2025

Dixit, Ankit ORCID: https://orcid.org/0000-0002-6653-6460, Ghosh, Ramesh ORCID: https://orcid.org/0000-0001-9586-8061, JACOBS, JAKE, Kumar, Naveen ORCID: https://orcid.org/0000-0002-4765-1789, Vila-Nadal, Laia ORCID: https://orcid.org/0000-0002-7718-7227, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366, Paul, Douglas J. ORCID: https://orcid.org/0000-0001-7402-8530 and Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 (2025) Nanowire behavior under the influence of polyoxometalates: a comparative study of depletion and enhancement modes. Solid-State Electronics, 228, 109145. (doi: 10.1016/j.sse.2025.109145)

2024

Acharya, Pranav ORCID: https://orcid.org/0000-0002-4701-5037, Rezaei, Ali ORCID: https://orcid.org/0000-0001-9150-9520, Sengupta, Amretashis ORCID: https://orcid.org/0000-0003-1125-6389, Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Kumar, Naveen ORCID: https://orcid.org/0000-0002-4765-1789, Maciazek, Patryk, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 (2024) Analysis of random discrete dopants embedded nanowire resonant tunnelling diodes for generation of physically unclonable functions. IEEE Transactions on Nanotechnology, (doi: 10.1109/TNANO.2024.3504963) (Early Online Publication)

Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Adamu-Lema, Fikru, Xeni, Nikolas, Rezaei, Ali ORCID: https://orcid.org/0000-0001-9150-9520, Dixit, Ankit ORCID: https://orcid.org/0000-0002-6653-6460, Topaloglu, Ismail ORCID: https://orcid.org/0000-0002-9599-5228, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2024) Predictive Simulation of Nanosheet Transistors including the Impact of Access Resistance. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2024), San Jose, CA, USA, 25-27 Sept 2024, (Accepted for Publication)

Dixit, Ankit ORCID: https://orcid.org/0000-0002-6653-6460, Rezaei, Ali ORCID: https://orcid.org/0000-0001-9150-9520, Xeni, Nikolas, Kumar, Naveen ORCID: https://orcid.org/0000-0002-4765-1789, Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Topaloglu, Ismail ORCID: https://orcid.org/0000-0002-9599-5228, Aleksandrov, Preslav ORCID: https://orcid.org/0009-0009-5198-9983, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 (2024) Unravelling the Impact of Random Dopant Fluctuations on Si-Based 3nm NSFET: A NEGF Analysis. In: IEEE 24th International Conference on Nanotechnology (NANO), Gijon, Spain, 08-11 Jul 2024, pp. 5-8. ISBN 9798350386240 (doi: 10.1109/NANO61778.2024.10628880)

Aneesh, Y. M., Bindu, B. and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2024) Single event transient effects in raised source/drain double-gate 1-T DRAM. In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Bangalore, Karnataka, India, 03-06 May 2024, ISBN 9798350371529 (doi: 10.1109/edtm58488.2024.10512048)

2023

Aleksandrov, Preslav ORCID: https://orcid.org/0009-0009-5198-9983, Rezaei, Ali ORCID: https://orcid.org/0000-0001-9150-9520, Xeni, Nikolas, Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 (2023) Fully Convolutional Generative Machine Learning Method for Accelerating Non-Equilibrium Green’s Function Simulations. In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 27-29 September 2023, pp. 169-172. ISBN 9784863488038 (doi: 10.23919/SISPAD57422.2023.10319587)

Kumar, Naveen ORCID: https://orcid.org/0000-0002-4765-1789, García, César Pascual, Rezaei, Ali ORCID: https://orcid.org/0000-0001-9150-9520, Dixit, Ankit ORCID: https://orcid.org/0000-0002-6653-6460, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 (2023) Electrolyte-Gated FET-based Sensing of Immobilized Amphoteric Molecules Including the Variability in Affinity of the Reactive Sites. In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 27-29 September 2023, pp. 377-380. ISBN 9784863488038 (doi: 10.23919/SISPAD57422.2023.10319578)

Aleksandrov, Preslav ORCID: https://orcid.org/0009-0009-5198-9983, Rezaei, Ali ORCID: https://orcid.org/0000-0001-9150-9520, Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Xeni, Nikolas, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 (2023) Convolutional machine learning method for accelerating non-equilibrium Green’s function simulations in nanosheet transistor. IEEE Transactions on Electron Devices, 70(10), pp. 5448-5453. (doi: 10.1109/TED.2023.3306319)

Medina Bailon, Cristina, Nedjalkov, Mihail, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508, Selberherr, Siegfried and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2023) Comprehensive mobility study of silicon nanowire transistors using multi-subband models. Nano Express, 4, 025005. (doi: 10.1088/2632-959X/acdb8a)

Nagy, Daniel ORCID: https://orcid.org/0000-0003-0854-6596, Rezaei, Ali ORCID: https://orcid.org/0000-0001-9150-9520, Xeni, Nikolas, Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Adamu-Lema, Fikru, Topaloglu, Ismail ORCID: https://orcid.org/0000-0002-9599-5228, Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2023) Hierarchical simulation of nanosheet field effect transistor: NESS flow. Solid-State Electronics, 199, 108489. (doi: 10.1016/j.sse.2022.108489)

2022

Guan, Yunhe, Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366, Liang, Feng and Chen, Haifeng (2022) Impact of the Figures of Merit (FoMs) definitions on the variability in nanowire TFET: NEGF simulation study. IEEE Transactions on Electron Devices, 69(11), pp. 6394-6399. (doi: 10.1109/TED.2022.3204596)

Vitanov, Petko, Ivanova, Tatyana, Dikov, Hristosko, Terziyska, Penka, Ganchev, Maxim, Petkov, Nikolay, Georgiev, Yordan and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2022) Effect of a discontinuous Ag layer on optical and electrical properties of ZnO/Ag/ZnOStructures. Coatings, 12(9), 1324. (doi: 10.3390/coatings12091324)

Gauhar, Ghulam Ali, Chenchety, Abhishek, Yenugula, Hashish, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Badami, Oves (2022) Study of gate current in advanced MOS architectures. Solid-State Electronics, 194, 108345. (doi: 10.1016/j.sse.2022.108345)

Rezaei, Ali ORCID: https://orcid.org/0000-0001-9150-9520, Maciazek, Patryk, Sengupta, Amretashis ORCID: https://orcid.org/0000-0003-1125-6389, Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Medina-Bailon, Cristina, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508 (2022) Statistical device simulations of III-V nanowire resonant tunneling diodes as physical unclonable functions source. Solid-State Electronics, 194, 108339. (doi: 10.1016/j.sse.2022.108339)

Tok, Kean H., Mehedi, Mehzabeen, Zhang, Jian F., Brown, James, Ye, Zengliang, Ji, Zhigang, Zhang, Weidong, Marsland, John S., Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 (2022) An integral methodology for predicting long-term RTN. IEEE Transactions on Electron Devices, 69(7), pp. 3869-3875. (doi: 10.1109/TED.2022.3176585)

Chen, R. et al. (2022) Carbon nanotube SRAM in 5-nm technology node design, optimization, and performance evaluation--part I: CNFET transistor optimization. IEEE Transactions on Very Large Scale Integration Systems, 30(4), pp. 432-439. (doi: 10.1109/TVLSI.2022.3146125)

Chen, R. et al. (2022) Carbon nanotube SRAM in 5-nm technology node design, optimization, and performance evaluation--part II: CNT interconnect optimization. IEEE Transactions on Very Large Scale Integration Systems, 30(4), pp. 440-448. (doi: 10.1109/TVLSI.2022.3146064)

Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Medina Bailon, Cristina, Xeni, Nikolas, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2022) Density Gradient Based Quantum-Corrected 3D Drift-Diffusion Simulator for Nanoscale MOSFETs. In: 2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC), Vancouver, Canada, 12-15 Dec 2021, ISBN 9781665418928 (doi: 10.1109/NMDC50713.2021.9677480)

2021

Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2021) Stability and Vmin analysis of ferroelectric negative capacitance FinFET based SRAM in the presence of variability. Solid-State Electronics, 184, 108100. (doi: 10.1016/j.sse.2021.108100)

Medina-Bailon, Cristina, Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Rezaei, Ali ORCID: https://orcid.org/0000-0001-9150-9520, Nagy, Daniel ORCID: https://orcid.org/0000-0003-0854-6596, Adamu-Lema, Fikru, Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2021) Simulation and modeling of novel electronic device architectures with NESS (Nano-Electronic Simulation Software): a modular nano TCAD simulation framework. Micromachines, 12(6), 680. (doi: 10.3390/mi12060680)

Medina-Bailon, Cristina, Padilla, José Luis, Sampedro, Carlos, Donetti, Luca, Gergiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Gamiz, Francisco and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2021) Self-consistent enhanced S/D tunneling implementation in a 2D MS-EMC nanodevice simulator. Micromachines, 12(6), 601. (doi: 10.3390/mi12060601)

Guan, Yunhe, Carrillo-Nuñez, Hamilton, Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366, Liang, Feng, Li, Zunchao and Chen, Haifeng (2021) Quantum simulation investigation of work-function variation in nanowire tunnel FETs. Nanotechnology, 32(15), 150001. (doi: 10.1088/1361-6528/abd125) (PMID:33285530)

Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Adamu-Lema, Fikru, Nagy, Daniel ORCID: https://orcid.org/0000-0003-0854-6596, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366, Nebesnyi, Valerii, Han, Jin-Woo and Widjaja, Yuniarto (2021) Equivalent Circuit Macro-Compact Model of the 1T Bipolar SRAM Cell. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2021), Dallas, TX, USA, 27-29 Sept 2021, pp. 285-288. ISBN 9781665406857 (doi: 10.1109/SISPAD54002.2021.9592536)

Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Medina Bailon, Cristina, Rezaei, Ali ORCID: https://orcid.org/0000-0001-9150-9520, Nagy, Daniel ORCID: https://orcid.org/0000-0003-0854-6596, Adamu-Lema, Fikru, Xeni, Nikolas, Abourrig, Yassine, Kumar, Naveen ORCID: https://orcid.org/0000-0002-4765-1789, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2021) TCAD Simulation of Novel Semiconductor Devices. In: International Conference on ASIC (ASICON) 2021, Kunming, China, 26-29 October 2021, ISBN 9781665438674 (doi: 10.1109/ASICON52560.2021.9620465)

2020

Medina-Bailon, Cristina, Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Adamu-Lema, Fikru, Rezaei, Ali ORCID: https://orcid.org/0000-0001-9150-9520, Nagy, Daniel ORCID: https://orcid.org/0000-0003-0854-6596, Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2020) Nano-electronic simulation software (NESS): a novel open-source TCAD simulation environment. Journal of Microelectronic Manufacturing, 3(4), 20030407. (doi: 10.33079/jomm.20030407)

Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Adamu-Lema, Fikru, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366, Widjaja, Yuniarto and Nebesnyi, Valerii (2020) Dynamic Simulation of Write ‘1’Operation in the Bi-stable 1-Transistor SRAM Cell. In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sept.-6 Oct. 2020, pp. 237-240. ISBN 9784863487635 (doi: 10.23919/SISPAD49475.2020.9241653)

Georgiev, V.P. ORCID: https://orcid.org/0000-0001-6473-2508, Sengupta, A. ORCID: https://orcid.org/0000-0003-1125-6389, Maciazek, P., Badami, O., Medina-Bailon, C., Dutta, T. ORCID: https://orcid.org/0000-0003-1917-314X, Adamu-Lema, F. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2020) Simulation of Gated GaAs-AlGaAs Resonant Tunneling Diodes for Tunable Terahertz Communication Applications. In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020, pp. 241-244. ISBN 9784863487635 (doi: 10.23919/SISPAD49475.2020.9241677)

Lapham, P., Badami, Ov., Medina-Bailon, C., Adamu-Lema, F., Dutta, T. ORCID: https://orcid.org/0000-0003-1917-314X, Nagy, D. ORCID: https://orcid.org/0000-0003-0854-6596, Georgiev, V. ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2020) A Combined First Principles and Kinetic Monte Carlo study of Polyoxometalate based Molecular Memory Devices. In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020, pp. 273-276. ISBN 9784863487635 (doi: 10.23919/SISPAD49475.2020.9241606)

Medina Bailon, Cristina, Badami, Oves, Carrillo-Nunez, Hamilton, Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Nagy, Daniel ORCID: https://orcid.org/0000-0003-0854-6596, Adamu-Lema, Fikru, Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2020) Enhanced Capabilities of the Nano-Electronic Simulation Software (NESS). In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020, pp. 293-296. ISBN 9781728173542 (doi: 10.23919/SISPAD49475.2020.9241594)

Xeni, Nikolas, Ghannam, Rami ORCID: https://orcid.org/0000-0001-6910-9280, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508, Adamu-Lema, Fikru, Badami, Oves and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2020) The Use of TCAD Simulations in Semiconductor Devices Teaching. Transnational Engineering Education Using Technology Workshop (TREET 2020), Glasgow, UK, 31 Jul 2020. ISBN 9781728188515 (doi: 10.1109/TREET50959.2020.9189752)

Berrada, Salim, Carrillo-Nunez, Hamilton, Lee, Jaehyun, Medina Bailon, Cristina, Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Badami, Oves, Adamu-Lema, Fikru, Thirunavukkarasu, Vasanthan, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2020) Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform. Journal of Computational Electronics, 19, pp. 1031-1046. (doi: 10.1007/s10825-020-01519-0)

Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2020) Vmin Prediction for Negative Capacitance MOSFET based SRAM. In: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 01-30 Sep 2020, ISBN 9781728187655 (doi: 10.1109/EUROSOI-ULIS49407.2020.9365282)

Badami, Oves, Sadi, Toufik, Adamu-Lema, Fikru, Lapham, Paul, Mu, Dejiang, Nagy, Daniel ORCID: https://orcid.org/0000-0003-0854-6596, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508, Ding, Jie and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2020) A Kinetic Monte Carlo study of retention time in a POM molecule-based flash memory. IEEE Transactions on Nanotechnology, 19, pp. 704-710. (doi: 10.1109/TNANO.2020.3016182)

