Dr David Moran

  • Lord Kelvin Adam Smith Fellow in Sensor Systems (Electronic and Nanoscale Engineering)

telephone: 01413304106
email: David.Moran@glasgow.ac.uk

R526 Level 5
Eng -Micro & Nanotechnology
Rankine Building
Glasgow G12 8LT


David is a Lord Kelvin Adam Smith Fellow and lead of the Nano-Electronic Diamond Devices and Systems group.

His research expertise lies in the areas of nano-fabrication, device design and simulation, and material and device high frequency characterisation.

All publications | View selected publications

List all by: Type | Date

Jump to: 2013 | 2012 | 2011 | 2010 | 2009 | 2008 | 2007 | 2006 | 2005 | 2004 | 2003 | 2002
Number of items: 62.

2013

Greer, A. I.M., Seunarine, K., Khokhar, A. Z., MacLaren, I., Brydone, A. S., Moran, D. A.J., and Gadegaard, N. (2013) Increased efficiency of direct nanoimprinting on planar and curved bulk titanium through surface modification. Microelectronic Engineering, 112 . pp. 67-73. ISSN 0167-9317 (doi:10.1016/j.mee.2013.05.016)

Russell, S. A. O., Cao, L., Qi, D., Tallaire, A., Crawford, K. G., Wee, A. T. S., and Moran, D. A. J. (2013) Surface transfer doping of diamond by MoO3: a combined spectroscopic and Hall measurement study. Applied Physics Letters, 103 (20). p. 202112. ISSN 0003-6951 (doi:10.1063/1.4832455)

2012

Russell, S., Sharabi, S., Tallaire, A., and Moran, D. (2012) Hydrogen-terminated diamond field-effect transistors with cutoff frequency of 53 GHz. IEEE Electron Device Letters, 33 (10). pp. 1471-1473. ISSN 0741-3106 (doi:10.1109/LED.2012.2210020)

Greer, A.I.M., and Moran, D.A.J. (2012) Charge dissipation layer optimisation for nano-scale electron-beam lithography pattern definition onto diamond. Diamond and Related Materials, 29 . pp. 13-17. ISSN 0925-9635 (doi:10.1016/j.diamond.2012.07.003)

Greer, A.I.M., Seunarine, K., Khokhar, A., Li, X., Moran, D., and Gadegaard, N. (2012) Direct nanopatterning of commercially pure titanium with ultra-nanocrystalline diamond stamps. Physica Status Solidi A: Applications and Materials Science, 209 (9). pp. 1721-1725. ISSN 1862-6300 (doi:10.1002/pssa.201200057)

2011

Moran, D.A.J., MacLaren, D., Porro, S., McLelland, H., John, P., and Wilson, J.I.B. (2011) Processing of 50 nm gate-length hydrogen terminated diamond FETs for high frequency and high power applications. Microelectronic Engineering, 88 (8). pp. 2691-2693. ISSN 0167-9317 (doi:10.1016/j.mee.2010.11.029)

Moran, D.A.J., Fox, O.J.L., McLelland, H., Russell, S., and May, P.W. (2011) Scaling of hydrogen-terminated diamond FETs to Sub-100-nm gate dimensions. IEEE Electron Device Letters, 32 (5). pp. 599-601. ISSN 0741-3106 (doi:10.1109/LED.2011.2114871)

2010

Moran, D., MacLaren, D.A., Porro, S., Hill, R., McLelland, H., John, P., and Wilson, J.I.B. (2010) Development and operation of 50nm gate length hydrogen terminated diamond field effect transistors. In: UK Diamond Research Conference, July 2010, Warwick, UK.

Moran, D., MacLaren, D.A., Porro, S., McLelland, H., John, P., and Wilson, J.I.B. (2010) Processing of 50nm gate-length hydrogen terminated diamond FETs for high frequency and high power applications. In: Micro and Nano Engineering Conference, 19-22 Sep 2010, Genoa, Italy.

2009

Hill, R.J.W. et al. (2009) Deep sub-micron and self-aligned flatband III–V MOSFETs. In: Device Research Conference, 2009 (DRC 2009), 22-24 Jun 2009, University Park, PA, USA.

Freescale Semiconductor, Inc. (2009) III-V MOSFET Fabrication and Device (Fabrication process of e.g. group III-V MOSFET for nano complementary metal oxide semiconductor application, involves heat treating metal contact structure to produce alloy region within semiconductor substrate). .

Bentley, S., Li, X., Moran, D., and Thayne, I.G. (2009) Two methods of realising 10 nm T-gate lithography. Microelectronic Engineering, 86 (4-6). pp. 1067-1070. ISSN 0167-9317 (doi:10.1016/j.mee.2008.12.029)

Longo, P., Craven, A.J., Holland, M.C., Moran, D.A.J., and Thayne, I.G. (2009) A nanoanalytical investigation of high-k dielectric gate stacks for GaAs based MOSFET devices. Microelectronic Engineering, 86 (3). pp. 214-217. ISSN 0167-9317 (doi:10.1016/j.mee.2008.08.013 )

2008

Hill, R., Moran, D., Li, X., Macintyre, D.S., Thoms, S., Asenov, A., Droopad, R., Passlack, M., and Thayne, I. (2008) III-V MOSFETs: a possible solution for sub-22 nm CMOS nFETs. In: 17th European Heterostructure Technology Workshop, Nov 2008, Venice, Italy.

