolz, W. and Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071 (2022) Reduced Temperature-Dependence of Optical Gain in Type-II GaAs-based 'W'-Laser Structures. In: 2022 28th International Semiconductor Laser Conference (ISLC), Matsue, Japan, 6-19 Oct 2022, ISBN 9784885523359 (doi: 10.23919/ISLC52947.2022.9943462)

Webb, T. et al. (2022) A multifaceted ferrocene interlayer for highly stable and efficient lithium doped spiro‐OMeTAD‐based perovskite solar cells. Advanced Energy Materials, 12(26), 2200666. (doi: 10.1002/aenm.202200666)

Eales, Timothy D., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, Alf R., Andrejew, Alexander, Vizbaras, Kristijonas and Sweeney, Stephen J. (2022) The nature of auger recombination in type-I quantum well lasers operating in the near- and mid-infrared. IEEE Journal of Selected Topics in Quantum Electronics, 28(1), 1501411. (doi: 10.1109/JSTQE.2021.3111693)

2021

Duffy, Dominic A., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Fuchs, Christian, Eales, Timothy D., Lehr, Jannik, Stolz, Wolfgang and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2021) Injection-And Temperature-Dependence of Type-II 1.2-1.3 µm (GaIn)As/Ga(AsSb) "W"-Lasers. In: 2021 27th International Semiconductor Laser Conference (ISLC), Potsdam, Germany, 10-14 Oct 2021, ISBN 9781665441339 (doi: 10.1109/ISLC51662.2021.9615869)

Ellis, Aneirin R., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Eales, Timothy D., Cerutti, Laurent, Calvo, Marta Rio, Bartolome, Laura Monge, Rodriguez, Jean-Baptiste, Tournie, Eric and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2021) Carrier Recombination Processes in 2.3-µm Epitaxially Grown Mid-Infrared Laser Diodes on Si(001). In: 2021 27th International Semiconductor Laser Conference (ISLC), Potsdam, Germany, 10-14 Oct 2021, ISBN 9781665441339 (doi: 10.1109/ISLC51662.2021.9615906)

Eales, T.D., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R., Andrejew, A., Vizbaras, K. and Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071 (2021) Auger Recombination in Mid-Infrared Quantum Well Lasers. In: 2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), Munich, Germany, 21-25 June 2021, ISBN 9781665418768 (doi: 10.1109/CLEO/Europe-EQEC52157.2021.9542167)

Fitch, Christopher R., Read, Graham W., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Duffy, Dominic A., Cerutti, Laurent, Rodriguez, Jean-Baptiste, Tournie, Eric and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2021) Carrier recombination and temperature-dependence of GaInSb quantum well lasers for silicon photonics applications. In: 2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), Munich, Germany, 21-25 June 2021, ISBN 9781665418768 (doi: 10.1109/CLEO/Europe-EQEC52157.2021.9542471)

Duffy, Dominic A., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Fuchs, Christian, Eales, Timothy D., Lehr, Jannik, Stolz, Wolfgang and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2021) Performance characteristics of low threshold current 1.25 μm type-II GaInAs/GaAsSb ‘W’-lasers for optical communications. Journal of Physics D: Applied Physics, 54(36), 365104. (doi: 10.1088/1361-6463/ac0b72)

Fitch, C. R., Read, G. W., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Duffy, D. A., Cerutti, L., Rodriguez, J. -B., Tournié, E. and Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071 (2021) Erratum: “Thermal performance of GaInSb quantum well lasers for silicon photonics applications” [Appl. Phys. Lett. 118, 101105 (2021)]. Applied Physics Letters, 118(18), 189903. (doi: 10.1063/5.0054686)

Eales, Timothy D., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, Alfred R., Meyer, Jerry R., Vurgaftman, Igor and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2021) Quantifying Auger recombination coefficients in type-I mid-infrared InGaAsSb quantum well lasers. Journal of Physics D: Applied Physics, 54(5), 055105. (doi: 10.1088/1361-6463/abc042)

2020

Li, B. et al. (2020) Reduced bilateral recombination by functional molecular interface engineering for efficient inverted perovskite solar cells. Nano Energy, 78, 105249. (doi: 10.1016/j.nanoen.2020.105249)

Woon Lim, Leh, Patil, Pallavi, Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Clarke, Edmund, Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071, Shien Ng, Jo, David, John P. R. and Hing Tan, Chee (2020) Electrical and optical characterisation of low temperature grown InGaAs for photodiode applications. Semiconductor Science and Technology, 35(9), 095031. (doi: 10.1088/1361-6641/aba167)

2019

Eales, T. D. et al. (2019) Activated auger processes and their wavelength dependence in type-I mid-infrared laser diodes. In: 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), Munich, Germany, 23-27 Jun 2019, ISBN 9781728104690 (doi: 10.1109/CLEOE-EQEC.2019.8872666)

