Monte Carlo Transport
The Glasgow 3D Monte Carlo simulator is a generalised device simulator developed in concert with and now available as a module in the with the Glasgow 'atomistic' device simulator, NESS. It has been designed specifically for the investigation of intrinsic statistical device variability where variation in carrier transport, in addition to electrostatic modulation, is an important consideration. It is complimentary to the drift-diffusion module of NESS, working in the same simulation domain and with the same sources of statistical variability.
The general design of the simulator allows the simulation of electron and hole transport within Silicon, Germanium and III-V materials in combination with all relevant sources of statistical variability in a variety of device structures from conventional bulk through to IFQW and FinFET. Scattering is captured through a combination of traditional bulk scattering rate models and directly via the quantum corrected potential that is most accurate for treating position dependent scattering from random dopants and interface roughness that leads to transport variation between microscopically unique devices.
Related Publications
C. Medina-Bailon, H. Carrillo-Nunez, J. Lee, C. Sampedro, L. Padilla, L. Donetti, V. Georgiev, F. Gamiz and A. Asenov, "Quantum enhancement of a S/D tunneling model in a 2D MS-EMC nanodevice simulator: NEGF comparison and impact of effective mass variation," Micromachines, Vol. 11, No. 2, p. 204, 2020.
C. Medina-Bailon, T. Sadi, C. Sampedro, L. Padillla, L. Donetti, V. Georgiev, A. Asenov and F. Gamiz, "Impact of the trap attributes on the gate leakage mechanisms in a 2D MS-EMC nanodevice simulator." Numerical Methods and Applications. Series: Lecture Notes in Computer Science, p. 273, 2019.
C. Medina-Ballon, T. Sadi, M. Nedjalkov, H. Carrillo-Nunez, J. H. Lee, O. Badami, V. Georgiev, S. Selberherr and A. Asenon, "Mobility of circular and elliptical si nanowire transistors using a multi-subband 1d formalism," IEEE Electron Device Letters, Vol. 40, No. 10, 2019.
T. Sadi, C. Medina-Ballon, M. Nedjalkov, J. Lee, O. Badami, S. Berrada, H. Carrillo-Nunez, V. P. Georgiev, S. Selberherr and A. Asenov, "Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors," Materials, Vol. 12, No. 1, p. 124, 2019.
C. Medina-Bailon, T. Sadi, M. Nedjalkov, J. Lee, S. Berrada, H. Carrillo-Nunez, V. Georgiev, S. Selberherr and A. Asenov, "Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors." 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS): Mar. 2018.
P. Kivisaari, T. Sadi, J. Oksanen and J. Tulkki, "Monte Carlo simulation of hot carrier transport in III-N LEDs," Journal of Computational Electronics, Vol. 14, No. 2, pp. 382–397, 2015.
P. Kivisaari, T. Sadi, J. Li, V. P. Georgiev, J. Oksanen, P. Rinke and J. Tulkki, "Bipolar Monte Carlo Simulation of Hot Carriers In III-N LEDs," in Proc. 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sept. 9-11, 2015, pp. 393–396.
C. Riddet, C. L. Alexander, A. R. Brown, S. Roy and A. Asenov, "Simulation of "Ab Initio" Quantum Confinement Scattering in UTB MOSFETs Using Three-Dimensional Ensemble Monte Carlo," IEEE Transactions on Electron Devices, Vol. 58, No. 3, pp. 600–608, Mar. 2011.
U. Kovac, C. L. Alexander, G. Roy, C. Riddet, B. Cheng and A. Asenov, "Hierarchical Simulation of Statistical Variability: From 3-D MC with ‘ab initio’ Ionized Impurity Scattering to Statistical Compact Models," IEEE Transactions on Electron Devices, 2010.
A. Asenov, A. R. Brown, G. Roy, B. Cheng, C. L. Alexander, C. Riddet, U. Kovac, A. Martinez, N. Seoane and S. Roy, "Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green’s function techniques," Journal of Computational Electronics, Vol. 8, No. 3-4, pp. 349–373, 2009.
P. Palestri, C. L. Alexander, A. Asenov, V. Aubry-Fortuna, G. Baccarani, A. Bournel, M. Braccioli, B. Cheng, P. Dolfus, A. Esposito, D. Esseni, C. Fenouillet-Beranger, C. Fiegna, G. Fiori, A. Ghetti, G. Iannaccone, A. Martinez, B. Majkusiak, S. Monfray, V. Peikert, S. Reggiani, C. Riddet, J. Saint-Martin, E. Sangiorgi, A. Schenk, L. Selmi, L. Silvestri, P. Toniutti and J. Walczak, "A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs," Solid-State Electronics, Vol. 53, No. 12, pp. 1293–1302, Dec. 2009.
C. L. Alexander, G. Roy and A. Asenov, "Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using "ab initio" Ionized Impurity Scattering," IEEE Trans. Electron Devices, Vol. 55, No. 11, pp. 3251–3258, Nov. 2008.
