Dr Xu Li

  • Research Associate (Electronic and Nanoscale Engineering)

Publications

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Number of items: 138.

2017

Thayne, I., Li, X., Millar, D., Fu, Y.-C. and Peralagu, U. (2017) Plasma Processing of III-V Materials for Energy Efficient Electronics Applications. In: Advanced Etch Technology for Nanopatterning VI, San Jose, CA, USA, 27 Feb - 01 Mar 2017, 101490R. (doi:10.1117/12.2257863)

Millar, D., Peralagu, U. , Li, X., Fu, Y.-C., Gaspar, G., Hurley, P. and Thayne, I. (2017) Improving the electrical properties of the In0.3Ga0.7Sb-Al2O3 interface via in-situ H2 plasma and TMA exposure. In: 20th Conference on Insulating Films on Semiconductors (INFOS 2017), Potsdam, Germany, 27-30 Jun 2017, (Accepted for Publication)

Eblabla, A., Benakaprasad, B., Li, X., Wallis, D.J., Guiney, J. and Elgaid, K. (2017) Low-loss MMICs viable transmission media for GaN-on-low resistivity silicon technology. IEEE Microwave and Wireless Components Letters, 27(1), pp. 10-12. (doi:10.1109/LMWC.2016.2629964)

Eblabla, A. M., Li, X., Wallis, D. J., Guiney, I. and Elgaid, K. (2017) GaN on low resistivity silicon THz high -Q passive device technology. IEEE Transactions on Terahertz Science and Technology, 7(1), pp. 93-97. (doi:10.1109/TTHZ.2016.2618751)

Benakaprasad, B., Eblabla, A., Li, X., Thayne, I., Wallis, D.J., Guiney, I., Humphreys, C. and Elgaid, K. (2017) Terahertz Microstrip Elevated Stack Antenna Technology on GaN-on-Low Resistivity Silicon Substrates for TMIC. In: 46th European Microwave Conference, London, 3-7 Oct 2016, (doi:10.1109/EuMC.2016.7824367)

2016

Cho, S.-J., Li, X., Floros, K., Hamakumara, D., Ignatova, O., Moran, D., Humphreys, C.J. and Thayne, I. (2016) Low off-state Leakage Currents in AlGaN/GaN High Electron Mobility Transistors By Employing A Highly Stressed SiNx Surface Passivation Layer. 19th Workshop on Dielectrics in Microelectronics (WoDIM), Aci Castello, Catania, Italy, 27-30 Jun 2016.

Millar, D., Peralagu, U. , Fu, Y.-C., Li, X., Steer, M. and Thayne, I. (2016) Initial Investigation on the Impact of In Situ Hydrogen Plasma Exposure to the Interface Between Molecular Beam Epitaxially Grown P-Ga0.7In0.3Sb (100) and Thermal Atomic Layer Deposited (ALD) Al2O3. In: 19th Workshop on Dielectrics in Microelectronics (WoDIM), Aci Castello, Catania, Italy, 27-30 Jun 2016,

Oxland, R. et al. (2016) InAs FinFETs with Hfin = 20 nm fabricated using a top-down etch process. IEEE Electron Device Letters, 37(3), pp. 261-264. (doi:10.1109/LED.2016.2521001)

Benakaprasad, B., Eblabla, A., Li, X., Thayne, I., Wallis, D.J., Guiney, I., Humphreys, C. and Elgaid, K. (2016) Terahertz Microstrip Single Patch Antenna Technology on GaN-on-Low Resistivity Silicon Substrates for TMIC. In: IET Colloquium on Antennas, Wireless and Electromagnetics, Glasgow, UK, 26 May 2016, (Unpublished)

Benakaprasad, B., Eblabla, A., Li, X., Thayne, I., Wallis, D., Guiney, I., Humphreys, C. and Elgaid, K. (2016) Terahertz Monolithic Integrated Circuits (TMICs) Array Antenna Technology On GaN-on-Low Resistivity Silicon Substrates. In: 41st International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2016), Copenhagen, Denmark, 25-30 Sept 2016, (doi:10.1109/IRMMW-THz.2016.7758488)

Eblabla, A., Benakaprasad, B., Li, X., Wallis, D.J., Guiney, I. and Elgaid, K. (2016) High Frequency Active and Passives Devices using GaN on Low Resistivity Silicon. In: ARMMS RF & Microwave Society Conference, Milton Common Nr Thame, UK, 18-19 Apr 2016, (Unpublished)

Eblabla, A., Li, X., Thayne, I., Wallis, D.J., Guiney, I. and Elgaid, K. (2016) MMIC-Compatible Microstrip Technology for GaN-HEMTs on Low Resistivity Silicon Substrate. In: International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016, (Unpublished)

Eblabla, A., Li, X., Wallis, D. J., Guiney, I. and Elgaid, K. (2016) GaN-based HEMTs on Low Resistivity Silicon Technology for Microwave Applications. In: 8th Wide Bandgap Semiconductor and Components Workshop, Harwell. UK, 12-13 Sept 2016,

Floros, K., Li, X., Guiney, I., Cho, S.-J., Ternent, G., Hemakumara, D., Wasige, E., Moran, D.A.J., Humphries, C.J. and Thayne, I.G. (2016) A Dual Barrier InAlN/AlGaN/GaN HEMT on Si Substrate with Pt Based Gates. In: 9th International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016, (Unpublished)

