Prof Asen Asenov
- James Watt Chair in Electrical Engineering (Electronic and Nanoscale Engineering)
telephone: 01413304790
email: Asen.Asenov@glasgow.ac.uk
Biography
Asen Asenov (FIEEE, FRSE) received his MSc degree in solid state physics from Sofia University, Bulgaria in 1979 and the PhD degree in physics from The Bulgarian Academy of Science in 1989.
He has ten years of industrial experience as a head of the Process and Device Modelling Group in Institute of Microelectronics, Sofia, developing one of the first integrated process and device CMOS simulators IMPEDANCE. In 1989–1991 he was a Visiting Professor at the Physics Department of Technical University of Munich, Germany. He joined the Department of Electronics and Electrical Engineering at the University of Glasgow in 1991, and served as a Head of Department in 1999-2003.
As a James Watt Professor in Electrical Engineering and a Leader of the Glasgow Device Modelling Group Asenov directs the development of 2D and 3D quantum mechanical, Monte Carlo and classical device simulators and their application in the design of advanced and novel CMOS devices. He has pioneered the simulations of statistical variability in nano-CMOS devices including random dopants, interface roughness and line edge roughness. He has over 550 publications and more than 160 invited talks in the above areas.
Professor Asenov is also a co-founder, CEO and a director of Gold Standard Simulations (GSS) Ltd. (www.goldstandardsimulations.com).
Professor Asenov is a fellow of the Royal Academy of Scotland, an IEEE Fellow and a member of the IEEE Electron Device Society Technology Computer-Aided Design Committee and of the BP Fellowship Committee. He is a co-author of European Nanoelectronics Advisory Council (ENIAC) Strategic Research Agenda (SRA) and acted on behave of EC as and reviewer for more than 15 EC projects and as an evaluator of several FP5, FP6 and FP7 calls. He has been a general chair, co-chair and TPC chair for many international conferences.
Research Interests
Leader of the Device Modeling Group. Research includes
(i) development of advanced drift diffusion, Monte Carlo and quantum transport simulations tools focused on atomic scale CMOS statistical variability and reliability;
(ii) statistical compact model extraction;
(iii) statistical circuit simulations;
(iv) development of nano-bio simulation tools.
Expertise
Semiconductors; semiconductor devices; advanced CMOS technology, devices and design.
Article
Bukhori, M.F., Kamsani, N.A., Asenov, A., and Nayan, N.A. (2012) Accurate capturing of the statistical aspect of NBTI/PBTI variability into statistical compact models. Microelectronics Journal, 43 (11). pp. 793-801. ISSN 0026-2692 (doi:10.1016/j.mejo.2012.07.004)
Wang, X., Roy, G., Saxod, O., Bajolet, A., Juge, A., and Asenov, A. (2012) Simulation study of dominant statistical variability sources in 32-nm high-k/metal gate CMOS. IEEE Electron Device Letters, 33 (5). pp. 643-645. ISSN 0741-3106 (doi:10.1109/LED.2012.2188268)
Markov, S., Cheng, B., and Asenov, A. (2012) Statistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions. IEEE Electron Device Letters, 33 (3). pp. 315-317. ISSN 0741-3106 (doi:10.1109/LED.2011.2179114)
Martinez, A., Aldegunde, M., Brown, A., Roy, S., and Asenov, A. (2012) NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants. Solid-State Electronics, 71 . pp. 101-105. ISSN 0038-1101 (doi:10.1016/j.sse.2011.10.028)
Moore, I., Millar, C., Roy, S., and Asenov, A. (2012) FET based nano-pore sensing: a 3D simulation study. Journal of Computational Electronics, 11 (3). pp. 266-271. ISSN 1569-8025 (doi:10.1007/s10825-012-0405-z)
Riddet, C., Watling, J., Chan, K., Parker, E.H.C., Whall, T.E., Leadley, D.R., and Asenov, A. (2012) Hole mobility in germanium as a function of substrate and channel orientation, strain, doping, and temperature. IEEE Transactions on Electron Devices, 59 (7). pp. 1878-1884. ISSN 0018-9383 (doi:10.1109/TED.2012.2194498)
Simpson, R.N., Bordas, S.P.A., Asenov, A., and Brown, A. (2012) Enriched residual free bubbles for semiconductor device simulation. Computational Mechanics, 50 (1). pp. 119-133. ISSN 0178-7675 (doi:10.1007/s00466-011-0658-6)
Benbakhti, B. et al. (2011) Numerical analysis of the new implant-free quantum-well CMOS: DualLogic approach. Solid-State Electronics, 63 (1). pp. 14-18. ISSN 0038-1101 (doi:10.1016/j.sse.2011.05.006)
Reid, D., Millar, C., Roy, S., and Asenov, A. (2011) Statistical enhancement of the evaluation of combined RDD- and LER-induced VT variability: lessons from 10⁵ sample simulations. IEEE Transactions on Electron Devices, 58 (8). 2257 -2265. ISSN 0018-9383 (doi:10.1109/TED.2011.2147317)
Garcia-Loureiro, A.J., Seoane, N., Aldegunde, M., Valin, R., Asenov, A., Martinez, A., and Kalna, K. (2011) Implementation of the density gradient quantum corrections for 3-D simulations of multigate nanoscaled transistors. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 30 (6). pp. 841-851. ISSN 0278-0070 (doi:10.1109/TCAD.2011.2107990)
Benbakhti, B., Kalna, K., Chan, K.H., Towie, E., Hellings, G., Eneman, G., De Meyer, K., Meuris, M., and Asenov, A. (2011) Design and analysis of the In0.53Ga0.47As implant-free quantum-well device structure. Microelectronic Engineering, 88 (4). pp. 358-361. ISSN 0167-9317 (doi:10.1016/j.mee.2010.11.019 )
Chan, K.H., Benbakhti, B., Riddet, C., Watling, J., and Asenov, A. (2011) Simulation study of the 20nm gate-length implant-free quantum well p-MOSFET. Microelectronic Engineering, 88 (4). pp. 362-365. ISSN 0167-9317 (doi:10.1016/j.mee.2010.09.025)
Chan, K.H., Riddet, C., Benbakhti, B., Watling, J., and Asenov, A. (2011) Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET. Microelectronic Engineering, 88 (4). pp. 362-365. ISSN 0167-9317 (doi:10.1016/j.mee.2010.09.025)
Wang, X., Roy, S., Brown, A.R., and Asenov, A. (2011) Impact of STI on statistical variability and reliability of decananometer MOSFETs. IEEE Electron Device Letters, 32 (4). pp. 479-481. ISSN 0741-3106 (doi:10.1109/LED.2011.2108256)
Watling, J.R., Riddet, C., Chan, K.H., and Asenov, A. (2011) Simulation of hole-mobility in doped relaxed and strained Ge. Microelectronic Engineering, 88 (4). pp. 462-464. ISSN 0167-9317 (doi:10.1016/j.mee.2010.11.017)
Riddet, C., Alexander, C., Brown, A., Roy, S., and Asenov, A. (2011) Simulation of "ab initio" quantum confinement scattering in UTB MOSFETs using three-dimensional ensemble Monte Carlo. IEEE Transactions on Electron Devices, 58 (3). pp. 600-608. ISSN 0018-9383 (doi:10.1109/TED.2010.2095422)
Aldegunde, M., Martinez, A., and Asenov, A. (2011) Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors. Journal of Applied Physics, 110 (9). 094518. ISSN 0021-8979 (doi:10.1063/1.3658856)
Cheng, B., Brown, A.R., and Asenov, A. (2011) Impact of NBTI/PBTI on SRAM stability degradation. IEEE Electron Device Letters, 32 (6). pp. 740-742. ISSN 0741-3106 (doi:10.1109/LED.2011.2136316)
Markov, S., Wang, X., Moezi, N., and Asenov, A. (2011) Drain current collapse in nanoscaled bulk MOSFETs due to random dopant compensation in the source/drain extensions. IEEE Transactions on Electron Devices, 58 (8). pp. 2385-2393. ISSN 0018-9383 (doi:10.1109/TED.2011.2152845)
Martinez, A., Aldegunde, M., Seoane, N., Brown, A.R., Barker, J.R., and Asenov, A. (2011) Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors. IEEE Transactions on Electron Devices, 58 (8). pp. 2209-2217. ISSN 0018-9383 (doi:10.1109/TED.2011.2157929)
Wang, X., Brown, A.R., Idris, N., Markov, S., Roy, G., and Asenov, A. (2011) Statistical threshold-voltage variability in scaled decananometer bulk HKMG MOSFETs: a full-scale 3-D simulation scaling study. IEEE Transactions on Electron Devices, 58 (8). pp. 2293-2301. ISSN 0018-9383 (doi:10.1109/TED.2011.2149531)
Reid, D., Millar, C., Roy, S., and Asenov, A. (2010) Understanding LER-induced MOSFET VT variability - part I: three-dimensional simulation of large statistical samples. IEEE Transactions on Electron Devices, 57 (11). pp. 2801-2807. ISSN 0018-9383 (doi:10.1109/TED.2010.2067731 )
Reid, D., Millar, C., Roy, S., and Asenov, A. (2010) Understanding LER-induced MOSFET VT variability - part II: reconstructing the distribution. IEEE Transactions on Electron Devices, 57 (11). pp. 2808-2813. ISSN 0018-9383 (doi:10.1109/TED.2010.2067732 )
Brown, A., Idris, N., Watling, J., and Asenov, A. (2010) Impact of metal gate granularity on threshold voltage variability: a full-scale 3D statistical simulation study. IEEE Electron Device Letters, 31 (11). pp. 1199-1201. ISSN 0741-3106 (doi:10.1109/LED.2010.2069080 )
Cheng, B., Brown, A.R., Roy, S., and Asenov, A, (2010) PBTI/NBTI-related variability in TB-SOI and DG MOSFETs. IEEE Electron Device Letters, 31 (5). pp. 408-410. ISSN 0741-3106 (doi:10.1109/LED.2010.2043812)
Bukhori, M.F., Roy, S., and Asenov, A. (2010) Simulation of statistical aspects of charge trapping and related degradation in bulk MOSFETs in the presence of random discrete dopants. IEEE Transactions on Electron Devices, 57 (4). pp. 795-803. ISSN 0018-9383 (doi:10.1109/TED.2010.2041859)
Benbakhti, B., Ayubi-Moak, J.S., Kalna, K., Lin, D., Hellings, G., Brammertz, G., De Meyer, K., Thayne, I.G., and Asenov, A. (2010) Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures. Microelectronics Reliability, 50 (3). pp. 360-364. ISSN 0026-2714 (doi:10.1016/j.microrel.2009.11.017)
