Dr Gary Paterson

  • Research Associate (Physics & Astronomy)

Publications

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Jump to: 2019 | 2018 | 2017 | 2016 | 2015 | 2012 | 2011 | 2010 | 2009 | 2008 | 2007 | 2006
Number of items: 40.

2019

Nord, M. et al. (2019) Strain anisotropy and magnetic domains in embedded nanomagnets. Small, (doi:10.1002/smll.201904738) (Early Online Publication)

Paterson, G. W. et al. (2019) Heisenberg pseudo-exchange and emergent anisotropies in field-driven pinwheel artificial spin ice. Physical Review B, 100(17), 174410. (doi:10.1103/PhysRevB.100.174410)

Macauley, G. M., Paterson, G. W. , Li, Y., Macêdo, R. , McVitie, S. and Stamps, R. L. (2019) Ice-rule made manifold: phase transitions, topological defects and manifold restoration in two-dimensional artificial spin systems. arXiv, (Unpublished)

Bertram, J., Tanwear, A., Rodriguez, A., Paterson, G. , McVitie, S. and Heidari, H. (2019) Spin-Hall Nano-Oscillator Simulations. In: IEEE Sensors 2019, Montreal, QC, Canada, 27-30 Oct 2019, (Accepted for Publication)

Paterson, G. W. et al. (2019) Order and disorder in the magnetisation of the chiral crystal CrNb3S6. Physical Review B, 99, 224429. (doi:10.1103/PhysRevB.99.224429)

Paterson, G. W. , Lamb, R. J., Ballabriga, R., Maneuski, D., O'Shea, V. and McGrouther, D. (2019) Sub-100 nanosecond temporally resolved imaging with the Medipix3 direct electron detector. arXiv, (Unpublished)

Goncalves, F.J.T., Shimamoto, Y., Sogo, T., Paterson, G.W. , Kousaka, Y. and Togawa, Y. (2019) Effect of disorder on the collective excitations of the chiral spin soliton lattice. arXiv, (Unpublished)

Li, Y. et al. (2019) Superferromagnetism and domain-wall topologies in artificial 'pinwheel' spin ice. ACS Nano, 13(2), pp. 2213-2222. (doi:10.1021/acsnano.8b08884) (PMID:30588800)

Togawa, Y., Kishine, J., Nosov, P.A., Koyama, T., Paterson, G.W. , McVitie, S. , Kousaka, Y., Akimitsu, J., Ogata, M. and Ovchinnikov, A.S. (2019) Anomalous temperature behavior of the chiral spin helix in CrNb3S6 thin lamellae. Physical Review Letters, 122(1), 017204. (doi:10.1103/PhysRevLett.122.017204)

2018

Almeida, T. P. , Temple, R., Massey, J., Fallon, K., Paterson, G. , Moore, T., McGrouther, D. , Marrows, C. H. and McVitie, S. (2018) Quantitative Differential Phase Contrast Imaging of the Magnetostructural Transition and Current-driven Motion of Domain Walls in FeRh Thin Films. Microscopy and Microanalysis (M&M 2018), Baltimore, MD, USA, 05-09 Aug 2018. (doi:10.1017/S1431927618005172)

Paterson, G. W. , Karimullah, A. S. , Smith, S. G., Kadodwala, M. and MacLaren, D. A. (2018) Symmetry reduction and shape effects in concave chiral plasmonic structures. Journal of Physical Chemistry C, 122(9), pp. 5049-5056. (doi:10.1021/acs.jpcc.7b12260)

Vidal Laveda, J., Johnston, B., Paterson, G. W. , Baker, P. J., Tucker, M. G., Playford, H. Y., Jensen, K. M. Ø., Billinge, S. J.L. and Corr, S. A. (2018) Structure–property insights into nanostructured electrodes for Li-ion batteries from local structural and diffusional probes. Journal of Materials Chemistry A, 6(1), pp. 127-137. (doi:10.1039/C7TA04400C)