Carrillo-Nuñez, Hamilton, Medina-Bailón, Cristina, Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2020) Full-band quantum transport simulation in presence of hole-phonon interactions using a mode-space k·p approach. Nanotechnology, 32(2), 020001. (doi: 10.1088/1361-6528/abacf3) (PMID:32759487)

Adamu-Lema, F., Monzio Compagnoni, C., Badami, O., Georgiev, V. ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2020) RTN and its intrinsic interaction with statistical variability sources in advanced nano-scale devices: a simulation study. In: Grasser, Tibor (ed.) Noise in Nanoscale Semiconductor Devices. Springer: Cham, pp. 441-466. ISBN 9783030374990 (doi: 10.1007/978-3-030-37500-3_13)

Medina-Bailon, Christina, Carrillo-Nunez, Hamilton, Lee, Jaehyun, Sampedro, Carlos, Padilla, Jose Luis, Donetti, Luca, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508, Gamiz, Francisco and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2020) Quantum enhancement of a S/D tunneling model in a 2D MS-EMC nanodevice simulator: NEGF comparison and impact of effective mass variation. Micromachines, 11(2), 204. (doi: 10.3390/mi11020204)

2019

Xeni, Nikolas, Ghannam, Rami ORCID: https://orcid.org/0000-0001-6910-9280, Udama, Fikru, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2019) Semiconductor Device Visualization using TCAD Software: Case Study for Biomedical Applications. IEEE UKCAS 2019, London, UK, 06 Dec 2019. (Accepted for Publication)

Sadi, Toufik, Badami, Oves, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508, Ding, Jie and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2019) Physical Insights into the Transport Properties of RRAMs Based on Transition Metal Oxides. In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. 2019, ISBN 9781728109404 (doi: 10.1109/SISPAD.2019.8870391)

Thirunavukkarasu, V. et al. (2019) Efficient Coupled-mode space based Non-Equilibrium Green’s Function Approach for Modeling Quantum Transport and Variability in Vertically Stacked SiNW FETs. In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. 2019, ISBN 9781728109404 (doi: 10.1109/SISPAD.2019.8870400)

Medina-Bailon, Cristina, Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Klüpfel, Sylvain, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2019) Scaling-aware TCAD Parameter Extraction Methodology for Mobility Prediction in Tri-gate Nanowire Transistors. In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. 2019, ISBN 9781728109404 (doi: 10.1109/SISPAD.2019.8870556)

Medina-Bailon, Cristina, Sadi, Toufik, Nedjalkov, Mihail, Carrillo-Nuñez, Hamilton, Lee, Jaehyun, Badami, Oves, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508, Selberherr, Siegfried and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2019) Mobility of circular and elliptical si nanowire transistors using a multi-subband 1d formalism. IEEE Electron Device Letters, 40(10), pp. 1571-1574. (doi: 10.1109/LED.2019.2934349)

Carrillo-Nunez, Hamilton, Dimitrova, Nadezhda, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 (2019) Machine learning approach for predicting the effect of statistical variability in Si junctionless nanowire transistors. IEEE Electron Device Letters, 40(9), pp. 1366-1369. (doi: 10.1109/LED.2019.2931839)

Guan, Yunhe, Li, Zunchao, Carrillo-Nunez, Hamilton, Zhang, Yefei, Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Liang, Feng (2019) An accurate analytical model for tunnel FET output characteristics. IEEE Electron Device Letters, 40(6), pp. 1001-1004. (doi: 10.1109/LED.2019.2914014)

Badami, Oves, Medina-Bailon, Cristina, Berrada, Salim, Carrillo-Nunez, Hamilton, Lee, Jaeyhun, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2019) Comprehensive study of cross-section dependent effective masses for silicon based gate-all-around transistors. Applied Sciences, 9(9), 1895. (doi: 10.3390/app9091895)

Liang, J. et al. (2019) Investigation of Pt-salt-doped-standalone-multiwall carbon nanotubes for on-chip interconnect applications. IEEE Transactions on Electron Devices, 66(5), pp. 2346-2352. (doi: 10.1109/TED.2019.2901658)

Manut, Azrif, Gao, Rui, Zhang, Jian Fu, Ji, Zhigang, Mehedi, Mehzabeen, Zhang, Wei Dong, Vigar, David, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Kaczer, Ben (2019) Trigger-when-charged: a technique for directly measuring RTN and BTI-induced threshold voltage fluctuation under use-Vdd. IEEE Transactions on Electron Devices, 66(3), pp. 1482-1488. (doi: 10.1109/TED.2019.2895700)

Medina Bailon, Cristina, Padilla, Jose L., Sadi, Toufik, Sampedro, Carlos, Godoy, Andres, Donetti, Luca, Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Gamiz, Francisco and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2019) Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices. IEEE Transactions on Electron Devices, 66(3), pp. 1145-1152. (doi: 10.1109/TED.2019.2890985)

Sadi, Toufik, Medina Bailon, Cristina, Nedjalkov, Mihail, Lee, Jaehyun, Badami, Oves, Berrada, Salim, Carrillo-Nunez, Hamilton, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508, Selberherr, Siegfried and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2019) Simulation of the impact of ionized impurity scattering on the total mobility in Si nanowire transistors. Materials, 12(1), 124. (doi: 10.3390/ma12010124)

Duan, M. ORCID: https://orcid.org/0000-0002-0205-9423, Navarro, C., Cheng, B., Adamu-Lema, F., Wang, X., Georgiev, V.P. ORCID: https://orcid.org/0000-0001-6473-2508, Gamiz, F., Millar, C. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2019) Thorough understanding of retention time of Z2FET memory operation. IEEE Transactions on Electron Devices, 66(1), pp. 383-388. (doi: 10.1109/TED.2018.2877977)

Carrillo-Nunez, Hamilton, Wang, Chen, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366, Young, Robert and Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 (2019) Simulation of Si Nanowire Quantum-Dot Devices for Authentication. In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, France, 01-03 Apr 2019, ISBN 9781728116587 (doi: 10.1109/EUROSOI-ULIS45800.2019.9041864)

Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Medina-Bailon, Cristina, Carrillo-Nunez, Hamilton, Badami, Oves, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2019) Schrödinger Equation Based Quantum Corrections in Drift-Diffusion: A Multiscale Approach. In: 2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), Stockholm, Sweden, 27-30 Oct 2019, ISBN 9781728126371 (doi: 10.1109/NMDC47361.2019.9084010)

Lee, Jaehyun, Medina-Bailon, Cristina, Berrada, Salim, Carrillo-Nunez, Hamilton, Sadi, Toufik, Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Nedjalkov, Mihail and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2019) A Multi-Scale Simulation Study of the Strained Si Nanowire FETs. In: 2018 IEEE 13th Nanotechnology Materials & Devices Conference (NMDC 2018), Portland, OR, USA, 14-17 Oct 2018, ISBN 9781538610169 (doi: 10.1109/NMDC.2018.8605884)

Medina Bailon, Cristina, Sadi, Toufik, Sampedro, Carlos, Padilla, Jose Luis, Donetti, Luca, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508, Gamiz, Francisco and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2019) Impact of the trap attributes on the gate leakage mechanisms in a 2D MS-EMC nanodevice simulator. In: Nikolov, Geno, Kolkovska, Natalia and Georgiev, Krassimir (eds.) Numerical Methods and Applications. Series: Lecture Notes in Computer Science, 11189 (11189). Springer, pp. 273-280. ISBN 9783030106911 (doi: 10.1007/978-3-030-10692-8_30)

Sadi, Toufik, Badami, Oves, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2019) Kinetic Monte Carlo Analysis of the Operation and Reliability of Oxide Based RRAMs. In: 12th International Conference on Large-Scale Scientific Computing, LSSC 2019, Sozopol, Bulgaria, 10-14 June 2019, pp. 429-437. (doi: 10.1007/978-3-030-41032-2_49)

2018

Lee, Jaehyun, Badami, Oves, Carrillo-Nunez, Hamilton, Berrada, Salim, Medina-Bailon, Cristina, Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Adamu-Lema, Fikru, Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2018) Variability predictions for the next technology generations of n-type SixGe1-x nanowire MOSFETs. Micromachines, 9(12), 643. (doi: 10.3390/mi9120643)

Berrada, Salim, Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Carrillo-Nunez, Hamilton, Duan, Meng ORCID: https://orcid.org/0000-0002-0205-9423, Adamu-Lema, Fikru, Lee, Jaehyun, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508, Medina Bailon, Cristina and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2018) NESS: new flexible Nano-Electronic Simulation Software. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 22-25. ISBN 9781538667910 (doi: 10.1109/SISPAD.2018.8551701)

Berrada, Salim, Lee, Jaehyun, Carrillo-Nunez, Hamilton, Medina Bailon, Cristina, Adamu-Lema, Fikru, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2018) Quantum Transport Investigation of Threshold Voltage Variability in Sub-10 nm JunctionlessSi Nanowire FETs. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 244-247. ISBN 9781538667910 (doi: 10.1109/SISPAD.2018.8551638)

Duan, Meng ORCID: https://orcid.org/0000-0002-0205-9423, Cheng, Binjie, Adamu-Lema, Fikru, Asenov, P., Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Wang, Xingsheng, Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Millar, C., Pfaeffli, P. and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2018) Statistical Variability Simulation of Novel Capacitor-less Z2FET DRAM: From Transistor Circuit. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA, 24-26 Sept. 2018, pp. 258-261. ISBN 9781538667903 (doi: 10.1109/SISPAD.2018.8551710)

Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2018) Interplay of RDF and Gate LER Induced Statistical Variability in Negative Capacitance FETs. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA, 24-26 Sept. 2018, pp. 262-265. ISBN 9781538667903 (doi: 10.1109/SISPAD.2018.8551710)

Medina Bailon, Cristina, Sadi, Toufik, Nedjalkov, Mihail, Lee, Jaehyun, Berrada, Salim, Carrillo-Nunez, Hamilton, Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Selberherr, Siegfried and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2018) Impact of the Effective Mass on the Mobility in Si Nanowire Transistors. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 297-300. ISBN 9781538667910 (doi: 10.1109/SISPAD.2018.8551630)

Chen, R. et al. (2018) Variability study of MWCNT local interconnects considering defects and contact resistances - Part I: pristine MWCNT. IEEE Transactions on Electron Devices, 65(11), pp. 4955-4962. (doi: 10.1109/TED.2018.2868421)

Chen, R. et al. (2018) Variability study of MWCNT local interconnects considering defects and contact resistances - Part II: impact of charge transfer doping. IEEE Transactions on Electron Devices, 65(11), pp. 4963-4970. (doi: 10.1109/TED.2018.2868424)

Liang, Jie, Lee, Jaehyun, Berrada, Salim, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508, Pandey, Reetu Raj, Chen, Rongmei, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Todri-Sanial, Aida (2018) Atomistic to circuit-level modeling of doped SWCNT for on-chip interconnects. IEEE Transactions on Nanotechnology, 17(6), pp. 1084-1088. (doi: 10.1109/TNANO.2018.2802320)

Carrillo-Nunez, Hamilton, Lee, Jaehyun, Berrada, Salim, Medina-Bailon, Cristina, Adamu-Lema, Fikru, Luisier, Mathieu, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508 (2018) Random dopant-induced variability in Si-InAs nanowire tunnel FETs: a quantum transport simulation study. IEEE Electron Device Letters, 39(9), pp. 1473-1476. (doi: 10.1109/LED.2018.2859586)

Lee, J. et al. (2018) Understanding electromigration in Cu-CNT composite interconnects: a multiscale electrothermal simulation study. IEEE Transactions on Electron Devices, 65(9), pp. 3884-3892. (doi: 10.1109/TED.2018.2853550)

Nedjalkov, Mihail, Ellinghaus, Paul, Weinbub, Josef, Sadi, Toufik, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366, Dimov, Ivan and Selberherr, Siegfried (2018) Stochastic analysis of surface roughness models in quantum wires. Computer Physics Communications, 228, pp. 30-37. (doi: 10.1016/j.cpc.2018.03.010)

Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2018) Random Discrete Dopant Induced Variability in Negative Capacitance Transistors. In: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain, 19-21 Mar 2018, ISBN 9781538648117 (doi: 10.1109/ULIS.2018.8354732)

Medina Bailon, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carrillo-Nunez, H., Georgiev, V. ORCID: https://orcid.org/0000-0001-6473-2508, Selberherr, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2018) Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors. In: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain, 19-21 Mar 2018, ISBN 9781538648117 (doi: 10.1109/ULIS.2018.8354723)

Medina Bailon, C., Sampedro, C., Padilla, J.L., Godoy, A., Donetti, L., Gamiz, F. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2018) MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections. In: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain, 19-21 Mar 2018, ISBN 9781538648124 (doi: 10.1109/ULIS.2018.8354758)

Carrillo-Nuñez, Hamilton, Mirza, Muhamad M. ORCID: https://orcid.org/0000-0002-1789-224X, Paul, Douglas J. ORCID: https://orcid.org/0000-0001-7402-8530, MacLaren, Donald A. ORCID: https://orcid.org/0000-0003-0641-686X, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508 (2018) Impact of randomly distributed dopants on Ω-gate junctionless silicon nanowire transistors. IEEE Transactions on Electron Devices, 65(5), pp. 1692-1698. (doi: 10.1109/TED.2018.2817919)

Cristoloveanu, S. et al. (2018) A review of the Z²-FET 1T-DRAM memory: operation mechanisms and key parameters. Solid-State Electronics, 143, pp. 10-19. (doi: 10.1016/j.sse.2017.11.012)

Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Dochioiu, Alexandru-Iusti, Adamu-Lema, Fikru, Berrada, Salim, Mirza, Muhammad M. ORCID: https://orcid.org/0000-0002-1789-224X, Paul, Douglas ORCID: https://orcid.org/0000-0001-7402-8530 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2018) Variability Study of High Current Junctionless Silicon Nanowire Transistors. In: 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017, ISBN 9781538627723 (doi: 10.1109/NMDC.2017.8350514)

Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Vila-Nadal, Laia ORCID: https://orcid.org/0000-0002-7718-7227, Cronin, Leroy ORCID: https://orcid.org/0000-0001-8035-5757 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2018) Molecular Based Flash Cell for Low Power Flash Application: Optimization and Variability Evaluation. In: IEEE 12th Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017, pp. 64-65. ISBN 9781538627723 (doi: 10.1109/NMDC.2017.8350505)

Uhlig, B. et al. (2018) Progress on Carbon Nanotube BEOL Interconnects. In: 2018 Design, Automation & Test in Europe Conference & Exhibition (DATE), Dresden, Germany, 19-23 Mar 2018, pp. 937-942. ISBN 9783981926309 (doi: 10.23919/DATE.2018.8342144)

Sadi, Toufik, Mehonic, Adnan, Montesi, Luca, Buckwell, Mark, Kenyon, Anthony and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2018) Investigation of resistance switching in SiOx RRAM cells using a 3D multi-scale kinetic Monte Carlo simulator. Journal of Physics: Condensed Matter, 30(8), 084005. (doi: 10.1088/1361-648X/aaa7c1) (PMID:29334362)

Liang, J., Lee, J., Berrada, S., Georgiev, V. ORCID: https://orcid.org/0000-0001-6473-2508, Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366, Azemard-Crestani, A. and Todri-Sanial, A. (2018) Atomistic to Circuit Level Modeling of Defective Doped SWCNTs with Contacts for On-Chip Interconnect Application. In: 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017, pp. 66-67. ISBN 9781538627723 (doi: 10.1109/NMDC.2017.8350506)

2017

Navarro, C. et al. (2017) Z²-FET as capacitor-less eDRAM cell for high-density integration. IEEE Transactions on Electron Devices, 64(12), pp. 4904-4909. (doi: 10.1109/TED.2017.2759308)

Navarro, C. et al. (2017) Extended analysis of the Z²-FET: operation as capacitorless eDRAM. IEEE Transactions on Electron Devices, 64(11), pp. 4486-4491. (doi: 10.1109/TED.2017.2751141)

Thirunavukkarasu, V. et al. (2017) Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs. Superlattices and Microstructures, 111, pp. 649-655. (doi: 10.1016/j.spmi.2017.07.020)

Adamu-Lema, Fikru, Duan, Meng ORCID: https://orcid.org/0000-0002-0205-9423, Navarro, Carlos, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508, Cheng, Binjie, Wang, Xingsheng, Millar, Campbell, Gamiz, Francisco and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2017) Simulation Based DC and Dynamic Behaviour Characterization of Z2FET. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, pp. 317-320. (doi: 10.23919/SISPAD.2017.8085328)

Al-Ameri, Talib ORCID: https://orcid.org/0000-0002-0666-2449, Georgiev, V.P. ORCID: https://orcid.org/0000-0001-6473-2508, Adamu-Lema, Fikru and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2017) Does a Nanowire Transistor Follow the Golden Ratio? A 2D Poisson-Schrödinger/3D Monte Carlo Simulation Study. In: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan, 7-9 Sept 2017, (doi: 10.23919/SISPAD.2017.8085263)

Duan, M. ORCID: https://orcid.org/0000-0002-0205-9423, Adamu-Lema, F., Cheng, B., Navarro, C., Wang, X., Georgiev, V.P. ORCID: https://orcid.org/0000-0001-6473-2508, Gamiz, F., Millar, C. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2017) 2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, pp. 325-328. (doi: 10.23919/SISPAD.2017.8085330)

Lee, J. et al. (2017) The Impact of Vacancy Defects on CNT Interconnects: From Statistical Atomistic Study to Circuit Simulations. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, pp. 157-160. (doi: 10.23919/SISPAD.2017.8085288)

Lee, J. et al. (2017) Atoms-to-Circuits Simulation Investigation of CNT Interconnects for Next Generation CMOS Technology. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, pp. 153-156. (doi: 10.23919/SISPAD.2017.8085287)

Wang, Xingsheng, Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Adamu-Lema, Fikru, Gerrer, Louis, Amoroso, Salvatore M. and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2017) TCAD-based design technology co-optimization for variability in nanoscale SOI FinFETs. In: Deleonibus, Simon (ed.) Integrated Nanodevice and Nanosystem Fabrication. Series: Pan Stanford series on intelligent nanosystems. Pan Stanford: Singapore, pp. 215-252. ISBN 9789814774222

Al-Ameri, Talib ORCID: https://orcid.org/0000-0002-0666-2449, Georgiev, V.P. ORCID: https://orcid.org/0000-0001-6473-2508, Adamu-Lema, F. and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2017) Simulation study of vertically stacked lateral Si nanowires transistors for 5 nm CMOS applications. IEEE Journal of the Electron Devices Society, 5(6), pp. 466-472. (doi: 10.1109/JEDS.2017.2752465)

Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Mirza, Muhammad M. ORCID: https://orcid.org/0000-0002-1789-224X, Dochioiu, Alexandru-Iustin, Lema, Fikru-Adamu, Amoroso, Salvatore M., Towie, Ewan, Riddet, Craig, MacLaren, Donald A. ORCID: https://orcid.org/0000-0003-0641-686X, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Paul, Douglas J. ORCID: https://orcid.org/0000-0001-7402-8530 (2017) Experimental and simulation study of 1D silicon nanowire transistors using heavily doped channels. IEEE Transactions on Nanotechnology, 16(5), pp. 727-735. (doi: 10.1109/TNANO.2017.2665691)

Berrada, Salim, Lee, Jaehyun, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2017) Effect of the Quantum Mechanical Tunneling on the Leakage Current in Ultra-scaled Si Nanowire Transistors. 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017.

Al-Ameri, Talib Mahmood Ali ORCID: https://orcid.org/0000-0002-0666-2449 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2017) Vertically Stacked Lateral Si80Ge20 Nanowires Transistors for 5 nm CMOS Applications. In: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2017), Athens, Greece, 3-5 Apr 2017, pp. 101-104. ISBN 9781509053131 (doi: 10.1109/ULIS.2017.7962612)

Medina-Bailon, C., Sadi, T., Sampedro, C., Padilla, J.L., Godoy, A., Donetti, L., Georgiev, V. ORCID: https://orcid.org/0000-0001-6473-2508, Gamiz, F. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2017) Assessment of Gate Leakage Mechanism Utilizing Multi-Subband Ensemble Monte Carlo. In: 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Athens, Greece, 03-05 Apr 2017, pp. 144-147. ISBN 9781509053148 (doi: 10.1109/ULIS.2017.7962585)

Zhang, Zexuan, Zhang, Zhe, Guo, Shaofeng, Wang, Runsheng, Wang, Xingsheng, Cheng, Binjie, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Huang, Ru (2017) Comparative Study on RTN Amplitude in Planar and FinFET Devices. In: IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2017), Toyama, Japan, 28 Feb - 2 Mar 2017, pp. 109-110. ISBN 9781509046607 (doi: 10.1109/EDTM.2017.7947530)

Duan, M. et al. (2017) Interaction Between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction. In: 2017 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2-6 Apr 2017, XT5.1-XT5.7. (doi: 10.1109/IRPS.2017.7936419)

Duan, Meng ORCID: https://orcid.org/0000-0002-0205-9423, Zhang, Jian Fu, Ji, Zhigang, Zhang, Wei Dong, Kaczer, Ben and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2017) Key issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs. IEEE Transactions on Electron Devices, 64(6), pp. 2478-2484. (doi: 10.1109/TED.2017.2691008)

Al-Ameri, Talib ORCID: https://orcid.org/0000-0002-0666-2449, Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Sadi, Toufik, Wang, Yijiao, Adamu-Lema, Fikru, Wang, Xingsheng, Amoroso, Salvatore M., Towie, Ewan, Brown, Andrew and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2017) Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit. Solid-State Electronics, 129, pp. 73-80. (doi: 10.1016/j.sse.2016.12.015)

Lee, Jaehyun, Sadi, Toufik, Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Todri-Sanial, Aida and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2017) A Hierarchical Model for CNT and Cu-CNT Composite Interconnects: From Density Functional Theory to Circuit-Level Simulations. International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017. (Unpublished)

Jiang, Xiaobo, Guo, Shaofeng, Wang, Runsheng, Wang, Yuan, Wang, Xingsheng, Cheng, Binjie, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Huang, Ru (2017) New Insights into the Near-Threshold Design in Nanoscale FinFET Technology for Sub-0.2V Applications. In: 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 03-07 Dec 2016, 28.4.1-28.4.4. ISBN 9781509039029 (doi: 10.1109/IEDM.2016.7838499)

Zhang, Zhe, Zhang, Zexuan, Wang, Runsheng, Jiang, Xiaobo, Guo, Shaofeng, Wang, Yangyuan, Wang, Xingsheng, Cheng, Binjie, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Huang, Ru (2017) New approach for understanding “random device physics” from channel percolation perspectives: Statistical simulations, key factors and experimental results. In: 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 03-07 Dec 2016, 7.2.1-7.2.4. ISBN 9781509039029 (doi: 10.1109/IEDM.2016.7838366)

Sadi, Toufik, Wang, Liping and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2017) Multi-Scale Electrothermal Simulation and Modelling of Resistive Random Access Memory Devices. In: 26th International Workshop on Power and Timing Modeling, Optimization and Simulation (PATMOS 2016), Bremen, Germany, 21-23 Sept 2016, pp. 33-37. ISBN 9781509007332 (doi: 10.1109/PATMOS.2016.7833422)

Adamu-Lema, Fikru, Duan, Meng ORCID: https://orcid.org/0000-0002-0205-9423, Berrada, Salim, Lee, Jaehyun, Al-Ameri, T. ORCID: https://orcid.org/0000-0002-0666-2449, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2017) Modelling and simulation of advanced semiconductor devices. ECS Transactions, 80(4), pp. 33-42. (doi: 10.1149/08004.0033ecst)

Al-Ameri, Talib ORCID: https://orcid.org/0000-0002-0666-2449, Georgiev, V.P. ORCID: https://orcid.org/0000-0001-6473-2508, Adamu-Lema, F. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2017) Position-Dependent Performance in 5 nm Vertically Stacked Lateral Si Nanowires Transistors. International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017.

Al-Ameri, Talib ORCID: https://orcid.org/0000-0002-0666-2449, Georgiev, V.P. ORCID: https://orcid.org/0000-0001-6473-2508, Adamu-Lema, F. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2017) Variability-Aware Simulations of 5 nm Vertically Stacked Lateral Si Nanowires Transistors. International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017.

Liang, J. et al. (2017) A Physics-based Investigation of Pt-salt Doped Carbon Nanotubes for Local Interconnects. In: 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 02-06 Dec 2017, 35.5.1-35.5.4. ISBN 9781538635599 (doi: 10.1109/IEDM.2017.8268502)

Medina-Bailon, C., Sampedro, C., Padilla, J.L., Godoy, A., Donetti, L., Gamiz, F., Sadi, T., Georgiev, V. ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2017) Multi-subband Ensemble Monte Carlo Study of Tunneling Leakage mechanisms. In: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan, 7-9 Sept 2017, pp. 281-284. ISBN 9784863486102 (doi: 10.23919/SISPAD.2017.8085319)

Todri-Sanial, A. et al. (2017) A survey of carbon nanotube interconnects for energy efficient integrated circuits. IEEE Circuits and Systems Magazine, 17(2), pp. 47-62. (doi: 10.1109/MCAS.2017.2689538)

2016

Al-Ameri, Talib ORCID: https://orcid.org/0000-0002-0666-2449, Georgiev, V.P. ORCID: https://orcid.org/0000-0001-6473-2508, Lema, Adamu, Sadi, T., Towie, E., Riddet, C., Alexander, C. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2016) Performance of Vertically Stacked Horizontal Si Nanowires Transistors: A 3D Monte Carlo / 2D Poisson Schrodinger Simulation Study. In: 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Toulouse, France, 9-12 Oct 2016, ISBN 9781509043521 (doi: 10.1109/NMDC.2016.7777117)

Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Mirza, Muhammad M. ORCID: https://orcid.org/0000-0002-1789-224X, Dochioiu, Alexandru-Iustin, Lema, Fikru-Adamu, Amoroso, Salvatore M., Towie, Ewan, Riddet, Craig, MacLaren, Donald A. ORCID: https://orcid.org/0000-0003-0641-686X, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Paul, Douglas J. ORCID: https://orcid.org/0000-0001-7402-8530 (2016) Experimental and Simulation Study of a High Current 1D Silicon Nanowire Transistor Using Heavily Doped Channels. In: 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Toulouse, France, 9-12 Oct 2016, ISBN 9781509043521 (doi: 10.1109/NMDC.2016.7777084)

Sadi, Toufik, Towie, Ewan, Nedjalkov, Mihail, Riddet, Craig, Alexander, Craig, Wang, Liping, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508, Brown, Andrew, Millar, Campbell and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2016) One-Dimensional Multi-Subband Monte Carlo Simulation of Charge Transport in Si Nanowire Transistors. In: SISPAD 2016: International Conference on Simulation of Semiconductor Processes and Devices, Nuremberg, Germany, 6-8 Sept 2016, pp. 23-26. ISBN 9781509008186 (doi: 10.1109/SISPAD.2016.7605139)

Al-Ameri, Talib ORCID: https://orcid.org/0000-0002-0666-2449, Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Lema, Fikru-Adama, Sadi, Toufik, Wang, Xingsheng, Towie, Ewan, Riddet, Craig, Alexander, Craig and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2016) Impact of Strain on the Performance of Si Nanowires Transistors at the Scaling Limit: A 3D Monte Carlo/2D Poisson Schrodinger Simulation Study. In: SISPAD 2016: International Conference on Simulation of Semiconductor Processes and Devices, Nuremberg, Germany, 6-8 Sept 2016, pp. 213-216. ISBN 9781509008186 (doi: 10.1109/SISPAD.2016.7605185)

Sadi, Toufik, Wang, Liping and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2016) Advanced Simulation of Resistance Switching in Si-rich Silica RRAM Devices. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 Jun 2016. ISBN 9781509007264 (doi: 10.1109/SNW.2016.7578049)