Bindu, B., Cheng, B., Roy, G., Wang, X., Roy, S., and Asenov, A. (2010) Parameter set and data sampling strategy for accurate yet efficient statistical MOSFET compact model extraction. Solid-State Electronics, 54 (3). pp. 307-315. ISSN 0038-1101 (doi:10.1016/j.sse.2009.09.028)
Benbakhti, B. et al. (2010) Performance analysis of the new implant-free quantum-well CMOS : DualLogic approach. Solid State Electronics Journal . (Unpublished)
Brown, A.R., Huard, V., and Asenov, A. (2010) Statistical Simulation of Progressive NBTI Degradation in a 45-nm Technology pMOSFET. IEEE Transactions on Electron Devices, 57 (9). pp. 2320-2323. ISSN 0018-9383 (doi:10.1109/TED.2010.2052694)
Cheng, B.J., Dideban, D., Moezi, N., Millar, C., Roy, G., Wang, X., Roy, S., and Asenov, A. (2010) Statistical-variability compact-modeling strategies for BSIM4 and PSP. IEEE Design and Test of Computers, 27 (2). pp. 26-35. ISSN 0740-7475 (doi:10.1109/MDT.2010.53)
Kovac, U., Alexander, C., Roy, G., Riddet, C., Cheng, B.J., and Asenov, A. (2010) Hierarchical Simulation of Statistical Variability: From 3-D MC With "ab initio" Ionized Impurity Scattering to Statistical Compact Models. IEEE Transactions on Electron Devices, 57 (10). pp. 2418-2426. ISSN 0018-9383 (doi:10.1109/TED.2010.2062517)
Markov, S., Roy, S., and Asenov, A. (2010) Direct tunnelling gate leakage variability in nano-CMOS transistors. IEEE Transactions on Electron Devices, 57 (11). pp. 3106-3114. ISSN 0018-9383 (doi:10.1109/TED.2010.2075932)
Markov, S., Shushko, P., Fiegna, C., Sangiorgi, E., Shluger, A., and Asenov, A. (2010) From ab initio properties of the Si-Si02 interface, to electrical characteristics of metal-oxide-semiconductor devices. Journal of Physics: Conference Series, 242 (1). ISSN 1742-6588 (doi:10.1088/1742-6596/242/1/012010)
Martinez, A., Barker, J., Seoane, N., Brown, A., and Asenov, A. (2010) Dopants and roughness induced resonances in thin Si nanowire transistors: A self-consistent NEGF-poisson study. Journal of Physics: Conference Series, 220 (1). 012009. ISSN 1742-6596 (doi:10.1088/1742-6596/220/1/012009)
Martinez, A., Brown, A., and Asenov, A. (2010) Full-band NEGF simulations of surface roughness in Si nanowires. Journal of Physics: Conference Series, 242 (1). 012016. ISSN 1742-6596 (doi:10.1088/1742-6596/242/1/012016)
Martinez, A., Seoane, N., Brown, A.R., Barker, J.R., and Asenov, A. (2010) Variability in Si nanowire MOSFETs due to the combined effect of interface roughness and random dopants: a fully three-dimensional NEGF simulation study. IEEE Transactions on Electron Devices, 57 (7). pp. 1626-1635. ISSN 0018-9383 (doi:10.1109/TED.2010.2048405)
Riddet, C., Watling, J., Chan, K., and Asenov, A. (2010) Monte Carlo simulation study of the impact of strain and substrate orientation on hole mobility in Germanium. Journal of Physics: Conference Series, 242 (1). 012017. ISSN 1742-6596 (doi:10.1088/1742-6596/242/1/012017)
Watling, J., Riddet, C., Chan, K., and Asenov, A. (2010) Simulation of hole-mobility in doped relaxed and strained Ge layers. Journal of Applied Physics, 108 (9). 093715. ISSN 0021-8979
Palestri, P. et al. (2009) A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs. Solid-State Electronics, 53 (12). pp. 1293-1302. ISSN 0038-1101 (doi:10.1016/j.sse.2009.09.019)
Cheng, B., Roy, S., Brown, A.R., Millar, C., and Asenov, A. (2009) Evaluation of statistical variability in 32 and 22 nm technology generation LSTP MOSFETs. Solid-State Electronics, 53 (7). pp. 767-772. ISSN 0038-1101 (doi:10.1016/j.sse.2009.03.008)
Reid, D., Millar, C., Roy, S., Roy, G., Sinnott, R.O., Stewart, G., Stewart, G., and Asenov, A. (2009) Enabling cutting-edge semiconductor simulation through grid technology. Royal Society of London Philosophical Transactions A: Mathematical, Physical and Engineering Sciences, 367 (1897). pp. 2573-2584. ISSN 1364-503X (doi:10.1098/rsta.2009.0031)
Seoane, N., Garcia-Loureiro, A., Aldegunde, M., Kalna, K., and Asenov, A. (2009) Impact of intrinsic parameter fluctuations on the performance of In0.75Ga0.25As implant free MOSFETs. Semiconductor Science and Technology, 24 (5). ISSN 0268-1242 (doi:10.1088/0268-1242/24/5/055011)
Asenov, A., Brown, A., Roy, G., Cheng, B., Alexander, C., Riddet, C., Kovac, U., Martinez, A., Seoane, N., and Roy, S. (2009) Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green's function techniques. Journal of Computational Electronics, 8 (3-4). pp. 349-373. ISSN 1569-8025 (doi:10.1007/s10825-009-0292-0)
Ayubi-Moak, J., Benbakhti, B., Kalna, K., Paterson, G., Hill, R., Passlack, M., Thayne, I., and Asenov, A. (2009) Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs. Microelectronic Engineering, 86 (7-9). pp. 1564-1567. ISSN 0167-9317 (doi:10.1016/j.mee.2009.03.024)
Ayubi-Moak, J.S., Benbakhti, B., Kalna, K., Paterson, G.W., Hill, R., Passlack, M., Thayne, I.G., and Asenov, A. (2009) Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs. Microelectronic Engineering, 86 (7-9). pp. 1564-1567. ISSN 0167-9317 (doi:10.1016/j.mee.2009.03.024)
Benbakhti, B., Ayubi-Moak, J.S., Kalna, K., and Asenov, A. (2009) Effect of Interface State Trap Density on the Performance of Scaled Surface Channel In0.3Ga0.7As MOSFETs. Journal of Physics: Conference Series, 193 . ISSN 1742-6588 (doi:10.1088/1742-6596/193/1/012122)
Brown, A.R., Martinez, A., Seoane, N, and Asenov, A. (2009) Comparison of Density Gradient and NEGF for 3D Simulation of a Nanowire MOSFET. Proceedings of the 2009 Spanish Conference on Electron Devices . pp. 140-143.
Martinez, A., Brown, A.R., Seoane, N., and Asenov, A. (2009) Perturbative vs non-perturbative impurity scattering in a narrow Si nanowire GAA transistor: A NEGF study. Journal of Physics: Conference Series, 193 (1). ISSN 1742-6588 (doi:10.1088/1742-6596/193/1/012047)
Martinez, A., Kalna, K., Sushko, P.V., Shluger, A.L., Barker, J.R., and Asenov, A. (2009) Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study. IEEE Transactions on Nanotechnology, 8 (2). pp. 159-166. ISSN 1536-125X (doi:10.1109/TNANO.2008.917776)
Martinez, A., Seoane, N., Brown, A.R., Barker, J.R., and Asenov, A. (2009) 3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor. IEEE Transactions on Nanotechnology, 8 (5). pp. 603-610. ISSN 1536-125X (doi:10.1109/TNANO.2009.2020980)
Reid, D., Millar, C., Roy, G., Roy, S., and Asenov, A. (2009) Analysis of threshold voltage distribution due to random dopants: a 100 000-sample 3-D simulation study. IEEE Transactions on Electron Devices, 56 (10). pp. 2255-2263. ISSN 0018-9383 (doi:10.1109/TED.2009.2027973 )
Seoane, N., Martinez, A., Brown, A.R., Barker, J.R., and Asenov, A. (2009) Current variability in Si nanowire MOSFETs due to random dopants in the source/drain regions: a fully 3-D NEGF simulation study. IEEE Transactions on Electron Devices, 56 (7). pp. 1388-1395. ISSN 0018-9383 (doi:10.1109/TED.2009.2021357)
Thayne, I.G. et al. (2009) Review of current status of III-V MOSFETs. ECS Transactions, 19 (5). pp. 275-286. ISSN 1938-5862 (doi:10.1149/1.3119552)
Thayne, I. G., Hill, R. J. W., Moran, D.A.J., Kalna, K., Asenov, A., and Passlack, M. (2008) Comments on "High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm". IEEE Electron Device Letters, 29 (10). pp. 1085-1086. ISSN 0741-3106 (doi:10.1109/LED.2008.2002752)
Sinnott, R.O., Millar, C., and Asenov, A. (2008) Supercomputing at work in the nanoCMOS electronics domain. ERCIM News, 74 . pp. 22-23. ISSN 0926-4981
Watling, J. R., Brown, A. R., Ferrari, G., Barker, J. R., Bersuker, G., Zeitzoff, P., and Asenov, A. (2008) Impact of high-kappa gate stacks on transport and variability in nano-CMOS devices. Journal of Computational and Theoretical Nanoscience, 5 (6). pp. 1072-1088. ISSN 1546-1955
Hill, R.J.W. et al. (2008) 1 μm gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737μS/μm. Electronics Letters, 44 . pp. 498-500. ISSN 0013-5194 (doi:10.1049/el:20080470)
Aldegunde, M., Seoane, N., Garcia-Loureiro, A. J., Sushko, P. V., Shluger, A. L., Gavartin, J. L., Kalna, K,, and Asenov, A, (2008) Atomistic mesh generation for the simulation of nanoscale metal-oxide-semiconductor field-effect transistors. Physical Review E, 77 (5). ISSN 1539-3755 (doi:10.1103/PhysRevE.77.056702)
Alexander, C., Roy, G., and Asenov, A. (2008) Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using "Ab Initio" Ionized Impurity Scattering. IEEE Transactions on Electron Devices, 55 (11). pp. 3251-3258. ISSN 0018-9383 (doi:10.1109/TED.2008.2004647 )
Asenov, A., Cathignol, A., Cheng, B., McKenna, K. P., Brown, A. R., Shluger, A. L., Chanemougame, D., Rochereau, K., and Ghibaudo, G. (2008) Origin of the asymmetry in the magnitude of the statistical variability of n- and p-channel poly-Si gate bulk MOSFETs. IEEE Electron Device Letters, 29 (8). pp. 913-915. ISSN 0741-3106 (doi:10.1109/LED.2008.2000843 )
Brown, A. R., and Asenov, A. (2008) Capacitance fluctuations in bulk MOSFETs due to random discrete dopants. Journal of Computational Electronics, 7 (3). pp. 115-118. ISSN 1569-8025 (doi:10.1007/s10825-008-0181-y)
Bukhori, M. F., Roy, S., and Asenov, A. (2008) Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants. Microelectronics Reliability, 48 (8-9). pp. 1549-1552. ISSN 0026-2714 (doi:10.1016/j.microrel.2008.06.029 )
