Dr Olesya Ignatova

  • Research Associate (Electronic & Nanoscale Engineering)

Publications

Selected publications

Fu, Y.-C., Peralagu, U. , Li, X. , Ignatova, O. , Millar, D. A. J., Steer, M., Droopad, R. and Thayne, I. (2015) First Demonstration of Cluster Tool Based ICP Etching of (100) and (110) InGaAs MOSCAPs Followed by In-Situ ALD Deposition of HfO2 Including Nitrogen and Hydrogen Plasma Passivation for Non-Planar III-V MOSFETs. In: 46th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 02-05 Dec 2015,

Taylor, R.J.E., Li, G., Ivanov, P., Childs, D.T.D. , Stevens, B.J., Harrison, B., Babazadeh, N., Ignatova, O. and Hogg, R.A. (2016) Mode Control in Photonic Crystal Surface Emitting Lasers Through In-Plane Feedback. In: 2016 International Semiconductor Laser Conference (ISLC), Kobe, Japan, 12-15 Sep 2016, ISBN 9784885523069

Thayne, I. , Li, X. , Jansen, W., Ignatova, O. , Bentley, S., Zhou, H., Macintyre, D., Thoms, S. and Hill, R. (2009) Development of III-V MOSFET process modules compatible with silicon ULSI manufacture. ECS Transactions, 25(7), pp. 385-395. (doi:10.1149/1.3203975)

Ignatova, O. et al. (2013) Towards vertical sidewalls in III-V FinFETs: dry etch processing and its associated damage on the electrical and physical properties of (100)-oriented InGaAs. In: 44th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 5-7 Dec 2013, pp. 167-168.

Li, X. , Ignatova, O. , Cao, M., Peralagu, U. , Steer, M., Mirza, M. , Zhou, H. and Thayne, I. (2013) 10 nm vertical In0.53Ga0.47As line etching process for III-V MOSFET fabrication by using inductively coupled plasma (ICP) etcher in Cl2/CH4/H2 chemistry. In: 26th International Microprocesses and Nanotechnology Conference (MNC), Royton Sapporo, Hokkaido, Japan, 5-8 Nov 2013,

Taylor, R.J.E., Li, G. , Ivanov, P., Childs, D.D. , Stevens, B.J., Babazadeh, N., Ignatova, O. , Nakano, Y., Tanemura, T. and Hogg, R.A. (2016) Photonic Crystal Surface Emitting Lasers — Coherent Arrays and External Feedback. In: 2016 International Conference Laser Optics, St. Petersburg, Russia, 27 Jun - 01 Jul 2016, R3. ISBN 9781467397384 (doi:10.1109/LO.2016.7549733)

Fu, Y.-C., Peralagu, U. , Ignatova, O. , Li, X. , Droopad, R., Thayne, I. , Lin, J., Povey, I., Monaghan, S. and Hurley, P. (2015) Energy-Band Structure of Atomic Layer Deposited Al2O3 & Sulphur Passivated Molecular Beam Epitaxially Grown (110) In0.53Ga0.47As Surfaces. In: 11th Conference on PhD Research in Microelectronics and Electronics (IEEE PRIME 2015), Glasgow, UK, 29 June - 2 July 2015,

All publications

List by: Type | Date

Jump to: 2016 | 2015 | 2014 | 2013 | 2009
Number of items: 14.

2016

Taylor, R.J.E., Li, G., Ivanov, P., Childs, D.T.D. , Stevens, B.J., Harrison, B., Babazadeh, N., Ignatova, O. and Hogg, R.A. (2016) Mode Control in Photonic Crystal Surface Emitting Lasers Through In-Plane Feedback. In: 2016 International Semiconductor Laser Conference (ISLC), Kobe, Japan, 12-15 Sep 2016, ISBN 9784885523069

Cho, S.-J., Li, X. , Floros, K., Hamakumara, D., Ignatova, O. , Moran, D. , Humphreys, C.J. and Thayne, I. (2016) Low off-state Leakage Currents in AlGaN/GaN High Electron Mobility Transistors By Employing A Highly Stressed SiNx Surface Passivation Layer. 19th Workshop on Dielectrics in Microelectronics (WoDIM), Aci Castello, Catania, Italy, 27-30 Jun 2016.