Eales, T. D. et al. (2019) Ge1-xSnx alloys: consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration. Scientific Reports, 9, 14077. (doi: 10.1038/s41598-019-50349-z) (PMID:31575881) (PMCID:PMC6773784)

Sharpe, M.K., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Duffy, D.A., England, J., Schneider, E., Kesaria, M., Federov, V., Clarke, E., Tan, C.H. and Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071 (2019) A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques. Journal of Applied Physics, 12, 125706. (doi: 10.1063/1.5109653)

Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946 and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2019) The physics of bismide-based lasers. In: Wang, Shumin and Lu, Pengfe (eds.) Bismuth-Containing Alloys and Nanostructures. Series: Springer series in materials science, 285. Springer Singapore: Singapore, pp. 263-298. ISBN 9789811380785 (doi: 10.1007/978-981-13-8078-5_12)

Chai, Grace M.T., Sultan, S.M., Zide, J.M.O., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071 and Hosea, T.J.C. (2019) Spectroscopic studies on InGaBiAs/InP semiconductors for mid-infrared applications. In: International Photonics and OptoElectronics Meeting 2019, Wuhan, China, 11-14 Nov 2019, ISBN 9781943580729 (doi: 10.1364/OEDI.2019.OTh3C.4)

Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Eales, T.D. and Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946 (2019) The physics of mid-infrared semiconductor materials and heterostructures. In: Tournié, Eric and Cerutti, Laurent (eds.) Mid-infrared Optoelectronics: Materials, Devices, and Applications. Series: Woodhead publishing series in electronic and optical materials. Woodhead Publishing, pp. 3-56. ISBN 9780081027097 (doi: 10.1016/B978-0-08-102709-7.00001-2)

2018

Montesdeoca, D., Carrington, P.J., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Wagener, M.C., Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071 and Krier, A. (2018) Open circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure. Solar Energy Materials and Solar Cells, 187, pp. 227-232. (doi: 10.1016/j.solmat.2018.07.028)

Eales, Timothy D., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Kemp, Chris, Fuchs, Christian, Stolz, Wolfgang and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2018) Efficiency Limiting Mechanisms in 1.2-1.3 μm GaInAs/GaAsSb 'W' Lasers. In: 2018 IEEE International Semiconductor Laser Conference (ISLC), Santa Fe, NM, USA, 16-19 Sep 2018, pp. 181-182. ISBN 9781538664865 (doi: 10.1109/ISLC.2018.8516226)

Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Baltusis, Aidas, Adams, Alf R., Jung, Daehwan, Norman, Justin C., Bowers, John E. and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2018) Physical Properties of 1.3 μm InAs-Based Quantum Dot Laser on Silicon. In: 2018 IEEE International Semiconductor Laser Conference (ISLC), Santa Fe, NM, USA, 16-19 Sep 2018, pp. 137-138. ISBN 9781538664865 (doi: 10.1109/ISLC.2018.8516204)

Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946 and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2018) The influence of inhomogeneities and defects on novel quantum well and quantum dot based infrared-emitting semiconductor lasers. Semiconductor Science and Technology, 33(11), 113002. (doi: 10.1088/1361-6641/aae2ac)

Eales, T., Marko, Igor ORCID: https://orcid.org/0000-0001-7568-5946, Ikyo, B.A., Adams, A.R., Andrejew, A., Vizbaras, K., Amann, M.-C., Shterengas, L. and Sweeney, S.J. (2018) The Nature of Auger Recombination in Type-I Quantum Well Lasers Operating in the Near- and Mid-Infrared. In: 2018 IEEE International Semiconductor Laser Conference (ISLC), Santa Fe, NM, USA, 16-19 Sep 2018, pp. 223-224. ISBN 9781538664865 (doi: 10.1109/ISLC.2018.8516247)

2017

Eales, Timothy D., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Ikyo, Barnabas A., Adams, Alfred R., Arafin, Shamsul, Sprengel, Stephan, Amann, Markus-Christian and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2017) Wavelength dependence of efficiency limiting mechanisms in Type-I Mid-Infrared GaInAsSb/GaSb lasers. IEEE Journal of Selected Topics in Quantum Electronics, 23(6), 1500909. (doi: 10.1109/JSTQE.2017.2687823)

Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946 and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2017) Progress toward III-V bismide alloys for near- and midinfrared laser diodes. IEEE Journal of Selected Topics in Quantum Electronics, 23(6), 1501512. (doi: 10.1109/JSTQE.2017.2719403)

Broderick, Christopher A., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, O'Reilly, Eoin P. and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2017) Dilute bismide alloys. In: Piprek, Joachim (ed.) Handbook of Optoelectronic Device Modeling and Simulation: Fundamentals, Materials, Nanostructures, LEDs, and Amplifiers. CRC Press: Boca Raton, pp. 313-362. ISBN 9781315152301 (doi: 10.1201/9781315152301)

