Dr Abdullah Al-Khalidi

  • Research Associate (Electronic and Nanoscale Engineering)

Publications

List by: Type | Date

Jump to: 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012
Number of items: 33.

2018

Wang, J., Al-Khalidi, A. , Wang, L., Morariu, R., Ofiare, A. and Wasige, E. (2018) 15 Gbps 50 cm Wireless Link using a High Power Compact III-V 84 GHz Transmitter. IEEE Transactions on Microwave Theory and Techniques, (Accepted for Publication)

Al-Khalidi, A. , Alharbi, K., Wang, J. and Wasige, E. (2018) THz Electronics for Data Centre Wireless Links - the TERAPOD Project. In: 9th International Congress on Ultra Modern Telecommunications and Control Systems, Munich, Germany, 6-8 Nov 2017, pp. 445-448. ISBN 9781538634356 (doi:10.1109/ICUMT.2017.8255202)

2017

Wang, J., Al-Khalidi, A. , Zhang, C., Ofiare, A., Wang, L., Wasige, E. and Figueiredo, J. M. L. (2017) Resonant Tunneling Diode as High Speed Optical/Electronic Transmitter. In: 2017 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT), Liverpool, UK, 11-13 Sept 2017, pp. 1-4. ISBN 9781538627204 (doi:10.1109/UCMMT.2017.8068497)

Wang, J., Al-Khalidi, A. , Zhang, C., Cornescu, A., Morariu, R. and Wasige, E. (2017) Resonant Tunneling Diode Oscillator Source for Terahertz Applications. Oxford Circuits and Systems Conference (OXCAS 2017), Oxford, UK, 19 Sep 2017.

Bissell, V., Rodrigues, G. C., Wang, J., Al-Khalidi, A. , Alharbi, K. H. and Wasige, E. (2017) Resonant Tunneling Diode Photodetectors for Optical Communications. In: Third International Conference on Applications of Optics and Photonics, Faro, Portugal, 08-12 May 2017, p. 1045307. ISBN 9781510613836 (doi:10.1117/12.2271317)

Watson, S., Zhang, W., Wang, J., Al-Khalidi, A. , Cantu, H., Figueiredo, J., Wasige, E. and Kelly, A. E. (2017) Resonant Tunneling Diode Oscillators for Optical Communications. In: Third International Conference on Applications of Optics and Photonics, Faro, Portugal, 08-12 May 2017, 104532Q. ISBN 9781510613836 (doi:10.1117/12.2276319)

Vasilevska, M., Al-Khalidi, A. and Wasige, E. (2017) Thermal Performance of AlGaN/GaN HEMTs on SiC Substrates. UK Nitrides Consortium Summer Meeting, Sheffield, UK, 12-13 Jul 2017.

Cornescu, A., Wang, J., Al-Khalidi, A. , Morariu, R. and Wasige, E. (2017) IV Characteristics of a Stabilized Resonant Tunnelling Diodes. CSW 2017, Berlin, Germany, 14-18 May 2017.

Wang, J., Al-Khalidi, A. , Cornescu, A., Morariu, R., Khalid, A.-u.-H. , Cumming, D. and Wasige, E. (2017) Loading Effect of W-band Resonant Tunneling Diode Oscillator by Using Load-Pull Measurement. CSW 2017, Berlin, Germany, 14-18 May 2017.

Wasige, E. , Al-Khalidi, A. , Alharbi, K. and Wang, J. (2017) High performance microstrip resonant tunneling diode oscillators as terahertz sources. In: UK-Europe-China Workshop on mm-waves and THz Technologies committee (UCMMT2016), Qingdao, China, 5-7 Sep 2016, pp. 25-28. ISBN 9781509022762 (doi:10.1109/UCMMT.2016.7873950)

Wasige, E. , Alharbi, K. H., Al-Khalidi, A. , Wang, J. and Khalid, A. (2017) Resonant Tunnelling Diode Terahertz Sources for Broadband Wireless Communications. In: Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications X, San Francisco, CA, USA, 28 Jan - 2 Feb 2017, (doi:10.1117/12.2256357)

Wang, J., Al-Khalidi, A. , Alharbi, K., Ofiare, A., Zhou, H., Wasige, E. and Figueiredo, J. (2017) High Performance Resonant Tunneling Diode Oscillators as Terahertz Sources. In: European Microwave Conference, London, 3-7 Oct 2016, pp. 341-344. ISBN 9782874870439 (doi:10.1109/EuMC.2016.7824348)

