Mr Yen-Chun Fu

  • Research Assistant (Electronic & Nanoscale Engineering)

Publications

List by: Type | Date

Jump to: 2018 | 2017 | 2016 | 2015
Number of items: 15.

2018

Zhou, H., Fu, Y.-C., Mirza, M. M.A. and Li, X. (2018) Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 and HfO2 Films Investigated by Using in situ Auger Electron Spectroscopy. AVS 18th International Conference on Atomic Layer Deposition (ALD) Featuring the 5th International Atomic Layer Etching Workshop (ALE), Incheon, Korea, 29 Jul - 01 Aug 2018.

2017

Fu, Y.-C., Li, X. , Peralagu, U. , Millar, D., Steer, M., Zhou, H., Droopad, R. and Thayne, I.G. (2017) The Impact of In-situ Hydrogen Plasma Passivation Prior to ALD HfO2 Deposition on the Electrical Properties of ICP Etched P-type InGaAs (110) MOSCAPs. 48th IEEE Semiconductor Interface Specialists Conference (SISC 2017), San Diego, CA, USA, 6-9 Dec 2017.

Millar, D. et al. (2017) Electrical and Chemical Analysis of the In-situ H2 Plasma Cleaned InGaSb-Al2O3 Interface. 48th IEEE Semiconductor Interface Specialists Conference (SISC 2017), San Diego, CA, USA, 6 -9 Dec 2017.

Li, X. , Fu, Y.-C. and Thayne, I.G. (2017) A Process Development on Inductively Coupled Plasma Reactive Ion Etching in Cl2/BCl3 Chemistry for Fabricating GaN-based Vertical Nanowires. 43rd International Conference on Micro and Nanoengineering (MNE 2017), Braga, Portugal, 18-22 Sept 2017.

Li, X. et al. (2017) Atomic layer etch processes developed in an ICP/RIE etching system for etching III-V compound semiconductor materials. AVS 17th International Conference on Atomic Layer Deposition (ALD 2017) featuring the 4th International Atomic Layer Etching Workshop (ALE 2017), Denver, CO, USA, 15-18 Jul 2017.

Zhou, H., Fu, Y.-C. and Mirza, M. (2017) Characterization of Al2O3 and HfO2 Grown on Metal Surfaces with Thermal and Plasma Enhanced Atomic Layer Deposition. AVS 17th International Conference on Atomic Layer Deposition (ALD 2017) featuring the 4th International Atomic Layer Etching Workshop (ALE 2017), Denver, CO, USA, 15-18 Jul 2017.

Fu, Y.-C., Li, X. , Peralagu, U. , Hemakumara, D., Millar, D. A.J., Steer, M. and Thayne, I. G. (2017) Scaled HfO2/In0.53Ga0.47As MOSCAPs via Inserting TiN Caping Layer for III-V Low Power Device Application. UK Semiconductors 2017, Sheffield, UK, 12-13 July 2017.

Fu, Y.-C., Peralagu, U. , Millar, D. A.J., Lin, J., Povey, I., Li, X. , Monaghan, S., Droopad, R., Hurley, P. K. and Thayne, I. G. (2017) The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors. Applied Physics Letters, 110(14), 142905. (doi:10.1063/1.4980012)

Thayne, I., Li, X. , Millar, D., Fu, Y.-C. and Peralagu, U. (2017) Plasma Processing of III-V Materials for Energy Efficient Electronics Applications. In: Advanced Etch Technology for Nanopatterning VI, San Jose, CA, USA, 27 Feb - 01 Mar 2017, 101490R. (doi:10.1117/12.2257863)

Millar, D., Peralagu, U. , Li, X. , Fu, Y.-C., Gaspar, G., Hurley, P. and Thayne, I. (2017) Improving the electrical properties of the In0.3Ga0.7Sb-Al2O3 interface via in-situ H2 plasma and TMA exposure. 20th Conference on Insulating Films on Semiconductors (INFOS 2017), Potsdam, Germany, 27-30 Jun 2017.

