Miss Cristina Medina Bailon

  • Research Associate (Electronic & Nanoscale Engineering)

Publications

List by: Type | Date

Jump to: 2019 | 2018
Number of items: 15.

2019

Medina Bailon, C., Sadi, T., Nedjalkov, M., Carrillo Nenez, C., Lee, J., Badami, O., Georgiev, V. , Selberherr, S. and Asenov, A. (2019) Mobility of circular and elliptical si nanowire transistors using a multi-subband 1d formalism. IEEE Electron Device Letters, (doi:10.1109/LED.2019.2934349) (Early Online Publication)

Badami, O., Medina-Bailon, C., Berrada, S., Carrillo-Nunez, H., Lee, J., Georgiev, V. and Asenov, A. (2019) Comprehensive study of cross-section dependent effective masses for silicon based gate-all-around transistors. Applied Sciences, 9(9), 1895. (doi:10.3390/app9091895)

Medina Bailon, C., Padilla, J. L., Sadi, T., Sampedro, C., Godoy, A., Donetti, L., Georgiev, V. P. , Gamiz, F. and Asenov, A. (2019) Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices. IEEE Transactions on Electron Devices, 66(3), pp. 1145-1152. (doi:10.1109/TED.2019.2890985)

Sadi, T., Medina Bailon, C., Nedjalkov, M., Lee, J., Badami, O., Berrada, S., Carrillo-Nunez, H., Georgiev, V. , Selberherr, S. and Asenov, A. (2019) Simulation of the impact of ionized impurity scattering on the total mobility in Si nanowire transistors. Materials, 12(1), 124. (doi:10.3390/ma12010124)

Lee, J., Medina-Bailon, C., Berrada, S., Carrillo-Nunez, H., Sadi, T., Georgiev, V. P. , Nedjalkov, M. and Asenov, A. (2019) A Multi-Scale Simulation Study of the Strained Si Nanowire FETs. In: 2018 IEEE 13th Nanotechnology Materials & Devices Conference (NMDC 2018), Portland, OR, USA, 14-17 Oct 2018, ISBN 9781538610169 (doi:10.1109/NMDC.2018.8605884)

Medina Bailon, C., Sadi, T., Sampedro, C., Padilla, J. L., Donetti, L., Georgiev, V. , Gamiz, F. and Asenov, A. (2019) Impact of the trap attributes on the gate leakage mechanisms in a 2D MS-EMC nanodevice simulator. In: Nikolov, G., Kolkovska, N. and Georgiev, K. (eds.) Numerical Methods and Applications. Series: Lecture Notes in Computer Science, 11189 (11189). Springer, pp. 273-280. ISBN 9783030106911 (doi:10.1007/978-3-030-10692-8_30)

2018

Lee, J., Badami, O., Carrillo-Nunez, H., Berrada, S., Medina-Bailon, C., Dutta, T., Adamu-Lema, F., Georgiev, V. P. and Asenov, A. (2018) Variability predictions for the next technology generations of n-type SixGe1-x nanowire MOSFETs. Micromachines, 9(12), 643. (doi:10.3390/mi9120643)

Berrada, S., Dutta, T., Carrillo-Nunez, H., Duan, M. , Adamu-Lema, F., Lee, J., Georgiev, V. , Medina Bailon, C. and Asenov, A. (2018) NESS: new flexible Nano-Electronic Simulation Software. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 22-25. ISBN 9781538667910 (doi:10.1109/SISPAD.2018.8551701)

Berrada, S., Lee, J., Carrillo-Nunez, H., Medina Bailon, C., Adamu-Lema, F., Georgiev, V. and Asenov, A. (2018) Quantum Transport Investigation of Threshold Voltage Variability in Sub-10 nm JunctionlessSi Nanowire FETs. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 244-247. ISBN 9781538667910 (doi:10.1109/SISPAD.2018.8551638)

