Dr Khaled Elgaid

  • Senior Lecturer (Electronic and Nanoscale Engineering)

telephone: 01413306678
email: Khaled.Elgaid@glasgow.ac.uk

Research interests

Research interests

Biography 

Khaled Elgaid (B.Sc., Evansville USA, M.Sc., Cincinnati USA, and Ph.D., Glasgow UK) holds a Senior Lectureship in High-Speed Integrated Systems at the University of Glasgow.  He is Leader of the Microwave Millimeter-wave Characterisation Centre for High Speed Electronics Systems and leads the Integrated Microwave and Millimeter-wave Circuits & Systems group in the School of Engineering. His research has led to numerous industry partnerships and commercialisation of Monolithic Microwave Integrated Circuit (MMIC) Technologies for communications and sensors applications.

 

Research Interests

My research interests span the design and realization of compound semiconductor microwave and millimetre-wave integrated circuits using state of the art in-house nanotechnology facilities. These activities utilise different compound semiconductor high-speed electronic devices; including devices fabricated using GaN and GaAs. The group enhances its research activities with further integration including on chip antennas and Microelectromechanical systems (MEMS) at sub millimeter-wave and terahertz frequencies. My research activities are funded by several government and industrial grants and deliver research in high-speed wireless communications, radar, sensors and systems applications. I have published over 130 papers in my research field area and invited speaker at several international conferences.

 

Expertise

Monolithic Microwave Integrated Circuits (MMICs) technologies, Integrate Antennas, MEMS and RF design fabrication and evaluation. Compound semiconductor nanofabrication technology development. 


Selected publications

Eblabla, A. M., Li, X., Wallis, D. J., Guiney, I. and Elgaid, K. (2017) GaN on low resistivity silicon THz high -Q passive device technology. IEEE Transactions on Terahertz Science and Technology, 7(1), pp. 93-97. (doi:10.1109/TTHZ.2016.2618751)

Eblabla, A., Wallis, D.J., Guiney, I. and Elgaid, K. (2015) Novel shielded coplanar waveguides on GaN-on-low resistivity Si substrates for MMIC applications. IEEE Microwave and Wireless Components Letters, 25(7), pp. 427-429. (doi:10.1109/LMWC.2015.2429120)

Eblabla, A., Benakaprasad, B., Li, X., Wallis, D.J., Guiney, J. and Elgaid, K. (2017) Low-loss MMICs viable transmission media for GaN-on-low resistivity silicon technology. IEEE Microwave and Wireless Components Letters, 27(1), pp. 10-12. (doi:10.1109/LMWC.2016.2629964)

Eblabla, A., Li, X., Thayne, I., Wallis, D. J., Guiney, I. and Elgaid, K. (2015) High performance GaN high electron mobility transistors on low resistivity silicon for X-Band applications. IEEE Electron Device Letters, 36(9), pp. 899-901. (doi:10.1109/LED.2015.2460120)

McGregor, I., Aghamoradi, F. and Elgaid, K. (2010) An approximate analytical model for the quasi-static parameters of elevated CPW lines. IEEE Transactions on Microwave Theory and Techniques, 58(12), pp. 3809-3814. (doi:10.1109/TMTT.2010.2086552)

Hwang, C.J., Lok, L.B., Thayne, I.G. and Elgaid, K. (2010) W-band microstrip band-pass filter using branch-line coupler with open stubs. Microwave and Optical Technology Letters, 52(6), pp. 1436-1439. (doi:10.1002/mop.25185)

Hwang, C.J., Chong, H.M.H., Holland, M., Thayne, I.G. and Elgaid, K. (2009) DC-35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications. Electronics Letters, 45(12), pp. 632-633. (doi:10.1049/el.2009.0684)

Hwang, C.-J., Lok, L.B., Chong, H.M.H., Holland, M., Thayne, I.G. and Elgaid, K. (2010) An ultra-low-power MMIC amplifier using 50nm delta In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMT. IEEE Electron Device Letters, 31(11), pp. 1230-1232. (doi:10.1109/LED.2010.2070484)


Grants

Awarded Scientific Proposals Since January 2006 (PI)

  • Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates. Funded Value: £770,790; Funded Period: Aug 2016 - Jul 2019; Funder: EPSRC. http://gtr.rcuk.ac.uk/projects?ref=EP%2FN014820%2F1
  • Ka-Band GaN Devices and Circuits.
  • EPSRC Funding “High Resolution Passive Imaging Operating at 200GHz.
  • Electro-Magnetic Remote Sensing (EMRS) Defence Technology Centre (DTC) Funding, ”UK source for mm-wave imager MMIC technology”, industrial partner QinetiQ.
  • Electro-Magnetic Remote Sensing (EMRS) Defence Technology Centre (DTC) Funding, “High Speed Sampling Downconverters for Radar and EW Applications”, Industrial Partner BAE.
  • Agilent Technologies Funding - University Research Grant Scheme “W-Band Ultra Wideband Medium Power Amplifiers for Instrumentation Applications”.
  • EPSERC Funding, Case Award for New Academic “PhD scholarship” joint project with QinetiQ.
  • QimetiQ Funding Award for New Academic “Partial PhD scholarship”.
  • Agilent Technologies Funding - University Equipment Donations Scheme“.
  • W-Band LNA (MMIC) With CPW to Microstrip Transition, XANIC Limited.
  • CPW-Microstrip Transition, SMART Award/XANIC Limited.

 

Previous Scientific Proposals (Partial Contribution)

  • Speckled Computing and Wireless Communications
  • Sub 100nm III-V MOSFETs for Digital Applications
  • SiGe for MOS Technologies, Development and Applications
  • Millimeter-Wave Signal Processing for Data Communications and Radar Applications
  • Nanoelectronics Technologies for Ultrafast Devices and Systems on III-V 

Supervision

    • Michael Farage
    • Matthew Smith
    • Bhavana Benakaprasad
    • Abdalla Eblabla
    • Chi Jeon Hwang
    • Oberdan Donadio
    • Adel Emhemmed
    • Fatemeh Aghamoradi
    • Ibrahim Aref
    • Nuredin Ahmed
    • Ian McGregor
    • Laibun Lok

Teaching

  • Microwave and Millimetre-Wave Circuit Design
  • Team Design Project 3
  • VLSI Design 4
  • Digital Signal Processing 4
  • BSc Project Supervision
  • BEng Project Supervision
  • MSc Project Supervision

All publications

List by: Type | Date

Jump to: 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2009 | 2008 | 2007 | 2006 | 2005 | 2004 | 2003 | 2002 | 2001 | 2000 | 1999
Number of items: 119.

2017

Eblabla, A., Benakaprasad, B., Li, X., Wallis, D. J., Guiney, I., Humphreys, C. and Elgaid, K. (2017) Passive Components Technology for THz-Monolithic Integrated Circuits (THz-MIC). In: 18th International Radar Symposium (IRS), Prague, Czech Republic, 28-30 June 2017, pp. 1-7. ISBN 9783736993433 (doi:10.23919/IRS.2017.8008166)

Eblabla, A., Benakaprasad, B., Li, X., Wallis, D.J., Guiney, J. and Elgaid, K. (2017) Low-loss MMICs viable transmission media for GaN-on-low resistivity silicon technology. IEEE Microwave and Wireless Components Letters, 27(1), pp. 10-12. (doi:10.1109/LMWC.2016.2629964)

Eblabla, A. M., Li, X., Wallis, D. J., Guiney, I. and Elgaid, K. (2017) GaN on low resistivity silicon THz high -Q passive device technology. IEEE Transactions on Terahertz Science and Technology, 7(1), pp. 93-97. (doi:10.1109/TTHZ.2016.2618751)

Benakaprasad, B., Eblabla, A., Li, X., Thayne, I., Wallis, D.J., Guiney, I., Humphreys, C. and Elgaid, K. (2017) Terahertz Microstrip Elevated Stack Antenna Technology on GaN-on-Low Resistivity Silicon Substrates for TMIC. In: 46th European Microwave Conference, London, 3-7 Oct 2016, (doi:10.1109/EuMC.2016.7824367)

2016

Elgaid, K., Houston, P. and Tasker, P. (2016) EPSRC Projects in Microwave, Millimetre-Wave and THz Research, Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates. European Microwave Conference, London, 3-7 Oct 2016. (Unpublished)

Benakaprasad, B., Eblabla, A., Li, X., Wallis, D.J., Guiney, I. and Elgaid, K. (2016) Design and Performance Comparison of Various Terahertz Microstrip Antennas on GaN-On-Low Resistivity Silicon Substrates for TMIC. In: 2016 Asia-Pacific Microwave Conference (APMC), New Delhi, India, 5-9 Dec 2016, ISBN 9781509015924 (doi:10.1109/APMC.2016.7931368)

Benakaprasad, B., Eblabla, A., Li, X., Thayne, I., Wallis, D.J., Guiney, I., Humphreys, C. and Elgaid, K. (2016) Terahertz Microstrip Single Patch Antenna Technology on GaN-on-Low Resistivity Silicon Substrates for TMIC. In: IET Colloquium on Antennas, Wireless and Electromagnetics, Glasgow, UK, 26 May 2016, (Unpublished)

Benakaprasad, B., Eblabla, A., Li, X., Thayne, I., Wallis, D., Guiney, I., Humphreys, C. and Elgaid, K. (2016) Terahertz Monolithic Integrated Circuits (TMICs) Array Antenna Technology On GaN-on-Low Resistivity Silicon Substrates. In: 41st International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2016), Copenhagen, Denmark, 25-30 Sept 2016, (doi:10.1109/IRMMW-THz.2016.7758488)

Eblabla, A., Benakaprasad, B., Li, X., Wallis, D.J., Guiney, I. and Elgaid, K. (2016) High Frequency Active and Passives Devices using GaN on Low Resistivity Silicon. In: ARMMS RF & Microwave Society Conference, Milton Common Nr Thame, UK, 18-19 Apr 2016, (Unpublished)

Eblabla, A., Li, X., Thayne, I., Wallis, D.J., Guiney, I. and Elgaid, K. (2016) MMIC-Compatible Microstrip Technology for GaN-HEMTs on Low Resistivity Silicon Substrate. In: International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016, (Unpublished)