Floros, K. et al. (2016) Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

Li, X., Fu, Y.-C., Millar, D.A.J., Peralagu, U. , Steer, M. and Thayne, I.G. (2016) The Impact of an HBr/Ar Atomic Layer Etch (ALE) Process for InGaAs Vertical Nanowire Diameter Reduction on the Interface Between InGaAs and In-situ ALD Deposited HfO2. In: 47th IEEE Semiconductor Interface Specialists Conference (SISC 2016), San Diego, CA, USA, 8-10 Dec 2016, (Accepted for Publication)

Li, X., Floros, K., Cho, S.-J., Guiney, I., Moran, D. and Thayne, I. G. (2016) Development of an Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation in Chlorine Gas and its Argon Plasma Removal for Precision Nanometer Scale Thin Layer Etch in GaN-Based Power Device Fabrications. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

Li, X., Floros, K., Cho, S.-J., Guiney, I., Moran, D. and Thayne, I. G. (2016) An Atomic Layer Etch Process Based on a Cycled Procedure of Chlorination in Cl2 and Argon Plasma Removal of Chlorides for GaN Based Device Fabrication. In: 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 9th International Conference on Plasma-Nano Technology & Science (ISPlasma2016 / IC-PLANTS2016), Nagoya, Japan, 6-10 March 2016,

Li, X., Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. 42nd International Conference on Micro and Nano Engineering (MNE 2016), Vienna, Austria, 19-23 Sept 2016. (Unpublished)

Li, X., Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. In: UK Semiconductor Conference, Sheffield, UK, 6-7 July 2016, (Accepted for Publication)

2015

Fu, Y.-C., Peralagu, U. , Li, X., Ignatova, O., Millar, D. A. J., Steer, M., Droopad, R. and Thayne, I. (2015) First Demonstration of Cluster Tool Based ICP Etching of (100) and (110) InGaAs MOSCAPs Followed by In-Situ ALD Deposition of HfO2 Including Nitrogen and Hydrogen Plasma Passivation for Non-Planar III-V MOSFETs. In: 46th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 02-05 Dec 2015,

Cho, S.J., Roberts, J., Guiney, I., Li, X., Ternent, G., Floros, K., Humphreys, C.J., Chalker, P. and Thayne, I.G. (2015) A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor. Microelectronic Engineering, 147, pp. 277-280. (doi:10.1016/j.mee.2015.04.067)

Peralagu, U. et al. (2015) (Invited) towards a vertical and damage free post-etch InGaAs fin profile: dry etch processing, sidewall damage assessment and mitigation options. ECS Transactions, 69(5), pp. 15-36. (doi:10.1149/06905.0015ecst)

Eblabla, A., Li, X., Thayne, I., Wallis, D. J., Guiney, I. and Elgaid, K. (2015) High performance GaN high electron mobility transistors on low resistivity silicon for X-Band applications. IEEE Electron Device Letters, 36(9), pp. 899-901. (doi:10.1109/LED.2015.2460120)

Wang, S.-W. et al. (2015) Field-effect mobility of InAs surface channel nMOSFET with low Dit scaled gate-stack. IEEE Transactions on Electron Devices, 62(8), pp. 2429-2436. (doi:10.1109/TED.2015.2445854)

Cao, M., Li, X., Missous, M. and Thayne, I. (2015) Nanoscale molybdenum gates fabricated by low damage inductively coupled plasma SF6/C4F8 etching suitable for high performance compound semiconductor transistors. Microelectronic Engineering, 140, pp. 56-59. (doi:10.1016/j.mee.2015.06.003)

Eblabla, A., Li, X., Thayne, I., Wallis, D. J., Guiney, I. and Elgaid, K. (2015) Effect Of AlN Spacer In The Layer Structure On High Rf Performance GaN-Based HEMTs On Low Resistivity Silicon At K-Band Application. In: 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 Aug - 4 Sept 2015, (Unpublished)

Fu, Y.-C., Peralagu, U. , Ignatova, O., Li, X., Droopad, R., Thayne, I., Lin, J., Povey, I., Monaghan, S. and Hurley, P. (2015) Energy-Band Structure of Atomic Layer Deposited Al2O3 & Sulphur Passivated Molecular Beam Epitaxially Grown (110) In0.53Ga0.47As Surfaces. In: 11th Conference on PhD Research in Microelectronics and Electronics (IEEE PRIME 2015), Glasgow, UK, 29 June - 2 July 2015,

Fu, Y.-C., Peralagu, U. , Ignatova, O., Li, X., Lin, J., Povey, I., Monaghan, S., Droopad, R., Hurley, P. and Thayne, I. (2015) Energy-band parameter of atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces. In: 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Glasgow, UK, 29 Jun - 02 Jul 2015, pp. 346-348. (doi:10.1109/PRIME.2015.7251406)

Li, X., Floros, K., Hemakumara, D., Moran, D. and Thayne, I. G. (2015) Realisation of Low Annealing Temperature and Low Resistance Ohmic Contacts forAlGaN/GaN-Based Power Devices Via SiH4 Inductively Coupled Plasma Treatment. In: UK Semiconductor Conference, Sheffield, UK, 1-2 July 2015,

Li, X., Floros, K., Ternent, G., Al-Khalidi, A., Wasige, E. and Thayne, I. G. (2015) Effect of SiH4 Inductively Coupled Plasma Surface Treatment On Low Temperature and Low Resistance Ohmic Contact for AlGaN/GaN-Based Power Device. In: 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 8th International Conference on Plasma-Nano Technology & Science (ISPlasma2015 / IC-PLANTS2015), Nagoya, Japan, 26-31 March 2015,