2016

Li, X. , Fu, Y.-C., Millar, D.A.J., Peralagu, U. , Steer, M. and Thayne, I.G. (2016) The Impact of an HBr/Ar Atomic Layer Etch (ALE) Process for InGaAs Vertical Nanowire Diameter Reduction on the Interface Between InGaAs and In-situ ALD Deposited HfO2. 47th IEEE Semiconductor Interface Specialists Conference (SISC 2016), San Diego, CA, USA, 8-10 Dec 2016.

Millar, D., Peralagu, U. , Fu, Y.-C., Li, X. , Steer, M. and Thayne, I. (2016) Initial Investigation on the Impact of In Situ Hydrogen Plasma Exposure to the Interface Between Molecular Beam Epitaxially Grown P-Ga0.7In0.3Sb (100) and Thermal Atomic Layer Deposited (ALD) Al2O3. In: 19th Workshop on Dielectrics in Microelectronics (WoDIM), Aci Castello, Catania, Italy, 27-30 Jun 2016,

Li, X. , Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. 42nd International Conference on Micro and Nano Engineering (MNE 2016), Vienna, Austria, 19-23 Sept 2016. (Unpublished)

Li, X. , Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. In: UK Semiconductor Conference, Sheffield, UK, 6-7 July 2016, (Unpublished)

2015

Fu, Y.-C., Peralagu, U. , Ignatova, O., Li, X. , Droopad, R., Thayne, I., Lin, J., Povey, I., Monaghan, S. and Hurley, P. (2015) Energy-Band Structure of Atomic Layer Deposited Al2O3 & Sulphur Passivated Molecular Beam Epitaxially Grown (110) In0.53Ga0.47As Surfaces. In: 11th Conference on PhD Research in Microelectronics and Electronics (IEEE PRIME 2015), Glasgow, UK, 29 June - 2 July 2015,

This list was generated on Mon Mar 18 01:22:29 2019 GMT.
Number of items: 15.

Articles

Fu, Y.-C., Peralagu, U. , Millar, D. A.J., Lin, J., Povey, I., Li, X. , Monaghan, S., Droopad, R., Hurley, P. K. and Thayne, I. G. (2017) The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors. Applied Physics Letters, 110(14), 142905. (doi:10.1063/1.4980012)

Conference or Workshop Item

Zhou, H., Fu, Y.-C., Mirza, M. M.A. and Li, X. (2018) Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 and HfO2 Films Investigated by Using in situ Auger Electron Spectroscopy. AVS 18th International Conference on Atomic Layer Deposition (ALD) Featuring the 5th International Atomic Layer Etching Workshop (ALE), Incheon, Korea, 29 Jul - 01 Aug 2018.

Fu, Y.-C., Li, X. , Peralagu, U. , Millar, D., Steer, M., Zhou, H., Droopad, R. and Thayne, I.G. (2017) The Impact of In-situ Hydrogen Plasma Passivation Prior to ALD HfO2 Deposition on the Electrical Properties of ICP Etched P-type InGaAs (110) MOSCAPs. 48th IEEE Semiconductor Interface Specialists Conference (SISC 2017), San Diego, CA, USA, 6-9 Dec 2017.

Millar, D. et al. (2017) Electrical and Chemical Analysis of the In-situ H2 Plasma Cleaned InGaSb-Al2O3 Interface. 48th IEEE Semiconductor Interface Specialists Conference (SISC 2017), San Diego, CA, USA, 6 -9 Dec 2017.

Li, X. , Fu, Y.-C. and Thayne, I.G. (2017) A Process Development on Inductively Coupled Plasma Reactive Ion Etching in Cl2/BCl3 Chemistry for Fabricating GaN-based Vertical Nanowires. 43rd International Conference on Micro and Nanoengineering (MNE 2017), Braga, Portugal, 18-22 Sept 2017.