Eblabla, A., Li, X., Wallis, D. J., Guiney, I. and Elgaid, K. (2016) GaN-based HEMTs on Low Resistivity Silicon Technology for Microwave Applications. In: 8th Wide Bandgap Semiconductor and Components Workshop, Harwell. UK, 12-13 Sept 2016,

2015

Eblabla, A., Li, X., Thayne, I., Wallis, D. J., Guiney, I. and Elgaid, K. (2015) High performance GaN high electron mobility transistors on low resistivity silicon for X-Band applications. IEEE Electron Device Letters, 36(9), pp. 899-901. (doi:10.1109/LED.2015.2460120)

Eblabla, A., Wallis, D.J., Guiney, I. and Elgaid, K. (2015) Novel shielded coplanar waveguides on GaN-on-low resistivity Si substrates for MMIC applications. IEEE Microwave and Wireless Components Letters, 25(7), pp. 427-429. (doi:10.1109/LMWC.2015.2429120)

Eblabla, A., Li, X., Thayne, I., Wallis, D. J., Guiney, I. and Elgaid, K. (2015) Effect Of AlN Spacer In The Layer Structure On High Rf Performance GaN-Based HEMTs On Low Resistivity Silicon At K-Band Application. In: 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 Aug - 4 Sept 2015, (Unpublished)

2014

Benakaprasad, B., Sharabi, S. and Elgaid, K. (2014) RF and microwave oscillator design using p-HEMT transistor. International Journal of Scientific and Research Publications, 4(8),

2013

Aref, I. and Elgaid, K. (2013) System level modeling of a digital communication channel based on SystemC. International Journal of Future Computer and Communication, 2(3), pp. 210-214. (doi:10.7763/IJFCC.2013.V2.154)

Ahmed, N. A. S., Emhemmed, A. and Elgaid, K. (2013) Dual-Radios Hypermesh Network Based on CSMA Protocol. In: 2013 International Conference on Information Networking (ICOIN), Bangkok, Thailand, 28-30 Jan 2013, pp. 198-203. ISBN 9781467357401 (doi:10.1109/ICOIN.2013.6496376)

2012

Ahmed, N. A. S. and Elgaid, K. (2012) Single and Multi-Channel Networks: Performance Comparison at System Level. In: 2012 8th International Symposium on Communication Systems, Networks & Digital Signal Processing (CSNDSP), Poznan, Poland, 18-20 July 2012, pp. 1-6. (doi:10.1109/CSNDSP.2012.6292766)

Emhemmed, A. S., Ahmed, N. A. and Elgaid, K. (2012) EC-CPW Fed Elevated Patch Antenna. In: 24th International Conference on Microelectronics (ICM), Algiers, Algeria, 16-20 Dec 2012, pp. 1-4. ISBN 9781467352895 (doi:10.1109/ICM.2012.6471374)

2011

Aghamoradi, F., McGregor, I., Roy, S. and Elgaid, K. (2011) Low-loss grounded elevated coplanar waveguide for sub-millimeter wave MMIC applications. Progress In Electromagnetics Research B, 34, pp. 103-123. (doi:10.2528/PIERB11072111)

Donadio, O., Elgaid, K. and Appleby, R. (2011) Waveguide-to-microstrip transition at G-band using elevated E-plane probe. Electronics Letters, 47(2), pp. 115-116. (doi:10.1049/el.2010.2926)

2010

McGregor, I., Aghamoradi, F. and Elgaid, K. (2010) An approximate analytical model for the quasi-static parameters of elevated CPW lines. IEEE Transactions on Microwave Theory and Techniques, 58(12), pp. 3809-3814. (doi:10.1109/TMTT.2010.2086552)

Hwang, C.J., Lok, L.B., Thayne, I.G. and Elgaid, K. (2010) W-band microstrip band-pass filter using branch-line coupler with open stubs. Microwave and Optical Technology Letters, 52(6), pp. 1436-1439. (doi:10.1002/mop.25185)

Ahmed, N., Aref, I., Rodriguez-Salazar, F. and Elgaid, K. (2010) Network performance evaluation based on SoC design methodology. In: IEEE, IET International Symposium on Communication Systems, Networks and Digital Signal Processing CSNDSP 2010, Newcastle, UK, 21-23 Jul 2010, pp. 256-261.

Aref, I., Ahmed, N., Rodriguez-Salazar, F. and Elgaid, K. (2010) Measuring and optimising convergence and stability in terms of system construction in SystemC. In: 17th IEEE International Conference and Workshops on Engineering of Computer Based Systems (ECBS), 2010, Oxford, UK, 22-26 Mar 2010, pp. 263-267. ISBN 9781424465378 (doi:10.1109/ECBS.2010.36)

Aref, I., Ahmed, N., Rodriguez-Salazar, F. and Elgaid, K. (2010) Modeling of flocking behaviour system in SystemC. In: Sixth Advanced International Conference on Telecommunications (AICT), 2010, Barcelona, Spain, 9-15 May 2010, pp. 358-363. ISBN 9781424467488 (doi:10.1109/AICT.2010.29)

Aref, I., Ahmed, N., Rodriguez-Salazar, F. and Elgaid, K. (2010) Wireless extension into existing SystemC design methodology. In: 2nd International Conference on Computer Engineering and Technology (ICCET), 2010, Chengdu , China, 16-19 Apr 2010, pp. 374-379. ISBN 9781424463473 (doi:10.1109/ICCET.2010.5485893)

Emhemmed, A.S., McGregor, I. and Elgaid, K. (2010) Elevated conductor coplanar waveguide-fed three-level proximity-coupled antenna for G-band applications. IET Microwaves, Antennas and Propagation, 4(11), pp. 1910-1915. (doi:10.1049/iet-map.2009.0616)

Hwang, C.-J., Lok, L.B., Chong, H.M.H., Holland, M., Thayne, I.G. and Elgaid, K. (2010) An ultra-low-power MMIC amplifier using 50nm delta In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMT. IEEE Electron Device Letters, 31(11), pp. 1230-1232. (doi:10.1109/LED.2010.2070484)

McGregor, I. and Elgaid, K. (2010) Low-power GaAs comparator and monostable. Electronics Letters, 46(17), 1214-1U70. (doi:10.1049/el.2010.1357)

2009

Aghamoradi, F., McGregor, I. and Elgaid, K. (2009) Performance enhancement of millimetre-wave resonators using elevated CPW. Electronics Letters, 45(25), pp. 1326-1328. (doi:10.1049/el.2009.2348)

Hwang, C.J., Lok, L.B., Thayne, I.G. and Elgaid, K. (2009) Parallel coupled-line bandpass filter with branch-line shape for G-band frequency. Electronics Letters, 45(16), pp. 838-839. (doi:10.1049/el.2009.0716)

Ahmed, N.A., Aref, I.A., Rodriguez-Salazar, F. and Elgaid, K. (2009) Wireless channel model based on SoC design methodology. In: Fourth International Conference on Systems and Networks Communications ICSNC'09, Porto, Portugal, 20-25 Sep 2009, pp. 72-75. ISBN 9780769537757 (doi:10.1109/ICSNC.2009.81)

Emhemmed, A. and Elgaid, K. (2009) G-band bowtie dipole antenna. In: European Conference on Antennas and Propagation EuCAP 2009 Proceedings: Estrel Convention Center, Berlin, Germany, March 23-27, 2009. VDE Verlag: Berlin, Germany, pp. 949-951. ISBN 9781424447534

Emhemmed, A.S. and Elgaid, K. (2009) Broadband Micromachined Microstrip Patch Antenna for G-band Applications. In: European Microwave Conference, Manchester, UK, 2009, pp. 374-377. ISBN 978-1-4244-4748-0

Emhemmed, A.S., Elgaid, K. and Lok, L.B. (2009) Integrated Micromachined Millimeter Wave Patch Antenna. In: Antenna Technology, 2009. iWAT 2009. IEEE International Workshop on, Santa Monica, CA., 2-4 March, 2009, pp. 1-4. ISBN 9781424443956 (doi:10.1109/IWAT.2009.4906903)

Emhemmed, A.S., McGregor, I. and Elgaid, K. (2009) 200GHz Broadband Proximity Coupled Patch Antenna. In: 2009 IEEE International Conference on Ultra-Wideband, Vancouver, Canada, 9-11 September 2009, pp. 404-407. (doi:10.1109/ICUWB.2009.5288756)

Hwang, C.-J., Chong, H.M.H., Holland, M., Thayne, I.G. and Elgaid, K. (2009) Erratum for ‘DC–35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications’. Electronics Letters, 45(14), p. 764. (doi:10.1049/el.2009.1741)

Hwang, C.J., Chong, H.M.H., Holland, M., Thayne, I.G. and Elgaid, K. (2009) DC-35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications. Electronics Letters, 45(12), pp. 632-633. (doi:10.1049/el.2009.0684)

Hwang, C.J., Lok, L.B., Thayne, I.G. and Elgaid, K. (2009) A wide bandpass filter with defected ground structure for wide out-of-band suppression. In: APMC: 2009 Asia Pacific Microwave Conference, 7-10 December 2009, Singapore. IEEE: Piscataway, N.J., USA, pp. 2018-2021. ISBN 9781424428014 (doi:10.1109/APMC.2009.5385299)

Hwang, C.J., McGregor, I., Oxland, R., Whyte, G., Thayne, I.G. and Elgaid, K. (2009) An ultra-low power OOK RF transceiver for wireless sensor networks. In: EuMC 09: European Microwave Conference, Rome, Italy, 29 Sept - 1 Oct 2009. IEEE Computer Society: Burlingame, USA, pp. 1323-1326. ISBN 9781424447480

Lok, L.B., Hwang, C.J., Chong, H.M.H., Thayne, I.G. and Elgaid, K. (2009) A W-band MMIC vector modulator utilizing tandem couplers and 50nm MHEMTs. In: European Microwave Conference, Rome, Italy, 29 Sept - 1 Oct 2009, pp. 1251-1254.

Lok, L.B., Singh, S., Wilson, A. and Elgaid, K. (2009) Impact of waveguide aperture dimensions and misalignment on the calibrated performance of a network analyzer from 140 to 325GHz. In: 73rd ARFTG Microwave Measurement Conference Spring 2009 Practical Applications of Nonlinear Measurements: 12 June 2009, Boston, MA. IEEE Computer Society: Piscataway, N.J., USA, pp. 32-35. ISBN 9781424434428 (doi:10.1109/ARFTG.2009.5278062)

McGregor, I., Lok, L.B., Hwang, C.J., Oxland, R., Whyte, G., Thayne, I.G. and Elgaid, K. (2009) Low complexity, low power, 10 GHz super-regenerative transceiver. In: APMC: 2009 Asia Pacific Microwave Conference, Singapore, 7-10 December 2009, pp. 587-590.

