ESR 1 - Enrico Brugnoletto
ESR 1 will mainly focus on aspects related to III-V materials epitaxial growth on silicon, TEM analysis and development of a machine learning algorithm for defect classification. We also foresee the development of simulation framework to model the electronic and optical properties of individual defects.
Bio: BSc and MSc in Materials Science at the Università degli Studi di Padova (Italy). During his Master's, he spent an Erasmus semester studying Nanoscience at Aarhus Universitet (Denmark). He graduated with top Marks and cum laude, with a thesis regarding the mapping of thermally induced stress in GaN LEDs, using spectroscopic tools such as Raman spectroscopy. He spent 2 months carrying out part of his Master's thesis work at Technische Hochschule Ingolstadt (Germany).
Employment:
22 Months at IBM Research Zurich (Switzerland)
14 Months at University of Glasgow (UK)