Floros, K. et al. (2016) Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

Taylor, R.J.E., Li, G. , Ivanov, P., Childs, D.D. , Stevens, B.J., Babazadeh, N., Ignatova, O. , Nakano, Y., Tanemura, T. and Hogg, R.A. (2016) Photonic Crystal Surface Emitting Lasers — Coherent Arrays and External Feedback. In: 2016 International Conference Laser Optics, St. Petersburg, Russia, 27 Jun - 01 Jul 2016, R3. ISBN 9781467397384 (doi:10.1109/LO.2016.7549733)

2015

Fu, Y.-C., Peralagu, U. , Li, X. , Ignatova, O. , Millar, D. A. J., Steer, M., Droopad, R. and Thayne, I. (2015) First Demonstration of Cluster Tool Based ICP Etching of (100) and (110) InGaAs MOSCAPs Followed by In-Situ ALD Deposition of HfO2 Including Nitrogen and Hydrogen Plasma Passivation for Non-Planar III-V MOSFETs. In: 46th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 02-05 Dec 2015,

Peralagu, U. et al. (2015) (Invited) towards a vertical and damage free post-etch InGaAs fin profile: dry etch processing, sidewall damage assessment and mitigation options. ECS Transactions, 69(5), pp. 15-36. (doi:10.1149/06905.0015ecst)

Fu, Y.-C., Peralagu, U. , Ignatova, O. , Li, X. , Droopad, R., Thayne, I. , Lin, J., Povey, I., Monaghan, S. and Hurley, P. (2015) Energy-Band Structure of Atomic Layer Deposited Al2O3 & Sulphur Passivated Molecular Beam Epitaxially Grown (110) In0.53Ga0.47As Surfaces. In: 11th Conference on PhD Research in Microelectronics and Electronics (IEEE PRIME 2015), Glasgow, UK, 29 June - 2 July 2015,

Fu, Y.-C., Peralagu, U. , Ignatova, O. , Li, X. , Lin, J., Povey, I., Monaghan, S., Droopad, R., Hurley, P. and Thayne, I. (2015) Energy-band parameter of atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces. In: 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Glasgow, UK, 29 Jun - 02 Jul 2015, pp. 346-348. (doi:10.1109/PRIME.2015.7251406)

2014

Peralagu, U. , Li, X. , Ignatova, O. , Steer, M., Povey, I., Hurley, P. and Thayne, I. (2014) Demonstration of III-V fins with vertical sidewalls using Cl2/CH4/H2/O2 dry etch chemistry in conjunction with digital etching for recovery of etch damage. In: 45th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, 10 - 13 Dec 2014,

Fu, Y.-C., Peralagu, U. , Lin, J., Povey, I., Li, X. , Ignatova, O. , Monaghan, S., Droopad, R., Hurley, P. and Thayne, I. (2014) The impact of forming gas annealing on the properties of interfaces between atomic layer deposited Al2O3 and sulphur passivated molecular beam epitaxially grown (110) p- and n-type In0.53Ga0.47As surfaces. In: 18th Workshop on Dielectrics in Microelectronics (WoDIM), Kinsale, Co Cork, Ireland, 9-11 Jun 2014,

2013

Li, X. , Ignatova, O. , Cao, M., Peralagu, U. , Steer, M., Mirza, M. , Zhou, H. and Thayne, I. (2013) 10 nm vertical In0.53Ga0.47As line etching process for III-V MOSFET fabrication by using inductively coupled plasma (ICP) etcher in Cl2/CH4/H2 chemistry. In: 26th International Microprocesses and Nanotechnology Conference (MNC), Royton Sapporo, Hokkaido, Japan, 5-8 Nov 2013,

Ignatova, O. et al. (2013) Towards vertical sidewalls in III-V FinFETs: dry etch processing and its associated damage on the electrical and physical properties of (100)-oriented InGaAs. In: 44th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 5-7 Dec 2013, pp. 167-168.

Peralagu, U. , Ignatova, O. , Li, X. , Steer, M., Povey, I.M., Hurley, P.K. and Thayne, I.G. (2013) Optimisation of sidewalls in III-V FinFETs. In: UK Semiconductors 2013, Sheffield, UK, 3 - 4 Jul 2013,

2009

Thayne, I. , Li, X. , Jansen, W., Ignatova, O. , Bentley, S., Zhou, H., Macintyre, D., Thoms, S. and Hill, R. (2009) Development of III-V MOSFET process modules compatible with silicon ULSI manufacture. ECS Transactions, 25(7), pp. 385-395. (doi:10.1149/1.3203975)

This list was generated on Thu Nov 14 04:33:20 2019 GMT.
Number of items: 14.

Articles

Peralagu, U. et al. (2015) (Invited) towards a vertical and damage free post-etch InGaAs fin profile: dry etch processing, sidewall damage assessment and mitigation options. ECS Transactions, 69(5), pp. 15-36. (doi:10.1149/06905.0015ecst)

Thayne, I. , Li, X. , Jansen, W., Ignatova, O. , Bentley, S., Zhou, H., Macintyre, D., Thoms, S. and Hill, R. (2009) Development of III-V MOSFET process modules compatible with silicon ULSI manufacture. ECS Transactions, 25(7), pp. 385-395. (doi:10.1149/1.3203975)

Conference or Workshop Item

Cho, S.-J., Li, X. , Floros, K., Hamakumara, D., Ignatova, O. , Moran, D. , Humphreys, C.J. and Thayne, I. (2016) Low off-state Leakage Currents in AlGaN/GaN High Electron Mobility Transistors By Employing A Highly Stressed SiNx Surface Passivation Layer. 19th Workshop on Dielectrics in Microelectronics (WoDIM), Aci Castello, Catania, Italy, 27-30 Jun 2016.

