Dr Sung-Jin Cho

  • Research Assistant (School of Engineering)

Publications

List by: Type | Date

Jump to: 2018 | 2017 | 2016 | 2015 | 2014
Number of items: 22.

2018

Cho, S.-J., Li, X. , Guiney, I., Floros, K., Hemakumara, D., Wallis, D.J., Humphreys, C. and Thayne, I.G. (2018) Impact of stress in ICP-CVD SiN x passivation films on the leakage current in AlGaN/GaN HEMTs. Electronics Letters, 54(15), pp. 947-949. (doi:10.1049/el.2018.1097)

Li, X. , Zhou, H., Hemakumara, D., Cho, S.-J., Floros, K., Moran, D. and Thayne, I. (2018) A Study of In-Situ Auger Spectroscopic Surface Analysis in Development of Atomic Layer Etch for GaN/AlGaN Based Power Device Fabrication. 10th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 11th International Conference on Plasma-Nano Technology & Science (ISPlasma2018 / IC-PLANTS2018), Nagoya, Japan, 4-8 March 2018.

Li, X. , Cho, S.-J., Floros, K., Hemakumara, D., Zhou, H., Guiney, I., Moran, D., Humphreys, C. and Thayne, I.G. (2018) In-situ Auger Spectroscopy Analysis of an Atomic Layer Etching Process for GaN/AlGaN-based Power Device Fabrication. UKNC Winter Conference 2018, Manchester, UK, 10-11 Jan 2018.

Li, X. , Zhou, H., Flores, K., Cho, S.-J., Hemakumara, D., Moran, D. and Thayne, I. (2018) Optimization of Atomic Layer Etch Process for Fabrication of Dual Barrier GaN-Based Power Device Using In-Situ Auger Spectrometric Surface Analysis. AVS 18th International Conference on Atomic Layer Deposition (ALD 2018) and the 5th International Atomic Layer Etching Workshop (ALE 2018), Incheon, South Korea, 29 Jul-1 Aug 2018.

2017

Floros, K., Li, X. , Guiney, I., Cho, S.-J., Hemakumara, D., Wallis, D. J., Wasige, E. , Moran, D. A.J., Humphreys, C. J. and Thayne, I. G. (2017) Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt and Ni based gate stacks. Physica Status Solidi A: Applications and Materials Science, 214(8), 1600835. (doi:10.1002/pssa.201600835)

Hemakumara, D., Li, X. , Floros, K., Cho, S., Guiney, I., Moran, D., Humphreys, C., O'Mahony, A., Knoops, H. and Thayne, I. G. (2017) 4x Reduction in Gan MOSCAP Flatband Voltage Hysteresis with an In-situ Deposited Sin Cap and Device Processing in a Cluster Tool. 12th International Conference on Nitride Semiconductors, Strasbourg, France, 24-28 July 2017.

Hemakumara, D., Li, X. , Cho, S., Floros, K., Guiney, I., Moran, D., Humphreys, C., O'Mahony, A., Knoops, H. and Thayne, I.G. (2017) The Impact on GaN MOS Capacitor Performance of In‐situ Processing in a Clustered ALD/ICP/RIE Tool. AVS 17th International Conference on Atomic Layer Deposition (ALD 2017) featuring the 4th International Atomic Layer Etching Workshop (ALE 2017), Denver, CO, USA, 15-18 Jul 2017.

Li, X. et al. (2017) Atomic layer etch processes developed in an ICP/RIE etching system for etching III-V compound semiconductor materials. AVS 17th International Conference on Atomic Layer Deposition (ALD 2017) featuring the 4th International Atomic Layer Etching Workshop (ALE 2017), Denver, CO, USA, 15-18 Jul 2017.