Wang, J., Rodrigues, G. C., Al-Khalidi, A. , Figueiredo, J. M.L. and Wasige, E. (2017) Resonant tunnelling diode based high speed optoelectronic transmitters. In: Third International Conference on Applications of Optics and Photonics, Faro, Portugal, 08-12 May 2017, 104532Y. (doi:10.1117/12.2276350)

2016

Wang, J., Al-Khalidi, A. , Alharbi, K., Ofiare, A., Zhou, H. and Wasige, E. (2016) G-Band MMIC Resonant Tunneling Diode Oscillators. In: 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), Toyama, Japan, 26-30 Jun 2016, ISBN 9781509019649 (doi:10.1109/ICIPRM.2016.7528736)

Pessoa, L. et al. (2016) iBROW – innovative ultra-BROadband ubiquitous wireless communications through terahertz transceivers. IEEE COMSOC MMTC Communications - Frontiers, 11(1), pp. 12-17.

2015

Al-Khalidi, A. and Wasige, E. (2015) Advanced Gallium Nitride Technology for Microwave Power Amplifiers. Defence and Security Doctoral Symposium, Swindon, UK, 25-26 Nov 2015.

Al-Khalidi, A. , Khalid, A. and Wasige, E. (2015) AlN/GaN HEMT Technology with In-situ SiNx Passivation. In: 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Glasgow, Scotland, 29 Jun - 02 Jul 2015, pp. 251-253. ISBN 9781479982295 (doi:10.1109/PRIME.2015.7251382)

Li, X., Floros, K., Ternent, G., Al-Khalidi, A. , Wasige, E. and Thayne, I. G. (2015) Effect of SiH4 Inductively Coupled Plasma Surface Treatment On Low Temperature and Low Resistance Ohmic Contact for AlGaN/GaN-Based Power Device. In: 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 8th International Conference on Plasma-Nano Technology & Science (ISPlasma2015 / IC-PLANTS2015), Nagoya, Japan, 26-31 March 2015,

2014

Brown, R., Macfarlane, D., Al-Khalidi, A. , Li, X., Ternent, G., Zhou, H., Thayne, I. and Wasige, E. (2014) A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT. IEEE Electron Device Letters, 35(9), pp. 906-908. (doi:10.1109/LED.2014.2334394)

Brown, R., Al-Khalidi, A. , Macfarlane, D., Taking, S., Ternent, G., Thayne, I. and Wasige, E. (2014) Novel high performance AlGaN/GaN based enhancement-mode metal-oxide semiconductor high electron mobility transistor. Physica Status Solidi C, 11(3-4), pp. 844-847. (doi:10.1002/pssc.201300179)

Al-Khalidi, A. , Gallacher, K., Khalid, A. , Paul, D. and Wasige, E. (2014) 0.25 Ω-mm Ohmic contacts to AlN/GaN HEMT structure with in-situ SiN passivation. In: 7th Wide Band Gap Semiconductors and Components Workshop, Frascati, Italy, 11-12 Sep 2014,

Al-Khalidi, A. , Gallacher, K. and Wasige, E. (2014) Effect of annealing time and temperature on Ohmic contacts to AlN/GaN HEMT structure with in-situ SiN passivation. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014, p. 185.

Al-Khalidi, A. , Khalid, A. and Wasige, E. (2014) Comparison of AlGaN/GaN HEMTs on Silicon, Sapphire and SiC substrates- a thermal perspective. In: Compound Semiconductor Week 2014, Montpellier, France, 11–15 May 2014,

Faramehr, S., Al-Khalidi, A. , Khalid, A. , Wasige, E. , Igić, P. and Kalna, K. (2014) Device simulation and optimization of i-GaN capped AlGaN/AlN/GaN HEMT. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014,

Li, X., Ternent, G., Al-Khalidi, A. , Floros, K., Wasige, E. and Thayne, I. G. (2014) Low Temperature Ohmic Contacts to AlGaN/GaN HFETs on Si Substrates Using SiCl4 Based RIE Recess Etching. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014, p. 176.