Hill, R.J.W. et al. (2008) 1 μm gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737μS/μm. Electronics Letters, 44 . pp. 498-500. ISSN 0013-5194 (doi:10.1049/el:20080470)

Bentley, S., Li, X., Moran, D. A. J., and Thayne, I. G. (2008) Fabrication of 22 nm T-gates for HEMT applications. Microelectronic Engineering, 85 (5-6). pp. 1375-1378. ISSN 0167-9317 (doi:10.1016/j.mee.2008.01.058)

Hill, R. J. W. et al. (2008) 1 mu m gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 mu S/mm. Electronics Letters, 44 (7). pp. 498-499. ISSN 0013-5194 (doi:10.1049/el:20080470)

Hill, R.J.W., Moran, D.A.J., Li, X., Zhou, H., Macintyre, D.S., Thoms, S., Asenov, A., and Thayne, I.G. (2008) Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics. In: Proceedings of the IEEE Silicon Nanoelectronics Workshop, 15-16 June 2008, Honolulu, Hawaii. IEEE Computer Society, Piscataway, N.J., USA. ISBN 9781424420711

2007

Hill, R.J.W. et al. (2007) Enhancement-mode GaAs MOSFETs with an In0.3 Ga0.7As channel, a mobility of over 5000 cm2/V ·s, and transconductance of over 475 μS/μm. IEEE Electron Device Letters, 284 (12). pp. 1080-1082. ISSN 0741-3106 (doi:10.1109/LED.2007.910009)

Holland, M., Stanley, C.R., Reid, W., Hill, R.J.W., Moran, D.A.J., Thayne, I., Paterson, G.W., and Long, A.R. (2007) Ga2O3 grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors. Journal of Vacuum Science and Technology Part B: Microelectronics and Nanometer Structures, 25 (5). pp. 1706-1710. ISSN 1071-1023 (doi:10.1116/1.2778690)

Hill, R.J.W., Moran, D.A.J., Li, X., Zhou, H., Macintyre, D., Thoms, S., Droopad, R., Passlack, M., and Thayne, I.G. (2007) 180 nm metal gate, high-k dielectric, implant free III-V MOSFETs with transconductance of over 425μS/μm. Electronics Letters, 43 . pp. 543-545. ISSN 0013-5194 (doi:10.1049/el:20070427)

Passlack, M. et al. (2007) High mobility III-V MOSFETs for RF and digital applications. In: IEEE International Electron Devices Meeting (IEDM 2007), 10-12 December 2007, Washington DC, USA.

Kalna, K., Wilson, J.A., Moran, D.A.J., Hill, R.J.W., Long, A.R., Droopad, R., Passlack, M., Thayne, I.G., and Asenov, A. (2007) Monte Carlo simulations of high-performance implant free In0.3Ga0.7 nano-MOSFETs for low-power CMOS applications. IEEE Transactions on Nanotechnology, 6 (1). pp. 106-112. ISSN 1536-125X (doi:10.1109/TNANO.2006.888543)

Moran, D.A.J. et al. (2007) Sub-micron, metal gate, high-к dielectric, implant-free, enhancement-mode III-V MOSFETs. In: 37th European Solid State Device Research Conference (ESSDERC 2007), 11-13 September 2007, Munich, Germany.

Rajagopalan, K. et al. (2007) Enhancement mode n-MOSFET with high-k dielectric on GaAs substrate. In: IEEE 65th Annual Device Research Conference, 18-20 June 2007, South Bend, Indiana, USA.

Thayne, I., Elgaid, K., Moran, D., Cao, X., Boyd, E., McLelland, H., Holland, M., Thoms, S., and Stanley, C. (2007) 50 nm metamorphic GaAs and InPHEMTs. Thin Solid Films, 515 . pp. 4373-4377. (doi:10.1016/j.tsf.2006.07.104)

2006

Paterson, G., Wilson, J.A., Moran, D., Hill, R., Long, A.R., Thayne, I., Passlack, M., and Droopad, R. (2006) Gallium oxide (Ga2O3)on gallium arsenide - A low defect, high-K system for future devices. Materials Science and Engineering B: Advanced Functional Solid-State Materials, 135 (3). pp. 277-281. ISSN 0921-5107 (doi:10.1016/j.mseb.2006.08.026)

Moran, D.A.J., McLelland, H., Elgaid, K., Whyte, G., Stanley, C.R., and Thayne, I. (2006) 50-nm self-aligned and 'standard' T-gate InP pHEMT comparison: the influence of parasitics on performance at the 50-nm node. IEEE Transactions on Electron Devices, 53 (12). pp. 2920-2925. ISSN 0018-9383 (doi:10.1109/TED.2006.885674)

Elgaid, K., Holland, M., McLelland, H., Moran, D., Thoms, S., Stanley, C., and Thayne, I. (2006) 50nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications. In: Indium Phosphide & Related Materials, Princeton, USA.

Kalna, K., Hill, R., Wilson, J., Moran, D., Long, A., Asenov, A., and Thayne, I. (2006) Monte Carlo simulation of sub-30 nm high indium implant free III-V MOSFETs for low power digital applications. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.

