Device Modelling Group

Brugnolotto, E., Aleksandrov, P., Sousa, M., Georgiev, V. (2024) Machine learning inspired nanowire classification method based on nanowire array scanning electron microscope images. Open Research Europe, 4, (doi: 10.12688/openreseurope.16696.1)

Mishra, S., Nair, N. M., Khandelwal, G., Rai, B., Georgiev, V. (2024) Capacitive-triboelectric based hybrid sensor system for human-like tactile perception. IEEE Sensors Letters, 8, (doi: 10.1109/LSENS.2024.3351692)

Kumar, N., Dixit, A., Rezaei, A., Dutta, T., Pascual García, C., Georgiev, V. (2023) Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for Memory and Sensing Applications. (doi: 10.1109/nmdc57951.2023.10343913)

Kumar, N., Pascual García, C., Dixit, A., Rezaei, A., Georgiev, V. (2023) Charge dynamics of amino acids fingerprints and the effect of density on FinFET-based electrolyte-gated sensor. Solid-State Electronics, 210, (doi: 10.1016/j.sse.2023.108789)

Bhardwaj, A., Kumar, P., Raj, B., Kumar, N., Anand, S. (2023) Design and optimization of vertical nanowire tunnel FET with electrostatic doping. Engineering Research Express, 5, (doi: 10.1088/2631-8695/acff3a)

Gandhi, N., Jaisawal, R. K., Rathore, S., Kondekar, P. N., Dixit, A., Kumar, N., Georgiev, V., Bagga, N. (2023) Gate Oxide Induced Reliability Assessment of Junctionless FinFET-Based Hydrogen Gas Sensor. (doi: 10.1109/SENSORS56945.2023.10324885)

Kumar, N., García, C. P., Rezaei, A., Dixit, A., Asenov, A., Georgiev, V. (2023) Electrolyte-Gated FET-based Sensing of Immobilized Amphoteric Molecules Including the Variability in Affinity of the Reactive Sites. (doi: 10.23919/SISPAD57422.2023.10319578)

Aleksandrov, P., Rezaei, A., Xeni, N., Dutta, T., Asenov, A., Georgiev, V. (2023) Fully Convolutional Generative Machine Learning Method for Accelerating Non-Equilibrium Green’s Function Simulations. (doi: 10.23919/SISPAD57422.2023.10319587)

Li, W., Wolff, N., Samuel, A. K., Wang, Y., Georgiev, V. P., Kienle, L., Ganin, A. (2023) Unlocking high-performance supercapacitor behavior and sustained chemical stability of 2D metallic CrSe2 by optimal electrolyte selection. ChemElectroChem, 10, (doi: 10.1002/celc.202300428)

Brugnolotto, E., Schmid, H., Georgiev, V., Sousa, M. (2023) In-plane III-V nanowires on Si (1 1 0) with quantum wells by selective epitaxy in templates. Crystal Growth and Design, 23, pp. 8034-8042. (doi: 10.1021/acs.cgd.3c00806)

Kumar, N., García, C. P., Dixit, A., Rezaei, A., Georgiev, V. (2023) Novel Detection Methodology of Milk-Oligopeptides Fingerprints using Ion-Sensitive BioFET. (doi: 10.1109/BioSensors58001.2023.10281172)

Aleksandrov, P., Rezaei, A., Dutta, T., Xeni, N., Asenov, A., Georgiev, V. (2023) Convolutional machine learning method for accelerating non-equilibrium Green’s function simulations in nanosheet transistor. IEEE Transactions on Electron Devices, 70, pp. 5448-5453. (doi: 10.1109/TED.2023.3306319)

Dam Vedel, C., Gunst, T., Smidstrup, S., Georgiev, V. P. (2023) Shockley-Read-Hall recombination and trap levels in In 0.53Ga 0.47As point defects from first principles. Physical Review B, 108, (doi: 10.1103/PhysRevB.108.094113)

Topaloglu, I. (2023) Sensitivity analysis based new numerical approach with green function for optimization. Journal of Electrical Engineering and Technology, (doi: 10.1007/s42835-023-01639-0)

Mishra, S., John, D. A., Kumar, N., Rai, B., Georgiev, V. (2023) Human-Inspired Stretch and Joint-Bend Sensing System Based on Flexible Sensors.

Singh, S., Solay, L. R., Anand, S., Kumar, N., Ranjan, R., Singh, A. (2023) Implementation of gate-all-around gate-engineered charge plasma nanowire FET-based common source amplifier. Micromachines, 14, (doi: 10.3390/mi14071357)

Anam, A., Amin, S. I., Prasad, D., Kumar, N., Anand, S. (2023) Undoped vertical dual-bilayer TFET with a super-steep sub-threshold swing: proposal and performance comparative analysis. Semiconductor Science and Technology, 38, (doi: 10.1088/1361-6641/ACD2F9)

Medina Bailon, C., Nedjalkov, M., Georgiev, V., Selberherr, S., Asenov, A. (2023) Comprehensive mobility study of silicon nanowire transistors using multi-subband models. Nano Express, 4, (doi: 10.1088/2632-959X/acdb8a)

Kumar, N., Dhar, R. P. S., Pascual Garcia, C., Georgiev, V. (2023) A novel computational framework for simulations of bio-field effect transistors. ECS Transactions, 111, pp. 249-260. (doi: 10.1149/11101.0249ecst)

Brugnolotto, E., Scherrer, M., Schmid, H., Georgiev, V., Sousa, M. (2023) Growth of type I superlattice III-V heterostructure in horizontal nanowires enclosed in a silicon oxide template. Journal of Crystal Growth, 603, (doi: 10.1016/j.jcrysgro.2022.127015)

Dhar, R., Kumar, N., Garcia, C. P., Georgiev, V. (2023) Deriving a novel methodology for nano-BioFETs and analysing the effect of high-k oxides on the amino-acids sensing application. Solid-State Electronics, 200, (doi: 10.1016/j.sse.2022.108525)

Majeed, L., Amin, S. I., Rasool, Z., Bashir, I., Kumar, N., Anand, S. (2023) TCAD device modeling and simulation study of organic field effect transistor-based pH sensor with tunable sensitivity for surpassing Nernst limit. Electronics, 12, (doi: 10.3390/electronics12030536)

Anam, A., Kumar, N., Amin, S. I., Prasad, D., Anand, S. (2023) Charge-plasma based symmetrical-gate complementary electron-hole bilayer TFET with improved performance for sub-0.5 V operation. Semiconductor Science and Technology, 38, (doi: 10.1088/1361-6641/ACA7DB)

Topaloglu, I. (2023) Deep learning based a new approach for power quality disturbances classification in power transmission system. Journal of Electrical Engineering and Technology, 18, pp. 77-88. (doi: 10.1007/s42835-022-01177-1)

Nagy, D., Rezaei, A., Xeni, N., Dutta, T., Adamu-Lema, F., Topaloglu, I., Georgiev, V. P., Asenov, A. (2023) Hierarchical simulation of nanosheet field effect transistor: NESS flow. Solid-State Electronics, 199, (doi: 10.1016/j.sse.2022.108489)

Raman, A., Chattopadhyay, S. P., Ranjan, R., Kumar, N., Kakkar, D., Sharma, R. (2022) Design and investigation of dual dielectric recessed-gate AlGaN/GaN HEMT as gas sensor application. Transactions on Electrical and Electronic Materials, 23, pp. 618-623. (doi: 10.1007/s42341-022-00391-y)

Bhardwaj, A., Solay, L. R., Kumar, N., Amin, S. I., Singh, A., Raj, B., Kumar, P., Anand, S. (2022) Doping-less TFET based common source amplifier implementation and behaviour analysis under symmetric and asymmetric conditions. Silicon, 14, pp. 12251-12260. (doi: 10.1007/s12633-022-01921-2)

Dam Vedel, C., Smidstrup, S., Georgiev, V. P. (2022) First-principles investigation of polytypic defects in InP. Scientific Reports, 12, (doi: 10.1038/s41598-022-24239-w)

