Dr Jeremy Watling

telephone: 01413301999
email: Jeremy.Watling@glasgow.ac.uk

Planning & Business Intelligence, Pearce Lodge, University of Glasgow, Glasgow G12 8QQ, G12 8QQ

Import to contacts

Publications

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Number of items: 104.

2013

Samarelli, A. et al. (2013) The thermoelectric properties of Ge/SiGe modulation doped superlattices. Journal of Applied Physics, 113(23), Art. 233704. (doi: 10.1063/1.4811228)

2012

Paul, D. et al. (2012) Si/SiGe nanoscale engineered thermoelectric materials for energy harvesting. In: 12th IEEE Conference on Nanotechnology, Birmingham, UK, 20-23 Aug 2012, (doi: 10.1109/NANO.2012.6322044)

2011

Towie, E., Watling, J. and Barker, J. (2011) Remotely screened electron-impurity scattering model for nanoscale MOSFETs. Semiconductor Science and Technology, 26(5), 055008. (doi: 10.1088/0268-1242/26/5/055008)

Chan, K.H., Benbakhti, B., Riddet, C., Watling, J. and Asenov, A. (2011) Simulation study of the 20nm gate-length implant-free quantum well p-MOSFET. Microelectronic Engineering, 88(4), pp. 362-365. (doi: 10.1016/j.mee.2010.09.025)

Watling, J.R., Riddet, C., Chan, K.H. and Asenov, A. (2011) Simulation of hole-mobility in doped relaxed and strained Ge. Microelectronic Engineering, 88(4), pp. 462-464. (doi: 10.1016/j.mee.2010.11.017)

Watling, J.R. and Paul, D.J. (2011) A study of the impact of dislocations on the thermoelectric properties of quantum wells in the Si/SiGe materials system. Journal of Applied Physics, 110, p. 114508. (doi: 10.1063/1.3665127)

2010

Brown, A., Idris, N., Watling, J. and Asenov, A. (2010) Impact of metal gate granularity on threshold voltage variability: a full-scale 3D statistical simulation study. IEEE Electron Device Letters, 31(11), pp. 1199-1201. (doi: 10.1109/LED.2010.2069080)

Benbakhti, B. et al. (2010) Performance analysis of the new implant-free quantum-well CMOS : DualLogic approach. Solid State Electronics Journal, (Unpublished)

Chan, K.H., Riddet, C., Benbakhti, B., Watling, J. and Asenov, A. (2010) Simulation and Optimization of Implant-Free Quantum Well Germanium p-MOSFET Design. In: European Materials Research Society (EMRS), Spring Meeting, Strasbourg,

Idris, N.M., Brown, A., Watling, J. and Asenov, A. (2010) Simulation Study of Workfunction Variability in MOSFETs with Polycrystalline Metal Gates. In: 11th International Conference on Ultimate Integration Silicon (ULIS), Glasgow, UK,

Riddet, C., Watling, J., Chan, K. and Asenov, A. (2010) Monte Carlo simulation study of the impact of strain and substrate orientation on hole mobility in Germanium. Journal of Physics: Conference Series, 242(1), 012017. (doi: 10.1088/1742-6596/242/1/012017)

Riddet, C., Watling, J., Chan, K. and Asenov, A. (2010) Monte carlo simulation study of the impact of strain and substrate orientation on hole mobility on Geranium. In: 14th International Workshop on Computational Electronics (IWCE), Pisa, Italy, 27-29 Oct 2010, pp. 239-242.

Riddet, C., Watling, J., Chan, K.H., Asenov, A. , De Jaeger, B., Mitard, J. and Meuris, M. (2010) Monte Carlo Simulation Study of Hole Mobility in Germanium MOS Inversion Layers. In: 14 International Workshop on Computational Electronics, Pisa, Italy, 26-29 October 2010, pp. 239-242. (doi: 10.1109/IWCE.2010.5677972)

Thomas, S.M., Prest, M.J., Whall, T.E., Beer, C.S., Leadley, D.R., Parker, E.H.C., Watling, J., Lander, R.J.P. and Vellianitis, G. (2010) Low temperature effective mobility measurements and modelling of high-k gated Si n-MOS and p-MOS devices. In: 11th International Conference on Ultimate Integration Silicon (ULIS), Glasgow, UK, 2010,

Watling, J., Riddet, C., Chan, K. and Asenov, A. (2010) Simulation of hole-mobility in doped relaxed and strained Ge layers. In: European Materials Research Society (EMRS), Spring Meeting, Strasbourg, 2010,

Watling, J., Riddet, C., Chan, K. and Asenov, A. (2010) Simulation of hole-mobility in doped relaxed and strained Ge layers. Journal of Applied Physics, 108(9), 093715.

2009

Thomas, S.M., Whall, T.E., Parker, E.H.C., Leadley, D.R., Lander, R.J.P., Vellianitis, G. and Watling, J.R. (2009) Improved effective mobility extraction in MOSFETs. Solid-State Electronics, 53(12), pp. 1252-1256. (doi: 10.1016/j.sse.2009.09.014)

2008

Watling, J. R., Brown, A. R., Ferrari, G., Barker, J. R., Bersuker, G., Zeitzoff, P. and Asenov, A. (2008) Impact of high-kappa gate stacks on transport and variability in nano-CMOS devices. Journal of Computational and Theoretical Nanoscience, 5(6), pp. 1072-1088.

Barker, J. R., Towie, E. and Watling, J. R. (2008) The influence of polarisation and image charges on Electron-Impurity Scattering in High Degeneracy, Nanometre Scale Silicon wrap-round gate MOSFETs - art. no. 012009. In: Goodnick, S.M. and Ferry, D.K. (eds.) International Symposium on Advanced Nanodevices and Nanotechnology. Series: Journal of Physics Conference Series (109). IOP Publishing: Bristol, p. 12009. ISBN 1742-6588

2007

Ferrari, G., Watling, J.R., Roy, S., Barker, J.R. and Asenov, A. (2007) Beyond SiO2 technology: simulation of the impact of high-κ dielectrics on mobility. Journal of Non-Crystalline Solids, 353(5-7), pp. 630-634. (doi: 10.1016/j.jnoncrysol.2006.10.044)

Ferrari, G., Watling, J.R., Roy, S., Barker, J.R. and Asenov, A. (2007) Beyond SiO2 technology: Simulation of the impact of high-kappa dielectrics on mobility. Journal of Non-Crystalline Solids, 353, pp. 630-634. (doi: 10.1016/j.jnoncrysol.2006.10.004)

Riddet, C., Brown, A.R., Alexander, C.L., Watling, J.R., Roy, S. and Asenov, A. (2007) 3-D Monte Carlo simulation of the impact of quantum confinement scattering on the magnitude of current fluctuations in double gate MOSFETs. IEEE Transactions on Nanotechnology, 6, pp. 48-55. (doi: 10.1109/TNANO.2006.886739)

2006

Barker, J.R. and Watling, J.R. (2006) Atomistic scattering close to an interface. Journal of Physics: Conference Series, 38(1), pp. 204-207. (doi: 10.1088/1742-6596/38/1/049)

Barker, J.R., Watling, J.R. and Ferrari, G. (2006) SO phonon scattering rates at the Si-HFO2 interface in Si MOSFETs. Journal of Physics: Conference Series, 38(1), pp. 184-187. (doi: 10.1088/1742-6596/38/1/044)

Barker, J. and Watling, J. (2006) Model plasma dispersion functions for SO phonon scattering in Monte Carlo simulations of high-k dielectric MOSFETs. In: 11th International Workshop on Computational Electronics, IWCE 2006, Vienna, Austria, pp. 99-100.