Zhou, H., Li, X. and Fu, Y. (2015) Low-Leakage Current and Damage-Free SiNx Deposition at 30oC By Inductively Coupled Plasma with Neutral Beams by Neutralization Grid Plate. In: 59th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN 2015), San Diego, CA, USA, 26-29 May 2015,

2014

Peralagu, U. , Li, X., Ignatova, O., Steer, M., Povey, I., Hurley, P. and Thayne, I. (2014) Demonstration of III-V fins with vertical sidewalls using Cl2/CH4/H2/O2 dry etch chemistry in conjunction with digital etching for recovery of etch damage. In: 45th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, 10 - 13 Dec 2014,

Brown, R., Macfarlane, D., Al-Khalidi, A., Li, X., Ternent, G., Zhou, H., Thayne, I. and Wasige, E. (2014) A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT. IEEE Electron Device Letters, 35(9), pp. 906-908. (doi:10.1109/LED.2014.2334394)

Cao, M., Li, X., Ferguson, S., Thoms, S., Macintyre, D. and Thayne, I. (2014) A simple silicon compatible 40nm electroplated copper T-gate process. Microelectronic Engineering, 121, pp. 153-155. (doi:10.1016/j.mee.2014.05.007)

Fu, Y.-C., Peralagu, U. , Lin, J., Povey, I., Li, X., Ignatova, O., Monaghan, S., Droopad, R., Hurley, P. and Thayne, I. (2014) The impact of forming gas annealing on the properties of interfaces between atomic layer deposited Al2O3 and sulphur passivated molecular beam epitaxially grown (110) p- and n-type In0.53Ga0.47As surfaces. In: 18th Workshop on Dielectrics in Microelectronics (WoDIM), Kinsale, Co Cork, Ireland, 9-11 Jun 2014,

Cao, M., Li, X. and Thayne, I. (2014) An Anisotropic Low Power, Low DC Bias, SF6/C4F8 Inductively Coupled Plasma Etch Process of Molybdenum with Critical Dimension of 30 nm Suitable for Compound Semiconductor Devices. In: 58th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN 2014), Washington, DC, USA, 27-30 May 2014,

Cao, M., Li, X. and Thayne, I. (2014) A low damage inductively coupled plasma etch process of molybdenum with critical dimension of 30 nm suitable for compound semiconductor devices. In: UK Semiconductors 2014, Sheffield, UK, 9-10 July 2014,

Cho, S.-J., Roberts, J.W., Li, X., Ternent, G., Floros, K., Thayne, I., Chalker, P. and Wasige, E. (2014) Effect of O2 plasma pre-treatment in Al2O3 passivation using atomic-layer-deposited on GaN based metal-oxide-semiconductor capacitor. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014, p. 184.

Li, X., Ternent, G., Al-Khalidi, A., Floros, K., Wasige, E. and Thayne, I. G. (2014) Low Temperature Ohmic Contacts to AlGaN/GaN HFETs on Si Substrates Using SiCl4 Based RIE Recess Etching. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014, p. 176.

Li, X., Ternent, G., Al-Khalidi, A., Floros, K., Wasige, E. and Thayne, I. (2014) Low temperature Ohmic contacts to AlGaN/GaN HFETs on Si substrates using SiCl4based RIE recess etching. In: UK Semiconductors 2014, Sheffield, UK, 9-10 July 2014,

2013

Li, X., Ignatova, O., Cao, M., Peralagu, U. , Steer, M., Mirza, M., Zhou, H. and Thayne, I. (2013) 10 nm vertical In0.53Ga0.47As line etching process for III-V MOSFET fabrication by using inductively coupled plasma (ICP) etcher in Cl2/CH4/H2 chemistry. In: 26th International Microprocesses and Nanotechnology Conference (MNC), Royton Sapporo, Hokkaido, Japan, 5-8 Nov 2013,

Cao, M., Li, X., Ferguson, S., Thoms, S., Macintyre, D. and Thayne, I. (2013) A simple silicon compatible 40 nm electroplated Copper T‐gate process. In: MNE2013: 39th International Conference on Micro and Nano Engineering, London, UK, 16-19 Sept. 2013,

Chang, S.W. et al. (2013) InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V). In: IEEE International Electronic Devices Meeting (IEDM2013), Washington, D.C., 9-11 Dec 2013, 16.1.1-16.1.4. (doi:10.1109/IEDM.2013.6724639)

Ignatova, O. et al. (2013) Towards vertical sidewalls in III-V FinFETs: dry etch processing and its associated damage on the electrical and physical properties of (100)-oriented InGaAs. In: 44th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 5-7 Dec 2013, pp. 167-168.

Peralagu, U. , Ignatova, O., Li, X., Steer, M., Povey, I.M., Hurley, P.K. and Thayne, I.G. (2013) Optimisation of sidewalls in III-V FinFETs. In: UK Semiconductors 2013, Sheffield, UK, 3 - 4 Jul 2013,

2012

Mirza, M. M., Zhou, H., Velha, P., Li, X., Docherty, K. E., Samarelli, A., Ternent, G. and Paul, D. J. (2012) Nanofabrication of high aspect ratio (∼50:1) sub-10 nm silicon nanowires using inductively coupled plasma etching. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 30(6), 06FF02. (doi:10.1116/1.4755835)

Oxland, R. et al. (2012) An ultralow-resistance ultrashallow metallic source/drain contact scheme for III-V NMOS. IEEE Electron Device Letters, 33(4), pp. 501-503. (doi:10.1109/LED.2012.2185919)

