Dr Fikru Adamu-Lema

  • Research Associate (Electronic & Nanoscale Engineering)

telephone: 01413304792
email: Fikru.Adamu-Lema@glasgow.ac.uk

School of Engineering, Rankine Building

Publications

List by: Type | Date

Jump to: 2020 | 2019 | 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2011 | 2005
Number of items: 37.

2020

Xeni, N., Ghannam, R. , Georgiev, V. , Adamu-Lema, F., Badami, O. and Asenov, A. (2020) The Use of TCAD Simulations in Semiconductor Devices Teaching. Transnational Engineering Education Using Technology Workshop (TREET 2020), Glasgow, UK, 31 Jul 2020. (Accepted for Publication)

Berrada, S., Carrillo-Nunez, H., Lee, J., Medina Bailon, C., Dutta, T., Badami, O., Adamu-Lema, F., Thirunavukkarasu, V., Georgiev, V. and Asenov, A. (2020) Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform. Journal of Computational Electronics, (doi: 10.1007/s10825-020-01519-0) (Early Online Publication)

Adamu-Lema, F., Monzio Compagnoni, C., Badami, O., Georgiev, V. and Asenov, A. (2020) RTN and its intrinsic interaction with statistical variability sources in advanced nano-scale devices: a simulation study. In: Grasser, T. (ed.) Noise in Nanoscale Semiconductor Devices. Springer: Cham, pp. 441-466. ISBN 9783030374990 (doi:10.1007/978-3-030-37500-3_13)

2019

Duan, M. , Navarro, C., Cheng, B., Adamu-Lema, F., Wang, X., Georgiev, V.P. , Gamiz, F., Millar, C. and Asenov, A. (2019) Thorough understanding of retention time of Z2FET memory operation. IEEE Transactions on Electron Devices, 66(1), pp. 383-388. (doi: 10.1109/TED.2018.2877977)

2018

Lee, J., Badami, O., Carrillo-Nunez, H., Berrada, S., Medina-Bailon, C., Dutta, T., Adamu-Lema, F., Georgiev, V. P. and Asenov, A. (2018) Variability predictions for the next technology generations of n-type SixGe1-x nanowire MOSFETs. Micromachines, 9(12), 643. (doi: 10.3390/mi9120643)

Berrada, S., Dutta, T., Carrillo-Nunez, H., Duan, M. , Adamu-Lema, F., Lee, J., Georgiev, V. , Medina Bailon, C. and Asenov, A. (2018) NESS: new flexible Nano-Electronic Simulation Software. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 22-25. ISBN 9781538667910 (doi:10.1109/SISPAD.2018.8551701)

Berrada, S., Lee, J., Carrillo-Nunez, H., Medina Bailon, C., Adamu-Lema, F., Georgiev, V. and Asenov, A. (2018) Quantum Transport Investigation of Threshold Voltage Variability in Sub-10 nm JunctionlessSi Nanowire FETs. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 244-247. ISBN 9781538667910 (doi:10.1109/SISPAD.2018.8551638)

Carrillo-Nunez, H., Lee, J., Berrada, S., Medina-Bailon, C., Adamu-Lema, F., Luisier, M., Asenov, A. and Georgiev, V. P. (2018) Random dopant-induced variability in Si-InAs nanowire tunnel FETs: a quantum transport simulation study. IEEE Electron Device Letters, 39(9), pp. 1473-1476. (doi: 10.1109/LED.2018.2859586)

Lee, J. et al. (2018) Understanding electromigration in Cu-CNT composite interconnects: a multiscale electrothermal simulation study. IEEE Transactions on Electron Devices, 65(9), pp. 3884-3892. (doi: 10.1109/TED.2018.2853550)

Cristoloveanu, S. et al. (2018) A review of the Z²-FET 1T-DRAM memory: operation mechanisms and key parameters. Solid-State Electronics, 143, pp. 10-19. (doi: 10.1016/j.sse.2017.11.012)

Georgiev, V. P. , Dochioiu, A.-I., Adamu-Lema, F., Berrada, S., Mirza, M. M. , Paul, D. and Asenov, A. (2018) Variability Study of High Current Junctionless Silicon Nanowire Transistors. In: 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017, ISBN 9781538627723 (doi:10.1109/NMDC.2017.8350514)

