2011

Wang, X., Brown, A.R., Idris, N., Markov, S., Roy, G., and Asenov, A. (2011) Statistical threshold-voltage variability in scaled decananometer bulk HKMG MOSFETs: a full-scale 3-D simulation scaling study. IEEE Transactions on Electron Devices, 58 (8). pp. 2293-2301. ISSN 0018-9383 (doi:10.1109/TED.2011.2149531)

2010

Bindu, B., Cheng, B., Roy, G., Wang, X., Roy, S., and Asenov, A. (2010) Parameter set and data sampling strategy for accurate yet efficient statistical MOSFET compact model extraction. Solid-State Electronics, 54 (3). pp. 307-315. ISSN 0038-1101 (doi:10.1016/j.sse.2009.09.028)

Asenov, A., Cheng, B., Dideban, D., Kovac, U., Moezi, N., Millar, C., Roy, G., Brown, A., and Roy, S. (2010) Modeling and simulation of transistor and circuit variability and Reliability. In: Custom Integrated Circuit Conference (CICC), 19-22 September 2010, San Jose, CA, USA.

Cheng, B., Dideban, D., Moezi, N., Millar, C., Roy, G., Wang, X., Roy, S., and Asenov, A. (2010) Capturing intrinsic parameter fluctuations using the PSP compact model. In: Proceedings of the Conference on Design, Automation and Test in Europe (DATE 2010), 8-12 March 2010, Dresden, Germany.

Cheng, B.J., Dideban, D., Moezi, N., Millar, C., Roy, G., Wang, X., Roy, S., and Asenov, A. (2010) Statistical-variability compact-modeling strategies for BSIM4 and PSP. IEEE Design and Test of Computers, 27 (2). pp. 26-35. ISSN 0740-7475 (doi:10.1109/MDT.2010.53)

Kovac, U., Alexander, C., Roy, G., Cheng, B., and Asenov, A. (2010) Compact Model Extraction from Quantum Corrected Statistical Monte Carlo Simulation of Random Dopant Induced Drain Current Variability. In: 8th International Conference on Advanced Semiconductor Devices and Microsystems, 25-27 Oct 2010. (In Press)

Kovac, U., Alexander, C., Roy, G., Riddet, C., Cheng, B.J., and Asenov, A. (2010) Hierarchical Simulation of Statistical Variability: From 3-D MC With "ab initio" Ionized Impurity Scattering to Statistical Compact Models. IEEE Transactions on Electron Devices, 57 (10). pp. 2418-2426. ISSN 0018-9383 (doi:10.1109/TED.2010.2062517)

Kovac, U., Dideban, D., Cheng, B., Moezi, N., Roy, G., and Asenov, A. (2010) A novel approach to the statistical generation of non-normal distributed PSP compact model parameters using a nonlinear power method. In: 15th International Conference on Simulation of Semiconductor Preocesses and Devices (SISPAD), 6-8 Sep 2010, Bologna, Italy.

Sinnott, R.O., Stewart, G., Asenov, A., Millar, C., Reid, D., Roy, G., Roy, S., Davenhall, C., Harbulot, B., and Jones, M. (2010) E-infrastructure support for nanoCMOS device and circuit simulations. In: Hamza, M.H. (ed.) Proceedings of the Conference on Parallel and Distributed Computing and Networks, Innsbruck, Austria, 16-18th February 2010. ACTA Press, Anaheim, USA. ISBN 9780889868342

2009

Davenhall, C., Harbulot, B., Jones, M., Stewart, G., Sinnott, R.O., Asenov, A., Millar, C., Roy, G., and Reid, D. (2009) Data management of nanometre­ scale CMOS device simulations. In: 5th International Digital Curation Conference, 2-4 Dec 2009, London, UK.