Aliyana, A. K., Ganguly, P., Beniwal, A., Kumar, S.K. N., Dahiya, R. (2022) Disposable pH sensor on paper using screen-printed graphene-carbon ink modified zinc oxide nanoparticles. IEEE Sensors Journal, 22, pp. 21049-21056. (doi: 10.1109/JSEN.2022.3206212)

Raj Solay, L., Kumar, N., Intekhab Amin, S., Kumar, P., Anand, S. (2022) Design and performance analysis of gate-all-around negative capacitance dopingless nanowire tunnel field effect transistor. Semiconductor Science and Technology, 37, (doi: 10.1088/1361-6641/ac86e9)

Gupta, A. K., Raman, A., Kumar, N. (2022) Design considerations and optimization of electrostatic doped ferroelectric nanotube tunnel FET: analog and noise analysis. Silicon, 14, pp. 10357-10373. (doi: 10.1007/s12633-022-01720-9)

Guan, Y., Georgiev, V. P., Asenov, A., Liang, F., Chen, H. (2022) Impact of the Figures of Merit (FoMs) definitions on the variability in nanowire TFET: NEGF simulation study. IEEE Transactions on Electron Devices, 69, pp. 6394-6399. (doi: 10.1109/TED.2022.3204596)

Lapham, P., Georgiev, V. (2022) Theoretically probing the relationship between barrier length and resistance in Al/AlOx/Al tunnel junctions. Solid-State Electronics, 197, (doi: 10.1016/j.sse.2022.108442)

Dhar, R., Kumar, N., Pascual Garcia, C., Georgiev, V. (2022) Assessing the effect of scaling high-aspect-ratio ISFET with physical model interface for nano-biosensing application. Solid-State Electronics, 195, (doi: 10.1016/j.sse.2022.108374)

Vitanov, P., Ivanova, T., Dikov, H., Terziyska, P., Ganchev, M., Petkov, N., Georgiev, Y., Asenov, A. (2022) Effect of a discontinuous Ag layer on optical and electrical properties of ZnO/Ag/ZnOStructures. Coatings, 12, (doi: 10.3390/coatings12091324)

Sachdeva, R., Bhushan, A., Bajaj, A., Gupta, M., Kumar, P., Raman, A., Ranjan, R., Kumar, N. (2022) Investigation of variation in temperature on steep subthreshold slope nanowire tunnel field effect transistor based biosensor. Engineering Research Express, 4, (doi: 10.1088/2631-8695/ac8640)

Bharadwaj, H., Kumar, N., Amin, S. I., Anand, S. (2022) Charge plasma based vertical nanowire tunnel field effect transistor: design and sensitivity analysis for biosensing application. Silicon, 14, pp. 7677-7684. (doi: 10.1007/s12633-021-01512-7)

Shukla, R. P., Bomer, J. G., Wijnperle, D., Kumar, N., Georgiev, V. P., Singh, A. C., Krishnamoorthy, S., García, C. P., Pud, S., Olthuis, W. (2022) Planar junctionless field-effect transistor for detecting biomolecular interactions. Sensors, 22, (doi: 10.3390/s22155783)

Rezaei, A., Maciazek, P., Sengupta, A., Dutta, T., Medina-Bailon, C., Asenov, A., Georgiev, V. P. (2022) Statistical device simulations of III-V nanowire resonant tunneling diodes as physical unclonable functions source. Solid-State Electronics, 194, (doi: 10.1016/j.sse.2022.108339)

Gauhar, G. A., Chenchety, A., Yenugula, H., Georgiev, V., Asenov, A., Badami, O. (2022) Study of gate current in advanced MOS architectures. Solid-State Electronics, 194, (doi: 10.1016/j.sse.2022.108345)

Tok, K. H., Mehedi, M., Zhang, J. F., Brown, J., Ye, Z., Ji, Z., Zhang, W., Marsland, J. S., Asenov, A., Georgiev, V. (2022) An integral methodology for predicting long-term RTN. IEEE Transactions on Electron Devices, 69, pp. 3869-3875. (doi: 10.1109/TED.2022.3176585)

Wighmal, K., Peddi, G., Apoorva, , Kumar, N., Amin, S. I., Anand, S. (2022) Gate all around dopingless nanotube TFET biosensor with Si0.5Ge0.5 - based source. Silicon, 14, pp. 5951-5959. (doi: 10.1007/s12633-021-01361-4)

Aliyana, A. K., Baburaj, A., Jalajamony, H. M., Kumar S.K., N., Dahiya, R., Fernadez, R. E. (2022) Impact of Analyte pH on the Sensitivity of Screen-Printed Flexible Ammonium Sensor. (doi: 10.1109/fleps53764.2022.9781496)

Upadhyay, U., Raman, A., Ranjan, R., Kumar, N. (2022) Overlapped gate-source/drain H-shaped TFET: proposal, design and linearity analysis. Silicon, 14, pp. 6415-6424. (doi: 10.1007/s12633-021-01404-w)

Kumar, N., Dhar, R. P. S., García, C. P., Georgiev, V. (2022) Discovery of Amino Acid fingerprints transducing their amphoteric signatures by field-effect transistors. ChemRxiv, (doi: 10.26434/chemrxiv-2022-bm062-v2)

Lapham, P., Georgiev, V. (2022) Computational study of oxide stoichiometry and variability in the Al/AlOx/Al tunnel junction. Nanotechnology, 33, (doi: 10.1088/1361-6528/ac5f2e)

Lal, K., Verma, A., Kumar, P., Kumar, N., Amin, S. I., Anand, S. (2022) Design and performance enhancement of gate-on-source PNPN doping–less vertical nanowire TFET. Silicon, 14, pp. 4375-4382. (doi: 10.1007/s12633-021-01222-0)

Gupta, A. K., Raman, A., Kumar, N., Shekhar, D., Kumar, P. (2022) Design and analysis of dopingless charge-plasma-based ring architecture of tunnel field-effect transistor for low-power application. CRC Press

Kumar, P., Gupta, M., Singh, K., Gupta, A. K., Kumar, N. (2022) Design and analysis of transition metal dichalcogenide-based feedback transistor. CRC Press

Shoaib, M., Amin, S. I., Kumar, N., Anand, S., Chunn, A., Alam, M. S. (2022) Device and circuit level assessment of negative capacitance TFETs for low-power high-performance digital circuits. ECS Journal of Solid State Science and Technology, 11, (doi: 10.1149/2162-8777/ac6d76)

Okte, L., Raman, A., Raj, B., Kumar, N. (2022) Junctionless silicon nanotube tunnel field effect transistor based resistive temperature detector. Silicon, 14, pp. 3281-3291. (doi: 10.1007/s12633-021-01102-7)

Chen, R., Chen, L., Liang, J., Cheng, Y., Elloumi, S., Lee, J., Xu, K., Georgiev, V. P., Ni, K., Debacker, P., Asenov, A., Todri-Sanial, A. (2022) Carbon nanotube SRAM in 5-nm technology node design, optimization, and performance evaluation--part I: CNFET transistor optimization. IEEE Transactions on Very Large Scale Integration Systems, 30, pp. 432-439. (doi: 10.1109/TVLSI.2022.3146125)

Chen, R., Chen, L., Liang, J., Cheng, Y., Elloumi, S., Lee, J., Xu, K., Georgiev, V. P., Ni, K., Debacker, P., Asenov, A., Todri-Sanial, A. (2022) Carbon nanotube SRAM in 5-nm technology node design, optimization, and performance evaluation--part II: CNT interconnect optimization. IEEE Transactions on Very Large Scale Integration Systems, 30, pp. 440-448. (doi: 10.1109/TVLSI.2022.3146064)

Kumar, P., Gupta, M., Singh, K., Kumar, N. (2022) Linearity analysis of MoTe2-FET based single transistor AND gate using Non-equilibrium Green's function. Transactions on Electrical and Electronic Materials, 23, pp. 164-170. (doi: 10.1007/s42341-021-00336-x)

Alam, S., Raman, A., Raj, B., Kumar, N., Singh, S. (2022) Design and analysis of gate overlapped/underlapped NWFET based lable free biosensor. Silicon, 14, pp. 989-996. (doi: 10.1007/s12633-020-00880-w)