2017

Navarro, C. et al. (2017) Z²-FET as capacitor-less eDRAM cell for high-density integration. IEEE Transactions on Electron Devices, 64(12), pp. 4904-4909. (doi: 10.1109/TED.2017.2759308)

Adamu-Lema, F., Duan, M. , Navarro, C., Georgiev, V. , Cheng, B., Wang, X., Millar, C., Gamiz, F. and Asenov, A. (2017) Simulation Based DC and Dynamic Behaviour Characterization of Z2FET. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, pp. 317-320. (doi:10.23919/SISPAD.2017.8085328)

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Does a Nanowire Transistor Follow the Golden Ratio? A 2D Poisson-Schrödinger/3D Monte Carlo Simulation Study. In: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan, 7-9 Sept 2017, (doi:10.23919/SISPAD.2017.8085263)

Duan, M. , Adamu-Lema, F., Cheng, B., Navarro, C., Wang, X., Georgiev, V.P. , Gamiz, F., Millar, C. and Asenov, A. (2017) 2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, pp. 325-328. (doi:10.23919/SISPAD.2017.8085330)

Wang, X., Georgiev, V. P. , Adamu-Lema, F., Gerrer, L., Amoroso, S. M. and Asenov, A. (2017) TCAD-based design technology co-optimization for variability in nanoscale SOI FinFETs. In: Deleonibus, S. (ed.) Integrated Nanodevice and Nanosystem Fabrication. Series: Pan Stanford series on intelligent nanosystems. Pan Stanford: Singapore, pp. 215-252. ISBN 9789814774222

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Simulation study of vertically stacked lateral Si nanowires transistors for 5 nm CMOS applications. IEEE Journal of the Electron Devices Society, 5(6), pp. 466-472. (doi: 10.1109/JEDS.2017.2752465)

Duan, M. et al. (2017) Interaction Between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction. In: 2017 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2-6 Apr 2017, XT5.1-XT5.7. (doi:10.1109/IRPS.2017.7936419)

Al-Ameri, T. , Georgiev, V. P. , Sadi, T., Wang, Y., Adamu-Lema, F., Wang, X., Amoroso, S. M., Towie, E., Brown, A. and Asenov, A. (2017) Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit. Solid-State Electronics, 129, pp. 73-80. (doi: 10.1016/j.sse.2016.12.015)

Adamu-Lema, F., Duan, M. , Berrada, S., Lee, J., Al-Ameri, T. , Georgiev, V. and Asenov, A. (2017) Modelling and simulation of advanced semiconductor devices. ECS Transactions, 80(4), pp. 33-42. (doi: 10.1149/08004.0033ecst)

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Position-Dependent Performance in 5 nm Vertically Stacked Lateral Si Nanowires Transistors. International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017.

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Variability-Aware Simulations of 5 nm Vertically Stacked Lateral Si Nanowires Transistors. International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017.

2016

Al-Ameri, T. , Georgiev, V. , Adamu-Lema, F. and Asenov, A. (2016) Influence of Quantum Confinement Effects and Device Electrostatic Driven Performance in Ultra-Scaled SixGe1-x Nanowire Transistors. In: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2016), Vienna, Austria, 25-27 Jan 2016, pp. 234-237. ISBN 9781467386104 (doi:10.1109/ULIS.2016.7440096)

2015

Georgiev, V. P. , Amoroso, S. M., Gerrer, L., Adamu-Lema, F. and Asenov, A. (2015) Interplay between quantum mechanical effects and a discrete trap position in ultrascaled FinFETs. In: SISPAD 2015: International Conference on Semiconductor Process and Device Simulations, Washington, DC, USA, 9-11 Sept 2015, pp. 246-249. ISBN 9781467378581 (doi:10.1109/SISPAD.2015.7292305)

Amoroso, S. M., Adamu-Lema, F., Brown, A. R. and Asenov, A. (2015) A mobility correction approach for overcoming artifacts in atomistic drift-diffusion simulation of nano-MOSFETs. IEEE Transactions on Electron Devices, 62(6), pp. 2056-2060. (doi: 10.1109/TED.2015.2419815)