Brown, A., Watling, J. and Asenov, A. (2006) Intrinsic parameter fluctuations due to random grain orientation in the high-k stacks. In: 11th International Workshop on Computational Electronics, IWCE 2006, Vienna, Austria, p. 49.

Ferrari, G., Watling, J., Roy, S., Barker, J. and Asenov, A. (2006) Beyond SiO2 technology: The impact of high-k dielectrics. In: 6th symposium SiO2 , advanced dielectrics and related devices : SiO2006, Palermo, Italy,

Ferrari, G., Watling, J., Roy, S., Barker, J., Zeitzoff, P., Bersuker, G. and Asenov, A. (2006) Monte Carlo study of mobility in Si devices with HfO2 based oxides. In: E-MRS IUMRS ICEM 2006, Nice, France, Symposium.

Ferrari, G., Watling, J., Roy, S., Barker, J., Zeitzoff, P., Bersuker, G. and Asenov, A. (2006) Monte Carlo study of mobility in Si devices with HfO2-based oxides. Materials Science in Semiconductor Processing, 9, pp. 995-999. (doi: 10.1016/j.mssp.2006.10.035)

Ferrari, G., Watling, J., Roy, S., Barker, J., Zeitzoff, P., Bersuker, G. and Asenov, A. (2006) On the impact of high-k gate stacks on mobility: a Monte Carlo study including coupled SO phonon-plasmon scattering. In: 11th International Workshop on Computational Electronics, IWCE 2006, Vienna, Austria, p. 111.

Watling, J. (2006) Non-equilibrium dielectric response of high-k gate stacks in Si MOSFETs: application to SO interface phonon scattering. Journal of Physics: Conference Series, 35(1), pp. 255-268. (doi: 10.1088/1742-6596/35/1/023)

2005

Alexander, C., Brown, A.R., Watling, J.R. and Asenov, A. (2005) Impact of scattering in 'atomistic' device simulations. Solid-State Electronics, 49, pp. 733-739. (doi: 10.1016/j.sse.2004.10.012)

Alexander, C., Brown, A., Watling, J. and Asenov, A. (2005) Impact of single charge trapping in nano-MOSFETs - Electrostatics versus transport effects. IEEE Transactions on Nanotechnology, 4, pp. 339-344. (doi: 10.1109/TNANO.2005.846929)

Barker, J. and Watling, J. (2005) Non-equlibrium dielectric response of high-k stacks in Si MOSFETs: application to SO interface phonon scattering. In: 3rd International Workshop on Progress in non-equilibrium Green functions, Kiel, Germany,

Barker, J., Watling, J., Brown, A., Roy, S., Zeitzoff, P., Bersuker, G. and Asenov, A. (2005) Monte Carlo study of coupled SO phonon-plasmon scattering in Si MOSFETs with high k dielectric gate stacks: hot electron and disorder effects. In: 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors - HCIS, Chicago, USA,

Brown, A., Watling, J., Asenov, A., Bersuker, G. and Zeitzoff, P. (2005) Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-kappa gate stack materials. In: SISPAD: 2005 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, TOKYO, pp. 27-30.

Riddet, C., Brown, A., Alexander, C., Watling, J., Roy, S. and Asenov, A. (2005) Impact of quantum confinement scattering on the magnitude of current fluctuations in double gate MOSFETs. In: Silicon Nanoelectronics Workshop 2005, Kyoto, Japan,

Watling, J. (2005) Simulations of Sub-100 nm Strained Si MOSFETs with High-k Gate Stacks. Computational Electronics, 3(39541), pp. 171-176.

Watling, J., Asenov, A., Barker, J. and Roy, S. (2005) The impact of the interfacial layer and structure of the k dielectric (HfO2) on device performance. In: Advanced Gate Stack Engineering Conference, Texas, USA,

Watling, J., Asenov, A., Barker, J. and Roy, S. (2005) Transport in the presence of high-k dielectrics. In: Material Modelling International Workshop, London, UK,

Watling, J., Brown, A., Alexander, C., Ferrari, G., Barker, J., Bersuker, G., Zeitzoff, P. and Asenov, A. (2005) Electrostatic and transport variations in nano CMOS devices due to variations in high-k oxides. In: 2nd International Workshop on Advanced Gate Stack Technology, Texas, USA,

Watling, J., Yang, L., Asenov, A., Barker, J. and Roy, S. (2005) Impact of high-k dielectric HfO2 on the mobility and device performance of sub-100-nm nMOSFETs. IEEE Transactions on Device and Materials Reliability, 5, pp. 103-108. (doi: 10.1109/TDMR.2005.845238)

Yang, L., Watling, J., Barker, J. and Asenov, A. (2005) The impact of soft-optical phonon scattering due to high-kappa dielectrics on the performance of sub-100nm conventional and strained Si n-MOSFETs. In: Physics of Semiconductors AIP Conference Proceedings, Melville, pp. 1497-1498. ISBN 0094-243X

2004

Alexander, C., Brown, A., Watling, J. and Asenov, A. (2004) Impact of single charge trapping in nano-MOSFETs. In: IEEE 2004 Silicon Nanoelectronics Workshop, Honolulu,

Alexander, C., Brown, A., Watling, J. and Asenov, A. (2004) Impact scattering in 'atomistic' device simulation. In: 5th European Workshop on Ultimate Integration of Silicon - ULIS04, Leuven, Belgium,

Alexander, C., Brown, A., Watling, J. and Asenov, A. (2004) Impact scattering on random dopant induced current fluctuations in devanano MOSFETs. In: Simulation of Semiconductor Processes and Devices, Munich, Germany, pp. 223-226.

Alexander, C., Watling, J. and Asenov, A. (2004) Numerical carrier heating when implementing (PM)-M-3 to study small volume variations. Semiconductor Science and Technology, 19, S139-S141. (doi: 10.1088/0268-1242/19/4/049)

Asenov, A., Roy, G., Alexander, C., Brown, A., Watling, J. and Roy, S. (2004) Quantum mechanical and transport effects in resolving discrete charges in nano-CMOS device simulation. In: 4th IEEE Conference on Nanotechnology 2004, Munich, Germany,

Borici, M., Watling, J., Wilkins, R., Yang, L., Barker, J. and Asenov, A. (2004) Interface roughness scattering and its impact on electron transport in relaxed and strained Si n-MOSFETs. Semiconductor Science and Technology, 19, S155-S157. (doi: 10.1088/0268-1242/19/4/054)

Kalna, K., Yang, L., Watling, J. and Asenov, A. (2004) 80nm InGaAs MOSFET compared to equivalent Si transistor. In: 5th European Workshop on Ultimate Integration of Silicon - ULIS04, Leuven, Belgium, pp. 159-162.