Conference Proceedings

Taylor, R.J.E., Li, G., Ivanov, P., Childs, D.T.D. , Stevens, B.J., Harrison, B., Babazadeh, N., Ignatova, O. and Hogg, R.A. (2016) Mode Control in Photonic Crystal Surface Emitting Lasers Through In-Plane Feedback. In: 2016 International Semiconductor Laser Conference (ISLC), Kobe, Japan, 12-15 Sep 2016, ISBN 9784885523069

Floros, K. et al. (2016) Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

Taylor, R.J.E., Li, G. , Ivanov, P., Childs, D.D. , Stevens, B.J., Babazadeh, N., Ignatova, O. , Nakano, Y., Tanemura, T. and Hogg, R.A. (2016) Photonic Crystal Surface Emitting Lasers — Coherent Arrays and External Feedback. In: 2016 International Conference Laser Optics, St. Petersburg, Russia, 27 Jun - 01 Jul 2016, R3. ISBN 9781467397384 (doi:10.1109/LO.2016.7549733)

Fu, Y.-C., Peralagu, U. , Li, X. , Ignatova, O. , Millar, D. A. J., Steer, M., Droopad, R. and Thayne, I. (2015) First Demonstration of Cluster Tool Based ICP Etching of (100) and (110) InGaAs MOSCAPs Followed by In-Situ ALD Deposition of HfO2 Including Nitrogen and Hydrogen Plasma Passivation for Non-Planar III-V MOSFETs. In: 46th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 02-05 Dec 2015,

Fu, Y.-C., Peralagu, U. , Ignatova, O. , Li, X. , Droopad, R., Thayne, I. , Lin, J., Povey, I., Monaghan, S. and Hurley, P. (2015) Energy-Band Structure of Atomic Layer Deposited Al2O3 & Sulphur Passivated Molecular Beam Epitaxially Grown (110) In0.53Ga0.47As Surfaces. In: 11th Conference on PhD Research in Microelectronics and Electronics (IEEE PRIME 2015), Glasgow, UK, 29 June - 2 July 2015,

Fu, Y.-C., Peralagu, U. , Ignatova, O. , Li, X. , Lin, J., Povey, I., Monaghan, S., Droopad, R., Hurley, P. and Thayne, I. (2015) Energy-band parameter of atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces. In: 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Glasgow, UK, 29 Jun - 02 Jul 2015, pp. 346-348. (doi:10.1109/PRIME.2015.7251406)

Peralagu, U. , Li, X. , Ignatova, O. , Steer, M., Povey, I., Hurley, P. and Thayne, I. (2014) Demonstration of III-V fins with vertical sidewalls using Cl2/CH4/H2/O2 dry etch chemistry in conjunction with digital etching for recovery of etch damage. In: 45th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, 10 - 13 Dec 2014,

Fu, Y.-C., Peralagu, U. , Lin, J., Povey, I., Li, X. , Ignatova, O. , Monaghan, S., Droopad, R., Hurley, P. and Thayne, I. (2014) The impact of forming gas annealing on the properties of interfaces between atomic layer deposited Al2O3 and sulphur passivated molecular beam epitaxially grown (110) p- and n-type In0.53Ga0.47As surfaces. In: 18th Workshop on Dielectrics in Microelectronics (WoDIM), Kinsale, Co Cork, Ireland, 9-11 Jun 2014,

Li, X. , Ignatova, O. , Cao, M., Peralagu, U. , Steer, M., Mirza, M. , Zhou, H. and Thayne, I. (2013) 10 nm vertical In0.53Ga0.47As line etching process for III-V MOSFET fabrication by using inductively coupled plasma (ICP) etcher in Cl2/CH4/H2 chemistry. In: 26th International Microprocesses and Nanotechnology Conference (MNC), Royton Sapporo, Hokkaido, Japan, 5-8 Nov 2013,

Ignatova, O. et al. (2013) Towards vertical sidewalls in III-V FinFETs: dry etch processing and its associated damage on the electrical and physical properties of (100)-oriented InGaAs. In: 44th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 5-7 Dec 2013, pp. 167-168.

Peralagu, U. , Ignatova, O. , Li, X. , Steer, M., Povey, I.M., Hurley, P.K. and Thayne, I.G. (2013) Optimisation of sidewalls in III-V FinFETs. In: UK Semiconductors 2013, Sheffield, UK, 3 - 4 Jul 2013,

This list was generated on Thu Nov 14 04:33:20 2019 GMT.