McGregor, I., Whyte, G. and Elgaid, K. (2009) Low complexity, 165 mu W, 5 Mbit/s wideband radio front-end with range of several meters. In: IEEE MTT-S International Microwave Symposium Digest: 7-12 June 2009, Boston, MA, USA. IEEE Computer Society: Piscataway, N.J., USA, pp. 397-400. ISBN 9781424428038 (doi:10.1109/MWSYM.2009.5165717)

2008

Aref, I.A., Ahmed, N.A., Rodriguez-Salazar, F. and Elgaid, K. (2008) RTL-level modeling of an 8B/10B encoder-decoder using SystemC. In: 2008 5th IFIP International Conference on Wireless and Optical Communications Networks (WOCN '08). IEEE Computer Society. ISBN 9781424419791 (doi:10.1109/WOCN.2008.4542493)

Lok, L., Hwang, C.J., Chong, H.M.H., Elgaid, K. and Thayne, I.G. (2008) Measurement and modeling of CPW transmission lines and power dividers on electrically thick GaAs substrate to 220GHz. In: 33rd International Conference on Infrared, Millimeter and Terahertz Waves: 15-19 September 2008, Pasadena, CA, USA. IEEE Computer Society: Piscataway, N.J., USA, pp. 734-735. ISBN 9781424421190 (doi:10.1109/ICIMW.2008.4665794)

2007

Thayne, I., Elgaid, K., Moran, D., Cao, X., Boyd, E., McLelland, H., Holland, M., Thoms, S. and Stanley, C. (2007) 50 nm metamorphic GaAs and InPHEMTs. Thin Solid Films, 515, pp. 4373-4377. (doi:10.1016/j.tsf.2006.07.104)

2006

Moran, D.A.J., McLelland, H., Elgaid, K., Whyte, G., Stanley, C.R. and Thayne, I. (2006) 50-nm self-aligned and 'standard' T-gate InP pHEMT comparison: the influence of parasitics on performance at the 50-nm node. IEEE Transactions on Electron Devices, 53(12), pp. 2920-2925. (doi:10.1109/TED.2006.885674)

Elgaid, K., Holland, M., McLelland, H., Moran, D., Thoms, S., Stanley, C. and Thayne, I. (2006) 50nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications. In: Indium Phosphide & Related Materials, Princeton, USA, Paper TuB2.

Elgaid, K., Thayne, I., Whyte, G., Martens, J. and Culver, D. (2006) Parasitic moding influences on coplanar waveguide passive components at G-band frequency. In: European Microwave Conference, Manchester, UK,

McGregor, I., Whyte, G., Elgaid, K., Wasige, E. and Thayne, I. (2006) A 400 micro W Tx/380 microW Rx 2.4GHz super-regenerative GaAs transceiver. In: European Microwave Conference, Manchester, UK, pp. 1523-1525.

Moran, D., McLelland, H., Elgaid, K., Stanley, C. and Thayne, I. (2006) Scaling of self-aligned T-gate InGaAs/InAlAs HEMT technology. In: UK III-V Compound Semiconductors 2006, Sheffield, UK,

Thayne, I., Elgaid, K., Holland, M., McLelland, H., Moran, D.A.J., Thoms, S. and Stanley, C. (2006) 50 nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications. In: 2006 International Conference on Indium Phosphide and Related Materials, Princeton, New Jersey, USA, 7-11 May 2006, pp. 181-184. ISBN 0780395581 (doi:10.1109/ICIPRM.2006.1634143)

Thayne, I.G. et al. (2006) III-V MOSFETs for Digital Applications: An Overview. In: UK III-V Compound Semiconductors 2006, Sheffield, UK,

Zhou, H., Elgaid, K., Wilkinson, C. and Thayne, I. (2006) Low-hydrogen-content silicon nitride deposited at room temperature by inductively coupled plasma deposition. Japanese Journal of Applied Physics, 45(Pt.1), pp. 8388-8392. (doi:10.1143/JJAP.45.8388)

2005

Elgaid, K., McLelland, H., Holland, M., Moran, D.A.J., Stanley, C.R. and Thayne, I.G. (2005) 50-nm T-gate metamorphic GaAs HEMTs with fT of 440 GHz and noise figure of 0.7 dB at 26 GHz. IEEE Electron Device Letters, 26(11), pp. 784-786. (doi:10.1109/LED.2005.857716)

Elgaid, K., McLelland, H., Holland, M., Moran, D., Stanley, C. and Thayne, I. (2005) 50-nm T-gate metamorphic GaAs HEMTs with f(T) of 440 GHz and noise figure of 0.7 dB at 26 GHz. IEEE Electron Device Letters, 26, pp. 784-786. (doi:10.1109/LED.2005.857716)

Elgaid, K., McLelland, H., Stanley, C. and Thayne, I. (2005) Low noise W-band MMMIC amplifier using 50nm InP technology for millimeterwave receivers applications. In: 2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALSConference proceedings - indium phosphide and related materials, NEW YORK, pp. 523-525. ISBN 1092-8669

Elgaid, K., Moran, D., McLelland, H., Holland, M. and Thayne, I. (2005) Low noise high performance 50nm T-GATE metamorphic HEMT with cut-off frequency FTOF 440Ghz for millimeterwave imaging receivers applications. In: 2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALSConference proceedings - indium phosphide and related materials, NEW YORK, pp. 141-143. ISBN 1092-8669

Elgaid, K., Zhou, H., Wilkinson, C. and Thayne, I. (2005) Room temperature deposited Si3N4 characterization and applications in MMICs. In: 8th International symposium on Silicon Nitride and Silicon dioxide thin insulating films and emerging dielectrics, Quebec, Canada,

Elgaid, K., McLelland, H., Stanley, C.R. and Thayne, I.G. (2005) Low noise W-band MMMIC amplifier using 50 nm InP technology for millimeterwave receivers applications. In: International Conference on Indium Phosphide and Related Materials, Piscataway, 8-12 May 2005, pp. 523-525. ISBN 0780388917 (doi:10.1109/ICIPRM.2005.1517548)

Elgaid, K., Moran, D., McLelland, H., Holland, M. and Thayne, I.G. (2005) Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency fT of 440 GHz for millimeterwave imaging receivers applications. In: IEEE International Conference on Indium Phosphide and Related Materials, 2005, Glasgow, Scotland, 8-12 May 2005, pp. 141-143. ISBN 0780388917 (doi:10.1109/ICIPRM.2005.1517439)

Hettak, K., Stubbs, M., Elgaid, K. and Thayne, I. (2005) Design and characterisation of elevated coplanar waveguide and thin film microstrip structures for mm-wave applications. In: European Microwave Conference, Paris, France,

Hettak, K., Stubbs, M., Elgaid, K. and Thayne, I. (2005) A compact high performance semi-lumped low pass filter fabricated with a standard airbridge process. In: European Microwave Conference, Paris, France,

Kalna, K., Elgaid, K., Thayne, I. and Asenov, A. (2005) Modelling of InPHEMTs with high indium content channels. In: 2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALSConference proceedings - indium phosphide and related materials, NEW YORK, pp. 192-195. ISBN 1092-8669

Li, X., Elgaid, K., McLelland, H. and Thayne, I.G. (2005) Surface mass spctrometric analysis of SiCl4/SiF4/O-2 dry etch gate recessed 120 nm T-gate GaAs pHEMTs. Microelectronic Engineering, 78-79, pp. 233-238. (doi:10.1016/j.mee.2004.12.032)

Moran, D., Cao, X., Elgaid, K., Boyd, E., Chen, Y., Thoms, S., McLelland, H., Stanley, C., Holland, M. and Thayne, I. (2005) Sub 100nm III-V HEMT technology: Approaching the Terahertz Regime. In: International Workshop on Terahertz Technology, Osaka, Japan,

Thayne, I., Elgaid, K., Moran, D., Cao, X., Boyd, E., McLelland, H., Holland, M., Thoms, S. and Stanley, C. (2005) 50nm Metamorphic GaAs and InP HEMTs. In: 3rd International Conference for Advanced Materials and Technologies, Singapore,

2004

Cao, X., Thoms, S., Macintyre, D., McLelland, H., Boyd, E., Elgaid, K., Hill, R., Stanley, C.R. and Thayne, I.G. (2004) Fabrication and performance of 50 nm T-gates for InP high electron mobility transistors. Microelectronic Engineering, 73-74, pp. 818-821. (doi:10.1016/j.mee.2004.03.058)

Elgaid, K., Zhou, H., Wilkinson, C.D.W. and Thayne, I.G. (2004) Low temperature high density Si3N4 MIM capacitor technology for MMMIC and RF-MEMs applications. Microelectronic Engineering, 73-4, pp. 452-455. (doi:10.1016/j.mee.2004.03.016)

Boyd, E., Thoms, S., Moran, D., Elgaid, K., Cao, X., Holland, M., Stanley, C. and Thayne, I. (2004) Fabrication of very high performance 50nm T-gate metamorphic GaAs HEMT's with exceptional uniformity. In: European Gallium Arsenide and other Compound Semiconductors Application Symposium,GaAs 2004, Amsterdam, The Netherlands,

Cao, X., Elgaid, K., McLelland, H., Stanley, C. and Thayne, I. (2004) High performance 50nm T-gate In0.52Al0.48As/In0.7Ga0.3As psuedomorphic high electron mobility transistors. In: 16th International Conference on Indium phosphide and Related Materials, Kagoshima, Japan,

Elgaid, K., McLelland, H., Cao, X., Boyd, E., Moran, D., Thoms, S., Zhou, H., Wilkinson, C., Stanley, C. and Thayne, I. (2004) An array-based design methodology for the realisation of 94GHz MMMIC amplifiers. In: European Gallium Arsenide and other Compound Semiconductors Application Symposium,GaAs 2004, Amsterdam, The Netherlands,

Elgaid, K., McLelland, H., Cao, X. and Thayne, I. (2004) Integration of a novel, high quality Si3N4 metal insulator metal (MIM) capacitors deposited by (ICP-CVD) at room temperature with 50nm T-gate metamorphic HEMTS to realise monolithic millimetre-wave integrated circuits (MMMICs). In: 16th International Conference on Indium phosphide and Related Materials, Kagoshima, Japan,