Cathignol, A., Cheng, B., Chanemougame, D., Brown, A. R., Rochereau, K., Ghibaudo, G., and Asenov, A. (2008) Quantitative evaluation of statistical variability sources in a 45-nm-technological node LP N-MOSFET. IEEE Electron Device Letters, 29 (6). pp. 609-611. ISSN 0741-3106 (doi:10.1109/LED.2008.922978)
Drysdale, T. D., Brown, A. R., Roy, G., Roy, S., and Asenov, A. (2008) Capacitance variability of short range interconnects. Journal of Computational Electronics, 7 (3). pp. 124-127. ISSN 1569-8025 (doi:10.1007/s10825-007-0154-6)
Hill, R. J. W. et al. (2008) 1 mu m gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 mu S/mm. Electronics Letters, 44 (7). pp. 498-499. ISSN 0013-5194 (doi:10.1049/el:20080470)
Kalna, K., Martinez, A., Svizhenko, A., Anantram, M. P., Barker, J. R., and Asenov, A. (2008) NEGF Simulations of the effect of strain on scaled double gate NanoMOSFETs. Journal of Computational Electronics, 7 (3). pp. 288-292. ISSN 1569-8025 (doi:10.1007/s10825-008-0212-8)
Kalna, K., Seoane, N., Garcia-Loureiro, A. J., Thayne, I. G., and Asenov, A. (2008) Benchmarking of scaled InGaAs implant-free NanoMOSFETs. IEEE Transactions on Electron Devices, 55 (9). pp. 2297-2306. ISSN 0018-9383 (doi:10.1109/TED.2008.927658)
Kovac, U., Reid, D., Millar, C., Roy, G., Roy, S., and Asenov, A. (2008) Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET. Microelectronics Reliability, 48 (8-9). pp. 1572-1575. ISSN 0026-2714 (doi:10.1016/j.microrel.2008.06.027 )
Markov, S., Sushko, P.V., Roy, S., Fiegna, C., Sangiorgi, E., Shluger, A.L., and Asenov, A. (2008) Si-Sio(2) interface band-gap transition - effects on MOS inversion layer. Physica Status Solidi A: Applications and Materials Science, 205 (6). pp. 1290-1295. ISSN 1862-6300 (doi:10.1002/pssa.200778154 )
Martinez, A., Barker, J. R., Svizhenko, A., Anantram, M. P., Bescond, M., and Asenov, A. (2008) Ballistic Quantum Simulators for Studying Variability in Nanotransistors. Journal of Computational and Theoretical Nanoscience, 5 (12). pp. 2289-2310. ISSN 1546-1955 (doi:10.1166/jctn.2008.1201)
Martinez, A., Bescond, M., Brown, A., Barker, J. R., and Asenov, A. (2008) A full 3D non-equilibrium Green functions study of a stray charge in a nanowire MOS transistor. Journal of Computational Electronics, 7 (3). pp. 359-362. ISSN 1569-8025 (doi:10.1007/s10825-008-0240-4)
Martinez, A., Kalna, K., Svizhenko, A., Anantram, M.P., Barker, J.R., and Asenov, A. (2008) Impact of strain on scaling of Double Gate nanoMOSFETs using NEGF approach. Physica Status Solidi C: Current Topics in Solid State Physics, Vol 5, No 1, 5 (1). pp. 47-51. ISSN 1610-1634
Millar, C., Madathil, R., Beckstein, O., Sansom, M. S. P., Roy, S., and Asenov, A. (2008) Brownian simulation of charge transport in α-Haemolysin. Journal of Computational Electronics, 7 (1). pp. 28-33. ISSN 1569-8025 (doi:10.1007/s10825-008-0230-6)
Millar, C., Reid, D., Roy, G., Roy, S., and Asenov, A. (2008) Accurate statistical description of random dopant-induced threshold voltage variability. IEEE Electron Device Letters, 29 (8). pp. 946-948. ISSN 0741-3106 (doi:10.1109/LED.2008.2001030)
Paluchowski, S. H., Cheng, B., Roy, S., Asenov, A., and Cumming, D. R. S. (2008) Investigation into effects of device variability on CMOS layout motifs. Electronics Letters, 44 (10). pp. 626-627. ISSN 0013-5194 (doi:10.1049/el:20080447 )
Passlack, M., Droopad, R., Thayne, I.G., and Asenov, A. (2008) III-V MOSFETs for future transistor applications. Solid State Technology, 51 (12). pp. 26-30. ISSN 0038-111X
Riddet, C., Brown, A. R., Roy, S., and Asenov, A. (2008) Boundary conditions for Density Gradient corrections in 3D Monte Carlo simulations. Journal of Computational Electronics, 7 (3). pp. 231-235. ISSN 1569-8025 (doi:10.1007/s10825-008-0222-6)
Seoane, N., Garcia-Loureiro, A. J., Kalna, K., and Asenov, A. (2008) Random dopant related variability in the 30 nm gate length In0.75Ga0.25As implant free MOSFET. Journal of Computational Electronics, 7 (3). pp. 159-163. ISSN 1569-8025 (doi:10.1007/s10825-008-0233-3)
Hill, R.J.W. et al. (2007) Enhancement-mode GaAs MOSFETs with an In0.3 Ga0.7As channel, a mobility of over 5000 cm2/V ·s, and transconductance of over 475 μS/μm. IEEE Electron Device Letters, 284 (12). pp. 1080-1082. ISSN 0741-3106 (doi:10.1109/LED.2007.910009)
Ferrari, G., Watling, J.R., Roy, S., Barker, J.R., and Asenov, A. (2007) Beyond SiO2 technology: simulation of the impact of high-κ dielectrics on mobility. Journal of Non-Crystalline Solids, 353 (5-7). pp. 630-634. ISSN 0022-3093 (doi:10.1016/j.jnoncrysol.2006.10.044)
Kalna, K., Wilson, J.A., Moran, D.A.J., Hill, R.J.W., Long, A.R., Droopad, R., Passlack, M., Thayne, I.G., and Asenov, A. (2007) Monte Carlo simulations of high-performance implant free In0.3Ga0.7 nano-MOSFETs for low-power CMOS applications. IEEE Transactions on Nanotechnology, 6 (1). pp. 106-112. ISSN 1536-125X (doi:10.1109/TNANO.2006.888543)
Asenov, A, Kalna, K, Thayne, I, and Hill, RJW (2007) Simulation of implant free III-V MOSFETs for high performance low power Nano-CMOS applications. Microelectronic Engineering, 84 . pp. 2398-2403. (doi:10.1016/j.mee.2007.04.117)
Brown, A.R., Roy, G., and Asenov, A. (2007) Poly-Si-gate-related variability in decananometer MOSFETs with conventional architecture. IEEE Transactions on Electron Devices, 54 (11). pp. 3056-3063. ISSN 0018-9383 (doi:10.1109/TED.2007.907802)
Cheng, B., Roy, S., and Asenov, A. (2007) CMOS 6-T SRAM cell design subject to ''atomistic" fluctuations. Solid-State Electronics, 51 . pp. 565-571. ISSN 0038-1101 (doi:10.1016/j.sse.2007.02.009)
Ferrari, G., Watling, J.R., Roy, S., Barker, J.R., and Asenov, A. (2007) Beyond SiO2 technology: Simulation of the impact of high-kappa dielectrics on mobility. Journal of Non-Crystalline Solids, 353 . pp. 630-634. ISSN 0022-3093 (doi:10.1016/j.jnoncrysol.2006.10.004)
Fujihashi, C, Yukiya, T, and Asenov, A (2007) Electron and hole current characteristics of n-i-p-type semiconductor quantum dot transistor. IEEE Transactions on Nanotechnology, 6 . pp. 320-327. (doi:10.1109/TNANO.2007.893570)
Kalna, K, Droopad, R, Passlack, M, and Asenov, A (2007) Monte Carlo simulations of InGaAs nano-MOSFETs. Microelectronic Engineering, 84 . pp. 2150-2153. (doi:10.1016/j.mee.2007.04.011)
Markov, S., Brown, A.R., Cheng, B.J., Roy, G., Roy, S., and Asenov, A. (2007) Three-dimensional statistical simulation of gate leakage fluctuations due to combined interface roughness and random dopants. Japanese Journal of Applied Physics Part 1: Regular Papers Brief Communications and Review Papers, 46 . pp. 2112-2116. (doi:10.1143/JJAP.46.2112)
Martinez, A, Barker, JR, Svizhenko, A, Anantram, MP, and Asenov, A (2007) The impact of random dopant aggregation in source and drain on the performance of ballistic DG Nano-MOSFETs: A NEGF study. IEEE Transactions on Nanotechnology, 6 . pp. 438-445. (doi:10.1109/TNANO.2007.899638)
Martinez, A, Kalna, K, Barker, JR, and Asenov, A (2007) A study of the interface roughness effect in Si nanowires using a full 3D NEGF approach. Physica E: Low-Dimensional Systems and Nanostructures, 37 . pp. 168-172. ISSN 1386-9477 (doi:10.1016/j.physe.2006.07.007)
Martinez, A., Bescond, M., Barker, J.R., Svizhenko, A., Anantram, M.P., Millar, C., and Asenov, A. (2007) A self-consistent full 3-D real-space NEGF simulator for studying nonperturbative effects in nano-MOSFETs. IEEE Transactions on Electron Devices, 54 (9). pp. 2213-2222. ISSN 0018-9383 (doi:10.1109/TED.2007.902867)
Millar, C., Roy, S., Brown, A.R., and Asenov, A. (2007) Simulating the bio-nanoelectronic interface. Journal of Physics: Condensed Matter, 19 . ISSN 0953-8984 (doi:10.1088/0953-8984/19/21/215205)
Riddet, C., Brown, A.R., Alexander, C.L., Watling, J.R., Roy, S., and Asenov, A. (2007) 3-D Monte Carlo simulation of the impact of quantum confinement scattering on the magnitude of current fluctuations in double gate MOSFETs. IEEE Transactions on Nanotechnology, 6 . pp. 48-55. ISSN 1536-125X (doi:10.1109/TNANO.2006.886739)
Samsudin, K., Adamu-Lerna, F., Brown, A.R., Roy, S., and Asenov, A. (2007) Combined sources of intrinsic parameter fluctuations in sub-25 nm generation UTB-SOI MOSFETs: A statistical simulation study. Solid-State Electronics, 51 . pp. 611-616. ISSN 0038-1101 (doi:10.1016/j.sse.2007.02.022)
Seoane, N., Garcia-Loureiro, A.J., Kalna, K., and Asenov, A. (2007) Impact of intrinsic parameter fluctuations on the performance of HEMTs studied with a 3D parallel drift-diffusion simulator. Solid-State Electronics, 51 . pp. 481-488. ISSN 0038-1101 (doi:10.1016/j.sse.2007.01.030)
Asenov, A (2006) Green function study of quantum transport in ultra-small devices with embedded atomistic cluster. Journal of Physics Conferences Series, 38 (1). pp. 233-246. (doi:10.1088/1742-6596/35/1/021)
Asenov, A (2006) The unintentional discrete charges in a nominally undoped channel of a thin body double gate MOSFET: Classical to Full Quantum Simulation. Journal of Physics Conferences Series, 38 (1). pp. 192-195. (doi:10.1088/1742-6596/38/1/046)
Barker, J.R., Martinez, A., Svizhenko, A., Anantram, A., and Asenov, A. (2006) Green function study of quantum transport in ultra-small devices with embedded atomistic clusters. Journal of Physics: Conference Series, 35 . pp. 233-246. ISSN 1742-6588 (doi:10.1088/1742-6596/35/1/021)