Kalna, K., Wilson, J., Moran, D., Hill, R., Long, A., Droopad, R., Passlack, M., Thayne, I., and Asenov, A. (2006) MC simulation of high performance InGaAs nano-MOSFETs for low power CMOS applications. In: IEEE 2006 Silicon Nanoelectronics Workshop, Honolulu.

Longo, P., Scott, J., Hill, R., Moran, D., Craven, A., and Thayne, I. (2006) Elemental mapping of III-V MOSFET structures using energy filtered transmission electron microscopy. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.

Moran, D., McLelland, H., Elgaid, K., Stanley, C., and Thayne, I. (2006) Scaling of self-aligned T-gate InGaAs/InAlAs HEMT technology. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.

Moran, D., McLelland, H., Elgaid, K., Whyte, G., Stanley, C., and Thayne, I. (2006) 50-nm self-aligned and "standard" T-gate InP pHEMT comparison: The influence of parasitics on performance at the 50-nm node. IEEE Transactions on Electron Devices, 53 . pp. 2920-2925. (doi:10.1109/TED.2006.885674)

Thayne, I., Elgaid, K., Holland, M., McLelland, H., Moran, D.A.J., Thoms, S., and Stanley, C. (2006) 50 nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications. In: 2006 International Conference on Indium Phosphide and Related Materials, 7-11 May 2006, Princeton, New Jersey, USA.

Thayne, I. et al. (2006) III-V MOSFETs for Digital Applications: an overview. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.

Wilson, J., Paterson, G., Moran, D., Hill, R., Thayne, I., and Long, A. (2006) III-V MOS systems - charge control and transport. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.

2005

Elgaid, K., McLelland, H., Holland, M., Moran, D.A.J., Stanley, C.R., and Thayne, I.G. (2005) 50-nm T-gate metamorphic GaAs HEMTs with fT of 440 GHz and noise figure of 0.7 dB at 26 GHz. IEEE Electron Device Letters, 26 (11). pp. 784-786. ISSN 0741-3106 (doi:10.1109/LED.2005.857716)

Elgaid, K., McLelland, H., Holland, M., Moran, D., Stanley, C., and Thayne, I. (2005) 50-nm T-gate metamorphic GaAs HEMTs with f(T) of 440 GHz and noise figure of 0.7 dB at 26 GHz. IEEE Electron Device Letters, 26 . pp. 784-786. (doi:10.1109/LED.2005.857716)

Elgaid, K., Moran, D., McLelland, H., Holland, M., and Thayne, I. (2005) Low noise high performance 50nm T-GATE metamorphic HEMT with cut-off frequency FTOF 440Ghz for millimeterwave imaging receivers applications. In: 2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALSConference proceedings - indium phosphide and related materials, NEW YORK.

Elgaid, K., Moran, D., McLelland, H., Holland, M., and Thayne, I.G. (2005) Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency fT of 440 GHz for millimeterwave imaging receivers applications. In: IEEE International Conference on Indium Phosphide and Related Materials, 2005, 8-12 May 2005, Glasgow, Scotland.

Moran, D., Cao, X., Elgaid, K., Boyd, E., Chen, Y., Thoms, S., McLelland, H., Stanley, C., Holland, M., and Thayne, I. (2005) Sub 100nm III-V HEMT technology: Approaching the Terahertz Regime. In: International Workshop on Terahertz Technology, Osaka, Japan.

Thayne, I., Elgaid, K., Moran, D., Cao, X., Boyd, E., McLelland, H., Holland, M., Thoms, S., and Stanley, C. (2005) 50nm Metamorphic GaAs and InP HEMTs. In: 3rd International Conference for Advanced Materials and Technologies, Singapore.

2004

Boyd, E., Thoms, S., Moran, D., Elgaid, K., Cao, X., Holland, M., Stanley, C., and Thayne, I. (2004) Fabrication of very high performance 50nm T-gate metamorphic GaAs HEMT's with exceptional uniformity. In: European Gallium Arsenide and other Compound Semiconductors Application Symposium,GaAs 2004, Amsterdam, The Netherlands.

Boyd, E., Zhou, H., McLelland, H., Moran, D., Thoms, S., and Thayne, I. (2004) Fabrication of 30nm T-gate high electron mobility transistors using bi-layer of PMMA and UVIII. In: Conference on Optoelectronic and Microelectronic materials and devices 2004, Brisbane, Australia.

Boyd, E., Zhou, H., McLelland, H., Moran, D.A.J., Thoms, S., and Thayne, I.G. (2004) Fabrication of 30nm T-gate high electron mobility transistors using a bi-Layer of PMMA and UVIII. In: 2004 IEEE Conference on Optoelectronic and Microelectronic Materials and Devices, 8-10 December 2004, Brisbane, Australia.

Elgaid, K., McLelland, H., Cao, X., Boyd, E., Moran, D., Thoms, S., Zhou, H., Wilkinson, C., Stanley, C., and Thayne, I. (2004) An array-based design methodology for the realisation of 94GHz MMMIC amplifiers. In: European Gallium Arsenide and other Compound Semiconductors Application Symposium,GaAs 2004, Amsterdam, The Netherlands.

