Dr Fikru Adamu-Lema
- Affiliate (School of Engineering)
Publications
2025
Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Imroze, Fiheon, Adamu-Lema, Fikru, Heidari, Hadi
ORCID: https://orcid.org/0000-0001-8412-8164 and Weides, Martin
ORCID: https://orcid.org/0000-0002-2718-6795
(2025)
Interplay of short-channel and narrow-width effects in FDSOI transistors at cryogenic temperatures.
IEEE Transactions on Electron Devices,
(doi: 10.1109/TED.2025.3572029)
(Early Online Publication)
2024
Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Adamu-Lema, Fikru, Xeni, Nikolas, Rezaei, Ali
ORCID: https://orcid.org/0000-0001-9150-9520, Dixit, Ankit
ORCID: https://orcid.org/0000-0002-6653-6460, Topaloglu, Ismail
ORCID: https://orcid.org/0000-0002-9599-5228, Georgiev, Vihar
ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2024)
Predictive Simulation of Nanosheet Transistors including the Impact of Access Resistance.
In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2024), San Jose, CA, USA, 25-27 Sept 2024,
(Accepted for Publication)
2023
Nagy, Daniel ORCID: https://orcid.org/0000-0003-0854-6596, Rezaei, Ali
ORCID: https://orcid.org/0000-0001-9150-9520, Xeni, Nikolas, Dutta, Tapas
ORCID: https://orcid.org/0000-0003-1917-314X, Adamu-Lema, Fikru, Topaloglu, Ismail
ORCID: https://orcid.org/0000-0002-9599-5228, Georgiev, Vihar P.
ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2023)
Hierarchical simulation of nanosheet field effect transistor: NESS flow.
Solid-State Electronics, 199,
108489.
(doi: 10.1016/j.sse.2022.108489)
2021
Medina-Bailon, Cristina, Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Rezaei, Ali
ORCID: https://orcid.org/0000-0001-9150-9520, Nagy, Daniel
ORCID: https://orcid.org/0000-0003-0854-6596, Adamu-Lema, Fikru, Georgiev, Vihar P.
ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2021)
Simulation and modeling of novel electronic device architectures with NESS (Nano-Electronic Simulation Software): a modular nano TCAD simulation framework.
Micromachines, 12(6),
680.
(doi: 10.3390/mi12060680)
Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Adamu-Lema, Fikru, Nagy, Daniel
ORCID: https://orcid.org/0000-0003-0854-6596, Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366, Nebesnyi, Valerii, Han, Jin-Woo and Widjaja, Yuniarto
(2021)
Equivalent Circuit Macro-Compact Model of the 1T Bipolar SRAM Cell.
In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2021), Dallas, TX, USA, 27-29 Sept 2021,
pp. 285-288.
ISBN 9781665406857
(doi: 10.1109/SISPAD54002.2021.9592536)
Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Medina Bailon, Cristina, Rezaei, Ali
ORCID: https://orcid.org/0000-0001-9150-9520, Nagy, Daniel
ORCID: https://orcid.org/0000-0003-0854-6596, Adamu-Lema, Fikru, Xeni, Nikolas, Abourrig, Yassine, Kumar, Naveen
ORCID: https://orcid.org/0000-0002-4765-1789, Georgiev, Vihar
ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2021)
TCAD Simulation of Novel Semiconductor Devices.
In: International Conference on ASIC (ASICON) 2021, Kunming, China, 26-29 October 2021,
ISBN 9781665438674
(doi: 10.1109/ASICON52560.2021.9620465)
2020
Medina-Bailon, Cristina, Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Adamu-Lema, Fikru, Rezaei, Ali
ORCID: https://orcid.org/0000-0001-9150-9520, Nagy, Daniel
ORCID: https://orcid.org/0000-0003-0854-6596, Georgiev, Vihar P.
ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2020)
Nano-electronic simulation software (NESS): a novel open-source TCAD simulation environment.
Journal of Microelectronic Manufacturing, 3(4),
20030407.
(doi: 10.33079/jomm.20030407)
Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Adamu-Lema, Fikru, Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366, Widjaja, Yuniarto and Nebesnyi, Valerii
(2020)
Dynamic Simulation of Write ‘1’Operation in the Bi-stable 1-Transistor SRAM Cell.
In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sept.-6 Oct. 2020,
pp. 237-240.
ISBN 9784863487635
(doi: 10.23919/SISPAD49475.2020.9241653)
Georgiev, V.P. ORCID: https://orcid.org/0000-0001-6473-2508, Sengupta, A.
ORCID: https://orcid.org/0000-0003-1125-6389, Maciazek, P., Badami, O., Medina-Bailon, C., Dutta, T.
ORCID: https://orcid.org/0000-0003-1917-314X, Adamu-Lema, F. and Asenov, A.
ORCID: https://orcid.org/0000-0002-9567-6366
(2020)
Simulation of Gated GaAs-AlGaAs Resonant Tunneling Diodes for Tunable Terahertz Communication Applications.