Ferrari, G, Watling, JR, Roy, S, Barker, JR, Zeitzoff, P, Bersuker, G, and Asenov, A (2006) Monte Carlo study of mobility in Si devices with HfO2-based oxides. Materials Science in Semiconductor Processing, 9 . pp. 995-999. (doi:10.1016/j.mssp.2006.10.035)
Kalna, K., Wang, Q., Passlack, M., and Asenov, A. (2006) Monte Carlo simulations of delta-doping placement in sub-100 nm implant free InGaAs MOSFETs. Materials Science and Engineering B: Solid State Materials For Advanced Technology, 135 . pp. 285-288. (doi:10.1016/j.mseb.2006.08.019)
Martinez, A., Svizhenko, A., Anantram, M.P., Barker, J.R., and Asenov, A. (2006) A NEGF study of the effect of surface roughness on CMOS nanotransistors. Journal of Physics: Conference Series, 35 (1). pp. 269-274. ISSN 1742-6596 (doi:10.1088/1742-6596/35/1/024)
Roy, G., Brown, A.R., Adamu-Lema, F., Roy, S., and Asenov, A. (2006) Simulation study of individual and combined sources of intrinsic parameter fluctuations in conventional nano-MOSFETs. IEEE Transactions on Electron Devices, 53 . pp. 3063-3070. ISSN 0018-9383 (doi:10.1109/TED.2006.885683)
Samsudin, K., Cheng, B., Brown, A.R., Roy, S., and Asenov, A. (2006) Integrating intrinsic parameter fluctuation description into BSIMSOI to forecast sub-15 nm UTB SOI based 6T SRAM operation. Solid-State Electronics, 50 . pp. 86-93. ISSN 0038-1101 (doi:10.1016/j.sse.2005.10.048)
Samsudin, K., Cheng, B., Brown, A.R., Roy, S., and Asenov, A. (2006) Sub-25 nm UTB SOISRAM cell under the influence of discrete random dopants. Solid-State Electronics, 50 . pp. 660-667. ISSN 0038-1101 (doi:10.1016/j.sse.2006.03.019)
Alexander, C., Brown, A.R., Watling, J.R., and Asenov, A. (2005) Impact of scattering in 'atomistic' device simulations. Solid-State Electronics, 49 . pp. 733-739. ISSN 0038-1101 (doi:10.1016/j.sse.2004.10.012)
Alexander, CL, Brown, AR, Watling, JR, and Asenov, A (2005) Impact of single charge trapping in nano-MOSFETs - Electrostatics versus transport effects. IEEE Transactions on Nanotechnology, 4 . pp. 339-344. (doi:10.1109/TNANO.2005.846929)
Cheng, B., Roy, S., Roy, G., Adamu-Lema, F., and Asenov, A. (2005) Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells. Solid-State Electronics, 49 . pp. 740-746. ISSN 0038-1101 (doi:10.1016/j.sse.2004.09.005)
Garcia-Loureiro, A.J., Kalna, K., and Asenov, A. (2005) Efficient three-dimensional parallel simulations of PHEMTs. International Journal of Numerical Modelling-Electronic Networks Devices and Fields, 18 . pp. 327-340. (doi:10.1002/jnm.581)
Millar, C, Asenov, A, and Roy, S (2005) Self-consistent particle simulation of ion channels. Journal of Computational and Theoretical Nanoscience, 2 . pp. 56-67. (doi:10.1166/jctn.2005.004)
Watling, JR, Yang, LF, Asenov, A, Barker, JR, and Roy, S (2005) Impact of high-k dielectric HfO2 on the mobility and device performance of sub-100-nm nMOSFETs. IEEE Transactions on Device and Materials Reliability, 5 . pp. 103-108. (doi:10.1109/TDMR.2005.845238)
Alexander, C, Watling, J, and Asenov, A (2004) Numerical carrier heating when implementing (PM)-M-3 to study small volume variations. Semiconductor Science and Technology, 19 . S139-S141. (doi:10.1088/0268-1242/19/4/049)
Borici, M, Watling, JR, Wilkins, RCW, Yang, L, Barker, JR, and Asenov, A (2004) Interface roughness scattering and its impact on electron transport in relaxed and strained Si n-MOSFETs. Semiconductor Science and Technology, 19 . S155-S157. (doi:10.1088/0268-1242/19/4/054)
Kalna, K, Borici, M, Yang, L, and Asenov, A (2004) Monte Carlo simulations of III-V MOSFETs. Semiconductor Science and Technology, 19 . S202-S205. (doi:10.1088/0268-1242/19/4/069)
Kalna, K., and Asenov, A. (2004) Role of multiple delta doping in PHEMTs scaled to sub-100 nm dimensions. Solid-State Electronics, 48 . pp. 1223-1232. ISSN 0038-1101 (doi:10.1016/j.sse.2004.02.008)
Watling, J.R., Yang, L., Borici, M., Wilkins, R.C.W., Asenov, A., Barker, J.R., and Roy, S. (2004) The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs. Solid-State Electronics, 48 . pp. 1337-1346. ISSN 0038-1101 (doi:10.1016/j.sse.2004.01.015)
Yang, L, Asenov, A, Watling, JR, Borici, M, Barker, JR, Roy, S, Elgaid, K, Thayne, I, and Hackbarth, T (2004) Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs. Microelectronics Reliability, 44 . pp. 1101-1107. (doi:10.1016/j.microrel.2004.04.003)
Yang, LF, Watling, JR, Wilkins, RCW, Borici, M, Barker, JR, Asenov, A, and Roy, S (2004) Si/SiGe heterostructure parameters for device simulations. Semiconductor Science and Technology, 19 . pp. 1174-1182.
Ma, W., Kaya, S., and Asenov, A. (2003) Study of RF linearity in sub-50nm MOSFETs using simulations. Journal of Computational Electronics, 2 (2-4). pp. 347-352. ISSN 1569-8025 (doi:10.1023/B:JCEL.0000011450.37111.9d)
Millar, C., Asenov, A., and Roy, S. (2003) Brownian ionic channel simulation. Journal of Computational Electronics, 2 (2-4). pp. 257-262. ISSN 1569-8025 (doi:10.1023/B:JCEL.0000011434.84806.6d)
Roy, S., Lee, A., Brown, A.R., and Asenov, A. (2003) Application of quasi-3D and 3D MOSFET simulations in the atomistic regime. Journal of Computational Electronics, 2 (2-4). pp. 423-426. ISSN 1569-8025 (doi:10.1023/B:JCEL.0000011464.17950.09)
Asenov, A., Brown, A.R., Davies, J.H., Kaya, S., and Slavcheva, G. (2003) Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs. IEEE Transactions on Electron Devices, 50 (9). pp. 1837-1852. ISSN 0018-9383 (doi:10.1109/TED.2003.815862)
Asenov, A., Kaya, S., and Brown, A.R. (2003) Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness. IEEE Transactions on Electron Devices, 50 (5). pp. 1254-1260. ISSN 0018-9383 (doi:10.1109/TED.2003.813457)
Asenov, A., Balasubramaniam, R., Brown, A.R., and Davies, J.H. (2003) RTS amplitudes in decananometer MOSFETs: 3-D simulation study. IEEE Transactions on Electron Devices, 50 (3). pp. 839-845. ISSN 0018-9383 (doi:10.1109/TED.2003.811418)
Alexander, C, Watling, JR, Brown, AR, and Asenov, A (2003) Artificial carrier heating due to the introduction of ab initio Coulomb scattering in Monte Carlo simulations. Superlattices and Microstructures, 34 . pp. 319-326. (doi:10.1016/j.spmi.2004.03.025)
Asenov, A., Brown, A.R., and Watling, J.R. (2003) Quantum corrections in the simulation of decanano MOSFETs. Solid-State Electronics, 47 . pp. 1141-1145. ISSN 0038-1101 (doi:10.1016/S0038-1101(03)00030-3)
Brown, AR, Adamu-Lema, F, and Asenov, A (2003) Intrinsic parameter fluctuations in nanometre scale thin-body SOI devices introduced by interface roughness. Superlattices and Microstructures, 34 . pp. 283-291. (doi:10.1016/j.spmi.2004.03.026)
Kalna, K, and Asenov, A (2003) Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: a Monte Carlo simulation study. Mathematics and Computers in Simulation, 62 . pp. 357-366.
Kalna, K., Yang, L., and Asenov, A. (2003) Simulation study of high performance III-V MOSFETs for digital applications. Journal of Computational Electronics, 2 (2-4). pp. 341-345. ISSN 1569-8025 (doi:10.1023/B:JCEL.0000011449.09021.55)
Lee, A, Brown, AR, Asenov, A, and Roy, S (2003) Random telegraph signal noise simulation of decanano MOSFETs subject to atomic scale structure variation. Superlattices and Microstructures, 34 . pp. 293-300. (doi:10.1016/j.spmi.2004.03.027)
Roy, G, Brown, AR, Asenov, A, and Roy, S (2003) Bipolar quantum corrections in resolving individual dopants in 'atomistic' device simulation. Superlattices and Microstructures, 34 . pp. 327-334. (doi:10.1016/j.spmi.2004.03.066)
Brown, A.R., Asenov, A., and Watling, J.R. (2002) Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter. IEEE Transactions on Nanotechnology, 1 (4). pp. 195-200. ISSN 1536-125X (doi:10.1109/TNANO.2002.807392)
Kaya, S., Asenov, A., and Roy, S. (2002) Breakdown of universal mobility curves in sub-100-nm MOSFETs. IEEE Transactions on Nanotechnology, 1 (4). pp. 260-264. ISSN 1536-125X (doi:10.1109/TNANO.2002.807385)
Millar, C., Asenov, A., and Watling, J.R. (2002) Excessive over-relaxation method for multigrid poisson solvers. Journal of Computational Electronics, 1 (3). pp. 341-345. ISSN 1569-8025 (doi:10.1023/A:1020791306305)
Brown, A.R., Watling, J.R., and Asenov, A. (2002) A 3-D atomistic study of archetypal double gate MOSFET structures. Journal of Computational Electronics, 1 (1-2). pp. 165-169. ISSN 1569-8025 (doi:10.1023/A:1020704919992)
Asenov, A., Kaya, S., and Davies, J. H. (2002) Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations. IEEE Transactions on Electron Devices, 49 (1). pp. 112-119. ISSN 0018-9383 (doi:10.1109/16.974757)
Asenov, A., Kaya, S., and Brown, A.R. (2002) Implications of imperfect interfaces and edges in ultra-small MOSFET characteristics. Physica Status Solidi B: Basic Research, 233 . pp. 101-112.
Kalna, K, and Asenov, A (2002) Nonequilibrium transport in scaled high electron mobility transistors. Semiconductor Science and Technology, 17 . pp. 579-584.
Kalna, K., Roy, S., Asenov, A., Elgaid, K., and Thayne, I. (2002) Scaling of pseudomorphic high electron mobility transistors to decanano dimensions. Solid-State Electronics, 46 . pp. 631-638. ISSN 0038-1101
Prest, M.J. et al. (2002) Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs. Materials Science and Engineering B: Solid State Materials For Advanced Technology, 89 . pp. 444-448.
