Miss Dilini Hemakumara

  • Research Assistant (Electronic & Nanoscale Engineering)

Publications

List by: Type | Date

Jump to: 2018 | 2017 | 2016 | 2015
Number of items: 16.

2018

Morozov, D. , Doyle, S. M., Banerjee, A., Brien, T. L.R., Hemakumara, D., Thayne, I. G., Wood, K. and Hadfield, R. H. (2018) Design and characterisation of titanium nitride sub-arrays of kinetic inductance detectors for passive terahertz imaging. Journal of Low Temperature Physics, 193(3-4), pp. 196-202. (doi:10.1007/s10909-018-2023-z)

Banerjee, A., Heath, R. M. , Morozov, D. , Hemakumara, D., Nasti, U., Thayne, I. and Hadfield, R. H. (2018) Optical properties of refractory metal based thin films. Optical Materials Express, 8(8), pp. 2072-2088. (doi:10.1364/OME.8.002072)

Li, X. , Zhou, H., Hemakumara, D., Cho, S.-J., Floros, K., Moran, D. and Thayne, I. (2018) A Study of In-Situ Auger Spectroscopic Surface Analysis in Development of Atomic Layer Etch for GaN/AlGaN Based Power Device Fabrication. 10th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 11th International Conference on Plasma-Nano Technology & Science (ISPlasma2018 / IC-PLANTS2018), Nagoya, Japan, 4-8 March 2018.

Li, X. , Cho, S.-J., Floros, K., Hemakumara, D., Zhou, H., Guiney, I., Moran, D., Humphreys, C. and Thayne, I.G. (2018) In-situ Auger Spectroscopy Analysis of an Atomic Layer Etching Process for GaN/AlGaN-based Power Device Fabrication. UKNC Winter Conference 2018, Manchester, UK, 10-11 Jan 2018.

Li, X. , Zhou, H., Flores, K., Cho, S.-J., Hemakumara, D., Moran, D. and Thayne, I. (2018) Optimization of Atomic Layer Etch Process for Fabrication of Dual Barrier GaN-Based Power Device Using In-Situ Auger Spectrometric Surface Analysis. AVS 18th International Conference on Atomic Layer Deposition (ALD 2018) and the 5th International Atomic Layer Etching Workshop (ALE 2018), Incheon, South Korea, 29 Jul-1 Aug 2018.

2017

Hemakumara, D., Li, X. , Floros, K., Cho, S., Guiney, I., Moran, D., Humphreys, C., O'Mahony, A., Knoops, H. and Thayne, I. G. (2017) 4x Reduction in Gan MOSCAP Flatband Voltage Hysteresis with an In-situ Deposited Sin Cap and Device Processing in a Cluster Tool. 12th International Conference on Nitride Semiconductors, Strasbourg, France, 24-28 July 2017.

Hemakumara, D., Li, X. , Cho, S., Floros, K., Guiney, I., Moran, D., Humphreys, C., O'Mahony, A., Knoops, H. and Thayne, I.G. (2017) The Impact on GaN MOS Capacitor Performance of In‐situ Processing in a Clustered ALD/ICP/RIE Tool. AVS 17th International Conference on Atomic Layer Deposition (ALD 2017) featuring the 4th International Atomic Layer Etching Workshop (ALE 2017), Denver, CO, USA, 15-18 Jul 2017.

Li, X. et al. (2017) Atomic layer etch processes developed in an ICP/RIE etching system for etching III-V compound semiconductor materials. AVS 17th International Conference on Atomic Layer Deposition (ALD 2017) featuring the 4th International Atomic Layer Etching Workshop (ALE 2017), Denver, CO, USA, 15-18 Jul 2017.

Fu, Y.-C., Li, X. , Peralagu, U. , Hemakumara, D., Millar, D. A.J., Steer, M. and Thayne, I. G. (2017) Scaled HfO2/In0.53Ga0.47As MOSCAPs via Inserting TiN Caping Layer for III-V Low Power Device Application. UK Semiconductors 2017, Sheffield, UK, 12-13 July 2017.

Li, X. , Floros, K., Cho, S.-J., Hemakumara, D., Moran, D. and Thayne, I. (2017) Damage to Algan/Gan Power Device Materials from Cl2 and Ar Plasma Based Atomic Layer Etching and its Elimilation via a Low Temperature Rapid Thermal Annealing. 9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 10th International Conference on Plasma-Nano Technology & Science (ISPlasma2017 / IC-PLANTS2017), Aichi, Japan, 1-5 March 2017.

2016

Li, X. , Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) An Hbr/Ar Atomic Layer Etch Process for Precision Gate Recess Etching of Gan-Based Transistors. UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016.

Floros, K., Li, X. , Guiney, I., Cho, S.-J., Ternent, G., Hemakumara, D., Wasige, E. , Moran, D.A.J., Humphries, C.J. and Thayne, I.G. (2016) A Dual Barrier InAlN/AlGaN/GaN HEMT on Si Substrate with Pt Based Gates. In: 9th International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016, (Unpublished)

Floros, K. et al. (2016) Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

Li, X. , Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. In: UK Semiconductor Conference, Sheffield, UK, 6-7 July 2016, (Unpublished)

Li, X. , Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. 42nd International Conference on Micro and Nano Engineering (MNE 2016), Vienna, Austria, 19-23 Sept 2016. (Unpublished)

2015

Li, X. , Floros, K., Hemakumara, D., Moran, D. and Thayne, I. G. (2015) Realisation of Low Annealing Temperature and Low Resistance Ohmic Contacts forAlGaN/GaN-Based Power Devices Via SiH4 Inductively Coupled Plasma Treatment. In: UK Semiconductor Conference, Sheffield, UK, 1-2 July 2015,

This list was generated on Thu Dec 13 20:20:57 2018 GMT.
Number of items: 16.

