Dr Fikru Adamu-Lema

  • Research Associate (Electronic and Nanoscale Engineering)

telephone: 01413304792
email: Fikru.Adamu-Lema@glasgow.ac.uk

Publications

List by: Type | Date

Jump to: 2017 | 2016 | 2015 | 2014 | 2013 | 2011 | 2005
Number of items: 25.

2017

Navarro, C. et al. (2017) Z²-FET as capacitor-less eDRAM cell for high-density integration. IEEE Transactions on Electron Devices, (doi:10.1109/TED.2017.2759308) (Early Online Publication)

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Does a Nanowire Transistor Follow the Golden Ratio? A 2D Poisson-Schrödinger/3D Monte Carlo Simulation Study. In: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan, 7-9 Sept 2017, (doi:10.23919/SISPAD.2017.8085263)

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Simulation study of vertically stacked lateral Si nanowires transistors for 5 nm CMOS applications. IEEE Journal of the Electron Devices Society, 5(6), pp. 466-472. (doi:10.1109/JEDS.2017.2752465)

Duan, M. et al. (2017) Interaction Between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction. In: 2017 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2-6 Apr 2017, XT5.1-XT5.7. (doi:10.1109/IRPS.2017.7936419)

Al-Ameri, T. , Georgiev, V. P. , Sadi, T., Wang, Y., Adamu-Lema, F., Wang, X., Amoroso, S. M., Towie, E., Brown, A. and Asenov, A. (2017) Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit. Solid-State Electronics, 129, pp. 73-80. (doi:10.1016/j.sse.2016.12.015)

Adamu-Lema, F., Duan, M. , Navarro, C., Georgiev, V. , Cheng, B., Wang, X., Millar, C., Gamiz, F. and Asenov, A. (2017) Simulation Based DC and Dynamic Behaviour Characterization of Z2FET. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, (In Press)

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Position-Dependent Performance in 5 nm Vertically Stacked Lateral Si Nanowires Transistors. International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017.

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Variability-Aware Simulations of 5 nm Vertically Stacked Lateral Si Nanowires Transistors. International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017.

Duan, M. , Adamu-Lema, F., Cheng, B., Navarro, C., Wang, X., Georgiev, V. , Gamiz, F., Millar, C. and Asenov, A. (2017) 2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, (In Press)

Wang, X., Georgiev, V. P. , Adamu-Lema, F., Gerrer, L., Amoroso, S. M. and Asenov, A. (2017) TCAD-based design technology co-optimization for variability in nanoscale SOI FinFETs. In: Deleonibus, S. (ed.) Integrated Nanodevice and Nanosystem Fabrication. Series: Pan Stanford series on intelligent nanosystems. Routledge. ISBN 9789814774222 (In Press)

2016

Al-Ameri, T. , Georgiev, V. , Adamu-Lema, F. and Asenov, A. (2016) Influence of Quantum Confinement Effects and Device Electrostatic Driven Performance in Ultra-Scaled SixGe1-x Nanowire Transistors. In: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2016), Vienna, Austria, 25-27 Jan 2016, pp. 234-237. ISBN 9781467386104 (doi:10.1109/ULIS.2016.7440096)

2015

Georgiev, V. P. , Amoroso, S. M., Gerrer, L., Adamu-Lema, F. and Asenov, A. (2015) Interplay between quantum mechanical effects and a discrete trap position in ultrascaled FinFETs. In: SISPAD 2015: International Conference on Semiconductor Process and Device Simulations, Washington, DC, USA, 9-11 Sept 2015, pp. 246-249. ISBN 9781467378581 (doi:10.1109/SISPAD.2015.7292305)

Amoroso, S. M., Adamu-Lema, F., Brown, A. R. and Asenov, A. (2015) A mobility correction approach for overcoming artifacts in atomistic drift-diffusion simulation of nano-MOSFETs. IEEE Transactions on Electron Devices, 62(6), pp. 2056-2060. (doi:10.1109/TED.2015.2419815)