Riddet, C., Brown, A., Alexander, C., Watling, J., Roy, S. and Asenov, A. (2004) Scattering from body thickness fluctuations in double gate MOSFETs. An ab initio Monte Carlo simulation study. In: International workshop on Computational Electronics, IWCE-10, West Lafayette, USA, pp. 194-195.

Watling, J.R., Yang, L., Borici, M., Wilkins, R.C.W., Asenov, A., Barker, J.R. and Roy, S. (2004) The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs. Solid-State Electronics, 48, pp. 1337-1346. (doi: 10.1016/j.sse.2004.01.015)

Watling, J., Yang, L., Asenov, A., Barker, J. and Roy, S. (2004) Impact of high-k dielectric HfO2 on the mobility and device performance of sub-100nm n-MOSFETs. In: International workshop on electrical characterization and reliability of high-k devices, Austin, USA,

Watling, J., Yang, L., Barker, J. and Asenov, A. (2004) The impact of high-k dielectrics on the future performance of nano-scale MOSFETs. In: IoP Condensed Matter and Materials Physics Conference CMMP04, Warwick, UK,

Yang, L., Asenov, A., Watling, J., Borici, M., Barker, J., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2004) Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs. Microelectronics Reliability, 44, pp. 1101-1107. (doi: 10.1016/j.microrel.2004.04.003)

Yang, L., Watling, J., Adamu-Lema, F., Asenov, A. and Barker, J. (2004) Scaling study of Si and strained Si n-MOSFETs with different high k gate stacks. In: IEEE International Electron Devices Meeting, San Francisco, USA,

Yang, L., Watling, J., Adamu-Lema, F., Asenov, A. and Barker, J. (2004) Simulations of sub-100nm strained Si MOSFETs with high k gate stacks. In: International workshop on Computational Electronics, IWCE-10, West Lafeyette, USA,

Yang, L., Watling, J., Asenov, A. and Barker, J. (2004) Performance degradation due to soft optical phonon scattering in conventional and strained Si MOSFETs with high-k gate dielectrics. In: 34th European Solid-State Device research Conference, ESSDERC, Leuven, Belgium,

Yang, L., Watling, J., Asenov, A., Barker, J. and Roy, S. (2004) Mobility and device performance in conventional and strained Si MOSFETs with high-k stack. In: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Munich, Germany, pp. 199-202.

Yang, L., Watling, J., Asenov, A., Barker, J. and Roy, S. (2004) Sub-100nm strained Si CMOS : Device performance and circuit behavior. In: 7th International Conference on Solid State and Intergrated Circuit Technology, Beijing, China,

Yang, L., Watling, J., Barker, J. and Asenov, A. (2004) The impact of soft-optical phonon scattering due to high-k dielectrics on the performance of sub-1oonm conventional and strained Si n-MOSFETs. In: 27th International Conference on Physics of Semiconductors, ICPS04, Arizona, USA,

Yang, L., Watling, J., Wilkins, R., Barker, J. and Asenov, A. (2004) Monte-Carlo investigation of interface roughness scattering in relaxed and strained Si n-MOSFETs. In: Condensed Matter and Materials Physcis Conference - CMMP04, Warwick, UK,

Yang, L., Watling, J., Wilkins, R., Barker, J. and Asenov, A. (2004) Reduced interface roughness in sub-100nm strained Si n-MOSFETs - A Monte Carlo simulation study. In: 5th European Workshop on Ultimate Integration of Silicon - ULIS04, Leuven, Belgium, pp. 23-26.

Yang, L., Watling, J. R., Adam-Lema, F., Asenov, A. and Barker, J. R. (2004) Scaling study of Si and strained Si n-MOSFETs with different high-k gate stacks. In: IEEE International Electron Devices Meeting, San Francisco, California, 13-15 December 2004, pp. 597-600. ISBN 0780386841 (doi: 10.1109/IEDM.2004.1419232)

Yang, L., Watling, J. R., Asenov, A., Barken, J. R. and Roy, S. (2004) Sub-100nm strained Si CMOS: device performance and circuit behavior. In: International Conference on Solid-State and Integrated Circuits Technology, Beijing, China, 18-21 October 2004, pp. 983-986. ISBN 078038511X (doi: 10.1109/ICSICT.2004.1436670)

Yang, L., Watling, J., Wilkins, R., Borici, M., Barker, J., Asenov, A. and Roy, S. (2004) Si/SiGe heterostructure parameters for device simulations. Semiconductor Science and Technology, 19, pp. 1174-1182.

2003

Alexander, C., Watling, J. and Asenov, A. (2003) Artificial carrier heating due to the introduction of ab-initio Coulomb scattering in Monte Carlo simulations. In: NPMS-6/SIMD-4 Sixth International Conference on New Phenomena in Mesoscopic Systems, and Fourth International Conference on Surfaces and Interfaces of Mesoscopic Devices, Maui, Hawaii, Maui, Hawaii,

Alexander, C., Watling, J. and Asenov, A. (2003) Mobility variations in ultra-small devices due to discrete device simulation. In: International Workshop on Computational Electronics - IWCE 9, Rome, Italy,

Alexander, C., Watling, J. and Asenov, A. (2003) Small volume mobility variations due to ionised impurity scattering. In: 13th International Conference on Nonequilibrium Carrier Dynamics - HCIS 13, Modena, Italy,

Alexander, C., Watling, J., Brown, A. and Asenov, A. (2003) Artificial carrier heating due to the introduction of ab initio Coulomb scattering in Monte Carlo simulations. Superlattices and Microstructures, 34, pp. 319-326. (doi: 10.1016/j.spmi.2004.03.025)

Asenov, A., Brown, A.R. and Watling, J.R. (2003) Quantum corrections in the simulation of decanano MOSFETs. Solid-State Electronics, 47, pp. 1141-1145. (doi: 10.1016/S0038-1101(03)00030-3)

Borici, M., Watling, J., Wilkins, R. and Barker, J. (2003) Interface roughness scattering and its impact on electrons transport in relaxed and strained Si- n-MOSFETs. In: 13th International Conference on Nonequilibrium Carrier Dynamics - HCIS 13, Modena, Italy,

Watling, J. (2003) Degeneracy and high doping effects in deep sub-micron relaxed and strained SiGe MOSFETs. Journal of Computational Electronics, 2(39540), pp. 475-479.

Watling, J. (2003) Mobility variations in ultra-small devices due to discrete charges. Journal of Computational Electronics, 2(39540), pp. 285-289.

Watling, J. (2003) Simulations of scaled sub-100nm strained Si/SiGe p-channel MOSFETs. Journal of Computational Electronics, 2(39540), pp. 363-368.

Watling, J., Asenov, A., Brown, A., Svizhenko, A. and Anantram, M. (2003) Direct source-to-drain tunneling and its impact on intrinsic parameter fluctuations in nanometre scale double gate MOSFETs. In: Proceedings Modeling and Simulation of Microsystems 2003 - MSM 03, San Francisco, USA,

Yang, L., Asenov, A., Watling, J., Borici, M., Barker, J., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2003) Optimisation of sub 11nm Si/SiGe MODFETs for high linearity applications. In: 14th Workshop on Modeling and Simulation of Electron Devices, Barcelona, Spain, pp. 41-44.