2017

Goncalves, F.J.T., Paterson, G.W. , McGrouther, D. , Drysdale, T., Togawa, Y., Schmool, D.S. and Stamps, R.L. (2017) Probing microwave fields and enabling in-situ experiments in a transmission electron microscope. Scientific Reports, 7, 11064. (doi:10.1038/s41598-017-11009-2) (PMID:28894134) (PMCID:PMC5593874)

El-Shinawi, H., Paterson, G. W. , MacLaren, D. A. , Cussen, E. J. and Corr, S. A. (2017) Low-temperature densification of Al-doped Li7La3Zr2O12: A reliable and controllable synthesis of fast-ion conducting garnets. Journal of Materials Chemistry A, 5(1), pp. 319-329. (doi:10.1039/C6TA06961D)

2016

Goncalves, F.J.T., Paterson, G.W. , Stamps, R.L. , O'Reilly, S., Bowman, R., Gubbiotti, G. and Schmool, D.S. (2016) Competing anisotropies in exchange-biased nanostructured thin films. Physical Review B, 94(5), 054417. (doi:10.1103/PhysRevB.94.054417)

Parreira, P. , Paterson, G. W. , McVitie, S. and MacLaren, D. A. (2016) Stability, bistability and instability of amorphous ZrO2 resistive memory devices. Journal of Physics D: Applied Physics, 49(9), 095111. (doi:10.1088/0022-3727/49/9/095111)

Laveda, J. V., Chandhok, V., Murray, C. A., Paterson, G. W. and Corr, S. A. (2016) Fast microwave treatments of single source alkoxides for nanostructured Li-ion battery electrodes. Chemical Communications, 52, pp. 9028-9031. (doi:10.1039/c5cc07732j) (PMID:26486274)

2015

Paterson, G.W. , Goncalves, F.J.T., McFadzean, S., O'Reilly, S., Bowman, R. and Stamps, R.L. (2015) Magnetic characteristics of a high-layer-number NiFe/FeMn multilayer. Journal of Applied Physics, 118(20), 203903. (doi:10.1063/1.4936199)

Paterson, G. W. , Karimullah, A. , Williamson, S. D. R., Kadodwala, M. and MacLaren, D. A. (2015) Electron energy loss spectroscopy of a chiral plasmonic structure. Journal of Physics: Conference Series, 644(1), 012005. (doi:10.1088/1742-6596/644/1/012005)

2012

Paterson, G.W. , Holland, M.C., Thayne, I.G. and Long, A.R. (2012) Modeling and analysis of the admittance characteristics of n+ metal-oxide-semiconductor capacitors with oxide and interface states - Gd0.25Ga0.15O0.6/Ga2O3 on In0.53Ga0.47As. Journal of Applied Physics, 111(7), 074109. (doi:10.1063/1.3702468)

Paterson, G.W. , Bentley, S.J., Holland, M.C., Thayne, I.G. , Ahn, J., Long, R.D., McIntyre, P.C. and Long, A.R. (2012) Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors. Journal of Applied Physics, 111(10), p. 104112. (doi:10.1063/1.4720940)

2011

Paterson, G.W. , Bentley, S.J., Holland, M.C., Thayne, I.G. and Long, A.R. (2011) Electrical characteristics of gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As in metal-oxide-semiconductor field effect transistors - admittance and subthreshold characteristics. Journal of Applied Physics, 110(5), 054103. (doi:10.1063/1.3631076)

Oxland, R. K., Paterson, G. W. , Long, A. R. and Rahman, F. (2011) Indium phosphide heterojunction bipolar transistors as magnetic field sensors. IEEE Transactions on Electron Devices, 58(5), pp. 1534-1540. (doi:10.1109/ted.2011.2111420)

Bentley, S. et al. (2011) Electron mobility in surface- and buried- channel flatband In0.53Ga0.47As MOSFETs with ALD Al2O3 gate dielectric. IEEE Electron Device Letters, 32(4), pp. 494-496. (doi:10.1109/LED.2011.2107876)