Medina Bailon, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carrillo-Nunez, H., Georgiev, V. P. , Selberherr, S. and Asenov, A. (2018) Impact of the Effective Mass on the Mobility in Si Nanowire Transistors. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 297-300. ISBN 9781538667910 (doi:10.1109/SISPAD.2018.8551630)

Medina Bailon, C., Sampedro, C., Padilla, J. L., Godoy, A., Donetti, L., Georgiev, V. P. , Gamiz, F. and Asenov, A. (2018) Impact of Strain on S/D tunneling in FinFETs: a MS-EMC study. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 301-304. ISBN 9781538667910 (doi:10.1109/SISPAD.2018.8551707)

Carrillo-Nunez, H., Lee, J., Berrada, S., Medina-Bailon, C., Adamu-Lema, F., Luisier, M., Asenov, A. and Georgiev, V. P. (2018) Random dopant-induced variability in Si-InAs nanowire tunnel FETs: a quantum transport simulation study. IEEE Electron Device Letters, 39(9), pp. 1473-1476. (doi:10.1109/LED.2018.2859586)

Medina Bailon, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carrillo-Nunez, H., Georgiev, V. , Selberherr, S. and Asenov, A. (2018) Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors. In: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain, 19-21 Mar 2018, ISBN 9781538648117 (doi:10.1109/ULIS.2018.8354723)

Medina Bailon, C., Sampedro, C., Padilla, J.L., Godoy, A., Donetti, L., Gamiz, F. and Asenov, A. (2018) MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections. In: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain, 19-21 Mar 2018, ISBN 9781538648124 (doi:10.1109/ULIS.2018.8354758)

Padilla, J. L., Medina-Bailon, C., Alper, C., Gamiz, F. and Ionescu, A. M. (2018) Confinement-induced InAs/GaSb heterojunction electron–hole bilayer tunneling field-effect transistor. Applied Physics Letters, 112(18), 182101. (doi:10.1063/1.5012948)

This list was generated on Mon Nov 18 14:38:08 2019 GMT.
Number of items: 15.

Articles

Medina Bailon, C., Sadi, T., Nedjalkov, M., Carrillo Nenez, C., Lee, J., Badami, O., Georgiev, V. , Selberherr, S. and Asenov, A. (2019) Mobility of circular and elliptical si nanowire transistors using a multi-subband 1d formalism. IEEE Electron Device Letters, (doi:10.1109/LED.2019.2934349) (Early Online Publication)

Badami, O., Medina-Bailon, C., Berrada, S., Carrillo-Nunez, H., Lee, J., Georgiev, V. and Asenov, A. (2019) Comprehensive study of cross-section dependent effective masses for silicon based gate-all-around transistors. Applied Sciences, 9(9), 1895. (doi:10.3390/app9091895)

Medina Bailon, C., Padilla, J. L., Sadi, T., Sampedro, C., Godoy, A., Donetti, L., Georgiev, V. P. , Gamiz, F. and Asenov, A. (2019) Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices. IEEE Transactions on Electron Devices, 66(3), pp. 1145-1152. (doi:10.1109/TED.2019.2890985)

Sadi, T., Medina Bailon, C., Nedjalkov, M., Lee, J., Badami, O., Berrada, S., Carrillo-Nunez, H., Georgiev, V. , Selberherr, S. and Asenov, A. (2019) Simulation of the impact of ionized impurity scattering on the total mobility in Si nanowire transistors. Materials, 12(1), 124. (doi:10.3390/ma12010124)

Lee, J., Badami, O., Carrillo-Nunez, H., Berrada, S., Medina-Bailon, C., Dutta, T., Adamu-Lema, F., Georgiev, V. P. and Asenov, A. (2018) Variability predictions for the next technology generations of n-type SixGe1-x nanowire MOSFETs. Micromachines, 9(12), 643. (doi:10.3390/mi9120643)