Li, X., Ternent, G., Al-Khalidi, A. , Floros, K., Wasige, E. and Thayne, I. (2014) Low temperature Ohmic contacts to AlGaN/GaN HFETs on Si substrates using SiCl4based RIE recess etching. In: UK Semiconductors 2014, Sheffield, UK, 9-10 July 2014,

Möreke, J. et al. (2014) Investigation of the GaN-on-GaAs interface for vertical power device applications. Journal of Applied Physics, 116(1), 014502. (doi:10.1063/1.4887139)

Sinclair, J., Brown, R., Al-Khalidi, A. and Wasige, E. (2014) Fabrication and characterisation of normally-off GaN-based MOS-HEMTs. In: 7th IET International Conference on Power Electronics, Machines and Drives (PEMD) 2014, Manchester, UK, 8-10 Apr 2014, ISBN 9781849198141

2013

Brown, R., Al-Khalidi, A. , Macfarlane, D., Taking, S., Ternent, G., Thayne, I. and Wasige, E. (2013) A normally-off AlGaN/GaN HEMT technology. In: UK Nitrides Consortium, Sheffield, UK, Jul 2013,

Brown, R., Al-Khalidi, A. , Macfarlane, D., Taking, S. and Wasige, E. (2013) A novel high performance AlGaN/GaN based enhancement-mode metal-oxide-semiconductor high electron mobility transistor. In: 10th International Conference on Nitride Semiconductors, Washington, D.C., USA, 25-30 Aug 2013,

Brown, R., Al-Khalidi, A. , Ternent, G., Thayne, I. and Wasige, E. (2013) A normally off AlGaN/GaN MOSHEMT technology. In: 22nd European Workshop on Heterostructure Technology (HETECH), Glasgow, UK, 9-11 Sep 2013,

2012

Al-Khalidi, A. , Taking, S. and Wasige, E. (2012) AlN/GaN HEMTs with SiN Passivation and Recessed Ohmics. 6th Wide Band Gap Semiconductors and Components Workshop, Noordwijk, Netherlands, 8-9 Oct 2012.

Al-Khalidi, A. , Macfarlane, D. and Wasige, E. (2012) Self-aligned Recessed Ohmic Contacts for GaN-based High Electron Mobility Transistors. UK Nitride Consortium 2012, Sheffield, UK, 4-5 Jul 2012.

This list was generated on Fri Sep 21 15:43:24 2018 BST.
Number of items: 33.

Articles

Wang, J., Al-Khalidi, A. , Wang, L., Morariu, R., Ofiare, A. and Wasige, E. (2018) 15 Gbps 50 cm Wireless Link using a High Power Compact III-V 84 GHz Transmitter. IEEE Transactions on Microwave Theory and Techniques, (Accepted for Publication)

Pessoa, L. et al. (2016) iBROW – innovative ultra-BROadband ubiquitous wireless communications through terahertz transceivers. IEEE COMSOC MMTC Communications - Frontiers, 11(1), pp. 12-17.

Brown, R., Macfarlane, D., Al-Khalidi, A. , Li, X., Ternent, G., Zhou, H., Thayne, I. and Wasige, E. (2014) A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT. IEEE Electron Device Letters, 35(9), pp. 906-908. (doi:10.1109/LED.2014.2334394)

Brown, R., Al-Khalidi, A. , Macfarlane, D., Taking, S., Ternent, G., Thayne, I. and Wasige, E. (2014) Novel high performance AlGaN/GaN based enhancement-mode metal-oxide semiconductor high electron mobility transistor. Physica Status Solidi C, 11(3-4), pp. 844-847. (doi:10.1002/pssc.201300179)

Möreke, J. et al. (2014) Investigation of the GaN-on-GaAs interface for vertical power device applications. Journal of Applied Physics, 116(1), 014502. (doi:10.1063/1.4887139)

Conference or Workshop Item

Wang, J., Al-Khalidi, A. , Zhang, C., Cornescu, A., Morariu, R. and Wasige, E. (2017) Resonant Tunneling Diode Oscillator Source for Terahertz Applications. Oxford Circuits and Systems Conference (OXCAS 2017), Oxford, UK, 19 Sep 2017.

Vasilevska, M., Al-Khalidi, A. and Wasige, E. (2017) Thermal Performance of AlGaN/GaN HEMTs on SiC Substrates. UK Nitrides Consortium Summer Meeting, Sheffield, UK, 12-13 Jul 2017.

