Course Catalogue

View Specification Document | Reading List

Power semiconductor technologies are critical to modern power conditioning and delivery systems and to the recent growth in electric vehicles. This course introduces the most important power electronic devices, and how they can be integrated into analogue power systems, so that students both understand power semiconductor fundamentals but can also perform specific analysis and design of devices which are of modern industrial relevance-including diodes, bipolar transistors, thyristors, MOSFETs and IGBTs.

Course will be delivered continuously in the traditional manner at UESTC.

None

None

None

75% Degree Examination

15% in-class tests

10% Presentations based on individual and group research

Reassessments are normally available for all courses, except those which contribute to the Honours classification. For non-Honours courses, students are offered reassessment in all or any of the components of assessment if the satisfactory (threshold) grade for the overall course is not achieved at the first attempt. This is normally grade D3 for undergraduate students and grade C3 for postgraduate students. Exceptionally it may not be possible to offer reassessment of some coursework items, in which case the mark achieved at the first attempt will be counted towards the final course grade. Any such exceptions for this course are described below. 

Exceptions to Reassessment

It is not possible to offer in-class tests outside of the normal timetabled sessions

The aim of this course is to provide students with a knowledge of the fundamental properties of semiconductors which can be used for the control and delivery of electrical power, and an understanding of both historical and current industrially relevant power control devices fabricated from such semiconductors. The course should help students to cultivate their knowledge and understanding to the level that they can carry out scientific research or product development in this field.

By the end of this course students will be able to:

■ explain the factors limiting the ability of semiconductor materials to withstand high voltages and currents, and quantitatively analyse how those limits can be ameliorated by choices of materials and structures;

■ compare and contrast the advantages and disadvantages of power semiconductor devices (including a range of power diodes and rectifiers, bipolar transistors and thyristors, power MOS and IGBTs), evaluating their relative performance in a range of industrial settings;

■ analyse and make design judgements regarding the optimisation of semiconductor devices-both in enhancing beneficial characteristics and reducing effect such as parasitic latch-up;

■ summarise key factors in the development of highly integrable power semiconductor devices (including the use of LDMOS and LIGBT devices, and Bipolar/CMOS/DMOS and REduced SURface Field technologies) and evaluate the properties of circuits constructed using such devices;

■ critique the latest developments in the power semiconductor device field;

■ critically discuss sustainability aspects of power devices, including in use, fabrication and source materials.

Students must submit at least 75% by weight of the components (including examinations) of the course's summative assessment.