Elgaid, K., Zhou, H., Wilkinson, C. and Thayne, I. (2004) Low temperature high density highly uniform Si3N4 technology for passive and active devices in MMMIC applications. In: GaAs Mantech 2004, Tampa, USA,

Johnson, N., Khokhar, A., Elgaid, K., Thayne, I., Drysdale, T. and Cumming, D. (2004) Tools for metamaterials applications from GHz to optical frequencies. In: First Workshop of the Metamorphose, Lille-Louvain-la-Neuve, Belgium, France,

Li, X., Elgaid, K., McLelland, H. and Thayne, I. (2004) Surface mass spectrometric analysis of SiCl4/SiF4/O2 dry-etch gate recessed 120nm T-gate HEMTs. In: Microelectronic and Nanoelectronic Engineering 2004, Rotterdam, The Netherlands,

Moran, D.A.J., Boyd, E., Elgaid, K., McEwan, F., McLelland, H., Stanley, C.R. and Thayne, I.G. (2004) Self-aligned T-gate InP HEMT realisation through double delta doping and a non-annealed ohmic process. Microelectronic Engineering, 73-74, pp. 814-817. (doi:10.1016/j.mee.2004.03.057)

Moran, D., Boyd, E., Elgaid, K., McEwan, F., McLelland, H., Stanley, C. and Thayne, I. (2004) Self-aligned T-gate InPHEMT realisation through double delta doping and a non-annealed ohmic process. Microelectronic Engineering, 73-4, pp. 814-817. (doi:10.1016/j.mee.2004.03.057)

Moran, D., Boyd, E., Elgaid, K., McLelland, H., Stanley, C. and Thayne, I. (2004) 50nm T-gate lattice-matched InP HEMTs with fT of 430GHz using non-annealed ohmic contact process. In: European Gallium Arsenide and other Compound Semiconductors Application Symposium,GaAs 2004, Amsterdam, The Netherlands,

Thayne, I., Cao, X., Moran, D.A.J., Boyd, E., Elgaid, K., McLelland, H., Holland, M., Thoms, S. and Stanley, C. (2004) Very high performance 50 nm T-gate III-V HEMTs enabled by robust nanofabrication technologies. In: 4th IEEE Conference on Nanotechnology 2004, Munich, Germany, 16-19 August 2004, pp. 95-97. ISBN 0780385365 (doi:10.1109/NANO.2004.1392261)

Thoms, S., Macintyre, D., Elgaid, K., Stanley, C. and Thayne, I. (2004) The use of imprint lithography to fabricate high electron mobility transistors. In: International Conference on Electron, Photon, Ion beams and Nanofabrication, San Diego, USA,

Yang, L., Asenov, A., Watling, J., Borici, M., Barker, J., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2004) Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs. Microelectronics Reliability, 44, pp. 1101-1107. (doi:10.1016/j.microrel.2004.04.003)

2003

Moran, D., Boyd, E., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D.S., Thoms, S., Stanley, C.R. and Thayne, I.G. (2003) Novel technologies for the realisation of GaAs pHEMTs with 120 nm self-aligned and nanoimprinted T-gates. Microelectronic Engineering, 67-89, pp. 769-774. (doi:10.1016/S0167-9317(03)00137-0)

Boyd, E., Moran, D., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D., Thorns, S., Stanley, C. and Thayne, L. (2003) 120 nm gate length E-beam and nanoimprint T-gate GaAs pHEMTs utilising non-annealed ohmic contacts. In: Compound Semiconductors 2002: Proceedings of the 29th International Symposium, Lausanne, 7-11 October 2002. Series: Institute of Physics conference series (174). Institute of Physics, pp. 291-294. ISBN 0750309423

Cao, X., Thoms, S., Macintyre, D., McLelland, H., Boyd, E., Elgaid, K., Hill, R., Stanley, C. and Thayne, I. (2003) Fabrication and performance of 50nm T-gate for high electron mobility transistors. In: Microelectronic and Nanoelectronic Engineering 2003, Cambridge, UK,

Elgaid, K., McCloy, D. and Thayne, I. (2003) Micromachined SU8 negative resist for MMIC applications on low resistivity CMOS substrates. Microelectronic Engineering, 67-8, pp. 417-421. (doi:10.1016/S0167-9317(03)00188-6)

Elgaid, K. and Thayne, I. (2003) Passvie and active devices using Si and SiGe for MMIC applications. In: 3rd ESA Workshop on mm-wave Technology, Helsinki, Finland,

Elgaid, K., Zhou, H., Wilkinson, C. and Thayne, I. (2003) Low temperature high density Si3N4 MIM capacitors technology for MMIC and RF-MEMs applications. In: Microelectronic and Nanoelectronic Engineering, Cambridge, UK,

Li, X., Elgaid, K., McLelland, H. and Thayne, I. G. (2003) A Novel Single Step Sol-Gel Process for Silica on Silicon PLC's. In: 14th International Conference on Integrated Optics and Optical Fibre Communication, Rimini, Italy, 22-24 Sept 2003,

Macintyre, D.S., Chen, Y., Gourlay, D., Boyd, E., Moran, D., Cao, X., Elgaid, K., Stanley, C.R., Thayne, I. and Thoms, S. (2003) Nanoimprint lithography process optimization for the fabrication of high electron mobility transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21(6), pp. 2783-2787. (doi:10.1116/1.1629719)

Moran, D., Kalna, K., Elgaid, K., McEwan, F., McLelland, H., Zhuang, L., Thayne, I., Stanley, C. and Asenov, A. (2003) Self-aligned 0.12micron T-gate InGaAs/InAlAs HEMT technology utilizing a non-annealed contact strategy. In: ESSDERC 2003 - European Solid-State Device Research Conference, Estoril, Portugal, pp. 315-318.

Thayne, I. et al. (2003) Advanced III-V HEMT MMIC Technologies for Millemeter-Wave Applications. In: European Microwave Week 2003, Munich, Germany, 6-10 Oct 2003,

Yang, L., Asenov, A., Watling, J., Borici, M., Barker, J., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2003) Optimisation of sub 11nm Si/SiGe MODFETs for high linearity applications. In: 14th Workshop on Modeling and Simulation of Electron Devices, Barcelona, Spain, pp. 41-44.

Yang, L., Asenov, A., Watling, J., Borici, M., Barker, J., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2003) Optimisation of sub 11nm Si/SiGe MODFETs for high linearity applications. In: IEEE Conference on Electron devices and solid state circuits, Hong Kong, pp. 331-344.

Yang, L., Asenov, A., Borici, M., Watling, J. R., Barker, J. R., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2003) Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications. In: IEEE Conference on Electron Devices and Solid-State Circuits, Kowloon, Hong Kong, 16-18 December 2003, pp. 331-334. ISBN 0780377494 (doi:10.1109/EDSSC.2003.1283543)

2002

Boyd, E., Moran, D., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D., Thoms, S., Stanley, C. and Thayne, I. (2002) 120nm gate length e-beam and nanoimprint T-gate GaAs pHEMTs itilising non-annealed ohmic contacts. In: International Symposium on Compound Semiconductors, Lausanne, Switzerland,

Boyd, E., Moran, D., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D., Thoms, S., Stanley, C. R. and Thayne, I. G. (2002) 120nm Gate Length E-Beam and Nanoimprint T-Gate GaAs pHEMTs Utilizing Non-Annealed Ohmic Contacts. In: Compound Semiconductors 2002, Lausanne, Switzerland, 7-10 Oct 2002, ISBN 9780750309424

Burns, G., Chong, H., Edgar, D., Ross, A., Elgaid, K., McLelland, H., Ferguson, S., McEwan, F. and Thayne, I. (2002) Millimetre-wave high frequency photonic crystal antennas. In: IEEE 2002 High Frequency Postgraduate Student Colloquium, London, UK,

Edgar, D. et al. (2002) Millimeter-wave performance of In/AlAs/InGaAs HEMT's using a UVIII/PMMA bilayer for 70nm T-gate fabrication. In: European Microwave Conference, Milan, Italy,

Edgar, D. L. et al. (2002) Millimetre-wave Performance of InAlAs/InGaAs HEMTs Using a UVIII/PMMA Bilayer for 70nm T-Gate Fabrication. In: European Microwave Week 2002, Milan, Italy, 23-27 Sept 2002,

Elgaid, K., McCloy, D., Edgar, D. and Thayne, I. (2002) Coplanar waveguide and spiral inductors for MMIC applications on low resistivity CMOS grade silicon using micromachined SU8 negative resist. In: European Microwave Conference, Milan, Italy,

Elgaid, K., McCloy, D., Ferguson, S. and Thayne, I. (2002) Coplanar waveguide and spiral inductors for MMIC applications on low resistivity CMOS grade silicon using micromachined SU8 negative resist. In: Asia Pacific Conference, Kyoto, Japan,

Elgaid, K., McCloy, D. and Thayne, I. (2002) Micromachined SU8 negative resist for MMIC applications on low resistivity CMOS substrate. In: Microelectronic and Nanoelectronic Engineering 2002, Lugano, Switzerland,

Kalna, K., Roy, S., Asenov, A., Elgaid, K. and Thayne, I. (2002) Scaling of pseudomorphic high electron mobility transistors to decanano dimensions. Solid-State Electronics, 46, pp. 631-638.

Moran, D., Boyd, E., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D., Thoms, S., Stanley, C. and Thayne, I. (2002) Novel technologies for the realisation of GaAs pHEMTs wtih 20nm self-aligned and nanoimprinted T-gates. In: Micro- and NanoEngineering 2002, Lugano, Switzerland, ISBN 0167-9317

2001

Li, X., Elgaid, K., McLelland, H. and Thayne, I.G. (2001) Effects of pressure and capping layer thickness on sub-micron T-gate recess etching of GaAs p-HEMTs by SiCl4/SiF4/O2 reactive ion etch. Microelectronic Engineering, 57-58, pp. 633-640. (doi:10.1016/S0167-9317(01)00495-6)

Chongcheawchamnan, M., Nam, S., Robertson, I., Elgaid, K. and Thayne, I. (2001) Ultrawideband characterisation of CPW GaAs monolithic 60 GHz couplers using overlaid structures. In: Asia pacific microwave conference, Taipei,

Kalna, K., Asenov, A., Elgaid, K. and Thayne, I. (2001) Scaling of pHEMTs to decanano dimensions. VLSI Design, 13, pp. 435-439.