Dutta, T., Medina Bailon, C., Xeni, N., Georgiev, V., Asenov, A. (2022) Density Gradient Based Quantum-Corrected 3D Drift-Diffusion Simulator for Nanoscale MOSFETs. (doi: 10.1109/NMDC50713.2021.9677480)

Singh, S., Singh, S., Kumar, N., Singh, N. K., Ranjan, R., Anand, S. (2022) Lead zirconium titanate (PZT)-based gate-all-around negative-capacitance junctionless nanowire FET for distortionless low-power applications. Journal of Electronic Materials, 51, pp. 196-206. (doi: 10.1007/s11664-021-09277-w)

Vedel, C. D., Brugnolotto, E., Smidstrup, S., Georgiev, V. P. (2021) Impact of Different Types of Planar Defects on Current Transport in Indium Phosphide (InP) (doi: 10.1109/EuroSOI-ULIS53016.2021.9560698)

Dhar, R. P. S., Kumar, N., Medina-Bailon, C., Garcia, C. P., Georgiev, V. P. (2021) TCAD Simulations of High-Aspect-Ratio Nano-biosensor for Label-Free Sensing Application. (doi: 10.1109/EuroSOI-ULIS53016.2021.9560701)

Apoorva, , Kumar, N., Intekhab Amin, S., Anand, S. (2021) Design and investigation of negative capacitance–based core‐shell dopingless nanotube tunnel field‐effect transistor. IET Circuits, Devices and Systems, 15, pp. 686-694. (doi: 10.1049/cds2.12064)

Dutta, T., Georgiev, V., Asenov, A. (2021) Stability and Vmin analysis of ferroelectric negative capacitance FinFET based SRAM in the presence of variability. Solid-State Electronics, 184, (doi: 10.1016/j.sse.2021.108100)

Martinez-Oliver, C., Moselund, K. E., Georgiev, V. P. (2021) Evaluation of Material Profiles for III-V Nanowire Photodetectors. (doi: 10.1109/NUSOD52207.2021.9541533)

singh, A., Sajad, M., Singh, A., Kumar, N., Amin, S. I., Anand, S. (2021) Design and analysis of negative capacitance based dual material dopingless tunnel FET. Superlattices and Microstructures, 156, (doi: 10.1016/j.spmi.2021.106964)

Medina-Bailon, C., Kumar, N., Dhar, R. P. S., Todorova, I., Lenoble, D., Georgiev, V. P., Pascual García, C. (2021) Comprehensive analytical modelling of an absolute pH sensor. Sensors, 21, (doi: 10.3390/s21155190)

Kumar, P., Gupta, M., Singh, K., Kumar, N. (2021) Back-gated MoTe2 based 1T-AND gate using non-equilibrium Green's function: design and investigation. Journal of Electronic Materials, 50, pp. 3422-3428. (doi: 10.1007/S11664-021-08820-Z)

Singh, J., Chakraborty, D., Kumar, N. (2021) Design and parametric variation assessment of dopingless nanotube field-effect transistor (DL-NT-FET) for high performance. Silicon, 14, pp. 4097-4105. (doi: 10.1007/s12633-021-01182-5)

Medina-Bailon, C., Padilla, J. L., Sampedro, C., Donetti, L., Gergiev, V. P., Gamiz, F., Asenov, A. (2021) Self-consistent enhanced S/D tunneling implementation in a 2D MS-EMC nanodevice simulator. Micromachines, 12, (doi: 10.3390/mi12060601)

Medina-Bailon, C., Dutta, T., Rezaei, A., Nagy, D., Adamu-Lema, F., Georgiev, V. P., Asenov, A. (2021) Simulation and modeling of novel electronic device architectures with NESS (Nano-Electronic Simulation Software): a modular nano TCAD simulation framework. Micromachines, 12, (doi: 10.3390/mi12060680)

Guan, Y., Carrillo-Nuñez, H., Georgiev, V. P., Asenov, A., Liang, F., Li, Z., Chen, H. (2021) Quantum simulation investigation of work-function variation in nanowire tunnel FETs. Nanotechnology, 32, (doi: 10.1088/1361-6528/abd125)

Raman, A., Chaturvedi, C., Kumar, N. (2021) Multi‐quantum well‐based solar cell. Wiley

Lapham, P., Vilà-Nadal, L., Cronin, L., Georgiev, V. P. (2021) Influence of the contact geometry and counterions on the current flow and charge transfer in polyoxometalate molecular junctions: a density functional theory study. Journal of Physical Chemistry C, 125, pp. 3599-3610. (doi: 10.1021/acs.jpcc.0c11038)

Dutta, T., Adamu-Lema, F., Nagy, D., Asenov, A., Nebesnyi, V., Han, J.-W., Widjaja, Y. (2021) Equivalent Circuit Macro-Compact Model of the 1T Bipolar SRAM Cell. (doi: 10.1109/SISPAD54002.2021.9592536)

Dutta, T., Medina Bailon, C., Rezaei, A., Nagy, D., Adamu-Lema, F., Xeni, N., Abourrig, Y., Kumar, N., Georgiev, V., Asenov, A. (2021) TCAD Simulation of Novel Semiconductor Devices. (doi: 10.1109/ASICON52560.2021.9620465)

Medina-Bailon, C., Dutta, T., Adamu-Lema, F., Rezaei, A., Nagy, D., Georgiev, V. P., Asenov, A. (2020) Nano-electronic simulation software (NESS): a novel open-source TCAD simulation environment. Journal of Microelectronic Manufacturing, 3, (doi: 10.33079/jomm.20030407)

Prakash Singh, R., Khosla, M., Saini, I., Kumar, N. (2020) Design and analysis of IGZO based junctionless thin film transistor using SOI technology. Silicon, 13, pp. 2309-2318. (doi: 10.1007/s12633-020-00803-9)

Lapham, P., Badami, O., Medina-Bailon, C., Adamu-Lema, F., Dutta, T., Nagy, D., Georgiev, V., Asenov, A. (2020) A Combined First Principles and Kinetic Monte Carlo study of Polyoxometalate based Molecular Memory Devices. (doi: 10.23919/SISPAD49475.2020.9241606)

Kumar, K., Raman, A., Raj, B., Singh, S., Kumar, N. (2020) Design and optimization of junctionless-based devices with noise reduction for ultra-high frequency applications. Applied Physics A: Materials Science and Processing, 126, (doi: 10.1007/s00339-020-04092-2)

Dutta, T., Adamu-Lema, F., Asenov, A., Widjaja, Y., Nebesnyi, V. (2020) Dynamic Simulation of Write ‘1’Operation in the Bi-stable 1-Transistor SRAM Cell. (doi: 10.23919/SISPAD49475.2020.9241653)

Medina Bailon, C., Badami, O., Carrillo-Nunez, H., Dutta, T., Nagy, D., Adamu-Lema, F., Georgiev, V. P., Asenov, A. (2020) Enhanced Capabilities of the Nano-Electronic Simulation Software (NESS) (doi: 10.23919/SISPAD49475.2020.9241594)

McGhee, J., Georgiev, V. P. (2020) First Principle Simulations of Electronic and Optical Properties of a Hydrogen Terminated Diamond Doped by a Molybdenum Oxide Molecule. (doi: 10.23919/SISPAD49475.2020.9241630)

Georgiev, V.P., Sengupta, A., Maciazek, P., Badami, O., Medina-Bailon, C., Dutta, T., Adamu-Lema, F., Asenov, A. (2020) Simulation of Gated GaAs-AlGaAs Resonant Tunneling Diodes for Tunable Terahertz Communication Applications. (doi: 10.23919/SISPAD49475.2020.9241677)

Kumar, P., Gupta, M., Singh, K., Kumar, N. (2020) Design and investigation of split-gate MoTe2-based FET as single transistor AND gate using nonequilibrium Green’s function. IEEE Transactions on Electron Devices, 67, pp. 5221-5228. (doi: 10.1109/TED.2020.3025518)

McGhee, J., Georgiev, V. P. (2020) Electronic and Optical Properties of Hydrogen-Terminated Diamond Doped by Molybdenum Oxide: A Density Functional Theory Study. (doi: 10.1109/NUSOD49422.2020.9217662)