Greer, A. I. M., Seunarine, K., Khokhar, A. Z., Li, X., Moran, D. A. J. and Gadegaard, N. (2012) Direct Nano-Patterning of Commercially Pure Titanium with Ultra-Nanocrystalline Diamond Stamps. In: SBDD XVII Diamond Workshop, Hasselt, Belgium, March 2012,

Greer, A.I.M., Seunarine, K., Khokhar, A., Li, X., Moran, D. and Gadegaard, N. (2012) Direct nanopatterning of commercially pure titanium with ultra-nanocrystalline diamond stamps. Physica Status Solidi A: Applications and Materials Science, 209(9), pp. 1721-1725. (doi:10.1002/pssa.201200057)

Li, X., Zhou, H., Hill, R.J.W., Holland, M. and Thayne, I. (2012) A low damage etching process of sub-100 nm platinum gate line for III-V metal-oxide-semiconductor field-effect transistor fabrication and the optical emission spectrometry of the inductively coupled plasma of SF6/C4F8. Japanese Journal of Applied Physics, 51(1), (doi:10.1143/JJAP.51.01AB01)

Mirza, M. M., Zhou, H., Velha, P., Li, X., Docherty, K. E., Samarelli, A., Ternent, G. and Paul, D. J. (2012) Nanofabrication of high aspect ratio (˜50:1) sub-10 nm silicon nanowires using inductively coupled plasma etching. In: EIPBN 2012: The 56th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication, Waikoloa,HI USA, 29 May - 01 June 2012,

2011

Thayne, I., Bentley, S., Holland, M., Jansen, W., Li, X., Macintyre, D., Thoms, S., Shin, B., Ahn, J. and McIntyre, P. (2011) III–V nMOSFETs – some issues associated with roadmap worthiness (invited). Microelectronic Engineering, 88(7), pp. 1070-1075. (doi:10.1016/j.mee.2011.03.100)

Bentley, S. et al. (2011) Electron mobility in surface- and buried- channel flatband In0.53Ga0.47As MOSFETs with ALD Al2O3 gate dielectric. IEEE Electron Device Letters, 32(4), pp. 494-496. (doi:10.1109/LED.2011.2107876)

Li, X., Zhou, H., Hill, R. J.W., Holland, M. and Thayne, I. G. (2011) A low damage etching process of sub-100 nm platinum gate line for III-V MOSFET fabrication and the optical emission spectrometry of the inductively coupled plasma of SF6/C4F8. In: ISPlasma 2011: 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, Nagoya, Japan, 6-9 March 2011,

2010

Oxland, R. K., Li, X., Ferguson, S., Bentley, S. and Thayne, I. G. (2010) Copper-plated 50 nm T-gate fabrication. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 28(6), C6P7. (doi:10.1116/1.3501346)

Oxland, R.K., Li, X., Ferguson, S., Bentley, S. and Thayne, I. (2010) Copper–plated 50 nm T–gate fabrication. In: 54th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN 2010), Anchorage, AK, USA, 1-4 Jun 2010, pp. 15-24.

Taking, S. et al. (2010) Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium. Electronics Letters, 46(4), pp. 301-302. (doi:10.1049/el.2010.2781)

Li, X., Bentley, S., Holland, M.C., Zhou, H., Thoms, S., Macintyre, D.S. and Thayne, I.G. (2010) A low damage fully self-aligned gate-last process for fabricating sub-100 nm gate length enhancement mode GaAs MOSFETs. In: 54th International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication, Anchorage, USA, June 2010,

Li, X., Bentley, S., McLelland, H., Holland, M., Zhou, H., Thoms, S., Macintyre, D. and Thayne, I. (2010) Low damage fully self-aligned replacement gate process for fabricating deep sub-100 nm gate length GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 28(6), C6L1. (doi:10.1116/1.3501355)

Li, X., Zhou, H., Hill, R.J.W., Longo, P., Holland, M. and Thayne, I.G. (2010) Dry etching device quality high-kappa GaxGdyOz gate oxide in SiCl4 chemistry for low resistance ohmic contact realisation in fabricating III-V MOSFETs. Microelectronic Engineering, 87(5-8), pp. 1587-1589. (doi:10.1016/j.mee.2009.11.011)

Taking, S., Banerjee, A., Zhou, H., Li, X., MacFarlane, D., Dabiran, A. and Wasige, E. (2010) Thin Al2O3 formed by thermal oxidation of evaporated aluminium for AlN/GaN MOS-HEMT technology. In: UKNC Conference, Cork, Ireland, 12-13 Jan 2010,

2009

Hill, R.J.W. et al. (2009) Deep sub-micron and self-aligned flatband III–V MOSFETs. In: Device Research Conference, 2009 (DRC 2009), University Park, PA, USA, 22-24 Jun 2009, pp. 251-252. (doi:10.1109/DRC.2009.5354900)

Bentley, S., Li, X., Moran, D.A.J. and Thayne, I.G. (2009) Two methods of realising 10 nm T-gate lithography. Microelectronic Engineering, 86(4-6), pp. 1067-1070. (doi:10.1016/j.mee.2008.12.029)

Freescale Semiconductor, Inc. (2009) III-V MOSFET Fabrication and Device (Fabrication process of e.g. group III-V MOSFET for nano complementary metal oxide semiconductor application, involves heat treating metal contact structure to produce alloy region within semiconductor substrate). .