Thayne, I. G., Elgaid, K. and Ternent, G. (2001) Devices and fabrication technology. In: Robertson, I. D. and Lucyszyn, S. (eds.) RFIC and MMIC Design and Technology. Series: IEE circuits, devices and systems series (13). IEE Press: London, UK, pp. 31-81. ISBN 9780852967867 (doi:Devices and fabrication technology)

Yip, J., Collier, R., Jastrebski, A., Edgar, D., Elgaid, K., Thayne, I. and Li, D. (2001) Substrate-modes in doubled-layered coplanar waveguide. In: European Microwave Conference, London,

Young, P.R., McPherson, D.S., Chrisostomidis, C., Elgaid, K., Thayne, I.G., Lucyszyn, S. and Robertson, I.D. (2001) Accurate non-uniform transmission line model and its application to the de-embedding of on-wafer measurements. IEE Proceedings: Microwaves Antennas and Propagation, 148(3), pp. 153-156. (doi:10.1049/ip-map:20010402)

2000

Kalna, K., Asenov, A., Elgaid, K. and Thayne, I. (2000) Effect of impact ionization in scaled pHEMTs. In: 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications., Glasgow, UK, 13-14 November 2000, pp. 236-241. ISBN 078036550X

Kalna, K., Asenov, A., Elgaid, K. and Thayne, I. (2000) Performance of aggressively scaled pseudomorphic HEMTs: a monte carlo simulation study. In: Third International EuroConference on Advanced Semiconductor Devices and Microsystems., Smolenice Castle, Slovakia, 16-18 October 2000, pp. 55-58. ISBN 0780359399

Kalna, K., Roy, S., Asenov, A., Elgaid, K. and Thayne, I. (2000) RF analysis of aggressively scaled pHEMTs. In: 30th European Solid-State Device Research Conference., Cork, Ireland, 11-13 September 2000, pp. 156-159. ISBN 2863322486

Li, X., Elgaid, K., McLelland, H. and Thayne, I.G. (2000) Effects of Pressure and Capping Layer Thickness on Sub-Micron T-Gate Recess Etching of GaAs pHEMTs by SiCl4/SiF4/O2 Reactive Ion Etch. In: 26th International Conference on Micro- and Nano-Engineering, Jena, Germany, 18-21 Sept 2000,

1999

Elgaid, K., Li, X., Williamson, F., McLelland, H., Ferguson, S.M., Holland, M.C., Beaumont, S.P. and Thayne, I.G. (1999) Optimisation of DC and RF performance of GaAs HEMT-based Schottky diodes. Electronics Letters, 35(19), pp. 1678-1679. (doi:10.1049/el:19991104)

Ternent, G., Ferguson, S., Borsosfoldi, Z., Elgaid, K., Lohdi, T., Edgar, D., Wilkinson, C.D.W. and Thayne, I.G. (1999) Coplanar waveguide transmission lines and high Q inductors on CMOS grade silicon using photoresist and polyimide. Electronics Letters, 35(22), pp. 1957-1958. (doi:10.1049/el:19991298)

This list was generated on Tue Nov 21 18:20:37 2017 GMT.
Number of items: 119.

Articles

Eblabla, A., Benakaprasad, B., Li, X., Wallis, D.J., Guiney, J. and Elgaid, K. (2017) Low-loss MMICs viable transmission media for GaN-on-low resistivity silicon technology. IEEE Microwave and Wireless Components Letters, 27(1), pp. 10-12. (doi:10.1109/LMWC.2016.2629964)

Eblabla, A. M., Li, X., Wallis, D. J., Guiney, I. and Elgaid, K. (2017) GaN on low resistivity silicon THz high -Q passive device technology. IEEE Transactions on Terahertz Science and Technology, 7(1), pp. 93-97. (doi:10.1109/TTHZ.2016.2618751)

Eblabla, A., Li, X., Thayne, I., Wallis, D. J., Guiney, I. and Elgaid, K. (2015) High performance GaN high electron mobility transistors on low resistivity silicon for X-Band applications. IEEE Electron Device Letters, 36(9), pp. 899-901. (doi:10.1109/LED.2015.2460120)

Eblabla, A., Wallis, D.J., Guiney, I. and Elgaid, K. (2015) Novel shielded coplanar waveguides on GaN-on-low resistivity Si substrates for MMIC applications. IEEE Microwave and Wireless Components Letters, 25(7), pp. 427-429. (doi:10.1109/LMWC.2015.2429120)

Benakaprasad, B., Sharabi, S. and Elgaid, K. (2014) RF and microwave oscillator design using p-HEMT transistor. International Journal of Scientific and Research Publications, 4(8),

Aref, I. and Elgaid, K. (2013) System level modeling of a digital communication channel based on SystemC. International Journal of Future Computer and Communication, 2(3), pp. 210-214. (doi:10.7763/IJFCC.2013.V2.154)

Aghamoradi, F., McGregor, I., Roy, S. and Elgaid, K. (2011) Low-loss grounded elevated coplanar waveguide for sub-millimeter wave MMIC applications. Progress In Electromagnetics Research B, 34, pp. 103-123. (doi:10.2528/PIERB11072111)

Donadio, O., Elgaid, K. and Appleby, R. (2011) Waveguide-to-microstrip transition at G-band using elevated E-plane probe. Electronics Letters, 47(2), pp. 115-116. (doi:10.1049/el.2010.2926)

McGregor, I., Aghamoradi, F. and Elgaid, K. (2010) An approximate analytical model for the quasi-static parameters of elevated CPW lines. IEEE Transactions on Microwave Theory and Techniques, 58(12), pp. 3809-3814. (doi:10.1109/TMTT.2010.2086552)

Hwang, C.J., Lok, L.B., Thayne, I.G. and Elgaid, K. (2010) W-band microstrip band-pass filter using branch-line coupler with open stubs. Microwave and Optical Technology Letters, 52(6), pp. 1436-1439. (doi:10.1002/mop.25185)

Emhemmed, A.S., McGregor, I. and Elgaid, K. (2010) Elevated conductor coplanar waveguide-fed three-level proximity-coupled antenna for G-band applications. IET Microwaves, Antennas and Propagation, 4(11), pp. 1910-1915. (doi:10.1049/iet-map.2009.0616)

Hwang, C.-J., Lok, L.B., Chong, H.M.H., Holland, M., Thayne, I.G. and Elgaid, K. (2010) An ultra-low-power MMIC amplifier using 50nm delta In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMT. IEEE Electron Device Letters, 31(11), pp. 1230-1232. (doi:10.1109/LED.2010.2070484)

McGregor, I. and Elgaid, K. (2010) Low-power GaAs comparator and monostable. Electronics Letters, 46(17), 1214-1U70. (doi:10.1049/el.2010.1357)

Aghamoradi, F., McGregor, I. and Elgaid, K. (2009) Performance enhancement of millimetre-wave resonators using elevated CPW. Electronics Letters, 45(25), pp. 1326-1328. (doi:10.1049/el.2009.2348)

Hwang, C.J., Lok, L.B., Thayne, I.G. and Elgaid, K. (2009) Parallel coupled-line bandpass filter with branch-line shape for G-band frequency. Electronics Letters, 45(16), pp. 838-839. (doi:10.1049/el.2009.0716)

Hwang, C.-J., Chong, H.M.H., Holland, M., Thayne, I.G. and Elgaid, K. (2009) Erratum for ‘DC–35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications’. Electronics Letters, 45(14), p. 764. (doi:10.1049/el.2009.1741)

Hwang, C.J., Chong, H.M.H., Holland, M., Thayne, I.G. and Elgaid, K. (2009) DC-35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications. Electronics Letters, 45(12), pp. 632-633. (doi:10.1049/el.2009.0684)

Thayne, I., Elgaid, K., Moran, D., Cao, X., Boyd, E., McLelland, H., Holland, M., Thoms, S. and Stanley, C. (2007) 50 nm metamorphic GaAs and InPHEMTs. Thin Solid Films, 515, pp. 4373-4377. (doi:10.1016/j.tsf.2006.07.104)

Moran, D.A.J., McLelland, H., Elgaid, K., Whyte, G., Stanley, C.R. and Thayne, I. (2006) 50-nm self-aligned and 'standard' T-gate InP pHEMT comparison: the influence of parasitics on performance at the 50-nm node. IEEE Transactions on Electron Devices, 53(12), pp. 2920-2925. (doi:10.1109/TED.2006.885674)

Zhou, H., Elgaid, K., Wilkinson, C. and Thayne, I. (2006) Low-hydrogen-content silicon nitride deposited at room temperature by inductively coupled plasma deposition. Japanese Journal of Applied Physics, 45(Pt.1), pp. 8388-8392. (doi:10.1143/JJAP.45.8388)

Elgaid, K., McLelland, H., Holland, M., Moran, D.A.J., Stanley, C.R. and Thayne, I.G. (2005) 50-nm T-gate metamorphic GaAs HEMTs with fT of 440 GHz and noise figure of 0.7 dB at 26 GHz. IEEE Electron Device Letters, 26(11), pp. 784-786. (doi:10.1109/LED.2005.857716)

Elgaid, K., McLelland, H., Holland, M., Moran, D., Stanley, C. and Thayne, I. (2005) 50-nm T-gate metamorphic GaAs HEMTs with f(T) of 440 GHz and noise figure of 0.7 dB at 26 GHz. IEEE Electron Device Letters, 26, pp. 784-786. (doi:10.1109/LED.2005.857716)

Li, X., Elgaid, K., McLelland, H. and Thayne, I.G. (2005) Surface mass spctrometric analysis of SiCl4/SiF4/O-2 dry etch gate recessed 120 nm T-gate GaAs pHEMTs. Microelectronic Engineering, 78-79, pp. 233-238. (doi:10.1016/j.mee.2004.12.032)

Cao, X., Thoms, S., Macintyre, D., McLelland, H., Boyd, E., Elgaid, K., Hill, R., Stanley, C.R. and Thayne, I.G. (2004) Fabrication and performance of 50 nm T-gates for InP high electron mobility transistors. Microelectronic Engineering, 73-74, pp. 818-821. (doi:10.1016/j.mee.2004.03.058)