Paterson, G.W. , Holland, M.C., Bentley, S.J., Thayne, I.G. and Long, A.R. (2011) Gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As n+ MOS capacitors: The interface state model and beyond. Journal of Applied Physics, 109(12), p. 124112. (doi:10.1063/1.3599895)

Paterson, G.W. , Holland, M.C., Thayne, I.G. and Long, A.R. (2011) Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses. Journal of Applied Physics, 110(11), p. 114115. (doi:10.1063/1.3665720)

2010

Oxland, R.K., Paterson, G.W. , Long, A.R. and Rahman, F. (2010) Using surface and magnetotransport effects for magnetic field sensing in ferromagnet-bipolar hybrid sensors. Solid-State Electronics, 54(4), pp. 427-432. (doi:10.1016/j.sse.2009.11.008)

Longo, P., Holland, M.C., Paterson, G.W. , Craven, A.J. and Thayne, I.G. (2010) An EELS sub-nanometer investigation of the dielectric gate stack for the realization of InGaAs based MOSFET devices. Journal of Physics: Conference Series, 241, 012034. (doi:10.1088/1742-6596/241/1/012034)

Peralagu, U. , Holland, M.C., Paterson, G.W. and Thayne, I.G. (2010) Strain additivity and its impact on the hole mobility of InxGa1-xAs channels for III-V pMOSFETs. In: 19th European Workshop on Heterostructure Technology, Crete, Greece, 18-20 Oct 2010,

Peralagu, U. , Holland, M.C., Paterson, G.W. and Thayne, I.G. (2010) The impact of strain engineering on hole mobility of In(x)Ga(1-x)As channels for III-V pMOSFET. In: TECHCON 2010, Austin, TX, USA, 13 - 14 September 2010,

2009

Ayubi-Moak, J.S., Benbakhti, B., Kalna, K., Paterson, G.W. , Hill, R., Passlack, M., Thayne, I.G. and Asenov, A. (2009) Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs. Microelectronic Engineering, 86(7-9), pp. 1564-1567. (doi:10.1016/j.mee.2009.03.024)

Holland, M., Longo, P., Paterson, G.W. , Reid, W., Long, A., Stanley, C.R., Craven, A.J., Thayne, I.G. and Gregory, R. (2009) Characteristics of Gd-GaO grown by MBE. Microelectronic Engineering, 86(3), pp. 244-248. (doi:10.1016/j.mee.2008.01.043)

Longo, P., Paterson, G.W. , Holland, M.C., Thayne, I.G. and Craven, A.J. (2009) A nanoanalytical investigation of the Ga2O3/GaGdO dielectric gate stack for InGaAs based MOSFET devices. Microelectronic Engineering, 86(7-9), pp. 1568-1570. (doi:10.1016/j.mee.2009.03.131)

2008

Paterson, G.W. , Longo, P., Wilson, J.A., Craven, A.J., Long, A.R., Thayne, I.G., Passlack, M. and Droopad, R. (2008) Gallium oxide and gadolinium gallium oxide insulators on Si δ-doped GaAs/AlGaAs heterostructures. Journal of Applied Physics, 104(10), p. 103719. (doi:10.1063/1.3029661)

Kalna, K. et al. (2008) III-V MOSFETs for digital applications with silicon co-integration. In: 7th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice, Slovakia, 12-16 October 2008, pp. 39-46. ISBN 9781424423255 (doi:10.1109/ASDAM.2008.4743354)

2007

Holland, M., Stanley, C.R., Reid, W., Hill, R.J.W., Moran, D.A.J., Thayne, I., Paterson, G.W. and Long, A.R. (2007) Ga2O3 grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25(5), pp. 1706-1710. (doi:10.1116/1.2778690)

Holland, M., Stanley, C.R., Reid, W., Thayne, I. , Paterson, G.W. , Long, A.R., Longo, P., Scott, J. , Craven, A.J. and Gregory, R. (2007) GdGaO: a gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25(3), pp. 1024-1028. (doi:10.1116/1.2738480)

Moran, D.A.J. et al. (2007) High Performance Enhancement Mode III-V MOSFETs. IBM Workshop on Advanced Oxides, Zurich, Switzerland, June 2007.