In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020,
pp. 241-244.
ISBN 9784863487635
(doi: 10.23919/SISPAD49475.2020.9241677)
Lapham, P., Badami, Ov., Medina-Bailon, C., Adamu-Lema, F., Dutta, T. ORCID: https://orcid.org/0000-0003-1917-314X, Nagy, D.
ORCID: https://orcid.org/0000-0003-0854-6596, Georgiev, V.
ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, A.
ORCID: https://orcid.org/0000-0002-9567-6366
(2020)
A Combined First Principles and Kinetic Monte Carlo study of Polyoxometalate based Molecular Memory Devices.
In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020,
pp. 273-276.
ISBN 9784863487635
(doi: 10.23919/SISPAD49475.2020.9241606)
Medina Bailon, Cristina, Badami, Oves, Carrillo-Nunez, Hamilton, Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Nagy, Daniel
ORCID: https://orcid.org/0000-0003-0854-6596, Adamu-Lema, Fikru, Georgiev, Vihar P.
ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2020)
Enhanced Capabilities of the Nano-Electronic Simulation Software (NESS).
In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020,
pp. 293-296.
ISBN 9781728173542
(doi: 10.23919/SISPAD49475.2020.9241594)
Xeni, Nikolas, Ghannam, Rami ORCID: https://orcid.org/0000-0001-6910-9280, Georgiev, Vihar
ORCID: https://orcid.org/0000-0001-6473-2508, Adamu-Lema, Fikru, Badami, Oves and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2020)
The Use of TCAD Simulations in Semiconductor Devices Teaching.
Transnational Engineering Education Using Technology Workshop (TREET 2020), Glasgow, UK, 31 Jul 2020.
ISBN 9781728188515
(doi: 10.1109/TREET50959.2020.9189752)
Berrada, Salim, Carrillo-Nunez, Hamilton, Lee, Jaehyun, Medina Bailon, Cristina, Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Badami, Oves, Adamu-Lema, Fikru, Thirunavukkarasu, Vasanthan, Georgiev, Vihar
ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2020)
Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform.
Journal of Computational Electronics, 19,
pp. 1031-1046.
(doi: 10.1007/s10825-020-01519-0)
Badami, Oves, Sadi, Toufik, Adamu-Lema, Fikru, Lapham, Paul, Mu, Dejiang, Nagy, Daniel ORCID: https://orcid.org/0000-0003-0854-6596, Georgiev, Vihar
ORCID: https://orcid.org/0000-0001-6473-2508, Ding, Jie and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2020)
A Kinetic Monte Carlo study of retention time in a POM molecule-based flash memory.
IEEE Transactions on Nanotechnology, 19,
pp. 704-710.
(doi: 10.1109/TNANO.2020.3016182)
Adamu-Lema, F., Monzio Compagnoni, C., Badami, O., Georgiev, V. ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, A.
ORCID: https://orcid.org/0000-0002-9567-6366
(2020)
RTN and its intrinsic interaction with statistical variability sources in advanced nano-scale devices: a simulation study.
In: Grasser, Tibor (ed.)
Noise in Nanoscale Semiconductor Devices.
Springer: Cham, pp. 441-466.
ISBN 9783030374990
(doi: 10.1007/978-3-030-37500-3_13)
2019
Thirunavukkarasu, V. et al. (2019) Efficient Coupled-mode space based Non-Equilibrium Green’s Function Approach for Modeling Quantum Transport and Variability in Vertically Stacked SiNW FETs. In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. 2019, ISBN 9781728109404 (doi: 10.1109/SISPAD.2019.8870400)
Duan, M. ORCID: https://orcid.org/0000-0002-0205-9423, Navarro, C., Cheng, B., Adamu-Lema, F., Wang, X., Georgiev, V.P.
ORCID: https://orcid.org/0000-0001-6473-2508, Gamiz, F., Millar, C. and Asenov, A.
ORCID: https://orcid.org/0000-0002-9567-6366
(2019)
Thorough understanding of retention time of Z2FET memory operation.
IEEE Transactions on Electron Devices, 66(1),
pp. 383-388.
(doi: 10.1109/TED.2018.2877977)
2018
Lee, Jaehyun, Badami, Oves, Carrillo-Nunez, Hamilton, Berrada, Salim, Medina-Bailon, Cristina, Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Adamu-Lema, Fikru, Georgiev, Vihar P.
ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2018)
Variability predictions for the next technology generations of n-type
SixGe1-x nanowire MOSFETs.
Micromachines, 9(12),
643.
(doi: 10.3390/mi9120643)
Berrada, Salim, Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Carrillo-Nunez, Hamilton, Duan, Meng
ORCID: https://orcid.org/0000-0002-0205-9423, Adamu-Lema, Fikru, Lee, Jaehyun, Georgiev, Vihar
ORCID: https://orcid.org/0000-0001-6473-2508, Medina Bailon, Cristina and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2018)
NESS: new flexible Nano-Electronic Simulation Software.
