Mahmud Hamid Abdelsattar Dwidar
Research title: Thermally Efficient Gallium Nitride Transistors for Future Wireless Communications
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Research title: Thermally Efficient Gallium Nitride Transistors for Future Wireless Communications
Dhongde, Aniket, Taking, Sanna, Ofiare, Afesomeh, Karami, Kaivan ORCID: https://orcid.org/0000-0002-7530-2922, Elksne, Maira, Dwidar, Mahmud, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2022)
DC and RF Characteristics of Buffer-Free AlGaN/GaN HEMT and MIS-HEMTs Using Si3N4 Passivated Mesa-Sidewall.
In: International Conference on Electronic and Photonic Integrated Circuits (EPIC- 2022), Andhra Pradesh, India, 15-17 Dec 2022,
(Accepted for Publication)
Dwidar, Mahmud, Wasige, Edward ORCID: https://orcid.org/0000-0001-5014-342X and Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204
(2022)
Effect of Annealing Temperature on the Sheet Resistance of AlN/GaN HEMTs.
UKNC 2022, 06 Jul 2022.
Dhongde, Aniket, Taking, Sanna, Elksne, Maira ORCID: https://orcid.org/0000-0003-2999-3520, Ofiare, Afesomeh, Karami, Kaivan
ORCID: https://orcid.org/0000-0002-7530-2922, Dwidar, Mahmud, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2022)
High Performance of AlGaN/GaN HEMTs using Buffer-Free GaN on SiC Structure.
45th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits, Ponta Delgada (São Miguel island – Azores), Portugal, 3-6 May 2022.
Dwidar, Mahmud, Wasige, Edward ORCID: https://orcid.org/0000-0001-5014-342X and Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204
(2022)
Effect of Annealing Temperature on the Sheet Resistance of AlN/GaN HEMTs.
UKNC 2022, 06 Jul 2022.
Dhongde, Aniket, Taking, Sanna, Elksne, Maira ORCID: https://orcid.org/0000-0003-2999-3520, Ofiare, Afesomeh, Karami, Kaivan
ORCID: https://orcid.org/0000-0002-7530-2922, Dwidar, Mahmud, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2022)
High Performance of AlGaN/GaN HEMTs using Buffer-Free GaN on SiC Structure.
45th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits, Ponta Delgada (São Miguel island – Azores), Portugal, 3-6 May 2022.
Dhongde, Aniket, Taking, Sanna, Ofiare, Afesomeh, Karami, Kaivan ORCID: https://orcid.org/0000-0002-7530-2922, Elksne, Maira, Dwidar, Mahmud, Al-Khalidi, Abdullah
ORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward
ORCID: https://orcid.org/0000-0001-5014-342X
(2022)
DC and RF Characteristics of Buffer-Free AlGaN/GaN HEMT and MIS-HEMTs Using Si3N4 Passivated Mesa-Sidewall.
In: International Conference on Electronic and Photonic Integrated Circuits (EPIC- 2022), Andhra Pradesh, India, 15-17 Dec 2022,
(Accepted for Publication)