Yang, L., Asenov, A., Watling, J., Borici, M., Barker, J., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2003) Optimisation of sub 11nm Si/SiGe MODFETs for high linearity applications. In: IEEE Conference on Electron devices and solid state circuits, Hong Kong, pp. 331-344.

Yang, L., Watling, J., Borici, M., Wilkins, R., Asenov, A., Barker, J. and Roy, S. (2003) Simulation of scaled sub-100nm strained Si p-channel MOSFETs. In: International Workshop on Computational Electronics - IWCE 9, Rome, Italy,

Yang, L., Asenov, A., Borici, M., Watling, J. R., Barker, J. R., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2003) Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications. In: IEEE Conference on Electron Devices and Solid-State Circuits, Kowloon, Hong Kong, 16-18 December 2003, pp. 331-334. ISBN 0780377494 (doi: 10.1109/EDSSC.2003.1283543)

2002

Brown, A.R., Asenov, A. and Watling, J.R. (2002) Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter. IEEE Transactions on Nanotechnology, 1(4), pp. 195-200. (doi: 10.1109/TNANO.2002.807392)

Millar, C., Asenov, A. and Watling, J.R. (2002) Excessive over-relaxation method for multigrid poisson solvers. Journal of Computational Electronics, 1(3), pp. 341-345. (doi: 10.1023/A:1020791306305)

Brown, A.R., Watling, J.R. and Asenov, A. (2002) A 3-D atomistic study of archetypal double gate MOSFET structures. Journal of Computational Electronics, 1(1-2), pp. 165-169. (doi: 10.1023/A:1020704919992)

Asenov, A., Watling, J. and Brown, A. (2002) The use of quantum potentials for confinement and tunneling in semiconductor devices. In: Modeling and simulation of microsystems ( 5th International conference), San Juan, Puerto Rico,

Barker, J. and Watling, J. (2002) Traversal times and charge confinement for spatially dependent effective masses within semiconductor heterostructures: the quantum potential approach. Microelectronic Engineering, 63, pp. 97-103.

Brown, A., Asenov, A. and Watling, J. (2002) Intrinsic fluctuations in sub 10nm double-gate MOSFETs Introduced by discreteness of charge and matter. In: Proceedings Silicon Nanoelectronics Workshop 2002, Honolulu,

Prest, M.J. et al. (2002) Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 89, pp. 444-448.

Watling, J. (2002) Can the Density Gradient Approach Describe the Source-Drain Tunnelling in Decanano Double-Gate MOSFETs? Journal of Computational Electronics, 1(39479), pp. 289-293.

Watling, J. (2002) Transconductance, carrier mobility and 1/f noise in Si/Si/sub 0.64/Ge/sub 0.36//Si pMOSFETs. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, B89(39508), pp. 444-448.

Watling, J.R., Brown, A.R., Asenov, A., Svizhenko, A. and Anantram, M.P. (2002) Simulation of direct source-to-drain tunnelling using the density gradient formalism: Non-Equilibrium Greens Function calibration. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002), Kobe, Japan, 4-6 September 2002, pp. 267-270. ISBN 4891140275 (doi: 10.1109/SISPAD.2002.1034569)

Watling, J., Brown, A., Asenov, A., Svizhenko, A. and Anatram, M. (2002) Simulation of direct source-to -drain tunneling using density gradient formalism: Non-equlibrium Green's function calibration. In: Proceedings of Simulation of Semiconductor Processes and Devices 2002, Kobe, Japan, pp. 267-270.

Yang, L., Watling, J., Wilkins, R., Asenov, A., Barker, J., Roy, S. and Hackbarth, T. (2002) Scaling study of Si/SiGe MOSFETs for RF applications. In: 10th International Symposium on Electron Devices for Microwave and Optoelectronic Devices ( EDMO 2002), Manchester, UK, pp. 101-106.

Yang, L., Watling, J.R., Wilkins, R.C.W., Asenov, A., Barker, J.R., Roy, S. and Hackbarth, T. (2002) Scaling study of Si/SiGe MODFETs for RF applications. In: 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Manchester, UK, 18-19 November 2002, pp. 101-106. ISBN 0780375300

2001

Barker, J.R. and Watling, J.R. (2001) Simulation of enhanced interface trapping due to carrier dynamics in warped valence bands in SiGe devices. VLSI Design, 13, pp. 453-458.

Barker, J.R., Watling, J.R. and Wilkins, R.C.W. (2001) A fast algorithm for the study of wave-packet scattering at disordered interfaces. VLSI Design, 13, pp. 199-204.

Palmer, M. et al. (2001) Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers. Applied Physics Letters, 78, pp. 1424-1426.

Palmer, M. et al. (2001) Enhanced velocity overshoot and transconductance in Si/SiGe/Si pMOSFETs - predictions for deep submicron devices. In: Proceeding ESSDERC 2001 - Edition Frontiers, Nuremberg, Germany, pp. 199-202.

Straube, U.N., Evans, A.G.R., Braithwaite, G., Kaya, S., Watling, J. and Asenov, A. (2001) On the mobility extraction for HMOSFETs. Solid-State Electronics, 45, pp. 527-529.

Watling, J.R., Zhao, Y.P., Asenov, A. and Barker, J.R. (2001) Non-equilibrium hole transport in deep sub-micron well-tempered Si p-MOSFETs. VLSI Design, 13, pp. 169-173.

Watling, J., Brown, A., Asenov, A. and Ferry, D. (2001) Quantum corrections in 3-D drift diffusion simulation of decanano MOSFETs using an effective potential. In: Simulation of semiconductor processes and devices, Vienna, pp. 81-85.

2000

Watling, J.R., Barker, J.R. and Asenov, A. (2000) Soft sphere model for electron correlation and scattering in the atomistic modelling of semiconductor devices. In: International Workshop on Computational Electronics, Glasgow, UK, 22-25 May 2000, pp. 159-160. ISBN 0852617046 (doi: 10.1109/IWCE.2000.869974)

Watling, J.R., Zhao, Y.P., Asenov, A. and Barker, J.R. (2000) Nonequilibrium hole transport in deep sub-micron well-tempered Si p-MOSFETs. In: 7th International Workshop on Computational Electronics, Glasgow, UK, 22-25 May 2000, pp. 66-67. ISBN 0852617046 (doi: 10.1109/IWCE.2000.869925)

Zhao, Y.P. et al. (2000) Indication of Non-equilibrium Transport in SiGe p-MOSFETs. In: 30th European Solid-State Device Research Conference, Cork, Ireland, 11-13 September 2000, pp. 224-227. ISBN 2863322486

1998

Watling, J.R., Asenov, A. and Barker, J.R. (1998) Efficient hole transport model in warped bands for use in the simulation of Si/SiGe MOSFETs. In: International Workshop on Computational Electronics, Osaka, Japan, 19-21 October 1998, pp. 96-99. ISBN 0780343697 (doi: 10.1109/IWCE.1998.742719)

This list was generated on Sat Apr 13 12:42:23 2024 BST.
Number of items: 104.