Slavcheva, G, Davies, JH, Brown, AR, and Asenov, A (2002) Potential fluctuations in metal-oxide-semiconductor field-effect transistors generated by random impurities in the depletion layer. Journal of Applied Physics, 91 . pp. 4326-4334. (doi:10.1063/1.1450031)
Unlu, H., and Asenov, A. (2002) Band offsets in III-nitride heterostructures. Journal of Physics D: Applied Physics, 35 . pp. 591-594. ISSN 0022-3727
Asenov, A., Slavcheva, G., Brown, A.R., and Saini, S. (2001) Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study. IEEE Transactions on Electron Devices, 48 (4). pp. 722-729. ISSN 0018-9383 (doi:10.1109/16.915703)
Asenov, A., Slavcheva, G., Kaya, S., and Balasubramaniam, R. (2001) Quantum corrections to the 'atomistic' MOSFET simulations. VLSI Design, 13 . 15-+.
Kalna, K., Asenov, A., Elgaid, K., and Thayne, I. (2001) Scaling of pHEMTs to decanano dimensions. VLSI Design, 13 . pp. 435-439.
Knox, A.R., Asenov, A., and Lowe, A.C. (2001) An electron emission model for use with 3D electromagnetic finite element simulation. Solid-State Electronics, 45 . pp. 841-851. ISSN 0038-1101
Palmer, MJ et al. (2001) Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers. Applied Physics Letters, 78 . pp. 1424-1426.
Straube, U.N., Evans, A.G.R., Braithwaite, G., Kaya, S., Watling, J., and Asenov, A. (2001) On the mobility extraction for HMOSFETs. Solid-State Electronics, 45 . pp. 527-529. ISSN 0038-1101
Watling, J.R., Zhao, Y.P., Asenov, A., and Barker, J.R. (2001) Non-equilibrium hole transport in deep sub-micron well-tempered Si p-MOSFETs. VLSI Design, 13 . pp. 169-173.
Asenov, A., and Saini, S. (2000) Polysilicon gate enhancement of the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFETs with ultrathin gate oxide. IEEE Transactions on Electron Devices, 47 (4). pp. 805-812. ISSN 0018-9383 (doi:10.1109/16.830997)
Asenov, A., Brown, A. R., Davies, J. H., and Saini, S. (1999) Hierarchical approach to 'atomistic' 3-D MOSFET simulation. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 18 (11). pp. 1558-1565. ISSN 0278-0070 (doi:10.1109/43.806802)
Asenov, A., and Saini, S. (1999) Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-μm MOSFET's with epitaxial and delta-doped channels. IEEE Transactions on Electron Devices, 46 (8). pp. 1718-1724. ISSN 0018-9383 (doi:10.1109/16.777162)
Ternent, G., Asenov, A., Thayne, I.G., MacIntyre, D.S., Thom, S., and Wilkinson, C.D.W. (1999) SiGe p-channel MOSFETs with tungsten gate. Electronics Letters, 35 (5). pp. 430-431. ISSN 0013-5194 (doi:10.1049/el:19990305)
Asenov, A. (1998) Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D 'atomistic' simulation study. IEEE Transactions on Electron Devices, 45 (12). pp. 2502-2513. ISSN 0018-9383 (doi:10.1109/16.735728)
Babiker, S., Asenov, A., Cameron, N., Beaumont, S. P., and Barker, J. R. (1998) Complete Monte Carlo RF analysis of 'real' short-channel compound FET's. IEEE Transactions on Electron Devices, 45 (8). pp. 1644-1652. ISSN 0018-9383 (doi:10.1109/16.704358)
Babiker, S., Asenov, A., Cameron, N., and Beaumont, S.P. (1996) Simple approach to include external resistances in the Monte Carlo simulation of MESFETs and HEMTs. IEEE Transactions on Electron Devices, 43 (11). pp. 2032-2034. ISSN 0018-9383 (doi:10.1109/16.543047)
Cameron, N.I., Murad, S., McLelland, H., Asenov, A., Taylor, M.R.S., Holland, M.C., and Beaumont, S.P. (1996) Gate recess engineering of pseudomorphic In0.30GaAs/GaAs HEMTs. Electronics Letters, 32 (8). pp. 770-772. ISSN 0013-5194
Speckbacher, P., Berger, J., Asenov, A., Koch, D., and Weber, W. (1995) The 'gated-diode' configuration in MOSFET's, a sensitive tool for characterizing hot-carrier degradation. IEEE Transactions on Electron Devices, 42 (7). pp. 1287-1296. ISSN 0018-9383 (doi:10.1109/16.391211)
Marczewski, J., Zachau, M., Asenov, A., Koch, F., and Gruetzmacher, D. (1992) A diode device combining lateral field-effect transport and vertical tunneling in a multi-quantum-well heterostructure. IEEE Electron Device Letters, 13 (6). pp. 338-340. ISSN 0741-3106 (doi:10.1109/55.145077)
Speckbacher, P., Asenov, A., Bollu, M., Koch, F., and Weber, W. (1990) Hot-carrier-induced deep-level defects from gated-diode measurements on MOSFETs. IEEE Electron Device Letters, 11 (2). pp. 95-97. ISSN 0741-3106 (doi:10.1109/55.46940)
Book
Reid, D., Millar, C., Roy, S., Roy, G., Sinnott, R., Stewart, G., and Asenov, A. (2008) An accurate statistical analysis of random dopant induced variability in 140,00013nm MOSFETs. IEEE, pp. 79-80. ISBN 9781424420711
Book Section
Asenov, A. (2010) Statistical nano CMOS variability and its impact on SRAM. In: Singhee, A. and Rutenbar, R.A. (eds.) Extreme Statistics in Nanoscale Memory Design. Springer, pp. 17-50. ISBN 9781441966056
Sinnott, R.O., Stewart, G., Asenov, A., Millar, C., Reid, D., Roy, G., Roy, S., Davenhall, C., Harbulot, B., and Jones, M. (2010) E-infrastructure support for nanoCMOS device and circuit simulations. In: Hamza, M.H. (ed.) Proceedings of the Conference on Parallel and Distributed Computing and Networks, Innsbruck, Austria, 16-18th February 2010. ACTA Press, Anaheim, USA. ISBN 9780889868342
Sinnott, R.O., Stewart, G., Asenov, A., Millar, C., Reid, D., Roy, G., Roy, S., Davenhall, C., Harbulot, B., and Jones, M. (2009) Multi-level simulations to support nanoCMOS electronics research. In: 2009 ASME Design Engineering Technical Conferences and Computers and Information in Engineering Conference DETC2009, August 30-September 2, 2009, San Diego, California, USA. American Society of Mechanical Engineers, New York, USA. ISBN 9780791838563
Ayubi-Moak, J.S., Kalna, K., and Asenov, A. (2009) High-performance in0.75Ga0.25As implant-free n-type MOSFETs for low power applications. In: Electron Devices, 2009. CDE 2009. Spanish Conference on. IEEE, pp. 92-95. ISBN 9781424428380
Reid, D., Millar, C., Roy, G., Roy, S., and Asenov, A. (2009) Statistical enhancement of combined simulations of RDD and LER variability: what can simulation of a 105 sample teach us? In: Proceedings of the 2009 IEEE International Electron Devices Meeting (IEDM), Baltimore, USA, 7-9 December 2009. IEEE Computer Society, pp. 657-660. ISBN 9781424456390
Cheng, B., Roy, S., Brown, A., Millar, C., and Asenov, A. (2008) Evaluation of Intrinsic Parameter Fluctuations on 45, 32 and 22nm Technology Node LP N-MOSFETs. In: ESSDERC 2008: Proceedings of the 38th European Solid-State Device Research Conference. Series: Proceedings of the European Solid-State Device Research Conference . IEEE, New York, pp. 47-50. ISBN 978-1-4244-2363-7
Cheng, B., Roy, S., Brown, A.R., Millar, C., and Asenov, A. (2008) Statistical variations in 32nm thin-body SOI devices and SRAM cells. In: 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. IEEE, pp. 389-392. ISBN 9781424421855
Hill, R.J.W., Moran, D.A.J., Li, X., Zhou, H., Macintyre, D.S., Thoms, S., Asenov, A., and Thayne, I.G. (2008) Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics. In: Proceedings of the IEEE Silicon Nanoelectronics Workshop, 15-16 June 2008, Honolulu, Hawaii. IEEE Computer Society, Piscataway, N.J., USA. ISBN 9781424420711
Kalna, K. et al. (2008) III-V MOSFETs for digital applications with silicon co-integration. In: International Conference on Advanced Semiconductor Devices and Microsystems: 12-16 October 2008, Smolenice, Slovakia. IEEE Computer Society, Piscataway, N.J., USA, pp. 39-46. ISBN 9781424423255
Martinez, A., Barker, J. R., Bescond, M., Brown, A. R., and Asenov, A. (2008) Performance variability in wrap-round gate silicon nano-transistors: a 3D self-consistent NEGF study of ballistic flows for atomistically-resolved source and drain - art. no. 012026. In: Goodnick, S.M. and Ferry, D.K. (eds.) International Symposium on Advanced Nanodevices and Nanotechnology. Series: Journal of Physics Conference Series (109). IOP Publishing, Bristol, p. 12026. ISBN 1742-6588
Reid, D., Millar, C., Roy, G., Roy, S., Sinnott, R.O., Stewart, G., and Asenov, A. (2008) Prediction of random dopant induced threshold voltage fluctuations in NanoCMOS transistors. In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices, 9-11 Sept 2008, Hakone, Japan. IEEE Computer Society, Piscataway, N.J., USA, pp. 21-24. ISBN 9781424417537
Reid, D., Millar, C., Roy, G., Roy, S., Sinnott, R.O., Stewart, G., and Asenov, A. (2008) An accurate statistical analysis of random dopant induced variability in 140,000 13nm MOSFET. In: Proceedings of the IEEE Silicon Nanoelectronics Workshop, 15-16 June 2008, Honolulu, Hawaii. IEEE Computer Society, Piscataway, N.J., USA. ISBN 9781424420711
Sinnott, R.O. et al. (2008) Secure, performance-oriented data management for nanoCMOS electronics. In: Fourth IEEE International Conference on E-Science: 7-12 December 2008, Indiana, USA. IEEE Computer Society, Piscataway, N.J., USA, pp. 87-94.
