Mr Aniket Dhongde

  • Demonstrator (School of Engineering)

Publications

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Jump to: 2021
Number of items: 2.

2021

Karami, K. , Taking, S., Dhongde, A., Ofiare, A., Al-Khalidi, A. and Wasige, E. (2021) Heavily Doped n++ GaN Cap Layer AlN/GaN Metal Oxide Semiconductor High Electron Mobility Transistor. International Journal of Nanoelectronics and Materials, 14, pp. 45-51.

Karami, K. , Taking, S., Ofiare, A., Dhongde, A., Al-Khalidi, A. and Wasige, E. (2021) High performance of n++GaN/AlN/GaN high electron mobility transistor. 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE), Bristol, UK, 14-17 June 2021.

This list was generated on Sat May 21 22:36:49 2022 BST.
Number of items: 2.

Articles

Karami, K. , Taking, S., Dhongde, A., Ofiare, A., Al-Khalidi, A. and Wasige, E. (2021) Heavily Doped n++ GaN Cap Layer AlN/GaN Metal Oxide Semiconductor High Electron Mobility Transistor. International Journal of Nanoelectronics and Materials, 14, pp. 45-51.

Conference or Workshop Item

Karami, K. , Taking, S., Ofiare, A., Dhongde, A., Al-Khalidi, A. and Wasige, E. (2021) High performance of n++GaN/AlN/GaN high electron mobility transistor. 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE), Bristol, UK, 14-17 June 2021.

This list was generated on Sat May 21 22:36:49 2022 BST.