Moran, D.A.J., Boyd, E., Elgaid, K., McEwan, F., McLelland, H., Stanley, C.R., and Thayne, I.G. (2004) Self-aligned T-gate InP HEMT realisation through double delta doping and a non-annealed ohmic process. Microelectronic Engineering, 73-74 . pp. 814-817. ISSN 0167-9317 (doi:10.1016/j.mee.2004.03.057)

Moran, D.A.J., Boyd, E., McEwan, F., McLelland, H., Stanley, C.R., and Thayne, I.G. (2004) Sub 100nm T-Gate uniformity in InP HEMT technology. In: International Conference on Compound Semiconductor Manufacturing Technology, 3-6 May 2004, Miami, Florida, USA.

Moran, D., Boyd, E., Elgaid, K., McEwan, F., McLelland, H., Stanley, C., and Thayne, I. (2004) Self-aligned T-gate InPHEMT realisation through double delta doping and a non-annealed ohmic process. Microelectronic Engineering, 73-4 . pp. 814-817. (doi:10.1016/j.mee.2004.03.057)

Moran, D., Boyd, E., Elgaid, K., McLelland, H., Stanley, C., and Thayne, I. (2004) 50nm T-gate lattice-matched InP HEMTs with fT of 430GHz using non-annealed ohmic contact process. In: European Gallium Arsenide and other Compound Semiconductors Application Symposium,GaAs 2004, Amsterdam, The Netherlands.

Thayne, I., Cao, X., Moran, D.A.J., Boyd, E., Elgaid, K., McLelland, H., Holland, M., Thoms, S., and Stanley, C. (2004) Very high performance 50 nm T-gate III-V HEMTs enabled by robust nanofabrication technologies. In: 4th IEEE Conference on Nanotechnology 2004, 16-19 August 2004, Munich, Germany.

Thayne, I., Cao, X., Moran, D., Boyd, E., Elgaid, K., McLelland, H., Holland, M., Thoms, S., and Stanley, C. (2004) Very high performance 50nm T-gate III-V HEMTs enabled by robust nanofabrication technologies. In: 4th IEEE Conference on Nanotechnology, Munich, Germany.

Thoms, S., Macintyre, D.S., Moran, D., and Thayne, I. (2004) Imprint lithography issues in the fabrication of high electron mobility transistors. Journal of Vacuum Science and Technology Part B: Microelectronics and Nanometer Structures, 22 (6). pp. 3271-3274. ISSN 1071-1023 (doi:10.1116/1.1821504)

2003

Chen, Y., MacIntyre, D.S., Cao, X., Boyd, E., Moran, D.A.J., McLelland, H., Holland, M., Stanley, C.R., Thayne, I., and Thoms, S. (2003) Fabrication of ultrashort T gates using a PMMA/LOR/UVIII resist stack. Journal of Vacuum Science and Technology Part B: Microelectronics and Nanometer Structures, 21 (6). pp. 3012-3016. ISSN 1071-1023 (doi:10.1116/1.1629292)

Moran, D., Boyd, E., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D.S., Thoms, S., Stanley, C.R., and Thayne, I.G. (2003) Novel technologies for the realisation of GaAs pHEMTs with 120 nm self-aligned and nanoimprinted T-gates. Microelectronic Engineering, 67-89 . pp. 769-774. ISSN 0167-9317 (doi:10.1016/S0167-9317(03)00137-0)

Boyd, E., Moran, D., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D., Thorns, S., Stanley, C., and Thayne, L. (2003) 120 nm gate length E-beam and nanoimprint T-gate GaAs pHEMTs utilising non-annealed ohmic contacts. Compound Semiconductors 2002, 174 . pp. 291-294.

Chen, Y., Macintyre, D., Boyd, E., Moran, D., Thayne, I., and Thoms, S. (2003) High electron mobility transistors fabricated by nanoimprint lithography. Microelectronic Engineering, 67-8 . pp. 189-195. (doi:10.1016/S0167-9317(03)00183-7)

Macintyre, D.S., Chen, Y., Gourlay, D., Boyd, E., Moran, D., Cao, X., Elgaid, K., Stanley, C.R., Thayne, I., and Thoms, S. (2003) Nanoimprint lithography process optimization for the fabrication of high electron mobility transistors. Journal of Vacuum Science and Technology Part B: Microelectronics and Nanometer Structures, 21 (6). pp. 2783-2787. ISSN 1071-1023 (doi:10.1116/1.1629719)

Moran, D., Boyd, E., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D., Thoms, S., Stanley, C., and Thayne, I. (2003) Novel technologies for the realisation of GaAs pHEMTs with 120 nm self-aligned and nanoimprinted T-gates. Microelectronic Engineering, 67-8 . pp. 769-774. (doi:10.1016/S0167-9317(03)00137-0)

Moran, D.A.J., Kalna, K., Boyd, E., McEwan, F., McLelland, H., Zhuang, L.L., Stanley, C.R., Asenov, A., and Thayne, I. (2003) Self-aligned 0.12 /spl mu/m T-gate In/sub .53/Ga/sub .47/As/In/sub .52/Al/sub .48/As HEMT technology utilising a non-annealed ohmic contact strategy. In: ESSDERC '03 : 33rd Conference on European Solid-State Device Research, 16-18 September 2003, Estoril, Portugal.