Thayne, I.G. et al. (2007) Recent Progress in III-V MOSFETs. In: UK Condensed Matter and Material Physics Conference, Leicester, UK, April 2007,

2006

Paterson, G.W. , Wilson, J.A., Moran, D. , Hill, R., Long, A.R., Thayne, I. , Passlack, M. and Droopad, R. (2006) Gallium oxide (Ga2O3)on gallium arsenide - A low defect, high-K system for future devices. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 135(3), pp. 277-281. (doi:10.1016/j.mseb.2006.08.026)

This list was generated on Sat Nov 16 22:53:26 2019 GMT.
Number of items: 40.

Articles

Nord, M. et al. (2019) Strain anisotropy and magnetic domains in embedded nanomagnets. Small, (doi:10.1002/smll.201904738) (Early Online Publication)

Paterson, G. W. et al. (2019) Heisenberg pseudo-exchange and emergent anisotropies in field-driven pinwheel artificial spin ice. Physical Review B, 100(17), 174410. (doi:10.1103/PhysRevB.100.174410)

Macauley, G. M., Paterson, G. W. , Li, Y., Macêdo, R. , McVitie, S. and Stamps, R. L. (2019) Ice-rule made manifold: phase transitions, topological defects and manifold restoration in two-dimensional artificial spin systems. arXiv, (Unpublished)

Paterson, G. W. et al. (2019) Order and disorder in the magnetisation of the chiral crystal CrNb3S6. Physical Review B, 99, 224429. (doi:10.1103/PhysRevB.99.224429)

Paterson, G. W. , Lamb, R. J., Ballabriga, R., Maneuski, D., O'Shea, V. and McGrouther, D. (2019) Sub-100 nanosecond temporally resolved imaging with the Medipix3 direct electron detector. arXiv, (Unpublished)

Goncalves, F.J.T., Shimamoto, Y., Sogo, T., Paterson, G.W. , Kousaka, Y. and Togawa, Y. (2019) Effect of disorder on the collective excitations of the chiral spin soliton lattice. arXiv, (Unpublished)

Li, Y. et al. (2019) Superferromagnetism and domain-wall topologies in artificial 'pinwheel' spin ice. ACS Nano, 13(2), pp. 2213-2222. (doi:10.1021/acsnano.8b08884) (PMID:30588800)

Togawa, Y., Kishine, J., Nosov, P.A., Koyama, T., Paterson, G.W. , McVitie, S. , Kousaka, Y., Akimitsu, J., Ogata, M. and Ovchinnikov, A.S. (2019) Anomalous temperature behavior of the chiral spin helix in CrNb3S6 thin lamellae. Physical Review Letters, 122(1), 017204. (doi:10.1103/PhysRevLett.122.017204)

Paterson, G. W. , Karimullah, A. S. , Smith, S. G., Kadodwala, M. and MacLaren, D. A. (2018) Symmetry reduction and shape effects in concave chiral plasmonic structures. Journal of Physical Chemistry C, 122(9), pp. 5049-5056. (doi:10.1021/acs.jpcc.7b12260)

Vidal Laveda, J., Johnston, B., Paterson, G. W. , Baker, P. J., Tucker, M. G., Playford, H. Y., Jensen, K. M. Ø., Billinge, S. J.L. and Corr, S. A. (2018) Structure–property insights into nanostructured electrodes for Li-ion batteries from local structural and diffusional probes. Journal of Materials Chemistry A, 6(1), pp. 127-137. (doi:10.1039/C7TA04400C)