Adamu-Lema, F., Wang, X., Amoroso, S.M., Gerrer, L., Millar, C. and Asenov, A. (2015) Comprehensive 'Atomistic' Simulation of Statistical Variability and Reliability in 14 nm Generation FinFETs. In: 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington D.C.,USA, 09-11 Sep 2015, pp. 157-160. ISBN 9781467378598

Al-Ameri, T. , Wang, Y., Georgiev, V.P. , Adamu-Lema, F., Wang, X. and Asenov, A. (2015) Correlation between Gate Length, Geometry and Electrostatic Driven Performance in Ultra-Scaled Silicon Nanowire Transistors. In: 10th IEEE Nanotechnology Materials and Devices Conference (NMDC), Anchorage, AK, USA, 13-16 Sep 2015, pp. 30-34. ISBN 9781467393621 (doi:10.1109/NMDC.2015.7439240)

2014

Adamu-Lema, F., Wang, X., Amoroso, S. M., Riddet, C., Cheng, B., Shifren, L., Aitken, R., Sinha, S., Yeric, G. and Asenov, A. (2014) Performance and variability of doped multithreshold FinFETs for 10-nm CMOS. IEEE Transactions on Electron Devices, 61(10), pp. 3372-3378. (doi: 10.1109/TED.2014.2346544)

Asenov, A. , Adamu-Lema, F., Wang, X. and Amoroso, S. M. (2014) Problems with the continuous doping TCAD simulations of decananometer CMOS transistors. IEEE Transactions on Electron Devices, 61(8), pp. 2745-2751. (doi: 10.1109/TED.2014.2332034)

Amoroso, S. M., Gerrer, L., Hussin, R., Adamu-Lema, F. and Asenov, A. (2014) Time-dependent 3-D statistical KMC simulation of reliability in nanoscale MOSFETs. IEEE Transactions on Electron Devices, 61(6), pp. 1956-1962. (doi: 10.1109/TED.2014.2318172)

Gerrer, L., Ding, J., Amoroso, S.M., Adamu-Lema, F., Hussin, R., Reid, D., Millar, C. and Asenov, A. (2014) Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: a review. Microelectronics Reliability, 54(4), pp. 682-697. (doi: 10.1016/j.microrel.2014.01.024)

Adamu-Lema, F., Amoroso, S.M., Wang, X., Cheng, B., Shifren, L., Aitken, R., Sinha, S., Yeric, G. and Asenov, A. (2014) The discrepancy between the uniform and variability aware atomistic TCAD simulations of decananometer bulk MOSFETs and FinFETs. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, 9-11 Sept. 2014, pp. 285-288. ISBN 9781479952878 (doi:10.1109/SISPAD.2014.6931619)

Asenov, A. , Cheng, B., Adamu-Lema, F., Shifren, L., Sinha, S., Ridet, C., Alexander, C. L., Brown, A. R., Wang, X. and Amoroso, S. M. (2014) Predictive simulation of future CMOS technologies and their impact on circuits. In: 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2014), Guilin, China, 28-31 Oct. 2014, pp. 1411-1414.

2013

Gerrer, L., Amoroso, S. M., Markov, S., Adamu-Lema, F. and Asenov, A. (2013) 3-D statistical simulation comparison of oxide reliability of planar MOSFETs and FinFET. IEEE Transactions on Electron Devices, 60(12), pp. 4008-4013. (doi: 10.1109/TED.2013.2285588)

Wang, X., Adamu-Lema, F., Cheng, B. and Asenov, A. (2013) Geometry, temperature, and body bias dependence of statistical variability in 20-nm bulk CMOS technology: a comprehensive simulation analysis. IEEE Transactions on Electron Devices, 60(5), pp. 1547-1554. (doi: 10.1109/TED.2013.2254490)

2011

Asenov, P., Adamu-Lema, F., Roy, S., Millar, C., Asenov, A. , Roy, G., Kovac, U. and Reid, D. (2011) The effect of compact modelling strategy on SNM and Read Current variability in Modern SRAM. In: 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan, 8-10 Sep 2011, pp. 283-286. ISBN 9781612844190 (doi:10.1109/SISPAD.2011.6035024)

2005

Cheng, B., Roy, S., Roy, G., Adamu-Lema, F. and Asenov, A. (2005) Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells. Solid-State Electronics, 49(5), pp. 740-746. (doi: 10.1016/j.sse.2004.09.005)

This list was generated on Tue Aug 11 03:41:44 2020 BST.
Number of items: 37.