Adamu-Lema, F., Wang, X., Amoroso, S.M., Gerrer, L., Millar, C. and Asenov, A. (2015) Comprehensive 'Atomistic' Simulation of Statistical Variability and Reliability in 14 nm Generation FinFETs. In: 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington D.C.,USA, 09-11 Sep 2015, pp. 157-160. ISBN 9781467378598

Al-Ameri, T. , Wang, Y., Georgiev, V.P., Adamu-Lema, F., Wang, X. and Asenov, A. (2015) Correlation between Gate Length, Geometry and Electrostatic Driven Performance in Ultra-Scaled Silicon Nanowire Transistors. In: 10th IEEE Nanotechnology Materials and Devices Conference (NMDC), Anchorage, AK, USA, 13-16 Sep 2015, pp. 30-34. ISBN 9781467393621 (doi:10.1109/NMDC.2015.7439240)

2014

Adamu-Lema, F., Wang, X., Amoroso, S. M., Riddet, C., Cheng, B., Shifren, L., Aitken, R., Sinha, S., Yeric, G. and Asenov, A. (2014) Performance and variability of doped multithreshold FinFETs for 10-nm CMOS. IEEE Transactions on Electron Devices, 61(10), pp. 3372-3378. (doi:10.1109/TED.2014.2346544)

Asenov, A., Adamu-Lema, F., Wang, X. and Amoroso, S. M. (2014) Problems with the continuous doping TCAD simulations of decananometer CMOS transistors. IEEE Transactions on Electron Devices, 61(8), pp. 2745-2751. (doi:10.1109/TED.2014.2332034)

Amoroso, S. M., Gerrer, L., Hussin, R., Adamu-Lema, F. and Asenov, A. (2014) Time-dependent 3-D statistical KMC simulation of reliability in nanoscale MOSFETs. IEEE Transactions on Electron Devices, 61(6), pp. 1956-1962. (doi:10.1109/TED.2014.2318172)

Gerrer, L., Ding, J., Amoroso, S.M., Adamu-Lema, F., Hussin, R., Reid, D., Millar, C. and Asenov, A. (2014) Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: a review. Microelectronics Reliability, 54(4), pp. 682-697. (doi:10.1016/j.microrel.2014.01.024)

Adamu-Lema, F., Amoroso, S.M., Wang, X., Cheng, B., Shifren, L., Aitken, R., Sinha, S., Yeric, G. and Asenov, A. (2014) The discrepancy between the uniform and variability aware atomistic TCAD simulations of decananometer bulk MOSFETs and FinFETs. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, 9-11 Sept. 2014, pp. 285-288. ISBN 9781479952878 (doi:10.1109/SISPAD.2014.6931619)

Asenov, A., Cheng, B., Adamu-Lema, F., Shifren, L., Sinha, S., Ridet, C., Alexander, C. L., Brown, A. R., Wang, X. and Amoroso, S. M. (2014) Predictive simulation of future CMOS technologies and their impact on circuits. In: 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2014), Guilin, China, 28-31 Oct. 2014, pp. 1411-1414.

2013

Gerrer, L., Amoroso, S. M., Markov, S., Adamu-Lema, F. and Asenov, A. (2013) 3-D statistical simulation comparison of oxide reliability of planar MOSFETs and FinFET. IEEE Transactions on Electron Devices, 60(12), pp. 4008-4013. (doi:10.1109/TED.2013.2285588)

Wang, X., Adamu-Lema, F., Cheng, B. and Asenov, A. (2013) Geometry, temperature, and body bias dependence of statistical variability in 20-nm bulk CMOS technology: a comprehensive simulation analysis. IEEE Transactions on Electron Devices, 60(5), pp. 1547-1554. (doi:10.1109/TED.2013.2254490)

2011

Asenov, P., Adamu-Lema, F., Roy, S., Millar, C., Asenov, A., Roy, G., Kovac, U. and Reid, D. (2011) The effect of compact modelling strategy on SNM and Read Current variability in Modern SRAM. In: 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan, 8-10 Sep 2011, pp. 283-286. ISBN 9781612844190 (doi:10.1109/SISPAD.2011.6035024)

2005

Cheng, B., Roy, S., Roy, G., Adamu-Lema, F. and Asenov, A. (2005) Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells. Solid-State Electronics, 49(5), pp. 740-746. (doi:10.1016/j.sse.2004.09.005)

This list was generated on Sat Nov 18 01:02:50 2017 GMT.
Number of items: 25.