In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018,
pp. 22-25.
ISBN 9781538667910
(doi: 10.1109/SISPAD.2018.8551701)
Berrada, Salim, Lee, Jaehyun, Carrillo-Nunez, Hamilton, Medina Bailon, Cristina, Adamu-Lema, Fikru, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2018)
Quantum Transport Investigation of Threshold Voltage Variability in Sub-10 nm JunctionlessSi Nanowire FETs.
In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018,
pp. 244-247.
ISBN 9781538667910
(doi: 10.1109/SISPAD.2018.8551638)
Duan, Meng ORCID: https://orcid.org/0000-0002-0205-9423, Cheng, Binjie, Adamu-Lema, Fikru, Asenov, P., Dutta, Tapas
ORCID: https://orcid.org/0000-0003-1917-314X, Wang, Xingsheng, Georgiev, Vihar P.
ORCID: https://orcid.org/0000-0001-6473-2508, Millar, C., Pfaeffli, P. and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2018)
Statistical Variability Simulation of Novel Capacitor-less Z2FET DRAM: From Transistor Circuit.
In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA, 24-26 Sept. 2018,
pp. 258-261.
ISBN 9781538667903
(doi: 10.1109/SISPAD.2018.8551710)
Carrillo-Nunez, Hamilton, Lee, Jaehyun, Berrada, Salim, Medina-Bailon, Cristina, Adamu-Lema, Fikru, Luisier, Mathieu, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366 and Georgiev, Vihar P.
ORCID: https://orcid.org/0000-0001-6473-2508
(2018)
Random dopant-induced variability in Si-InAs nanowire tunnel FETs: a quantum transport simulation study.
IEEE Electron Device Letters, 39(9),
pp. 1473-1476.
(doi: 10.1109/LED.2018.2859586)
Lee, J. et al. (2018) Understanding electromigration in Cu-CNT composite interconnects: a multiscale electrothermal simulation study. IEEE Transactions on Electron Devices, 65(9), pp. 3884-3892. (doi: 10.1109/TED.2018.2853550)
Cristoloveanu, S. et al. (2018) A review of the Z²-FET 1T-DRAM memory: operation mechanisms and key parameters. Solid-State Electronics, 143, pp. 10-19. (doi: 10.1016/j.sse.2017.11.012)
Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Dochioiu, Alexandru-Iusti, Adamu-Lema, Fikru, Berrada, Salim, Mirza, Muhammad M.
ORCID: https://orcid.org/0000-0002-1789-224X, Paul, Douglas
ORCID: https://orcid.org/0000-0001-7402-8530 and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2018)
Variability Study of High Current Junctionless Silicon Nanowire Transistors.
In: 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017,
ISBN 9781538627723
(doi: 10.1109/NMDC.2017.8350514)
2017
Navarro, C. et al. (2017) Z²-FET as capacitor-less eDRAM cell for high-density integration. IEEE Transactions on Electron Devices, 64(12), pp. 4904-4909. (doi: 10.1109/TED.2017.2759308)
Adamu-Lema, Fikru, Duan, Meng ORCID: https://orcid.org/0000-0002-0205-9423, Navarro, Carlos, Georgiev, Vihar
ORCID: https://orcid.org/0000-0001-6473-2508, Cheng, Binjie, Wang, Xingsheng, Millar, Campbell, Gamiz, Francisco and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2017)
Simulation Based DC and Dynamic Behaviour Characterization of Z2FET.
In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017,
pp. 317-320.
(doi: 10.23919/SISPAD.2017.8085328)
Al-Ameri, Talib ORCID: https://orcid.org/0000-0002-0666-2449, Georgiev, V.P.
ORCID: https://orcid.org/0000-0001-6473-2508, Adamu-Lema, Fikru and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2017)
Does a Nanowire Transistor Follow the Golden Ratio? A 2D Poisson-Schrödinger/3D Monte Carlo Simulation Study.
In: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan, 7-9 Sept 2017,
(doi: 10.23919/SISPAD.2017.8085263)
Duan, M. ORCID: https://orcid.org/0000-0002-0205-9423, Adamu-Lema, F., Cheng, B., Navarro, C., Wang, X., Georgiev, V.P.
ORCID: https://orcid.org/0000-0001-6473-2508, Gamiz, F., Millar, C. and Asenov, A.
ORCID: https://orcid.org/0000-0002-9567-6366
(2017)
2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application.
In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017,
pp. 325-328.
(doi: 10.23919/SISPAD.2017.8085330)
Wang, Xingsheng, Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Adamu-Lema, Fikru, Gerrer, Louis, Amoroso, Salvatore M. and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2017)
TCAD-based design technology co-optimization for variability in nanoscale SOI FinFETs.
In: Deleonibus, Simon (ed.)
Integrated Nanodevice and Nanosystem Fabrication.
Series: Pan Stanford series on intelligent nanosystems.
Pan Stanford: Singapore, pp. 215-252.