Elgaid, K., Zhou, H., Wilkinson, C.D.W. and Thayne, I.G. (2004) Low temperature high density Si3N4 MIM capacitor technology for MMMIC and RF-MEMs applications. Microelectronic Engineering, 73-4, pp. 452-455. (doi:10.1016/j.mee.2004.03.016)

Moran, D.A.J., Boyd, E., Elgaid, K., McEwan, F., McLelland, H., Stanley, C.R. and Thayne, I.G. (2004) Self-aligned T-gate InP HEMT realisation through double delta doping and a non-annealed ohmic process. Microelectronic Engineering, 73-74, pp. 814-817. (doi:10.1016/j.mee.2004.03.057)

Moran, D., Boyd, E., Elgaid, K., McEwan, F., McLelland, H., Stanley, C. and Thayne, I. (2004) Self-aligned T-gate InPHEMT realisation through double delta doping and a non-annealed ohmic process. Microelectronic Engineering, 73-4, pp. 814-817. (doi:10.1016/j.mee.2004.03.057)

Yang, L., Asenov, A., Watling, J., Borici, M., Barker, J., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2004) Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs. Microelectronics Reliability, 44, pp. 1101-1107. (doi:10.1016/j.microrel.2004.04.003)

Moran, D., Boyd, E., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D.S., Thoms, S., Stanley, C.R. and Thayne, I.G. (2003) Novel technologies for the realisation of GaAs pHEMTs with 120 nm self-aligned and nanoimprinted T-gates. Microelectronic Engineering, 67-89, pp. 769-774. (doi:10.1016/S0167-9317(03)00137-0)

Elgaid, K., McCloy, D. and Thayne, I. (2003) Micromachined SU8 negative resist for MMIC applications on low resistivity CMOS substrates. Microelectronic Engineering, 67-8, pp. 417-421. (doi:10.1016/S0167-9317(03)00188-6)

Macintyre, D.S., Chen, Y., Gourlay, D., Boyd, E., Moran, D., Cao, X., Elgaid, K., Stanley, C.R., Thayne, I. and Thoms, S. (2003) Nanoimprint lithography process optimization for the fabrication of high electron mobility transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21(6), pp. 2783-2787. (doi:10.1116/1.1629719)

Kalna, K., Roy, S., Asenov, A., Elgaid, K. and Thayne, I. (2002) Scaling of pseudomorphic high electron mobility transistors to decanano dimensions. Solid-State Electronics, 46, pp. 631-638.

Li, X., Elgaid, K., McLelland, H. and Thayne, I.G. (2001) Effects of pressure and capping layer thickness on sub-micron T-gate recess etching of GaAs p-HEMTs by SiCl4/SiF4/O2 reactive ion etch. Microelectronic Engineering, 57-58, pp. 633-640. (doi:10.1016/S0167-9317(01)00495-6)

Kalna, K., Asenov, A., Elgaid, K. and Thayne, I. (2001) Scaling of pHEMTs to decanano dimensions. VLSI Design, 13, pp. 435-439.

Young, P.R., McPherson, D.S., Chrisostomidis, C., Elgaid, K., Thayne, I.G., Lucyszyn, S. and Robertson, I.D. (2001) Accurate non-uniform transmission line model and its application to the de-embedding of on-wafer measurements. IEE Proceedings: Microwaves Antennas and Propagation, 148(3), pp. 153-156. (doi:10.1049/ip-map:20010402)

Elgaid, K., Li, X., Williamson, F., McLelland, H., Ferguson, S.M., Holland, M.C., Beaumont, S.P. and Thayne, I.G. (1999) Optimisation of DC and RF performance of GaAs HEMT-based Schottky diodes. Electronics Letters, 35(19), pp. 1678-1679. (doi:10.1049/el:19991104)

Ternent, G., Ferguson, S., Borsosfoldi, Z., Elgaid, K., Lohdi, T., Edgar, D., Wilkinson, C.D.W. and Thayne, I.G. (1999) Coplanar waveguide transmission lines and high Q inductors on CMOS grade silicon using photoresist and polyimide. Electronics Letters, 35(22), pp. 1957-1958. (doi:10.1049/el:19991298)

Book Sections

Emhemmed, A. and Elgaid, K. (2009) G-band bowtie dipole antenna. In: European Conference on Antennas and Propagation EuCAP 2009 Proceedings: Estrel Convention Center, Berlin, Germany, March 23-27, 2009. VDE Verlag: Berlin, Germany, pp. 949-951. ISBN 9781424447534

Hwang, C.J., Lok, L.B., Thayne, I.G. and Elgaid, K. (2009) A wide bandpass filter with defected ground structure for wide out-of-band suppression. In: APMC: 2009 Asia Pacific Microwave Conference, 7-10 December 2009, Singapore. IEEE: Piscataway, N.J., USA, pp. 2018-2021. ISBN 9781424428014 (doi:10.1109/APMC.2009.5385299)

Hwang, C.J., McGregor, I., Oxland, R., Whyte, G., Thayne, I.G. and Elgaid, K. (2009) An ultra-low power OOK RF transceiver for wireless sensor networks. In: EuMC 09: European Microwave Conference, Rome, Italy, 29 Sept - 1 Oct 2009. IEEE Computer Society: Burlingame, USA, pp. 1323-1326. ISBN 9781424447480

Lok, L.B., Singh, S., Wilson, A. and Elgaid, K. (2009) Impact of waveguide aperture dimensions and misalignment on the calibrated performance of a network analyzer from 140 to 325GHz. In: 73rd ARFTG Microwave Measurement Conference Spring 2009 Practical Applications of Nonlinear Measurements: 12 June 2009, Boston, MA. IEEE Computer Society: Piscataway, N.J., USA, pp. 32-35. ISBN 9781424434428 (doi:10.1109/ARFTG.2009.5278062)

McGregor, I., Whyte, G. and Elgaid, K. (2009) Low complexity, 165 mu W, 5 Mbit/s wideband radio front-end with range of several meters. In: IEEE MTT-S International Microwave Symposium Digest: 7-12 June 2009, Boston, MA, USA. IEEE Computer Society: Piscataway, N.J., USA, pp. 397-400. ISBN 9781424428038 (doi:10.1109/MWSYM.2009.5165717)

Aref, I.A., Ahmed, N.A., Rodriguez-Salazar, F. and Elgaid, K. (2008) RTL-level modeling of an 8B/10B encoder-decoder using SystemC. In: 2008 5th IFIP International Conference on Wireless and Optical Communications Networks (WOCN '08). IEEE Computer Society. ISBN 9781424419791 (doi:10.1109/WOCN.2008.4542493)

Lok, L., Hwang, C.J., Chong, H.M.H., Elgaid, K. and Thayne, I.G. (2008) Measurement and modeling of CPW transmission lines and power dividers on electrically thick GaAs substrate to 220GHz. In: 33rd International Conference on Infrared, Millimeter and Terahertz Waves: 15-19 September 2008, Pasadena, CA, USA. IEEE Computer Society: Piscataway, N.J., USA, pp. 734-735. ISBN 9781424421190 (doi:10.1109/ICIMW.2008.4665794)

Boyd, E., Moran, D., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D., Thorns, S., Stanley, C. and Thayne, L. (2003) 120 nm gate length E-beam and nanoimprint T-gate GaAs pHEMTs utilising non-annealed ohmic contacts. In: Compound Semiconductors 2002: Proceedings of the 29th International Symposium, Lausanne, 7-11 October 2002. Series: Institute of Physics conference series (174). Institute of Physics, pp. 291-294. ISBN 0750309423

Thayne, I. G., Elgaid, K. and Ternent, G. (2001) Devices and fabrication technology. In: Robertson, I. D. and Lucyszyn, S. (eds.) RFIC and MMIC Design and Technology. Series: IEE circuits, devices and systems series (13). IEE Press: London, UK, pp. 31-81. ISBN 9780852967867 (doi:Devices and fabrication technology)

Conference or Workshop Item

Elgaid, K., Houston, P. and Tasker, P. (2016) EPSRC Projects in Microwave, Millimetre-Wave and THz Research, Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates. European Microwave Conference, London, 3-7 Oct 2016. (Unpublished)

Conference Proceedings

Eblabla, A., Benakaprasad, B., Li, X., Wallis, D. J., Guiney, I., Humphreys, C. and Elgaid, K. (2017) Passive Components Technology for THz-Monolithic Integrated Circuits (THz-MIC). In: 18th International Radar Symposium (IRS), Prague, Czech Republic, 28-30 June 2017, pp. 1-7. ISBN 9783736993433 (doi:10.23919/IRS.2017.8008166)

Benakaprasad, B., Eblabla, A., Li, X., Thayne, I., Wallis, D.J., Guiney, I., Humphreys, C. and Elgaid, K. (2017) Terahertz Microstrip Elevated Stack Antenna Technology on GaN-on-Low Resistivity Silicon Substrates for TMIC. In: 46th European Microwave Conference, London, 3-7 Oct 2016, (doi:10.1109/EuMC.2016.7824367)

Benakaprasad, B., Eblabla, A., Li, X., Wallis, D.J., Guiney, I. and Elgaid, K. (2016) Design and Performance Comparison of Various Terahertz Microstrip Antennas on GaN-On-Low Resistivity Silicon Substrates for TMIC. In: 2016 Asia-Pacific Microwave Conference (APMC), New Delhi, India, 5-9 Dec 2016, ISBN 9781509015924 (doi:10.1109/APMC.2016.7931368)

Benakaprasad, B., Eblabla, A., Li, X., Thayne, I., Wallis, D.J., Guiney, I., Humphreys, C. and Elgaid, K. (2016) Terahertz Microstrip Single Patch Antenna Technology on GaN-on-Low Resistivity Silicon Substrates for TMIC. In: IET Colloquium on Antennas, Wireless and Electromagnetics, Glasgow, UK, 26 May 2016, (Unpublished)

Benakaprasad, B., Eblabla, A., Li, X., Thayne, I., Wallis, D., Guiney, I., Humphreys, C. and Elgaid, K. (2016) Terahertz Monolithic Integrated Circuits (TMICs) Array Antenna Technology On GaN-on-Low Resistivity Silicon Substrates. In: 41st International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2016), Copenhagen, Denmark, 25-30 Sept 2016, (doi:10.1109/IRMMW-THz.2016.7758488)