Articles

Samarelli, A. et al. (2013) The thermoelectric properties of Ge/SiGe modulation doped superlattices. Journal of Applied Physics, 113(23), Art. 233704. (doi: 10.1063/1.4811228)

Towie, E., Watling, J. and Barker, J. (2011) Remotely screened electron-impurity scattering model for nanoscale MOSFETs. Semiconductor Science and Technology, 26(5), 055008. (doi: 10.1088/0268-1242/26/5/055008)

Chan, K.H., Benbakhti, B., Riddet, C., Watling, J. and Asenov, A. (2011) Simulation study of the 20nm gate-length implant-free quantum well p-MOSFET. Microelectronic Engineering, 88(4), pp. 362-365. (doi: 10.1016/j.mee.2010.09.025)

Watling, J.R., Riddet, C., Chan, K.H. and Asenov, A. (2011) Simulation of hole-mobility in doped relaxed and strained Ge. Microelectronic Engineering, 88(4), pp. 462-464. (doi: 10.1016/j.mee.2010.11.017)

Watling, J.R. and Paul, D.J. (2011) A study of the impact of dislocations on the thermoelectric properties of quantum wells in the Si/SiGe materials system. Journal of Applied Physics, 110, p. 114508. (doi: 10.1063/1.3665127)

Brown, A., Idris, N., Watling, J. and Asenov, A. (2010) Impact of metal gate granularity on threshold voltage variability: a full-scale 3D statistical simulation study. IEEE Electron Device Letters, 31(11), pp. 1199-1201. (doi: 10.1109/LED.2010.2069080)

Benbakhti, B. et al. (2010) Performance analysis of the new implant-free quantum-well CMOS : DualLogic approach. Solid State Electronics Journal, (Unpublished)

Riddet, C., Watling, J., Chan, K. and Asenov, A. (2010) Monte Carlo simulation study of the impact of strain and substrate orientation on hole mobility in Germanium. Journal of Physics: Conference Series, 242(1), 012017. (doi: 10.1088/1742-6596/242/1/012017)

Watling, J., Riddet, C., Chan, K. and Asenov, A. (2010) Simulation of hole-mobility in doped relaxed and strained Ge layers. Journal of Applied Physics, 108(9), 093715.

Thomas, S.M., Whall, T.E., Parker, E.H.C., Leadley, D.R., Lander, R.J.P., Vellianitis, G. and Watling, J.R. (2009) Improved effective mobility extraction in MOSFETs. Solid-State Electronics, 53(12), pp. 1252-1256. (doi: 10.1016/j.sse.2009.09.014)

Watling, J. R., Brown, A. R., Ferrari, G., Barker, J. R., Bersuker, G., Zeitzoff, P. and Asenov, A. (2008) Impact of high-kappa gate stacks on transport and variability in nano-CMOS devices. Journal of Computational and Theoretical Nanoscience, 5(6), pp. 1072-1088.

Ferrari, G., Watling, J.R., Roy, S., Barker, J.R. and Asenov, A. (2007) Beyond SiO2 technology: simulation of the impact of high-κ dielectrics on mobility. Journal of Non-Crystalline Solids, 353(5-7), pp. 630-634. (doi: 10.1016/j.jnoncrysol.2006.10.044)

Ferrari, G., Watling, J.R., Roy, S., Barker, J.R. and Asenov, A. (2007) Beyond SiO2 technology: Simulation of the impact of high-kappa dielectrics on mobility. Journal of Non-Crystalline Solids, 353, pp. 630-634. (doi: 10.1016/j.jnoncrysol.2006.10.004)

Riddet, C., Brown, A.R., Alexander, C.L., Watling, J.R., Roy, S. and Asenov, A. (2007) 3-D Monte Carlo simulation of the impact of quantum confinement scattering on the magnitude of current fluctuations in double gate MOSFETs. IEEE Transactions on Nanotechnology, 6, pp. 48-55. (doi: 10.1109/TNANO.2006.886739)

Barker, J.R. and Watling, J.R. (2006) Atomistic scattering close to an interface. Journal of Physics: Conference Series, 38(1), pp. 204-207. (doi: 10.1088/1742-6596/38/1/049)

Barker, J.R., Watling, J.R. and Ferrari, G. (2006) SO phonon scattering rates at the Si-HFO2 interface in Si MOSFETs. Journal of Physics: Conference Series, 38(1), pp. 184-187. (doi: 10.1088/1742-6596/38/1/044)

Ferrari, G., Watling, J., Roy, S., Barker, J., Zeitzoff, P., Bersuker, G. and Asenov, A. (2006) Monte Carlo study of mobility in Si devices with HfO2-based oxides. Materials Science in Semiconductor Processing, 9, pp. 995-999. (doi: 10.1016/j.mssp.2006.10.035)

Watling, J. (2006) Non-equilibrium dielectric response of high-k gate stacks in Si MOSFETs: application to SO interface phonon scattering. Journal of Physics: Conference Series, 35(1), pp. 255-268. (doi: 10.1088/1742-6596/35/1/023)

Alexander, C., Brown, A.R., Watling, J.R. and Asenov, A. (2005) Impact of scattering in 'atomistic' device simulations. Solid-State Electronics, 49, pp. 733-739. (doi: 10.1016/j.sse.2004.10.012)

Alexander, C., Brown, A., Watling, J. and Asenov, A. (2005) Impact of single charge trapping in nano-MOSFETs - Electrostatics versus transport effects. IEEE Transactions on Nanotechnology, 4, pp. 339-344. (doi: 10.1109/TNANO.2005.846929)

Watling, J. (2005) Simulations of Sub-100 nm Strained Si MOSFETs with High-k Gate Stacks. Computational Electronics, 3(39541), pp. 171-176.

Watling, J., Yang, L., Asenov, A., Barker, J. and Roy, S. (2005) Impact of high-k dielectric HfO2 on the mobility and device performance of sub-100-nm nMOSFETs. IEEE Transactions on Device and Materials Reliability, 5, pp. 103-108. (doi: 10.1109/TDMR.2005.845238)

Alexander, C., Watling, J. and Asenov, A. (2004) Numerical carrier heating when implementing (PM)-M-3 to study small volume variations. Semiconductor Science and Technology, 19, S139-S141. (doi: 10.1088/0268-1242/19/4/049)

Borici, M., Watling, J., Wilkins, R., Yang, L., Barker, J. and Asenov, A. (2004) Interface roughness scattering and its impact on electron transport in relaxed and strained Si n-MOSFETs. Semiconductor Science and Technology, 19, S155-S157. (doi: 10.1088/0268-1242/19/4/054)

Watling, J.R., Yang, L., Borici, M., Wilkins, R.C.W., Asenov, A., Barker, J.R. and Roy, S. (2004) The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs. Solid-State Electronics, 48, pp. 1337-1346. (doi: 10.1016/j.sse.2004.01.015)

Yang, L., Asenov, A., Watling, J., Borici, M., Barker, J., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2004) Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs. Microelectronics Reliability, 44, pp. 1101-1107. (doi: 10.1016/j.microrel.2004.04.003)

Yang, L., Watling, J., Wilkins, R., Borici, M., Barker, J., Asenov, A. and Roy, S. (2004) Si/SiGe heterostructure parameters for device simulations. Semiconductor Science and Technology, 19, pp. 1174-1182.