Eales, T., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Ikyo, B.A., Adams, A.R., Vurgaftman, I., Arafin, S., Sprengel, S., Amann, M.-C., Meyer, J.R. and Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071 (2017) Auger Recombination in Type I GaInAsSb/GaSb Lasers and Its Variation with Wavelength in the 2-3 μm Range. In: The European Conference on Lasers and Electro-Optics 2017, Munich, Germany, 25–29 Jun 2017, ISBN 9781509067367

Broderick, C. A. et al. (2017) GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics. Scientific Reports, 7, 46371. (doi: 10.1038/srep46371)

Eales, T., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Ikyo, B.A., Adams, A.R., Vurgaftman, I., Arafin, S., Sprengel, S., Amann, M.-C., Meyer, J.R. and Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071 (2017) Auger Recombination in Type I GaInAsSb/GaSb Lasers and its Variation with Wavelength in the 2-3 µm Range. In: European Conference on Lasers and Electro-Optics 2017, Munich, Germany, 25-29 June 2017, ISBN 9781509067367

2016

Eales, Timothy, Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Ikyo, Barnabas A., Adams, Alf R., Arafin, Shamsul, Sprengel, Stephan, Amann, Markus-C. and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2016) Wavelength Dependence of Efficiency Limiting Mechanisms in Type I GaInAsSb/GaSb Lasers Emitting in the Mid-infrared. In: 2016 International Semiconductor Laser Conference (ISLC), Kobe, Japan, 12-15 Sep 2016, ISBN 9784885523069

Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Broderick, Christopher A., Jin, Shirong, Ludewig, Peter, Stolz, Wolfgang, Volz, Kerstin, Rorison, Judy M., O'Reilly, Eoin P. and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2016) Optical Gain in GaAsBi/GaAs Quantum Well Diode Lasers. In: 2016 International Semiconductor Laser Conference (ISLC), Kobe, Japan, 12-15 Sep 2016, ISBN 9784885523069

Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Broderick, Christopher A., Jin, Shirong, Ludewig, Peter, Stolz, Wolfgang, Volz, Kerstin, Rorison, Judy M., O'Reilly, Eoin P. and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2016) Optical gain in GaAsBi/GaAs quantum well diode lasers. Scientific Reports, 6, 28863. (doi: 10.1038/srep28863) (PMID:27363930) (PMCID:PMC4929443)

Broderick, Christopher A., Rorison, Judy M., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 and O'Reilly, Eoin P. (2016) GaAs-based Dilute Bismide Semiconductor Lasers: Theory Vs. Experiment. In: 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Sydney, NSW, Australia, 11-15 Jul 2016, pp. 209-210. ISBN 9781467386036 (doi: 10.1109/NUSOD.2016.7546999)

Ikyo, A.B., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Hild, K. ORCID: https://orcid.org/0009-0008-1593-112X, Adams, A.R., Arafin, S., Amann, M.-C. and Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071 (2016) Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs). Scientific Reports, 6, 19595. (doi: 10.1038/srep19595) (PMID:26781492) (PMCID:PMC4726019)

2015

Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Jin, S.R., Hild, K. ORCID: https://orcid.org/0009-0008-1593-112X and Batool, Z. (2015) Bismuth-based semiconductors for mid-infrared photonic devices. In: 2015 IEEE Summer Topicals Meeting Series (SUM), Nassau, Bahamas, 13-15 Jul 2015, pp. 181-182. ISBN 9781479974689 (doi: 10.1109/PHOSST.2015.7248257)

Marko, I.P. et al. (2015) Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers. Semiconductor Science and Technology, 30, 094008. (doi: 10.1088/0268-1242/30/9/094008)

Read, Graham William, Marko, Igor Pavlovich ORCID: https://orcid.org/0000-0001-7568-5946, Hossain, Nadir and Sweeney, Stephen John ORCID: https://orcid.org/0000-0001-8561-6071 (2015) Physical properties and characteristics of III-V lasers on silicon. IEEE Journal of Selected Topics in Quantum Electronics, 21(6), 1502208. (doi: 10.1109/JSTQE.2015.2424923)

Adams, Alfred R., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Mukherjee, Jayanta, Stolojan, Vlad, Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071, Gocalinska, Agnieszka, Pelucchi, Emanuele, Thomas, Kevin and Corbett, Brian (2015) Semiconductor quantum well lasers with a temperature-insensitive threshold current. IEEE Journal of Selected Topics in Quantum Electronics, 21(6), 1500806. (doi: 10.1109/JSTQE.2015.2413403)

Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946 and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2015) Optical and electronic processes in semiconductor materials for device applications. In: Singh, J. and Williams, R.T. (eds.) Excitonic and Photonic Processes in Materials. Series: Springer series in materials science (203). Springer: Singapore, pp. 253-297. ISBN 9789812871312 (doi: 10.1007/978-981-287-131-2_9)

