The non-equilibrium Green's function approach: modeling of electronic and opto-electronic nano-devices - Professor Marc Bescond, CNRS

Professor Marc Bescond, IM2NP, CNRS, will be visiting the School of Engineering. As part of his visit he will deliver a seminar entitled, "The non-equilibrium Green's function approach: modeling of electronic and opto-electronic nano-devices". Abstract and biography are given below.

Date & Time: 13:00, Wednesday, 30th November
Venue: Room 514, Rankine Building


Abstract

For almost two decades, the non-equilibrium Green's function (NEGF) approach has been intensively developed to perform realistic modeling of quantum transport phenomena in nano-structures and devices [1].  After a brief presentation of the NEGF method, the seminar will first address the impact of a single dopant impurity [2,3] and the access region geometry [4] in ultimate silicon nanowire transistors. In the second part, we will show that it is possible to treat electron-photon interactions and to apply this formalism to the modeling and optimization of III-V third generation solar cells [5]. We will discuss in the last section about an alternative treatment of inelastic interactions in NEGF [6] that significantly reduce the computational time.

Biography

From 2005 to 2007, Marc Bescond was Associate Professor of Electrical Engineering and Physics at Grenoble INP. Before attending Grenoble, he was post-doc in the Device Modelling Group at the University of Glasgow. Since October 2007, he is researcher at the CNRS (chargé de recherche). He is also Professor of Physics at ISEN-Toulon. His research interest is in the modelling of nano/opto-electronic devices, three-dimensional simulations of quantum transport using the non-equilibrium Green’s function formalism.

References

[1] H. Haug and A.-P. Jauho, Quantum Kinetics in Transport and Optics of Semiconductors, Vol. 123 of Springer Series in Solid-State Sciences (Springer, Berlin, New York, 1996).

[2] H. Carrillo-Nuñez, M. Bescond, N. Cavassilas, E. Dib, M. Lannoo, J. Appl. Phys., 116, 164505 (2014).

[3] M. Bescond, H. H. Carrillo-Nuñez, S. Berrada, N. Cavassilas and M. Lannoo, Solid State Electron. 122, 1 (2016).

[4] S. Berrada, M. Bescond, N. Cavassilas, L. Raymond and M. Lannoo, Appl. Phys. Lett. 107, 153508 (2015).

[5] N. Cavassilas, C. Gelly, F. Michelini, M. Bescond, IEEE Journal of Photovoltaics, 5, 1621 (2015).

[6] Y. Lee, M. Lannoo, N. Cavassilas, M. Luisier, and M. Bescond, Phys. Rev. B 93, 205411 (2016).

First published: 24 November 2016