Cornescu, A., Wang, J., Al-Khalidi, A. , Morariu, R. and Wasige, E. (2017) IV Characteristics of a Stabilized Resonant Tunnelling Diodes. CSW 2017, Berlin, Germany, 14-18 May 2017.

Wang, J., Al-Khalidi, A. , Cornescu, A., Morariu, R., Khalid, A.-u.-H. , Cumming, D. and Wasige, E. (2017) Loading Effect of W-band Resonant Tunneling Diode Oscillator by Using Load-Pull Measurement. CSW 2017, Berlin, Germany, 14-18 May 2017.

Al-Khalidi, A. and Wasige, E. (2015) Advanced Gallium Nitride Technology for Microwave Power Amplifiers. Defence and Security Doctoral Symposium, Swindon, UK, 25-26 Nov 2015.

Al-Khalidi, A. , Taking, S. and Wasige, E. (2012) AlN/GaN HEMTs with SiN Passivation and Recessed Ohmics. 6th Wide Band Gap Semiconductors and Components Workshop, Noordwijk, Netherlands, 8-9 Oct 2012.

Al-Khalidi, A. , Macfarlane, D. and Wasige, E. (2012) Self-aligned Recessed Ohmic Contacts for GaN-based High Electron Mobility Transistors. UK Nitride Consortium 2012, Sheffield, UK, 4-5 Jul 2012.

Conference Proceedings

Al-Khalidi, A. , Alharbi, K., Wang, J. and Wasige, E. (2018) THz Electronics for Data Centre Wireless Links - the TERAPOD Project. In: 9th International Congress on Ultra Modern Telecommunications and Control Systems, Munich, Germany, 6-8 Nov 2017, pp. 445-448. ISBN 9781538634356 (doi:10.1109/ICUMT.2017.8255202)

Wang, J., Al-Khalidi, A. , Zhang, C., Ofiare, A., Wang, L., Wasige, E. and Figueiredo, J. M. L. (2017) Resonant Tunneling Diode as High Speed Optical/Electronic Transmitter. In: 2017 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT), Liverpool, UK, 11-13 Sept 2017, pp. 1-4. ISBN 9781538627204 (doi:10.1109/UCMMT.2017.8068497)

Bissell, V., Rodrigues, G. C., Wang, J., Al-Khalidi, A. , Alharbi, K. H. and Wasige, E. (2017) Resonant Tunneling Diode Photodetectors for Optical Communications. In: Third International Conference on Applications of Optics and Photonics, Faro, Portugal, 08-12 May 2017, p. 1045307. ISBN 9781510613836 (doi:10.1117/12.2271317)

Watson, S., Zhang, W., Wang, J., Al-Khalidi, A. , Cantu, H., Figueiredo, J., Wasige, E. and Kelly, A. E. (2017) Resonant Tunneling Diode Oscillators for Optical Communications. In: Third International Conference on Applications of Optics and Photonics, Faro, Portugal, 08-12 May 2017, 104532Q. ISBN 9781510613836 (doi:10.1117/12.2276319)

Wasige, E. , Al-Khalidi, A. , Alharbi, K. and Wang, J. (2017) High performance microstrip resonant tunneling diode oscillators as terahertz sources. In: UK-Europe-China Workshop on mm-waves and THz Technologies committee (UCMMT2016), Qingdao, China, 5-7 Sep 2016, pp. 25-28. ISBN 9781509022762 (doi:10.1109/UCMMT.2016.7873950)

Wasige, E. , Alharbi, K. H., Al-Khalidi, A. , Wang, J. and Khalid, A. (2017) Resonant Tunnelling Diode Terahertz Sources for Broadband Wireless Communications. In: Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications X, San Francisco, CA, USA, 28 Jan - 2 Feb 2017, (doi:10.1117/12.2256357)

Wang, J., Al-Khalidi, A. , Alharbi, K., Ofiare, A., Zhou, H., Wasige, E. and Figueiredo, J. (2017) High Performance Resonant Tunneling Diode Oscillators as Terahertz Sources. In: European Microwave Conference, London, 3-7 Oct 2016, pp. 341-344. ISBN 9782874870439 (doi:10.1109/EuMC.2016.7824348)

Wang, J., Rodrigues, G. C., Al-Khalidi, A. , Figueiredo, J. M.L. and Wasige, E. (2017) Resonant tunnelling diode based high speed optoelectronic transmitters. In: Third International Conference on Applications of Optics and Photonics, Faro, Portugal, 08-12 May 2017, 104532Y. (doi:10.1117/12.2276350)

