Dr Edward Wasige (Coordinator)
Edward Wasige leads the High Frequency Electronics (HFE) Group, Division of Electronics and Nanoscale Engineering, School of Engineering, University of Glasgow. He holds a First Class Honours BSc (Eng.) degree in Electrical Engineering from the University of Nairobi (1988, Kenya), an MSc in Microelectronics and Telecommunications from the University of Liverpool (1990, UK), and a PhD (with Distinction) in Electrical Engineering from Kassel University (1999, Germany) for developing a quasi-monolithic integration technology for microwave and millimetre-wave circuits. III-V active devices (GaAs FETs) were embedded in high resistivity Si substrates to realise low cost high performance circuits.
Prior to joining the University of Glasgow in 2002, he held a UNESCO postdoctoral fellowship at The Technion (Israel) where he worked on resonant tunneling diode (RTD) oscillators, experimental modelling of heterojunction bipolar transistors (HBTs) and processing of gallium nitride (GaN) high electron mobility transistors (HEMTs). His current research covers compound semiconductor electronics, with focus on GaN device technologies for power electronics and for microwave electronics, and on indium phosphide (InP) based device and integrated circuit (IC) technologies for microwave, mm-wave and terahertz (THz) electronics.