ISBN 9789814774222
Al-Ameri, Talib ORCID: https://orcid.org/0000-0002-0666-2449, Georgiev, V.P.
ORCID: https://orcid.org/0000-0001-6473-2508, Adamu-Lema, F. and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2017)
Simulation study of vertically stacked lateral Si nanowires transistors for 5 nm CMOS applications.
IEEE Journal of the Electron Devices Society, 5(6),
pp. 466-472.
(doi: 10.1109/JEDS.2017.2752465)
Duan, M. et al. (2017) Interaction Between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction. In: 2017 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2-6 Apr 2017, XT5.1-XT5.7. (doi: 10.1109/IRPS.2017.7936419)
Al-Ameri, Talib ORCID: https://orcid.org/0000-0002-0666-2449, Georgiev, Vihar P.
ORCID: https://orcid.org/0000-0001-6473-2508, Sadi, Toufik, Wang, Yijiao, Adamu-Lema, Fikru, Wang, Xingsheng, Amoroso, Salvatore M., Towie, Ewan, Brown, Andrew and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2017)
Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit.
Solid-State Electronics, 129,
pp. 73-80.
(doi: 10.1016/j.sse.2016.12.015)
Adamu-Lema, Fikru, Duan, Meng ORCID: https://orcid.org/0000-0002-0205-9423, Berrada, Salim, Lee, Jaehyun, Al-Ameri, T.
ORCID: https://orcid.org/0000-0002-0666-2449, Georgiev, Vihar
ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2017)
Modelling and simulation of advanced semiconductor devices.
ECS Transactions, 80(4),
pp. 33-42.
(doi: 10.1149/08004.0033ecst)
Al-Ameri, Talib ORCID: https://orcid.org/0000-0002-0666-2449, Georgiev, V.P.
ORCID: https://orcid.org/0000-0001-6473-2508, Adamu-Lema, F. and Asenov, A.
ORCID: https://orcid.org/0000-0002-9567-6366
(2017)
Position-Dependent Performance in 5 nm Vertically Stacked Lateral Si Nanowires Transistors.
International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017.
Al-Ameri, Talib ORCID: https://orcid.org/0000-0002-0666-2449, Georgiev, V.P.
ORCID: https://orcid.org/0000-0001-6473-2508, Adamu-Lema, F. and Asenov, A.
ORCID: https://orcid.org/0000-0002-9567-6366
(2017)
Variability-Aware Simulations of 5 nm Vertically Stacked Lateral Si Nanowires Transistors.
International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017.
2016
Al-Ameri, Talib ORCID: https://orcid.org/0000-0002-0666-2449, Georgiev, Vihar
ORCID: https://orcid.org/0000-0001-6473-2508, Adamu-Lema, Fikru and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2016)
Influence of Quantum Confinement Effects and Device Electrostatic Driven Performance in Ultra-Scaled SixGe1-x Nanowire Transistors.
In: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2016), Vienna, Austria, 25-27 Jan 2016,
pp. 234-237.
ISBN 9781467386104
(doi: 10.1109/ULIS.2016.7440096)
2015
Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Amoroso, Salvatore M., Gerrer, Louis, Adamu-Lema, Fikru and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2015)
Interplay between quantum mechanical effects and a discrete trap position in ultrascaled FinFETs.
In: SISPAD 2015: International Conference on Semiconductor Process and Device Simulations, Washington, DC, USA, 9-11 Sept 2015,
pp. 246-249.
ISBN 9781467378581
(doi: 10.1109/SISPAD.2015.7292305)
Amoroso, Salvatore Maria, Adamu-Lema, Fikru, Brown, Andrew R. and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366
(2015)
A mobility correction approach for overcoming artifacts in atomistic drift-diffusion simulation of nano-MOSFETs.
IEEE Transactions on Electron Devices, 62(6),
pp. 2056-2060.
(doi: 10.1109/TED.2015.2419815)
Adamu-Lema, F., Wang, X., Amoroso, S.M., Gerrer, L., Millar, C. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366
(2015)
Comprehensive 'Atomistic' Simulation of Statistical Variability and Reliability in 14 nm Generation FinFETs.
In: 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington D.C.,USA, 09-11 Sep 2015,
pp. 157-160.
ISBN 9781467378598
Al-Ameri, T. ORCID: https://orcid.org/0000-0002-0666-2449, Wang, Y., Georgiev, V.P.
ORCID: https://orcid.org/0000-0001-6473-2508, Adamu-Lema, F., Wang, X. and Asenov, A.
ORCID: https://orcid.org/0000-0002-9567-6366
(2015)
Correlation between Gate Length, Geometry and Electrostatic Driven Performance in Ultra-Scaled Silicon Nanowire Transistors.
In: 10th IEEE Nanotechnology Materials and Devices Conference (NMDC), Anchorage, AK, USA, 13-16 Sep 2015,
pp. 30-34.
