Dr Edward Wasige

  • Senior Lecturer (Electronic and Nanoscale Engineering)

telephone: 01413308662
email: Edward.Wasige@glasgow.ac.uk

Selected publications

All publications

List by: Type | Date

Jump to: 2014 | 2013 | 2012 | 2011 | 2010 | 2009 | 2008 | 2007 | 2006 | 2005 | 2004 | 2003 | 2002 | 2000 | 1999 | 1997 | 1996
Number of items: 71.

2014

Brown, R., Macfarlane, D., Al-Khalidi, A., Li, X., Ternent, G., Zhou, H., Thayne, I., and Wasige, E. (2014) A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT. IEEE Electron Device Letters, 35(9), pp. 906-908. (doi:10.1109/LED.2014.2334394)

Brown, R., Al-Khalidi, A., Macfarlane, D., Taking, S., Ternent, G., Thayne, I., and Wasige, E. (2014) Novel high performance AlGaN/GaN based enhancement-mode metal-oxide semiconductor high electron mobility transistor. Physica Status Solidi C, 11(3-4), pp. 844-847. (doi:10.1002/pssc.201300179)

Al-Khalidi, A., Gallacher, K., Khalid, A., Paul, D., and Wasige, E. (2014) 0.25 Ω-mm Ohmic contacts to AlN/GaN HEMT structure with in-situ SiN passivation. In: 7th Wide Band Gap Semiconductors and Components Workshop, Frascati, Italy, 11-12 Sep 2014,

Al-Khalidi, A., Gallacher , K., and Wasige, E. (2014) Effect of annealing time and temperature on Ohmic contacts to AlN/GaN HEMT structure with in-situ SiN passivation. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014, p. 185.

Al-Khalidi, A., Khalid, A., and Wasige, E. (2014) Comparison of AlGaN/GaN HEMTs on Silicon, Sapphire and SiC substrates- a thermal perspective. In: Compound Semiconductor Week 2014, Montpellier, France, 11–15 May 2014,

Alharbi, K.H., Ofiare, A., Wang, J., Khalid, A., Cumming, D., and Wasige, E. (2014) Radiation pattern characterisation setup for G-band planar yagi antennas. In: 2nd Annual Active and Passive RF Devices Seminar, Birmingham, UK, 29 Oct 2014,

Cho, S.-J., Roberts, J.W., Li, X., Ternent, G., Floros, K., Thayne, I., Chalker, P., and Wasige, E. (2014) Effect of O2 plasma pre-treatment in Al2O3 passivation using atomic-layer-deposited on GaN based metal-oxide-semiconductor capacitor. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014, p. 184.

Faramehr, S., Al-Khalidi, A., Khalid, A., Wasige, E., Igić, P., and Kalna, K. (2014) Device simulation and optimization of i-GaN capped AlGaN/AlN/GaN HEMT. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014,

Khalid, A., Wang, J., Ofiare, A., Alharbi , K., Cumming, D., and Wasige, E. (2014) Resonant tunneling and planar Gunn diodes: a comparison of two solid state sources for terahertz technology. In: UCMMT 2014: 7 th European/UK-China Workshop on Millimeter Waves and Terahertz Technologies, Chengdu, China, 2–4 September 2014, (Unpublished)

Li, X., Ternent, G., Al-Khalidi, A., Floros, K., Wasige, E., and Thayne, I. (2014) Low temperature Ohmic contacts to AlGaN/GaN HFETs on Si substrates using SiCl4 based RIE recess etching. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014, p. 176.

Li, X., Ternent, G., Al-Khalidi, A., Floros, K., Wasige, E., and Thayne, I. (2014) Low temperature Ohmic contacts to AlGaN/GaN HFETs on Si substrates using SiCl4based RIE recess etching. In: UK Semiconductors 2014, Sheffield, UK, 9-10 July 2014,

Möreke, J. et al. (2014) Investigation of the GaN-on-GaAs interface for vertical power device applications. Journal of Applied Physics, 116(1), 014502. (doi:10.1063/1.4887139)

Ofiare, A., Alharbi, K. , Khalid, A., Wang, J., Cumming, D., and Wasige, E. (2014) Wideband planar Yagi antennas for millimetre wave frequency applications. In: UCMMT 2014: 7 th European/UK-China Workshop on Millimeter Waves and Terahertz Technologies, Chengdu, China, 2–4 September 2014, (Unpublished)

Sinclair, J., Brown, R., Al-Khalidi, A., and Wasige, E. (2014) Fabrication and characterisation of normally-off GaN-based MOS-HEMTs. In: 7th IET International Conference on Power Electronics, Machines and Drives (PEMD) 2014, Manchester, UK, 8-10 Apr 2014, ISBN 9781849198141

Wang, J., Alharbi , K., Ofiare, A., Khalid, A., Wang, L., Cumming, D., and Wasige, E. (2014) Series coupled resonant tunneling diode oscillators for terahertz applications. In: UCMMT 2014: 7 th European/UK-China Workshop on Millimeter Waves and Terahertz Technologies, Chengdu, China, 2–4 September 2014, (Unpublished)

Wang, J., Wang, L., Li, C., Alharbi, K., Khalid, A., and Wasige, E. (2014) W-band InP-based resonant tunnelling diode oscillator with milliwatt output power. In: 26th International Conference on Indium Phosphide and Related Materials, Montpelier, France, 11-15 May 2014, pp. 1-2. (doi:10.1109/ICIPRM.2014.6880531)