Goncalves, F.J.T., Paterson, G.W. , McGrouther, D. , Drysdale, T., Togawa, Y., Schmool, D.S. and Stamps, R.L. (2017) Probing microwave fields and enabling in-situ experiments in a transmission electron microscope. Scientific Reports, 7, 11064. (doi:10.1038/s41598-017-11009-2) (PMID:28894134) (PMCID:PMC5593874)

El-Shinawi, H., Paterson, G. W. , MacLaren, D. A. , Cussen, E. J. and Corr, S. A. (2017) Low-temperature densification of Al-doped Li7La3Zr2O12: A reliable and controllable synthesis of fast-ion conducting garnets. Journal of Materials Chemistry A, 5(1), pp. 319-329. (doi:10.1039/C6TA06961D)

Goncalves, F.J.T., Paterson, G.W. , Stamps, R.L. , O'Reilly, S., Bowman, R., Gubbiotti, G. and Schmool, D.S. (2016) Competing anisotropies in exchange-biased nanostructured thin films. Physical Review B, 94(5), 054417. (doi:10.1103/PhysRevB.94.054417)

Parreira, P. , Paterson, G. W. , McVitie, S. and MacLaren, D. A. (2016) Stability, bistability and instability of amorphous ZrO2 resistive memory devices. Journal of Physics D: Applied Physics, 49(9), 095111. (doi:10.1088/0022-3727/49/9/095111)

Laveda, J. V., Chandhok, V., Murray, C. A., Paterson, G. W. and Corr, S. A. (2016) Fast microwave treatments of single source alkoxides for nanostructured Li-ion battery electrodes. Chemical Communications, 52, pp. 9028-9031. (doi:10.1039/c5cc07732j) (PMID:26486274)

Paterson, G.W. , Goncalves, F.J.T., McFadzean, S., O'Reilly, S., Bowman, R. and Stamps, R.L. (2015) Magnetic characteristics of a high-layer-number NiFe/FeMn multilayer. Journal of Applied Physics, 118(20), 203903. (doi:10.1063/1.4936199)

Paterson, G. W. , Karimullah, A. , Williamson, S. D. R., Kadodwala, M. and MacLaren, D. A. (2015) Electron energy loss spectroscopy of a chiral plasmonic structure. Journal of Physics: Conference Series, 644(1), 012005. (doi:10.1088/1742-6596/644/1/012005)

Paterson, G.W. , Holland, M.C., Thayne, I.G. and Long, A.R. (2012) Modeling and analysis of the admittance characteristics of n+ metal-oxide-semiconductor capacitors with oxide and interface states - Gd0.25Ga0.15O0.6/Ga2O3 on In0.53Ga0.47As. Journal of Applied Physics, 111(7), 074109. (doi:10.1063/1.3702468)

Paterson, G.W. , Bentley, S.J., Holland, M.C., Thayne, I.G. , Ahn, J., Long, R.D., McIntyre, P.C. and Long, A.R. (2012) Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors. Journal of Applied Physics, 111(10), p. 104112. (doi:10.1063/1.4720940)

Paterson, G.W. , Bentley, S.J., Holland, M.C., Thayne, I.G. and Long, A.R. (2011) Electrical characteristics of gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As in metal-oxide-semiconductor field effect transistors - admittance and subthreshold characteristics. Journal of Applied Physics, 110(5), 054103. (doi:10.1063/1.3631076)

Oxland, R. K., Paterson, G. W. , Long, A. R. and Rahman, F. (2011) Indium phosphide heterojunction bipolar transistors as magnetic field sensors. IEEE Transactions on Electron Devices, 58(5), pp. 1534-1540. (doi:10.1109/ted.2011.2111420)

Bentley, S. et al. (2011) Electron mobility in surface- and buried- channel flatband In0.53Ga0.47As MOSFETs with ALD Al2O3 gate dielectric. IEEE Electron Device Letters, 32(4), pp. 494-496. (doi:10.1109/LED.2011.2107876)