2002

Chen, Y., Macintyre, D., Boyd, E., Moran, D., Thayne, I., and Thoms, S. (2002) Fabrication of high electron mobility transistors with T-gates by nanoimprint lithography. Journal of Vacuum Science and Technology Part B: Microelectronics and Nanometer Structures, 20 (6). pp. 2887-2890. ISSN 1071-1023 (doi:10.1116/1.1520564)

This list was generated on Tue Sep 2 09:45:05 2014 BST.
Number of items: 62.

Article

Greer, A. I.M., Seunarine, K., Khokhar, A. Z., MacLaren, I., Brydone, A. S., Moran, D. A.J., and Gadegaard, N. (2013) Increased efficiency of direct nanoimprinting on planar and curved bulk titanium through surface modification. Microelectronic Engineering, 112 . pp. 67-73. ISSN 0167-9317 (doi:10.1016/j.mee.2013.05.016)

Russell, S. A. O., Cao, L., Qi, D., Tallaire, A., Crawford, K. G., Wee, A. T. S., and Moran, D. A. J. (2013) Surface transfer doping of diamond by MoO3: a combined spectroscopic and Hall measurement study. Applied Physics Letters, 103 (20). p. 202112. ISSN 0003-6951 (doi:10.1063/1.4832455)

Russell, S., Sharabi, S., Tallaire, A., and Moran, D. (2012) Hydrogen-terminated diamond field-effect transistors with cutoff frequency of 53 GHz. IEEE Electron Device Letters, 33 (10). pp. 1471-1473. ISSN 0741-3106 (doi:10.1109/LED.2012.2210020)

Greer, A.I.M., and Moran, D.A.J. (2012) Charge dissipation layer optimisation for nano-scale electron-beam lithography pattern definition onto diamond. Diamond and Related Materials, 29 . pp. 13-17. ISSN 0925-9635 (doi:10.1016/j.diamond.2012.07.003)

Greer, A.I.M., Seunarine, K., Khokhar, A., Li, X., Moran, D., and Gadegaard, N. (2012) Direct nanopatterning of commercially pure titanium with ultra-nanocrystalline diamond stamps. Physica Status Solidi A: Applications and Materials Science, 209 (9). pp. 1721-1725. ISSN 1862-6300 (doi:10.1002/pssa.201200057)

Moran, D.A.J., MacLaren, D., Porro, S., McLelland, H., John, P., and Wilson, J.I.B. (2011) Processing of 50 nm gate-length hydrogen terminated diamond FETs for high frequency and high power applications. Microelectronic Engineering, 88 (8). pp. 2691-2693. ISSN 0167-9317 (doi:10.1016/j.mee.2010.11.029)

Moran, D.A.J., Fox, O.J.L., McLelland, H., Russell, S., and May, P.W. (2011) Scaling of hydrogen-terminated diamond FETs to Sub-100-nm gate dimensions. IEEE Electron Device Letters, 32 (5). pp. 599-601. ISSN 0741-3106 (doi:10.1109/LED.2011.2114871)

Bentley, S., Li, X., Moran, D., and Thayne, I.G. (2009) Two methods of realising 10 nm T-gate lithography. Microelectronic Engineering, 86 (4-6). pp. 1067-1070. ISSN 0167-9317 (doi:10.1016/j.mee.2008.12.029)

Longo, P., Craven, A.J., Holland, M.C., Moran, D.A.J., and Thayne, I.G. (2009) A nanoanalytical investigation of high-k dielectric gate stacks for GaAs based MOSFET devices. Microelectronic Engineering, 86 (3). pp. 214-217. ISSN 0167-9317 (doi:10.1016/j.mee.2008.08.013 )

Hill, R.J.W. et al. (2008) 1 μm gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737μS/μm. Electronics Letters, 44 . pp. 498-500. ISSN 0013-5194 (doi:10.1049/el:20080470)

Bentley, S., Li, X., Moran, D. A. J., and Thayne, I. G. (2008) Fabrication of 22 nm T-gates for HEMT applications. Microelectronic Engineering, 85 (5-6). pp. 1375-1378. ISSN 0167-9317 (doi:10.1016/j.mee.2008.01.058)

Hill, R. J. W. et al. (2008) 1 mu m gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 mu S/mm. Electronics Letters, 44 (7). pp. 498-499. ISSN 0013-5194 (doi:10.1049/el:20080470)

Hill, R.J.W. et al. (2007) Enhancement-mode GaAs MOSFETs with an In0.3 Ga0.7As channel, a mobility of over 5000 cm2/V ·s, and transconductance of over 475 μS/μm. IEEE Electron Device Letters, 284 (12). pp. 1080-1082. ISSN 0741-3106 (doi:10.1109/LED.2007.910009)

Holland, M., Stanley, C.R., Reid, W., Hill, R.J.W., Moran, D.A.J., Thayne, I., Paterson, G.W., and Long, A.R. (2007) Ga2O3 grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors. Journal of Vacuum Science and Technology Part B: Microelectronics and Nanometer Structures, 25 (5). pp. 1706-1710. ISSN 1071-1023 (doi:10.1116/1.2778690)

Hill, R.J.W., Moran, D.A.J., Li, X., Zhou, H., Macintyre, D., Thoms, S., Droopad, R., Passlack, M., and Thayne, I.G. (2007) 180 nm metal gate, high-k dielectric, implant free III-V MOSFETs with transconductance of over 425μS/μm. Electronics Letters, 43 . pp. 543-545. ISSN 0013-5194 (doi:10.1049/el:20070427)