Articles

Berrada, S., Carrillo-Nunez, H., Lee, J., Medina Bailon, C., Dutta, T., Badami, O., Adamu-Lema, F., Thirunavukkarasu, V., Georgiev, V. and Asenov, A. (2020) Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform. Journal of Computational Electronics, (doi: 10.1007/s10825-020-01519-0) (Early Online Publication)

Duan, M. , Navarro, C., Cheng, B., Adamu-Lema, F., Wang, X., Georgiev, V.P. , Gamiz, F., Millar, C. and Asenov, A. (2019) Thorough understanding of retention time of Z2FET memory operation. IEEE Transactions on Electron Devices, 66(1), pp. 383-388. (doi: 10.1109/TED.2018.2877977)

Lee, J., Badami, O., Carrillo-Nunez, H., Berrada, S., Medina-Bailon, C., Dutta, T., Adamu-Lema, F., Georgiev, V. P. and Asenov, A. (2018) Variability predictions for the next technology generations of n-type SixGe1-x nanowire MOSFETs. Micromachines, 9(12), 643. (doi: 10.3390/mi9120643)

Carrillo-Nunez, H., Lee, J., Berrada, S., Medina-Bailon, C., Adamu-Lema, F., Luisier, M., Asenov, A. and Georgiev, V. P. (2018) Random dopant-induced variability in Si-InAs nanowire tunnel FETs: a quantum transport simulation study. IEEE Electron Device Letters, 39(9), pp. 1473-1476. (doi: 10.1109/LED.2018.2859586)

Lee, J. et al. (2018) Understanding electromigration in Cu-CNT composite interconnects: a multiscale electrothermal simulation study. IEEE Transactions on Electron Devices, 65(9), pp. 3884-3892. (doi: 10.1109/TED.2018.2853550)

Cristoloveanu, S. et al. (2018) A review of the Z²-FET 1T-DRAM memory: operation mechanisms and key parameters. Solid-State Electronics, 143, pp. 10-19. (doi: 10.1016/j.sse.2017.11.012)

Navarro, C. et al. (2017) Z²-FET as capacitor-less eDRAM cell for high-density integration. IEEE Transactions on Electron Devices, 64(12), pp. 4904-4909. (doi: 10.1109/TED.2017.2759308)

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Simulation study of vertically stacked lateral Si nanowires transistors for 5 nm CMOS applications. IEEE Journal of the Electron Devices Society, 5(6), pp. 466-472. (doi: 10.1109/JEDS.2017.2752465)

Al-Ameri, T. , Georgiev, V. P. , Sadi, T., Wang, Y., Adamu-Lema, F., Wang, X., Amoroso, S. M., Towie, E., Brown, A. and Asenov, A. (2017) Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit. Solid-State Electronics, 129, pp. 73-80. (doi: 10.1016/j.sse.2016.12.015)

Adamu-Lema, F., Duan, M. , Berrada, S., Lee, J., Al-Ameri, T. , Georgiev, V. and Asenov, A. (2017) Modelling and simulation of advanced semiconductor devices. ECS Transactions, 80(4), pp. 33-42. (doi: 10.1149/08004.0033ecst)

Amoroso, S. M., Adamu-Lema, F., Brown, A. R. and Asenov, A. (2015) A mobility correction approach for overcoming artifacts in atomistic drift-diffusion simulation of nano-MOSFETs. IEEE Transactions on Electron Devices, 62(6), pp. 2056-2060. (doi: 10.1109/TED.2015.2419815)

Adamu-Lema, F., Wang, X., Amoroso, S. M., Riddet, C., Cheng, B., Shifren, L., Aitken, R., Sinha, S., Yeric, G. and Asenov, A. (2014) Performance and variability of doped multithreshold FinFETs for 10-nm CMOS. IEEE Transactions on Electron Devices, 61(10), pp. 3372-3378. (doi: 10.1109/TED.2014.2346544)