Li, X., Hill, R.J.W., Longo, P., Holland, M.C., Zhou, H., Thoms, S., Macintyre, D.S. and Thayne, I.G. (2009) 100 nm gate length enhancement mode GaAs MOSFETs fabricated by a fully self-aligned process. In: UK Compound Semiconductor Conference 2009, Sheffield, UK, 1-2 July 2009,

Li, X., Hill, R.J.W., Longo, P., Holland, M.C., Zhou, H., Thoms, S., Macintyre, D.S. and Thayne, I.G. (2009) Fully self-aligned process for fabricating 100 nm gate length enhancement mode GaAs MOSFETs. In: EIPBN 2009: The 53rd International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication, Marco Island, Florida, USA, 24-29 May 2009,

Li, X., Hill, R.J.W., Longo, P., Holland, M.C., Zhou, H., Thoms, S., Macintyre, D.S. and Thayne, I.G. (2009) Fully self-aligned process for fabricating 100 nm gate length enhancement mode GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27(6), pp. 3153-3157. (doi:10.1116/1.3256624)

Thayne, I.G. et al. (2009) Review of current status of III-V MOSFETs. ECS Transactions, 19(5), pp. 275-286. (doi:10.1149/1.3119552)

Thayne, I., Li, X., Jansen, W., Ignatova, O., Bentley, S., Zhou, H., Macintyre, D., Thoms, S. and Hill, R. (2009) Development of III-V MOSFET process modules compatible with silicon ULSI manufacture. ECS Transactions, 25(7), pp. 385-395. (doi:10.1149/1.3203975)

2008

Hill, R., Moran, D., Li, X., Macintyre, D.S., Thoms, S., Asenov, A., Droopad, R., Passlack, M. and Thayne, I. (2008) III-V MOSFETs: a possible solution for sub-22 nm CMOS nFETs. In: 17th European Heterostructure Technology Workshop, Venice, Italy, Nov 2008,

Li, X., Zhou, H., Hill, R., Holland, M. and Thayne, I.G. (2008) Low damage inductively coupled plasma etching of sub-100 nm platinum gate line in SF6/C4F8 for III-V MOSFET fabrication process. In: 34th International Conference on Micro- and Nano-Engineering (MNE 2008), Athens, Greece, 15-18 September 2008,

Hill, R.J.W. et al. (2008) 1 μm gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737μS/μm. Electronics Letters, 44, pp. 498-500. (doi:10.1049/el:20080470)

Bentley, S., Li, X., Moran, D. A. J. and Thayne, I. G. (2008) Fabrication of 22 nm T-gates for HEMT applications. Microelectronic Engineering, 85(5-6), pp. 1375-1378. (doi:10.1016/j.mee.2008.01.058)

Hill, R.J.W., Moran, D.A.J., Li, X., Zhou, H., Macintyre, D.S., Thoms, S., Asenov, A. and Thayne, I.G. (2008) Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics. In: Proceedings of the IEEE Silicon Nanoelectronics Workshop, 15-16 June 2008, Honolulu, Hawaii. IEEE Computer Society: Piscataway, N.J., USA. ISBN 9781424420711 (doi:10.1109/SNW.2008.5418447)

Kalna, K. et al. (2008) III-V MOSFETs for digital applications with silicon co-integration. In: 7th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice, Slovakia, 12-16 October 2008, pp. 39-46. ISBN 9781424423255 (doi:10.1109/ASDAM.2008.4743354)

Li, X., Hill, R.J.W., Zhou, H. P., Wilkinson, C.D.W. and Thayne, I.G. (2008) A low damage Si3N4 sidewall spacer process for self-aligned sub-100 nm III-V MOSFETs. Microelectronic Engineering, 85(5-6), pp. 996-999. (doi:10.1016/j.mee.2007.12.064)

Li, X., Zhou, H.P., Abrokwah, J., Zurcher, P., Rajagopalan, K., Liu, W., Gregory, R., Passlack, M. and Thayne, I.G. (2008) Low damage ashing and etching processes for ion implanted resist and Si3N4 removal by ICP and RIE methods. Microelectronic Engineering, 85(5-6), pp. 966-968. (doi:10.1016/j.mee.2007.12.056)

2007

Hill, R.J.W. et al. (2007) Enhancement-mode GaAs MOSFETs with an In0.3 Ga0.7As channel, a mobility of over 5000 cm2/V ·s, and transconductance of over 475 μS/μm. IEEE Electron Device Letters, 28(12), pp. 1080-1082. (doi:10.1109/LED.2007.910009)

Li, X., Zhou, H., Hill, R.J.W., Wilkinson, C.D.W. and Thayne, I.G. (2007) Dry etching of a device quality high-k GaxGdyOz gate oxide in CH4/H2–O2 chemistry for the fabrication of III–V MOSFETs. Microelectronic Engineering, 84(5-8), pp. 1124-1127. (doi:10.1016/j.mee.2007.01.045)

Hill, R.J.W., Moran, D.A.J., Li, X., Zhou, H., Macintyre, D., Thoms, S., Droopad, R., Passlack, M. and Thayne, I.G. (2007) 180nm metal gate, high-k dielectric, implant-free III--V MOSFETs with transconductance of over 425 μS/μm. Electronics Letters, 43, pp. 543-545. (doi:10.1049/el:20070427)

Passlack, M. et al. (2007) High mobility III-V MOSFETs for RF and digital applications. In: IEEE International Electron Devices Meeting (IEDM 2007), Washington DC, USA, 10-12 December 2007, pp. 621-624. ISBN 9781424415083 (doi:10.1109/IEDM.2007.4419016)