Kalna, K., Wilson, J.A., Moran, D.A.J., Hill, R.J.W., Long, A.R., Droopad, R., Passlack, M., Thayne, I.G., and Asenov, A. (2007) Monte Carlo simulations of high-performance implant free In0.3Ga0.7 nano-MOSFETs for low-power CMOS applications. IEEE Transactions on Nanotechnology, 6 (1). pp. 106-112. ISSN 1536-125X (doi:10.1109/TNANO.2006.888543)

Thayne, I., Elgaid, K., Moran, D., Cao, X., Boyd, E., McLelland, H., Holland, M., Thoms, S., and Stanley, C. (2007) 50 nm metamorphic GaAs and InPHEMTs. Thin Solid Films, 515 . pp. 4373-4377. (doi:10.1016/j.tsf.2006.07.104)

Paterson, G., Wilson, J.A., Moran, D., Hill, R., Long, A.R., Thayne, I., Passlack, M., and Droopad, R. (2006) Gallium oxide (Ga2O3)on gallium arsenide - A low defect, high-K system for future devices. Materials Science and Engineering B: Advanced Functional Solid-State Materials, 135 (3). pp. 277-281. ISSN 0921-5107 (doi:10.1016/j.mseb.2006.08.026)

Moran, D.A.J., McLelland, H., Elgaid, K., Whyte, G., Stanley, C.R., and Thayne, I. (2006) 50-nm self-aligned and 'standard' T-gate InP pHEMT comparison: the influence of parasitics on performance at the 50-nm node. IEEE Transactions on Electron Devices, 53 (12). pp. 2920-2925. ISSN 0018-9383 (doi:10.1109/TED.2006.885674)

Moran, D., McLelland, H., Elgaid, K., Whyte, G., Stanley, C., and Thayne, I. (2006) 50-nm self-aligned and "standard" T-gate InP pHEMT comparison: The influence of parasitics on performance at the 50-nm node. IEEE Transactions on Electron Devices, 53 . pp. 2920-2925. (doi:10.1109/TED.2006.885674)

Elgaid, K., McLelland, H., Holland, M., Moran, D.A.J., Stanley, C.R., and Thayne, I.G. (2005) 50-nm T-gate metamorphic GaAs HEMTs with fT of 440 GHz and noise figure of 0.7 dB at 26 GHz. IEEE Electron Device Letters, 26 (11). pp. 784-786. ISSN 0741-3106 (doi:10.1109/LED.2005.857716)

Elgaid, K., McLelland, H., Holland, M., Moran, D., Stanley, C., and Thayne, I. (2005) 50-nm T-gate metamorphic GaAs HEMTs with f(T) of 440 GHz and noise figure of 0.7 dB at 26 GHz. IEEE Electron Device Letters, 26 . pp. 784-786. (doi:10.1109/LED.2005.857716)

Moran, D.A.J., Boyd, E., Elgaid, K., McEwan, F., McLelland, H., Stanley, C.R., and Thayne, I.G. (2004) Self-aligned T-gate InP HEMT realisation through double delta doping and a non-annealed ohmic process. Microelectronic Engineering, 73-74 . pp. 814-817. ISSN 0167-9317 (doi:10.1016/j.mee.2004.03.057)

Moran, D., Boyd, E., Elgaid, K., McEwan, F., McLelland, H., Stanley, C., and Thayne, I. (2004) Self-aligned T-gate InPHEMT realisation through double delta doping and a non-annealed ohmic process. Microelectronic Engineering, 73-4 . pp. 814-817. (doi:10.1016/j.mee.2004.03.057)

Thoms, S., Macintyre, D.S., Moran, D., and Thayne, I. (2004) Imprint lithography issues in the fabrication of high electron mobility transistors. Journal of Vacuum Science and Technology Part B: Microelectronics and Nanometer Structures, 22 (6). pp. 3271-3274. ISSN 1071-1023 (doi:10.1116/1.1821504)

Chen, Y., MacIntyre, D.S., Cao, X., Boyd, E., Moran, D.A.J., McLelland, H., Holland, M., Stanley, C.R., Thayne, I., and Thoms, S. (2003) Fabrication of ultrashort T gates using a PMMA/LOR/UVIII resist stack. Journal of Vacuum Science and Technology Part B: Microelectronics and Nanometer Structures, 21 (6). pp. 3012-3016. ISSN 1071-1023 (doi:10.1116/1.1629292)

Moran, D., Boyd, E., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D.S., Thoms, S., Stanley, C.R., and Thayne, I.G. (2003) Novel technologies for the realisation of GaAs pHEMTs with 120 nm self-aligned and nanoimprinted T-gates. Microelectronic Engineering, 67-89 . pp. 769-774. ISSN 0167-9317 (doi:10.1016/S0167-9317(03)00137-0)

Boyd, E., Moran, D., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D., Thorns, S., Stanley, C., and Thayne, L. (2003) 120 nm gate length E-beam and nanoimprint T-gate GaAs pHEMTs utilising non-annealed ohmic contacts. Compound Semiconductors 2002, 174 . pp. 291-294.