Paterson, G.W. , Holland, M.C., Bentley, S.J., Thayne, I.G. and Long, A.R. (2011) Gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As n+ MOS capacitors: The interface state model and beyond. Journal of Applied Physics, 109(12), p. 124112. (doi:10.1063/1.3599895)

Paterson, G.W. , Holland, M.C., Thayne, I.G. and Long, A.R. (2011) Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses. Journal of Applied Physics, 110(11), p. 114115. (doi:10.1063/1.3665720)

Oxland, R.K., Paterson, G.W. , Long, A.R. and Rahman, F. (2010) Using surface and magnetotransport effects for magnetic field sensing in ferromagnet-bipolar hybrid sensors. Solid-State Electronics, 54(4), pp. 427-432. (doi:10.1016/j.sse.2009.11.008)

Longo, P., Holland, M.C., Paterson, G.W. , Craven, A.J. and Thayne, I.G. (2010) An EELS sub-nanometer investigation of the dielectric gate stack for the realization of InGaAs based MOSFET devices. Journal of Physics: Conference Series, 241, 012034. (doi:10.1088/1742-6596/241/1/012034)

Ayubi-Moak, J.S., Benbakhti, B., Kalna, K., Paterson, G.W. , Hill, R., Passlack, M., Thayne, I.G. and Asenov, A. (2009) Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs. Microelectronic Engineering, 86(7-9), pp. 1564-1567. (doi:10.1016/j.mee.2009.03.024)

Holland, M., Longo, P., Paterson, G.W. , Reid, W., Long, A., Stanley, C.R., Craven, A.J., Thayne, I.G. and Gregory, R. (2009) Characteristics of Gd-GaO grown by MBE. Microelectronic Engineering, 86(3), pp. 244-248. (doi:10.1016/j.mee.2008.01.043)

Longo, P., Paterson, G.W. , Holland, M.C., Thayne, I.G. and Craven, A.J. (2009) A nanoanalytical investigation of the Ga2O3/GaGdO dielectric gate stack for InGaAs based MOSFET devices. Microelectronic Engineering, 86(7-9), pp. 1568-1570. (doi:10.1016/j.mee.2009.03.131)

Paterson, G.W. , Longo, P., Wilson, J.A., Craven, A.J., Long, A.R., Thayne, I.G., Passlack, M. and Droopad, R. (2008) Gallium oxide and gadolinium gallium oxide insulators on Si δ-doped GaAs/AlGaAs heterostructures. Journal of Applied Physics, 104(10), p. 103719. (doi:10.1063/1.3029661)

Holland, M., Stanley, C.R., Reid, W., Hill, R.J.W., Moran, D.A.J., Thayne, I., Paterson, G.W. and Long, A.R. (2007) Ga2O3 grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25(5), pp. 1706-1710. (doi:10.1116/1.2778690)

Holland, M., Stanley, C.R., Reid, W., Thayne, I. , Paterson, G.W. , Long, A.R., Longo, P., Scott, J. , Craven, A.J. and Gregory, R. (2007) GdGaO: a gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25(3), pp. 1024-1028. (doi:10.1116/1.2738480)

Paterson, G.W. , Wilson, J.A., Moran, D. , Hill, R., Long, A.R., Thayne, I. , Passlack, M. and Droopad, R. (2006) Gallium oxide (Ga2O3)on gallium arsenide - A low defect, high-K system for future devices. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 135(3), pp. 277-281. (doi:10.1016/j.mseb.2006.08.026)

Conference or Workshop Item

Almeida, T. P. , Temple, R., Massey, J., Fallon, K., Paterson, G. , Moore, T., McGrouther, D. , Marrows, C. H. and McVitie, S. (2018) Quantitative Differential Phase Contrast Imaging of the Magnetostructural Transition and Current-driven Motion of Domain Walls in FeRh Thin Films. Microscopy and Microanalysis (M&M 2018), Baltimore, MD, USA, 05-09 Aug 2018. (doi:10.1017/S1431927618005172)

Moran, D.A.J. et al. (2007) High Performance Enhancement Mode III-V MOSFETs. IBM Workshop on Advanced Oxides, Zurich, Switzerland, June 2007.

