Miss Dilini Hemakumara

  • Affiliate (School of Engineering)

Publications

List by: Type | Date

Jump to: 2021 | 2019 | 2018 | 2017 | 2016 | 2015
Number of items: 20.

2021

Knoops, H. C. M., Arts, K., Buiter, J. W., Martini, L. M., Engeln, R., Hemakumara, D. T., Powell, M., Kessels, W. M. M. (E.), Hodson, C. J. and O’Mahony, A. (2021) Innovative remote plasma source for atomic layer deposition for GaN devices. Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 39(6), 062403. (doi: 10.1116/6.0001318)

2019

Hemakumara, D., Li, X. , Floros, K., Cho, S., Guinney, I., Humphreys, C., Thayne, I. G., O'Mahony, A., Knoops, H. and Moran, D. (2019) Improved Performance of GaN Metal-Oxide-Semiconductor Capacitors byPplasma ALD of AlN Interlayer. AVS 19th International Conference on Atomic Layer Deposition (ALD 2019) / 6th International Atomic Layer Etching Workshop (ALE 2019), Washington, USA, 21-24 July 2019.

Li, X. , Fu, Y.-C., Cho, S.-J., Hemakumara, D., Floros, K., Moran, D. and Thayne, I. G. (2019) Developments of Atomic Layer Etch Processes and their Applications in Fabricating III-V Compound Semiconductor Devices. AVS 19th International Conference on Atomic Layer Deposition (ALD 2019) / 6th International Atomic Layer Etching Workshop (ALE 2019), Washington, USA, 21-24 July 2019.

Li, X. , Hemakumara, D., Fu, Y.-C., Moran, D. and Thayne, I. (2019) A Study of In-situ X-ray Photoelectron Spectroscopy Surface Analysis in Development of Atomic Layer Etch for GaN/AlGaN Based Power Device Fabrication. 11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 12th International Conference on Plasma-Nano Technology & Science (ISPlasma2019 / IC-PLANTS2019), Nagoya, Japan, 17-21 March 2019.

2018

Morozov, D. , Doyle, S. M., Banerjee, A., Brien, T. L.R., Hemakumara, D., Thayne, I. G. , Wood, K. and Hadfield, R. H. (2018) Design and characterisation of titanium nitride sub-arrays of kinetic inductance detectors for passive terahertz imaging. Journal of Low Temperature Physics, 193(3-4), pp. 196-202. (doi: 10.1007/s10909-018-2023-z)

Banerjee, A., Heath, R. M. , Morozov, D. , Hemakumara, D., Nasti, U., Thayne, I. and Hadfield, R. H. (2018) Optical properties of refractory metal based thin films. Optical Materials Express, 8(8), pp. 2072-2088. (doi: 10.1364/OME.8.002072)

Li, X. , Zhou, H., Hemakumara, D., Cho, S.-J., Floros, K., Moran, D. and Thayne, I. (2018) A Study of In-Situ Auger Spectroscopic Surface Analysis in Development of Atomic Layer Etch for GaN/AlGaN Based Power Device Fabrication. 10th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 11th International Conference on Plasma-Nano Technology & Science (ISPlasma2018 / IC-PLANTS2018), Nagoya, Japan, 4-8 March 2018.

Li, X. , Cho, S.-J., Floros, K., Hemakumara, D., Zhou, H., Guiney, I., Moran, D. , Humphreys, C. and Thayne, I.G. (2018) In-situ Auger Spectroscopy Analysis of an Atomic Layer Etching Process for GaN/AlGaN-based Power Device Fabrication. UKNC Winter Conference 2018, Manchester, UK, 10-11 Jan 2018.

Li, X. , Zhou, H., Flores, K., Cho, S.-J., Hemakumara, D., Moran, D. and Thayne, I. (2018) Optimization of Atomic Layer Etch Process for Fabrication of Dual Barrier GaN-Based Power Device Using In-Situ Auger Spectrometric Surface Analysis. AVS 18th International Conference on Atomic Layer Deposition (ALD 2018) and the 5th International Atomic Layer Etching Workshop (ALE 2018), Incheon, South Korea, 29 Jul-1 Aug 2018.

2017

Hemakumara, D., Li, X. , Floros, K., Cho, S., Guiney, I., Moran, D. , Humphreys, C., O'Mahony, A., Knoops, H. and Thayne, I. G. (2017) 4x Reduction in Gan MOSCAP Flatband Voltage Hysteresis with an In-situ Deposited Sin Cap and Device Processing in a Cluster Tool. 12th International Conference on Nitride Semiconductors, Strasbourg, France, 24-28 July 2017.

Hemakumara, D., Li, X. , Cho, S., Floros, K., Guiney, I., Moran, D. , Humphreys, C., O'Mahony, A., Knoops, H. and Thayne, I.G. (2017) The Impact on GaN MOS Capacitor Performance of In‐situ Processing in a Clustered ALD/ICP/RIE Tool. AVS 17th International Conference on Atomic Layer Deposition (ALD 2017) featuring the 4th International Atomic Layer Etching Workshop (ALE 2017), Denver, CO, USA, 15-18 Jul 2017.