Chen, Y., Macintyre, D., Boyd, E., Moran, D., Thayne, I., and Thoms, S. (2003) High electron mobility transistors fabricated by nanoimprint lithography. Microelectronic Engineering, 67-8 . pp. 189-195. (doi:10.1016/S0167-9317(03)00183-7)

Macintyre, D.S., Chen, Y., Gourlay, D., Boyd, E., Moran, D., Cao, X., Elgaid, K., Stanley, C.R., Thayne, I., and Thoms, S. (2003) Nanoimprint lithography process optimization for the fabrication of high electron mobility transistors. Journal of Vacuum Science and Technology Part B: Microelectronics and Nanometer Structures, 21 (6). pp. 2783-2787. ISSN 1071-1023 (doi:10.1116/1.1629719)

Moran, D., Boyd, E., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D., Thoms, S., Stanley, C., and Thayne, I. (2003) Novel technologies for the realisation of GaAs pHEMTs with 120 nm self-aligned and nanoimprinted T-gates. Microelectronic Engineering, 67-8 . pp. 769-774. (doi:10.1016/S0167-9317(03)00137-0)

Chen, Y., Macintyre, D., Boyd, E., Moran, D., Thayne, I., and Thoms, S. (2002) Fabrication of high electron mobility transistors with T-gates by nanoimprint lithography. Journal of Vacuum Science and Technology Part B: Microelectronics and Nanometer Structures, 20 (6). pp. 2887-2890. ISSN 1071-1023 (doi:10.1116/1.1520564)

Book Section

Hill, R.J.W., Moran, D.A.J., Li, X., Zhou, H., Macintyre, D.S., Thoms, S., Asenov, A., and Thayne, I.G. (2008) Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics. In: Proceedings of the IEEE Silicon Nanoelectronics Workshop, 15-16 June 2008, Honolulu, Hawaii. IEEE Computer Society, Piscataway, N.J., USA. ISBN 9781424420711

Conference Proceedings

Moran, D., MacLaren, D.A., Porro, S., Hill, R., McLelland, H., John, P., and Wilson, J.I.B. (2010) Development and operation of 50nm gate length hydrogen terminated diamond field effect transistors. In: UK Diamond Research Conference, July 2010, Warwick, UK.

Moran, D., MacLaren, D.A., Porro, S., McLelland, H., John, P., and Wilson, J.I.B. (2010) Processing of 50nm gate-length hydrogen terminated diamond FETs for high frequency and high power applications. In: Micro and Nano Engineering Conference, 19-22 Sep 2010, Genoa, Italy.

Hill, R.J.W. et al. (2009) Deep sub-micron and self-aligned flatband III–V MOSFETs. In: Device Research Conference, 2009 (DRC 2009), 22-24 Jun 2009, University Park, PA, USA.

Hill, R., Moran, D., Li, X., Macintyre, D.S., Thoms, S., Asenov, A., Droopad, R., Passlack, M., and Thayne, I. (2008) III-V MOSFETs: a possible solution for sub-22 nm CMOS nFETs. In: 17th European Heterostructure Technology Workshop, Nov 2008, Venice, Italy.

Passlack, M. et al. (2007) High mobility III-V MOSFETs for RF and digital applications. In: IEEE International Electron Devices Meeting (IEDM 2007), 10-12 December 2007, Washington DC, USA.

Moran, D.A.J. et al. (2007) Sub-micron, metal gate, high-к dielectric, implant-free, enhancement-mode III-V MOSFETs. In: 37th European Solid State Device Research Conference (ESSDERC 2007), 11-13 September 2007, Munich, Germany.

Rajagopalan, K. et al. (2007) Enhancement mode n-MOSFET with high-k dielectric on GaAs substrate. In: IEEE 65th Annual Device Research Conference, 18-20 June 2007, South Bend, Indiana, USA.

Elgaid, K., Holland, M., McLelland, H., Moran, D., Thoms, S., Stanley, C., and Thayne, I. (2006) 50nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications. In: Indium Phosphide & Related Materials, Princeton, USA.

Kalna, K., Hill, R., Wilson, J., Moran, D., Long, A., Asenov, A., and Thayne, I. (2006) Monte Carlo simulation of sub-30 nm high indium implant free III-V MOSFETs for low power digital applications. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.

Kalna, K., Wilson, J., Moran, D., Hill, R., Long, A., Droopad, R., Passlack, M., Thayne, I., and Asenov, A. (2006) MC simulation of high performance InGaAs nano-MOSFETs for low power CMOS applications. In: IEEE 2006 Silicon Nanoelectronics Workshop, Honolulu.

Longo, P., Scott, J., Hill, R., Moran, D., Craven, A., and Thayne, I. (2006) Elemental mapping of III-V MOSFET structures using energy filtered transmission electron microscopy. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.

Moran, D., McLelland, H., Elgaid, K., Stanley, C., and Thayne, I. (2006) Scaling of self-aligned T-gate InGaAs/InAlAs HEMT technology. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.

Thayne, I., Elgaid, K., Holland, M., McLelland, H., Moran, D.A.J., Thoms, S., and Stanley, C. (2006) 50 nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications. In: 2006 International Conference on Indium Phosphide and Related Materials, 7-11 May 2006, Princeton, New Jersey, USA.