2013

Wang, J., Wang, L., Li, C., and Wasige, E. (2013) 28 GHz MMIC resonant tunnelling diode oscillator of around 1mW output power. Electronics Letters, 49(13), pp. 816-818. (doi:10.1049/el.2013.1583)

Brown, R., Al-Khalidi, A., Macfarlane, D., Taking, S., Ternent, G., Thayne, I., and Wasige, E. (2013) A normally-off AlGaN/GaN HEMT technology. In: UK Nitrides Consortium, Sheffield, UK, Jul 2013,

Brown, R., Al-Khalidi, A., Macfarlane, D., Taking, S., and Wasige, E. (2013) A novel high performance AlGaN/GaN based enhancement-mode metal-oxide-semiconductor high electron mobility transistor. In: 10th International Conference on Nitride Semiconductors, Washington, D.C., USA, 25-30 Aug 2013,

Brown, R., Al-Khalidi, A., Ternent, G., Thayne, I., and Wasige, E. (2013) A normally off AlGaN/GaN MOSHEMT technology. In: 22nd European Workshop on Heterostructure Technology (HETECH), Glasgow, UK, 9-11 Sep 2013,

Wang, J., Wang, L., Li, C., Cumming, D., and Wasige, E. (2013) Novel resonant tunnelling diode oscillator with high output power. In: UK Semiconductors 2013, Sheffield, UK, 3 - 4 Jul 2013,

Wang, J., and Wasige, E. (2013) IV characteristics of resonant tunnelling diodes investigated by a numerical model based on semiconductor physics. In: 22nd European Workshop on Heterostructure Technology (HETECH), Glasgow, UK, 9-11 Sep 2013,

2012

Wang, J., and Wasige, E. (2012) Self-consistent analysis of the IV characteristics of resonant tunnelling diodes. International Journal of Terahertz Science and Technology, 5(4), pp. 153-162. (doi:10.11906/TST.153-162.2012.12.14)

2011

Taking, S., Macfarlane, D., Khokhar, A. Z., Dabiran, A. M., and Wasige, E. (2011) DC and RF performance of AlN/GaN MOS-HEMTs. IEICE Transactions on Electronics, E94-C(5), pp. 835-841.

Taking, S., MacFarlane, D., and Wasige, E. (2011) AlN/GaN MOS-HEMTs with thermally grown Al2O3 passivation. IEEE Transactions on Electron Devices, 58(5), pp. 1418-1424. (doi:10.1109/TED.2011.2114665)

Taking, S., MacFarlane, D., and Wasige, E. (2011) AlN/GaN-based MOS-HEMT technology: processing and device results. Active and Passive Electronic Components, 2011(821305), (doi:10.1155/2011/821305)

Wang, L., Figueiredo, J.M.L., Ironside, C.N., and Wasige, E. (2011) DC characterisation of tunnel diodes under stable non-oscillatory circuit conditions. IEEE Transactions on Electron Devices, 58(2), pp. 343-347. (doi:10.1109/TED.2010.2091507 )

2010

Taking, S. et al. (2010) Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium. Electronics Letters, 46(4), pp. 301-302. (doi:10.1049/el.2010.2781)

Banerjee, A., Taking, S., MacFarlane, D., Dabiran, A., and Wasige, E. (2010) Development of Enhancement Mode AlGaN/GaN MOS-HEMTs using Localized Gate-Foot Oxidation. In: The 5th European Microwave Integrated Circuits Conference, Proceedings, France, 26th Sept – 1st Oct 2010,

Banerjee, A., Taking, S., MacFarlane, D., and Wasige, E. (2010) Enhancement Mode GaN-based MOSHEMTs. In: ARMMS: RF and Microwave Society Conference, Steventon, Oxfordshire, 19th and 20th April ,

Ironside, C.N., Figueiredo, J.M.L., Romeira, B., Slight, T.J., Wang, L., and Wasige, E. (2010) Resonant Tunneling Diode Optoelectronic Integrated Circuits [paper 7608-17]. In: SPIE Photonics West in Quantum Sensing and Nanophotonics Devices VII, San Francisco, California, 24 - 28 January 2010,

Taking, S., Banerjee, A., Zhou, H., Li, X., MacFarlane, D., Dabiran, A., and Wasige, E. (2010) Thin Al2O3 formed by thermal oxidation of evaporated aluminium for AlN/GaN MOS-HEMT technology. In: UKNC Conference, Cork, Ireland, 12-13 Jan 2010,

Taking, S., Khokhar, A., MacFarlane, D., Sharabi, S., Dabiran, A.M., and Wasige, E. (2010) New Process for Low Sheet and Ohmic Contact Resistance of AlN/GaN MOS-HEMTs. In: The 5th European Microwave Integrated Circuits Conference, Proceedings, France, 26th Sept – 1st Oct 2010,

Wang, L., and Wasige, E. (2010) Tunnel Diode Microwave Oscillators Employing a Novel Power Combining Circuit Topology. In: European Microwave Conference, September, 2010,

2009

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L.Q., Wasige, E., Ironside, C.N., Kelly, A.E., and Green, R. (2009) Nonlinear dynamics of resonant tunneling optoelectronic circuits for wireless/optical interfaces. IEEE Journal of Quantum Electronics, 45(11), pp. 1436-1445. (doi:10.1109/JQE.2009.2028084)