2014

Adams, A.R., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Mukherjee, J., Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Gocalinska, A., Pelucchi, E. and Corbett, B. (2014) Semiconductor Quantum Well Lasers with a Temperature Insensitive Threshold Current. In: 2014 International Semiconductor Laser Conference, Palma de Mallorca, Spain, 7-10 Sep 2014, pp. 82-83. ISBN 9781479957217 (doi: 10.1109/ISLC.2014.174)

Sweeney, S.J. et al. (2014) Electrically Injected GaAsBi Quantum Well Lasers. In: 2014 International Semiconductor Laser Conference, Palma de Mallorca, Spain, 07-10 Sep 2014, pp. 80-81. ISBN 9781479957217 (doi: 10.1109/ISLC.2014.173)

Marko, I.P. et al. (2014) Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi. Journal of Physics D: Applied Physics, 47, 345103. (doi: 10.1088/0022-3727/47/34/345103)

Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R., Massé, N.F. and Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071 (2014) Effect of non-pinned carrier density above threshold in InAs quantum dot and quantum dash lasers. IET Optoelectronics, 8(2), pp. 88-93. (doi: 10.1049/iet-opt.2013.0055)

Chai, G.M.T., Hosea, T.J.C., Fox, N.E., Hild, K. ORCID: https://orcid.org/0009-0008-1593-112X, Ikyo, A.B., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Bachmann, A., Arafin, S. and Amann, M.-C. (2014) Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance. Journal of Applied Physics, 115(1), 013102. (doi: 10.1063/1.4861146)

2013

Hild, K. ORCID: https://orcid.org/0009-0008-1593-112X, Batool, Z., Jin, S.R., Hossain, N., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Hosea, T.J.C., Lu, X., Tiedje, T. and Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071 (2013) Auger Recombination Suppression and Band Alignment in GaAsBi/GaAs Heterostructures. In: 31st International Conference on the Physics of Semiconductors (ICPS) 2012, Zurich, Switzerland, 29 Jul–3 Aug 2012, pp. 488-489. ISBN 9780735411944 (doi: 10.1063/1.4848498)

Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Jin, S.R., Hild, K., Batool, Z., Hossain, N. and Hosea, T.J.C. (2013) Bismide-based photonic devices for near- and mid-infrared applications. In: Li, Handong and Wang, Zhiming M. (eds.) Bismuth-Containing Compounds. Series: Springer series in materials science, 186. Springer: New York, pp. 29-53. ISBN 9781461481218 (doi: 10.1007/978-1-4614-8121-8_2)

Crutchley, Benjamin G., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946 and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2013) The influence of temperature on the recombination processes in blue and green InGaN LEDs. Physica Status Solidi C, 10(11), pp. 1533-1536. (doi: 10.1002/pssc.201300360)

Pal, J., Migliorato, M.A., Li, C.-K., Wu, Y.-R., Crutchley, B.G., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946 and Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071 (2013) Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management. Journal of Applied Physics, 114(7), 073104. (doi: 10.1063/1.4818794)

Ludewig, P. et al. (2013) Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser. Applied Physics Letters, 102(24), 242115. (doi: 10.1063/1.4811736)

Crutchley, Benjamin G., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, Alf R. and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2013) Investigating the Efficiency Limitations of GaN-based Emitters. In: 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC, Munich, Germany, 12-16 May 2013, ISBN 9781479905942 (doi: 10.1109/CLEOE-IQEC.2013.6801007)

Ikyo, Barnabas A., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Hild, Konstanze ORCID: https://orcid.org/0009-0008-1593-112X, Adams, Alfred R., Arafin, Shamsul, Amann, Marcus-C. and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2013) The effect of hole leakage and auger recombination on the temperature sensitivity of GaInAsSb/GaSb mid-infrared lasers. In: 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC, Munich, Germany, 12-16 May 2013, ISBN 9781479905942 (doi: 10.1109/cleoe-iqec.2013.6800690)

Aldukhayel, A., Jin, S.R., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Zhang, S.Y., Revin, D.G., Cockburn, J.W. and Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071 (2013) Investigations of carrier scattering into L-valley in λ=3.5μm InGaAs/AlAs(Sb) quantum cascade lasers using high hydrostatic pressure. Physica Status Solidi B: Basic Solid State Physics, 250(4), pp. 693-697. (doi: 10.1002/pssb.201200848)

Crutchley, B.G., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Pal, J., Migliorato, M.A. and Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071 (2013) Optical properties of InGaN-based LEDs investigated using high hydrostatic pressure dependent techniques. Physica Status Solidi B: Basic Solid State Physics, 250(4), pp. 698-702. (doi: 10.1002/pssb.201200514)