Hill, R. J. W., Holland, M., Li, X., Macintyre, D., Moran, D., Stanley, C. R., Thoms, S., Zhou, H. and Thayne, I. G. (2007) Recent Developments in III-V MOSFETs Technology. In: 15th International Symposium Nanostructures: Physics and Technology, Novosibirsk, Russia, 25-29 June 2007, pp. 134-136. ISBN 9785936340222

Hill, R.J.W., Holland, M.C., Li, X., Macintyre, D.S., Moran, D.A.J., Stanley, C.R., Thoms, S. and Thayne, I.G. (2007) Enhancement Mode, Implant Free, Metal Gate, High-K Dielectric, III-V MOSFETs. In: 2007 8th European Workshop on Ultimate Integration of Silicon (ULIS), Leuven, Belgium, 15-16 Mar 2007, pp. 129-132.

Moran, D. A. J. et al. (2007) III-V Enhancement Mode MOSFETs for Digital Applications. In: IBM MRC Oxide Workshop, Zurich, Switzerland, 25-27 June 2007,

Moran, D. A. J. et al. (2007) High Performance Enhancement-Mode III-V MOSFETs. In: UK Compound Semiconductor Conference 2007, Sheffield, UK, 2007,

Moran, D.A.J. et al. (2007) High Performance Enhancement Mode III-V MOSFETs. IBM Workshop on Advanced Oxides, Zurich, Switzerland, June 2007.

Moran, D.A.J. et al. (2007) Sub-micron, Metal Gate, High-к Dielectric, Implant-free, Enhancement-mode III-V MOSFETs. In: 37th European Solid State Device Research Conference (ESSDERC 2007), Munich, Germany, 11-13 September 2007, pp. 466-469. ISBN 9781424411245 (doi:10.1109/ESSDERC.2007.4430979)

Passlack, M. et al. (2007) High Mobility III-V MOSFET Technology. In: 7th Topical Workshop on Heterostructure Microelectronics (TWHM 2007), Chiba, Japan, 21-24 Aug 2007,

Passlack, M. et al. (2007) High mobility III-V MOSFET Technology. In: CS MANTECH Conference, Austin, TX, USA, 14-17 May 2007,

Rajagopalan, K. et al. (2007) Enhancement Mode n-MOSFET with High-κ Dielectric on GaAs Substrate. In: IEEE 65th Annual Device Research Conference, South Bend, Indiana, USA, 18-20 June 2007, pp. 205-206. ISBN 9781424411023 (doi:10.1109/DRC.2007.4373719)

Thayne, I. G. et al. (2007) High Performance Enhancement Mode III-V MOSFETs for Silicon Co-Integration. In: Silicon Nanoelectronics Workshop, Kyoto, Japan, 10-11 June 2007,

Thayne, I.G. et al. (2007) Recent Progress in III-V MOSFETs. In: UK Condensed Matter and Material Physics Conference, Leicester, UK, April 2007,

2006

Li, X., Zhou, H., Wilkinson, C. D.W. and Thayne, I. G. (2006) Optical emission spectrometry of plasma in low-damage sub-100 nm tungsten gate reactive ion etching process for compound semiconductor transistors. Japanese Journal of Applied Physics, 45(Pt.1), pp. 8364-8369. (doi:10.1143/JJAP.45.8364)

Li, X., Cao, X., Zhou, H., Wilkinson, C.D.W., Thoms, S., Macintyre, D., Holland, M. and Thayne, I. (2006) 30 nm Tungsten gates etched by a low damage ICP etching for the fabrication of compound semiconductor transistors. Microelectronic Engineering, 83, pp. 1152-1154. (doi:10.1016/j.mee.2006.01.073)

Li, X., Cao, X., Zhou, H., Wilkinson, C.D.W., Thoms, S., Macintyre, D.S., Holland, M.C. and Thayne, I.G. (2006) 30 nm tungsten gates etched by a low damage ICP etching for the fabrication of compound semiconductor transistors. Microelectronic Engineering, 83(4-9), pp. 1152-1154. (doi:10.1016/j.mee.2006.01.073)

Hill, R.J.W., Li, X., Moran, D.A.J., Zhou, H. and Thayne, I.G. (2006) A Low Damage Subtractive Ohmic Contact Process for III-V Mosfets. In: UK III-V Compound Semiconductors 2006, Sheffield, UK,

Li, X., Cao, X., Zhou, H., Wilkinson, C.D.W., Thoms, S., Macintyre, D., Holland, M. and Thayne, I.G. (2006) A low damage RIE process for the fabrication of compound semiconductor based transistors with sub-100 nm tungsten gates. Microelectronic Engineering, 83(4-9), pp. 1159-1162. (doi:10.1016/j.mee.2006.01.074)

Li, X., Hill, R., Zhou, H., Wilkinson, C.D.W., Holland, M. and Thayne, I.G. (2006) GaxGdyOz Dry Etching Processes for the Fabrication of III-V MOSFET. In: UK III-V Compound Semiconductors 2006, Sheffield, UK,

Li, X., Hill, R., Zhou, H., Wilkinson, C.D.W. and Thayne, I.G. (2006) A low damage RIE SiN sidewall spacer process for self-aligned sub-100nm III-V MOSFETs. In: UK III-V Compound Semiconductors 2006, Sheffield, UK,

Li, X., Zhou, H., Cao, X., Wilkinson, C.D.W. and Thayne, I.G. (2006) Low damage dry etching processes for the fabrication of compound semiconductor based transistors with sub-100nm tungsten gates. In: UK III-V Compound Semiconductors 2006, Sheffield, UK,

Li, X., Zhou, H., Wilkinson, C. D.W. and Thayne, I. G. (2006) Optical Emission Spectrometry of Plasma in Low-Damage Sub-100 Nm Tungsten Gate Reactive Ion Etching Process for Compound Semiconductor Transistors. 6th International Conference on Reactive Plasmas and 23rd Symposium on Plasma Processing (ICRP-6/SPP-23), 24-27 Jan 2006. pp. 8364-8369.