Li, X. , Floros, K., Cho, S.-J., Hemakumara, D., Moran, D. and Thayne, I. (2017) Damage to Algan/Gan Power Device Materials from Cl2 and Ar Plasma Based Atomic Layer Etching and its Elimilation via a Low Temperature Rapid Thermal Annealing. 9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 10th International Conference on Plasma-Nano Technology & Science (ISPlasma2017 / IC-PLANTS2017), Aichi, Japan, 1-5 March 2017.

2016

Cho, S.-J., Li, X. , Floros, K., Hamakumara, D., Ignatova, O., Moran, D., Humphreys, C.J. and Thayne, I. (2016) Low off-state Leakage Currents in AlGaN/GaN High Electron Mobility Transistors By Employing A Highly Stressed SiNx Surface Passivation Layer. 19th Workshop on Dielectrics in Microelectronics (WoDIM), Aci Castello, Catania, Italy, 27-30 Jun 2016.

Roberts, J.W., Chalker, P.R., Lee, K.B., Houston, P.A., Cho, S.-J., Thayne, I.G., Guiney, I., Wallis, D. and Humphreys, C.J. (2016) Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. Applied Physics Letters, 108(7), 072901. (doi:10.1063/1.4942093)

Li, X. , Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) An Hbr/Ar Atomic Layer Etch Process for Precision Gate Recess Etching of Gan-Based Transistors. UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016.

Floros, K., Li, X. , Guiney, I., Cho, S.-J., Ternent, G., Hemakumara, D., Wasige, E. , Moran, D.A.J., Humphries, C.J. and Thayne, I.G. (2016) A Dual Barrier InAlN/AlGaN/GaN HEMT on Si Substrate with Pt Based Gates. In: 9th International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016, (Unpublished)

Floros, K. et al. (2016) Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

Li, X. , Floros, K., Cho, S.-J., Guiney, I., Moran, D. and Thayne, I. G. (2016) Development of an Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation in Chlorine Gas and its Argon Plasma Removal for Precision Nanometer Scale Thin Layer Etch in GaN-Based Power Device Fabrications. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

Li, X. , Floros, K., Cho, S.-J., Guiney, I., Moran, D. and Thayne, I. G. (2016) An Atomic Layer Etch Process Based on a Cycled Procedure of Chlorination in Cl2 and Argon Plasma Removal of Chlorides for GaN Based Device Fabrication. In: 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 9th International Conference on Plasma-Nano Technology & Science (ISPlasma2016 / IC-PLANTS2016), Nagoya, Japan, 6-10 March 2016,

Li, X. , Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. 42nd International Conference on Micro and Nano Engineering (MNE 2016), Vienna, Austria, 19-23 Sept 2016. (Unpublished)

Li, X. , Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. In: UK Semiconductor Conference, Sheffield, UK, 6-7 July 2016, (Unpublished)

2015

Cho, S.J., Roberts, J., Guiney, I., Li, X. , Ternent, G., Floros, K., Humphreys, C.J., Chalker, P. and Thayne, I.G. (2015) A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor. Microelectronic Engineering, 147, pp. 277-280. (doi:10.1016/j.mee.2015.04.067)

2014

Cho, S.-J. and Kim, N.-Y. (2014) Comparative analysis of the electrical properties of a low noise oscillator embedded in a symmetrical square open-loop with loaded stub resonator. Microwave and Optical Technology Letters, 56(9), pp. 2132-2136. (doi:10.1002/mop.28506)

Cho, S.-J., Wang, C. and Kim, N.-Y. (2014) Nano-scale surface morphology optimization of the ohmic contacts and electrical properties of AlGaN/GaN high electron mobility transistors using a rapid thermal annealing dielectric protection layer. Thin Solid Films, 557, pp. 262-267. (doi:10.1016/j.tsf.2013.11.134)

Cho, S.-J., Roberts, J.W., Li, X. , Ternent, G., Floros, K., Thayne, I., Chalker, P. and Wasige, E. (2014) Effect of O2 plasma pre-treatment in Al2O3 passivation using atomic-layer-deposited on GaN based metal-oxide-semiconductor capacitor. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014, p. 184.