Alexander, C., Watling, J., Brown, A. and Asenov, A. (2003) Artificial carrier heating due to the introduction of ab initio Coulomb scattering in Monte Carlo simulations. Superlattices and Microstructures, 34, pp. 319-326. (doi: 10.1016/j.spmi.2004.03.025)

Asenov, A., Brown, A.R. and Watling, J.R. (2003) Quantum corrections in the simulation of decanano MOSFETs. Solid-State Electronics, 47, pp. 1141-1145. (doi: 10.1016/S0038-1101(03)00030-3)

Watling, J. (2003) Degeneracy and high doping effects in deep sub-micron relaxed and strained SiGe MOSFETs. Journal of Computational Electronics, 2(39540), pp. 475-479.

Watling, J. (2003) Mobility variations in ultra-small devices due to discrete charges. Journal of Computational Electronics, 2(39540), pp. 285-289.

Watling, J. (2003) Simulations of scaled sub-100nm strained Si/SiGe p-channel MOSFETs. Journal of Computational Electronics, 2(39540), pp. 363-368.

Brown, A.R., Asenov, A. and Watling, J.R. (2002) Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter. IEEE Transactions on Nanotechnology, 1(4), pp. 195-200. (doi: 10.1109/TNANO.2002.807392)

Millar, C., Asenov, A. and Watling, J.R. (2002) Excessive over-relaxation method for multigrid poisson solvers. Journal of Computational Electronics, 1(3), pp. 341-345. (doi: 10.1023/A:1020791306305)

Brown, A.R., Watling, J.R. and Asenov, A. (2002) A 3-D atomistic study of archetypal double gate MOSFET structures. Journal of Computational Electronics, 1(1-2), pp. 165-169. (doi: 10.1023/A:1020704919992)

Barker, J. and Watling, J. (2002) Traversal times and charge confinement for spatially dependent effective masses within semiconductor heterostructures: the quantum potential approach. Microelectronic Engineering, 63, pp. 97-103.

Prest, M.J. et al. (2002) Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 89, pp. 444-448.

Watling, J. (2002) Can the Density Gradient Approach Describe the Source-Drain Tunnelling in Decanano Double-Gate MOSFETs? Journal of Computational Electronics, 1(39479), pp. 289-293.

Watling, J. (2002) Transconductance, carrier mobility and 1/f noise in Si/Si/sub 0.64/Ge/sub 0.36//Si pMOSFETs. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, B89(39508), pp. 444-448.

Barker, J.R. and Watling, J.R. (2001) Simulation of enhanced interface trapping due to carrier dynamics in warped valence bands in SiGe devices. VLSI Design, 13, pp. 453-458.

Barker, J.R., Watling, J.R. and Wilkins, R.C.W. (2001) A fast algorithm for the study of wave-packet scattering at disordered interfaces. VLSI Design, 13, pp. 199-204.

Palmer, M. et al. (2001) Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers. Applied Physics Letters, 78, pp. 1424-1426.

Straube, U.N., Evans, A.G.R., Braithwaite, G., Kaya, S., Watling, J. and Asenov, A. (2001) On the mobility extraction for HMOSFETs. Solid-State Electronics, 45, pp. 527-529.

Watling, J.R., Zhao, Y.P., Asenov, A. and Barker, J.R. (2001) Non-equilibrium hole transport in deep sub-micron well-tempered Si p-MOSFETs. VLSI Design, 13, pp. 169-173.

Book Sections

Barker, J. R., Towie, E. and Watling, J. R. (2008) The influence of polarisation and image charges on Electron-Impurity Scattering in High Degeneracy, Nanometre Scale Silicon wrap-round gate MOSFETs - art. no. 012009. In: Goodnick, S.M. and Ferry, D.K. (eds.) International Symposium on Advanced Nanodevices and Nanotechnology. Series: Journal of Physics Conference Series (109). IOP Publishing: Bristol, p. 12009. ISBN 1742-6588

Conference Proceedings

Paul, D. et al. (2012) Si/SiGe nanoscale engineered thermoelectric materials for energy harvesting. In: 12th IEEE Conference on Nanotechnology, Birmingham, UK, 20-23 Aug 2012, (doi: 10.1109/NANO.2012.6322044)

Chan, K.H., Riddet, C., Benbakhti, B., Watling, J. and Asenov, A. (2010) Simulation and Optimization of Implant-Free Quantum Well Germanium p-MOSFET Design. In: European Materials Research Society (EMRS), Spring Meeting, Strasbourg,

Idris, N.M., Brown, A., Watling, J. and Asenov, A. (2010) Simulation Study of Workfunction Variability in MOSFETs with Polycrystalline Metal Gates. In: 11th International Conference on Ultimate Integration Silicon (ULIS), Glasgow, UK,

Riddet, C., Watling, J., Chan, K. and Asenov, A. (2010) Monte carlo simulation study of the impact of strain and substrate orientation on hole mobility on Geranium. In: 14th International Workshop on Computational Electronics (IWCE), Pisa, Italy, 27-29 Oct 2010, pp. 239-242.

Riddet, C., Watling, J., Chan, K.H., Asenov, A. , De Jaeger, B., Mitard, J. and Meuris, M. (2010) Monte Carlo Simulation Study of Hole Mobility in Germanium MOS Inversion Layers. In: 14 International Workshop on Computational Electronics, Pisa, Italy, 26-29 October 2010, pp. 239-242. (doi: 10.1109/IWCE.2010.5677972)

Thomas, S.M., Prest, M.J., Whall, T.E., Beer, C.S., Leadley, D.R., Parker, E.H.C., Watling, J., Lander, R.J.P. and Vellianitis, G. (2010) Low temperature effective mobility measurements and modelling of high-k gated Si n-MOS and p-MOS devices. In: 11th International Conference on Ultimate Integration Silicon (ULIS), Glasgow, UK, 2010,

Watling, J., Riddet, C., Chan, K. and Asenov, A. (2010) Simulation of hole-mobility in doped relaxed and strained Ge layers. In: European Materials Research Society (EMRS), Spring Meeting, Strasbourg, 2010,

Barker, J. and Watling, J. (2006) Model plasma dispersion functions for SO phonon scattering in Monte Carlo simulations of high-k dielectric MOSFETs. In: 11th International Workshop on Computational Electronics, IWCE 2006, Vienna, Austria, pp. 99-100.

Brown, A., Watling, J. and Asenov, A. (2006) Intrinsic parameter fluctuations due to random grain orientation in the high-k stacks. In: 11th International Workshop on Computational Electronics, IWCE 2006, Vienna, Austria, p. 49.