Wang, J., Al-Khalidi, A. , Alharbi, K., Ofiare, A., Zhou, H. and Wasige, E. (2016) G-Band MMIC Resonant Tunneling Diode Oscillators. In: 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), Toyama, Japan, 26-30 Jun 2016, ISBN 9781509019649 (doi:10.1109/ICIPRM.2016.7528736)

Al-Khalidi, A. , Khalid, A. and Wasige, E. (2015) AlN/GaN HEMT Technology with In-situ SiNx Passivation. In: 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Glasgow, Scotland, 29 Jun - 02 Jul 2015, pp. 251-253. ISBN 9781479982295 (doi:10.1109/PRIME.2015.7251382)

Li, X., Floros, K., Ternent, G., Al-Khalidi, A. , Wasige, E. and Thayne, I. G. (2015) Effect of SiH4 Inductively Coupled Plasma Surface Treatment On Low Temperature and Low Resistance Ohmic Contact for AlGaN/GaN-Based Power Device. In: 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 8th International Conference on Plasma-Nano Technology & Science (ISPlasma2015 / IC-PLANTS2015), Nagoya, Japan, 26-31 March 2015,

Al-Khalidi, A. , Gallacher, K., Khalid, A. , Paul, D. and Wasige, E. (2014) 0.25 Ω-mm Ohmic contacts to AlN/GaN HEMT structure with in-situ SiN passivation. In: 7th Wide Band Gap Semiconductors and Components Workshop, Frascati, Italy, 11-12 Sep 2014,

Al-Khalidi, A. , Gallacher, K. and Wasige, E. (2014) Effect of annealing time and temperature on Ohmic contacts to AlN/GaN HEMT structure with in-situ SiN passivation. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014, p. 185.

Al-Khalidi, A. , Khalid, A. and Wasige, E. (2014) Comparison of AlGaN/GaN HEMTs on Silicon, Sapphire and SiC substrates- a thermal perspective. In: Compound Semiconductor Week 2014, Montpellier, France, 11–15 May 2014,

Faramehr, S., Al-Khalidi, A. , Khalid, A. , Wasige, E. , Igić, P. and Kalna, K. (2014) Device simulation and optimization of i-GaN capped AlGaN/AlN/GaN HEMT. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014,

Li, X., Ternent, G., Al-Khalidi, A. , Floros, K., Wasige, E. and Thayne, I. G. (2014) Low Temperature Ohmic Contacts to AlGaN/GaN HFETs on Si Substrates Using SiCl4 Based RIE Recess Etching. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014, p. 176.

Li, X., Ternent, G., Al-Khalidi, A. , Floros, K., Wasige, E. and Thayne, I. (2014) Low temperature Ohmic contacts to AlGaN/GaN HFETs on Si substrates using SiCl4based RIE recess etching. In: UK Semiconductors 2014, Sheffield, UK, 9-10 July 2014,

Sinclair, J., Brown, R., Al-Khalidi, A. and Wasige, E. (2014) Fabrication and characterisation of normally-off GaN-based MOS-HEMTs. In: 7th IET International Conference on Power Electronics, Machines and Drives (PEMD) 2014, Manchester, UK, 8-10 Apr 2014, ISBN 9781849198141

Brown, R., Al-Khalidi, A. , Macfarlane, D., Taking, S., Ternent, G., Thayne, I. and Wasige, E. (2013) A normally-off AlGaN/GaN HEMT technology. In: UK Nitrides Consortium, Sheffield, UK, Jul 2013,

Brown, R., Al-Khalidi, A. , Macfarlane, D., Taking, S. and Wasige, E. (2013) A novel high performance AlGaN/GaN based enhancement-mode metal-oxide-semiconductor high electron mobility transistor. In: 10th International Conference on Nitride Semiconductors, Washington, D.C., USA, 25-30 Aug 2013,

Brown, R., Al-Khalidi, A. , Ternent, G., Thayne, I. and Wasige, E. (2013) A normally off AlGaN/GaN MOSHEMT technology. In: 22nd European Workshop on Heterostructure Technology (HETECH), Glasgow, UK, 9-11 Sep 2013,

This list was generated on Fri Sep 21 15:43:24 2018 BST.