Advanced Devices M ENG5261
- Academic Session: 2018-19
- School: School of Engineering
- Credits: 20
- Level: Level 5 (SCQF level 11)
- Typically Offered: Semester 2
- Available to Visiting Students: Yes
- Available to Erasmus Students: No
This course considers the design and operation of advanced high-frequency electronic and optoelectronic devices including high electron mobility transistors (HEMTs), heterojunction bipolar transistors (HBTs), semiconductor lasers, LEDs, photodetectors and photovoltaic solar cells.
4 lectures per week
Requirements of Entry
Mandatory Entry Requirements
Recommended Entry Requirements
70% Written Exam
15% Written Assignment, including Essay
15% Report: Laboratory report
Main Assessment In: April/May
The aim of this course is to introduce students to the design and operation of advanced high-frequency electronic and optoelectronic devices including high electron mobility transistors (HEMTs), heterojunction bipolar transistors (HBTs), semiconductor lasers, LEDs, photodetectors, CCDs, CMOS imager chips and photovoltaic solar cells.
Intended Learning Outcomes of Course
By the end of this course students will be able to:
■ use semiconductor E-k bandstructure diagrams to design electronic and optoelectronic devices;
■ design semiconductor heterostructures;
■ design a high electron mobility transistor (HEMT) and heterojunction bipolar transistor (HBT);
■ use the absorption and emission of light from semiconductors to optimise optoelectronic devices;
■ design aspects of optoelectronic light emitters (LEDs and semiconductor lasers);
■ design and describe the operation of optoelectronic detectors (photodetectors, CCDs and CMOS image chips) and photovoltaic solar cells;
■ discuss the economic and societal implications of one of the devices studied.
Minimum Requirement for Award of Credits
Students must attend the degree examination and submit at least 75% by weight of the other components of the course's summative assessment.
Students must attend the timetabled laboratory classes.