ISBN 9781467393621
(doi: 10.1109/NMDC.2015.7439240)
2014
Adamu-Lema, Fikru, Wang, Xingsheng, Amoroso, Salvatore Maria, Riddet, Craig, Cheng, Binjie, Shifren, Lucian, Aitken, Robert, Sinha, Saurahb, Yeric, Greg and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366
(2014)
Performance and variability of doped multithreshold FinFETs for 10-nm CMOS.
IEEE Transactions on Electron Devices, 61(10),
pp. 3372-3378.
(doi: 10.1109/TED.2014.2346544)
Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366, Adamu-Lema, Fikru, Wang, Xingsheng and Amoroso, Salvatore Maria
(2014)
Problems with the continuous doping TCAD simulations of decananometer CMOS transistors.
IEEE Transactions on Electron Devices, 61(8),
pp. 2745-2751.
(doi: 10.1109/TED.2014.2332034)
Amoroso, Salvatore Maria, Gerrer, Louis, Hussin, Razaidi, Adamu-Lema, Fikru and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366
(2014)
Time-dependent 3-D statistical KMC simulation of reliability in nanoscale MOSFETs.
IEEE Transactions on Electron Devices, 61(6),
pp. 1956-1962.
(doi: 10.1109/TED.2014.2318172)
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In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, 9-11 Sept. 2014,
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ISBN 9781479952878
(doi: 10.1109/SISPAD.2014.6931619)
Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366, Cheng, Binjie, Adamu-Lema, Fikru, Shifren, Lucian, Sinha, Saurabh, Ridet, Craig, Alexander, Craig L., Brown, Andrew R., Wang, Xingsheng and Amoroso, Salvatore M.
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2013
Gerrer, Louis, Amoroso, Salvatore Maria, Markov, Stanislav, Adamu-Lema, Fikru and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366
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IEEE Transactions on Electron Devices, 60(12),
pp. 4008-4013.
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Wang, Xingsheng, Adamu-Lema, Fikru, Cheng, Binjie and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366
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IEEE Transactions on Electron Devices, 60(5),
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2011
Asenov, Plamen, Adamu-Lema, Fikru, Roy, Scott, Millar, Campbell, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366, Roy, Gareth, Kovac, Urban and Reid, David
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In: 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan, 8-10 Sep 2011,
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ISBN 9781612844190
(doi: 10.1109/SISPAD.2011.6035024)
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ORCID: https://orcid.org/0000-0002-9599-5228, Georgiev, Vihar P.
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ORCID: https://orcid.org/0000-0001-9150-9520, Nagy, Daniel
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ORCID: https://orcid.org/0000-0001-9150-9520, Nagy, Daniel
ORCID: https://orcid.org/0000-0003-0854-6596, Georgiev, Vihar P.
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(doi: 10.1007/s10825-020-01519-0)
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ORCID: https://orcid.org/0000-0002-0666-2449, Georgiev, Vihar
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Modelling and simulation of advanced semiconductor devices.
ECS Transactions, 80(4),
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(2015)
A mobility correction approach for overcoming artifacts in atomistic drift-diffusion simulation of nano-MOSFETs.
IEEE Transactions on Electron Devices, 62(6),
pp. 2056-2060.
(doi: 10.1109/TED.2015.2419815)
Adamu-Lema, Fikru, Wang, Xingsheng, Amoroso, Salvatore Maria, Riddet, Craig, Cheng, Binjie, Shifren, Lucian, Aitken, Robert, Sinha, Saurahb, Yeric, Greg and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366
(2014)
Performance and variability of doped multithreshold FinFETs for 10-nm CMOS.
IEEE Transactions on Electron Devices, 61(10),
pp. 3372-3378.
(doi: 10.1109/TED.2014.2346544)
Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366, Adamu-Lema, Fikru, Wang, Xingsheng and Amoroso, Salvatore Maria
(2014)
Problems with the continuous doping TCAD simulations of decananometer CMOS transistors.
IEEE Transactions on Electron Devices, 61(8),
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(doi: 10.1109/TED.2014.2332034)
Amoroso, Salvatore Maria, Gerrer, Louis, Hussin, Razaidi, Adamu-Lema, Fikru and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366
(2014)
Time-dependent 3-D statistical KMC simulation of reliability in nanoscale MOSFETs.
IEEE Transactions on Electron Devices, 61(6),
pp. 1956-1962.
(doi: 10.1109/TED.2014.2318172)
Gerrer, L., Ding, J., Amoroso, S.M., Adamu-Lema, F., Hussin, R., Reid, D., Millar, C. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366
(2014)
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Microelectronics Reliability, 54(4),
pp. 682-697.
(doi: 10.1016/j.microrel.2014.01.024)
Gerrer, Louis, Amoroso, Salvatore Maria, Markov, Stanislav, Adamu-Lema, Fikru and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366
(2013)
3-D statistical simulation comparison of oxide reliability of planar MOSFETs and FinFET.
IEEE Transactions on Electron Devices, 60(12),
pp. 4008-4013.