Duan, Meng ORCID: https://orcid.org/0000-0002-0205-9423, Zhang, Jian Fu, Ji, Zhigang, Zhang, Wei Dong, Vigar, David, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366, Gerrer, Louis, Chandra, Vikas, Aitken, Rob and Kaczer, Ben (2016) Insight into electron traps and their energy distribution under positive bias temperature stress and hot carrier aging. IEEE Transactions on Electron Devices, 63(9), pp. 3642-3648. (doi: 10.1109/TED.2016.2590946)

Zhang, Zexuan, Zhang, Zhe, Guo, Shaofeng, Wang, Runsheng, Wang, Xingsheng, Cheng, Binjie, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Huang, Ru (2016) Investigation on the Amplitude of Random Telegraph Noise (RTN) in Nanoscale MOSFETs: Scaling Limit of “Hole in the Inversion Layer” Model. In: 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, China, 25-28 Oct 2016, pp. 453-455. ISBN 9781467397193 (doi: 10.1109/ICSICT.2016.7998949)

Jiang, Xiaobo, Guo, Shaofeng, Wang, Runsheng, Wang, Xingsheng, Cheng, Binjie, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Huang, Ru (2016) A device-level characterization approach to quantify the impacts of different random variation sources in FinFET technology. IEEE Electron Device Letters, 37(8), pp. 962-965. (doi: 10.1109/LED.2016.2581878)

Al-Ameri, Talib ORCID: https://orcid.org/0000-0002-0666-2449, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508, Adamu-Lema, Fikru and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2016) Influence of Quantum Confinement Effects and Device Electrostatic Driven Performance in Ultra-Scaled SixGe1-x Nanowire Transistors. In: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2016), Vienna, Austria, 25-27 Jan 2016, pp. 234-237. ISBN 9781467386104 (doi: 10.1109/ULIS.2016.7440096)

Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366, Wang, Y., Cheng, B., Wang, X., Asenov, P., Al-Ameri, T. ORCID: https://orcid.org/0000-0002-0666-2449 and Georgiev, V.P. ORCID: https://orcid.org/0000-0001-6473-2508 (2016) Nanowire Transistor Solutions for 5NM and Beyond. In: 2016 17th International Symposium on Quality Electronic Design (ISQED), Santa Clara, CA, USA, 15-16 Mar 2016, pp. 269-274. (doi: 10.1109/ISQED.2016.7479212)

Sadi, Toufik, Wang, Liping, Gao, David, Mehonic, Adnan, Montesi, Luca, Buckwell, Mark, Kenyon, Anthony, Shluger, Alexander and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2016) Advanced physical modeling of SiOx resistive random access memories. In: International Conference on Simulation of Semiconductor Processes and Devices, Nuremberg, Germany, 06-08 Sep 2016, pp. 149-152. ISBN 9781509008186 (doi: 10.1109/SISPAD.2016.7605169)

Wang, L., Sadi, T., Brown, A.R., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2016) Simulation Analysis of the Electro-Thermal Performance of SOI FinFETs. In: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2016), Vienna, Austria, 25-27 Jan 2016, pp. 56-59. ISBN 9781467386098 (doi: 10.1109/ULIS.2016.7440051)

2015

Georgiev, V.P. ORCID: https://orcid.org/0000-0001-6473-2508, Ali, T. ORCID: https://orcid.org/0000-0002-0666-2449, Wang, Y., Gerrer, L., Amoroso, S.M. and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2015) Influence of Quantum Confinement Effects over Device Performance in Circular and Elliptical Silicon Nanowire Transistors. In: 2015 International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA, 2-4 Sept 2015, (doi: 10.1109/IWCE.2015.7301960)

Donetti, Luca, Sampedro, Carlos, Gamiz, Francisco, Godoy, Andres, Garcıa-Ruız, Francisco J., Towie, Ewan, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508, Amoroso, Salvatore Maria, Riddet, Craig and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2015) Multi-Subband Ensemble Monte Carlo Simulation of Si Nanowire MOSFETs. In: SISPAD: International Conference on Semiconductor Process and Device Simulations, Washington, DC, USA, 9-11 Sept 2015, pp. 353-356. ISBN 9781467378581 (doi: 10.1109/SISPAD.2015.7292332)

Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Amoroso, Salvatore M., Gerrer, Louis, Adamu-Lema, Fikru and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2015) Interplay between quantum mechanical effects and a discrete trap position in ultrascaled FinFETs. In: SISPAD 2015: International Conference on Semiconductor Process and Device Simulations, Washington, DC, USA, 9-11 Sept 2015, pp. 246-249. ISBN 9781467378581 (doi: 10.1109/SISPAD.2015.7292305)

Ding, Jie, Reid, Dave, Asenov, Plamen, Millar, Campbell and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2015) Influence of transistors with BTI-induced aging on SRAM write performance. IEEE Transactions on Electron Devices, 62(10), pp. 3133-3138. (doi: 10.1109/TED.2015.2462319)

Wang, Xingsheng, Cheng, Binjie, Reid, David, Pender, Andrew, Asenov, Plamen, Millar, Campbell and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2015) FinFET centric variability-aware compact model extraction and generation technology supporting DTCO. IEEE Transactions on Electron Devices, 62(10), pp. 3139-3146. (doi: 10.1109/TED.2015.2463073)

Wang, Y. et al. (2015) Simulation study of the impact of quantum confinement on the electrostatically driven oerformance of n-type nanowire transistors. IEEE Transactions on Electron Devices, 62(10), pp. 3229-3236. (doi: 10.1109/TED.2015.2470235)

Gerrer, L., Georgiev, V. ORCID: https://orcid.org/0000-0001-6473-2508, Amoroso, S.M., Towie, E. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2015) Comparison of Si <100> and <110> crystal orientation nanowire transistor reliability using Poisson–Schrödinger and classical simulations. Microelectronics Reliability, 55(9-10), pp. 1307-1312. (doi: 10.1016/j.microrel.2015.06.094)

Wang, Liping, Brown, Andrew R., Nedjalkov, Mihail, Alexander, Craig, Cheng, Binjie, Millar, Campbell and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2015) Impact of self-heating on the statistical variability in bulk and SOI FinFETs. IEEE Transactions on Electron Devices, 62(7), pp. 2106-2112. (doi: 10.1109/TED.2015.2436351)

Amoroso, Salvatore Maria, Adamu-Lema, Fikru, Brown, Andrew R. and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2015) A mobility correction approach for overcoming artifacts in atomistic drift-diffusion simulation of nano-MOSFETs. IEEE Transactions on Electron Devices, 62(6), pp. 2056-2060. (doi: 10.1109/TED.2015.2419815)

Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366, Cheng, Binjie, Wang, Xingsheng, Brown, Andrew Robert, Millar, Campbell, Alexander, Craig, Amoroso, Salvatore Maria, Kuang, Jente B. and Nassif, Sani R. (2015) Variability aware simulation based design- technology cooptimization (DTCO) flow in 14 nm FinFET/SRAM cooptimization. IEEE Transactions on Electron Devices, 62(6), pp. 1682-1690. (doi: 10.1109/TED.2014.2363117)

Jiang, Xiaobo, Wang, Junyao, Wang, Xingsheng, Wang, Runsheng, Cheng, Binjie, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366, Wei, Lan and Huang, Ru (2015) New assessment methodology based on energy–delay–yield cooptimization for nanoscale CMOS technology. IEEE Transactions on Electron Devices, 62(6), pp. 1746-1753. (doi: 10.1109/TED.2015.2396575)

Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Amoroso, Salvatore Maria, Ali, Talib Mahmood, Vila-Nadal, Laia ORCID: https://orcid.org/0000-0002-7718-7227, Busche, Christoph ORCID: https://orcid.org/0000-0002-3493-2020, Cronin, Leroy ORCID: https://orcid.org/0000-0001-8035-5757 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2015) Comparison between bulk and FDSOI POM flash cell: a multiscale simulation study. IEEE Transactions on Electron Devices, 62(2), pp. 680-684. (doi: 10.1109/TED.2014.2378378)

Adamu-Lema, F., Wang, X., Amoroso, S.M., Gerrer, L., Millar, C. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2015) Comprehensive 'Atomistic' Simulation of Statistical Variability and Reliability in 14 nm Generation FinFETs. In: 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington D.C.,USA, 09-11 Sep 2015, pp. 157-160. ISBN 9781467378598

Al-Ameri, T. ORCID: https://orcid.org/0000-0002-0666-2449, Wang, Y., Georgiev, V.P. ORCID: https://orcid.org/0000-0001-6473-2508, Adamu-Lema, F., Wang, X. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2015) Correlation between Gate Length, Geometry and Electrostatic Driven Performance in Ultra-Scaled Silicon Nanowire Transistors. In: 10th IEEE Nanotechnology Materials and Devices Conference (NMDC), Anchorage, AK, USA, 13-16 Sep 2015, pp. 30-34. ISBN 9781467393621 (doi: 10.1109/NMDC.2015.7439240)

Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2015) Multi-scale computational framework for evaluating of the performance of molecular based flash cells. Lecture Notes in Computer Science, 8962, pp. 196-203. (doi: 10.1007/978-3-319-15585-2_22)

Jiang, Xiaobo, Wang, Xingsheng, Wang, Runsheng, Cheng, Binjie, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Huang, Ru (2015) Predictive Compact Modeling of Random Variations in FinFET Technology for 16/14nm Node and Beyond. In: International Electron Devices Meeting (IEDM), Washington, D.C., USA, 7-9 Dec 2015, 28.3.1-28.3.4. ISBN 9781467398947 (doi: 10.1109/IEDM.2015.7409787)

Sadi, Toufik, Wang, Liping, Gerrer, Louis and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2015) Physical Simulation of Si-Based Resistive Random-Access Memory Devices. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, USA, 9-11 Sep 2015, pp. 385-388. ISBN 9781467378581 (doi: 10.1109/SISPAD.2015.7292340)

Sadi, Toufik, Wang, Liping, Gerrer, Louis, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2015) Self-consistent physical modeling of SiOx-based RRAM structures. In: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA, 2-4 Sep 2015, pp. 1-4. ISBN 978069251523515 (doi: 10.1109/IWCE.2015.7301981)

Wang, Junyao, Xiaobo, Jiang, Wang, Xingsheng, Wang, Runsheng, Cheng, Binjie, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366, Wei, Lan and Huang, Ru (2015) Variation-Aware Energy-Delay Optimization Method for Device/Circuit Co-Design. In: China Semiconductor Technology International Conference (CSTIC), Shanghai, China, 15-16 Mar 2015, pp. 1-3. ISBN 9781479972418 (doi: 10.1109/CSTIC.2015.7153331)

Wang, L., Sadi, T., Nedjalkov, M., Brown, A.R., Alexander, C., Cheng, B., Millar, C. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2015) An Advanced Electro-Thermal Simulation Methodology for Nanoscale Device. In: International Workshop on Computational Electronics (IWCE), West Lafayette, USA, 2-4 Sep 2015, pp. 1-4. (doi: 10.1109/IWCE.2015.7301989)

Wang, X., Reid, D., Wang, L., Burenkov, A., Millar, C., Lorenz, J. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2015) Hierarchical Variability-Aware Compact Models of 20nm Bulk CMOS. In: 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington D.C.,USA, 09-11 Sep 2015, pp. 325-328. ISBN 9781467378598

Wang, X., Wang, Y., Towie, E., Cheng, B., Liu, X. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2015) Discrete Dopant Impact on the 7 nm Nanowire Transistor Performance. In: 2015 International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan, 27-30 Sept 2015, pp. 84-85. (Unpublished)

2014

Amoroso, Salvatore Maria, Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Gerrer, Louis, Towie, Ewan, Wang, Xingsheng, Riddet, Craig, Brown, Andrew Robert and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2014) Inverse scaling trends for charge-trapping-induced degradation of FinFETs performance. IEEE Transactions on Electron Devices, 61(12), pp. 4014-4018. (doi: 10.1109/TED.2014.2363212)

Busche, C. et al. (2014) Design and fabrication of memory devices based on nanoscale polyoxometalate clusters. Nature, 515(7528), pp. 545-549. (doi: 10.1038/nature13951) (PMID:25409147)

Adamu-Lema, Fikru, Wang, Xingsheng, Amoroso, Salvatore Maria, Riddet, Craig, Cheng, Binjie, Shifren, Lucian, Aitken, Robert, Sinha, Saurahb, Yeric, Greg and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2014) Performance and variability of doped multithreshold FinFETs for 10-nm CMOS. IEEE Transactions on Electron Devices, 61(10), pp. 3372-3378. (doi: 10.1109/TED.2014.2346544)

Duan, Meng ORCID: https://orcid.org/0000-0002-0205-9423, Zhang, Jian Fu, Ji, Zhigang, Zhang, Wei Dong, Kaczer, Ben, Schram, Tom, Ritzenthaler, Romain, Groeseneken, Guido and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2014) Development of a technique for characterizing bias temperature instability-induced device-to-device variation at SRAM-relevant conditions. IEEE Transactions on Electron Devices, 61(9), pp. 3081-3089. (doi: 10.1109/TED.2014.2335053)

Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508, Amoroso, Salvatore and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2014) 3D Multi-Subband Ensemble Monte Carlo Simulator of FinFETs and nanowire transistors. In: 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan, 9-11 Sep 2014,

Gerrer, L., Amoroso, S.M., Hussin, R. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2014) RTN distribution comparison for bulk, FDSOI and FinFETs devices. Microelectronics Reliability, 54(9-10), pp. 1749-1752. (doi: 10.1016/j.microrel.2014.07.013)

Hussin, Razaidi, Amoroso, Salvatore Maria, Gerrer, Louis, Kaczer, Ben, Weckx, Pieter, Franco, Jacopo, Vanderheyden, Annelies, Vanhaeren, Danielle, Horiguchi, Naoto and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2014) Interplay between statistical variability and reliability in contemporary pmosfets: measurements versus simulations. IEEE Transactions on Electron Devices, 61(9), pp. 3265-3273. (doi: 10.1109/TED.2014.2336698)