Thayne, I.G. et al. (2006) III-V MOSFETs for Digital Applications: An Overview. In: UK III-V Compound Semiconductors 2006, Sheffield, UK,

2005

Cao, X. et al. (2005) Low damage sputter deposition of tungsten for decanano compound semiconductor transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 23(6), pp. 3138-3142. (doi:10.1116/1.2127937)

Li, X., Elgaid, K., McLelland, H. and Thayne, I.G. (2005) Surface mass spctrometric analysis of SiCl4/SiF4/O-2 dry etch gate recessed 120 nm T-gate GaAs pHEMTs. Microelectronic Engineering, 78-79, pp. 233-238. (doi:10.1016/j.mee.2004.12.032)

2003

Li, X., Elgaid, K., McLelland, H. and Thayne, I. G. (2003) A Novel Single Step Sol-Gel Process for Silica on Silicon PLC's. In: 14th International Conference on Integrated Optics and Optical Fibre Communication, Rimini, Italy, 22-24 Sept 2003,

Rehman, H.-u., Capecchi, S., Li, X., Ou, D. and Suyal, N. (2003) A Novel Single Step Sol Gel Process for Silica on Silicon Planar Lightwave Circuits. In: European Congress on Advanced Materials and Processes (EUROMAT 2003), Lausanne, Switzerland, 1-5 Sept 2003,

2002

McEwan, I., Suyal, N., Li, X., Grant, A., Layet, B., Rodden, G. and Tooley, F. (2002) Photopolymer Tunable AWG Filter. In: 28th European Conference on Optical Communication, Copenhagen, Denmark, 8-12 Sept 2002,

2001

Li, X., Elgaid, K., McLelland, H. and Thayne, I.G. (2001) Effects of pressure and capping layer thickness on sub-micron T-gate recess etching of GaAs p-HEMTs by SiCl4/SiF4/O2 reactive ion etch. Microelectronic Engineering, 57-58, pp. 633-640. (doi:10.1016/S0167-9317(01)00495-6)

2000

Chen, Y., Edgar, D., Li, X., Macintyre, D. and Thoms, S. (2000) Fabrication of 30 nm T gates using SiNx as a supporting and definition layer. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 18(6), p. 3521. (doi:10.1116/1.1321279)

Chen, Y., Edgar, D., Li, X., Macintyre, D. and Thoms, S. (2000) Fabrication of 30 nm T Gates Using SiNx as a Supporting and Definition Layer. In: 44th International Conference on Electron Ion and Photon Beam Technology and Nanofabrication (EIPBN), Rancho Mirage, CA, USA, 30 May - 2 Jun 2000,

Li, X., Elgaid, K., McLelland, H. and Thayne, I.G. (2000) Effects of Pressure and Capping Layer Thickness on Sub-Micron T-Gate Recess Etching of GaAs pHEMTs by SiCl4/SiF4/O2 Reactive Ion Etch. In: 26th International Conference on Micro- and Nano-Engineering, Jena, Germany, 18-21 Sept 2000,

1999

Elgaid, K., Li, X., Williamson, F., McLelland, H., Ferguson, S.M., Holland, M.C., Beaumont, S.P. and Thayne, I.G. (1999) Optimisation of DC and RF performance of GaAs HEMT-based Schottky diodes. Electronics Letters, 35(19), pp. 1678-1679. (doi:10.1049/el:19991104)

1998

Li, X., Gay, D.L., McNeill, D.W., Armstrong, B.M. and Gamble, H.S. (1998) BESOI Using a Silicon Germanium Etch Stop. In: Fourth International Symposium on Semiconductor Wafer Bonding : Science, Technology, and Applications, Paris, France, 1997, pp. 313-320. ISBN 9781566771894

McNeill, D.W., Gay, D.L., Li, X., Armstrong, B.M. and Gamble, H.S. (1998) Low temperature epitaxy of Si/Si1-xGex/Si multilayers by low pressure RTCVD for very thin SOI applications. MRS Proceedings, 533, (doi:10.1557/PROC-533-307)

1997

Li, X., Gay, D.L., McNeill, D.W. and Armstrong, B.M. (1997) Low Temperature CVD of Tantalum Oxide Films, International Symposium on Chemical Vapour Deposition. In: CVD-XIV and EUROCVD 11, Paris, France, Aug 1997,

1996

Zhao, Z., Lee, C.C., Monckton, D.G., Yazdani, A., Coolbaugh, M., Li, X., Bailey, J., Shen, Y. and Caskey, C.T. (1996) Characterization and genomic mapping of genes and pseudogenes of a new human protein tyrosine phosphatase. Genomics, 35(1), 172 -181. (doi:10.1006/geno.1996.0336)

1995

He, L., Li, X. and Tang, H. (1995) The manufacturing of non-borne starch adhensive. Zhu Zhou Gong Xue Yuan Xue Bao = Journal of Zhuzhou Institute of Technology, 9(3), pp. 15-19.

