Dr Salim Berrada

  • Research Associate (Electronic and Nanoscale Engineering)

Publications

List by: Type | Date

Jump to: 2018 | 2017
Number of items: 6.

2018

Liang, J., Lee, J., Berrada, S., Georgiev, V. , Pandey, R. R., Chen, R., Asenov, A. and Todri-Sanial, A. (2018) Atomistic to circuit-level modeling of doped SWCNT for on-chip interconnects. IEEE Transactions on Nanotechnology, (doi:10.1109/TNANO.2018.2802320) (Early Online Publication)

2017

Lee, J. et al. (2017) The Impact of Vacancy Defects on CNT Interconnects: From Statistical Atomistic Study to Circuit Simulations. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, pp. 157-160. (doi:10.23919/SISPAD.2017.8085288)

Berrada, S., Lee, J., Georgiev, V. and Asenov, A. (2017) Effect of the Quantum Mechanical Tunneling on the Leakage Current in Ultra-scaled Si Nanowire Transistors. 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017. (Accepted for Publication)

Liang, J., Lee, J., Berrada, S., Georgiev, V. , Asenov, A., Azemard-Crestani, A. and Todri-Sanial, A. (2017) Atomistic to Circuit Level Modeling of Defective Doped SWCNTs with Contacts for On-Chip Interconnect Application. In: 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017, (Accepted for Publication)

Adamu-Lema, F., Duan, M. , Berrada, S., Lee, J., Al-Ameri, T. , Georgiev, V. and Asenov, A. (2017) Modelling and simulation of advanced semiconductor devices. ECS Transactions, 80(4), pp. 33-42. (doi:10.1149/08004.0033ecst)

Liang, J. et al. (2017) A Physics-based Investigation of Pt-salt Doped Carbon Nanotubes for Local Interconnects. In: 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 02-06 Dec 2017, 35.5.1-35.5.4. ISBN 9781538635599 (doi:10.1109/IEDM.2017.8268502)

This list was generated on Sun Apr 22 17:37:23 2018 BST.
Number of items: 6.

Articles

Liang, J., Lee, J., Berrada, S., Georgiev, V. , Pandey, R. R., Chen, R., Asenov, A. and Todri-Sanial, A. (2018) Atomistic to circuit-level modeling of doped SWCNT for on-chip interconnects. IEEE Transactions on Nanotechnology, (doi:10.1109/TNANO.2018.2802320) (Early Online Publication)

Adamu-Lema, F., Duan, M. , Berrada, S., Lee, J., Al-Ameri, T. , Georgiev, V. and Asenov, A. (2017) Modelling and simulation of advanced semiconductor devices. ECS Transactions, 80(4), pp. 33-42. (doi:10.1149/08004.0033ecst)

Conference or Workshop Item

Berrada, S., Lee, J., Georgiev, V. and Asenov, A. (2017) Effect of the Quantum Mechanical Tunneling on the Leakage Current in Ultra-scaled Si Nanowire Transistors. 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017. (Accepted for Publication)

Conference Proceedings

Lee, J. et al. (2017) The Impact of Vacancy Defects on CNT Interconnects: From Statistical Atomistic Study to Circuit Simulations. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, pp. 157-160. (doi:10.23919/SISPAD.2017.8085288)

Liang, J., Lee, J., Berrada, S., Georgiev, V. , Asenov, A., Azemard-Crestani, A. and Todri-Sanial, A. (2017) Atomistic to Circuit Level Modeling of Defective Doped SWCNTs with Contacts for On-Chip Interconnect Application. In: 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017, (Accepted for Publication)

Liang, J. et al. (2017) A Physics-based Investigation of Pt-salt Doped Carbon Nanotubes for Local Interconnects. In: 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 02-06 Dec 2017, 35.5.1-35.5.4. ISBN 9781538635599 (doi:10.1109/IEDM.2017.8268502)

This list was generated on Sun Apr 22 17:37:23 2018 BST.