Asenov, A. , Adamu-Lema, F., Wang, X. and Amoroso, S. M. (2014) Problems with the continuous doping TCAD simulations of decananometer CMOS transistors. IEEE Transactions on Electron Devices, 61(8), pp. 2745-2751. (doi: 10.1109/TED.2014.2332034)

Amoroso, S. M., Gerrer, L., Hussin, R., Adamu-Lema, F. and Asenov, A. (2014) Time-dependent 3-D statistical KMC simulation of reliability in nanoscale MOSFETs. IEEE Transactions on Electron Devices, 61(6), pp. 1956-1962. (doi: 10.1109/TED.2014.2318172)

Gerrer, L., Ding, J., Amoroso, S.M., Adamu-Lema, F., Hussin, R., Reid, D., Millar, C. and Asenov, A. (2014) Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: a review. Microelectronics Reliability, 54(4), pp. 682-697. (doi: 10.1016/j.microrel.2014.01.024)

Gerrer, L., Amoroso, S. M., Markov, S., Adamu-Lema, F. and Asenov, A. (2013) 3-D statistical simulation comparison of oxide reliability of planar MOSFETs and FinFET. IEEE Transactions on Electron Devices, 60(12), pp. 4008-4013. (doi: 10.1109/TED.2013.2285588)

Wang, X., Adamu-Lema, F., Cheng, B. and Asenov, A. (2013) Geometry, temperature, and body bias dependence of statistical variability in 20-nm bulk CMOS technology: a comprehensive simulation analysis. IEEE Transactions on Electron Devices, 60(5), pp. 1547-1554. (doi: 10.1109/TED.2013.2254490)

Cheng, B., Roy, S., Roy, G., Adamu-Lema, F. and Asenov, A. (2005) Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells. Solid-State Electronics, 49(5), pp. 740-746. (doi: 10.1016/j.sse.2004.09.005)

Book Sections

Adamu-Lema, F., Monzio Compagnoni, C., Badami, O., Georgiev, V. and Asenov, A. (2020) RTN and its intrinsic interaction with statistical variability sources in advanced nano-scale devices: a simulation study. In: Grasser, T. (ed.) Noise in Nanoscale Semiconductor Devices. Springer: Cham, pp. 441-466. ISBN 9783030374990 (doi:10.1007/978-3-030-37500-3_13)

Wang, X., Georgiev, V. P. , Adamu-Lema, F., Gerrer, L., Amoroso, S. M. and Asenov, A. (2017) TCAD-based design technology co-optimization for variability in nanoscale SOI FinFETs. In: Deleonibus, S. (ed.) Integrated Nanodevice and Nanosystem Fabrication. Series: Pan Stanford series on intelligent nanosystems. Pan Stanford: Singapore, pp. 215-252. ISBN 9789814774222

Conference or Workshop Item

Xeni, N., Ghannam, R. , Georgiev, V. , Adamu-Lema, F., Badami, O. and Asenov, A. (2020) The Use of TCAD Simulations in Semiconductor Devices Teaching. Transnational Engineering Education Using Technology Workshop (TREET 2020), Glasgow, UK, 31 Jul 2020. (Accepted for Publication)

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Position-Dependent Performance in 5 nm Vertically Stacked Lateral Si Nanowires Transistors. International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017.

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Variability-Aware Simulations of 5 nm Vertically Stacked Lateral Si Nanowires Transistors. International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017.

Conference Proceedings

Berrada, S., Dutta, T., Carrillo-Nunez, H., Duan, M. , Adamu-Lema, F., Lee, J., Georgiev, V. , Medina Bailon, C. and Asenov, A. (2018) NESS: new flexible Nano-Electronic Simulation Software. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 22-25. ISBN 9781538667910 (doi:10.1109/SISPAD.2018.8551701)

Berrada, S., Lee, J., Carrillo-Nunez, H., Medina Bailon, C., Adamu-Lema, F., Georgiev, V. and Asenov, A. (2018) Quantum Transport Investigation of Threshold Voltage Variability in Sub-10 nm JunctionlessSi Nanowire FETs. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 244-247. ISBN 9781538667910 (doi:10.1109/SISPAD.2018.8551638)

Georgiev, V. P. , Dochioiu, A.-I., Adamu-Lema, F., Berrada, S., Mirza, M. M. , Paul, D. and Asenov, A. (2018) Variability Study of High Current Junctionless Silicon Nanowire Transistors. In: 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017, ISBN 9781538627723 (doi:10.1109/NMDC.2017.8350514)