Xeni, N., Ghannam, R., Georgiev, V., Adamu-Lema, F., Badami, O., Asenov, A. (2020) The Use of TCAD Simulations in Semiconductor Devices Teaching. (doi: 10.1109/TREET50959.2020.9189752)

Berrada, S., Carrillo-Nunez, H., Lee, J., Medina Bailon, C., Dutta, T., Badami, O., Adamu-Lema, F., Thirunavukkarasu, V., Georgiev, V., Asenov, A. (2020) Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform. Journal of Computational Electronics, 19, pp. 1031-1046. (doi: 10.1007/s10825-020-01519-0)

Dutta, T., Georgiev, V., Asenov, A. (2020) Vmin Prediction for Negative Capacitance MOSFET based SRAM. (doi: 10.1109/EUROSOI-ULIS49407.2020.9365282)

Kumar, N., Raman, A. (2020) Novel asymmetric recessed-gate/source architecture advancement of dual-metal-date SiGe/Si dopingless nanowire-TFET for low-voltage performance optimization. Silicon, 13, pp. 3141-3151. (doi: 10.1007/s12633-020-00659-z)

Badami, O., Sadi, T., Adamu-Lema, F., Lapham, P., Mu, D., Nagy, D., Georgiev, V., Ding, J., Asenov, A. (2020) A Kinetic Monte Carlo study of retention time in a POM molecule-based flash memory. IEEE Transactions on Nanotechnology, 19, pp. 704-710. (doi: 10.1109/TNANO.2020.3016182)

Carrillo-Nuñez, H., Medina-Bailón, C., Georgiev, V. P., Asenov, A. (2020) Full-band quantum transport simulation in presence of hole-phonon interactions using a mode-space k·p approach. Nanotechnology, 32, (doi: 10.1088/1361-6528/abacf3)

Adamu-Lema, F., Monzio Compagnoni, C., Badami, O., Georgiev, V., Asenov, A. (2020) RTN and its intrinsic interaction with statistical variability sources in advanced nano-scale devices: a simulation study. Springer

McGhee, J., Georgiev, V. P. (2020) Simulation study of surface transfer doping of hydrogenated diamond by MoO₃ and V₂O₅ metal oxides. Micromachines, 11, (doi: 10.3390/mi11040433)

Medina-Bailon, C., Carrillo-Nunez, H., Lee, J., Sampedro, C., Padilla, J. L., Donetti, L., Georgiev, V., Gamiz, F., Asenov, A. (2020) Quantum enhancement of a S/D tunneling model in a 2D MS-EMC nanodevice simulator: NEGF comparison and impact of effective mass variation. Micromachines, 11, (doi: 10.3390/mi11020204)

Kumar, N., Raman, A. (2019) Design and analog performance analysis of charge-plasma based cylindrical GAA silicon nanowire tunnel field effect transistor. Silicon, 12, pp. 2627-2634. (doi: 10.1007/s12633-019-00355-7)

Kumar Gupta, A., Raman, A., Kumar, N. (2019) Cylindrical nanowire-TFET with core-shell channel architecture: design and investigation. Silicon, 12, pp. 2329-2336. (doi: 10.1007/s12633-019-00331-1)

Mushtaq, U., Kumar, N., Anand, S., Amin, I. (2019) Design and performance analysis of core-shell dual metal-dual gate cylindrical GAA silicon nanotube-TFET. Silicon, 12, pp. 2355-2363. (doi: 10.1007/s12633-019-00329-9)

Xeni, N., Ghannam, R., Udama, F., Georgiev, V., Asenov, A. (2019) Semiconductor Device Visualization using TCAD Software: Case Study for Biomedical Applications.

Thirunavukkarasu, V., Carrillo-Nunez, H., Adamu-Lema, F., Berrada, S., Badami, O., Medina-Bailón, C., Dutta, T., Lee, J., Guen, Y., Georgiev, V., Asenov, A. (2019) Efficient Coupled-mode space based Non-Equilibrium Green’s Function Approach for Modeling Quantum Transport and Variability in Vertically Stacked SiNW FETs. (doi: 10.1109/SISPAD.2019.8870400)

Sadi, T., Badami, O., Georgiev, V., Ding, J., Asenov, A. (2019) Physical Insights into the Transport Properties of RRAMs Based on Transition Metal Oxides. (doi: 10.1109/SISPAD.2019.8870391)

Medina-Bailon, C., Sadi, T., Nedjalkov, M., Carrillo-Nuñez, H., Lee, J., Badami, O., Georgiev, V., Selberherr, S., Asenov, A. (2019) Mobility of circular and elliptical si nanowire transistors using a multi-subband 1d formalism. IEEE Electron Device Letters, 40, pp. 1571-1574. (doi: 10.1109/LED.2019.2934349)

Medina-Bailon, C., Dutta, T., Klüpfel, S., Georgiev, V., Asenov, A. (2019) Scaling-aware TCAD Parameter Extraction Methodology for Mobility Prediction in Tri-gate Nanowire Transistors. (doi: 10.1109/SISPAD.2019.8870556)

Carrillo-Nunez, H., Dimitrova, N., Asenov, A., Georgiev, V. (2019) Machine learning approach for predicting the effect of statistical variability in Si junctionless nanowire transistors. IEEE Electron Device Letters, 40, pp. 1366-1369. (doi: 10.1109/LED.2019.2931839)

Guan, Y., Li, Z., Carrillo-Nunez, H., Zhang, Y., Georgiev, V. P., Asenov, A., Liang, F. (2019) An accurate analytical model for tunnel FET output characteristics. IEEE Electron Device Letters, 40, pp. 1001-1004. (doi: 10.1109/LED.2019.2914014)

Badami, O., Medina-Bailon, C., Berrada, S., Carrillo-Nunez, H., Lee, J., Georgiev, V., Asenov, A. (2019) Comprehensive study of cross-section dependent effective masses for silicon based gate-all-around transistors. Applied Sciences, 9, (doi: 10.3390/app9091895)

Liang, J., Chen, R., Ramos, R., Lee, J., Okuno, H., Kalita, D., Georgiev, V., Berrada, S., Sadi, T., Uhlig, B., Lilienthal, K., Dhavamani, A., Konemann, F., Gotsmann, B., Goncalves, G., Chen, B., Asenov, A., Dijon, J., Todri-Sanial, A. (2019) Investigation of Pt-salt-doped-standalone-multiwall carbon nanotubes for on-chip interconnect applications. IEEE Transactions on Electron Devices, 66, pp. 2346-2352. (doi: 10.1109/TED.2019.2901658)

Kumar, N., Raman, A. (2019) Design and investigation of charge-plasma-based work function engineered dual-metal-heterogeneous gate Si-Si0.55Ge0.45 GAA-cylindrical NWTFET for ambipolar analysis. IEEE Transactions on Electron Devices, 66, pp. 1468-1474. (doi: 10.1109/TED.2019.2893224)

Medina Bailon, C., Padilla, J. L., Sadi, T., Sampedro, C., Godoy, A., Donetti, L., Georgiev, V. P., Gamiz, F., Asenov, A. (2019) Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices. IEEE Transactions on Electron Devices, 66, pp. 1145-1152. (doi: 10.1109/TED.2019.2890985)

Manut, A., Gao, R., Zhang, J. F., Ji, Z., Mehedi, M., Zhang, W. D., Vigar, D., Asenov, A., Kaczer, B. (2019) Trigger-when-charged: a technique for directly measuring RTN and BTI-induced threshold voltage fluctuation under use-Vdd. IEEE Transactions on Electron Devices, 66, pp. 1482-1488. (doi: 10.1109/TED.2019.2895700)

Sadi, T., Medina Bailon, C., Nedjalkov, M., Lee, J., Badami, O., Berrada, S., Carrillo-Nunez, H., Georgiev, V., Selberherr, S., Asenov, A. (2019) Simulation of the impact of ionized impurity scattering on the total mobility in Si nanowire transistors. Materials, 12, (doi: 10.3390/ma12010124)