(doi: 10.1109/TED.2013.2285588)
Wang, Xingsheng, Adamu-Lema, Fikru, Cheng, Binjie and Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366
(2013)
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IEEE Transactions on Electron Devices, 60(5),
pp. 1547-1554.
(doi: 10.1109/TED.2013.2254490)
Cheng, B., Roy, S., Roy, G., Adamu-Lema, F. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366
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Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells.
Solid-State Electronics, 49(5),
pp. 740-746.
(doi: 10.1016/j.sse.2004.09.005)
Book Sections
Adamu-Lema, F., Monzio Compagnoni, C., Badami, O., Georgiev, V. ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, A.
ORCID: https://orcid.org/0000-0002-9567-6366
(2020)
RTN and its intrinsic interaction with statistical variability sources in advanced nano-scale devices: a simulation study.
In: Grasser, Tibor (ed.)
Noise in Nanoscale Semiconductor Devices.
Springer: Cham, pp. 441-466.
ISBN 9783030374990
(doi: 10.1007/978-3-030-37500-3_13)
Wang, Xingsheng, Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Adamu-Lema, Fikru, Gerrer, Louis, Amoroso, Salvatore M. and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2017)
TCAD-based design technology co-optimization for variability in nanoscale SOI FinFETs.
In: Deleonibus, Simon (ed.)
Integrated Nanodevice and Nanosystem Fabrication.
Series: Pan Stanford series on intelligent nanosystems.
Pan Stanford: Singapore, pp. 215-252.
ISBN 9789814774222
Conference or Workshop Item
Xeni, Nikolas, Ghannam, Rami ORCID: https://orcid.org/0000-0001-6910-9280, Georgiev, Vihar
ORCID: https://orcid.org/0000-0001-6473-2508, Adamu-Lema, Fikru, Badami, Oves and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2020)
The Use of TCAD Simulations in Semiconductor Devices Teaching.
Transnational Engineering Education Using Technology Workshop (TREET 2020), Glasgow, UK, 31 Jul 2020.
ISBN 9781728188515
(doi: 10.1109/TREET50959.2020.9189752)
Al-Ameri, Talib ORCID: https://orcid.org/0000-0002-0666-2449, Georgiev, V.P.
ORCID: https://orcid.org/0000-0001-6473-2508, Adamu-Lema, F. and Asenov, A.
ORCID: https://orcid.org/0000-0002-9567-6366
(2017)
Position-Dependent Performance in 5 nm Vertically Stacked Lateral Si Nanowires Transistors.
International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017.
Al-Ameri, Talib ORCID: https://orcid.org/0000-0002-0666-2449, Georgiev, V.P.
ORCID: https://orcid.org/0000-0001-6473-2508, Adamu-Lema, F. and Asenov, A.
ORCID: https://orcid.org/0000-0002-9567-6366
(2017)
Variability-Aware Simulations of 5 nm Vertically Stacked Lateral Si Nanowires Transistors.
International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017.
Conference Proceedings
Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Adamu-Lema, Fikru, Xeni, Nikolas, Rezaei, Ali
ORCID: https://orcid.org/0000-0001-9150-9520, Dixit, Ankit
ORCID: https://orcid.org/0000-0002-6653-6460, Topaloglu, Ismail
ORCID: https://orcid.org/0000-0002-9599-5228, Georgiev, Vihar
ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2024)
Predictive Simulation of Nanosheet Transistors including the Impact of Access Resistance.
In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2024), San Jose, CA, USA, 25-27 Sept 2024,
(Accepted for Publication)
Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Adamu-Lema, Fikru, Nagy, Daniel
ORCID: https://orcid.org/0000-0003-0854-6596, Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366, Nebesnyi, Valerii, Han, Jin-Woo and Widjaja, Yuniarto
(2021)
Equivalent Circuit Macro-Compact Model of the 1T Bipolar SRAM Cell.
In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2021), Dallas, TX, USA, 27-29 Sept 2021,
pp. 285-288.
ISBN 9781665406857
(doi: 10.1109/SISPAD54002.2021.9592536)
Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Medina Bailon, Cristina, Rezaei, Ali
ORCID: https://orcid.org/0000-0001-9150-9520, Nagy, Daniel
ORCID: https://orcid.org/0000-0003-0854-6596, Adamu-Lema, Fikru, Xeni, Nikolas, Abourrig, Yassine, Kumar, Naveen
ORCID: https://orcid.org/0000-0002-4765-1789, Georgiev, Vihar
ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2021)
TCAD Simulation of Novel Semiconductor Devices.
In: International Conference on ASIC (ASICON) 2021, Kunming, China, 26-29 October 2021,
ISBN 9781665438674
(doi: 10.1109/ASICON52560.2021.9620465)
Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Adamu-Lema, Fikru, Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366, Widjaja, Yuniarto and Nebesnyi, Valerii
(2020)
Dynamic Simulation of Write ‘1’Operation in the Bi-stable 1-Transistor SRAM Cell.
In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sept.-6 Oct. 2020,
pp. 237-240.