2012

Marko, I.P. et al. (2012) Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications. Applied Physics Letters, 101(22), 221108. (doi: 10.1063/1.4768532)

Reed, G.T. et al. (2012) High performance silicon optical modulators. In: Photonics Asia 2012: Nanophotonics and Micro/Nano Optics, Beijing, China, 5-7 Nov 2012, ISBN 9780819493194 (doi: 10.1117/12.2001296)

Hosea, T.J.C. et al. (2012) InGaBiAs/InP Semiconductors for Mid-infrared Applications: Dependence of Bandgap and Spin-orbit Splitting on Temperature and Bismuth Content. In: 2012 IEEE 3rd International Conference on Photonics, Pulau Pinang, Malaysia, 1-3 Oct 2012, pp. 154-158. ISBN 9781467314633 (doi: 10.1109/ICP.2012.6379872)

Tan, S.L. et al. (2012) Improved optoelectronic properties of rapid thermally annealed dilute nitride GaInNAs photodetectors. Journal of Electronic Materials, 41(12), pp. 3393-3401. (doi: 10.1007/s11664-012-2245-9)

Blume, G., Hild, K. ORCID: https://orcid.org/0009-0008-1593-112X, Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Hosea, T.J.C., Yu, S.-Q., Chaparro, S.A., Samal, N., Johnson, S.R., Zhang, Y.-H. and Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071 (2012) Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements. Journal of Applied Physics, 112(3), 033108. (doi: 10.1063/1.4744985)

Hossain, N., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Jin, S.R., Hild, K. ORCID: https://orcid.org/0009-0008-1593-112X, Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Lewis, R.B., Beaton, D.A. and Tiedje, T. (2012) Recombination mechanisms and band alignment of GaAs1-xBi x/GaAs light emitting diodes. Applied Physics Letters, 100(5), 051105. (doi: 10.1063/1.3681139)

2011

Lever, L. et al. (2011) Modulation of the absorption coefficient at 1:3μm in Ge/SiGe multiple quantum well heterostructures on silicon. Optics Letters, 36(21), pp. 4158-4160. (doi: 10.1364/OL.36.004158) (PMID:22048350)

Cheetham, K.J., Krier, A., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Aldukhayel, A. and Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071 (2011) Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes. Applied Physics Letters, 99(14), 141110. (doi: 10.1063/1.3646910)

Lever, L. et al. (2011) Strain Engineering of the Electroabsorption Response in Ge/SiGe Multiple Quantum Well Heterostructures. In: 8th IEEE International Conference on Group IV Photonics, GFP 2011, London, UK, 4-16 Sep 2011, pp. 107-108. ISBN 9781424483389 (doi: 10.1109/GROUP4.2011.6053731)

Hild, K. ORCID: https://orcid.org/0009-0008-1593-112X, Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Johnson, S.R., Yu, S.-Q., Zhang, Y.-H. and Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071 (2011) Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 μm GaAsSb/GaAs vertical cavity surface emitting lasers. Applied Physics Letters, 99(7), 071110. (doi: 10.1063/1.3625938)

Ikyo, B.A., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R., Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Canedy, C.L., Vurgaftman, I., Kim, C.S., Kim, M., Bewley, W.W. and Meyer, J.R. (2011) Temperature dependence of 4.1 μm mid-infrared type II "w" interband cascade lasers. Applied Physics Letters, 99(2), 021102. (doi: 10.1063/1.3606533)

Tan, S. L. et al. (2011) GaInNAsSb/GaAs photodiodes for long-wavelength applications. IEEE Electron Device Letters, 32(7), pp. 919-921. (doi: 10.1109/LED.2011.2145351)

2010

Mashanovich, G.Z. et al. (2010) Waveguides for Mid-Infrared Group IV Photonics. In: 7th IEEE International Conference on Group IV Photonics, Beijing, China, 01-03 Sep 2010, pp. 374-376. ISBN 9781424463466 (doi: doi10.1109/GROUP4.2010.5643320)

Sayid, Sayid A., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071, Barrios, Pedro and Poole, Philip J. (2010) Efficiency limiting processes in 1.55 μm InAs/InP-based quantum dots lasers. Applied Physics Letters, 97(16), 161104. (doi: 10.1063/1.3504253)

Crutchley, Benjamin G., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, Alf R. and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2010) Efficiency Limitations of Green InGaN LEDs and Laser Diodes. In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010, pp. 27-28. ISBN 9781424456840 (doi: 10.1109/ISLC.2010.5642770)

Ikyo, Barnabas A., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, Alf R., Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071, Canedy, Chadwick L., Vurgaftman, Igor, Kim, Chul Soo, Kim, Mijin, Bewley, William W. and Meyer, Jerry R. (2010) Temperature Sensitivity of Mid-infrared Type II "W" Interband Cascade Lasers (ICL) Emitting at 4.1μm at Room Temperature. In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010, pp. 41-42. ISBN 9781424456840 (doi: 10.1109/ISLC.2010.5642761)

Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Aldukhayel, A.M., Adams, A.R., Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Teissier, R., Baranov, A.N. and Tomić, S. (2010) Physical Properties of Short Wavelength 2.6μm InAs/AlSb-based Quantum Cascade Lasers. In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010, pp. 95-96. ISBN 9781424456840 (doi: 10.1109/ISLC.2010.5642736)

Sayid, Sayid A., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, Alfred R., Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071, Barrios, Pedro and Poole, Philip (2010) Thermal Behavior of 1.55 μm (100) InAs/InP-based Quantum Dot Lasers. In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010, pp. 75-76. ISBN 9781424456840 (doi: 10.1109/ISLC.2010.5642746)

Tan, S.L., Tan, L.J.J., Goh, Y.L., Zhang, S., Ng, J.S., David, J.P.R., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Allam, J., Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071 and Adams, A.R. (2010) Reduction of Dark Current and Unintentional Background Doping in InGaAsN Photodetectors by Ex Situ Annealing. In: SPIE Optical Sensing and Detection 2010, Brussels, Belgium, 12-15 Apr 2010, ISBN 9780819481993 (doi: 10.1117/12.853912)

Sayid, Sayid Ally, Marko, Igor Pavlovich ORCID: https://orcid.org/0000-0001-7568-5946, Cannard, Paul J., Chen, Xin, Rivers, Lesley J., Lealman, Ian F. and Sweeney, Stephen John ORCID: https://orcid.org/0000-0001-8561-6071 (2010) Thermal Characteristics of 1.55 μm InGaAlAs Quantum Well Buried Heterostructure Lasers. IEEE Journal of Quantum Electronics, 46(5), pp. 700-705. (doi: 10.1109/JQE.2009.2039117)

Sayid, Sayid A., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 and Poole, Philip (2010) Temperature Sensitivity of 1.55μm (100) InAs/InP-based Quantum Dot Lasers. In: 22nd International Conference on Indium Phosphide and Related Materials (IPRM), Takamatsu, Japan, 31 May-4 Jun 2010, pp. 23-24. ISBN 9781424459223 (doi: 10.1109/ICIPRM.2010.5516172)

Sayid, Sayid Ally, Marko, Igor Pavlovich ORCID: https://orcid.org/0000-0001-7568-5946, Cannard, Paul J., Chen, Xin, Rivers, Lelsey J., Lealman, Ian F. and Sweeney, Stephen John ORCID: https://orcid.org/0000-0001-8561-6071 (2010) Thermal Performance of 1.55μm InGaAlAs Quantum Well Buried Heterostructure Lasers. In: 22nd International Conference on Indium Phosphide and Related Materials (IPRM), Takamatsu, Japan, 31 May-4 Jun 2010, pp. 265-268. ISBN 9781424459223 (doi: 10.1109/ICIPRM.2010.5516088)

2009

Ikyo, A.B., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R., Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Bachmann, A., Kashani-Shirazi, K. and Amann, M.-C. (2009) Gain peak-cavity mode alignment optimisation in buried tunnel junction mid-infrared GaSb vertical cavity surface emitting lasers using hydrostatic pressure. IET Optoelectronics, 3(6), pp. 305-309. (doi: 10.1049/iet-opt.2009.0045)

Tan, L.J.J. et al. (2009) Dark current mechanisms in InxGa1-xAs1-yNy. In: 2009 IEEE LEOS Annual Meeting Conference Proceedings, Belek-Antalya, Turkey, 4-8 Oct 2009, pp. 233-234. ISBN 9781424436804 (doi: 10.1109/LEOS.2009.5343290)

Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Ikyo, A.B., Adams, A.R., Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Bachmann, A., Kashani-Shirazi, K. and Amann, M.-C. (2009) Band-structure and gain-cavity tuning of 2.4-μm GaSb buried tunnel junction VCSELs. In: CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, Munich, Germany, 14-19 June 2009, ISBN 9781424440795 (doi: 10.1109/CLEOE-EQEC.2009.5193611)

Crowley, Mark Thomas, Marko, Igor Pavlovich ORCID: https://orcid.org/0000-0001-7568-5946, Massé, Nicolas F., Andreev, Aleksey D., Tomic, Stanko, Sweeney, Stephen John ORCID: https://orcid.org/0000-0001-8561-6071, O'Reilly, Eoin P. and Adams, Alfred R. (2009) The importance of recombination via excited states in inAs/GaAs 1.3μm quantum-dot lasers. IEEE Journal of Selected Topics in Quantum Electronics, 15(3), pp. 799-807. (doi: 10.1109/JSTQE.2009.2015679)

Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, Alfred R., Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071, Teissier, Roland, Baranov, Alexei N. and Tomić, Stanko (2009) Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressure. Physica Status Solidi B: Basic Solid State Physics, 246(3), pp. 512-515. (doi: 10.1002/pssb.200880501)

Adams, A.R., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Teissier, R., Baranov, A.N. and Tomić, S. (2009) The Effect of Hydrostatic Pressure on the Operation of Quantum Cascade Lasers. In: SPIE Quantum Cascade Lasers and Applications I, San Jose, USA, 25-28 Jan 2009, (doi: 10.1117/12.814322)

Massé, N.F., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R. and Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071 (2009) Temperature insensitive quantum dot lasers: Are we really there yet? Journal of Materials Science: Materials in Electronics, 20(SUPPL.), pp. 272-276. (doi: 10.1007/s10854-008-9574-8)

2008

Crowley, M.T., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Masse, N.F., Andreev, A.D., Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, O'Reilly, E.P. and Adams, A.R. (2008) The importance of recombination via excited states in InAs/GaAs 1.3μm quantum dot lasers. In: 2008 IEEE 21st International Semiconductor Laser Conference, Sorrento, Italy, 14-18 Sep 2008, pp. 117-118. ISBN 9781424417827 (doi: 10.1109/ISLC.2008.4636037)

Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R., Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Teissier, R., Baranov, A.N. and Tomic, S. (2008) Gamma-L scattering in InAs-based quantum cascade lasers studied using high hydrostatic pressure. In: 2008 IEEE 21st International Semiconductor Laser Conference, Sorrento, Italy, 14-18 Sep 2008, pp. 47-48. ISBN 9781424417827 (doi: 10.1109/ISLC.2008.4636002)

Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Hild, K. ORCID: https://orcid.org/0009-0008-1593-112X, Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Yu, S.-Q., Johnson, S.R. and Zhang, Y.-H. (2008) Thermal characteristics of 1.3μm GaAsSb/GaAs-based edge- and surface-emitting lasers. In: 2008 IEEE 21st International Semiconductor Laser Conference, Sorrento, Italy, 14-18 Sep 2008, pp. 83-84. ISBN 9781424417827 (doi: 10.1109/ISLC.2008.4636020)

Lealman, I., Dosanjh, S., Rivers, L., O'Brien, S., Cannard, P., Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946 and Rushworth, S. (2008) Reliable 1550nm SI BH lasers fabricated using an improved Ru precursor. In: 20th International Conference on Indium Phosphide and Related Materials, Versailles, France, 25-29 May 2008, ISBN 9781424422586 (doi: 10.1109/ICIPRM.2008.4702913)

2007

Massé, N.F., Homeyer, E., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R., Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Dehaese, O., Piron, R., Grillot, F. and Loualiche, S. (2007) Temperature and pressure dependence of the recombination processes in 1.5 μm InAsInP (311)B quantum dot lasers. Applied Physics Letters, 91(13), 131113. (doi: 10.1063/1.2790777)

Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R., Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Whitbread, N.D., Ward, A.J., Asplin, B. and Robbins, D.J. (2007) The influence of carrier density non-pinning on the output power of 1.55 μm lasers at high temperature. In: 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference, Munich, Germany, 17-22 Jun 2007, ISBN 9781424409303 (doi: 10.1109/CLEOE-IQEC.2007.4385984)

Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Massé, N.F., Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Adams, A.R., Hatori, N. and Sugawara, M. (2007) Recombination, Transport and Loss Mechanisms in P-Doped InAs/GaAs Quantum Dots. In: Physics of Semiconductors, 28th International Conference, Vienna, Austria, 24 - 28 July 2006, pp. 837-838. ISBN 9780735403970 (doi: 10.1063/1.2730151)

Hild, K. ORCID: https://orcid.org/0009-0008-1593-112X, Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Jin, S.R., Johnson, S.R., Chaparro, S.A., Yu, S. and Zhang, Y.-H. (2007) Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers. Physica Status Solidi B: Basic Solid State Physics, 244(1), pp. 197-202. (doi: 10.1002/pssb.200672571)

Marko, I.P. et al. (2007) Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure. Physica Status Solidi B: Basic Solid State Physics, 244(1), pp. 82-86. (doi: 10.1002/pssb.200672544)

2006

Massé, N.F., Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R., Hatori, N. and Sugawara, M. (2006) Temperature dependence of the gain in p -doped and intrinsic 1.3 μm InAsGaAs quantum dot lasers. Applied Physics Letters, 89(19), 191118. (doi: 10.1063/1.2387114)

Hild, K., Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Wright, S., Lock, D.A., Jin, S.R., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Johnson, S.R., Chaparro, S.A., Yu, S.-Q. and Zhang, Y.-H. (2006) Carrier recombination in 1.3 μm GaAsSb/GaAs quantum well lasers. Applied Physics Letters, 89(17), 173509. (doi: 10.1063/1.2369649)