Sinnott, R.O. et al. (2008) Integrating security solutions to support nanoCMOS electronics research. In: Proceedings of the 2008 International Symposium on Parallel and Distributed Processing with Applications: 10-12 December 2008, Sydney, NSW, Australia. IEEE Computer Society, Los Alamitos, USA, pp. 71-79. ISBN 9780769534718
Wang, X., Roy, S., and Asenov, A. (2008) High performance MOSFET scaling study from bulk 45nm technology generation. In: Proceeding of the 9th International Conference on Solid-State and Integrated-Circuit Technology: 20-23 October 2008, Beijing, China. IEEE Computer Society, Piscataway, N.J., USA, pp. 484-487. ISBN 9781424421855
Wang, X., Roy, S., and Asenov, A. (2008) Impact of strain on LER variability in bulk MOSFETs. In: Proceedings of the 38th European Solid-state Device Research Conference, 15-19 September 2008, Edinburgh, UK. IEEE Computer Society, Piscataway, N.J., USA, pp. 190-193. ISBN 9781424423637
Sinnott, R.O., Asenov, A., Brown, A., Millar, C., Roy, G., Roy, S., and Stewart, G. (2007) Grid infrastructures for the electronics domain: requirements and early prototypes from an EPSRC pilot project. In: Cox, S.J. (ed.) Proceedings of the UK e-Science All Hands Meeting 2007, Nottingham, UK, 10th-13th September 2007. National e-Science Centre, Edinburgh. ISBN 9780955398834
Sinnott, R.O. et al. (2006) Meeting the design challenges of nano-CMOS electronics: an introduction to an upcoming EPSRC pilot project. In: Cox, S.J. (ed.) Proceedings of the UK e-Science All Hands Meeting 2006 : Nottingham, UK, 18th-21st September. National e-Science Centre, Edinburgh. ISBN 9780955398810
Asenov, A., Brown, A.R., and Kaya, S. (2004) Atomistic simulation of decanano MOSFETs. In: Dabrowski, J. and Weber, E.R. (eds.) Predictive Simulation of Semiconductor Processing: Status and Challenges. Series: Springer series in materials science (72). Springer-Verlag, Berlin, Germany, pp. 111-153. ISBN 9783540204817
Conference Proceedings
Towie, E., Liao, S.-Y., Riddet, C., and Asenov, A. (2012) InGaAs implant-free quantum-well MOSFETs: performance evaluation using 3D Monte Carlo simulation. In: Intel European Research and Innovation Conference, 3-5 Oct 2012, Dublin, Ireland.
Watling, J.R., Riddet, C., and Asenov, A. (2012) Accurate and efficient modelling of inelastic hole-acoustic phonon scattering in Monte Carlo simulations. In: 15th International Workshop on Computational Electronics (IWCE), 22-25 May 2012, Madison, WI, USA.
Towie, E., Chan, K.-H., Benbakhti, B., Riddet, C., and Asenov, A. (2011) Statistical variability in implant-free quantum-well MOSFETs with InGaAs and Ge: a comparative 3D simulation study. In: Intel European Research and Innovation Conference, 12-14 Mar 2011, Dublin, Ireland.
Markov, S., Idris, N.M., and Asenov, A. (2011) Statistical variability in n-channel UTB-FD-SOI MOSFETs under the influence of RDF, LER, MGG and PBTI. In: 2011 IEEE International SOI Conference, 3-6 Oct 2011, Tempe, AZ.
Wang, X., Brown, A.R., Cheng, B., and Asenov, A. (2011) Statistical variability and reliability in nanoscale FinFETs. In: IEEE International Electron Devices Meeting (IEDM), 5-7 Dec 2011, Washington DC, USA.
Aldegunde, M., Martinez, A., and Asenov, A. (2010) Impact of scattering on the performance of a Si GAA Nanowire FET: from diffusive to ballistic regime. In: 14th International Workshop on Computational Electronics (IWCE), 27-29 Oct 2010, Pisa, Italy.
Asenov, A. (2010) Advanced Monte Carlo Techniques in the Simulation of CMOS Devices and Circuits. In: Numerical Methods and Applications 7th International Conference, 20-24 Aug 2010, Borovets, Bulgaria.
Asenov, A., and Cheng, B. (2010) Modeling and Simulation of Statistical Variability in Nanometer CMOS Technologies. In: 19th Workshop on Advances in Analog Circuit Design, Graz University of Technology.
Asenov, A., Cheng, B., Dideban, D., Kovac, U., Moezi, N., Millar, C., Roy, G., Brown, A., and Roy, S. (2010) Modeling and simulation of transistor and circuit variability and Reliability. In: Custom Integrated Circuit Conference (CICC), 19-22 September 2010, San Jose, CA, USA.
Asenov, P., Kamsani, N.A., Reid, D., Millar, C., Roy, S., and Asenov, A. (2010) Combining Process and Statistical Variability in the Evaluation of the Effectiveness of Corners in Digital Circuit Parametric Yield Analysis. In: ESSDERC 2010, 13-17 September, Sevilla .
Asenov, P., Reid, D., Millar, C., Roy, S., Liu, Z., Furber, S., and Asenov, A. (2010) Generic Aspects of Digital Circuit Behaviour In the Presence of Statistical Variability. In: VARI 2010.
Benbakhti, B., Kalna, K., Chan, K.H., Hellings, G., Eneman, G., De Meyer, K., Meuris, M., and Asenov, A. (2010) Design and Analysis of a New In53Ga47As Implant-Free Quantum-Well Device Structure. In: European Materials Research Society (EMRS), Spring Meeting, Strasbourg.
Benbakhti, B., Kalna, K., Wang, X., Cheng, B., Hellings, G., Eneman, G., De Meyer, K., Meuris, M., and Asenov, A. (2010) Impact of Raised Source/Drain in the In53Ga47As Channel Implant-Free Quantum-Well Transistor. In: 11th International Conference on Ultimate Integration Silicon (ULIS), 2010, Glasgow, UK.
Benbakhti, B., Towie, E., Kalna, K., Hellings, G., Eneman, G., De Meyer, K., Meuris, M., and Asenov, A. (2010) Monte Carlo Analysis of In0.53Ga0.47As implant-free Qqantum-well device performance. In: 2010 Silicon Nanoelectronics Workshop, 13-14 June 2010, Hilton Hawaiian Village, Honolulu, Hawaii.
Chan, K.H., Riddet, C., Benbakhti, B., Watling, J., and Asenov, A. (2010) Simulation and Optimization of Implant-Free Quantum Well Germanium p-MOSFET Design. In: European Materials Research Society (EMRS), Spring Meeting, Strasbourg.
Cheng, B., Dideban, D., Moezi, N., Millar, C., Roy, G., Wang, X., Roy, S., and Asenov, A. (2010) Capturing intrinsic parameter fluctuations using the PSP compact model. In: Proceedings of the Conference on Design, Automation and Test in Europe (DATE 2010), 8-12 March 2010, Dresden, Germany.
Cheng, B., Moezi, N., Dideban, D., Millar, C., Roy, S., and Asenov, A. (2010) Impact of Statistical Parameter set Selection on Accuracy of Statistical Compact Modelling. In: MOS-AK Workshop, 8-9 April 2010, Sapienza University, Rome, Italy.
Dideban, D., Cheng, B., Moezi, N., Kamsani, N.A., Millar, C., Roy, S., and Asenov, A. (2010) Impact of input slew rate on statistical timing and power dissipation variability in nanoCMOS. In: 11th International Conference on Ultimate Integration on Silicon, 17-19 Mar 2010, Glasgow, Scotland.
Dideban, D., Cheng, B., Moezi, N., Wang, X., and Asenov, A. (2010) Evaluation of 35nm MOSFET capacitance components in PSP compact model. In: 18th Iranian Conference on Electrical Engineering (ICEE), 2010 , 11-13 May 2010, Isfahan, Iran.
Garcia-Loureiro, A., Aldegunde, M., Seoane, N., Kalna, K., and Asenov, A. (2010) Impact of Random Dopant Fluctuations on a Tri-Gate MOSFET. In: 11th International Conference on Ultimate Integration on Silicon, 18-19 March 2010.
Idris, N.M., Brown, A., Watling, J., and Asenov, A. (2010) Simulation Study of Workfunction Variability in MOSFETs with Polycrystalline Metal Gates. In: 11th International Conference on Ultimate Integration Silicon (ULIS), Glasgow, UK.
Kamsani, N.A., Cheng, B., Millar, C., Moezi, N., Wang, X., Roy, S., and Asenov, A. (2010) Impact of slew rate definition on the accuracy of nanoCMOS inverter timing simulations. In: 11th International Conference on Ultimate Integration on Silicon, 17-19 Mar 2010, Glasgow, Scotland.
Kovac, U., Alexander, C., and Asenov, A. (2010) Statistical Estimation of Electrostatic and Transport Contributions to device Parameter Variation. In: 14th International Workshop on Computational Electronics, 27-29 October 2010.
Kovac, U., Alexander, C., Roy, G., Cheng, B., and Asenov, A. (2010) Compact Model Extraction from Quantum Corrected Statistical Monte Carlo Simulation of Random Dopant Induced Drain Current Variability. In: 8th International Conference on Advanced Semiconductor Devices and Microsystems, 25-27 Oct 2010. (In Press)
Kovac, U., Dideban, D., Cheng, B., Moezi, N., Roy, G., and Asenov, A. (2010) A novel approach to the statistical generation of non-normal distributed PSP compact model parameters using a nonlinear power method. In: 15th International Conference on Simulation of Semiconductor Preocesses and Devices (SISPAD), 6-8 Sep 2010, Bologna, Italy.
Martinez, A,, Seoane, N., Brown, A., and Asenov, A. (2010) A detailed 3D-NEGF simulation study of tunneling in a n-Si nanowire MOSFETs. In: 2010 Silicon Nanoelectronics Workshop, 13-14 June 2010, Honolulu, Hawaii.
Martinez, A., Aldegunde, M., and Asenov, A. (2010) Channel length dependence of discrete dopant effects in narrow si nanowire transistors: A full 3D NEGF study. In: 14th International Workshop on Computational Electronics (IWCE), 27-29 Oct 2010, Pisa, Italy.
Martinez, A., Benbakhti, B., and Asenov, A. (2010) Effect of the channel thickness on the performance of the implant-free quantum-well MOSFET. In: 14th International Workshop on Computational Electronics, 27-29 Oct 2010, Pisa, Italy.
Moore, I., Millar, C., Roy, S., and Asenov, A. (2010) Brownian noise in FET based nano-pore sensing a 3D simulation study. In: 14th International Workshop on Computational Electronics, 27-29 Oct 2010, Pisa, Italy.
Moore, I., Millar, C., Roy, S., and Asenov, A. (2010) Integrating drift diffusion and Brownian simulations for sensory applications. In: 11th International Conference on Ultimate Integration on Silicon, 17-19 Mar 2010, Glasgow, UK.
Riddet, C., Watling, J., Chan, K., and Asenov, A. (2010) Monte carlo simulation study of the impact of strain and substrate orientation on hole mobility on Geranium. In: 14th International Workshop on Computational Electronics (IWCE), 27-29 Oct 2010, Pisa, Italy.
Riddet, C., Watling, J., Chan, K.H., Asenov, A., De Jaeger, B., Mitard, J., and Meuris, M. (2010) Monte Carlo Simulation Study of Hole Mobility in Germanium MOS Inversion Layers. In: 14 International Workshop on Computational Electronics, 26-29 October 2010, Pisa, Italy.
Tang, T.B., Murray, A.F., Cheng, B., and Asenov, A. (2010) Statistical NBTI-effect prediction for ULSI circuits. In: IEEE International Symposium on Circuits and Systems, 30 May - 2 Jun 2010, Paris, France.
Watling, J., Riddet, C., Chan, K., and Asenov, A. (2010) Simulation of hole-mobility in doped relaxed and strained Ge layers. In: European Materials Research Society (EMRS), 2010, Spring Meeting, Strasbourg.