Sinnott, R.O., Stewart, G., Asenov, A., Millar, C., Reid, D., Roy, G., Roy, S., Davenhall, C., Harbulot, B., and Jones, M. (2009) Multi-level simulations to support nanoCMOS electronics research. In: 2009 ASME Design Engineering Technical Conferences and Computers and Information in Engineering Conference DETC2009, August 30-September 2, 2009, San Diego, California, USA. American Society of Mechanical Engineers, New York, USA. ISBN 9780791838563

Reid, D., Millar, C., Roy, S., Roy, G., Sinnott, R.O., Stewart, G., Stewart, G., and Asenov, A. (2009) Enabling cutting-edge semiconductor simulation through grid technology. Royal Society of London Philosophical Transactions A: Mathematical, Physical and Engineering Sciences, 367 (1897). pp. 2573-2584. ISSN 1364-503X (doi:10.1098/rsta.2009.0031)

Alexander, C., Kovac, U., Roy, G., Roy, S., and Asenov, A. (2009) A unified density gradient approach to 'ab-initio' ionized impurity scattering in 3D MC simulations of nano-CMOS variability. In: Ultimate Integration of Silicon: ULIS 2009, 18-20 Mar 2009, Aachen, Germany.

Asenov, A., Brown, A., Roy, G., Cheng, B., Alexander, C., Riddet, C., Kovac, U., Martinez, A., Seoane, N., and Roy, S. (2009) Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green's function techniques. Journal of Computational Electronics, 8 (3-4). pp. 349-373. ISSN 1569-8025 (doi:10.1007/s10825-009-0292-0)

Cheng, B., Moezi, N., Dideban, D., Roy, G., Roy, S., and Asenov, A. (2009) Benchmarking the Accuracy of PCA Generated Statistical Compact Model Parameters Against Physical Device Simulation and Directly Extracted Statistical Parameters. In: Simulation of Semiconductor Processes and Devices, 2009, 9-11th September, 2009, San Diego, CA .

Reid, D., Millar, C., Roy, G., Roy, S., and Asenov, A. (2009) Analysis of threshold voltage distribution due to random dopants: a 100 000-sample 3-D simulation study. IEEE Transactions on Electron Devices, 56 (10). pp. 2255-2263. ISSN 0018-9383 (doi:10.1109/TED.2009.2027973 )

Reid, D., Millar, C., Roy, G., Roy, S., and Asenov, A. (2009) Efficient simulation of 6σ VT distribution due to random descrete dopants. In: 10th International Conference on Ultimate Integration of Silicon, 2009. ULIS 2009. , 18-20 Mar 2009, Aachen, Germany.

Reid, D., Millar, C., Roy, G., Roy, S., and Asenov, A. (2009) Statistical enhancement of combined simulations of RDD and LER variability: what can simulation of a 10⁵ sample teach us? In: Proceedings of the 2009 IEEE International Electron Devices Meeting (IEDM), Baltimore, USA, 7-9 December 2009. IEEE Computer Society, pp. 657-660. ISBN 9781424456390

Reid, D., Millar, C., Roy, G., Roy, S., and Asenov, A. (2009) Understanding LER-induced statistical variability: a 35,000 sample 3D simulation study. In: European Solid State Device Research Conference, 2009. ESSDERC '09 , 14-18 Sep 2009, Athens, Greece.

2008

Sinnott, R.O. et al. (2008) Scalable, security-oriented solutions for nanoCMOS electronics. In: UK e-Science All Hands Meeting , 8-11 Sept 2008, Edinburgh, UK.

Harbulot, B., Berry, D., Davenhall, C., Jones, M., Millar, C., Roy, G., Sinnott, R.O., Stewart, G., and Asenov, A. (2008) A resource-oriented data management architecture for nanoCMOS electronics. In: UK e-Science All Hands Meeting, 8-11 Sept 2008, Edinburgh, UK.

Asenov, A. et al. (2008) Advanced simulation of statistical variability and reliability in nano CMOS transistors. In: IEDM 2008. IEEE International Electron Devices Meeting, 2008, 15-17 Dec 2008 , San Francisco, CA.