Wang, Xingsheng, Reid, Dave, Wang, Liping, Burenkov, Alexander, Millar, Campbell, Cheng, Binjie, Lange, Andre, Lorenz, Juergen, Baer, Eberhard and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2014) Variability-aware compact model strategy for 20-nm bulk MOSFETs. In: 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama Japan, 8-11 Sep 2014, pp. 293-296. ISBN 9781479952878

Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366, Adamu-Lema, Fikru, Wang, Xingsheng and Amoroso, Salvatore Maria (2014) Problems with the continuous doping TCAD simulations of decananometer CMOS transistors. IEEE Transactions on Electron Devices, 61(8), pp. 2745-2751. (doi: 10.1109/TED.2014.2332034)

Wang, Xingsheng, Brown, Andrew R., Cheng, Binjie, Roy, Scott and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2014) Drain bias effects on statistical variability and reliability and related subthreshold variability in 20-nm bulk planar MOSFETs. Solid-State Electronics, 98, pp. 99-105. (doi: 10.1016/j.sse.2014.04.017)

Amoroso, Salvatore Maria, Gerrer, Louis, Hussin, Razaidi, Adamu-Lema, Fikru and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2014) Time-dependent 3-D statistical KMC simulation of reliability in nanoscale MOSFETs. IEEE Transactions on Electron Devices, 61(6), pp. 1956-1962. (doi: 10.1109/TED.2014.2318172)

Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Markov, Stanislav, Vila-Nadal, Laia ORCID: https://orcid.org/0000-0002-7718-7227, Busche, Christoph ORCID: https://orcid.org/0000-0002-3493-2020, Cronin, Leroy ORCID: https://orcid.org/0000-0001-8035-5757 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2014) Optimization and evaluation of variability in the programming window of a flash cell with molecular metal-oxide storage. IEEE Transactions on Electron Devices, 61(6), pp. 2019-2026. (doi: 10.1109/TED.2014.2315520)

Amoroso, Salvatore Maria, Gerrer, Louis, Nedjalkov, Mihail, Hussin, Razaidi, Alexander, Craig and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2014) Modeling Carrier Mobility in Nano-MOSFETs in the Presence of Discrete Trapped Charges: Accuracy and Issues. IEEE Transactions on Electron Devices, 61(5), pp. 1292-1298. (doi: 10.1109/TED.2014.2312820)

Gerrer, L., Ding, J., Amoroso, S.M., Adamu-Lema, F., Hussin, R., Reid, D., Millar, C. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2014) Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: a review. Microelectronics Reliability, 54(4), pp. 682-697. (doi: 10.1016/j.microrel.2014.01.024)

Sellier, J.M., Amoroso, S.M., Nedjalkov, M., Selberherr, S., Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 and Dimov, I. (2014) Electron dynamics in nanoscale transistors by means of Wigner and Boltzmann approaches. Physica A: Statistical Mechanics and its Applications, 398, pp. 194-198. (doi: 10.1016/j.physa.2013.12.045)

Adamu-Lema, F., Amoroso, S.M., Wang, X., Cheng, B., Shifren, L., Aitken, R., Sinha, S., Yeric, G. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2014) The discrepancy between the uniform and variability aware atomistic TCAD simulations of decananometer bulk MOSFETs and FinFETs. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, 9-11 Sept. 2014, pp. 285-288. ISBN 9781479952878 (doi: 10.1109/SISPAD.2014.6931619)

Amoroso, Salvatore, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508, Towie, Ewan, Riddet, Craig and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2014) Metamorphosis of a nanowire: a 3-D coupled mode space NEGF study. In: 2014 International Workshop on Computational Electronics (IWCE), Paris, France, 3-6 June 2014, pp. 1-4. (doi: 10.1109/IWCE.2014.6865854)

Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366, Cheng, Binjie, Adamu-Lema, Fikru, Shifren, Lucian, Sinha, Saurabh, Ridet, Craig, Alexander, Craig L., Brown, Andrew R., Wang, Xingsheng and Amoroso, Salvatore M. (2014) Predictive simulation of future CMOS technologies and their impact on circuits. In: 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2014), Guilin, China, 28-31 Oct. 2014, pp. 1411-1414.

Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Amoroso, Salvatore M., Vila-Nadal, Laia ORCID: https://orcid.org/0000-0002-7718-7227, Busche, Christoph ORCID: https://orcid.org/0000-0002-3493-2020, Cronin, Leroy ORCID: https://orcid.org/0000-0001-8035-5757 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2014) FDSOI Molecular Flash Cell with Reduced Variability for Low Power Flash Applications. In: 44th European Solid-State Device Research Conference (ESSDERC), Venice, Italy, 22-26 Sep 2014, pp. 353-356. ISBN 9781479943760 (doi: 10.1109/ESSDERC.2014.6948833)

Lorenz, Juergen, Bar, Eberhard, Burenkov, Alexander, Evanschitzky, Peter, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366, Wang, Liping, Wang, Xingsheng, Brown, Andrew R., Millar, Campbell and Reid, Dave (2014) Simultaneous simulation of systematic and stochastic process variations. In: Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama Japan, 8-11 Sept. 2014. IEEE, pp. 289-292. ISBN 9781479952878 (doi: 10.1109/SISPAD.2014.6931620)

Wang, L., Brown, A.R., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2014) 3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity. In: 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2014), Yokohama, Japan, 9-11 Sept. 2014, pp. 269-272. (doi: 10.1109/SISPAD.2014.6931615)

Wang, L., Brown, A.R., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2014) 3D coupled electro-thermal simulations for SOI FinFET with statistical variations including the fin shape dependence of the thermal conductivity. In: 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2014), Guilin, China, 28-31 Oct 2014,

Wang, Liping, Brown, Andrew, Cheng, Binjie and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2014) Simulation of 3D FinFET doping profiles introduced by ion implantation and the impact on device performance. In: The 20th International Conference on Ion Implantation Technology (IIT 2014), Portland, OR, USA, 26 June - 4 July 2014, pp. 1-4. (doi: 10.1109/IIT.2014.6940008)

Wang, Liping, Brown, Andrew R., Millar, Campbell, Burenkov, Alexander, Wang, Xingsheng, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Lorenz, Jurgen (2014) Simulation for statistical variability in realistic 20nm MOSFET. In: 15th International Conference On Ultimate Integration On Silicon (ULIS2014), Stockholm, Sweden, 7-9 April 2014, pp. 5-8. (doi: 10.1109/ULIS.2014.6813892)

Wang, X., Cheng, B., Brown, A.R., Millar, C. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2014) Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability. In: 44th European Solid-State Device Research Conference (ESSDERC), Venice, Italy, 22-26 Sep 2014, pp. 349-352. ISBN 9781479943760

Wang, Xingsheng, Cheng, Binjie, Millar, Campbell, Reid, Dave and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2014) Statistical aspects of FinFET based SRAM metrics subject to process and statistical variability. In: 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2014), Guilin, China, 28-31 Oct 2014, pp. 702-704.

2013

Vilà-Nadal, Laia ORCID: https://orcid.org/0000-0002-7718-7227, Mitchell, Scott G., Markov, Stanislav, Busche, Christoph ORCID: https://orcid.org/0000-0002-3493-2020, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Cronin, Leroy ORCID: https://orcid.org/0000-0001-8035-5757 (2013) Towards polyoxometalate-cluster-based nano-electronics. Chemistry: A European Journal, 19(49), pp. 16502-16511. (doi: 10.1002/chem.201301631)

Wang, Xingsheng, Cheng, Binjie, Brown, Andrew R., Millar, Campbell, Kuang, Jente B., Nassif, Sani and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2013) Statistical variability and reliability and the impact on corresponding 6T-SRAM cell design for a 14-nm node SOI FinFET technology. IEEE Design and Test, 30(6), pp. 18-28. (doi: 10.1109/MDAT.2013.2266395)

Gerrer, Louis, Amoroso, Salvatore Maria, Markov, Stanislav, Adamu-Lema, Fikru and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2013) 3-D statistical simulation comparison of oxide reliability of planar MOSFETs and FinFET. IEEE Transactions on Electron Devices, 60(12), pp. 4008-4013. (doi: 10.1109/TED.2013.2285588)

Mohd Zain, Anis Suhaila, Markov, Stanislav, Cheng, Binjie and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2013) Comprehensive study of the statistical variability in a 22nm fully depleted ultra-thin-body SOI MOSFET. Solid-State Electronics, 90, pp. 51-55. (doi: 10.1016/j.sse.2013.02.052)

Wang, Liping, Brown, Andrew R., Cheng, Binjie and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2013) Analytical models for three-dimensional ion implantation profiles in FinFETs. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 32(12), pp. 2004-2008. (doi: 10.1109/TCAD.2013.2277975)

Wang, X., Cheng, B., Brown, A., Millar, C., Kuang, J.B., Nassif, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2013) Impact of statistical variability and charge trapping on 14 nm SOI finFET SRAM cell stability. In: 43rd European Solid-State Device Research Conference (ESSDERC), Bucharest, Romania, 16-20 Sep 2013, pp. 234-237. (doi: 10.1109/ESSDERC.2013.6818862)

Duan, M. ORCID: https://orcid.org/0000-0002-0205-9423, Zhang, J., Ji, Z., Zhang, W.D., Kaczer, B., Schram, T., Ritzenthaler, R., Groeseneken, G. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2013) New analysis method for time-dependent device-to-device variation accounting for within-device fluctuation. IEEE Transactions on Electron Devices, 60(8), pp. 2505-2511. (doi: 10.1109/TED.2013.2270893)

Wang, X., Cheng, B., Brown, A.R., Millar, C., Kuang, J.B., Nassif, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2013) Interplay between process-induced and statistical variability in 14-nm CMOS technology double-gate SOI FinFETs. IEEE Transactions on Electron Devices, 60(8), pp. 2485-2492. (doi: 10.1109/TED.2013.2267745)

Amoroso, S.M., Compagnoni, C.M., Ghetti, A., Gerrer, L., Spinelli, A.S., Lacaita, A.L. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2013) Investigation of the RTN Distribution of nanoscale MOS devices from subthreshold to on-state. IEEE Electron Device Letters, 34(5), pp. 683-685. (doi: 10.1109/LED.2013.2250477)

Wang, Xingsheng, Adamu-Lema, Fikru, Cheng, Binjie and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2013) Geometry, temperature, and body bias dependence of statistical variability in 20-nm bulk CMOS technology: a comprehensive simulation analysis. IEEE Transactions on Electron Devices, 60(5), pp. 1547-1554. (doi: 10.1109/TED.2013.2254490)

Georgiev, V.P. ORCID: https://orcid.org/0000-0001-6473-2508, Towie, E.A. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2013) Impact of precisely positioned dopants on the performance of an ultimate silicon nanowire transistor: a full three-dimensional NEGF simulation study. IEEE Transactions on Electron Devices, 60(3), pp. 965-971. (doi: 10.1109/TED.2013.2238944)

Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366, Cheng, B., Brown, A.R. and Wang, X. (2013) Impact of statistical variability on FinFET technology: from device, statistical compact modelling to statistical circuit simulation. In: van Roermund, A.H.M., Baschirotto, A. and Steyaert, M. (eds.) Nyquist AD Converters, Sensor Interfaces, and Robustness. Springer, pp. 281-291. ISBN 9781461445876 (doi: 10.1007/978-1-4614-4587-6_15)

Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366, Cheng, B., Wang, X., Brown, A.R., Reid, D., Millar, C. and Alexander, C. (2013) Simulation based transistor-SRAM co-design in the presence of statistical variability and reliability. In: IEEE International Electron Devices Meeting (IEDM), Washington, D.C., USA, 9-11 Dec 2013, pp. 818-821.

Cheng, B., Wang, X., Brown, A.R., Kuang, J.B., Reid, D., Millar, C., Nassif, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2013) SRAM device and cell co-design considerations in a 14nm SOI FinFET technology. In: 2013 IEEE International Symposium on Circuits and Systems (ISCAS), Beijing, China, 19-23 May 2013, pp. 2339-2342. (doi: 10.1109/ISCAS.2013.6572347)

Georgiev, V. P. ORCID: https://orcid.org/0000-0001-6473-2508, Markov, S., Vilà-Nadal, Laia ORCID: https://orcid.org/0000-0002-7718-7227, Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 and Cronin, L. ORCID: https://orcid.org/0000-0001-8035-5757 (2013) Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular Limit. In: 16th International Workshop on Computational Electronics, Nara, Japan, 4-7 June 2013, ISBN 9783901578267

Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Markov, Stanislav, Vila-Nadal, Laia ORCID: https://orcid.org/0000-0002-7718-7227, Busche, Cristoph, Cronin, Leroy ORCID: https://orcid.org/0000-0001-8035-5757 and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2013) Multi-scale computational framework for the evaluation of variability in the programing window of a flash cell with molecular storage. In: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Bucharest, Romania, 16-20 Sep 2013, pp. 230-233. (doi: 10.1109/ESSDERC.2013.6818861)

Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Towie, Ewan A. and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2013) Interaction Between Precisely Placed Dopants and Interface Roughness in Silicon Nanowire Transistors: Full 3-D NEGF Simulation Study. In: 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2013), Glasgow, Scotland, 3-5 Sep 2013, pp. 416-419. ISBN 9781467357333 (doi: 10.1109/SISPAD.2013.6650663)

Wang, X., Brown, A.R., Cheng, B. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2013) Drain bias impact on statistical variability and reliability in 20 nm bulk CMOS technology. In: 14th International Conference on Ultimate Integration on Silicon (ULIS), Warwick, UK, 19-21 March 2013. IEEE, pp. 65-68. ISBN 978-1-4673-4800-3 (doi: 10.1109/ULIS.2013.6523492)

Wang, X., Cheng, B., Brown, A.R., Millar, C., Alexander, C., Reid, D., Kuang, J.B., Nassif, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2013) Unified compact modelling strategies for process and statistical variability in 14-nm node DG FinFETs. In: 18th International Conference on Simulation of Semiconductor Processes and Devices: SISPAD 2013, Glasgow, UK, 3-5 Sep 2013, pp. 139-142.