Jayaswal, N., Raman, A., Kumar, N., Singh, S. (2019) Design and analysis of electrostatic-charge plasma based dopingless IGZO vertical nanowire FET for ammonia gas sensing. Superlattices and Microstructures, 125, pp. 256-270. (doi: 10.1016/j.spmi.2018.11.009)

Kumar, N., Mushtaq, U., Intekhab Amin, S., Anand, S. (2019) Design and performance analysis of Dual-Gate All around Core-Shell Nanotube TFET. Superlattices and Microstructures, 125, pp. 356-364. (doi: 10.1016/j.spmi.2018.09.012)

Duan, M., Navarro, C., Cheng, B., Adamu-Lema, F., Wang, X., Georgiev, V.P., Gamiz, F., Millar, C., Asenov, A. (2019) Thorough understanding of retention time of Z2FET memory operation. IEEE Transactions on Electron Devices, 66, pp. 383-388. (doi: 10.1109/TED.2018.2877977)

Lee, J., Medina-Bailon, C., Berrada, S., Carrillo-Nunez, H., Sadi, T., Georgiev, V. P., Nedjalkov, M., Asenov, A. (2019) A Multi-Scale Simulation Study of the Strained Si Nanowire FETs. (doi: 10.1109/NMDC.2018.8605884)

Mathew, P. T., Fang, F., Vila-Nadal, L., Cronin, L., Georgiev, V. (2019) First Principle Simulations of Current Flow in Inorganic Molecules: Polyoxometalates (POMs) (doi: 10.1109/EUROSOI-ULIS45800.2019.9041869)

Medina Bailon, C., Sadi, T., Sampedro, C., Padilla, J. L., Donetti, L., Georgiev, V., Gamiz, F., Asenov, A. (2019) Impact of the trap attributes on the gate leakage mechanisms in a 2D MS-EMC nanodevice simulator. Springer

Sadi, T., Badami, O., Georgiev, V., Asenov, A. (2019) Kinetic Monte Carlo Analysis of the Operation and Reliability of Oxide Based RRAMs. (doi: 10.1007/978-3-030-41032-2_49)

Dutta, T., Medina-Bailon, C., Carrillo-Nunez, H., Badami, O., Georgiev, V., Asenov, A. (2019) Schrödinger Equation Based Quantum Corrections in Drift-Diffusion: A Multiscale Approach. (doi: 10.1109/NMDC47361.2019.9084010)

Carrillo-Nunez, H., Wang, C., Asenov, A., Young, R., Georgiev, V. (2019) Simulation of Si Nanowire Quantum-Dot Devices for Authentication. (doi: 10.1109/EUROSOI-ULIS45800.2019.9041864)

McGhee, J., Moran, D. A., Georgiev, V. P. (2019) Simulations of Surface Transfer Doping of Hydrogenated Diamond by MoO3 Metal Oxide. (doi: 10.1109/EUROSOI-ULIS45800.2019.9041887)

Lee, J., Lamarche, M., Georgiev, V. P. (2019) The First-Priniple Simulation Study on the Specific Grain Boundary Resistivity in Copper Interconnects. (doi: 10.1109/NMDC.2018.8605907)

Lee, J., Badami, O., Carrillo-Nunez, H., Berrada, S., Medina-Bailon, C., Dutta, T., Adamu-Lema, F., Georgiev, V. P., Asenov, A. (2018) Variability predictions for the next technology generations of n-type SixGe1-x nanowire MOSFETs. Micromachines, 9, (doi: 10.3390/mi9120643)

Medina Bailon, C., Sampedro, C., Padilla, J. L., Godoy, A., Donetti, L., Georgiev, V. P., Gamiz, F., Asenov, A. (2018) Impact of Strain on S/D tunneling in FinFETs: a MS-EMC study. (doi: 10.1109/SISPAD.2018.8551707)

Medina Bailon, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carrillo-Nunez, H., Georgiev, V. P., Selberherr, S., Asenov, A. (2018) Impact of the Effective Mass on the Mobility in Si Nanowire Transistors. (doi: 10.1109/SISPAD.2018.8551630)

Dutta, T., Georgiev, V., Asenov, A. (2018) Interplay of RDF and Gate LER Induced Statistical Variability in Negative Capacitance FETs. (doi: 10.1109/SISPAD.2018.8551710)

Berrada, S., Dutta, T., Carrillo-Nunez, H., Duan, M., Adamu-Lema, F., Lee, J., Georgiev, V., Medina Bailon, C., Asenov, A. (2018) NESS: new flexible Nano-Electronic Simulation Software. (doi: 10.1109/SISPAD.2018.8551701)

Berrada, S., Lee, J., Carrillo-Nunez, H., Medina Bailon, C., Adamu-Lema, F., Georgiev, V., Asenov, A. (2018) Quantum Transport Investigation of Threshold Voltage Variability in Sub-10 nm JunctionlessSi Nanowire FETs. (doi: 10.1109/SISPAD.2018.8551638)

Duan, M., Cheng, B., Adamu-Lema, F., Asenov, P., Dutta, T., Wang, X., Georgiev, V. P., Millar, C., Pfaeffli, P., Asenov, A. (2018) Statistical Variability Simulation of Novel Capacitor-less Z2FET DRAM: From Transistor Circuit. (doi: 10.1109/SISPAD.2018.8551710)

Liang, J., Lee, J., Berrada, S., Georgiev, V., Pandey, R. R., Chen, R., Asenov, A., Todri-Sanial, A. (2018) Atomistic to circuit-level modeling of doped SWCNT for on-chip interconnects. IEEE Transactions on Nanotechnology, 17, pp. 1084-1088. (doi: 10.1109/TNANO.2018.2802320)

Chen, R., Liang, J., Lee, J., Georgiev, V. P., Ramos, R., Okuno, H., Kalita, D., Cheng, Y., Zhang, L., Pandey, R. R., Amoroso, S., Millar, C., Asenov, A., Dijon, J., Todri-Sanial, A. (2018) Variability study of MWCNT local interconnects considering defects and contact resistances - Part I: pristine MWCNT. IEEE Transactions on Electron Devices, 65, pp. 4955-4962. (doi: 10.1109/TED.2018.2868421)

Chen, R., Liang, J., Lee, J., Georgiev, V. P., Ramos, R., Okuno, H., Kalita, D., Cheng, Y., Zhang, L., Pandey, R. R., Amoroso, S., Millar, C., Asenov, A., Dijon, J., Todri-Sanial, A. (2018) Variability study of MWCNT local interconnects considering defects and contact resistances - Part II: impact of charge transfer doping. IEEE Transactions on Electron Devices, 65, pp. 4963-4970. (doi: 10.1109/TED.2018.2868424)

Carrillo-Nunez, H., Lee, J., Berrada, S., Medina-Bailon, C., Adamu-Lema, F., Luisier, M., Asenov, A., Georgiev, V. P. (2018) Random dopant-induced variability in Si-InAs nanowire tunnel FETs: a quantum transport simulation study. IEEE Electron Device Letters, 39, pp. 1473-1476. (doi: 10.1109/LED.2018.2859586)

Lee, J., Berrada, S., Adamu-Lema, F., Carrillo-Nunez, H., Nagy, N., Georgiev, V., Sadi, T., Liang, J., Ramos, R., Carrillo-Nunez, H., Kalita, D., Lilienthal, K., Wislicenus, M., Pandey, R., Chen, B., Teo, K. B.K., Goncalves, G., Okuno, H., Uhlig, B., Todri-Sanial, A., Dijon, J., Asenov, A. (2018) Understanding electromigration in Cu-CNT composite interconnects: a multiscale electrothermal simulation study. IEEE Transactions on Electron Devices, 65, pp. 3884-3892. (doi: 10.1109/TED.2018.2853550)

Georgiev, V. P. (2018) Development of Hierarchical Simulation Framework for Design and Optimization of Molecular Based Flash Cell. (doi: 10.1109/DRC.2018.8442234)