This list was generated on Tue Dec 11 09:27:02 2018 GMT.
Number of items: 22.

Articles

Cho, S.-J., Li, X. , Guiney, I., Floros, K., Hemakumara, D., Wallis, D.J., Humphreys, C. and Thayne, I.G. (2018) Impact of stress in ICP-CVD SiN x passivation films on the leakage current in AlGaN/GaN HEMTs. Electronics Letters, 54(15), pp. 947-949. (doi:10.1049/el.2018.1097)

Floros, K., Li, X. , Guiney, I., Cho, S.-J., Hemakumara, D., Wallis, D. J., Wasige, E. , Moran, D. A.J., Humphreys, C. J. and Thayne, I. G. (2017) Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt and Ni based gate stacks. Physica Status Solidi A: Applications and Materials Science, 214(8), 1600835. (doi:10.1002/pssa.201600835)

Roberts, J.W., Chalker, P.R., Lee, K.B., Houston, P.A., Cho, S.-J., Thayne, I.G., Guiney, I., Wallis, D. and Humphreys, C.J. (2016) Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. Applied Physics Letters, 108(7), 072901. (doi:10.1063/1.4942093)

Cho, S.J., Roberts, J., Guiney, I., Li, X. , Ternent, G., Floros, K., Humphreys, C.J., Chalker, P. and Thayne, I.G. (2015) A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor. Microelectronic Engineering, 147, pp. 277-280. (doi:10.1016/j.mee.2015.04.067)

Cho, S.-J. and Kim, N.-Y. (2014) Comparative analysis of the electrical properties of a low noise oscillator embedded in a symmetrical square open-loop with loaded stub resonator. Microwave and Optical Technology Letters, 56(9), pp. 2132-2136. (doi:10.1002/mop.28506)

Cho, S.-J., Wang, C. and Kim, N.-Y. (2014) Nano-scale surface morphology optimization of the ohmic contacts and electrical properties of AlGaN/GaN high electron mobility transistors using a rapid thermal annealing dielectric protection layer. Thin Solid Films, 557, pp. 262-267. (doi:10.1016/j.tsf.2013.11.134)

Conference or Workshop Item

Li, X. , Zhou, H., Hemakumara, D., Cho, S.-J., Floros, K., Moran, D. and Thayne, I. (2018) A Study of In-Situ Auger Spectroscopic Surface Analysis in Development of Atomic Layer Etch for GaN/AlGaN Based Power Device Fabrication. 10th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 11th International Conference on Plasma-Nano Technology & Science (ISPlasma2018 / IC-PLANTS2018), Nagoya, Japan, 4-8 March 2018.

Li, X. , Cho, S.-J., Floros, K., Hemakumara, D., Zhou, H., Guiney, I., Moran, D., Humphreys, C. and Thayne, I.G. (2018) In-situ Auger Spectroscopy Analysis of an Atomic Layer Etching Process for GaN/AlGaN-based Power Device Fabrication. UKNC Winter Conference 2018, Manchester, UK, 10-11 Jan 2018.

Li, X. , Zhou, H., Flores, K., Cho, S.-J., Hemakumara, D., Moran, D. and Thayne, I. (2018) Optimization of Atomic Layer Etch Process for Fabrication of Dual Barrier GaN-Based Power Device Using In-Situ Auger Spectrometric Surface Analysis. AVS 18th International Conference on Atomic Layer Deposition (ALD 2018) and the 5th International Atomic Layer Etching Workshop (ALE 2018), Incheon, South Korea, 29 Jul-1 Aug 2018.

Hemakumara, D., Li, X. , Floros, K., Cho, S., Guiney, I., Moran, D., Humphreys, C., O'Mahony, A., Knoops, H. and Thayne, I. G. (2017) 4x Reduction in Gan MOSCAP Flatband Voltage Hysteresis with an In-situ Deposited Sin Cap and Device Processing in a Cluster Tool. 12th International Conference on Nitride Semiconductors, Strasbourg, France, 24-28 July 2017.