2012

Bukhori, M.F., Kamsani, N.A., Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 and Nayan, N.A. (2012) Accurate capturing of the statistical aspect of NBTI/PBTI variability into statistical compact models. Microelectronics Journal, 43(11), pp. 793-801. (doi: 10.1016/j.mejo.2012.07.004)

Simpson, R.N., Bordas, S.P.A., Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 and Brown, A. (2012) Enriched residual free bubbles for semiconductor device simulation. Computational Mechanics, 50(1), pp. 119-133. (doi: 10.1007/s00466-011-0658-6)

Wang, X., Roy, G., Saxod, O., Bajolet, A., Juge, A. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2012) Simulation study of dominant statistical variability sources in 32-nm high-k/metal gate CMOS. IEEE Electron Device Letters, 33(5), pp. 643-645. (doi: 10.1109/LED.2012.2188268)

Cheng, B., Wang, X., Brown, A.R., Millar, C. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2012) Statistical TCAD based PDK development for a FinFET technology at 14nm technology node. In: SISPAD 2012, Denver, CO, USA, 5-7 Sep 2012, pp. 113-116. ISBN 9780615717562

Cheng, Binjie, Brown, Andrew R., Wang, Xingsheng and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2012) Statistical variability study of a 10nm gate length SOI FinFET device. In: IEEE: Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 10-11 Jun 2012, pp. 1-2. ISBN 9781467309967 (doi: 10.1109/SNW.2012.6243343)

Markov, S., Cheng, B. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2012) Statistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions. IEEE Electron Device Letters, 33(3), pp. 315-317. (doi: 10.1109/LED.2011.2179114)

Martinez, A., Aldegunde, M., Brown, A., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2012) NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants. Solid-State Electronics, 71, pp. 101-105. (doi: 10.1016/j.sse.2011.10.028)

Moore, I., Millar, C., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2012) FET based nano-pore sensing: a 3D simulation study. Journal of Computational Electronics, 11(3), pp. 266-271. (doi: 10.1007/s10825-012-0405-z)

Riddet, C., Watling, J., Chan, K., Parker, E.H.C., Whall, T.E., Leadley, D.R. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2012) Hole mobility in germanium as a function of substrate and channel orientation, strain, doping, and temperature. IEEE Transactions on Electron Devices, 59(7), pp. 1878-1884. (doi: 10.1109/TED.2012.2194498)

Towie, E., Liao, S.-Y., Riddet, C. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2012) InGaAs implant-free quantum-well MOSFETs: performance evaluation using 3D Monte Carlo simulation. In: Intel European Research and Innovation Conference, Dublin, Ireland, 3-5 Oct 2012,

Wang, Liping, Brown, Andrew R., Cheng, Binjie and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2012) Simulation of 3D FinFET doping profiles by ion implantation. In: 19th International Conference on Ion Implantation Technology, Valladolid, Spain, 25-29 June 2012, pp. 217-220. (doi: 10.1063/1.4766527)

Wang, X., Brown, A., Cheng, B. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2012) RTS amplitude distribution in 20nm SOI finFETs subject to statistical variability. In: SISPAD: International Conference on Semiconductor Process and Device Simulations, Denver, CO, USA, 5-7 Sep 2012, pp. 296-299.

Wang, X., Brown, A., Cheng, B. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2012) Statistical distribution of RTS amplitudes in 20nm SOI FinFETs. In: Silicon Nanoelectronics Workshop (SNW 2012), Honolulu, HI, USA, 10-11 Jun 2012, (doi: 10.1109/SNW.2012.6243347)

Wang, X., Cheng, B., Brown, A.R., Miller, C. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2012) Statistical variability in 14-nm node SOI FinFETs and its impact on corresponding 6T-SRAM cell design. In: ESSDERC2012: European Solid-State Device Research Conference 2012, Bordeaux, France, 17-21 Sep 2012, pp. 113-116. (doi: 10.1109/ESSDERC.2012.6343346)

Watling, J.R., Riddet, C. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2012) Accurate and efficient modelling of inelastic hole-acoustic phonon scattering in Monte Carlo simulations. In: 15th International Workshop on Computational Electronics (IWCE), Madison, WI, USA, 22-25 May 2012, pp. 1-4. (doi: 10.1109/IWCE.2012.6242866)

2011

Roy, Gareth, Ghetti, Andrea, Benvenuti, Augusto, Erlebach, Axel and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2011) Comparative simulation study of the different sources of statistical variability in contemporary floating-gate nonvolatile memory. IEEE Transactions on Electron Devices, 58(12), pp. 4155-4163. (doi: 10.1109/TED.2011.2167511)

Aldegunde, M., Martinez, A. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2011) Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors. Journal of Applied Physics, 110(9), 094518. (doi: 10.1063/1.3658856)

Towie, E., Chan, K.-H., Benbakhti, B., Riddet, C. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2011) Statistical variability in implant-free quantum-well MOSFETs with InGaAs and Ge: a comparative 3D simulation study. In: Intel European Research and Innovation Conference, Dublin, Ireland, 12-14 Mar 2011,

Amoroso, S.M., Alexander, C.L., Markov, S., Roy, G. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2011) A mobility model correction for 'atomistic' drift-diffusion simulation. In: 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan, 8-10 Sep 2011, pp. 279-282. ISBN 9781612844190 (doi: 10.1109/SISPAD.2011.6035023)

Asenov, Plamen, Adamu-Lema, Fikru, Roy, Scott, Millar, Campbell, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366, Roy, Gareth, Kovac, Urban and Reid, David (2011) The effect of compact modelling strategy on SNM and Read Current variability in Modern SRAM. In: 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan, 8-10 Sep 2011, pp. 283-286. ISBN 9781612844190 (doi: 10.1109/SISPAD.2011.6035024)

Benbakhti, B. et al. (2011) Numerical analysis of the new implant-free quantum-well CMOS: DualLogic approach. Solid-State Electronics, 63(1), pp. 14-18. (doi: 10.1016/j.sse.2011.05.006)

Markov, S., Wang, Xingsheng, Moezi, N. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2011) Drain current collapse in nanoscaled bulk MOSFETs due to random dopant compensation in the source/drain extensions. IEEE Transactions on Electron Devices, 58(8), pp. 2385-2393. (doi: 10.1109/TED.2011.2152845)

Martinez, A., Aldegunde, M., Seoane, N., Brown, A.R., Barker, J.R. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2011) Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors. IEEE Transactions on Electron Devices, 58(8), pp. 2209-2217. (doi: 10.1109/TED.2011.2157929)

Wang, Xingsheng, Brown, A.R., Idris, N., Markov, S., Roy, G. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2011) Statistical threshold-voltage variability in scaled decananometer bulk HKMG MOSFETs: a full-scale 3-D simulation scaling study. IEEE Transactions on Electron Devices, 58(8), pp. 2293-2301. (doi: 10.1109/TED.2011.2149531)

Reid, D., Millar, C., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2011) Statistical enhancement of the evaluation of combined RDD- and LER-induced V_T variability: lessons from 10⁵ sample simulations. IEEE Transactions on Electron Devices, 58(8), 2257 -2265. (doi: 10.1109/TED.2011.2147317)

Cheng, Binjie, Brown, A.R. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2011) Impact of NBTI/PBTI on SRAM stability degradation. IEEE Electron Device Letters, 32(6), pp. 740-742. (doi: 10.1109/LED.2011.2136316)

Garcia-Loureiro, A.J., Seoane, N., Aldegunde, M., Valin, R., Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366, Martinez, A. and Kalna, K. (2011) Implementation of the density gradient quantum corrections for 3-D simulations of multigate nanoscaled transistors. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 30(6), pp. 841-851. (doi: 10.1109/TCAD.2011.2107990)

Chan, K.H., Benbakhti, B., Riddet, C., Watling, J. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2011) Simulation study of the 20nm gate-length implant-free quantum well p-MOSFET. Microelectronic Engineering, 88(4), pp. 362-365. (doi: 10.1016/j.mee.2010.09.025)

Wang, Xingsheng, Roy, S., Brown, A.R. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2011) Impact of STI on statistical variability and reliability of decananometer MOSFETs. IEEE Electron Device Letters, 32(4), pp. 479-481. (doi: 10.1109/LED.2011.2108256)

Benbakhti, B., Kalna, K., Chan, K.H., Towie, E., Hellings, G., Eneman, G., De Meyer, K., Meuris, M. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2011) Design and analysis of the In_0.53Ga_0.47As implant-free quantum-well device structure. Microelectronic Engineering, 88(4), pp. 358-361. (doi: 10.1016/j.mee.2010.11.019)

Watling, J.R., Riddet, C., Chan, K.H. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2011) Simulation of hole-mobility in doped relaxed and strained Ge. Microelectronic Engineering, 88(4), pp. 462-464. (doi: 10.1016/j.mee.2010.11.017)

Riddet, C., Alexander, C., Brown, A., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2011) Simulation of "ab initio" quantum confinement scattering in UTB MOSFETs using three-dimensional ensemble Monte Carlo. IEEE Transactions on Electron Devices, 58(3), pp. 600-608. (doi: 10.1109/TED.2010.2095422)

Aymerich, N. et al. (2011) New reliability mechanisms in memory design for sub-22nm technologies. In: IEEE 17th International On-Line Testing Symposium (IOLTS), Athens, Greece, 13-15 Jul 2011, pp. 111-114. ISBN 9781457710537 (doi: 10.1109/IOLTS.2011.5993820)

Markov, S., Idris, N.M. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2011) Statistical variability in n-channel UTB-FD-SOI MOSFETs under the influence of RDF, LER, MGG and PBTI. In: 2011 IEEE International SOI Conference, Tempe, AZ, 3-6 Oct 2011, pp. 1-2. (doi: 10.1109/SOI.2011.6081680)

Wang, X., Brown, A.R., Cheng, B. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2011) Statistical variability and reliability in nanoscale FinFETs. In: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA, 5-7 Dec 2011, 5.4.1-5.4.4. (doi: 10.1109/IEDM.2011.6131494)

2010

Kovac, Urban, Alexander, Craig, Roy, Gareth, Cheng, Binjie and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Compact Model Extraction from Quantum Corrected Statistical Monte Carlo Simulation of Random Dopant Induced Drain Current Variability. In: 8th International Conference on Advanced Semiconductor Devices and Microsystems, 25-27 Oct 2010, pp. 317-320. ISBN 9781424485758 (doi: 10.1109/ASDAM.2010.5666361)

Markov, S., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Direct tunnelling gate leakage variability in nano-CMOS transistors. IEEE Transactions on Electron Devices, 57(11), pp. 3106-3114. (doi: 10.1109/TED.2010.2075932)

Reid, D., Millar, C., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Understanding LER-induced MOSFET VT variability - part I: three-dimensional simulation of large statistical samples. IEEE Transactions on Electron Devices, 57(11), pp. 2801-2807. (doi: 10.1109/TED.2010.2067731)

Reid, D., Millar, C., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Understanding LER-induced MOSFET VT variability - part II: reconstructing the distribution. IEEE Transactions on Electron Devices, 57(11), pp. 2808-2813. (doi: 10.1109/TED.2010.2067732)

Kovac, U., Alexander, C., Roy, G., Riddet, C., Cheng, B.J. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Hierarchical Simulation of Statistical Variability: From 3-D MC With "ab initio" Ionized Impurity Scattering to Statistical Compact Models. IEEE Transactions on Electron Devices, 57(10), pp. 2418-2426. (doi: 10.1109/TED.2010.2062517)

Brown, A.R., Huard, V. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Statistical Simulation of Progressive NBTI Degradation in a 45-nm Technology pMOSFET. IEEE Transactions on Electron Devices, 57(9), pp. 2320-2323. (doi: 10.1109/TED.2010.2052694)

Brown, A., Idris, N., Watling, J. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Impact of metal gate granularity on threshold voltage variability: a full-scale 3D statistical simulation study. IEEE Electron Device Letters, 31(11), pp. 1199-1201. (doi: 10.1109/LED.2010.2069080)

Martinez, A., Seoane, N., Brown, A.R., Barker, J.R. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Variability in Si nanowire MOSFETs due to the combined effect of interface roughness and random dopants: a fully three-dimensional NEGF simulation study. IEEE Transactions on Electron Devices, 57(7), pp. 1626-1635. (doi: 10.1109/TED.2010.2048405)

Cheng, B., Brown, A.R., Roy, S. and Asenov, A, ORCID: https://orcid.org/0000-0002-9567-6366 (2010) PBTI/NBTI-related variability in TB-SOI and DG MOSFETs. IEEE Electron Device Letters, 31(5), pp. 408-410. (doi: 10.1109/LED.2010.2043812)

Bukhori, M.F., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Simulation of statistical aspects of charge trapping and related degradation in bulk MOSFETs in the presence of random discrete dopants. IEEE Transactions on Electron Devices, 57(4), pp. 795-803. (doi: 10.1109/TED.2010.2041859)

Benbakhti, B., Ayubi-Moak, J.S., Kalna, K., Lin, D., Hellings, G., Brammertz, G., De Meyer, K., Thayne, I.G. ORCID: https://orcid.org/0000-0002-9197-5393 and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures. Microelectronics Reliability, 50(3), pp. 360-364. (doi: 10.1016/j.microrel.2009.11.017)

Bindu, B., Cheng, B., Roy, G., Wang, X., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Parameter set and data sampling strategy for accurate yet efficient statistical MOSFET compact model extraction. Solid-State Electronics, 54(3), pp. 307-315. (doi: 10.1016/j.sse.2009.09.028)

Aldegunde, M., Martinez, A. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Impact of scattering on the performance of a Si GAA Nanowire FET: from diffusive to ballistic regime. In: 14th International Workshop on Computational Electronics (IWCE), Pisa, Italy, 27-29 Oct 2010,

Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Advanced Monte Carlo Techniques in the Simulation of CMOS Devices and Circuits. In: Numerical Methods and Applications 7th International Conference, Borovets, Bulgaria, 20-24 Aug 2010,

Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Statistical nano CMOS variability and its impact on SRAM. In: Singhee, A. and Rutenbar, R.A. (eds.) Extreme Statistics in Nanoscale Memory Design. Springer, pp. 17-50. ISBN 9781441966056 (doi: 10.1007/978-1-4419-6606-3_3)

Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 and Cheng, B. (2010) Modeling and Simulation of Statistical Variability in Nanometer CMOS Technologies. In: 19th Workshop on Advances in Analog Circuit Design, Graz University of Technology,

Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366, Cheng, B., Dideban, D., Kovac, U., Moezi, N., Millar, C., Roy, G., Brown, A. and Roy, S. (2010) Modeling and simulation of transistor and circuit variability and Reliability. In: Custom Integrated Circuit Conference (CICC), San Jose, CA, USA, 19-22 September 2010, pp. 1-8. (doi: 10.1109/CICC.2010.5617627)

Asenov, P., Kamsani, N.A., Reid, D., Millar, C., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Combining Process and Statistical Variability in the Evaluation of the Effectiveness of Corners in Digital Circuit Parametric Yield Analysis. In: ESSDERC 2010, Sevilla, 13-17 September,

Asenov, P., Reid, D., Millar, C., Roy, S., Liu, Z., Furber, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Generic Aspects of Digital Circuit Behaviour In the Presence of Statistical Variability. In: VARI 2010,

Benbakhti, B. et al. (2010) Performance analysis of the new implant-free quantum-well CMOS : DualLogic approach. Solid State Electronics Journal, (Unpublished)

Benbakhti, B., Kalna, K., Chan, K.H., Hellings, G., Eneman, G., De Meyer, K., Meuris, M. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Design and Analysis of a New In53Ga47As Implant-Free Quantum-Well Device Structure. In: European Materials Research Society (EMRS), Spring Meeting, Strasbourg,

Benbakhti, B., Kalna, K., Wang, X., Cheng, B., Hellings, G., Eneman, G., De Meyer, K., Meuris, M. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Impact of Raised Source/Drain in the In53Ga47As Channel Implant-Free Quantum-Well Transistor. In: 11th International Conference on Ultimate Integration Silicon (ULIS), Glasgow, UK, 2010, p. 129.

