Dr Meng Duan

  • Research Associate (Electronic and Nanoscale Engineering)

Publications

List by: Type | Date

Jump to: 2017 | 2016 | 2015 | 2014 | 2013
Number of items: 8.

2017

Duan, M. et al. (2017) Interaction Between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction. In: 2017 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2-6 Apr 2017, XT5.1-XT5.7. (doi:10.1109/IRPS.2017.7936419)

Duan, M. , Zhang, J. F., Ji, Z., Zhang, W. D., Kaczer, B. and Asenov, A. (2017) Key issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs. IEEE Transactions on Electron Devices, 64(6), pp. 2478-2484. (doi:10.1109/TED.2017.2691008)

Adamu-Lema, F., Duan, M. , Navarro, C., Georgiev, V. , Cheng, B., Wang, X., Millar, C., Gamiz, F. and Asenov, A. (2017) Simulation Based DC and Dynamic Behaviour Characterization of Z2FET. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, (In Press)

Duan, M. , Adamu-Lema, F., Cheng, B., Navarro, C., Wang, X., Georgiev, V. , Gamiz, F., Millar, C. and Asenov, A. (2017) 2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, (In Press)

2016

Duan, M. , Zhang, J. F., Ji, Z., Zhang, W. D., Vigar, D., Asenov, A., Gerrer, L., Chandra, V., Aitken, R. and Kaczer, B. (2016) Insight into electron traps and their energy distribution under positive bias temperature stress and hot carrier aging. IEEE Transactions on Electron Devices, 63(9), pp. 3642-3648. (doi:10.1109/TED.2016.2590946)

2015

Duan, M. et al. (2015) Hot Carrier Aging and its Variation Under Use-Bias: Kinetics, Prediction, Impact on Vdd and SRAM. In: 2015 IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA, 7-9 Dec 2015, 20.4.1-20.4.4. ISBN 9781467398947 (doi:10.1109/IEDM.2015.7409742)

2014

Duan, M. , Zhang, J. F., Ji, Z., Zhang, W. D., Kaczer, B., Schram, T., Ritzenthaler, R., Groeseneken, G. and Asenov, A. (2014) Development of a technique for characterizing bias temperature instability-induced device-to-device variation at SRAM-relevant conditions. IEEE Transactions on Electron Devices, 61(9), pp. 3081-3089. (doi:10.1109/TED.2014.2335053)

2013

Duan, M. , Zhang, J., Ji, Z., Zhang, W.D., Kaczer, B., Schram, T., Ritzenthaler, R., Groeseneken, G. and Asenov, A. (2013) New analysis method for time-dependent device-to-device variation accounting for within-device fluctuation. IEEE Transactions on Electron Devices, 60(8), pp. 2505-2511. (doi:10.1109/TED.2013.2270893)

This list was generated on Tue Oct 17 15:17:48 2017 BST.
Number of items: 8.

Articles

Duan, M. , Zhang, J. F., Ji, Z., Zhang, W. D., Kaczer, B. and Asenov, A. (2017) Key issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs. IEEE Transactions on Electron Devices, 64(6), pp. 2478-2484. (doi:10.1109/TED.2017.2691008)

Duan, M. , Zhang, J. F., Ji, Z., Zhang, W. D., Vigar, D., Asenov, A., Gerrer, L., Chandra, V., Aitken, R. and Kaczer, B. (2016) Insight into electron traps and their energy distribution under positive bias temperature stress and hot carrier aging. IEEE Transactions on Electron Devices, 63(9), pp. 3642-3648. (doi:10.1109/TED.2016.2590946)

Duan, M. , Zhang, J. F., Ji, Z., Zhang, W. D., Kaczer, B., Schram, T., Ritzenthaler, R., Groeseneken, G. and Asenov, A. (2014) Development of a technique for characterizing bias temperature instability-induced device-to-device variation at SRAM-relevant conditions. IEEE Transactions on Electron Devices, 61(9), pp. 3081-3089. (doi:10.1109/TED.2014.2335053)

Duan, M. , Zhang, J., Ji, Z., Zhang, W.D., Kaczer, B., Schram, T., Ritzenthaler, R., Groeseneken, G. and Asenov, A. (2013) New analysis method for time-dependent device-to-device variation accounting for within-device fluctuation. IEEE Transactions on Electron Devices, 60(8), pp. 2505-2511. (doi:10.1109/TED.2013.2270893)

Conference Proceedings

Duan, M. et al. (2017) Interaction Between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction. In: 2017 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2-6 Apr 2017, XT5.1-XT5.7. (doi:10.1109/IRPS.2017.7936419)

Adamu-Lema, F., Duan, M. , Navarro, C., Georgiev, V. , Cheng, B., Wang, X., Millar, C., Gamiz, F. and Asenov, A. (2017) Simulation Based DC and Dynamic Behaviour Characterization of Z2FET. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, (In Press)

Duan, M. , Adamu-Lema, F., Cheng, B., Navarro, C., Wang, X., Georgiev, V. , Gamiz, F., Millar, C. and Asenov, A. (2017) 2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, (In Press)

Duan, M. et al. (2015) Hot Carrier Aging and its Variation Under Use-Bias: Kinetics, Prediction, Impact on Vdd and SRAM. In: 2015 IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA, 7-9 Dec 2015, 20.4.1-20.4.4. ISBN 9781467398947 (doi:10.1109/IEDM.2015.7409742)

This list was generated on Tue Oct 17 15:17:48 2017 BST.