Articles

Navarro, C. et al. (2017) Z²-FET as capacitor-less eDRAM cell for high-density integration. IEEE Transactions on Electron Devices, (doi:10.1109/TED.2017.2759308) (Early Online Publication)

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Simulation study of vertically stacked lateral Si nanowires transistors for 5 nm CMOS applications. IEEE Journal of the Electron Devices Society, 5(6), pp. 466-472. (doi:10.1109/JEDS.2017.2752465)

Al-Ameri, T. , Georgiev, V. P. , Sadi, T., Wang, Y., Adamu-Lema, F., Wang, X., Amoroso, S. M., Towie, E., Brown, A. and Asenov, A. (2017) Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit. Solid-State Electronics, 129, pp. 73-80. (doi:10.1016/j.sse.2016.12.015)

Amoroso, S. M., Adamu-Lema, F., Brown, A. R. and Asenov, A. (2015) A mobility correction approach for overcoming artifacts in atomistic drift-diffusion simulation of nano-MOSFETs. IEEE Transactions on Electron Devices, 62(6), pp. 2056-2060. (doi:10.1109/TED.2015.2419815)

Adamu-Lema, F., Wang, X., Amoroso, S. M., Riddet, C., Cheng, B., Shifren, L., Aitken, R., Sinha, S., Yeric, G. and Asenov, A. (2014) Performance and variability of doped multithreshold FinFETs for 10-nm CMOS. IEEE Transactions on Electron Devices, 61(10), pp. 3372-3378. (doi:10.1109/TED.2014.2346544)

Asenov, A., Adamu-Lema, F., Wang, X. and Amoroso, S. M. (2014) Problems with the continuous doping TCAD simulations of decananometer CMOS transistors. IEEE Transactions on Electron Devices, 61(8), pp. 2745-2751. (doi:10.1109/TED.2014.2332034)

Amoroso, S. M., Gerrer, L., Hussin, R., Adamu-Lema, F. and Asenov, A. (2014) Time-dependent 3-D statistical KMC simulation of reliability in nanoscale MOSFETs. IEEE Transactions on Electron Devices, 61(6), pp. 1956-1962. (doi:10.1109/TED.2014.2318172)

Gerrer, L., Ding, J., Amoroso, S.M., Adamu-Lema, F., Hussin, R., Reid, D., Millar, C. and Asenov, A. (2014) Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: a review. Microelectronics Reliability, 54(4), pp. 682-697. (doi:10.1016/j.microrel.2014.01.024)

Gerrer, L., Amoroso, S. M., Markov, S., Adamu-Lema, F. and Asenov, A. (2013) 3-D statistical simulation comparison of oxide reliability of planar MOSFETs and FinFET. IEEE Transactions on Electron Devices, 60(12), pp. 4008-4013. (doi:10.1109/TED.2013.2285588)

Wang, X., Adamu-Lema, F., Cheng, B. and Asenov, A. (2013) Geometry, temperature, and body bias dependence of statistical variability in 20-nm bulk CMOS technology: a comprehensive simulation analysis. IEEE Transactions on Electron Devices, 60(5), pp. 1547-1554. (doi:10.1109/TED.2013.2254490)

Cheng, B., Roy, S., Roy, G., Adamu-Lema, F. and Asenov, A. (2005) Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells. Solid-State Electronics, 49(5), pp. 740-746. (doi:10.1016/j.sse.2004.09.005)

Book Sections

Wang, X., Georgiev, V. P. , Adamu-Lema, F., Gerrer, L., Amoroso, S. M. and Asenov, A. (2017) TCAD-based design technology co-optimization for variability in nanoscale SOI FinFETs. In: Deleonibus, S. (ed.) Integrated Nanodevice and Nanosystem Fabrication. Series: Pan Stanford series on intelligent nanosystems. Routledge. ISBN 9789814774222 (In Press)

Conference or Workshop Item

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Position-Dependent Performance in 5 nm Vertically Stacked Lateral Si Nanowires Transistors. International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017.