Li, X. et al. (2017) Atomic layer etch processes developed in an ICP/RIE etching system for etching III-V compound semiconductor materials. AVS 17th International Conference on Atomic Layer Deposition (ALD 2017) featuring the 4th International Atomic Layer Etching Workshop (ALE 2017), Denver, CO, USA, 15-18 Jul 2017.

Fu, Y.-C., Li, X. , Peralagu, U. , Hemakumara, D., Millar, D. A.J., Steer, M. and Thayne, I. G. (2017) Scaled HfO2/In0.53Ga0.47As MOSCAPs via Inserting TiN Caping Layer for III-V Low Power Device Application. UK Semiconductors 2017, Sheffield, UK, 12-13 July 2017.

Li, X. , Floros, K., Cho, S.-J., Hemakumara, D., Moran, D. and Thayne, I. (2017) Damage to Algan/Gan Power Device Materials from Cl2 and Ar Plasma Based Atomic Layer Etching and its Elimilation via a Low Temperature Rapid Thermal Annealing. 9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 10th International Conference on Plasma-Nano Technology & Science (ISPlasma2017 / IC-PLANTS2017), Aichi, Japan, 1-5 March 2017.

2016

Li, X. , Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) An Hbr/Ar Atomic Layer Etch Process for Precision Gate Recess Etching of Gan-Based Transistors. UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016.

Floros, K., Li, X. , Guiney, I., Cho, S.-J., Ternent, G., Hemakumara, D., Wasige, E. , Moran, D.A.J. , Humphries, C.J. and Thayne, I.G. (2016) A Dual Barrier InAlN/AlGaN/GaN HEMT on Si Substrate with Pt Based Gates. In: 9th International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016, (Unpublished)

Floros, K. et al. (2016) Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

Li, X. , Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. 42nd International Conference on Micro and Nano Engineering (MNE 2016), Vienna, Austria, 19-23 Sept 2016. (Unpublished)

Li, X. , Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. In: UK Semiconductor Conference, Sheffield, UK, 6-7 July 2016, (Unpublished)

2015

Li, X. , Floros, K., Hemakumara, D., Moran, D. and Thayne, I. G. (2015) Realisation of Low Annealing Temperature and Low Resistance Ohmic Contacts forAlGaN/GaN-Based Power Devices Via SiH4 Inductively Coupled Plasma Treatment. In: UK Semiconductor Conference, Sheffield, UK, 1-2 July 2015,

This list was generated on Mon May 23 02:20:13 2022 BST.
Number of items: 20.

Articles

Knoops, H. C. M., Arts, K., Buiter, J. W., Martini, L. M., Engeln, R., Hemakumara, D. T., Powell, M., Kessels, W. M. M. (E.), Hodson, C. J. and O’Mahony, A. (2021) Innovative remote plasma source for atomic layer deposition for GaN devices. Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 39(6), 062403. (doi: 10.1116/6.0001318)

Morozov, D. , Doyle, S. M., Banerjee, A., Brien, T. L.R., Hemakumara, D., Thayne, I. G. , Wood, K. and Hadfield, R. H. (2018) Design and characterisation of titanium nitride sub-arrays of kinetic inductance detectors for passive terahertz imaging. Journal of Low Temperature Physics, 193(3-4), pp. 196-202. (doi: 10.1007/s10909-018-2023-z)

Banerjee, A., Heath, R. M. , Morozov, D. , Hemakumara, D., Nasti, U., Thayne, I. and Hadfield, R. H. (2018) Optical properties of refractory metal based thin films. Optical Materials Express, 8(8), pp. 2072-2088. (doi: 10.1364/OME.8.002072)

Conference or Workshop Item

Hemakumara, D., Li, X. , Floros, K., Cho, S., Guinney, I., Humphreys, C., Thayne, I. G., O'Mahony, A., Knoops, H. and Moran, D. (2019) Improved Performance of GaN Metal-Oxide-Semiconductor Capacitors byPplasma ALD of AlN Interlayer. AVS 19th International Conference on Atomic Layer Deposition (ALD 2019) / 6th International Atomic Layer Etching Workshop (ALE 2019), Washington, USA, 21-24 July 2019.

Li, X. , Fu, Y.-C., Cho, S.-J., Hemakumara, D., Floros, K., Moran, D. and Thayne, I. G. (2019) Developments of Atomic Layer Etch Processes and their Applications in Fabricating III-V Compound Semiconductor Devices. AVS 19th International Conference on Atomic Layer Deposition (ALD 2019) / 6th International Atomic Layer Etching Workshop (ALE 2019), Washington, USA, 21-24 July 2019.

Li, X. , Hemakumara, D., Fu, Y.-C., Moran, D. and Thayne, I. (2019) A Study of In-situ X-ray Photoelectron Spectroscopy Surface Analysis in Development of Atomic Layer Etch for GaN/AlGaN Based Power Device Fabrication. 11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 12th International Conference on Plasma-Nano Technology & Science (ISPlasma2019 / IC-PLANTS2019), Nagoya, Japan, 17-21 March 2019.