Articles

Morozov, D. , Doyle, S. M., Banerjee, A., Brien, T. L.R., Hemakumara, D., Thayne, I. G., Wood, K. and Hadfield, R. H. (2018) Design and characterisation of titanium nitride sub-arrays of kinetic inductance detectors for passive terahertz imaging. Journal of Low Temperature Physics, 193(3-4), pp. 196-202. (doi:10.1007/s10909-018-2023-z)

Banerjee, A., Heath, R. M. , Morozov, D. , Hemakumara, D., Nasti, U., Thayne, I. and Hadfield, R. H. (2018) Optical properties of refractory metal based thin films. Optical Materials Express, 8(8), pp. 2072-2088. (doi:10.1364/OME.8.002072)

Conference or Workshop Item

Li, X. , Zhou, H., Hemakumara, D., Cho, S.-J., Floros, K., Moran, D. and Thayne, I. (2018) A Study of In-Situ Auger Spectroscopic Surface Analysis in Development of Atomic Layer Etch for GaN/AlGaN Based Power Device Fabrication. 10th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 11th International Conference on Plasma-Nano Technology & Science (ISPlasma2018 / IC-PLANTS2018), Nagoya, Japan, 4-8 March 2018.

Li, X. , Cho, S.-J., Floros, K., Hemakumara, D., Zhou, H., Guiney, I., Moran, D., Humphreys, C. and Thayne, I.G. (2018) In-situ Auger Spectroscopy Analysis of an Atomic Layer Etching Process for GaN/AlGaN-based Power Device Fabrication. UKNC Winter Conference 2018, Manchester, UK, 10-11 Jan 2018.

Li, X. , Zhou, H., Flores, K., Cho, S.-J., Hemakumara, D., Moran, D. and Thayne, I. (2018) Optimization of Atomic Layer Etch Process for Fabrication of Dual Barrier GaN-Based Power Device Using In-Situ Auger Spectrometric Surface Analysis. AVS 18th International Conference on Atomic Layer Deposition (ALD 2018) and the 5th International Atomic Layer Etching Workshop (ALE 2018), Incheon, South Korea, 29 Jul-1 Aug 2018.

Hemakumara, D., Li, X. , Floros, K., Cho, S., Guiney, I., Moran, D., Humphreys, C., O'Mahony, A., Knoops, H. and Thayne, I. G. (2017) 4x Reduction in Gan MOSCAP Flatband Voltage Hysteresis with an In-situ Deposited Sin Cap and Device Processing in a Cluster Tool. 12th International Conference on Nitride Semiconductors, Strasbourg, France, 24-28 July 2017.

Hemakumara, D., Li, X. , Cho, S., Floros, K., Guiney, I., Moran, D., Humphreys, C., O'Mahony, A., Knoops, H. and Thayne, I.G. (2017) The Impact on GaN MOS Capacitor Performance of In‐situ Processing in a Clustered ALD/ICP/RIE Tool. AVS 17th International Conference on Atomic Layer Deposition (ALD 2017) featuring the 4th International Atomic Layer Etching Workshop (ALE 2017), Denver, CO, USA, 15-18 Jul 2017.

Li, X. et al. (2017) Atomic layer etch processes developed in an ICP/RIE etching system for etching III-V compound semiconductor materials. AVS 17th International Conference on Atomic Layer Deposition (ALD 2017) featuring the 4th International Atomic Layer Etching Workshop (ALE 2017), Denver, CO, USA, 15-18 Jul 2017.

Fu, Y.-C., Li, X. , Peralagu, U. , Hemakumara, D., Millar, D. A.J., Steer, M. and Thayne, I. G. (2017) Scaled HfO2/In0.53Ga0.47As MOSCAPs via Inserting TiN Caping Layer for III-V Low Power Device Application. UK Semiconductors 2017, Sheffield, UK, 12-13 July 2017.

Li, X. , Floros, K., Cho, S.-J., Hemakumara, D., Moran, D. and Thayne, I. (2017) Damage to Algan/Gan Power Device Materials from Cl2 and Ar Plasma Based Atomic Layer Etching and its Elimilation via a Low Temperature Rapid Thermal Annealing. 9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 10th International Conference on Plasma-Nano Technology & Science (ISPlasma2017 / IC-PLANTS2017), Aichi, Japan, 1-5 March 2017.

Li, X. , Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) An Hbr/Ar Atomic Layer Etch Process for Precision Gate Recess Etching of Gan-Based Transistors. UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016.

Li, X. , Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. 42nd International Conference on Micro and Nano Engineering (MNE 2016), Vienna, Austria, 19-23 Sept 2016. (Unpublished)

Conference Proceedings

Floros, K., Li, X. , Guiney, I., Cho, S.-J., Ternent, G., Hemakumara, D., Wasige, E. , Moran, D.A.J., Humphries, C.J. and Thayne, I.G. (2016) A Dual Barrier InAlN/AlGaN/GaN HEMT on Si Substrate with Pt Based Gates. In: 9th International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016, (Unpublished)

Floros, K. et al. (2016) Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

Li, X. , Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. In: UK Semiconductor Conference, Sheffield, UK, 6-7 July 2016, (Unpublished)

Li, X. , Floros, K., Hemakumara, D., Moran, D. and Thayne, I. G. (2015) Realisation of Low Annealing Temperature and Low Resistance Ohmic Contacts forAlGaN/GaN-Based Power Devices Via SiH4 Inductively Coupled Plasma Treatment. In: UK Semiconductor Conference, Sheffield, UK, 1-2 July 2015,

This list was generated on Thu Dec 13 20:20:57 2018 GMT.