Uhlig, B., Dhavamani, A., Nagy, N., Lilienthal, K., Liske, R., Ramos, R., Dijon, J., Okuno, H., Kalita, D., Lee, J., Georgiev, V., Asenov, A., Amoroso, S., Wang, L., Koenemann, F., Gotsmann, B., Goncalves, G., Chen, B., Liang, J., Pandey, R. R., Chen, R., Todri-Sanial, A. (2018) Challenges and Progress on Carbon Nanotube Integration for BEOL Interconnects. (doi: 10.1109/IITC.2018.8430411)

Nedjalkov, M., Ellinghaus, P., Weinbub, J., Sadi, T., Asenov, A., Dimov, I., Selberherr, S. (2018) Stochastic analysis of surface roughness models in quantum wires. Computer Physics Communications, 228, pp. 30-37. (doi: 10.1016/j.cpc.2018.03.010)

Medina Bailon, C., Sampedro, C., Padilla, J.L., Godoy, A., Donetti, L., Gamiz, F., Asenov, A. (2018) MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections. (doi: 10.1109/ULIS.2018.8354758)

Dutta, T., Georgiev, V., Asenov, A. (2018) Random Discrete Dopant Induced Variability in Negative Capacitance Transistors. (doi: 10.1109/ULIS.2018.8354732)

Medina Bailon, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carrillo-Nunez, H., Georgiev, V., Selberherr, S., Asenov, A. (2018) Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors. (doi: 10.1109/ULIS.2018.8354723)

Cristoloveanu, S., Lee, K.H., Parihar, M.S., El Dirani, H., Lacord, J., Martinie, S., Le Royer, C., Barbe, J.-C., Mescot, X., Fonteneau, P., Galy, P., Gamiz, F., Navarro, C., Cheng, B., Duan, M., Adamu-Lema, F., Asenov, A., Taur, Y., Xu, Y., Kim, Y.-T., Wan, J., Bawedin, M. (2018) A review of the Z²-FET 1T-DRAM memory: operation mechanisms and key parameters. Solid-State Electronics, 143, pp. 10-19. (doi: 10.1016/j.sse.2017.11.012)

Carrillo-Nuñez, H., Mirza, M. M., Paul, D. J., MacLaren, D. A., Asenov, A., Georgiev, V. P. (2018) Impact of randomly distributed dopants on Ω-gate junctionless silicon nanowire transistors. IEEE Transactions on Electron Devices, 65, pp. 1692-1698. (doi: 10.1109/TED.2018.2817919)

Georgiev, V. P., Vila-Nadal, L., Cronin, L., Asenov, A. (2018) Molecular Based Flash Cell for Low Power Flash Application: Optimization and Variability Evaluation. (doi: 10.1109/NMDC.2017.8350505)

Georgiev, V. P., Dochioiu, A.-I., Adamu-Lema, F., Berrada, S., Mirza, M. M., Paul, D., Asenov, A. (2018) Variability Study of High Current Junctionless Silicon Nanowire Transistors. (doi: 10.1109/NMDC.2017.8350514)

Uhlig, B., Liang, J., Lee, J., Ramos, R., Dhavamani, A., Nagy, N., Dijon, J., Okuno, H., Kalita, D., Georgiev, V., Asenov, A., Amoroso, S., Wang, L., Millar, C., Konemann, F., Gotsmann, B., Goncalves, G., Chen, B., Pandey, R. R., Chen, R., Todri-Sanial, A. (2018) Progress on Carbon Nanotube BEOL Interconnects. (doi: 10.23919/DATE.2018.8342144)

Sadi, T., Mehonic, A., Montesi, L., Buckwell, M., Kenyon, A., Asenov, A. (2018) Investigation of resistance switching in SiOx RRAM cells using a 3D multi-scale kinetic Monte Carlo simulator. Journal of Physics: Condensed Matter, 30, (doi: 10.1088/1361-648X/aaa7c1)

Liang, J., Lee, J., Berrada, S., Georgiev, V., Asenov, A., Azemard-Crestani, A., Todri-Sanial, A. (2018) Atomistic to Circuit Level Modeling of Defective Doped SWCNTs with Contacts for On-Chip Interconnect Application. (doi: 10.1109/NMDC.2017.8350506)

Navarro, C., Duan, M., Parihar, M. S., Adamu-Lema, F., Coseman, S., Lacord, J., Lee, K., Sampedro, C., Cheng, B., El Dirani, H., Barbe, J.-C., Fonteneau, P., Kim, S.-I., Cristoloveanu, S., Bawedin, M., Millar, C., Galy, P., Le Royer, C., Karg, S., Riel, H., Wells, P., Kim, Y.-T., Asenov, A., Gamiz, F. (2017) Z²-FET as capacitor-less eDRAM cell for high-density integration. IEEE Transactions on Electron Devices, 64, pp. 4904-4909. (doi: 10.1109/TED.2017.2759308)

Navarro, C., Lacord, J., Parihar, M. S., Adamu-Lema, F., Duan, M., Rodriguez, N., Cheng, B., El Dirani, H., Barbe, J.-C., Fonteneau, P., Bawedin, M., Millar, C., Galy, P., Le Royer, C., Karg, S., Wells, P., Kim, Y.-T., Asenov, A., Cristoloveanu, S., Gamiz, F. (2017) Extended analysis of the Z²-FET: operation as capacitorless eDRAM. IEEE Transactions on Electron Devices, 64, pp. 4486-4491. (doi: 10.1109/TED.2017.2751141)

Thirunavukkarasu, V., Lee, J., Sadi, T., Georgiev, V. P., Lema, F.-A., Soundarapandian, K. P., Jhan, Y.-R., Yang, S.-Y., Lin, Y.-R., Kurniawan, E. D., Wu, Y.-C., Asenov, A. (2017) Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs. Superlattices and Microstructures, 111, pp. 649-655. (doi: 10.1016/j.spmi.2017.07.020)

Adamu-Lema, F., Duan, M., Navarro, C., Georgiev, V., Cheng, B., Wang, X., Millar, C., Gamiz, F., Asenov, A. (2017) Simulation Based DC and Dynamic Behaviour Characterization of Z2FET. (doi: 10.23919/SISPAD.2017.8085328)

Duan, M., Adamu-Lema, F., Cheng, B., Navarro, C., Wang, X., Georgiev, V.P., Gamiz, F., Millar, C., Asenov, A. (2017) 2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application. (doi: 10.23919/SISPAD.2017.8085330)

Lee, J., Liang, J., Amoroso, S. M., Sadi, T., Wang, L., Asenov, P., Pender, A., Reid, D. T., Georgiev, V. P., Millar, C., Todri-Sanial, A., Asenov, A. (2017) Atoms-to-Circuits Simulation Investigation of CNT Interconnects for Next Generation CMOS Technology. (doi: 10.23919/SISPAD.2017.8085287)

Al-Ameri, T., Georgiev, V.P., Adamu-Lema, F., Asenov, A. (2017) Does a Nanowire Transistor Follow the Golden Ratio? A 2D Poisson-Schrödinger/3D Monte Carlo Simulation Study. (doi: 10.23919/SISPAD.2017.8085263)

Lee, J., Berrada, S., Liang, J., Sadi, T., Georgiev, V. P., Todri-Sanial, A., Kalita, D., Ramos, R., Okuno, H., Dijon, J., Asenov, A. (2017) The Impact of Vacancy Defects on CNT Interconnects: From Statistical Atomistic Study to Circuit Simulations. (doi: 10.23919/SISPAD.2017.8085288)

Wang, X., Georgiev, V. P., Adamu-Lema, F., Gerrer, L., Amoroso, S. M., Asenov, A. (2017) TCAD-based design technology co-optimization for variability in nanoscale SOI FinFETs. Pan Stanford

Al-Ameri, T., Georgiev, V.P., Adamu-Lema, F., Asenov, A. (2017) Simulation study of vertically stacked lateral Si nanowires transistors for 5 nm CMOS applications. IEEE Journal of the Electron Devices Society, 5, pp. 466-472. (doi: 10.1109/JEDS.2017.2752465)

Georgiev, V. P., Mirza, M. M., Dochioiu, A.-I., Lema, F.-A., Amoroso, S. M., Towie, E., Riddet, C., MacLaren, D. A., Asenov, A., Paul, D. J. (2017) Experimental and simulation study of 1D silicon nanowire transistors using heavily doped channels. IEEE Transactions on Nanotechnology, 16, pp. 727-735. (doi: 10.1109/TNANO.2017.2665691)

Berrada, S., Lee, J., Georgiev, V., Asenov, A. (2017) Effect of the Quantum Mechanical Tunneling on the Leakage Current in Ultra-scaled Si Nanowire Transistors.