Eblabla, A., Benakaprasad, B., Li, X., Wallis, D.J., Guiney, I. and Elgaid, K. (2016) High Frequency Active and Passives Devices using GaN on Low Resistivity Silicon. In: ARMMS RF & Microwave Society Conference, Milton Common Nr Thame, UK, 18-19 Apr 2016, (Unpublished)

Eblabla, A., Li, X., Thayne, I., Wallis, D.J., Guiney, I. and Elgaid, K. (2016) MMIC-Compatible Microstrip Technology for GaN-HEMTs on Low Resistivity Silicon Substrate. In: International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016, (Unpublished)

Eblabla, A., Li, X., Wallis, D. J., Guiney, I. and Elgaid, K. (2016) GaN-based HEMTs on Low Resistivity Silicon Technology for Microwave Applications. In: 8th Wide Bandgap Semiconductor and Components Workshop, Harwell. UK, 12-13 Sept 2016,

Eblabla, A., Li, X., Thayne, I., Wallis, D. J., Guiney, I. and Elgaid, K. (2015) Effect Of AlN Spacer In The Layer Structure On High Rf Performance GaN-Based HEMTs On Low Resistivity Silicon At K-Band Application. In: 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 Aug - 4 Sept 2015, (Unpublished)

Ahmed, N. A. S., Emhemmed, A. and Elgaid, K. (2013) Dual-Radios Hypermesh Network Based on CSMA Protocol. In: 2013 International Conference on Information Networking (ICOIN), Bangkok, Thailand, 28-30 Jan 2013, pp. 198-203. ISBN 9781467357401 (doi:10.1109/ICOIN.2013.6496376)

Ahmed, N. A. S. and Elgaid, K. (2012) Single and Multi-Channel Networks: Performance Comparison at System Level. In: 2012 8th International Symposium on Communication Systems, Networks & Digital Signal Processing (CSNDSP), Poznan, Poland, 18-20 July 2012, pp. 1-6. (doi:10.1109/CSNDSP.2012.6292766)

Emhemmed, A. S., Ahmed, N. A. and Elgaid, K. (2012) EC-CPW Fed Elevated Patch Antenna. In: 24th International Conference on Microelectronics (ICM), Algiers, Algeria, 16-20 Dec 2012, pp. 1-4. ISBN 9781467352895 (doi:10.1109/ICM.2012.6471374)

Ahmed, N., Aref, I., Rodriguez-Salazar, F. and Elgaid, K. (2010) Network performance evaluation based on SoC design methodology. In: IEEE, IET International Symposium on Communication Systems, Networks and Digital Signal Processing CSNDSP 2010, Newcastle, UK, 21-23 Jul 2010, pp. 256-261.

Aref, I., Ahmed, N., Rodriguez-Salazar, F. and Elgaid, K. (2010) Measuring and optimising convergence and stability in terms of system construction in SystemC. In: 17th IEEE International Conference and Workshops on Engineering of Computer Based Systems (ECBS), 2010, Oxford, UK, 22-26 Mar 2010, pp. 263-267. ISBN 9781424465378 (doi:10.1109/ECBS.2010.36)

Aref, I., Ahmed, N., Rodriguez-Salazar, F. and Elgaid, K. (2010) Modeling of flocking behaviour system in SystemC. In: Sixth Advanced International Conference on Telecommunications (AICT), 2010, Barcelona, Spain, 9-15 May 2010, pp. 358-363. ISBN 9781424467488 (doi:10.1109/AICT.2010.29)

Aref, I., Ahmed, N., Rodriguez-Salazar, F. and Elgaid, K. (2010) Wireless extension into existing SystemC design methodology. In: 2nd International Conference on Computer Engineering and Technology (ICCET), 2010, Chengdu , China, 16-19 Apr 2010, pp. 374-379. ISBN 9781424463473 (doi:10.1109/ICCET.2010.5485893)

Ahmed, N.A., Aref, I.A., Rodriguez-Salazar, F. and Elgaid, K. (2009) Wireless channel model based on SoC design methodology. In: Fourth International Conference on Systems and Networks Communications ICSNC'09, Porto, Portugal, 20-25 Sep 2009, pp. 72-75. ISBN 9780769537757 (doi:10.1109/ICSNC.2009.81)

Emhemmed, A.S. and Elgaid, K. (2009) Broadband Micromachined Microstrip Patch Antenna for G-band Applications. In: European Microwave Conference, Manchester, UK, 2009, pp. 374-377. ISBN 978-1-4244-4748-0

Emhemmed, A.S., Elgaid, K. and Lok, L.B. (2009) Integrated Micromachined Millimeter Wave Patch Antenna. In: Antenna Technology, 2009. iWAT 2009. IEEE International Workshop on, Santa Monica, CA., 2-4 March, 2009, pp. 1-4. ISBN 9781424443956 (doi:10.1109/IWAT.2009.4906903)

Emhemmed, A.S., McGregor, I. and Elgaid, K. (2009) 200GHz Broadband Proximity Coupled Patch Antenna. In: 2009 IEEE International Conference on Ultra-Wideband, Vancouver, Canada, 9-11 September 2009, pp. 404-407. (doi:10.1109/ICUWB.2009.5288756)

Lok, L.B., Hwang, C.J., Chong, H.M.H., Thayne, I.G. and Elgaid, K. (2009) A W-band MMIC vector modulator utilizing tandem couplers and 50nm MHEMTs. In: European Microwave Conference, Rome, Italy, 29 Sept - 1 Oct 2009, pp. 1251-1254.

McGregor, I., Lok, L.B., Hwang, C.J., Oxland, R., Whyte, G., Thayne, I.G. and Elgaid, K. (2009) Low complexity, low power, 10 GHz super-regenerative transceiver. In: APMC: 2009 Asia Pacific Microwave Conference, Singapore, 7-10 December 2009, pp. 587-590.

Elgaid, K., Holland, M., McLelland, H., Moran, D., Thoms, S., Stanley, C. and Thayne, I. (2006) 50nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications. In: Indium Phosphide & Related Materials, Princeton, USA, Paper TuB2.

Elgaid, K., Thayne, I., Whyte, G., Martens, J. and Culver, D. (2006) Parasitic moding influences on coplanar waveguide passive components at G-band frequency. In: European Microwave Conference, Manchester, UK,

McGregor, I., Whyte, G., Elgaid, K., Wasige, E. and Thayne, I. (2006) A 400 micro W Tx/380 microW Rx 2.4GHz super-regenerative GaAs transceiver. In: European Microwave Conference, Manchester, UK, pp. 1523-1525.

Moran, D., McLelland, H., Elgaid, K., Stanley, C. and Thayne, I. (2006) Scaling of self-aligned T-gate InGaAs/InAlAs HEMT technology. In: UK III-V Compound Semiconductors 2006, Sheffield, UK,

Thayne, I., Elgaid, K., Holland, M., McLelland, H., Moran, D.A.J., Thoms, S. and Stanley, C. (2006) 50 nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications. In: 2006 International Conference on Indium Phosphide and Related Materials, Princeton, New Jersey, USA, 7-11 May 2006, pp. 181-184. ISBN 0780395581 (doi:10.1109/ICIPRM.2006.1634143)

Thayne, I.G. et al. (2006) III-V MOSFETs for Digital Applications: An Overview. In: UK III-V Compound Semiconductors 2006, Sheffield, UK,

Elgaid, K., McLelland, H., Stanley, C. and Thayne, I. (2005) Low noise W-band MMMIC amplifier using 50nm InP technology for millimeterwave receivers applications. In: 2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALSConference proceedings - indium phosphide and related materials, NEW YORK, pp. 523-525. ISBN 1092-8669

Elgaid, K., Moran, D., McLelland, H., Holland, M. and Thayne, I. (2005) Low noise high performance 50nm T-GATE metamorphic HEMT with cut-off frequency FTOF 440Ghz for millimeterwave imaging receivers applications. In: 2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALSConference proceedings - indium phosphide and related materials, NEW YORK, pp. 141-143. ISBN 1092-8669

Elgaid, K., Zhou, H., Wilkinson, C. and Thayne, I. (2005) Room temperature deposited Si3N4 characterization and applications in MMICs. In: 8th International symposium on Silicon Nitride and Silicon dioxide thin insulating films and emerging dielectrics, Quebec, Canada,

Elgaid, K., McLelland, H., Stanley, C.R. and Thayne, I.G. (2005) Low noise W-band MMMIC amplifier using 50 nm InP technology for millimeterwave receivers applications. In: International Conference on Indium Phosphide and Related Materials, Piscataway, 8-12 May 2005, pp. 523-525. ISBN 0780388917 (doi:10.1109/ICIPRM.2005.1517548)

Elgaid, K., Moran, D., McLelland, H., Holland, M. and Thayne, I.G. (2005) Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency fT of 440 GHz for millimeterwave imaging receivers applications. In: IEEE International Conference on Indium Phosphide and Related Materials, 2005, Glasgow, Scotland, 8-12 May 2005, pp. 141-143. ISBN 0780388917 (doi:10.1109/ICIPRM.2005.1517439)

Hettak, K., Stubbs, M., Elgaid, K. and Thayne, I. (2005) Design and characterisation of elevated coplanar waveguide and thin film microstrip structures for mm-wave applications. In: European Microwave Conference, Paris, France,

Hettak, K., Stubbs, M., Elgaid, K. and Thayne, I. (2005) A compact high performance semi-lumped low pass filter fabricated with a standard airbridge process. In: European Microwave Conference, Paris, France,

Kalna, K., Elgaid, K., Thayne, I. and Asenov, A. (2005) Modelling of InPHEMTs with high indium content channels. In: 2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALSConference proceedings - indium phosphide and related materials, NEW YORK, pp. 192-195. ISBN 1092-8669

Moran, D., Cao, X., Elgaid, K., Boyd, E., Chen, Y., Thoms, S., McLelland, H., Stanley, C., Holland, M. and Thayne, I. (2005) Sub 100nm III-V HEMT technology: Approaching the Terahertz Regime. In: International Workshop on Terahertz Technology, Osaka, Japan,

Thayne, I., Elgaid, K., Moran, D., Cao, X., Boyd, E., McLelland, H., Holland, M., Thoms, S. and Stanley, C. (2005) 50nm Metamorphic GaAs and InP HEMTs. In: 3rd International Conference for Advanced Materials and Technologies, Singapore,

