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telephone:
01413305455
email:
Douglas.MacFarlane@glasgow.ac.uk
G153, Computing Science, 15 Lilybank Gardens, Glasgow G12 8QQ
Taking, S., MacFarlane, D. and Wasige, E. (2011) AlN/GaN MOS-HEMTs with thermally grown Al2O3 passivation. IEEE Transactions on Electron Devices, 58(5), pp. 1418-1424. (doi:10.1109/TED.2011.2114665)
Taking, S., MacFarlane, D. and Wasige, E. (2011) AlN/GaN-based MOS-HEMT technology: processing and device results. Active and Passive Electronic Components, 2011(821305), (doi:10.1155/2011/821305)
Taking, S., MacFarlane, D. and Wasige, E. (2011) AlN/GaN MOS-HEMTs with thermally grown Al2O3 passivation. IEEE Transactions on Electron Devices, 58(5), pp. 1418-1424. (doi:10.1109/TED.2011.2114665)
Taking, S., MacFarlane, D. and Wasige, E. (2011) AlN/GaN-based MOS-HEMT technology: processing and device results. Active and Passive Electronic Components, 2011(821305), (doi:10.1155/2011/821305)