Benbakhti, B., Towie, E., Kalna, K., Hellings, G., Eneman, G., De Meyer, K., Meuris, M. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Monte Carlo Analysis of In_0.53Ga_0.47As implant-free Qqantum-well device performance. In: 2010 Silicon Nanoelectronics Workshop, Hilton Hawaiian Village, Honolulu, Hawaii, 13-14 June 2010,

Chan, K.H., Riddet, C., Benbakhti, B., Watling, J. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Simulation and Optimization of Implant-Free Quantum Well Germanium p-MOSFET Design. In: European Materials Research Society (EMRS), Spring Meeting, Strasbourg,

Cheng, B., Dideban, D., Moezi, N., Millar, C., Roy, G., Wang, X., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Capturing intrinsic parameter fluctuations using the PSP compact model. In: Proceedings of the Conference on Design, Automation and Test in Europe (DATE 2010), Dresden, Germany, 8-12 March 2010, pp. 650-653.

Cheng, B., Moezi, N., Dideban, D., Millar, C., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Impact of Statistical Parameter set Selection on Accuracy of Statistical Compact Modelling. In: MOS-AK Workshop, Sapienza University, Rome, Italy, 8-9 April 2010,

Cheng, B.J., Dideban, D., Moezi, N., Millar, C., Roy, G., Wang, X., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Statistical-variability compact-modeling strategies for BSIM4 and PSP. IEEE Design and Test of Computers, 27(2), pp. 26-35. (doi: 10.1109/MDT.2010.53)

Dideban, D., Cheng, B., Moezi, N., Kamsani, N.A., Millar, C., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Impact of input slew rate on statistical timing and power dissipation variability in nanoCMOS. In: 11th International Conference on Ultimate Integration on Silicon, Glasgow, Scotland, 17-19 Mar 2010,

Dideban, D., Cheng, B., Moezi, N., Wang, X. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Evaluation of 35nm MOSFET capacitance components in PSP compact model. In: 18th Iranian Conference on Electrical Engineering (ICEE), 2010, Isfahan, Iran, 11-13 May 2010, (doi: 10.1109/IRANIANCEE.2010.5507045)

Garcia-Loureiro, A., Aldegunde, M., Seoane, N., Kalna, K. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Impact of Random Dopant Fluctuations on a Tri-Gate MOSFET. In: 11th International Conference on Ultimate Integration on Silicon, 18-19 March 2010, p. 77.

Idris, N.M., Brown, A., Watling, J. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Simulation Study of Workfunction Variability in MOSFETs with Polycrystalline Metal Gates. In: 11th International Conference on Ultimate Integration Silicon (ULIS), Glasgow, UK,

Kamsani, N.A., Cheng, B., Millar, C., Moezi, N., Wang, X., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Impact of slew rate definition on the accuracy of nanoCMOS inverter timing simulations. In: 11th International Conference on Ultimate Integration on Silicon, Glasgow, Scotland, 17-19 Mar 2010, p. 53.

Kovac, U., Alexander, C. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Statistical Estimation of Electrostatic and Transport Contributions to device Parameter Variation. In: 14th International Workshop on Computational Electronics, 27-29 October 2010,

Kovac, U., Dideban, D., Cheng, B., Moezi, N., Roy, G. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) A novel approach to the statistical generation of non-normal distributed PSP compact model parameters using a nonlinear power method. In: 15th International Conference on Simulation of Semiconductor Preocesses and Devices (SISPAD), Bologna, Italy, 6-8 Sep 2010,

Markov, S., Shushko, P., Fiegna, C., Sangiorgi, E., Shluger, A. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) From ab initio properties of the Si-Si0₂ interface, to electrical characteristics of metal-oxide-semiconductor devices. Journal of Physics: Conference Series, 242(1), (doi: 10.1088/1742-6596/242/1/012010)

Martinez, A,, Seoane, N., Brown, A. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) A detailed 3D-NEGF simulation study of tunneling in a n-Si nanowire MOSFETs. In: 2010 Silicon Nanoelectronics Workshop, Honolulu, Hawaii, 13-14 June 2010,

Martinez, A., Aldegunde, M. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Channel length dependence of discrete dopant effects in narrow si nanowire transistors: A full 3D NEGF study. In: 14th International Workshop on Computational Electronics (IWCE), Pisa, Italy, 27-29 Oct 2010,

Martinez, A., Barker, J., Seoane, N., Brown, A. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Dopants and roughness induced resonances in thin Si nanowire transistors: A self-consistent NEGF-poisson study. Journal of Physics: Conference Series, 220(1), 012009. (doi: 10.1088/1742-6596/220/1/012009)

Martinez, A., Benbakhti, B. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Effect of the channel thickness on the performance of the implant-free quantum-well MOSFET. In: 14th International Workshop on Computational Electronics, Pisa, Italy, 27-29 Oct 2010,

Martinez, A., Brown, A. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Full-band NEGF simulations of surface roughness in Si nanowires. Journal of Physics: Conference Series, 242(1), 012016. (doi: 10.1088/1742-6596/242/1/012016)

Moore, I., Millar, C., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Brownian noise in FET based nano-pore sensing a 3D simulation study. In: 14th International Workshop on Computational Electronics, Pisa, Italy, 27-29 Oct 2010,

Moore, I., Millar, C., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Integrating drift diffusion and Brownian simulations for sensory applications. In: 11th International Conference on Ultimate Integration on Silicon, Glasgow, UK, 17-19 Mar 2010, pp. 85-88.

Riddet, C., Watling, J., Chan, K. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Monte Carlo simulation study of the impact of strain and substrate orientation on hole mobility in Germanium. Journal of Physics: Conference Series, 242(1), 012017. (doi: 10.1088/1742-6596/242/1/012017)

Riddet, C., Watling, J., Chan, K. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Monte carlo simulation study of the impact of strain and substrate orientation on hole mobility on Geranium. In: 14th International Workshop on Computational Electronics (IWCE), Pisa, Italy, 27-29 Oct 2010, pp. 239-242.

Riddet, C., Watling, J., Chan, K.H., Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366, De Jaeger, B., Mitard, J. and Meuris, M. (2010) Monte Carlo Simulation Study of Hole Mobility in Germanium MOS Inversion Layers. In: 14 International Workshop on Computational Electronics, Pisa, Italy, 26-29 October 2010, pp. 239-242. (doi: 10.1109/IWCE.2010.5677972)

Sinnott, R.O., Stewart, G., Asenov, A., Millar, C., Reid, D., Roy, G., Roy, S., Davenhall, C., Harbulot, B. and Jones, M. (2010) E-infrastructure support for nanoCMOS device and circuit simulations. In: Hamza, M.H. (ed.) Proceedings of the Conference on Parallel and Distributed Computing and Networks, Innsbruck, Austria, 16-18th February 2010. ACTA Press: Anaheim, USA. ISBN 9780889868342

Tang, T.B., Murray, A.F., Cheng, B. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Statistical NBTI-effect prediction for ULSI circuits. In: IEEE International Symposium on Circuits and Systems, Paris, France, 30 May - 2 Jun 2010, pp. 2494-2497. (doi: 10.1109/ISCAS.2010.5537132)

Watling, J., Riddet, C., Chan, K. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Simulation of hole-mobility in doped relaxed and strained Ge layers. In: European Materials Research Society (EMRS), Spring Meeting, Strasbourg, 2010,

Watling, J., Riddet, C., Chan, K. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2010) Simulation of hole-mobility in doped relaxed and strained Ge layers. Journal of Applied Physics, 108(9), 093715.

2009

Davenhall, C., Harbulot, B., Jones, M., Stewart, G., Sinnott, R.O., Asenov, A., Millar, C., Roy, G. and Reid, D. (2009) Data management of nanometre­ scale CMOS device simulations. In: 5th International Digital Curation Conference, London, UK, 2-4 Dec 2009,

Palestri, P. et al. (2009) A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs. Solid-State Electronics, 53(12), pp. 1293-1302. (doi: 10.1016/j.sse.2009.09.019)

Reid, D., Millar, C., Roy, G., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2009) Analysis of threshold voltage distribution due to random dopants: a 100 000-sample 3-D simulation study. IEEE Transactions on Electron Devices, 56(10), pp. 2255-2263. (doi: 10.1109/TED.2009.2027973)

Ayubi-Moak, J.S., Benbakhti, B., Kalna, K., Paterson, G.W. ORCID: https://orcid.org/0000-0002-4680-048X, Hill, R., Passlack, M., Thayne, I.G. ORCID: https://orcid.org/0000-0002-9197-5393 and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2009) Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs. Microelectronic Engineering, 86(7-9), pp. 1564-1567. (doi: 10.1016/j.mee.2009.03.024)

Sinnott, R.O., Stewart, G., Asenov, A., Millar, C., Reid, D., Roy, G., Roy, S., Davenhall, C., Harbulot, B. and Jones, M. (2009) Multi-level simulations to support nanoCMOS electronics research. In: 2009 ASME Design Engineering Technical Conferences and Computers and Information in Engineering Conference DETC2009, August 30-September 2, 2009, San Diego, California, USA. American Society of Mechanical Engineers: New York, USA. ISBN 9780791838563

Cheng, B., Roy, S., Brown, A.R., Millar, C. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2009) Evaluation of statistical variability in 32 and 22 nm technology generation LSTP MOSFETs. Solid-State Electronics, 53(7), pp. 767-772. (doi: 10.1016/j.sse.2009.03.008)

Reid, D., Millar, C., Roy, S., Roy, G., Sinnott, R.O., Stewart, G., Stewart, G. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2009) Enabling cutting-edge semiconductor simulation through grid technology. Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, 367(1897), pp. 2573-2584. (doi: 10.1098/rsta.2009.0031)

Hill, R.J.W. et al. (2009) Deep sub-micron and self-aligned flatband III–V MOSFETs. In: Device Research Conference, 2009 (DRC 2009), University Park, PA, USA, 22-24 Jun 2009, pp. 251-252. (doi: 10.1109/DRC.2009.5354900)

Seoane, N., Garcia-Loureiro, A., Aldegunde, M., Kalna, K. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2009) Impact of intrinsic parameter fluctuations on the performance of In0.75Ga0.25As implant free MOSFETs. Semiconductor Science and Technology, 24(5), (doi: 10.1088/0268-1242/24/5/055011)

Alexander, C., Kovac, U., Roy, G., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2009) A unified density gradient approach to 'ab-initio' ionized impurity scattering in 3D MC simulations of nano-CMOS variability. In: Ultimate Integration of Silicon: ULIS 2009, Aachen, Germany, 18-20 Mar 2009, pp. 43-46. (doi: 10.1109/ULIS.2009.4897535)

Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366, Brown, A., Roy, G., Cheng, B., Alexander, C., Riddet, C., Kovac, U., Martinez, A., Seoane, N. and Roy, S. (2009) Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green's function techniques. Journal of Computational Electronics, 8(3-4), pp. 349-373. (doi: 10.1007/s10825-009-0292-0)

Ayubi-Moak, J.S., Kalna, K. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2009) High-performance in0.75Ga0.25As implant-free n-type MOSFETs for low power applications. In: Electron Devices, 2009. CDE 2009. Spanish Conference on. IEEE, pp. 92-95. ISBN 9781424428380 (doi: 10.1109/SCED.2009.4800438)

Benbakhti, B., Ayubi-Moak, J.S., Kalna, K. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2009) Effect of Interface State Trap Density on the Performance of Scaled Surface Channel In0.3Ga0.7As MOSFETs. Journal of Physics: Conference Series, 193, (doi: 10.1088/1742-6596/193/1/012122)

Brown, A.R., Martinez, A., Seoane, N and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2009) Comparison of Density Gradient and NEGF for 3D Simulation of a Nanowire MOSFET. Proceedings of the 2009 Spanish Conference on Electron Devices, pp. 140-143.