2005

Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Masse, N., Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Adams, A.R., Sellers, I.R., Mowbray, D.J., Skolnick, M.S., Liu, H.Y. and Groom, K.M. (2005) Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 μm quantum dot lasers. In: 2005 IEEE LEOS Annual Meeting, Sydney, Australia, 22 - 28 Oct 2005, pp. 402-403. ISBN 9780780392175 (doi: 10.1109/LEOS.2005.1548048)

Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Massé, N.F., Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Andreev, A.D., Adams, A.R., Hatori, N. and Sugawara, M. (2005) Carrier transport and recombination in p -doped and intrinsic 1.3 μm InAsGaAs quantum-dot lasers. Applied Physics Letters, 87(21), 211114. (doi: 10.1063/1.2135204)

Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, A.R., Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Mowbray, D.J., Skolnick, M.S., Liu, H.Y. and Groom, K.M. (2005) Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-/spl mu/m quantum-dot lasers. IEEE Journal of Selected Topics in Quantum Electronics, 11(5), pp. 1041-1047. (doi: 10.1109/JSTQE.2005.853847)

Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Andreev, A.D., Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071, Adams, A.R., Krebs, R., Deubert, S., Reithmaier, J.P. and Forchel, A. (2005) The influence of auger processes on recombination in long-wavelength InAs/GaAs quantum dots. In: 27th International Conference on the Physics of Semiconductors - ICPS-27, Flagstaff, AZ, USA, 26-30 Jul 2004, pp. 681-682. ISBN 0735402574 (doi: 10.1063/1.1994289)

This list was generated on Tue Dec 2 09:34:42 2025 GMT.

Jump to: Articles | Book Sections | Conference or Workshop Item | Conference Proceedings

Number of items: 106.

Articles

Duffy, Dominic A., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Fuchs, Christian, Eales, Timothy D., Lehr, Jannik, Stolz, Wolfgang and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2021) Performance characteristics of low threshold current 1.25 μm type-II GaInAs/GaAsSb ‘W’-lasers for optical communications. Journal of Physics D: Applied Physics, 54(36), 365104. (doi: 10.1088/1361-6463/ac0b72)

Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Broderick, Christopher A., Jin, Shirong, Ludewig, Peter, Stolz, Wolfgang, Volz, Kerstin, Rorison, Judy M., O'Reilly, Eoin P. and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2016) Optical gain in GaAsBi/GaAs quantum well diode lasers. Scientific Reports, 6, 28863. (doi: 10.1038/srep28863) (PMID:27363930) (PMCID:PMC4929443)

Ludewig, P. et al. (2013) Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser. Applied Physics Letters, 102(24), 242115. (doi: 10.1063/1.4811736)

Tan, S. L. et al. (2011) GaInNAsSb/GaAs photodiodes for long-wavelength applications. IEEE Electron Device Letters, 32(7), pp. 919-921. (doi: 10.1109/LED.2011.2145351)

Book Sections

Conference or Workshop Item

Conference Proceedings

Eales, T., Marko, I.P. ORCID: https://orcid.org/0000-0001-7568-5946, Ikyo, B.A., Adams, A.R., Vurgaftman, I., Arafin, S., Sprengel, S., Amann, M.-C., Meyer, J.R. and Sweeney, S.J. ORCID: https://orcid.org/0000-0001-8561-6071 (2017) Auger Recombination in Type I GaInAsSb/GaSb Lasers and its Variation with Wavelength in the 2-3 µm Range. In: European Conference on Lasers and Electro-Optics 2017, Munich, Germany, 25-29 June 2017, ISBN 9781509067367

Crutchley, Benjamin G., Marko, Igor P. ORCID: https://orcid.org/0000-0001-7568-5946, Adams, Alf R. and Sweeney, Stephen J. ORCID: https://orcid.org/0000-0001-8561-6071 (2010) Efficiency Limitations of Green InGaN LEDs and Laser Diodes. In: 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26-30 Sep 2010, pp. 27-28. ISBN 9781424456840 (doi: 10.1109/ISLC.2010.5642770)

This list was generated on Tue Dec 2 09:34:42 2025 GMT.

Research datasets

Jump to: 2024

Number of items: 1.

2024

Aneirin, E., Duffy, D. , Marko, I., Acharya, S., Du, W., Yu, S.Q. and Sweeney, S. (2024) Challenges for room temperature operation of electrically pumped GeSn lasers. [Data Collection]

This list was generated on Wed Dec 3 05:03:58 2025 GMT.

We use cookies

Necessary cookies

Analytics cookies

Clarity

Dr Igor Marko

Publications

2025

2024

2023

2022

2021

2020

2019

2018

2017

2016

2015

2014

2013

2012

2011

2010

2009

2008

2007

2006

2005

Articles

Book Sections

Conference or Workshop Item

Conference Proceedings

Research datasets

2024