Adamu-Lema, F., Duan, M. , Navarro, C., Georgiev, V. , Cheng, B., Wang, X., Millar, C., Gamiz, F. and Asenov, A. (2017) Simulation Based DC and Dynamic Behaviour Characterization of Z2FET. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, pp. 317-320. (doi:10.23919/SISPAD.2017.8085328)

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Does a Nanowire Transistor Follow the Golden Ratio? A 2D Poisson-Schrödinger/3D Monte Carlo Simulation Study. In: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan, 7-9 Sept 2017, (doi:10.23919/SISPAD.2017.8085263)

Duan, M. , Adamu-Lema, F., Cheng, B., Navarro, C., Wang, X., Georgiev, V.P. , Gamiz, F., Millar, C. and Asenov, A. (2017) 2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, pp. 325-328. (doi:10.23919/SISPAD.2017.8085330)

Duan, M. et al. (2017) Interaction Between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction. In: 2017 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2-6 Apr 2017, XT5.1-XT5.7. (doi:10.1109/IRPS.2017.7936419)

Al-Ameri, T. , Georgiev, V. , Adamu-Lema, F. and Asenov, A. (2016) Influence of Quantum Confinement Effects and Device Electrostatic Driven Performance in Ultra-Scaled SixGe1-x Nanowire Transistors. In: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2016), Vienna, Austria, 25-27 Jan 2016, pp. 234-237. ISBN 9781467386104 (doi:10.1109/ULIS.2016.7440096)

Georgiev, V. P. , Amoroso, S. M., Gerrer, L., Adamu-Lema, F. and Asenov, A. (2015) Interplay between quantum mechanical effects and a discrete trap position in ultrascaled FinFETs. In: SISPAD 2015: International Conference on Semiconductor Process and Device Simulations, Washington, DC, USA, 9-11 Sept 2015, pp. 246-249. ISBN 9781467378581 (doi:10.1109/SISPAD.2015.7292305)

Adamu-Lema, F., Wang, X., Amoroso, S.M., Gerrer, L., Millar, C. and Asenov, A. (2015) Comprehensive 'Atomistic' Simulation of Statistical Variability and Reliability in 14 nm Generation FinFETs. In: 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington D.C.,USA, 09-11 Sep 2015, pp. 157-160. ISBN 9781467378598

Al-Ameri, T. , Wang, Y., Georgiev, V.P. , Adamu-Lema, F., Wang, X. and Asenov, A. (2015) Correlation between Gate Length, Geometry and Electrostatic Driven Performance in Ultra-Scaled Silicon Nanowire Transistors. In: 10th IEEE Nanotechnology Materials and Devices Conference (NMDC), Anchorage, AK, USA, 13-16 Sep 2015, pp. 30-34. ISBN 9781467393621 (doi:10.1109/NMDC.2015.7439240)

Adamu-Lema, F., Amoroso, S.M., Wang, X., Cheng, B., Shifren, L., Aitken, R., Sinha, S., Yeric, G. and Asenov, A. (2014) The discrepancy between the uniform and variability aware atomistic TCAD simulations of decananometer bulk MOSFETs and FinFETs. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, 9-11 Sept. 2014, pp. 285-288. ISBN 9781479952878 (doi:10.1109/SISPAD.2014.6931619)

Asenov, A. , Cheng, B., Adamu-Lema, F., Shifren, L., Sinha, S., Ridet, C., Alexander, C. L., Brown, A. R., Wang, X. and Amoroso, S. M. (2014) Predictive simulation of future CMOS technologies and their impact on circuits. In: 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2014), Guilin, China, 28-31 Oct. 2014, pp. 1411-1414.

Asenov, P., Adamu-Lema, F., Roy, S., Millar, C., Asenov, A. , Roy, G., Kovac, U. and Reid, D. (2011) The effect of compact modelling strategy on SNM and Read Current variability in Modern SRAM. In: 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan, 8-10 Sep 2011, pp. 283-286. ISBN 9781612844190 (doi:10.1109/SISPAD.2011.6035024)

This list was generated on Tue Aug 11 03:41:44 2020 BST.