Rahman, F., Xu, S., Watson, I.M., Mutha, D.K.B., Oxland, R.K., Johnson, N.P., Banerjee, A., and Wasige, E. (2009) Ohmic contact formation to bulk and heterostructure gallium nitride family semiconductors. Applied Physics A: Materials Science and Processing, 94(3), pp. 633-639. (doi:10.1007/s00339-008-4848-9)

Ironside, C., Romeira, B., Figueiredo, J.M.L., Slight, T., Wasige, E., and Wang, L. (2009) The resonant tunneling diode-laser optoelectronic integrated circuit operating as a voltage controlled oscillator. In: SPIE Microtechnologies for the new millennium, photonic materials devices and applications, Dresden, 4-6 May 2009, (doi:10.1117/12.822570)

Romeira, B., Figueiredo, J.M.L., Slight, T., Wang, L., Wasige, E., and Ironside, C. (2009) Wireless to optical frequency locking and chaos using a resonant tunnelling - laser diode circuit. In: 2nd IEEE/LEOS Winter Topicals, Innsbruck, Austria, 12-14 Jan 2009, pp. 128-129. (doi:10.1109/LEOSWT.2009.4771690 )

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L., Wasige, E., and Ironside, C.N. (2009) Wireless Injection Locking and Phase Noise Reduction in a Semiconductor Laser driven by a Resonant Tunnelling Diode Nonlinear Oscillator [paper CI3.1]. In: CLEO Europe, Munich, 2009, (doi:10.1109/CLEOE-EQEC.2009.5196240 )

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L., Wasige, E., and Ironside, C.N. (2009) Wireless to Optical Frequency Locking and Chaos using a Resonant Tunnelling - Laser Diode Circuit [paper MB3.4]. In: 2nd IEEE/LEOS Winter Topicals, Innsbruck, Austria, 12-14 January 2008,

Romeira, B., Figueiredo, J.M., Slight, T.J., Wang, L., Wasige, E., and Ironside, C.N. (2009) Wireless/Photonics Interfaces based on Resonant Tunneling Diode Optoelectronic Oscillators. In: The Conference on Lasers and Electro-Optics (CLEO)/The International Quantum Electronics Conference (IQEC) , Baltimore, MD , 2-4 June 2009 ,

Taking, S., Banerjee, A., Rahman, F., Dabiran, A., and Wasige, E. (2009) Novel AlN/GaN HEMTs for RF Power Applications. In: UK Semiconductors, Sheffield, UK, 2-3rd July,

2008

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L., Wasige, E., Ironside, C.N., Quintana, J.M., and Avedillo, M.J. (2008) Synchronisation and chaos in a laser diode driven by a resonant tunnelling diode. IET Optoelectronics, 2(6), pp. 211-215. (doi:10.1049/iet-opt:20080024)

Slight, T.J., Romeira, B., Wang, L., Figueiredo, J.M.L., Wasige, E., and Ironside, C.N. (2008) A liénard oscillator resonant tunnelling diode-laser diode hybrid integrated circuit: model and experiment. IEEE Journal of Quantum Electronics, 44(12), pp. 1158-1163. (doi:10.1109/JQE.2008.2000924 )

Figueiredo, J.M.L., Romeira, B., Slight, T.J., Wang, L., Wasige, E., and Ironside, C.N. (2008) Self-oscillation and period adding from resonant tunnelling diode-laser diode circuit. Electronics Letters, 44(14), 876-U207. (doi:10.1049/el:20080350)

Banerjee, A., Taking, S., Rahman, F., and Wasige, E. (2008) Process development for high Al-content barrier GaN HEMTs. In: UK Nitride Consortium Summer Meeting, Sheffield, UK, 1 July 2008,

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L., Wasige, E., and Ironside, C.N. (2008) Optoelectronic Integration of a Resonant Tunneling Diode and a Laser Diode [paper WeB4]. In: European Conference on Integrated Optics (ECIO 2008), Eindhoven, Netherlands, June 11-12-13, 2008,

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L., Wasige, E., and Ironside, C.N. (2008) Synchronizing Optical to Wireless Signals Using a Resonant Tunneling Diode Laser Diode Circuit [paper TuB1]. In: LEOS Conference 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, Newport Beach, CA, November, 2008,

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L., Wasige, E., Ironside, C.N., Quintana, J.M., and Avedillo, M.J. (2008) Observation of Frequency Division and Chaos Behavior in a Laser Diode Driven by a Resonant Tunneling Diode [paper CMY5]. In: Conference on Lasers and Electro-Optics (CLEO), San Jose, CA, 2008,

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L., Wasige, E., Ironside, C.N., Quintana, J.M., and Avedillo, M.J. (2008) Synchronization and chaos in a laser diode driven by a resonant tunneling diode [Paper no. 32]. In: Conference on Semiconductor Integrated Optoelectronics (SIEO'08), Cardiff, UK, 31 Mar - 2 April 2008,

Taking, S., Banerjee, A., Rahman, F., Dabiran, A., and Wasige, E. (2008) Low resistance Ohmic contacts for AlN/GaN HEMTs. In: UK Nitride Consortium Summer Meeting, Sheffield, UK, 1 July 2008,

2007

Rahman, F., Sun, X., Mutha, D.K.B., Watson, I.M., and Wasige, E. (2007) Investigations on ohmic contacts to bulk and heterostructure III-nitrides. In: UK Nitride Consortium Summer Meeting, Warwick, UK, 3 July 2007,

2006

Abuelmaatti, A., Thayne, I., McGregor, I., and Wasige, E. (2006) A new implementation for RF SiCMOS transistor model using SDD for quantifying individual contribution to distortion from transistor's nonlinear parameters. In: Asia Pacific Microwave Conference, Yokohama, Japan,

McGregor, I., Wasige, E., and Thayne, I. (2006) Sub milli-watt 2.4GHz super regenerative transceiver with ultra low duty cycle. In: Asia Pacific Microwave Conference, Yokohama, Japan, WEOF-26.