Bindu, B., Cheng, B., Roy, G., Wang, X., Roy, S., and Asenov, A. (2008) An efficient data sampling strategy for statistical parameter extraction of nano-MOSFETs. In: IEEE Workshop on Compact Modeling, 8 Sept 2008, Hakone, Japan.

Drysdale, T. D., Brown, A. R., Roy, G., Roy, S., and Asenov, A. (2008) Capacitance variability of short range interconnects. Journal of Computational Electronics, 7 (3). pp. 124-127. ISSN 1569-8025 (doi:10.1007/s10825-007-0154-6)

Kovac, U., Reid, D., Millar, C., Roy, G., Roy, S., and Asenov, A. (2008) Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET. Microelectronics Reliability, 48 (8-9). pp. 1572-1575. ISSN 0026-2714 (doi:10.1016/j.microrel.2008.06.027 )

Millar, C., Reid, D., Roy, G., Roy, S., and Asenov, A. (2008) Accurate statistical description of random dopant-induced threshold voltage variability. IEEE Electron Device Letters, 29 (8). pp. 946-948. ISSN 0741-3106 (doi:10.1109/LED.2008.2001030)

Reid, D., Millar, C., Asenov, A., Roy, S., Roy, G., Sinnott, R.O., and Stewart, G. (2008) Supporting statistical semiconductor device analysis using EGEE and OMII-UK middleware. In: EGEE User Conference, Feb 2008, Clermond Ferrand, France.

Reid, D., Millar, C., Roy, G., Roy, S., Sinnott, R.O., Stewart, G., and Asenov, A. (2008) Prediction of random dopant induced threshold voltage fluctuations in NanoCMOS transistors. In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices, 9-11 Sept 2008, Hakone, Japan. IEEE Computer Society, Piscataway, N.J., USA, pp. 21-24. ISBN 9781424417537

Reid, D., Millar, C., Roy, G., Roy, S., Sinnott, R.O., Stewart, G., and Asenov, A. (2008) An accurate statistical analysis of random dopant induced variability in 140,000 13nm MOSFET. In: Proceedings of the IEEE Silicon Nanoelectronics Workshop, 15-16 June 2008, Honolulu, Hawaii. IEEE Computer Society, Piscataway, N.J., USA. ISBN 9781424420711

Reid, D., Millar, C., Roy, S., Roy, G., Sinnott, R., Stewart, G., and Asenov, A. (2008) An accurate statistical analysis of random dopant induced variability in 140,00013nm MOSFETs. IEEE, pp. 79-80. ISBN 9781424420711

Sinnott, R.O. et al. (2008) Secure, performance-oriented data management for nanoCMOS electronics. In: Fourth IEEE International Conference on E-Science: 7-12 December 2008, Indiana, USA. IEEE Computer Society, Piscataway, N.J., USA, pp. 87-94.

Sinnott, R.O. et al. (2008) Integrating security solutions to support nanoCMOS electronics research. In: Proceedings of the 2008 International Symposium on Parallel and Distributed Processing with Applications: 10-12 December 2008, Sydney, NSW, Australia. IEEE Computer Society, Los Alamitos, USA, pp. 71-79. ISBN 9780769534718

2007

Sinnott, R.O., Asenov, A., Brown, A., Millar, C., Roy, G., Roy, S., and Stewart, G. (2007) Grid infrastructures for the electronics domain: requirements and early prototypes from an EPSRC pilot project. In: Cox, S.J. (ed.) Proceedings of the UK e-Science All Hands Meeting 2007, Nottingham, UK, 10th-13th September 2007. National e-Science Centre, Edinburgh. ISBN 9780955398834

Han, L., Asenov, A., Berry, D., Millar, C., Roy, G., Roy, S., Sinnott, R.O., and Stewart, G. (2007) Towards a grid-enabled simulation framework for nano-CMOS electronics. In: 3rd IEEE International Conference on e-Science and Grid Computing, 10-13 Dec 2007, Bangalore, India.

