Miss Dilini Hemakumara

  • Research Assistant (Electronic and Nanoscale Engineering)

Publications

List by: Type | Date

Jump to: 2018 | 2016 | 2015
Number of items: 7.

2018

Morozov, D. , Doyle, S. M., Banerjee, A., Brien, T. L.R., Hemakumara, D., Thayne, I. G., Wood, K. and Hadfield, R. H. (2018) Design and characterisation of titanium nitride sub-arrays of kinetic inductance detectors for passive terahertz imaging. Journal of Low Temperature Physics, (doi:10.1007/s10909-018-2023-z) (Early Online Publication)

Banerjee, A., Heath, R. M. , Morozov, D. , Hemakumara, D., Nasti, U., Thayne, I. and Hadfield, R. H. (2018) Optical properties of refractory metal based thin films. Optical Materials Express, 8(8), pp. 2072-2088. (doi:10.1364/OME.8.002072)

2016

Floros, K., Li, X., Guiney, I., Cho, S.-J., Ternent, G., Hemakumara, D., Wasige, E. , Moran, D.A.J., Humphries, C.J. and Thayne, I.G. (2016) A Dual Barrier InAlN/AlGaN/GaN HEMT on Si Substrate with Pt Based Gates. In: 9th International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016, (Unpublished)

Floros, K. et al. (2016) Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

Li, X., Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. In: UK Semiconductor Conference, Sheffield, UK, 6-7 July 2016, (Unpublished)

Li, X., Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. 42nd International Conference on Micro and Nano Engineering (MNE 2016), Vienna, Austria, 19-23 Sept 2016. (Unpublished)

2015

Li, X., Floros, K., Hemakumara, D., Moran, D. and Thayne, I. G. (2015) Realisation of Low Annealing Temperature and Low Resistance Ohmic Contacts forAlGaN/GaN-Based Power Devices Via SiH4 Inductively Coupled Plasma Treatment. In: UK Semiconductor Conference, Sheffield, UK, 1-2 July 2015,

This list was generated on Wed Aug 15 23:01:53 2018 BST.
Number of items: 7.

Articles

Morozov, D. , Doyle, S. M., Banerjee, A., Brien, T. L.R., Hemakumara, D., Thayne, I. G., Wood, K. and Hadfield, R. H. (2018) Design and characterisation of titanium nitride sub-arrays of kinetic inductance detectors for passive terahertz imaging. Journal of Low Temperature Physics, (doi:10.1007/s10909-018-2023-z) (Early Online Publication)

Banerjee, A., Heath, R. M. , Morozov, D. , Hemakumara, D., Nasti, U., Thayne, I. and Hadfield, R. H. (2018) Optical properties of refractory metal based thin films. Optical Materials Express, 8(8), pp. 2072-2088. (doi:10.1364/OME.8.002072)

Conference or Workshop Item

Li, X., Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. 42nd International Conference on Micro and Nano Engineering (MNE 2016), Vienna, Austria, 19-23 Sept 2016. (Unpublished)

Conference Proceedings

Floros, K., Li, X., Guiney, I., Cho, S.-J., Ternent, G., Hemakumara, D., Wasige, E. , Moran, D.A.J., Humphries, C.J. and Thayne, I.G. (2016) A Dual Barrier InAlN/AlGaN/GaN HEMT on Si Substrate with Pt Based Gates. In: 9th International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016, (Unpublished)

Floros, K. et al. (2016) Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

Li, X., Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. In: UK Semiconductor Conference, Sheffield, UK, 6-7 July 2016, (Unpublished)

Li, X., Floros, K., Hemakumara, D., Moran, D. and Thayne, I. G. (2015) Realisation of Low Annealing Temperature and Low Resistance Ohmic Contacts forAlGaN/GaN-Based Power Devices Via SiH4 Inductively Coupled Plasma Treatment. In: UK Semiconductor Conference, Sheffield, UK, 1-2 July 2015,

This list was generated on Wed Aug 15 23:01:53 2018 BST.