Bukhori, M.F., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2009) Simulation of statistical aspects of reliability in nano CMOS. In: IEEE International Integrated Reliability Workshop (IRW '09), S. Lake Tahoe, CA., U.S.A., 18-22 Oct 2009, pp. 82-85. ISBN 9781424439218 (doi: 10.1109/IRWS.2009.5383028)

Cheng, B., Moezi, N., Dideban, D., Roy, G., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2009) Benchmarking the Accuracy of PCA Generated Statistical Compact Model Parameters Against Physical Device Simulation and Directly Extracted Statistical Parameters. In: Simulation of Semiconductor Processes and Devices, 2009, San Diego, CA, 9-11th September, 2009, pp. 1-4. ISBN 1946-1569 (doi: 10.1109/SISPAD.2009.5290230)

Kamsani, N.A., Cheng, B.J., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2009) Impact of Random Dopant Induced Statistical Variability on Inverter Switching Trajectories and Timing Variability. In: ISCAS: IEEE International Symposium on Circuits and Systems, 2009, pp. 577-580.

Martinez, A., Brown, A., Seoane, N. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2009) Investigation of resistance in n-doped Si wires using NEGF formalism. In: Spanish Conference on Electron Devices (CDE 2009), Santiago de Compostela, Spain, 11-13 Feb 2009, pp. 416-419. ISBN 9781424428380 (doi: 10.1109/SCED.2009.4800522)

Martinez, A., Brown, A.R., Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 and Seoane, N. (2009) A comparison between a fully-3D real-space versus coupled mode-space NEGF in the study of variability in gate-all-around Si nanowire MOSFET. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2009), San Diego, California, 9-11 September 2009, pp. 194-197.

Martinez, A., Brown, A.R., Seoane, N. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2009) Perturbative vs non-perturbative impurity scattering in a narrow Si nanowire GAA transistor: A NEGF study. Journal of Physics: Conference Series, 193(1), (doi: 10.1088/1742-6596/193/1/012047)

Martinez, A., Kalna, K. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2009) Impurity potential induced resonances in Doped Si nanowire: A NEGF approach. In: 9th IEEE Conference on Nanotechnology, 2009. IEEE-NANO 2009, Genoa, Italy, 26-30 Jul 2009, pp. 551-554. ISBN 9781424448326

Martinez, A., Kalna, K., Sushko, P.V., Shluger, A.L., Barker, J.R. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2009) Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study. IEEE Transactions on Nanotechnology, 8(2), pp. 159-166. (doi: 10.1109/TNANO.2008.917776)

Martinez, A., Seoane, N., Brown, A.R., Barker, J.R. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2009) 3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor. IEEE Transactions on Nanotechnology, 8(5), pp. 603-610. (doi: 10.1109/TNANO.2009.2020980)

Reid, D., Millar, C., Roy, G., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2009) Efficient simulation of 6σ VT distribution due to random descrete dopants. In: 10th International Conference on Ultimate Integration of Silicon, 2009. ULIS 2009., Aachen, Germany, 18-20 Mar 2009, pp. 23-26. (doi: 10.1109/ULIS.2009.4897530)

Reid, D., Millar, C., Roy, G., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2009) Statistical enhancement of combined simulations of RDD and LER variability: what can simulation of a 10⁵ sample teach us? In: Proceedings of the 2009 IEEE International Electron Devices Meeting (IEDM), Baltimore, USA, 7-9 December 2009. IEEE Computer Society, pp. 657-660. ISBN 9781424456390 (doi: 10.1109/IEDM.2009.5424241)

Reid, D., Millar, C., Roy, G., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2009) Understanding LER-induced statistical variability: a 35,000 sample 3D simulation study. In: European Solid State Device Research Conference, 2009. ESSDERC '09, Athens, Greece, 14-18 Sep 2009, pp. 423-426. (doi: 10.1109/ESSDERC.2009.5331515)

Seoane, N., Martinez, A., Brown, A. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2009) Study of surface roughness in extremely small Si nanowire MOSFETs using fully-3D NEGFs. In: Spanish Conference on Electron Devices, 2009. CDE 2009., Santiago de Compostela, Spain, 11-13 Feb 2009, pp. 180-183. ISBN 9781424428380 (doi: 10.1109/SCED.2009.4800460)

Seoane, N., Martinez, A., Brown, A.R., Barker, J.R. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2009) Current variability in Si nanowire MOSFETs due to random dopants in the source/drain regions: a fully 3-D NEGF simulation study. IEEE Transactions on Electron Devices, 56(7), pp. 1388-1395. (doi: 10.1109/TED.2009.2021357)

Thayne, I.G. et al. (2009) Review of current status of III-V MOSFETs. ECS Transactions, 19(5), pp. 275-286. (doi: 10.1149/1.3119552)

Twaddle, F., Cumming, D., Roy, S., Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 and Drysdale, T. (2009) Variability of short-range interconnects. In: 13th International Workshop on Computational Electronics, Beijing, China, 27-29 May 2009,

Twaddle, F.J., Cumming, D.R.S., Roy, S., Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 and Drysdale, T.D. (2009) RC variability of short-range interconnects. In: IWCE 2009: 13th International Workshop on Computational Electronics, Beijing, China, 27-29 May 2009, pp. 121-124. (doi: 10.1109/IWCE.2009.5091143)

Wang, X.S., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2009) Impact of strain on the performance of high-k/metal replacement gate MOSFETs. In: 10th International Conference on Ultimate Integration of Silicon, Aachen, Germany, 18-20 March 2009, pp. 289-292. (doi: 10.1109/ULIS.2009.4897592)

2008

Alexander, Craig, Roy, Gareth and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 (2008) Random-dopant-induced drain current variation in Nano-MOSFETs: a three-dimensional self-consistent Monte Carlo simulation study using "ab initio" ionized impurity scattering. IEEE Transactions on Electron Devices, 55(11), pp. 3251-3258. (doi: 10.1109/TED.2008.2004647)

Hill, R., Moran, D. ORCID: https://orcid.org/0000-0003-4085-7650, Li, X. ORCID: https://orcid.org/0000-0002-4220-4605, Macintyre, D.S., Thoms, S. ORCID: https://orcid.org/0000-0001-7820-6023, Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366, Droopad, R., Passlack, M. and Thayne, I. ORCID: https://orcid.org/0000-0002-9197-5393 (2008) III-V MOSFETs: a possible solution for sub-22 nm CMOS nFETs. In: 17th European Heterostructure Technology Workshop, Venice, Italy, Nov 2008,

Thayne, I. G. ORCID: https://orcid.org/0000-0002-9197-5393, Hill, R. J. W., Moran, D.A.J., Kalna, K., Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 and Passlack, M. (2008) Comments on "High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm". IEEE Electron Device Letters, 29(10), pp. 1085-1086. (doi: 10.1109/LED.2008.2002752)

Sinnott, R.O. et al. (2008) Scalable, security-oriented solutions for nanoCMOS electronics. In: UK e-Science All Hands Meeting, Edinburgh, UK, 8-11 Sept 2008,

Kalna, K., Seoane, N., Garcia-Loureiro, A. J., Thayne, I. G. ORCID: https://orcid.org/0000-0002-9197-5393 and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2008) Benchmarking of scaled InGaAs implant-free NanoMOSFETs. IEEE Transactions on Electron Devices, 55(9), pp. 2297-2306. (doi: 10.1109/TED.2008.927658)

Riddet, C., Brown, A. R., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2008) Boundary conditions for Density Gradient corrections in 3D Monte Carlo simulations. Journal of Computational Electronics, 7(3), pp. 231-235. (doi: 10.1007/s10825-008-0222-6)

Harbulot, B., Berry, D., Davenhall, C., Jones, M., Millar, C., Roy, G., Sinnott, R.O., Stewart, G. and Asenov, A. (2008) A resource-oriented data management architecture for nanoCMOS electronics. In: UK e-Science All Hands Meeting, Edinburgh, UK, 8-11 Sept 2008,

Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366, Cathignol, A., Cheng, B., McKenna, K. P., Brown, A. R., Shluger, A. L., Chanemougame, D., Rochereau, K. and Ghibaudo, G. (2008) Origin of the asymmetry in the magnitude of the statistical variability of n- and p-channel poly-Si gate bulk MOSFETs. IEEE Electron Device Letters, 29(8), pp. 913-915. (doi: 10.1109/LED.2008.2000843)

Sinnott, R.O., Millar, C. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2008) Supercomputing at work in the nanoCMOS electronics domain. ERCIM News, 74, pp. 22-23.

Watling, J. R., Brown, A. R., Ferrari, G., Barker, J. R., Bersuker, G., Zeitzoff, P. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2008) Impact of high-kappa gate stacks on transport and variability in nano-CMOS devices. Journal of Computational and Theoretical Nanoscience, 5(6), pp. 1072-1088.

Hill, R.J.W. et al. (2008) 1 μm gate length, In_0.75Ga_0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737μS/μm. Electronics Letters, 44, pp. 498-500. (doi: 10.1049/el:20080470)

Aldegunde, M., Seoane, N., Garcia-Loureiro, A. J., Sushko, P. V., Shluger, A. L., Gavartin, J. L., Kalna, K, and Asenov, A, ORCID: https://orcid.org/0000-0002-9567-6366 (2008) Atomistic mesh generation for the simulation of nanoscale metal-oxide-semiconductor field-effect transistors. Physical Review E, 77(5), (doi: 10.1103/PhysRevE.77.056702)

Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2008) Impact of the field induced polarization space-charge on the characteristics of AlGaN/GaN HEMT: self-consistent simulation study - Invited. In: 14th IEEE International Symposium on Asynchronous Circuits and Systems ASYNC 2008, Newcastle, UK, 7-11th April, 2008, xv.

Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2008) Statistical device variability and its impact on low power digital circuit design. In: Proceeding FTFC 2008, Louvain La Neuve, Belgium, 27-28 May 2008, pp. 29-34.

Asenov, A. et al. (2008) Advanced simulation of statistical variability and reliability in nano CMOS transistors. In: IEDM 2008. IEEE International Electron Devices Meeting, 2008, San Francisco, CA, 15-17 Dec 2008, p. 421. ISBN 9781424423774 (doi: 10.1109/IEDM.2008.4796712)

Asenov, A. et al. (2008) Meeting the design challenges of nano-CMOS electronics, design automation and test in Europe. In: Workshop on Impact of Process Variability on Design and Test, Munich, Germany, 10-14 Mar 2008,

Balaz, D., Kalna, K., Kuball, M., Uren, M. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2008) Impact of the Field Induced Polarization Space-Charge on the Characteristics of AlGaN/GaN HEMT: Self-Consistent Simulation Study. In: International Workshop On Nitride Semiconductors, Montreux, Switzerland, Oct. 6-10, 2008, We7-C4.

Bindu, B., Cheng, B., Roy, G., Wang, X., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2008) An efficient data sampling strategy for statistical parameter extraction of nano-MOSFETs. In: IEEE Workshop on Compact Modeling, Hakone, Japan, 8 Sept 2008,

Brown, A. R. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2008) Capacitance fluctuations in bulk MOSFETs due to random discrete dopants. Journal of Computational Electronics, 7(3), pp. 115-118. (doi: 10.1007/s10825-008-0181-y)

Bukhori, M F, Roy, S and Asenov, A ORCID: https://orcid.org/0000-0002-9567-6366 (2008) Statistical simulation of RTS amplitude distribution in realistic bulk MOSFETs subject to random discreet dopants. In: 9th International Conference on Ultimate Integration of Silicon, 2008. ULIS 2008., Udine, Italy, pp. 171-174. ISBN 978-1-4244-1729-2 (doi: 10.1109/ULIS.2008.4527166)

Bukhori, M. F., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2008) Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants. Microelectronics Reliability, 48(8-9), pp. 1549-1552. (doi: 10.1016/j.microrel.2008.06.029)

Cathignol, A., Cheng, B., Chanemougame, D., Brown, A. R., Rochereau, K., Ghibaudo, G. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2008) Quantitative evaluation of statistical variability sources in a 45-nm-technological node LP N-MOSFET. IEEE Electron Device Letters, 29(6), pp. 609-611. (doi: 10.1109/LED.2008.922978)

Cheng, B., Roy, S., Brown, A., Millar, C. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2008) Evaluation of Intrinsic Parameter Fluctuations on 45, 32 and 22nm Technology Node LP N-MOSFETs. In: ESSDERC 2008: Proceedings of the 38th European Solid-State Device Research Conference. Series: Proceedings of the European Solid-State Device Research Conference. IEEE: New York, pp. 47-50. ISBN 978-1-4244-2363-7 (doi: 10.1109/ESSDERC.2008.4681695)

Cheng, B., Roy, S., Brown, A.R., Millar, C. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2008) Statistical variations in 32nm thin-body SOI devices and SRAM cells. In: 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. IEEE, pp. 389-392. ISBN 9781424421855 (doi: 10.1109/ICSICT.2008.4734546)

Drysdale, T. D., Brown, A. R., Roy, G., Roy, S. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2008) Capacitance variability of short range interconnects. Journal of Computational Electronics, 7(3), pp. 124-127. (doi: 10.1007/s10825-007-0154-6)

Hill, R.J.W., Moran, D.A.J. ORCID: https://orcid.org/0000-0003-4085-7650, Li, X. ORCID: https://orcid.org/0000-0002-4220-4605, Zhou, H., Macintyre, D.S., Thoms, S. ORCID: https://orcid.org/0000-0001-7820-6023, Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 and Thayne, I.G. ORCID: https://orcid.org/0000-0002-9197-5393 (2008) Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics. In: Proceedings of the IEEE Silicon Nanoelectronics Workshop, 15-16 June 2008, Honolulu, Hawaii. IEEE Computer Society: Piscataway, N.J., USA. ISBN 9781424420711 (doi: 10.1109/SNW.2008.5418447)

Kalna, K. et al. (2008) III-V MOSFETs for digital applications with silicon co-integration. In: 7th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice, Slovakia, 12-16 October 2008, pp. 39-46. ISBN 9781424423255 (doi: 10.1109/ASDAM.2008.4743354)

Kalna, K., Martinez, A., Svizhenko, A., Anantram, M. P., Barker, J. R. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366 (2008) NEGF Simulations of the effect of strain on scaled double gate NanoMOSFETs. Journal of Computational Electronics, 7(3), pp. 288-292. (doi: 10.1007/s10825-008-0212-8)