2006

Alexander, C, Roy, G, and Asenov, A (2006) Increased intrinsic parameter fluctuations through ab initio Monte Carlo simulations in nano-scaled MOSFETs. In: International Electron Devices Meeting 2006, IEDM, San Fransisco, CA, USA.

Asenov, A, Brown, AR, Roy, G, Alexander, C, and Martinez, A (2006) Simulation of Atomic Scale Effects and Fluctuations in nano-scale CMOS. In: International Conference on Solid State Devices and Materials. (SSDM 2006)., Yokohama,Japan.

Brown, AR, Roy, G, and Asenov, A (2006) Impact of Fermi level pinning at polysilicon gate grain boundaries on nano-MOSFET variability:A 3-D simulation study. In: 34th European Solid State Devices Research Conference, Montreux, Switzerland.

Cheng, B, Roy, S, Roy, G, Brown, AR, and Asenov, A (2006) Design consideration of 6-T SRAM towards the End Of Bulk CMOS Technology scaling subjected to randon dopant fluctuations. In: 34th European Solid State Devices Research Conference, Montreux, Switzerland.

Markov, S, Brown, AR, Cheng, B, Roy, G, Roy, S, and Asenov, A (2006) 3D statistical simulation of gate leakage fluctutations due to combined interface roughness and random dopants. In: International Conference on Solid State Devices and Materials. (SSDM 2006)., Yokohama,Japan.

2005

Darby, J., Muscatelli, V.A., and Roy, G. (2005) Fiscal consolidation and decentralisation: A tale of two tiers. Fiscal Studies, 26 . pp. 169-195.

Roy, G, Adamu-Lema, F, Brown, AR, Roy, S, and Asenov, A (2005) Intrinsic parameter fluctuations in conventional MOSFETs until the end of the ITRS. In: New Phenomena in Mesoscopic Structures - 7 (NPMS) and the fifth in the series of Surfaces and Interfaces of Mesoscopic Devices (SIMD), NPMS-7/SIMD-5, Maui, Hawaii.

Roy, G, Adamu-Lema, F, Brown, AR, Roy, S, and Asenov, A (2005) Simulation of combined sources of intrinsic parameter fluctuations in 'real' 35nm MOSFET. In: European Solid-State Device Research Conference 2005 - ESSDERC2005, Grenoble, France.

2004

Adamu-Lema, F, Roy, S, Brown, AR, Asenov, A, and Roy, G (2004) Intrinsic parameter fluctuations in conventional MOSFETs at the scaling limit : a statistical study. In: International workshop on Computational Electronics, IWCE-10, West Lafayette, USA.

Asenov, A, Roy, G, Alexander, C, Brown, AR, Watling, JR, and Roy, S (2004) Quantum mechanical and transport effects in resolving discrete charges in nano-CMOS device simulation. In: 4th IEEE Conference on Nanotechnology 2004, Munich, Germany.

2003

Cheng, B, Roy, S, Roy, G, and Asenov, A (2003) Integrating 'atomistic' intrinsic parameter fluctuations into compact model circuit analysis. In: ESSDERC 2003 - European Solid-State Device Research Conference, Estoril, Portugal.

Roy, G, Brown, AR, Asenov, A, and Roy, S (2003) Bipolar quantum corrections in resolving individual dopants in atomistic, intrinsic parameter fluctuations into compact model circuit analysis. In: NPMS-6/SIMD-4 Sixth International Conference on New Phenomena in Mesoscopic Systems, and Fourth International Conference on Surfaces and Interfaces of Mesoscopic Devices, Maui, Hawaii, Maui, Hawaii.

Roy, G, Brown, AR, Asenov, A, and Roy, S (2003) Quantum aspects of resolving discrete charges in atomistic device simulation. In: International Workshop on Computational Electronics - IWCE 9, Rome, Italy.

Roy, S, Cheng, B, Roy, G, and Asenov, A (2003) A methodology for introducing atomistic parameter fluctutations into compact device models for circuit simulation. In: International Workshop on Computational Electronics - IWCE 9, Rome, Italy.