Medina-Bailon, C., Sadi, T., Sampedro, C., Padilla, J.L., Godoy, A., Donetti, L., Georgiev, V., Gamiz, F., Asenov, A. (2017) Assessment of Gate Leakage Mechanism Utilizing Multi-Subband Ensemble Monte Carlo. (doi: 10.1109/ULIS.2017.7962585)

Al-Ameri, T. M. A., Asenov, A. (2017) Vertically Stacked Lateral Si80Ge20 Nanowires Transistors for 5 nm CMOS Applications. (doi: 10.1109/ULIS.2017.7962612)

Zhang, Z., Zhang, Z., Guo, S., Wang, R., Wang, X., Cheng, B., Asenov, A., Huang, R. (2017) Comparative Study on RTN Amplitude in Planar and FinFET Devices. (doi: 10.1109/EDTM.2017.7947530)

Duan, M., Zhang, J. F., Zhang, J. C., Zhang, W., Ji, Z., Benbakhti, B., Zheng, X.F., Hao, Y., Vigar, D., Adamu-Lema, F., Chandra, V., Aitken, R., Kaczer, B., Groeseneken, G., Asenov, A. (2017) Interaction Between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction. (doi: 10.1109/IRPS.2017.7936419)

Duan, M., Zhang, J. F., Ji, Z., Zhang, W. D., Kaczer, B., Asenov, A. (2017) Key issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs. IEEE Transactions on Electron Devices, 64, pp. 2478-2484. (doi: 10.1109/TED.2017.2691008)

Al-Ameri, T., Georgiev, V. P., Sadi, T., Wang, Y., Adamu-Lema, F., Wang, X., Amoroso, S. M., Towie, E., Brown, A., Asenov, A. (2017) Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit. Solid-State Electronics, 129, pp. 73-80. (doi: 10.1016/j.sse.2016.12.015)

Lee, J., Sadi, T., Georgiev, V. P., Todri-Sanial, A., Asenov, A. (2017) A Hierarchical Model for CNT and Cu-CNT Composite Interconnects: From Density Functional Theory to Circuit-Level Simulations.

Jiang, X., Guo, S., Wang, R., Wang, Y., Wang, X., Cheng, B., Asenov, A., Huang, R. (2017) New Insights into the Near-Threshold Design in Nanoscale FinFET Technology for Sub-0.2V Applications. (doi: 10.1109/IEDM.2016.7838499)

Zhang, Z., Zhang, Z., Wang, R., Jiang, X., Guo, S., Wang, Y., Wang, X., Cheng, B., Asenov, A., Huang, R. (2017) New approach for understanding “random device physics” from channel percolation perspectives: Statistical simulations, key factors and experimental results. (doi: 10.1109/IEDM.2016.7838366)

Sadi, T., Wang, L., Asenov, A. (2017) Multi-Scale Electrothermal Simulation and Modelling of Resistive Random Access Memory Devices. (doi: 10.1109/PATMOS.2016.7833422)

Liang, J., Ramos, R., Dijon, J., Okuno, H., Kalita, D., Renaud, D., Lee, J., Georgiev, V.P., Berrada, S., Sadi, T., Asenov, A., Uhlig, B., Lilienthal, K., Dhavamani, A., Konemann, F., Gotsmann, B., Goncalves, G., Chen, B., Teo, K., Pandey, R. R., Todri-Sanial, A. (2017) A Physics-based Investigation of Pt-salt Doped Carbon Nanotubes for Local Interconnects. (doi: 10.1109/IEDM.2017.8268502)

Todri-Sanial, A., Ramos, R., Okuno, H., Dijon, J., Dhavamani, A., Widlicenus, M., Lilienthal, K., Uhlig, B., Sadi, T., Georgiev, V., Asenov, A., Amoroso, S., Pender, A., Brown, A., Millar, C., Motzfeld, F., Gotsmann, B., Liang, J., Goncalves, G., Rupesinghe, N., Teo, K. (2017) A survey of carbon nanotube interconnects for energy efficient integrated circuits. IEEE Circuits and Systems Magazine, 17, pp. 47-62. (doi: 10.1109/MCAS.2017.2689538)

Adamu-Lema, F., Duan, M., Berrada, S., Lee, J., Al-Ameri, T., Georgiev, V., Asenov, A. (2017) Modelling and simulation of advanced semiconductor devices. ECS Transactions, 80, pp. 33-42. (doi: 10.1149/08004.0033ecst)

Medina-Bailon, C., Sampedro, C., Padilla, J.L., Godoy, A., Donetti, L., Gamiz, F., Sadi, T., Georgiev, V., Asenov, A. (2017) Multi-subband Ensemble Monte Carlo Study of Tunneling Leakage mechanisms. (doi: 10.23919/SISPAD.2017.8085319)

Al-Ameri, T., Georgiev, V.P., Adamu-Lema, F., Asenov, A. (2017) Position-Dependent Performance in 5 nm Vertically Stacked Lateral Si Nanowires Transistors.

Al-Ameri, T., Georgiev, V.P., Adamu-Lema, F., Asenov, A. (2017) Variability-Aware Simulations of 5 nm Vertically Stacked Lateral Si Nanowires Transistors.

Georgiev, V. P., Mirza, M. M., Dochioiu, A.-I., Lema, F.-A., Amoroso, S. M., Towie, E., Riddet, C., MacLaren, D. A., Asenov, A., Paul, D. J. (2016) Experimental and Simulation Study of a High Current 1D Silicon Nanowire Transistor Using Heavily Doped Channels. (doi: 10.1109/NMDC.2016.7777084)

Al-Ameri, T., Georgiev, V.P., Lema, A., Sadi, T., Towie, E., Riddet, C., Alexander, C., Asenov, A. (2016) Performance of Vertically Stacked Horizontal Si Nanowires Transistors: A 3D Monte Carlo / 2D Poisson Schrodinger Simulation Study. (doi: 10.1109/NMDC.2016.7777117)

Sadi, T., Towie, E., Nedjalkov, M., Riddet, C., Alexander, C., Wang, L., Georgiev, V., Brown, A., Millar, C., Asenov, A. (2016) One-Dimensional Multi-Subband Monte Carlo Simulation of Charge Transport in Si Nanowire Transistors. (doi: 10.1109/SISPAD.2016.7605139)

Al-Ameri, T., Georgiev, V. P., Lema, F.-A., Sadi, T., Wang, X., Towie, E., Riddet, C., Alexander, C., Asenov, A. (2016) Impact of Strain on the Performance of Si Nanowires Transistors at the Scaling Limit: A 3D Monte Carlo/2D Poisson Schrodinger Simulation Study. (doi: 10.1109/SISPAD.2016.7605185)

Sadi, T., Wang, L., Asenov, A. (2016) Advanced Simulation of Resistance Switching in Si-rich Silica RRAM Devices. (doi: 10.1109/SNW.2016.7578049)

Duan, M., Zhang, J. F., Ji, Z., Zhang, W. D., Vigar, D., Asenov, A., Gerrer, L., Chandra, V., Aitken, R., Kaczer, B. (2016) Insight into electron traps and their energy distribution under positive bias temperature stress and hot carrier aging. IEEE Transactions on Electron Devices, 63, pp. 3642-3648. (doi: 10.1109/TED.2016.2590946)

Zhang, Z., Zhang, Z., Guo, S., Wang, R., Wang, X., Cheng, B., Asenov, A., Huang, R. (2016) Investigation on the Amplitude of Random Telegraph Noise (RTN) in Nanoscale MOSFETs: Scaling Limit of “Hole in the Inversion Layer” Model. (doi: 10.1109/ICSICT.2016.7998949)

Jiang, X., Guo, S., Wang, R., Wang, X., Cheng, B., Asenov, A., Huang, R. (2016) A device-level characterization approach to quantify the impacts of different random variation sources in FinFET technology. IEEE Electron Device Letters, 37, pp. 962-965. (doi: 10.1109/LED.2016.2581878)