McGregor, I., Whyte, G., Elgaid, K., Wasige, E., and Thayne, I. (2006) A 400 micro W Tx/380 microW Rx 2.4GHz super-regenerative GaAs transceiver. In: European Microwave Conference, Manchester, UK, pp. 1523-1525.

Wasige, E. (2006) Extracting the HBT series parasitics under active bias conditions. In: European Microwave Conference, Manchester, UK, pp. 1267-1270.

2005

Craig, V., Burns, G., Oxland, R., and Wasige, E. (2005) InP HBT technology for high frequency applications. In: 10th High Frequency Postgraduate Student Colloquium, Leeds, UK,

McGregor, I., Maclean, D., Wasige, E., and Thayne, I. (2005) Using return ratios to desing microwave oscillators. In: 10th High Frequency Postgraduate Student Colloquium, Leeds, UK, pp. 73-76.

2004

McGregor, I., Whyte, G., Wasige, E., and Thayne, I. (2004) UWB test system. In: 7th Analog Signal Processing Conference, Oxford, UK,

2003

Wasige, E. (2003) Determining the HBT base-collector elements directly from S-parameter data. In: 2003 IEEE MTTS-S International Microwave Symposium Digest, Vols 1-3, pp. 1019-1022.

2002

Sheinman, B., Wasige, E., Rudolph, M., Doerner, R., Sidorov, V., Cohen, S., and Ritter, D. (2002) A peeling algorithm for extraction of the HBT small-signal equivalent circuit. IEEE Transactions on Microwave Theory and Techniques, 50(12), pp. 2804-2810. (doi:10.1109/TMTT.2002.805195)

Wasige, E., Sheinman, B., Sidorov, V., Cohen, S., and Ritter, D. (2002) An analytic expression for the HBT extrinsic base-collector capacitance derived from S-parameter measurements. In: Microwave Symposium Digest, 2002 IEEE MTT-S International, pp. 733-736.

Wasige, E., Sheinman, B., Sidorov, V., Cohen, S., and Ritter, D. (2002) An analytic expression for the HBT extrinsic base-collector capacitance derived from S-parameter measurements. In: 2002 IEEE MTT-S International Microwave Symposium, Seattle, WA, USA, 02-07 Jun 2002, pp. 733-736. (doi:10.1109/MWSYM.2002.1011733)

2000

Kompa, G., Joodaki, M., and Wasige, E. (2000) Quasi-monolithic integration technology for flexible and reliable design of microwave and millimeterwave circuits. In: Asia-Pacific Telecom (APT-2000), Velore, India, 14-16 Dec 2000, pp. 1-6.

Kompa, G., and Wasige, E. (2000) Quasi-monolithic Si-GaAs hybrid technology for microwave and millimeter-wave application. In: First Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC 2000), Nanjing, China, Apr 2000, pp. 33-36.

Kompa, G., and Wasige, E. (2000) Quasi-monolithic hybrid technology based on Si micromachining and low-temperature thin-film processing. In: MICRO.tec 2000, VDE World Microtechnologies Congress, Hannover, Germany, 25-27 Sep 2000, pp. 109-114.

1999

Wasige, E., Kompa, G., Van Raay, F., Scholz, W., Rangelow, I.W., Kassing, R., Bertram, S., and Hudek, P. (1999) 12 GHz coplanar quasi-monolithic oscillator. In: 1999 IEEE MTT-S International Microwave Symposium, Anaheim, CA, USA, 13-19 Jun 1999, pp. 227-228. ISBN 0780351355 (doi:10.1109/MWSYM.1999.779463)

Wasige, E., Kompa, G., Van Raay, F., Scholz, W., Rangelow, I.W., Kassing, R., Bertram, S., and Hudek, P. (1999) GaAs FET characterization in a quasi-monolithic Si environment. In: 1999 IEEE MTT-S International Microwave Symposium, Anaheim, CA, USA, 13-19 Jun 1999, pp. 1889-1891. ISBN 0780351355 (doi:10.1109/MWSYM.1999.780342)

1997

Wasige, E., and Kompa, G. (1997) Air bridge based planar hybrid technology for microwave and millimeterwave applications. In: 27th European Microwave Conference, Jerusalem, Israel, Sep 1997, pp. 375-378.

Wasige, E., Kompa, G., van Raay, F., Rangelow, I.W., Scholz, W., Shi, F., Kassing, R., Meyer, R., and Amann, M.-C. (1997) Air bridge based planar hybrid technology for microwave and millimeterwave applications. In: IEEE MTT-S International Microwave Symposium, Denver, CO, USA, 8-13 Jun 1997, pp. 925-928. (doi:10.1109/MWSYM.1997.602951)

1996

Wasige, E., and Kompa, G. (1996) A new silicon micro-test fixture facilitates the reusability of accurately characterized low power FET devices. In: 26th European Microwave Conference, Prague, Czech Republic, 1996, pp. 521-523.