ISBN 9784863487635
(doi: 10.23919/SISPAD49475.2020.9241653)
Georgiev, V.P. ORCID: https://orcid.org/0000-0001-6473-2508, Sengupta, A.
ORCID: https://orcid.org/0000-0003-1125-6389, Maciazek, P., Badami, O., Medina-Bailon, C., Dutta, T.
ORCID: https://orcid.org/0000-0003-1917-314X, Adamu-Lema, F. and Asenov, A.
ORCID: https://orcid.org/0000-0002-9567-6366
(2020)
Simulation of Gated GaAs-AlGaAs Resonant Tunneling Diodes for Tunable Terahertz Communication Applications.
In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020,
pp. 241-244.
ISBN 9784863487635
(doi: 10.23919/SISPAD49475.2020.9241677)
Lapham, P., Badami, Ov., Medina-Bailon, C., Adamu-Lema, F., Dutta, T. ORCID: https://orcid.org/0000-0003-1917-314X, Nagy, D.
ORCID: https://orcid.org/0000-0003-0854-6596, Georgiev, V.
ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, A.
ORCID: https://orcid.org/0000-0002-9567-6366
(2020)
A Combined First Principles and Kinetic Monte Carlo study of Polyoxometalate based Molecular Memory Devices.
In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020,
pp. 273-276.
ISBN 9784863487635
(doi: 10.23919/SISPAD49475.2020.9241606)
Medina Bailon, Cristina, Badami, Oves, Carrillo-Nunez, Hamilton, Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Nagy, Daniel
ORCID: https://orcid.org/0000-0003-0854-6596, Adamu-Lema, Fikru, Georgiev, Vihar P.
ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2020)
Enhanced Capabilities of the Nano-Electronic Simulation Software (NESS).
In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020,
pp. 293-296.
ISBN 9781728173542
(doi: 10.23919/SISPAD49475.2020.9241594)
Thirunavukkarasu, V. et al. (2019) Efficient Coupled-mode space based Non-Equilibrium Green’s Function Approach for Modeling Quantum Transport and Variability in Vertically Stacked SiNW FETs. In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. 2019, ISBN 9781728109404 (doi: 10.1109/SISPAD.2019.8870400)
Berrada, Salim, Dutta, Tapas ORCID: https://orcid.org/0000-0003-1917-314X, Carrillo-Nunez, Hamilton, Duan, Meng
ORCID: https://orcid.org/0000-0002-0205-9423, Adamu-Lema, Fikru, Lee, Jaehyun, Georgiev, Vihar
ORCID: https://orcid.org/0000-0001-6473-2508, Medina Bailon, Cristina and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2018)
NESS: new flexible Nano-Electronic Simulation Software.
In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018,
pp. 22-25.
ISBN 9781538667910
(doi: 10.1109/SISPAD.2018.8551701)
Berrada, Salim, Lee, Jaehyun, Carrillo-Nunez, Hamilton, Medina Bailon, Cristina, Adamu-Lema, Fikru, Georgiev, Vihar ORCID: https://orcid.org/0000-0001-6473-2508 and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2018)
Quantum Transport Investigation of Threshold Voltage Variability in Sub-10 nm JunctionlessSi Nanowire FETs.
In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018,
pp. 244-247.
ISBN 9781538667910
(doi: 10.1109/SISPAD.2018.8551638)
Duan, Meng ORCID: https://orcid.org/0000-0002-0205-9423, Cheng, Binjie, Adamu-Lema, Fikru, Asenov, P., Dutta, Tapas
ORCID: https://orcid.org/0000-0003-1917-314X, Wang, Xingsheng, Georgiev, Vihar P.
ORCID: https://orcid.org/0000-0001-6473-2508, Millar, C., Pfaeffli, P. and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2018)
Statistical Variability Simulation of Novel Capacitor-less Z2FET DRAM: From Transistor Circuit.
In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA, 24-26 Sept. 2018,
pp. 258-261.
ISBN 9781538667903
(doi: 10.1109/SISPAD.2018.8551710)
Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Dochioiu, Alexandru-Iusti, Adamu-Lema, Fikru, Berrada, Salim, Mirza, Muhammad M.
ORCID: https://orcid.org/0000-0002-1789-224X, Paul, Douglas
ORCID: https://orcid.org/0000-0001-7402-8530 and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2018)
Variability Study of High Current Junctionless Silicon Nanowire Transistors.
In: 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017,
ISBN 9781538627723
(doi: 10.1109/NMDC.2017.8350514)
Adamu-Lema, Fikru, Duan, Meng ORCID: https://orcid.org/0000-0002-0205-9423, Navarro, Carlos, Georgiev, Vihar
ORCID: https://orcid.org/0000-0001-6473-2508, Cheng, Binjie, Wang, Xingsheng, Millar, Campbell, Gamiz, Francisco and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2017)
Simulation Based DC and Dynamic Behaviour Characterization of Z2FET.
In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017,
pp. 317-320.