Ferrari, G., Watling, J., Roy, S., Barker, J. and Asenov, A. (2006) Beyond SiO2 technology: The impact of high-k dielectrics. In: 6th symposium SiO2 , advanced dielectrics and related devices : SiO2006, Palermo, Italy,

Ferrari, G., Watling, J., Roy, S., Barker, J., Zeitzoff, P., Bersuker, G. and Asenov, A. (2006) Monte Carlo study of mobility in Si devices with HfO2 based oxides. In: E-MRS IUMRS ICEM 2006, Nice, France, Symposium.

Ferrari, G., Watling, J., Roy, S., Barker, J., Zeitzoff, P., Bersuker, G. and Asenov, A. (2006) On the impact of high-k gate stacks on mobility: a Monte Carlo study including coupled SO phonon-plasmon scattering. In: 11th International Workshop on Computational Electronics, IWCE 2006, Vienna, Austria, p. 111.

Barker, J. and Watling, J. (2005) Non-equlibrium dielectric response of high-k stacks in Si MOSFETs: application to SO interface phonon scattering. In: 3rd International Workshop on Progress in non-equilibrium Green functions, Kiel, Germany,

Barker, J., Watling, J., Brown, A., Roy, S., Zeitzoff, P., Bersuker, G. and Asenov, A. (2005) Monte Carlo study of coupled SO phonon-plasmon scattering in Si MOSFETs with high k dielectric gate stacks: hot electron and disorder effects. In: 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors - HCIS, Chicago, USA,

Brown, A., Watling, J., Asenov, A., Bersuker, G. and Zeitzoff, P. (2005) Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-kappa gate stack materials. In: SISPAD: 2005 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, TOKYO, pp. 27-30.

Riddet, C., Brown, A., Alexander, C., Watling, J., Roy, S. and Asenov, A. (2005) Impact of quantum confinement scattering on the magnitude of current fluctuations in double gate MOSFETs. In: Silicon Nanoelectronics Workshop 2005, Kyoto, Japan,

Watling, J., Asenov, A., Barker, J. and Roy, S. (2005) The impact of the interfacial layer and structure of the k dielectric (HfO2) on device performance. In: Advanced Gate Stack Engineering Conference, Texas, USA,

Watling, J., Asenov, A., Barker, J. and Roy, S. (2005) Transport in the presence of high-k dielectrics. In: Material Modelling International Workshop, London, UK,

Watling, J., Brown, A., Alexander, C., Ferrari, G., Barker, J., Bersuker, G., Zeitzoff, P. and Asenov, A. (2005) Electrostatic and transport variations in nano CMOS devices due to variations in high-k oxides. In: 2nd International Workshop on Advanced Gate Stack Technology, Texas, USA,

Yang, L., Watling, J., Barker, J. and Asenov, A. (2005) The impact of soft-optical phonon scattering due to high-kappa dielectrics on the performance of sub-100nm conventional and strained Si n-MOSFETs. In: Physics of Semiconductors AIP Conference Proceedings, Melville, pp. 1497-1498. ISBN 0094-243X

Alexander, C., Brown, A., Watling, J. and Asenov, A. (2004) Impact of single charge trapping in nano-MOSFETs. In: IEEE 2004 Silicon Nanoelectronics Workshop, Honolulu,

Alexander, C., Brown, A., Watling, J. and Asenov, A. (2004) Impact scattering in 'atomistic' device simulation. In: 5th European Workshop on Ultimate Integration of Silicon - ULIS04, Leuven, Belgium,

Alexander, C., Brown, A., Watling, J. and Asenov, A. (2004) Impact scattering on random dopant induced current fluctuations in devanano MOSFETs. In: Simulation of Semiconductor Processes and Devices, Munich, Germany, pp. 223-226.

Asenov, A., Roy, G., Alexander, C., Brown, A., Watling, J. and Roy, S. (2004) Quantum mechanical and transport effects in resolving discrete charges in nano-CMOS device simulation. In: 4th IEEE Conference on Nanotechnology 2004, Munich, Germany,

Kalna, K., Yang, L., Watling, J. and Asenov, A. (2004) 80nm InGaAs MOSFET compared to equivalent Si transistor. In: 5th European Workshop on Ultimate Integration of Silicon - ULIS04, Leuven, Belgium, pp. 159-162.

Riddet, C., Brown, A., Alexander, C., Watling, J., Roy, S. and Asenov, A. (2004) Scattering from body thickness fluctuations in double gate MOSFETs. An ab initio Monte Carlo simulation study. In: International workshop on Computational Electronics, IWCE-10, West Lafayette, USA, pp. 194-195.

Watling, J., Yang, L., Asenov, A., Barker, J. and Roy, S. (2004) Impact of high-k dielectric HfO2 on the mobility and device performance of sub-100nm n-MOSFETs. In: International workshop on electrical characterization and reliability of high-k devices, Austin, USA,

Watling, J., Yang, L., Barker, J. and Asenov, A. (2004) The impact of high-k dielectrics on the future performance of nano-scale MOSFETs. In: IoP Condensed Matter and Materials Physics Conference CMMP04, Warwick, UK,

Yang, L., Watling, J., Adamu-Lema, F., Asenov, A. and Barker, J. (2004) Scaling study of Si and strained Si n-MOSFETs with different high k gate stacks. In: IEEE International Electron Devices Meeting, San Francisco, USA,

Yang, L., Watling, J., Adamu-Lema, F., Asenov, A. and Barker, J. (2004) Simulations of sub-100nm strained Si MOSFETs with high k gate stacks. In: International workshop on Computational Electronics, IWCE-10, West Lafeyette, USA,

Yang, L., Watling, J., Asenov, A. and Barker, J. (2004) Performance degradation due to soft optical phonon scattering in conventional and strained Si MOSFETs with high-k gate dielectrics. In: 34th European Solid-State Device research Conference, ESSDERC, Leuven, Belgium,

Yang, L., Watling, J., Asenov, A., Barker, J. and Roy, S. (2004) Mobility and device performance in conventional and strained Si MOSFETs with high-k stack. In: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Munich, Germany, pp. 199-202.

Yang, L., Watling, J., Asenov, A., Barker, J. and Roy, S. (2004) Sub-100nm strained Si CMOS : Device performance and circuit behavior. In: 7th International Conference on Solid State and Intergrated Circuit Technology, Beijing, China,

Yang, L., Watling, J., Barker, J. and Asenov, A. (2004) The impact of soft-optical phonon scattering due to high-k dielectrics on the performance of sub-1oonm conventional and strained Si n-MOSFETs. In: 27th International Conference on Physics of Semiconductors, ICPS04, Arizona, USA,

Yang, L., Watling, J., Wilkins, R., Barker, J. and Asenov, A. (2004) Monte-Carlo investigation of interface roughness scattering in relaxed and strained Si n-MOSFETs. In: Condensed Matter and Materials Physcis Conference - CMMP04, Warwick, UK,

Yang, L., Watling, J., Wilkins, R., Barker, J. and Asenov, A. (2004) Reduced interface roughness in sub-100nm strained Si n-MOSFETs - A Monte Carlo simulation study. In: 5th European Workshop on Ultimate Integration of Silicon - ULIS04, Leuven, Belgium, pp. 23-26.