Davenhall, C., Harbulot, B., Jones, M., Stewart, G., Sinnott, R.O., Asenov, A., Millar, C., Roy, G., and Reid, D. (2009) Data management of nanometre scale CMOS device simulations. In: 5th International Digital Curation Conference, 2-4 Dec 2009, London, UK.
Hill, R.J.W. et al. (2009) Deep sub-micron and self-aligned flatband III–V MOSFETs. In: Device Research Conference, 2009 (DRC 2009), 22-24 Jun 2009, University Park, PA, USA.
Alexander, C., Kovac, U., Roy, G., Roy, S., and Asenov, A. (2009) A unified density gradient approach to 'ab-initio' ionized impurity scattering in 3D MC simulations of nano-CMOS variability. In: Ultimate Integration of Silicon: ULIS 2009, 18-20 Mar 2009, Aachen, Germany.
Bukhori, M.F., Roy, S., and Asenov, A. (2009) Simulation of statistical aspects of reliability in nano CMOS. In: IEEE International Integrated Reliability Workshop (IRW '09), 18-22 Oct 2009, S. Lake Tahoe, CA., U.S.A..
Cheng, B., Moezi, N., Dideban, D., Roy, G., Roy, S., and Asenov, A. (2009) Benchmarking the Accuracy of PCA Generated Statistical Compact Model Parameters Against Physical Device Simulation and Directly Extracted Statistical Parameters. In: Simulation of Semiconductor Processes and Devices, 2009, 9-11th September, 2009, San Diego, CA .
Kamsani, N.A., Cheng, B.J., Roy, S., and Asenov, A. (2009) Impact of Random Dopant Induced Statistical Variability on Inverter Switching Trajectories and Timing Variability. In: ISCAS: IEEE International Symposium on Circuits and Systems, 2009 .
Martinez, A., Brown, A., Seoane, N., and Asenov, A. (2009) Investigation of resistance in n-doped Si wires using NEGF formalism. In: Spanish Conference on Electron Devices (CDE 2009), 11-13 Feb 2009, Santiago de Compostela, Spain.
Martinez, A., Brown, A.R., Asenov, A., and Seoane, N. (2009) A comparison between a fully-3D real-space versus coupled mode-space NEGF in the study of variability in gate-all-around Si nanowire MOSFET. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2009), 9-11 September 2009, San Diego, California.
Martinez, A., Kalna, K., and Asenov, A. (2009) Impurity potential induced resonances in Doped Si nanowire: A NEGF approach. In: 9th IEEE Conference on Nanotechnology, 2009. IEEE-NANO 2009 , 26-30 Jul 2009, Genoa, Italy.
Reid, D., Millar, C., Roy, G., Roy, S., and Asenov, A. (2009) Efficient simulation of 6σ VT distribution due to random descrete dopants. In: 10th International Conference on Ultimate Integration of Silicon, 2009. ULIS 2009. , 18-20 Mar 2009, Aachen, Germany.
Reid, D., Millar, C., Roy, G., Roy, S., and Asenov, A. (2009) Understanding LER-induced statistical variability: a 35,000 sample 3D simulation study. In: European Solid State Device Research Conference, 2009. ESSDERC '09 , 14-18 Sep 2009, Athens, Greece.
Seoane, N., Martinez, A., Brown, A., and Asenov, A. (2009) Study of surface roughness in extremely small Si nanowire MOSFETs using fully-3D NEGFs. In: Spanish Conference on Electron Devices, 2009. CDE 2009. , 11-13 Feb 2009, Santiago de Compostela, Spain.
Twaddle, F., Cumming, D., Roy, S., Asenov, A., and Drysdale, T. (2009) Variability of short-range interconnects. In: 13th International Workshop on Computational Electronics, 27-29 May 2009, Beijing, China.
Twaddle, F.J., Cumming, D.R.S., Roy, S., Asenov, A., and Drysdale, T.D. (2009) RC variability of short-range interconnects. In: IWCE 2009: 13th International Workshop on Computational Electronics, 27-29 May 2009, Beijing, China.
Wang, X.S., Roy, S., and Asenov, A. (2009) Impact of strain on the performance of high-k/metal replacement gate MOSFETs. In: 10th International Conference on Ultimate Integration of Silicon, 18-20 March 2009, Aachen, Germany.
Hill, R., Moran, D., Li, X., Macintyre, D.S., Thoms, S., Asenov, A., Droopad, R., Passlack, M., and Thayne, I. (2008) III-V MOSFETs: a possible solution for sub-22 nm CMOS nFETs. In: 17th European Heterostructure Technology Workshop, Nov 2008, Venice, Italy.
Sinnott, R.O. et al. (2008) Scalable, security-oriented solutions for nanoCMOS electronics. In: UK e-Science All Hands Meeting , 8-11 Sept 2008, Edinburgh, UK.
Harbulot, B., Berry, D., Davenhall, C., Jones, M., Millar, C., Roy, G., Sinnott, R.O., Stewart, G., and Asenov, A. (2008) A resource-oriented data management architecture for nanoCMOS electronics. In: UK e-Science All Hands Meeting, 8-11 Sept 2008, Edinburgh, UK.
Asenov, A. (2008) Impact of the field induced polarization space-charge on the characteristics of AlGaN/GaN HEMT: self-consistent simulation study - Invited. In: 14th IEEE International Symposium on Asynchronous Circuits and Systems ASYNC 2008, 7-11th April, 2008, Newcastle, UK.
Asenov, A. (2008) Statistical device variability and its impact on low power digital circuit design. In: Proceeding FTFC 2008, 27-28 May 2008, Louvain La Neuve, Belgium.
Asenov, A. et al. (2008) Advanced simulation of statistical variability and reliability in nano CMOS transistors. In: IEDM 2008. IEEE International Electron Devices Meeting, 2008, 15-17 Dec 2008 , San Francisco, CA.
Asenov, A. et al. (2008) Meeting the design challenges of nano-CMOS electronics, design automation and test in Europe. In: Workshop on Impact of Process Variability on Design and Test, 10-14 Mar 2008, Munich, Germany.
Balaz, D., Kalna, K., Kuball, M., Uren, M., and Asenov, A. (2008) Impact of the Field Induced Polarization Space-Charge on the Characteristics of AlGaN/GaN HEMT: Self-Consistent Simulation Study. In: International Workshop On Nitride Semiconductors, Oct. 6-10, 2008, Montreux, Switzerland.
Bindu, B., Cheng, B., Roy, G., Wang, X., Roy, S., and Asenov, A. (2008) An efficient data sampling strategy for statistical parameter extraction of nano-MOSFETs. In: IEEE Workshop on Compact Modeling, 8 Sept 2008, Hakone, Japan.
Bukhori, M F, Roy, S, and Asenov, A (2008) Statistical simulation of RTS amplitude distribution in realistic bulk MOSFETs subject to random discreet dopants. In: 9th International Conference on Ultimate Integration of Silicon, 2008. ULIS 2008., Udine, Italy.
Kamsani, N.A., Cheng, B., Roy, S., and Asenov, A. (2008) Statistical circuit simulation with supply-voltage scaling in nanometre MOSFET devices under the influence of random dopant fluctuations. In: Faible Tension Faible Consommation (FTFC) 2008, 26-28 May 2008, Louvain La Neuve, Belgium.
Kamsani, N.A., Cheng, B., Roy, S., and Asenov, A. (2008) Statistical circuit simulation with the effect of random discrete dopants in nanometer MOSFET devices. In: Design Automation and Test in Europe: Workshop W2, Impact of Process Variability on Design and Test, 10-14 March 2008, Munich, Germany.
Markov, S., Roy, S., Fiegna, C., Sangiorgi, E., and Asenov, A. (2008) On the sub-nm EOT scaling of high-kappa gate stacks. In: International Conference on the Ultimate Integration of Silicon, 13-14 Mar 2008, Udine, Italy.
Martinez, A., Barker, J.R., Brown, A., Asenov, A., and Seoane, N. (2008) Simulation of impurities with an attractive potential in fully 3-D real-space Non-Equilibrium Green's Function quantum transport simulations. In: nternational Conference on Simulation of Semiconductor Processes and Devices, 2008, 9-11 Sept 2008, Hakone, Japan.
Reid, D., Millar, C., Asenov, A., Roy, S., Roy, G., Sinnott, R.O., and Stewart, G. (2008) Supporting statistical semiconductor device analysis using EGEE and OMII-UK middleware. In: EGEE User Conference, Feb 2008, Clermond Ferrand, France.
Reid, D., Sinnott, R.O., Millar, C., Roy, G., Roy, S., Stewart, G., Stewart, G., and Asenov, A. (2008) Enabling cutting-edge semiconductor simulation through grid technology. In: UK e-Science All Hands Meeting, 8-11 Sept 2008, Edinburgh, UK.
Riddet, C., and Asenov, A. (2008) Convergence properties of density gradient quantum corrections in 3D ensemble Monte Carlo simulations. In: International Conference on Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008, 9-11 Sept. 2008 , Hakone, Japan.
Sinnott, R.O., Berry, D., Harbulot, B., Millar, C., Reid, D., Roy, G., Roy, S., Stewart, G., and Asenov, A. (2008) Meeting the design challenges of nanoCMOS electronics through secure large-scale simulation and data management. In: EGEE'08, 22-26 Sep 2008, Istanbul, Turkey.
Wang, X., Cheng, B., Roy, S., and Asenov, A. (2008) Simulation of strain enhanced variability in nMOSFETs. In: 9th International Conference on Ultimate Integration of Silicon, 2008. ULIS 2008., 12-14 March 2008, Udine, Italy.
Passlack, M. et al. (2007) High mobility III-V MOSFETs for RF and digital applications. In: IEEE International Electron Devices Meeting (IEDM 2007), 10-12 December 2007, Washington DC, USA.
Asenov, A. et al. (2007) Meeting the design challenges of nanoCMOS electronics. In: Third International Nanotechnology Conference on Communication and Cooperation, 17-19 Apr 2007, Brussels, Belgium.
Han, L., Asenov, A., Berry, D., Millar, C., Roy, G., Roy, S., Sinnott, R.O., and Stewart, G. (2007) Towards a grid-enabled simulation framework for nano-CMOS electronics. In: 3rd IEEE International Conference on e-Science and Grid Computing, 10-13 Dec 2007, Bangalore, India.
Alexander, C, Roy, G, and Asenov, A (2006) Increased intrinsic parameter fluctuations through ab initio Monte Carlo simulations in nano-scaled MOSFETs. In: International Electron Devices Meeting 2006, IEDM, San Fransisco, CA, USA.
Asenov, A (2006) A 3D finite element parallel simulator for studying fluctuations in advanced MOSFETs. In: 11th International Workshop on Computational Electronics, IWCE 2006, Vienna, Austria.
Asenov, A, Brown, AR, Roy, G, Alexander, C, and Martinez, A (2006) Simulation of Atomic Scale Effects and Fluctuations in nano-scale CMOS. In: International Conference on Solid State Devices and Materials. (SSDM 2006)., Yokohama,Japan.