Conference Proceedings

Bertram, J., Tanwear, A., Rodriguez, A., Paterson, G. , McVitie, S. and Heidari, H. (2019) Spin-Hall Nano-Oscillator Simulations. In: IEEE Sensors 2019, Montreal, QC, Canada, 27-30 Oct 2019, (Accepted for Publication)

Peralagu, U. , Holland, M.C., Paterson, G.W. and Thayne, I.G. (2010) Strain additivity and its impact on the hole mobility of InxGa1-xAs channels for III-V pMOSFETs. In: 19th European Workshop on Heterostructure Technology, Crete, Greece, 18-20 Oct 2010,

Peralagu, U. , Holland, M.C., Paterson, G.W. and Thayne, I.G. (2010) The impact of strain engineering on hole mobility of In(x)Ga(1-x)As channels for III-V pMOSFET. In: TECHCON 2010, Austin, TX, USA, 13 - 14 September 2010,

Kalna, K. et al. (2008) III-V MOSFETs for digital applications with silicon co-integration. In: 7th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice, Slovakia, 12-16 October 2008, pp. 39-46. ISBN 9781424423255 (doi:10.1109/ASDAM.2008.4743354)

Thayne, I.G. et al. (2007) Recent Progress in III-V MOSFETs. In: UK Condensed Matter and Material Physics Conference, Leicester, UK, April 2007,

This list was generated on Sat Nov 16 22:53:26 2019 GMT.

Research datasets

Jump to: 2019 | 2018 | 2016 | 2015
Number of items: 7.

2019

Nord, M., Semisalova, A., Kakay, A., Hlawacek, G., MacLaren, I. , Liersch, V., Volkov, O., Makarov, D., Paterson, G. , Potzger, K., Lindner, J., Fassbender, J., McGrouther, D. and Bali, R. (2019) Strain Anisotropy and Magnetic Domains in Embedded Nanomagnets. [Data Collection]

Paterson, G. , Macauley, G., Li, Y., Macedo, R., Ferguson, C., Morley, S., Rosamond, M., Linfield, E., Marrows, C., Stamps, R. and McVitie, S. (2019) Heisenberg pseudo-exchange and emergent anisotropies in field-driven pinwheel artificial spin ice. [Data Collection]

Paterson, G. , Koyama, T., Shinozaki, M., Masaki, Y., Goncalves, F., Shimamoto, Y., Sogo, T., Nord, M., Kousaka, Y., Kato, Y., McVitie, S. and Togawa, Y. (2019) Order and Disorder in the Magnetisation of the Chiral Crystal CrNb3S6. [Data Collection]

Li, Y., Paterson, G., Macauley, G., Nascimento, F. S., Ferguson, C., Morley, S. A., Rosamond, M. C., Linfield, E. H., MacLaren, D. , Macedo, R. , Marrows, C. H., McVitie, S. and Stamps, R. (2019) Superferromagnetism and Domain-Wall Topologies in Artificial 'Pinwheel' Spin Ice. [Data Collection]

2018

Paterson, G., Karimullah, A. , Smith, S., Kadodwala, M. and MacLaren, D. (2018) Symmetry Reduction and Shape Effects in Concave Chiral Plasmonic Structures. [Data Collection]

2016

Parreira, P. , Paterson, G., McVitie, S. and MacLaren, D. (2016) Stability, bistability and instability of amorphous ZrO2 resistive memory devices. [Data Collection]

2015

Paterson, G., Karimullah, A. , Williamson, S. D. R., Kadodwala, M. and MacLaren, D. (2015) Electron energy loss spectroscopy of a chiral plasmonic structure. [Data Collection]

This list was generated on Sat Nov 16 22:53:29 2019 GMT.