This list was generated on Tue Jun 30 21:30:16 2015 BST.
Number of items: 71.

Articles

Brown, R., Macfarlane, D., Al-Khalidi, A., Li, X., Ternent, G., Zhou, H., Thayne, I., and Wasige, E. (2014) A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT. IEEE Electron Device Letters, 35(9), pp. 906-908. (doi:10.1109/LED.2014.2334394)

Brown, R., Al-Khalidi, A., Macfarlane, D., Taking, S., Ternent, G., Thayne, I., and Wasige, E. (2014) Novel high performance AlGaN/GaN based enhancement-mode metal-oxide semiconductor high electron mobility transistor. Physica Status Solidi C, 11(3-4), pp. 844-847. (doi:10.1002/pssc.201300179)

Möreke, J. et al. (2014) Investigation of the GaN-on-GaAs interface for vertical power device applications. Journal of Applied Physics, 116(1), 014502. (doi:10.1063/1.4887139)

Wang, J., Wang, L., Li, C., and Wasige, E. (2013) 28 GHz MMIC resonant tunnelling diode oscillator of around 1mW output power. Electronics Letters, 49(13), pp. 816-818. (doi:10.1049/el.2013.1583)

Wang, J., and Wasige, E. (2012) Self-consistent analysis of the IV characteristics of resonant tunnelling diodes. International Journal of Terahertz Science and Technology, 5(4), pp. 153-162. (doi:10.11906/TST.153-162.2012.12.14)

Taking, S., Macfarlane, D., Khokhar, A. Z., Dabiran, A. M., and Wasige, E. (2011) DC and RF performance of AlN/GaN MOS-HEMTs. IEICE Transactions on Electronics, E94-C(5), pp. 835-841.

Taking, S., MacFarlane, D., and Wasige, E. (2011) AlN/GaN MOS-HEMTs with thermally grown Al2O3 passivation. IEEE Transactions on Electron Devices, 58(5), pp. 1418-1424. (doi:10.1109/TED.2011.2114665)

Taking, S., MacFarlane, D., and Wasige, E. (2011) AlN/GaN-based MOS-HEMT technology: processing and device results. Active and Passive Electronic Components, 2011(821305), (doi:10.1155/2011/821305)

Wang, L., Figueiredo, J.M.L., Ironside, C.N., and Wasige, E. (2011) DC characterisation of tunnel diodes under stable non-oscillatory circuit conditions. IEEE Transactions on Electron Devices, 58(2), pp. 343-347. (doi:10.1109/TED.2010.2091507 )

Taking, S. et al. (2010) Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium. Electronics Letters, 46(4), pp. 301-302. (doi:10.1049/el.2010.2781)

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L.Q., Wasige, E., Ironside, C.N., Kelly, A.E., and Green, R. (2009) Nonlinear dynamics of resonant tunneling optoelectronic circuits for wireless/optical interfaces. IEEE Journal of Quantum Electronics, 45(11), pp. 1436-1445. (doi:10.1109/JQE.2009.2028084)

Rahman, F., Xu, S., Watson, I.M., Mutha, D.K.B., Oxland, R.K., Johnson, N.P., Banerjee, A., and Wasige, E. (2009) Ohmic contact formation to bulk and heterostructure gallium nitride family semiconductors. Applied Physics A: Materials Science and Processing, 94(3), pp. 633-639. (doi:10.1007/s00339-008-4848-9)

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L., Wasige, E., Ironside, C.N., Quintana, J.M., and Avedillo, M.J. (2008) Synchronisation and chaos in a laser diode driven by a resonant tunnelling diode. IET Optoelectronics, 2(6), pp. 211-215. (doi:10.1049/iet-opt:20080024)

Slight, T.J., Romeira, B., Wang, L., Figueiredo, J.M.L., Wasige, E., and Ironside, C.N. (2008) A liénard oscillator resonant tunnelling diode-laser diode hybrid integrated circuit: model and experiment. IEEE Journal of Quantum Electronics, 44(12), pp. 1158-1163. (doi:10.1109/JQE.2008.2000924 )

Figueiredo, J.M.L., Romeira, B., Slight, T.J., Wang, L., Wasige, E., and Ironside, C.N. (2008) Self-oscillation and period adding from resonant tunnelling diode-laser diode circuit. Electronics Letters, 44(14), 876-U207. (doi:10.1049/el:20080350)

Sheinman, B., Wasige, E., Rudolph, M., Doerner, R., Sidorov, V., Cohen, S., and Ritter, D. (2002) A peeling algorithm for extraction of the HBT small-signal equivalent circuit. IEEE Transactions on Microwave Theory and Techniques, 50(12), pp. 2804-2810. (doi:10.1109/TMTT.2002.805195)

Conference Proceedings

Al-Khalidi, A., Gallacher, K., Khalid, A., Paul, D., and Wasige, E. (2014) 0.25 Ω-mm Ohmic contacts to AlN/GaN HEMT structure with in-situ SiN passivation. In: 7th Wide Band Gap Semiconductors and Components Workshop, Frascati, Italy, 11-12 Sep 2014,

Al-Khalidi, A., Gallacher , K., and Wasige, E. (2014) Effect of annealing time and temperature on Ohmic contacts to AlN/GaN HEMT structure with in-situ SiN passivation. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014, p. 185.