Boyd, E., Thoms, S., Moran, D., Elgaid, K., Cao, X., Holland, M., Stanley, C. and Thayne, I. (2004) Fabrication of very high performance 50nm T-gate metamorphic GaAs HEMT's with exceptional uniformity. In: European Gallium Arsenide and other Compound Semiconductors Application Symposium,GaAs 2004, Amsterdam, The Netherlands,

Cao, X., Elgaid, K., McLelland, H., Stanley, C. and Thayne, I. (2004) High performance 50nm T-gate In0.52Al0.48As/In0.7Ga0.3As psuedomorphic high electron mobility transistors. In: 16th International Conference on Indium phosphide and Related Materials, Kagoshima, Japan,

Elgaid, K., McLelland, H., Cao, X., Boyd, E., Moran, D., Thoms, S., Zhou, H., Wilkinson, C., Stanley, C. and Thayne, I. (2004) An array-based design methodology for the realisation of 94GHz MMMIC amplifiers. In: European Gallium Arsenide and other Compound Semiconductors Application Symposium,GaAs 2004, Amsterdam, The Netherlands,

Elgaid, K., McLelland, H., Cao, X. and Thayne, I. (2004) Integration of a novel, high quality Si3N4 metal insulator metal (MIM) capacitors deposited by (ICP-CVD) at room temperature with 50nm T-gate metamorphic HEMTS to realise monolithic millimetre-wave integrated circuits (MMMICs). In: 16th International Conference on Indium phosphide and Related Materials, Kagoshima, Japan,

Elgaid, K., Zhou, H., Wilkinson, C. and Thayne, I. (2004) Low temperature high density highly uniform Si3N4 technology for passive and active devices in MMMIC applications. In: GaAs Mantech 2004, Tampa, USA,

Johnson, N., Khokhar, A., Elgaid, K., Thayne, I., Drysdale, T. and Cumming, D. (2004) Tools for metamaterials applications from GHz to optical frequencies. In: First Workshop of the Metamorphose, Lille-Louvain-la-Neuve, Belgium, France,

Li, X., Elgaid, K., McLelland, H. and Thayne, I. (2004) Surface mass spectrometric analysis of SiCl4/SiF4/O2 dry-etch gate recessed 120nm T-gate HEMTs. In: Microelectronic and Nanoelectronic Engineering 2004, Rotterdam, The Netherlands,

Moran, D., Boyd, E., Elgaid, K., McLelland, H., Stanley, C. and Thayne, I. (2004) 50nm T-gate lattice-matched InP HEMTs with fT of 430GHz using non-annealed ohmic contact process. In: European Gallium Arsenide and other Compound Semiconductors Application Symposium,GaAs 2004, Amsterdam, The Netherlands,

Thayne, I., Cao, X., Moran, D.A.J., Boyd, E., Elgaid, K., McLelland, H., Holland, M., Thoms, S. and Stanley, C. (2004) Very high performance 50 nm T-gate III-V HEMTs enabled by robust nanofabrication technologies. In: 4th IEEE Conference on Nanotechnology 2004, Munich, Germany, 16-19 August 2004, pp. 95-97. ISBN 0780385365 (doi:10.1109/NANO.2004.1392261)

Thoms, S., Macintyre, D., Elgaid, K., Stanley, C. and Thayne, I. (2004) The use of imprint lithography to fabricate high electron mobility transistors. In: International Conference on Electron, Photon, Ion beams and Nanofabrication, San Diego, USA,

Cao, X., Thoms, S., Macintyre, D., McLelland, H., Boyd, E., Elgaid, K., Hill, R., Stanley, C. and Thayne, I. (2003) Fabrication and performance of 50nm T-gate for high electron mobility transistors. In: Microelectronic and Nanoelectronic Engineering 2003, Cambridge, UK,

Elgaid, K. and Thayne, I. (2003) Passvie and active devices using Si and SiGe for MMIC applications. In: 3rd ESA Workshop on mm-wave Technology, Helsinki, Finland,

Elgaid, K., Zhou, H., Wilkinson, C. and Thayne, I. (2003) Low temperature high density Si3N4 MIM capacitors technology for MMIC and RF-MEMs applications. In: Microelectronic and Nanoelectronic Engineering, Cambridge, UK,

Li, X., Elgaid, K., McLelland, H. and Thayne, I. G. (2003) A Novel Single Step Sol-Gel Process for Silica on Silicon PLC's. In: 14th International Conference on Integrated Optics and Optical Fibre Communication, Rimini, Italy, 22-24 Sept 2003,

Moran, D., Kalna, K., Elgaid, K., McEwan, F., McLelland, H., Zhuang, L., Thayne, I., Stanley, C. and Asenov, A. (2003) Self-aligned 0.12micron T-gate InGaAs/InAlAs HEMT technology utilizing a non-annealed contact strategy. In: ESSDERC 2003 - European Solid-State Device Research Conference, Estoril, Portugal, pp. 315-318.

Thayne, I. et al. (2003) Advanced III-V HEMT MMIC Technologies for Millemeter-Wave Applications. In: European Microwave Week 2003, Munich, Germany, 6-10 Oct 2003,

Yang, L., Asenov, A., Watling, J., Borici, M., Barker, J., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2003) Optimisation of sub 11nm Si/SiGe MODFETs for high linearity applications. In: 14th Workshop on Modeling and Simulation of Electron Devices, Barcelona, Spain, pp. 41-44.

Yang, L., Asenov, A., Watling, J., Borici, M., Barker, J., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2003) Optimisation of sub 11nm Si/SiGe MODFETs for high linearity applications. In: IEEE Conference on Electron devices and solid state circuits, Hong Kong, pp. 331-344.

Yang, L., Asenov, A., Borici, M., Watling, J. R., Barker, J. R., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2003) Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications. In: IEEE Conference on Electron Devices and Solid-State Circuits, Kowloon, Hong Kong, 16-18 December 2003, pp. 331-334. ISBN 0780377494 (doi:10.1109/EDSSC.2003.1283543)

Boyd, E., Moran, D., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D., Thoms, S., Stanley, C. and Thayne, I. (2002) 120nm gate length e-beam and nanoimprint T-gate GaAs pHEMTs itilising non-annealed ohmic contacts. In: International Symposium on Compound Semiconductors, Lausanne, Switzerland,

Boyd, E., Moran, D., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D., Thoms, S., Stanley, C. R. and Thayne, I. G. (2002) 120nm Gate Length E-Beam and Nanoimprint T-Gate GaAs pHEMTs Utilizing Non-Annealed Ohmic Contacts. In: Compound Semiconductors 2002, Lausanne, Switzerland, 7-10 Oct 2002, ISBN 9780750309424

Burns, G., Chong, H., Edgar, D., Ross, A., Elgaid, K., McLelland, H., Ferguson, S., McEwan, F. and Thayne, I. (2002) Millimetre-wave high frequency photonic crystal antennas. In: IEEE 2002 High Frequency Postgraduate Student Colloquium, London, UK,

Edgar, D. et al. (2002) Millimeter-wave performance of In/AlAs/InGaAs HEMT's using a UVIII/PMMA bilayer for 70nm T-gate fabrication. In: European Microwave Conference, Milan, Italy,

Edgar, D. L. et al. (2002) Millimetre-wave Performance of InAlAs/InGaAs HEMTs Using a UVIII/PMMA Bilayer for 70nm T-Gate Fabrication. In: European Microwave Week 2002, Milan, Italy, 23-27 Sept 2002,

Elgaid, K., McCloy, D., Edgar, D. and Thayne, I. (2002) Coplanar waveguide and spiral inductors for MMIC applications on low resistivity CMOS grade silicon using micromachined SU8 negative resist. In: European Microwave Conference, Milan, Italy,

Elgaid, K., McCloy, D., Ferguson, S. and Thayne, I. (2002) Coplanar waveguide and spiral inductors for MMIC applications on low resistivity CMOS grade silicon using micromachined SU8 negative resist. In: Asia Pacific Conference, Kyoto, Japan,

Elgaid, K., McCloy, D. and Thayne, I. (2002) Micromachined SU8 negative resist for MMIC applications on low resistivity CMOS substrate. In: Microelectronic and Nanoelectronic Engineering 2002, Lugano, Switzerland,

Moran, D., Boyd, E., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D., Thoms, S., Stanley, C. and Thayne, I. (2002) Novel technologies for the realisation of GaAs pHEMTs wtih 20nm self-aligned and nanoimprinted T-gates. In: Micro- and NanoEngineering 2002, Lugano, Switzerland, ISBN 0167-9317

Chongcheawchamnan, M., Nam, S., Robertson, I., Elgaid, K. and Thayne, I. (2001) Ultrawideband characterisation of CPW GaAs monolithic 60 GHz couplers using overlaid structures. In: Asia pacific microwave conference, Taipei,

Yip, J., Collier, R., Jastrebski, A., Edgar, D., Elgaid, K., Thayne, I. and Li, D. (2001) Substrate-modes in doubled-layered coplanar waveguide. In: European Microwave Conference, London,

Kalna, K., Asenov, A., Elgaid, K. and Thayne, I. (2000) Effect of impact ionization in scaled pHEMTs. In: 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications., Glasgow, UK, 13-14 November 2000, pp. 236-241. ISBN 078036550X

Kalna, K., Asenov, A., Elgaid, K. and Thayne, I. (2000) Performance of aggressively scaled pseudomorphic HEMTs: a monte carlo simulation study. In: Third International EuroConference on Advanced Semiconductor Devices and Microsystems., Smolenice Castle, Slovakia, 16-18 October 2000, pp. 55-58. ISBN 0780359399

Kalna, K., Roy, S., Asenov, A., Elgaid, K. and Thayne, I. (2000) RF analysis of aggressively scaled pHEMTs. In: 30th European Solid-State Device Research Conference., Cork, Ireland, 11-13 September 2000, pp. 156-159. ISBN 2863322486

Li, X., Elgaid, K., McLelland, H. and Thayne, I.G. (2000) Effects of Pressure and Capping Layer Thickness on Sub-Micron T-Gate Recess Etching of GaAs pHEMTs by SiCl4/SiF4/O2 Reactive Ion Etch. In: 26th International Conference on Micro- and Nano-Engineering, Jena, Germany, 18-21 Sept 2000,

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