Asenov, A., and Samsudin, K. (2006) Variability in nanoscale SOI devices and its impact on circuits and systems. In: Nano Scaled Semiconductor-on-Insulator Structures and Devices, Crimea, Ukraine.
Bescond, M, Cavassilas, N, Asenov, A, and Lannoo, M (2006) Effective-mass approach for n-type semiconductor nanowire MOSFET's arbitrary oriented. In: 7 th European Workshop on ULtimate Integration of Silicon, ULIS 2006, Grenoble, France.
Brown, AR, Roy, G, and Asenov, A (2006) Impact of Fermi level pinning at polysilicon gate grain boundaries on nano-MOSFET variability:A 3-D simulation study. In: 34th European Solid State Devices Research Conference, Montreux, Switzerland.
Brown, AR, Watling, JR, and Asenov, A (2006) Intrinsic parameter fluctuations due to random grain orientation in the high-k stacks. In: 11th International Workshop on Computational Electronics, IWCE 2006, Vienna, Austria.
Cheng, B, Roy, S, and Asenov, A (2006) Low power, high density CMOS 6-T SRAM cell design subject to 'atomistic' fluctuations. In: 7th European Workshop on ULtimate Integration of Silicon, ULIS 2006, Grenoble, France.
Cheng, B, Roy, S, and Asenov, A (2006) The impact of intrinsic parameter fluctuations on decananometer circuits and circuit modelling techniques. In: Mixed Design of Integrated Circuits and System, MIXDES 2006, Gdynia, Poland.
Cheng, B, Roy, S, Roy, G, Brown, AR, and Asenov, A (2006) Design consideration of 6-T SRAM towards the End Of Bulk CMOS Technology scaling subjected to randon dopant fluctuations. In: 34th European Solid State Devices Research Conference, Montreux, Switzerland.
Ferrari, G, Jacoboni, C, Nedialkov, M, and Asenov, A (2006) Introducing energy broadening in semiclassical Monte Carlo simulations. In: 11th International Workshop on Computational Electronics, IWCE 2006, Vienna, Austria.
Ferrari, G, Watling, JR, Roy, S, Barker, JR, and Asenov, A (2006) Beyond SiO2 technology: The impact of high-k dielectrics. In: 6th symposium SiO2 , advanced dielectrics and related devices : SiO2006, Palermo, Italy.
Ferrari, G, Watling, JR, Roy, S, Barker, JR, Zeitzoff, P, Bersuker, G, and Asenov, A (2006) Monte Carlo study of mobility in Si devices with HfO2 based oxides. In: E-MRS IUMRS ICEM 2006, Nice, France.
Ferrari, G, Watling, JR, Roy, S, Barker, JR, Zeitzoff, P, Bersuker, G, and Asenov, A (2006) On the impact of high-k gate stacks on mobility: a Monte Carlo study including coupled SO phonon-plasmon scattering. In: 11th International Workshop on Computational Electronics, IWCE 2006, Vienna, Austria.
Kalna, K, Hill, R, Wilson, JA, Moran, DAJ, Long, AR, Asenov, A, and Thayne, IG (2006) Monte Carlo simulation of sub-30 nm high indium implant free III-V MOSFETs for low power digital applications. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.
Kalna, K, Wang, Q, Passlack, M, and Asenov, A (2006) MC simulation of delta doping placement in sub 100nm implant free InGaAs MOSFETs. In: E-MRS IUMRS ICEM 2006, Nice, France.
Kalna, K, Wilson, JA, Moran, DAJ, Hill, R, Long, AR, Droopad, R, Passlack, M, Thayne, IG, and Asenov, A (2006) MC simulation of high performance InGaAs nano-MOSFETs for low power CMOS applications. In: IEEE 2006 Silicon Nanoelectronics Workshop, Honolulu.
Kalna, K., Asenov, A., and Passlack, M. (2006) Monte Carlo simulation of implant free InGaAs MOSFET. In: Seventh International Conference on New Phenomena in Mesoscopic Structures and the Fifth International Conference on Surfaces and Interfaces of Mesoscopic Devices, 27 November - 2 December 2005, Maui, Hawaii.
Markov, S, Brown, AR, Cheng, B, Roy, G, Roy, S, and Asenov, A (2006) 3D statistical simulation of gate leakage fluctutations due to combined interface roughness and random dopants. In: International Conference on Solid State Devices and Materials. (SSDM 2006)., Yokohama,Japan.
Martinez, A, Barker, JR, Svizhenko, A, Anantram, A, Bescond, M, and Asenov, A (2006) Development of a Full 3D NEGF Nano-CMOS simulator. In: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2006, California,USA.
Martinez, A, Kalna, K, Barker, JR, and Asenov, A (2006) A study of the interface roughness effects in Si-nanowires using a full 3D NEGF approach. In: E-MRS IUMRS ICEM 2006, Nice, France.
Martinez, A., Barker, J.R., Anantram, A., Svizhenko, A., and Asenov, A. (2006) Developing a full 3D NEGF simulator with random dopant and interface roughness. In: 11th International Workshop on Computational Electronics, IWCE 2006, Vienna, Austria.
Martinez, A., Barker, J.R., Svizhenko, A., Anantram, A., and Asenov, A. (2006) The impact of random dopant aggregation in source and drain in the performance of ballistic DG nano-MOSFETs. In: IEEE 2006 Silicon Nanoelectronics Workshop, Honolulu.
Millar, C, Roy, S, and Asenov, A (2006) Simulation of Bio-Nano-CMOS devices. In: E-MRS IUMRS ICEM 2006, Nice, France.
Millar, C, Roy, S, Beckstein, O, Sansom, MSP, and Asenov, A (2006) Continuum versus particle simulation of model nano-pores. In: 11th International Workshop on Computational Electronics, IWCE 2006, Vienna, Austria.
Riddet, C, Brown, AR, Alexander, C, Roy, S, and Asenov, A (2006) Efficient density gradient quantum corrections for 3D Monte Carlo simulations. In: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2006, California,USA.
Roy, S, Cheng, B, and Asenov, A (2006) Impact of intrinsic parameter fluctuation in nano-CMOS devices on circuits and systems. In: International Topical Workshop on Tera- and Nano- Devices: Physics and Modelling, Aizu-Wakamatsu, Japan.
Samsudin, K, Adamu-Lema, F, Brown, AR, Roy, S, and Asenov, A (2006) Intrinsic parameter fluctuations in sub-10nm generation UTB SOI MOSFETs. In: 7 th European Workshop on ULtimate Integration of Silicon, ULIS 2006, Grenoble, France.
Seoane, N, Garcia-Loureiro, AJ, Kalna, K, and Asenov, A (2006) A 3D parallel simulation of the effect of interface charge fluctuations in HEMTs. In: 11th International Workshop on Computational Electronics, IWCE 2006, Vienna, Austria.
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Asenov, A., and Kalna, K. (2000) Effect of oxide interface roughness on the threshold voltage fluctuations in decanano MOSFETs with ultrathin gate oxides. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2000), 6-8 September 2000, Seattle, Washington.
Kalna, K., Asenov, A., Elgaid, K., and Thayne, I. (2000) Effect of impact ionization in scaled pHEMTs. In: 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications., 13-14 November 2000, Glasgow, UK.
Kalna, K., Asenov, A., Elgaid, K., and Thayne, I. (2000) Performance of aggressively scaled pseudomorphic HEMTs: a monte carlo simulation study. In: Third International EuroConference on Advanced Semiconductor Devices and Microsystems., 16-18 October 2000, Smolenice Castle, Slovakia.
Kalna, K., Roy, S., Asenov, A., Elgaid, K., and Thayne, I. (2000) RF analysis of aggressively scaled pHEMTs. In: 30th European Solid-State Device Research Conference., 11-13 September 2000, Cork, Ireland.
Watling, J.R., Barker, J.R., and Asenov, A. (2000) Soft sphere model for electron correlation and scattering in the atomistic modelling of semiconductor devices. In: International Workshop on Computational Electronics, 22-25 May 2000, Glasgow, UK.
Watling, J.R., Zhao, Y.P., Asenov, A., and Barker, J.R. (2000) Nonequilibrium hole transport in deep sub-micron well-tempered Si p-MOSFETs. In: 7th International Workshop on Computational Electronics, 22-25 May 2000, Glasgow, UK.
Zhao, Y.P. et al. (2000) Indication of Non-equilibrium Transport in SiGe p-MOSFETs. In: 30th European Solid-State Device Research Conference, 11-13 September 2000, Cork, Ireland.
Asenov, A., Slavcheva, G., Brown, A.R., Davies, J.H., and Saini, S. (1999) Quantum mechanical enhancement of the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs. In: International Electron Devices Meeting, 5-8 December 1999, Washington, DC.
Roy, S., Kaya, S., Asenov, A., and Barker, J.R. (1999) RF analysis methodology for Si and SiGe FETs based on transient Monte Carlo simulation. In: International Conference on Simulation of Semiconductor Processes and Devices., 6-8 September 1999, Kyoto, Japan.
Asenov, A. (1998) Efficient 3D `atomistic' simulation technique for studying of random dopant induced threshold voltage lowering and fluctuations in decanano MOSFETs. In: International Workshop on Computational Electronics, 19-21 October 1998, Osaka, Japan.
Asenov, A. (1998) Random dopant threshold voltage fluctuations in 50 nm epitaxial channel MOSFETs: a 3D 'atomistic' simulation study. In: ESSDERC '98 : 28rd Conference on European Solid-State Devices, 8-10 September 1998, Bordeaux, France.
Asenov, A., Brown, A.R., and Roy, S. (1998) Parallel semiconductor device simulation: from power to 'atomistic' devices. In: International Workshop on Computational Electronics, 19-21 October 1998, Osaka, Japan.
Babiker, S., Asenov, A., Roy, S., Barker, J.R., and Beaumont, S.P. (1998) Strain engineered InxGa1-xAs channel pHEMTs on virtual substrates: a simulation study. In: International Workshop on Computational Electronics, 19-21 October 1998, Osaka, Japan.
Roy, S., Kaya, S., Babiker, S., Asenov, A., and Barker, J.R. (1998) Monte Carlo investigation of optimal device architectures for SiGe FETs. In: International Workshop on Computational Electronics, 19-21 October 1998, Osaka, Japan.
Watling, J.R., Asenov, A., and Barker, J.R. (1998) Efficient hole transport model in warped bands for use in the simulation of Si/SiGe MOSFETs. In: International Workshop on Computational Electronics, 19-21 October 1998, Osaka, Japan.
Borsosfoldi, Z., Webster, D.R., Thayne, I.G., Asenov, A., Haigh, D.G., and Beaumont, S.P. (1997) Ultra-linear pseudomorphic HEMTs for wireless communications: A simulation study. In: IEEE International Symposium on Compound Semiconductors, 8-11 September 1997, San Diego, California.
Roy, S., Asenov, A., Babiker, S., Barker, J.R., and Beaumont, S.P. (1997) RF performance of strained Si MODFETs and MOSFETs on "virtual" SiGe substrates: A Monte Carlo study. In: European Solid-State Device Research Conference, 22-24 September 1997, Stuttgart, Germany.
6 PhD students