Al-Khalidi, A., Khalid, A., and Wasige, E. (2014) Comparison of AlGaN/GaN HEMTs on Silicon, Sapphire and SiC substrates- a thermal perspective. In: Compound Semiconductor Week 2014, Montpellier, France, 11–15 May 2014,

Alharbi, K.H., Ofiare, A., Wang, J., Khalid, A., Cumming, D., and Wasige, E. (2014) Radiation pattern characterisation setup for G-band planar yagi antennas. In: 2nd Annual Active and Passive RF Devices Seminar, Birmingham, UK, 29 Oct 2014,

Cho, S.-J., Roberts, J.W., Li, X., Ternent, G., Floros, K., Thayne, I., Chalker, P., and Wasige, E. (2014) Effect of O2 plasma pre-treatment in Al2O3 passivation using atomic-layer-deposited on GaN based metal-oxide-semiconductor capacitor. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014, p. 184.

Faramehr, S., Al-Khalidi, A., Khalid, A., Wasige, E., Igić, P., and Kalna, K. (2014) Device simulation and optimization of i-GaN capped AlGaN/AlN/GaN HEMT. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014,

Khalid, A., Wang, J., Ofiare, A., Alharbi , K., Cumming, D., and Wasige, E. (2014) Resonant tunneling and planar Gunn diodes: a comparison of two solid state sources for terahertz technology. In: UCMMT 2014: 7 th European/UK-China Workshop on Millimeter Waves and Terahertz Technologies, Chengdu, China, 2–4 September 2014, (Unpublished)

Li, X., Ternent, G., Al-Khalidi, A., Floros, K., Wasige, E., and Thayne, I. (2014) Low temperature Ohmic contacts to AlGaN/GaN HFETs on Si substrates using SiCl4 based RIE recess etching. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014, p. 176.

Li, X., Ternent, G., Al-Khalidi, A., Floros, K., Wasige, E., and Thayne, I. (2014) Low temperature Ohmic contacts to AlGaN/GaN HFETs on Si substrates using SiCl4based RIE recess etching. In: UK Semiconductors 2014, Sheffield, UK, 9-10 July 2014,

Ofiare, A., Alharbi, K. , Khalid, A., Wang, J., Cumming, D., and Wasige, E. (2014) Wideband planar Yagi antennas for millimetre wave frequency applications. In: UCMMT 2014: 7 th European/UK-China Workshop on Millimeter Waves and Terahertz Technologies, Chengdu, China, 2–4 September 2014, (Unpublished)

Sinclair, J., Brown, R., Al-Khalidi, A., and Wasige, E. (2014) Fabrication and characterisation of normally-off GaN-based MOS-HEMTs. In: 7th IET International Conference on Power Electronics, Machines and Drives (PEMD) 2014, Manchester, UK, 8-10 Apr 2014, ISBN 9781849198141

Wang, J., Alharbi , K., Ofiare, A., Khalid, A., Wang, L., Cumming, D., and Wasige, E. (2014) Series coupled resonant tunneling diode oscillators for terahertz applications. In: UCMMT 2014: 7 th European/UK-China Workshop on Millimeter Waves and Terahertz Technologies, Chengdu, China, 2–4 September 2014, (Unpublished)

Wang, J., Wang, L., Li, C., Alharbi, K., Khalid, A., and Wasige, E. (2014) W-band InP-based resonant tunnelling diode oscillator with milliwatt output power. In: 26th International Conference on Indium Phosphide and Related Materials, Montpelier, France, 11-15 May 2014, pp. 1-2. (doi:10.1109/ICIPRM.2014.6880531)

Brown, R., Al-Khalidi, A., Macfarlane, D., Taking, S., Ternent, G., Thayne, I., and Wasige, E. (2013) A normally-off AlGaN/GaN HEMT technology. In: UK Nitrides Consortium, Sheffield, UK, Jul 2013,

Brown, R., Al-Khalidi, A., Macfarlane, D., Taking, S., and Wasige, E. (2013) A novel high performance AlGaN/GaN based enhancement-mode metal-oxide-semiconductor high electron mobility transistor. In: 10th International Conference on Nitride Semiconductors, Washington, D.C., USA, 25-30 Aug 2013,

Brown, R., Al-Khalidi, A., Ternent, G., Thayne, I., and Wasige, E. (2013) A normally off AlGaN/GaN MOSHEMT technology. In: 22nd European Workshop on Heterostructure Technology (HETECH), Glasgow, UK, 9-11 Sep 2013,

Wang, J., Wang, L., Li, C., Cumming, D., and Wasige, E. (2013) Novel resonant tunnelling diode oscillator with high output power. In: UK Semiconductors 2013, Sheffield, UK, 3 - 4 Jul 2013,

Wang, J., and Wasige, E. (2013) IV characteristics of resonant tunnelling diodes investigated by a numerical model based on semiconductor physics. In: 22nd European Workshop on Heterostructure Technology (HETECH), Glasgow, UK, 9-11 Sep 2013,

Banerjee, A., Taking, S., MacFarlane, D., Dabiran, A., and Wasige, E. (2010) Development of Enhancement Mode AlGaN/GaN MOS-HEMTs using Localized Gate-Foot Oxidation. In: The 5th European Microwave Integrated Circuits Conference, Proceedings, France, 26th Sept – 1st Oct 2010,