Carrillo-Nunez, H., Lee, J., Berrada, S., Medina-Bailon, C., Adamu-Lema, F., Luisier, M., Asenov, A. and Georgiev, V. P. (2018) Random dopant-induced variability in Si-InAs nanowire tunnel FETs: a quantum transport simulation study. IEEE Electron Device Letters, 39(9), pp. 1473-1476. (doi:10.1109/LED.2018.2859586)

Padilla, J. L., Medina-Bailon, C., Alper, C., Gamiz, F. and Ionescu, A. M. (2018) Confinement-induced InAs/GaSb heterojunction electron–hole bilayer tunneling field-effect transistor. Applied Physics Letters, 112(18), 182101. (doi:10.1063/1.5012948)

Book Sections

Medina Bailon, C., Sadi, T., Sampedro, C., Padilla, J. L., Donetti, L., Georgiev, V. , Gamiz, F. and Asenov, A. (2019) Impact of the trap attributes on the gate leakage mechanisms in a 2D MS-EMC nanodevice simulator. In: Nikolov, G., Kolkovska, N. and Georgiev, K. (eds.) Numerical Methods and Applications. Series: Lecture Notes in Computer Science, 11189 (11189). Springer, pp. 273-280. ISBN 9783030106911 (doi:10.1007/978-3-030-10692-8_30)

Conference Proceedings

Lee, J., Medina-Bailon, C., Berrada, S., Carrillo-Nunez, H., Sadi, T., Georgiev, V. P. , Nedjalkov, M. and Asenov, A. (2019) A Multi-Scale Simulation Study of the Strained Si Nanowire FETs. In: 2018 IEEE 13th Nanotechnology Materials & Devices Conference (NMDC 2018), Portland, OR, USA, 14-17 Oct 2018, ISBN 9781538610169 (doi:10.1109/NMDC.2018.8605884)

Berrada, S., Dutta, T., Carrillo-Nunez, H., Duan, M. , Adamu-Lema, F., Lee, J., Georgiev, V. , Medina Bailon, C. and Asenov, A. (2018) NESS: new flexible Nano-Electronic Simulation Software. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 22-25. ISBN 9781538667910 (doi:10.1109/SISPAD.2018.8551701)

Berrada, S., Lee, J., Carrillo-Nunez, H., Medina Bailon, C., Adamu-Lema, F., Georgiev, V. and Asenov, A. (2018) Quantum Transport Investigation of Threshold Voltage Variability in Sub-10 nm JunctionlessSi Nanowire FETs. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 244-247. ISBN 9781538667910 (doi:10.1109/SISPAD.2018.8551638)

Medina Bailon, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carrillo-Nunez, H., Georgiev, V. P. , Selberherr, S. and Asenov, A. (2018) Impact of the Effective Mass on the Mobility in Si Nanowire Transistors. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 297-300. ISBN 9781538667910 (doi:10.1109/SISPAD.2018.8551630)

Medina Bailon, C., Sampedro, C., Padilla, J. L., Godoy, A., Donetti, L., Georgiev, V. P. , Gamiz, F. and Asenov, A. (2018) Impact of Strain on S/D tunneling in FinFETs: a MS-EMC study. In: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, 24-26 Sept 2018, pp. 301-304. ISBN 9781538667910 (doi:10.1109/SISPAD.2018.8551707)

Medina Bailon, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carrillo-Nunez, H., Georgiev, V. , Selberherr, S. and Asenov, A. (2018) Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors. In: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain, 19-21 Mar 2018, ISBN 9781538648117 (doi:10.1109/ULIS.2018.8354723)

Medina Bailon, C., Sampedro, C., Padilla, J.L., Godoy, A., Donetti, L., Gamiz, F. and Asenov, A. (2018) MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections. In: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain, 19-21 Mar 2018, ISBN 9781538648124 (doi:10.1109/ULIS.2018.8354758)

This list was generated on Mon Nov 18 14:38:08 2019 GMT.