Li, X. , Zhou, H., Hemakumara, D., Cho, S.-J., Floros, K., Moran, D. and Thayne, I. (2018) A Study of In-Situ Auger Spectroscopic Surface Analysis in Development of Atomic Layer Etch for GaN/AlGaN Based Power Device Fabrication. 10th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 11th International Conference on Plasma-Nano Technology & Science (ISPlasma2018 / IC-PLANTS2018), Nagoya, Japan, 4-8 March 2018.

Li, X. , Cho, S.-J., Floros, K., Hemakumara, D., Zhou, H., Guiney, I., Moran, D. , Humphreys, C. and Thayne, I.G. (2018) In-situ Auger Spectroscopy Analysis of an Atomic Layer Etching Process for GaN/AlGaN-based Power Device Fabrication. UKNC Winter Conference 2018, Manchester, UK, 10-11 Jan 2018.

Li, X. , Zhou, H., Flores, K., Cho, S.-J., Hemakumara, D., Moran, D. and Thayne, I. (2018) Optimization of Atomic Layer Etch Process for Fabrication of Dual Barrier GaN-Based Power Device Using In-Situ Auger Spectrometric Surface Analysis. AVS 18th International Conference on Atomic Layer Deposition (ALD 2018) and the 5th International Atomic Layer Etching Workshop (ALE 2018), Incheon, South Korea, 29 Jul-1 Aug 2018.

Hemakumara, D., Li, X. , Floros, K., Cho, S., Guiney, I., Moran, D. , Humphreys, C., O'Mahony, A., Knoops, H. and Thayne, I. G. (2017) 4x Reduction in Gan MOSCAP Flatband Voltage Hysteresis with an In-situ Deposited Sin Cap and Device Processing in a Cluster Tool. 12th International Conference on Nitride Semiconductors, Strasbourg, France, 24-28 July 2017.

Hemakumara, D., Li, X. , Cho, S., Floros, K., Guiney, I., Moran, D. , Humphreys, C., O'Mahony, A., Knoops, H. and Thayne, I.G. (2017) The Impact on GaN MOS Capacitor Performance of In‐situ Processing in a Clustered ALD/ICP/RIE Tool. AVS 17th International Conference on Atomic Layer Deposition (ALD 2017) featuring the 4th International Atomic Layer Etching Workshop (ALE 2017), Denver, CO, USA, 15-18 Jul 2017.

Li, X. et al. (2017) Atomic layer etch processes developed in an ICP/RIE etching system for etching III-V compound semiconductor materials. AVS 17th International Conference on Atomic Layer Deposition (ALD 2017) featuring the 4th International Atomic Layer Etching Workshop (ALE 2017), Denver, CO, USA, 15-18 Jul 2017.

Fu, Y.-C., Li, X. , Peralagu, U. , Hemakumara, D., Millar, D. A.J., Steer, M. and Thayne, I. G. (2017) Scaled HfO2/In0.53Ga0.47As MOSCAPs via Inserting TiN Caping Layer for III-V Low Power Device Application. UK Semiconductors 2017, Sheffield, UK, 12-13 July 2017.

Li, X. , Floros, K., Cho, S.-J., Hemakumara, D., Moran, D. and Thayne, I. (2017) Damage to Algan/Gan Power Device Materials from Cl2 and Ar Plasma Based Atomic Layer Etching and its Elimilation via a Low Temperature Rapid Thermal Annealing. 9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 10th International Conference on Plasma-Nano Technology & Science (ISPlasma2017 / IC-PLANTS2017), Aichi, Japan, 1-5 March 2017.

Li, X. , Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) An Hbr/Ar Atomic Layer Etch Process for Precision Gate Recess Etching of Gan-Based Transistors. UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016.

Li, X. , Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. 42nd International Conference on Micro and Nano Engineering (MNE 2016), Vienna, Austria, 19-23 Sept 2016. (Unpublished)

Conference Proceedings

Floros, K., Li, X. , Guiney, I., Cho, S.-J., Ternent, G., Hemakumara, D., Wasige, E. , Moran, D.A.J. , Humphries, C.J. and Thayne, I.G. (2016) A Dual Barrier InAlN/AlGaN/GaN HEMT on Si Substrate with Pt Based Gates. In: 9th International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016, (Unpublished)

Floros, K. et al. (2016) Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

Li, X. , Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. In: UK Semiconductor Conference, Sheffield, UK, 6-7 July 2016, (Unpublished)

Li, X. , Floros, K., Hemakumara, D., Moran, D. and Thayne, I. G. (2015) Realisation of Low Annealing Temperature and Low Resistance Ohmic Contacts forAlGaN/GaN-Based Power Devices Via SiH4 Inductively Coupled Plasma Treatment. In: UK Semiconductor Conference, Sheffield, UK, 1-2 July 2015,

This list was generated on Mon May 23 02:20:13 2022 BST.

Research datasets

Jump to: 2019
Number of items: 1.

2019

Hadfield, R. , Thayne, I., Morozov, D. , Heath, R., Banerjee, A., Nasti, U. and Hemakumara, D. (2019) Optical properties of refractory metal based thin films. [Data Collection]

This list was generated on Mon May 23 02:20:15 2022 BST.