Banerjee, A., Taking, S., MacFarlane, D., and Wasige, E. (2010) Enhancement Mode GaN-based MOSHEMTs. In: ARMMS: RF and Microwave Society Conference, Steventon, Oxfordshire, 19th and 20th April ,

Ironside, C.N., Figueiredo, J.M.L., Romeira, B., Slight, T.J., Wang, L., and Wasige, E. (2010) Resonant Tunneling Diode Optoelectronic Integrated Circuits [paper 7608-17]. In: SPIE Photonics West in Quantum Sensing and Nanophotonics Devices VII, San Francisco, California, 24 - 28 January 2010,

Taking, S., Banerjee, A., Zhou, H., Li, X., MacFarlane, D., Dabiran, A., and Wasige, E. (2010) Thin Al2O3 formed by thermal oxidation of evaporated aluminium for AlN/GaN MOS-HEMT technology. In: UKNC Conference, Cork, Ireland, 12-13 Jan 2010,

Taking, S., Khokhar, A., MacFarlane, D., Sharabi, S., Dabiran, A.M., and Wasige, E. (2010) New Process for Low Sheet and Ohmic Contact Resistance of AlN/GaN MOS-HEMTs. In: The 5th European Microwave Integrated Circuits Conference, Proceedings, France, 26th Sept – 1st Oct 2010,

Wang, L., and Wasige, E. (2010) Tunnel Diode Microwave Oscillators Employing a Novel Power Combining Circuit Topology. In: European Microwave Conference, September, 2010,

Ironside, C., Romeira, B., Figueiredo, J.M.L., Slight, T., Wasige, E., and Wang, L. (2009) The resonant tunneling diode-laser optoelectronic integrated circuit operating as a voltage controlled oscillator. In: SPIE Microtechnologies for the new millennium, photonic materials devices and applications, Dresden, 4-6 May 2009, (doi:10.1117/12.822570)

Romeira, B., Figueiredo, J.M.L., Slight, T., Wang, L., Wasige, E., and Ironside, C. (2009) Wireless to optical frequency locking and chaos using a resonant tunnelling - laser diode circuit. In: 2nd IEEE/LEOS Winter Topicals, Innsbruck, Austria, 12-14 Jan 2009, pp. 128-129. (doi:10.1109/LEOSWT.2009.4771690 )

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L., Wasige, E., and Ironside, C.N. (2009) Wireless Injection Locking and Phase Noise Reduction in a Semiconductor Laser driven by a Resonant Tunnelling Diode Nonlinear Oscillator [paper CI3.1]. In: CLEO Europe, Munich, 2009, (doi:10.1109/CLEOE-EQEC.2009.5196240 )

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L., Wasige, E., and Ironside, C.N. (2009) Wireless to Optical Frequency Locking and Chaos using a Resonant Tunnelling - Laser Diode Circuit [paper MB3.4]. In: 2nd IEEE/LEOS Winter Topicals, Innsbruck, Austria, 12-14 January 2008,

Romeira, B., Figueiredo, J.M., Slight, T.J., Wang, L., Wasige, E., and Ironside, C.N. (2009) Wireless/Photonics Interfaces based on Resonant Tunneling Diode Optoelectronic Oscillators. In: The Conference on Lasers and Electro-Optics (CLEO)/The International Quantum Electronics Conference (IQEC) , Baltimore, MD , 2-4 June 2009 ,

Taking, S., Banerjee, A., Rahman, F., Dabiran, A., and Wasige, E. (2009) Novel AlN/GaN HEMTs for RF Power Applications. In: UK Semiconductors, Sheffield, UK, 2-3rd July,

Banerjee, A., Taking, S., Rahman, F., and Wasige, E. (2008) Process development for high Al-content barrier GaN HEMTs. In: UK Nitride Consortium Summer Meeting, Sheffield, UK, 1 July 2008,

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L., Wasige, E., and Ironside, C.N. (2008) Optoelectronic Integration of a Resonant Tunneling Diode and a Laser Diode [paper WeB4]. In: European Conference on Integrated Optics (ECIO 2008), Eindhoven, Netherlands, June 11-12-13, 2008,

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L., Wasige, E., and Ironside, C.N. (2008) Synchronizing Optical to Wireless Signals Using a Resonant Tunneling Diode Laser Diode Circuit [paper TuB1]. In: LEOS Conference 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, Newport Beach, CA, November, 2008,

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L., Wasige, E., Ironside, C.N., Quintana, J.M., and Avedillo, M.J. (2008) Observation of Frequency Division and Chaos Behavior in a Laser Diode Driven by a Resonant Tunneling Diode [paper CMY5]. In: Conference on Lasers and Electro-Optics (CLEO), San Jose, CA, 2008,

Romeira, B., Figueiredo, J.M.L., Slight, T.J., Wang, L., Wasige, E., Ironside, C.N., Quintana, J.M., and Avedillo, M.J. (2008) Synchronization and chaos in a laser diode driven by a resonant tunneling diode [Paper no. 32]. In: Conference on Semiconductor Integrated Optoelectronics (SIEO'08), Cardiff, UK, 31 Mar - 2 April 2008,

Taking, S., Banerjee, A., Rahman, F., Dabiran, A., and Wasige, E. (2008) Low resistance Ohmic contacts for AlN/GaN HEMTs. In: UK Nitride Consortium Summer Meeting, Sheffield, UK, 1 July 2008,