Hemakumara, D., Li, X. , Cho, S., Floros, K., Guiney, I., Moran, D., Humphreys, C., O'Mahony, A., Knoops, H. and Thayne, I.G. (2017) The Impact on GaN MOS Capacitor Performance of In‐situ Processing in a Clustered ALD/ICP/RIE Tool. AVS 17th International Conference on Atomic Layer Deposition (ALD 2017) featuring the 4th International Atomic Layer Etching Workshop (ALE 2017), Denver, CO, USA, 15-18 Jul 2017.

Li, X. et al. (2017) Atomic layer etch processes developed in an ICP/RIE etching system for etching III-V compound semiconductor materials. AVS 17th International Conference on Atomic Layer Deposition (ALD 2017) featuring the 4th International Atomic Layer Etching Workshop (ALE 2017), Denver, CO, USA, 15-18 Jul 2017.

Li, X. , Floros, K., Cho, S.-J., Hemakumara, D., Moran, D. and Thayne, I. (2017) Damage to Algan/Gan Power Device Materials from Cl2 and Ar Plasma Based Atomic Layer Etching and its Elimilation via a Low Temperature Rapid Thermal Annealing. 9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 10th International Conference on Plasma-Nano Technology & Science (ISPlasma2017 / IC-PLANTS2017), Aichi, Japan, 1-5 March 2017.

Cho, S.-J., Li, X. , Floros, K., Hamakumara, D., Ignatova, O., Moran, D., Humphreys, C.J. and Thayne, I. (2016) Low off-state Leakage Currents in AlGaN/GaN High Electron Mobility Transistors By Employing A Highly Stressed SiNx Surface Passivation Layer. 19th Workshop on Dielectrics in Microelectronics (WoDIM), Aci Castello, Catania, Italy, 27-30 Jun 2016.

Li, X. , Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) An Hbr/Ar Atomic Layer Etch Process for Precision Gate Recess Etching of Gan-Based Transistors. UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016.

Li, X. , Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. 42nd International Conference on Micro and Nano Engineering (MNE 2016), Vienna, Austria, 19-23 Sept 2016. (Unpublished)

Conference Proceedings

Floros, K., Li, X. , Guiney, I., Cho, S.-J., Ternent, G., Hemakumara, D., Wasige, E. , Moran, D.A.J., Humphries, C.J. and Thayne, I.G. (2016) A Dual Barrier InAlN/AlGaN/GaN HEMT on Si Substrate with Pt Based Gates. In: 9th International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016, (Unpublished)

Floros, K. et al. (2016) Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

Li, X. , Floros, K., Cho, S.-J., Guiney, I., Moran, D. and Thayne, I. G. (2016) Development of an Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation in Chlorine Gas and its Argon Plasma Removal for Precision Nanometer Scale Thin Layer Etch in GaN-Based Power Device Fabrications. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

Li, X. , Floros, K., Cho, S.-J., Guiney, I., Moran, D. and Thayne, I. G. (2016) An Atomic Layer Etch Process Based on a Cycled Procedure of Chlorination in Cl2 and Argon Plasma Removal of Chlorides for GaN Based Device Fabrication. In: 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 9th International Conference on Plasma-Nano Technology & Science (ISPlasma2016 / IC-PLANTS2016), Nagoya, Japan, 6-10 March 2016,

Li, X. , Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. In: UK Semiconductor Conference, Sheffield, UK, 6-7 July 2016, (Unpublished)

Cho, S.-J., Roberts, J.W., Li, X. , Ternent, G., Floros, K., Thayne, I., Chalker, P. and Wasige, E. (2014) Effect of O2 plasma pre-treatment in Al2O3 passivation using atomic-layer-deposited on GaN based metal-oxide-semiconductor capacitor. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014, p. 184.

This list was generated on Tue Dec 11 09:27:02 2018 GMT.