Mr David Millar

  • Research Assistant (Electronic and Nanoscale Engineering)

Publications

List by: Type | Date

Jump to: 2017 | 2016
Number of items: 6.

2017

Millar, D. et al. (2017) Electrical and Chemical Analysis of the In-situ H2 Plasma Cleaned InGaSb-Al2O3 Interface. 48th IEEE Semiconductor Interface Specialists Conference (SISC 2017), San Diego, CA, USA, 6 -9 Dec 2017.

Hurley, P.K., Monaghan, S., O'Connor, E., Caruso, E., Cherkaoui, K., Floyd, L., Povey, I. M., Millar, D. A. J., Peralagu, U. and Thayne, I. G. (2017) (Invited) The Inversion Behaviour of Narrow Band Gap Mos Systems: Experimental Observations, Physics Based Simulations and Applications. 232nd ECS Meeting, National Harbor, MD, USA, 01-05 Oct 2017.

Fu, Y.-C., Peralagu, U. , Lin, J., Povey, I., Millar, D. A.J., Monaghan, S., Droopad, R., Hurley, P. K. and Thayne, I. G. (2017) The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors. Applied Physics Letters, 110(14), 142905. (doi:10.1063/1.4980012)

2016

Li, X., Fu, Y.-C., Millar, D.A.J., Peralagu, U. , Steer, M. and Thayne, I.G. (2016) The Impact of an HBr/Ar Atomic Layer Etch (ALE) Process for InGaAs Vertical Nanowire Diameter Reduction on the Interface Between InGaAs and In-situ ALD Deposited HfO2. 47th IEEE Semiconductor Interface Specialists Conference (SISC 2016), San Diego, CA, USA, 8-10 Dec 2016.

Hurley, P. K. et al. (2016) Impedance Spectroscopy of Narrow Band Gap III-V MOS Systems. SINANO-III-V-MOS-Compose3 Workshop, Lausanne, Switzerland, 12 Sep 2016.

Millar, D., Peralagu, U. , Fu, Y.-C., Li, X., Steer, M. and Thayne, I. (2016) Initial Investigation on the Impact of In Situ Hydrogen Plasma Exposure to the Interface Between Molecular Beam Epitaxially Grown P-Ga0.7In0.3Sb (100) and Thermal Atomic Layer Deposited (ALD) Al2O3. In: 19th Workshop on Dielectrics in Microelectronics (WoDIM), Aci Castello, Catania, Italy, 27-30 Jun 2016,

This list was generated on Thu Aug 16 20:52:10 2018 BST.
Number of items: 6.

Articles

Fu, Y.-C., Peralagu, U. , Lin, J., Povey, I., Millar, D. A.J., Monaghan, S., Droopad, R., Hurley, P. K. and Thayne, I. G. (2017) The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors. Applied Physics Letters, 110(14), 142905. (doi:10.1063/1.4980012)

Conference or Workshop Item

Millar, D. et al. (2017) Electrical and Chemical Analysis of the In-situ H2 Plasma Cleaned InGaSb-Al2O3 Interface. 48th IEEE Semiconductor Interface Specialists Conference (SISC 2017), San Diego, CA, USA, 6 -9 Dec 2017.

Hurley, P.K., Monaghan, S., O'Connor, E., Caruso, E., Cherkaoui, K., Floyd, L., Povey, I. M., Millar, D. A. J., Peralagu, U. and Thayne, I. G. (2017) (Invited) The Inversion Behaviour of Narrow Band Gap Mos Systems: Experimental Observations, Physics Based Simulations and Applications. 232nd ECS Meeting, National Harbor, MD, USA, 01-05 Oct 2017.

Li, X., Fu, Y.-C., Millar, D.A.J., Peralagu, U. , Steer, M. and Thayne, I.G. (2016) The Impact of an HBr/Ar Atomic Layer Etch (ALE) Process for InGaAs Vertical Nanowire Diameter Reduction on the Interface Between InGaAs and In-situ ALD Deposited HfO2. 47th IEEE Semiconductor Interface Specialists Conference (SISC 2016), San Diego, CA, USA, 8-10 Dec 2016.

Hurley, P. K. et al. (2016) Impedance Spectroscopy of Narrow Band Gap III-V MOS Systems. SINANO-III-V-MOS-Compose3 Workshop, Lausanne, Switzerland, 12 Sep 2016.

Conference Proceedings

Millar, D., Peralagu, U. , Fu, Y.-C., Li, X., Steer, M. and Thayne, I. (2016) Initial Investigation on the Impact of In Situ Hydrogen Plasma Exposure to the Interface Between Molecular Beam Epitaxially Grown P-Ga0.7In0.3Sb (100) and Thermal Atomic Layer Deposited (ALD) Al2O3. In: 19th Workshop on Dielectrics in Microelectronics (WoDIM), Aci Castello, Catania, Italy, 27-30 Jun 2016,

This list was generated on Thu Aug 16 20:52:10 2018 BST.