Rahman, F., Sun, X., Mutha, D.K.B., Watson, I.M., and Wasige, E. (2007) Investigations on ohmic contacts to bulk and heterostructure III-nitrides. In: UK Nitride Consortium Summer Meeting, Warwick, UK, 3 July 2007,

Abuelmaatti, A., Thayne, I., McGregor, I., and Wasige, E. (2006) A new implementation for RF SiCMOS transistor model using SDD for quantifying individual contribution to distortion from transistor's nonlinear parameters. In: Asia Pacific Microwave Conference, Yokohama, Japan,

McGregor, I., Wasige, E., and Thayne, I. (2006) Sub milli-watt 2.4GHz super regenerative transceiver with ultra low duty cycle. In: Asia Pacific Microwave Conference, Yokohama, Japan, WEOF-26.

McGregor, I., Whyte, G., Elgaid, K., Wasige, E., and Thayne, I. (2006) A 400 micro W Tx/380 microW Rx 2.4GHz super-regenerative GaAs transceiver. In: European Microwave Conference, Manchester, UK, pp. 1523-1525.

Wasige, E. (2006) Extracting the HBT series parasitics under active bias conditions. In: European Microwave Conference, Manchester, UK, pp. 1267-1270.

Craig, V., Burns, G., Oxland, R., and Wasige, E. (2005) InP HBT technology for high frequency applications. In: 10th High Frequency Postgraduate Student Colloquium, Leeds, UK,

McGregor, I., Maclean, D., Wasige, E., and Thayne, I. (2005) Using return ratios to desing microwave oscillators. In: 10th High Frequency Postgraduate Student Colloquium, Leeds, UK, pp. 73-76.

McGregor, I., Whyte, G., Wasige, E., and Thayne, I. (2004) UWB test system. In: 7th Analog Signal Processing Conference, Oxford, UK,

Wasige, E. (2003) Determining the HBT base-collector elements directly from S-parameter data. In: 2003 IEEE MTTS-S International Microwave Symposium Digest, Vols 1-3, pp. 1019-1022.

Wasige, E., Sheinman, B., Sidorov, V., Cohen, S., and Ritter, D. (2002) An analytic expression for the HBT extrinsic base-collector capacitance derived from S-parameter measurements. In: Microwave Symposium Digest, 2002 IEEE MTT-S International, pp. 733-736.

Wasige, E., Sheinman, B., Sidorov, V., Cohen, S., and Ritter, D. (2002) An analytic expression for the HBT extrinsic base-collector capacitance derived from S-parameter measurements. In: 2002 IEEE MTT-S International Microwave Symposium, Seattle, WA, USA, 02-07 Jun 2002, pp. 733-736. (doi:10.1109/MWSYM.2002.1011733)

Kompa, G., Joodaki, M., and Wasige, E. (2000) Quasi-monolithic integration technology for flexible and reliable design of microwave and millimeterwave circuits. In: Asia-Pacific Telecom (APT-2000), Velore, India, 14-16 Dec 2000, pp. 1-6.

Kompa, G., and Wasige, E. (2000) Quasi-monolithic Si-GaAs hybrid technology for microwave and millimeter-wave application. In: First Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC 2000), Nanjing, China, Apr 2000, pp. 33-36.

Kompa, G., and Wasige, E. (2000) Quasi-monolithic hybrid technology based on Si micromachining and low-temperature thin-film processing. In: MICRO.tec 2000, VDE World Microtechnologies Congress, Hannover, Germany, 25-27 Sep 2000, pp. 109-114.

Wasige, E., Kompa, G., Van Raay, F., Scholz, W., Rangelow, I.W., Kassing, R., Bertram, S., and Hudek, P. (1999) 12 GHz coplanar quasi-monolithic oscillator. In: 1999 IEEE MTT-S International Microwave Symposium, Anaheim, CA, USA, 13-19 Jun 1999, pp. 227-228. ISBN 0780351355 (doi:10.1109/MWSYM.1999.779463)

Wasige, E., Kompa, G., Van Raay, F., Scholz, W., Rangelow, I.W., Kassing, R., Bertram, S., and Hudek, P. (1999) GaAs FET characterization in a quasi-monolithic Si environment. In: 1999 IEEE MTT-S International Microwave Symposium, Anaheim, CA, USA, 13-19 Jun 1999, pp. 1889-1891. ISBN 0780351355 (doi:10.1109/MWSYM.1999.780342)

Wasige, E., and Kompa, G. (1997) Air bridge based planar hybrid technology for microwave and millimeterwave applications. In: 27th European Microwave Conference, Jerusalem, Israel, Sep 1997, pp. 375-378.

Wasige, E., Kompa, G., van Raay, F., Rangelow, I.W., Scholz, W., Shi, F., Kassing, R., Meyer, R., and Amann, M.-C. (1997) Air bridge based planar hybrid technology for microwave and millimeterwave applications. In: IEEE MTT-S International Microwave Symposium, Denver, CO, USA, 8-13 Jun 1997, pp. 925-928. (doi:10.1109/MWSYM.1997.602951)

Wasige, E., and Kompa, G. (1996) A new silicon micro-test fixture facilitates the reusability of accurately characterized low power FET devices. In: 26th European Microwave Conference, Prague, Czech Republic, 1996, pp. 521-523.

This list was generated on Tue Jun 30 21:30:16 2015 BST.