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Variability-Aware Simulations of 5 nm Vertically Stacked Lateral Si Nanowires Transistors. International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June 2017.

Conference Proceedings

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Does a Nanowire Transistor Follow the Golden Ratio? A 2D Poisson-Schrödinger/3D Monte Carlo Simulation Study. In: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan, 7-9 Sept 2017, (doi:10.23919/SISPAD.2017.8085263)

Duan, M. et al. (2017) Interaction Between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction. In: 2017 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2-6 Apr 2017, XT5.1-XT5.7. (doi:10.1109/IRPS.2017.7936419)

Adamu-Lema, F., Duan, M. , Navarro, C., Georgiev, V. , Cheng, B., Wang, X., Millar, C., Gamiz, F. and Asenov, A. (2017) Simulation Based DC and Dynamic Behaviour Characterization of Z2FET. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, (In Press)

Duan, M. , Adamu-Lema, F., Cheng, B., Navarro, C., Wang, X., Georgiev, V. , Gamiz, F., Millar, C. and Asenov, A. (2017) 2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, (In Press)

Al-Ameri, T. , Georgiev, V. , Adamu-Lema, F. and Asenov, A. (2016) Influence of Quantum Confinement Effects and Device Electrostatic Driven Performance in Ultra-Scaled SixGe1-x Nanowire Transistors. In: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2016), Vienna, Austria, 25-27 Jan 2016, pp. 234-237. ISBN 9781467386104 (doi:10.1109/ULIS.2016.7440096)

Georgiev, V. P. , Amoroso, S. M., Gerrer, L., Adamu-Lema, F. and Asenov, A. (2015) Interplay between quantum mechanical effects and a discrete trap position in ultrascaled FinFETs. In: SISPAD 2015: International Conference on Semiconductor Process and Device Simulations, Washington, DC, USA, 9-11 Sept 2015, pp. 246-249. ISBN 9781467378581 (doi:10.1109/SISPAD.2015.7292305)

Adamu-Lema, F., Wang, X., Amoroso, S.M., Gerrer, L., Millar, C. and Asenov, A. (2015) Comprehensive 'Atomistic' Simulation of Statistical Variability and Reliability in 14 nm Generation FinFETs. In: 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington D.C.,USA, 09-11 Sep 2015, pp. 157-160. ISBN 9781467378598

Al-Ameri, T. , Wang, Y., Georgiev, V.P., Adamu-Lema, F., Wang, X. and Asenov, A. (2015) Correlation between Gate Length, Geometry and Electrostatic Driven Performance in Ultra-Scaled Silicon Nanowire Transistors. In: 10th IEEE Nanotechnology Materials and Devices Conference (NMDC), Anchorage, AK, USA, 13-16 Sep 2015, pp. 30-34. ISBN 9781467393621 (doi:10.1109/NMDC.2015.7439240)

Adamu-Lema, F., Amoroso, S.M., Wang, X., Cheng, B., Shifren, L., Aitken, R., Sinha, S., Yeric, G. and Asenov, A. (2014) The discrepancy between the uniform and variability aware atomistic TCAD simulations of decananometer bulk MOSFETs and FinFETs. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, 9-11 Sept. 2014, pp. 285-288. ISBN 9781479952878 (doi:10.1109/SISPAD.2014.6931619)

Asenov, A., Cheng, B., Adamu-Lema, F., Shifren, L., Sinha, S., Ridet, C., Alexander, C. L., Brown, A. R., Wang, X. and Amoroso, S. M. (2014) Predictive simulation of future CMOS technologies and their impact on circuits. In: 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2014), Guilin, China, 28-31 Oct. 2014, pp. 1411-1414.

Asenov, P., Adamu-Lema, F., Roy, S., Millar, C., Asenov, A., Roy, G., Kovac, U. and Reid, D. (2011) The effect of compact modelling strategy on SNM and Read Current variability in Modern SRAM. In: 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan, 8-10 Sep 2011, pp. 283-286. ISBN 9781612844190 (doi:10.1109/SISPAD.2011.6035024)

This list was generated on Sat Nov 18 01:02:50 2017 GMT.