Thayne, I. et al. (2006) III-V MOSFETs for Digital Applications: an overview. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.

Wilson, J., Paterson, G., Moran, D., Hill, R., Thayne, I., and Long, A. (2006) III-V MOS systems - charge control and transport. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.

Elgaid, K., Moran, D., McLelland, H., Holland, M., and Thayne, I. (2005) Low noise high performance 50nm T-GATE metamorphic HEMT with cut-off frequency FTOF 440Ghz for millimeterwave imaging receivers applications. In: 2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALSConference proceedings - indium phosphide and related materials, NEW YORK.

Elgaid, K., Moran, D., McLelland, H., Holland, M., and Thayne, I.G. (2005) Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency fT of 440 GHz for millimeterwave imaging receivers applications. In: IEEE International Conference on Indium Phosphide and Related Materials, 2005, 8-12 May 2005, Glasgow, Scotland.

Moran, D., Cao, X., Elgaid, K., Boyd, E., Chen, Y., Thoms, S., McLelland, H., Stanley, C., Holland, M., and Thayne, I. (2005) Sub 100nm III-V HEMT technology: Approaching the Terahertz Regime. In: International Workshop on Terahertz Technology, Osaka, Japan.

Thayne, I., Elgaid, K., Moran, D., Cao, X., Boyd, E., McLelland, H., Holland, M., Thoms, S., and Stanley, C. (2005) 50nm Metamorphic GaAs and InP HEMTs. In: 3rd International Conference for Advanced Materials and Technologies, Singapore.

Boyd, E., Thoms, S., Moran, D., Elgaid, K., Cao, X., Holland, M., Stanley, C., and Thayne, I. (2004) Fabrication of very high performance 50nm T-gate metamorphic GaAs HEMT's with exceptional uniformity. In: European Gallium Arsenide and other Compound Semiconductors Application Symposium,GaAs 2004, Amsterdam, The Netherlands.

Boyd, E., Zhou, H., McLelland, H., Moran, D., Thoms, S., and Thayne, I. (2004) Fabrication of 30nm T-gate high electron mobility transistors using bi-layer of PMMA and UVIII. In: Conference on Optoelectronic and Microelectronic materials and devices 2004, Brisbane, Australia.

Boyd, E., Zhou, H., McLelland, H., Moran, D.A.J., Thoms, S., and Thayne, I.G. (2004) Fabrication of 30nm T-gate high electron mobility transistors using a bi-Layer of PMMA and UVIII. In: 2004 IEEE Conference on Optoelectronic and Microelectronic Materials and Devices, 8-10 December 2004, Brisbane, Australia.

Elgaid, K., McLelland, H., Cao, X., Boyd, E., Moran, D., Thoms, S., Zhou, H., Wilkinson, C., Stanley, C., and Thayne, I. (2004) An array-based design methodology for the realisation of 94GHz MMMIC amplifiers. In: European Gallium Arsenide and other Compound Semiconductors Application Symposium,GaAs 2004, Amsterdam, The Netherlands.

Moran, D.A.J., Boyd, E., McEwan, F., McLelland, H., Stanley, C.R., and Thayne, I.G. (2004) Sub 100nm T-Gate uniformity in InP HEMT technology. In: International Conference on Compound Semiconductor Manufacturing Technology, 3-6 May 2004, Miami, Florida, USA.

Moran, D., Boyd, E., Elgaid, K., McLelland, H., Stanley, C., and Thayne, I. (2004) 50nm T-gate lattice-matched InP HEMTs with fT of 430GHz using non-annealed ohmic contact process. In: European Gallium Arsenide and other Compound Semiconductors Application Symposium,GaAs 2004, Amsterdam, The Netherlands.

Thayne, I., Cao, X., Moran, D.A.J., Boyd, E., Elgaid, K., McLelland, H., Holland, M., Thoms, S., and Stanley, C. (2004) Very high performance 50 nm T-gate III-V HEMTs enabled by robust nanofabrication technologies. In: 4th IEEE Conference on Nanotechnology 2004, 16-19 August 2004, Munich, Germany.

Thayne, I., Cao, X., Moran, D., Boyd, E., Elgaid, K., McLelland, H., Holland, M., Thoms, S., and Stanley, C. (2004) Very high performance 50nm T-gate III-V HEMTs enabled by robust nanofabrication technologies. In: 4th IEEE Conference on Nanotechnology, Munich, Germany.

Moran, D.A.J., Kalna, K., Boyd, E., McEwan, F., McLelland, H., Zhuang, L.L., Stanley, C.R., Asenov, A., and Thayne, I. (2003) Self-aligned 0.12 /spl mu/m T-gate In/sub .53/Ga/sub .47/As/In/sub .52/Al/sub .48/As HEMT technology utilising a non-annealed ohmic contact strategy. In: ESSDERC '03 : 33rd Conference on European Solid-State Device Research, 16-18 September 2003, Estoril, Portugal.

Patent

Freescale Semiconductor, Inc. (2009) III-V MOSFET Fabrication and Device (Fabrication process of e.g. group III-V MOSFET for nano complementary metal oxide semiconductor application, involves heat treating metal contact structure to produce alloy region within semiconductor substrate). .

This list was generated on Tue Sep 2 09:45:05 2014 BST.