Yang, L., Watling, J. R., Adam-Lema, F., Asenov, A. and Barker, J. R. (2004) Scaling study of Si and strained Si n-MOSFETs with different high-k gate stacks. In: IEEE International Electron Devices Meeting, San Francisco, California, 13-15 December 2004, pp. 597-600. ISBN 0780386841 (doi: 10.1109/IEDM.2004.1419232)

Yang, L., Watling, J. R., Asenov, A., Barken, J. R. and Roy, S. (2004) Sub-100nm strained Si CMOS: device performance and circuit behavior. In: International Conference on Solid-State and Integrated Circuits Technology, Beijing, China, 18-21 October 2004, pp. 983-986. ISBN 078038511X (doi: 10.1109/ICSICT.2004.1436670)

Alexander, C., Watling, J. and Asenov, A. (2003) Artificial carrier heating due to the introduction of ab-initio Coulomb scattering in Monte Carlo simulations. In: NPMS-6/SIMD-4 Sixth International Conference on New Phenomena in Mesoscopic Systems, and Fourth International Conference on Surfaces and Interfaces of Mesoscopic Devices, Maui, Hawaii, Maui, Hawaii,

Alexander, C., Watling, J. and Asenov, A. (2003) Mobility variations in ultra-small devices due to discrete device simulation. In: International Workshop on Computational Electronics - IWCE 9, Rome, Italy,

Alexander, C., Watling, J. and Asenov, A. (2003) Small volume mobility variations due to ionised impurity scattering. In: 13th International Conference on Nonequilibrium Carrier Dynamics - HCIS 13, Modena, Italy,

Borici, M., Watling, J., Wilkins, R. and Barker, J. (2003) Interface roughness scattering and its impact on electrons transport in relaxed and strained Si- n-MOSFETs. In: 13th International Conference on Nonequilibrium Carrier Dynamics - HCIS 13, Modena, Italy,

Watling, J., Asenov, A., Brown, A., Svizhenko, A. and Anantram, M. (2003) Direct source-to-drain tunneling and its impact on intrinsic parameter fluctuations in nanometre scale double gate MOSFETs. In: Proceedings Modeling and Simulation of Microsystems 2003 - MSM 03, San Francisco, USA,

Yang, L., Asenov, A., Watling, J., Borici, M., Barker, J., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2003) Optimisation of sub 11nm Si/SiGe MODFETs for high linearity applications. In: 14th Workshop on Modeling and Simulation of Electron Devices, Barcelona, Spain, pp. 41-44.

Yang, L., Asenov, A., Watling, J., Borici, M., Barker, J., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2003) Optimisation of sub 11nm Si/SiGe MODFETs for high linearity applications. In: IEEE Conference on Electron devices and solid state circuits, Hong Kong, pp. 331-344.

Yang, L., Watling, J., Borici, M., Wilkins, R., Asenov, A., Barker, J. and Roy, S. (2003) Simulation of scaled sub-100nm strained Si p-channel MOSFETs. In: International Workshop on Computational Electronics - IWCE 9, Rome, Italy,

Yang, L., Asenov, A., Borici, M., Watling, J. R., Barker, J. R., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2003) Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications. In: IEEE Conference on Electron Devices and Solid-State Circuits, Kowloon, Hong Kong, 16-18 December 2003, pp. 331-334. ISBN 0780377494 (doi: 10.1109/EDSSC.2003.1283543)

Asenov, A., Watling, J. and Brown, A. (2002) The use of quantum potentials for confinement and tunneling in semiconductor devices. In: Modeling and simulation of microsystems ( 5th International conference), San Juan, Puerto Rico,

Brown, A., Asenov, A. and Watling, J. (2002) Intrinsic fluctuations in sub 10nm double-gate MOSFETs Introduced by discreteness of charge and matter. In: Proceedings Silicon Nanoelectronics Workshop 2002, Honolulu,

Watling, J.R., Brown, A.R., Asenov, A., Svizhenko, A. and Anantram, M.P. (2002) Simulation of direct source-to-drain tunnelling using the density gradient formalism: Non-Equilibrium Greens Function calibration. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002), Kobe, Japan, 4-6 September 2002, pp. 267-270. ISBN 4891140275 (doi: 10.1109/SISPAD.2002.1034569)

Watling, J., Brown, A., Asenov, A., Svizhenko, A. and Anatram, M. (2002) Simulation of direct source-to -drain tunneling using density gradient formalism: Non-equlibrium Green's function calibration. In: Proceedings of Simulation of Semiconductor Processes and Devices 2002, Kobe, Japan, pp. 267-270.

Yang, L., Watling, J., Wilkins, R., Asenov, A., Barker, J., Roy, S. and Hackbarth, T. (2002) Scaling study of Si/SiGe MOSFETs for RF applications. In: 10th International Symposium on Electron Devices for Microwave and Optoelectronic Devices ( EDMO 2002), Manchester, UK, pp. 101-106.

Yang, L., Watling, J.R., Wilkins, R.C.W., Asenov, A., Barker, J.R., Roy, S. and Hackbarth, T. (2002) Scaling study of Si/SiGe MODFETs for RF applications. In: 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Manchester, UK, 18-19 November 2002, pp. 101-106. ISBN 0780375300

Palmer, M. et al. (2001) Enhanced velocity overshoot and transconductance in Si/SiGe/Si pMOSFETs - predictions for deep submicron devices. In: Proceeding ESSDERC 2001 - Edition Frontiers, Nuremberg, Germany, pp. 199-202.

Watling, J., Brown, A., Asenov, A. and Ferry, D. (2001) Quantum corrections in 3-D drift diffusion simulation of decanano MOSFETs using an effective potential. In: Simulation of semiconductor processes and devices, Vienna, pp. 81-85.

Watling, J.R., Barker, J.R. and Asenov, A. (2000) Soft sphere model for electron correlation and scattering in the atomistic modelling of semiconductor devices. In: International Workshop on Computational Electronics, Glasgow, UK, 22-25 May 2000, pp. 159-160. ISBN 0852617046 (doi: 10.1109/IWCE.2000.869974)

Watling, J.R., Zhao, Y.P., Asenov, A. and Barker, J.R. (2000) Nonequilibrium hole transport in deep sub-micron well-tempered Si p-MOSFETs. In: 7th International Workshop on Computational Electronics, Glasgow, UK, 22-25 May 2000, pp. 66-67. ISBN 0852617046 (doi: 10.1109/IWCE.2000.869925)

Zhao, Y.P. et al. (2000) Indication of Non-equilibrium Transport in SiGe p-MOSFETs. In: 30th European Solid-State Device Research Conference, Cork, Ireland, 11-13 September 2000, pp. 224-227. ISBN 2863322486

Watling, J.R., Asenov, A. and Barker, J.R. (1998) Efficient hole transport model in warped bands for use in the simulation of Si/SiGe MOSFETs. In: International Workshop on Computational Electronics, Osaka, Japan, 19-21 October 1998, pp. 96-99. ISBN 0780343697 (doi: 10.1109/IWCE.1998.742719)

This list was generated on Sat Apr 13 12:42:23 2024 BST.