Li, X. et al. (2017) Atomic layer etch processes developed in an ICP/RIE etching system for etching III-V compound semiconductor materials. AVS 17th International Conference on Atomic Layer Deposition (ALD 2017) featuring the 4th International Atomic Layer Etching Workshop (ALE 2017), Denver, CO, USA, 15-18 Jul 2017.

Zhou, H., Fu, Y.-C. and Mirza, M. (2017) Characterization of Al2O3 and HfO2 Grown on Metal Surfaces with Thermal and Plasma Enhanced Atomic Layer Deposition. AVS 17th International Conference on Atomic Layer Deposition (ALD 2017) featuring the 4th International Atomic Layer Etching Workshop (ALE 2017), Denver, CO, USA, 15-18 Jul 2017.

Fu, Y.-C., Li, X. , Peralagu, U. , Hemakumara, D., Millar, D. A.J., Steer, M. and Thayne, I. G. (2017) Scaled HfO2/In0.53Ga0.47As MOSCAPs via Inserting TiN Caping Layer for III-V Low Power Device Application. UK Semiconductors 2017, Sheffield, UK, 12-13 July 2017.

Millar, D., Peralagu, U. , Li, X. , Fu, Y.-C., Gaspar, G., Hurley, P. and Thayne, I. (2017) Improving the electrical properties of the In0.3Ga0.7Sb-Al2O3 interface via in-situ H2 plasma and TMA exposure. 20th Conference on Insulating Films on Semiconductors (INFOS 2017), Potsdam, Germany, 27-30 Jun 2017.

Li, X. , Fu, Y.-C., Millar, D.A.J., Peralagu, U. , Steer, M. and Thayne, I.G. (2016) The Impact of an HBr/Ar Atomic Layer Etch (ALE) Process for InGaAs Vertical Nanowire Diameter Reduction on the Interface Between InGaAs and In-situ ALD Deposited HfO2. 47th IEEE Semiconductor Interface Specialists Conference (SISC 2016), San Diego, CA, USA, 8-10 Dec 2016.

Li, X. , Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. 42nd International Conference on Micro and Nano Engineering (MNE 2016), Vienna, Austria, 19-23 Sept 2016. (Unpublished)

Conference Proceedings

Thayne, I., Li, X. , Millar, D., Fu, Y.-C. and Peralagu, U. (2017) Plasma Processing of III-V Materials for Energy Efficient Electronics Applications. In: Advanced Etch Technology for Nanopatterning VI, San Jose, CA, USA, 27 Feb - 01 Mar 2017, 101490R. (doi:10.1117/12.2257863)

Millar, D., Peralagu, U. , Fu, Y.-C., Li, X. , Steer, M. and Thayne, I. (2016) Initial Investigation on the Impact of In Situ Hydrogen Plasma Exposure to the Interface Between Molecular Beam Epitaxially Grown P-Ga0.7In0.3Sb (100) and Thermal Atomic Layer Deposited (ALD) Al2O3. In: 19th Workshop on Dielectrics in Microelectronics (WoDIM), Aci Castello, Catania, Italy, 27-30 Jun 2016,

Li, X. , Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. In: UK Semiconductor Conference, Sheffield, UK, 6-7 July 2016, (Unpublished)

Fu, Y.-C., Peralagu, U. , Ignatova, O., Li, X. , Droopad, R., Thayne, I., Lin, J., Povey, I., Monaghan, S. and Hurley, P. (2015) Energy-Band Structure of Atomic Layer Deposited Al2O3 & Sulphur Passivated Molecular Beam Epitaxially Grown (110) In0.53Ga0.47As Surfaces. In: 11th Conference on PhD Research in Microelectronics and Electronics (IEEE PRIME 2015), Glasgow, UK, 29 June - 2 July 2015,

This list was generated on Mon Mar 18 01:22:29 2019 GMT.