(doi: 10.23919/SISPAD.2017.8085328)
Al-Ameri, Talib ORCID: https://orcid.org/0000-0002-0666-2449, Georgiev, V.P.
ORCID: https://orcid.org/0000-0001-6473-2508, Adamu-Lema, Fikru and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2017)
Does a Nanowire Transistor Follow the Golden Ratio? A 2D Poisson-Schrödinger/3D Monte Carlo Simulation Study.
In: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan, 7-9 Sept 2017,
(doi: 10.23919/SISPAD.2017.8085263)
Duan, M. ORCID: https://orcid.org/0000-0002-0205-9423, Adamu-Lema, F., Cheng, B., Navarro, C., Wang, X., Georgiev, V.P.
ORCID: https://orcid.org/0000-0001-6473-2508, Gamiz, F., Millar, C. and Asenov, A.
ORCID: https://orcid.org/0000-0002-9567-6366
(2017)
2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application.
In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017,
pp. 325-328.
(doi: 10.23919/SISPAD.2017.8085330)
Duan, M. et al. (2017) Interaction Between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction. In: 2017 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2-6 Apr 2017, XT5.1-XT5.7. (doi: 10.1109/IRPS.2017.7936419)
Al-Ameri, Talib ORCID: https://orcid.org/0000-0002-0666-2449, Georgiev, Vihar
ORCID: https://orcid.org/0000-0001-6473-2508, Adamu-Lema, Fikru and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2016)
Influence of Quantum Confinement Effects and Device Electrostatic Driven Performance in Ultra-Scaled SixGe1-x Nanowire Transistors.
In: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2016), Vienna, Austria, 25-27 Jan 2016,
pp. 234-237.
ISBN 9781467386104
(doi: 10.1109/ULIS.2016.7440096)
Georgiev, Vihar P. ORCID: https://orcid.org/0000-0001-6473-2508, Amoroso, Salvatore M., Gerrer, Louis, Adamu-Lema, Fikru and Asenov, Asen
ORCID: https://orcid.org/0000-0002-9567-6366
(2015)
Interplay between quantum mechanical effects and a discrete trap position in ultrascaled FinFETs.
In: SISPAD 2015: International Conference on Semiconductor Process and Device Simulations, Washington, DC, USA, 9-11 Sept 2015,
pp. 246-249.
ISBN 9781467378581
(doi: 10.1109/SISPAD.2015.7292305)
Adamu-Lema, F., Wang, X., Amoroso, S.M., Gerrer, L., Millar, C. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366
(2015)
Comprehensive 'Atomistic' Simulation of Statistical Variability and Reliability in 14 nm Generation FinFETs.
In: 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington D.C.,USA, 09-11 Sep 2015,
pp. 157-160.
ISBN 9781467378598
Al-Ameri, T. ORCID: https://orcid.org/0000-0002-0666-2449, Wang, Y., Georgiev, V.P.
ORCID: https://orcid.org/0000-0001-6473-2508, Adamu-Lema, F., Wang, X. and Asenov, A.
ORCID: https://orcid.org/0000-0002-9567-6366
(2015)
Correlation between Gate Length, Geometry and Electrostatic Driven Performance in Ultra-Scaled Silicon Nanowire Transistors.
In: 10th IEEE Nanotechnology Materials and Devices Conference (NMDC), Anchorage, AK, USA, 13-16 Sep 2015,
pp. 30-34.
ISBN 9781467393621
(doi: 10.1109/NMDC.2015.7439240)
Adamu-Lema, F., Amoroso, S.M., Wang, X., Cheng, B., Shifren, L., Aitken, R., Sinha, S., Yeric, G. and Asenov, A. ORCID: https://orcid.org/0000-0002-9567-6366
(2014)
The discrepancy between the uniform and variability aware atomistic TCAD simulations of decananometer bulk MOSFETs and FinFETs.
In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, 9-11 Sept. 2014,
pp. 285-288.
ISBN 9781479952878
(doi: 10.1109/SISPAD.2014.6931619)
Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366, Cheng, Binjie, Adamu-Lema, Fikru, Shifren, Lucian, Sinha, Saurabh, Ridet, Craig, Alexander, Craig L., Brown, Andrew R., Wang, Xingsheng and Amoroso, Salvatore M.
(2014)
Predictive simulation of future CMOS technologies and their impact on circuits.
In: 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2014), Guilin, China, 28-31 Oct. 2014,
pp. 1411-1414.
Asenov, Plamen, Adamu-Lema, Fikru, Roy, Scott, Millar, Campbell, Asenov, Asen ORCID: https://orcid.org/0000-0002-9567-6366, Roy, Gareth, Kovac, Urban and Reid, David
(2011)
The effect of compact modelling strategy on SNM and Read Current variability in Modern SRAM.
In: 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan, 8-10 Sep 2011,
pp. 283-286.
ISBN 9781612844190
(doi: 10.1109/SISPAD.2011.6035024)