Sadi, T., Wang, L., Gao, D., Mehonic, A., Montesi, L., Buckwell, M., Kenyon, A., Shluger, A., Asenov, A. (2016) Advanced physical modeling of SiOx resistive random access memories. (doi: 10.1109/SISPAD.2016.7605169)

Al-Ameri, T., Georgiev, V., Adamu-Lema, F., Asenov, A. (2016) Influence of Quantum Confinement Effects and Device Electrostatic Driven Performance in Ultra-Scaled SixGe1-x Nanowire Transistors. (doi: 10.1109/ULIS.2016.7440096)

Asenov, A., Wang, Y., Cheng, B., Wang, X., Asenov, P., Al-Ameri, T., Georgiev, V.P. (2016) Nanowire Transistor Solutions for 5NM and Beyond. (doi: 10.1109/ISQED.2016.7479212)

Wang, L., Sadi, T., Brown, A.R., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C., Asenov, A. (2016) Simulation Analysis of the Electro-Thermal Performance of SOI FinFETs. (doi: 10.1109/ULIS.2016.7440051)

Georgiev, V.P., Ali, T., Wang, Y., Gerrer, L., Amoroso, S.M., Asenov, A. (2015) Influence of Quantum Confinement Effects over Device Performance in Circular and Elliptical Silicon Nanowire Transistors. (doi: 10.1109/IWCE.2015.7301960)

Kivisaari, P., Sadi, T., Li, J., Georgiev, V., Oksanen, J., Rinke, P., Tulkki, J. (2015) Bipolar Monte Carlo Simulation of Hot Carriers In III-N LEDs. (doi: 10.1109/SISPAD.2015.7292342)

Georgiev, V. P., Amoroso, S. M., Gerrer, L., Adamu-Lema, F., Asenov, A. (2015) Interplay between quantum mechanical effects and a discrete trap position in ultrascaled FinFETs. (doi: 10.1109/SISPAD.2015.7292305)

Donetti, L., Sampedro, C., Gamiz, F., Godoy, A., Garcıa-Ruız, F. J., Towie, E., Georgiev, V., Amoroso, S. M., Riddet, C., Asenov, A. (2015) Multi-Subband Ensemble Monte Carlo Simulation of Si Nanowire MOSFETs. (doi: 10.1109/SISPAD.2015.7292332)

Wang, X., Cheng, B., Reid, D., Pender, A., Asenov, P., Millar, C., Asenov, A. (2015) FinFET centric variability-aware compact model extraction and generation technology supporting DTCO. IEEE Transactions on Electron Devices, 62, pp. 3139-3146. (doi: 10.1109/TED.2015.2463073)

Ding, J., Reid, D., Asenov, P., Millar, C., Asenov, A. (2015) Influence of transistors with BTI-induced aging on SRAM write performance. IEEE Transactions on Electron Devices, 62, pp. 3133-3138. (doi: 10.1109/TED.2015.2462319)

Wang, Y., Al-Ameri, T., Wang, X., Georgiev, V. P., Towie, E., Amoroso, S. M., Brown, A. R., Cheng, B., Reid, D., Riddet, C., Shifren, L., Sinha, S., Yeric, G., Aitken, R., Liu, X., Kang, J., Asenov, A. (2015) Simulation study of the impact of quantum confinement on the electrostatically driven oerformance of n-type nanowire transistors. IEEE Transactions on Electron Devices, 62, pp. 3229-3236. (doi: 10.1109/TED.2015.2470235)

Gerrer, L., Georgiev, V., Amoroso, S.M., Towie, E., Asenov, A. (2015) Comparison of Si <100> and <110> crystal orientation nanowire transistor reliability using Poisson–Schrödinger and classical simulations. Microelectronics Reliability, 55, pp. 1307-1312. (doi: 10.1016/j.microrel.2015.06.094)

Wang, L., Brown, A. R., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C., Asenov, A. (2015) Impact of self-heating on the statistical variability in bulk and SOI FinFETs. IEEE Transactions on Electron Devices, 62, pp. 2106-2112. (doi: 10.1109/TED.2015.2436351)

Amoroso, S. M., Adamu-Lema, F., Brown, A. R., Asenov, A. (2015) A mobility correction approach for overcoming artifacts in atomistic drift-diffusion simulation of nano-MOSFETs. IEEE Transactions on Electron Devices, 62, pp. 2056-2060. (doi: 10.1109/TED.2015.2419815)

Jiang, X., Wang, J., Wang, X., Wang, R., Cheng, B., Asenov, A., Wei, L., Huang, R. (2015) New assessment methodology based on energy–delay–yield cooptimization for nanoscale CMOS technology. IEEE Transactions on Electron Devices, 62, pp. 1746-1753. (doi: 10.1109/TED.2015.2396575)

Asenov, A., Cheng, B., Wang, X., Brown, A. R., Millar, C., Alexander, C., Amoroso, S. M., Kuang, J. B., Nassif, S. R. (2015) Variability aware simulation based design- technology cooptimization (DTCO) flow in 14 nm FinFET/SRAM cooptimization. IEEE Transactions on Electron Devices, 62, pp. 1682-1690. (doi: 10.1109/TED.2014.2363117)

Georgiev, V. P., Amoroso, S. M., Ali, T. M., Vila-Nadal, L., Busche, C., Cronin, L., Asenov, A. (2015) Comparison between bulk and FDSOI POM flash cell: a multiscale simulation study. IEEE Transactions on Electron Devices, 62, pp. 680-684. (doi: 10.1109/TED.2014.2378378)

Wang, L., Sadi, T., Nedjalkov, M., Brown, A.R., Alexander, C., Cheng, B., Millar, C., Asenov, A. (2015) An Advanced Electro-Thermal Simulation Methodology for Nanoscale Device. (doi: 10.1109/IWCE.2015.7301989)

Adamu-Lema, F., Wang, X., Amoroso, S.M., Gerrer, L., Millar, C., Asenov, A. (2015) Comprehensive 'Atomistic' Simulation of Statistical Variability and Reliability in 14 nm Generation FinFETs.

Al-Ameri, T., Wang, Y., Georgiev, V.P., Adamu-Lema, F., Wang, X., Asenov, A. (2015) Correlation between Gate Length, Geometry and Electrostatic Driven Performance in Ultra-Scaled Silicon Nanowire Transistors. (doi: 10.1109/NMDC.2015.7439240)

Wang, X., Wang, Y., Towie, E., Cheng, B., Liu, X., Asenov, A. (2015) Discrete Dopant Impact on the 7 nm Nanowire Transistor Performance.

Wang, X., Reid, D., Wang, L., Burenkov, A., Millar, C., Lorenz, J., Asenov, A. (2015) Hierarchical Variability-Aware Compact Models of 20nm Bulk CMOS.

Georgiev, V., Asenov, A. (2015) Multi-scale computational framework for evaluating of the performance of molecular based flash cells. Lecture Notes in Computer Science, 8962, pp. 196-203. (doi: 10.1007/978-3-319-15585-2_22)

Sadi, T., Wang, L., Gerrer, L., Asenov, A. (2015) Physical Simulation of Si-Based Resistive Random-Access Memory Devices. (doi: 10.1109/SISPAD.2015.7292340)

Jiang, X., Wang, X., Wang, R., Cheng, B., Asenov, A., Huang, R. (2015) Predictive Compact Modeling of Random Variations in FinFET Technology for 16/14nm Node and Beyond. (doi: 10.1109/IEDM.2015.7409787)

Sadi, T., Wang, L., Gerrer, L., Georgiev, V., Asenov, A. (2015) Self-consistent physical modeling of SiOx-based RRAM structures. (doi: 10.1109/IWCE.2015.7301981)

Wang, J., Xiaobo, J., Wang, X., Wang, R., Cheng, B., Asenov, A., Wei, L., Huang, R. (2015) Variation-Aware Energy-Delay Optimization Method for Device/Circuit Co-Design. (doi: 10.1109/CSTIC.2015.7153331)