He, L., Li, X., Zhang, Q. and Tang, H. (1995) Development of CFP, a new-type packaging material. Zhu Zhou Gong Xue Yuan Xue Bao = Journal of Zhuzhou Institute of Technology, 9(2), pp. 1-7.

He, L., Li, X., Zhang, Q. and Tang, H. (1995) Development of a novel packaging material CFP. Packaging Engineering, 5, pp. 19-23.

Li, X. (1995) A Study of Low Temperature and Low Pressure CVD of Tantalum Oxide Thin Films. In: 10th European Conference on Chemical Vapour Deposition, Venice, Italy, 10-15 Sept 1995,

Zeng, R., He, L., Zhang, Q., Xiang, B. and Li, X. (1995) A study of the comprehensive utility of used paper-plastic packaging material. Zhu Zhou Gong Xue Yuan Xue Bao = Journal of Zhuzhou Institute of Technology, 9(1), pp. 1-7.

1994

Cao, S. and Li, X. (1994) A study of HAQPT synthesis and its application in the spectrophotometric determination of Vanadium (V). Hunan Yejin [Hunan Metallurgy], 3, pp. 55-65.

Cao, S. and Li, X. (1994) A study of HPyNJ synthesis and its reaction with Pd(II) in spectrophotometric application. Hunan Yejin [Hunan Metallurgy], 5, pp. 52-55.

1993

Cao, S. and Li, X. (1993) A spectrophotometric study of a new hydroxytriazene reagent HPyPT and its reaction with Pd(II). Hunan Yejin [Hunan Metallurgy], 3, pp. 51-54.

He, L. and Li, X. (1993) Starch-Based Adhesives and Corrugated Board Boxes. The Publisher of the National Defence University of Science and Technology: Changsha, China.

1992

Shiti, C. and Li, X. (1992) 1-(4-nitrophenyl)-3-(2-quinolyl) triazene as an extremely sensitive reagent for spectrophotometric determination of mercury. Talanta, 39(10), pp. 1395-1398. (doi:10.1016/0039-9140(92)80257-E)

He, L. and Li, X. (1992) Extraction of copper from the sludge drained by chemical fertiliser plants. Huan Jing Gong Cheng = Environmental Engineering, 10(1), pp. 54-57.

Li, X. and Cao, S. (1992) 1-(4-Nitrophenyl)-3-(2-quinolyl)triazene As An Extremely Sensitive Reagent for Spectrophotometric Determination of Cadmium(II). In: The Conference on Analytical Chemistry to Celebrate the Publication of Fenxi Shiyanshi (Analytical Laboratory) for 10 years, HuangShan, China, 1992,

Li, X. and He, L. (1992) Researches on the preparation and properties of a novel starch-based adhesive (wn-8) in corrugate board box industry. Zhu Zhou Gong Xue Yuan Xue Bao = Journal of Zhuzhou Institute of Technology, 6(3), pp. 16-23.

1991

He, J. and Li, X. (1991) An introduction to the American higher education on packaging-part I. Zhu Zhou Gong Xue Yuan Xue Bao = Journal of Zhuzhou Institute of Technology, 5(3), pp. 43-47.

He, J. and Li, X. (1991) An introduction to the American higher education on packaging-part II. Zhu Zhou Gong Xue Yuan Xue Bao = Journal of Zhuzhou Institute of Technology, 5(4), pp. 40-46.

Li, X. and He, L. (1991) An Overview on the Recovery of the Plastics in the Discarded Packaging. In: The National Conference on the Recovery of the Discarded Packaging and Environment Protection, Qingdao, China, Sept 1991,

1990

Li, X. and Cao, S. (1990) Super modified controlled weighted centroid simplex method and its application. Ye Jin Fen Xi = Metallurgical Analysis, 10(4), 42-46, 62.

1989

Cao, S. and Li, X. (1989) Hydroxytriazenes and their application in chemical analysis. Ye Jin Fen Xi = Metallurgical Analysis, 9(6), pp. 45-50.

1987

Cao, S. and Li, X. (1987) A review on triazenes in spectrophotometry. Fen Xi Shi Yan Shi = Analytical laboratory, 6(4), pp. 26-38.

Cao, S., Li, X. and Chen, J. (1987) Spectrophotometric determination of micro-amount of magnesium with 1-(2-chloro-4-nitrophenyl)-3-hydroxy-3-phenyltriazene. Fen Xi Shi Yan Shi = Analytical laboratory, 6(11), pp. 24-26.

Cao, S., Li, X. and Qu, L. (1987) Spectrophotometric study on 1-(4-nitrophenyl)-3-(2-pyridyl)-triazene and cadmium(ii) and its analytical application. Fen Xi Shi Yan Shi = Analytical laboratory, 6(9), pp. 1-6.

This list was generated on Mon Jun 26 17:39:06 2017 BST.
Number of items: 138.

Articles

Eblabla, A., Benakaprasad, B., Li, X., Wallis, D.J., Guiney, J. and Elgaid, K. (2017) Low-loss MMICs viable transmission media for GaN-on-low resistivity silicon technology. IEEE Microwave and Wireless Components Letters, 27(1), pp. 10-12. (doi:10.1109/LMWC.2016.2629964)

Eblabla, A. M., Li, X., Wallis, D. J., Guiney, I. and Elgaid, K. (2017) GaN on low resistivity silicon THz high -Q passive device technology. IEEE Transactions on Terahertz Science and Technology, 7(1), pp. 93-97. (doi:10.1109/TTHZ.2016.2618751)

Oxland, R. et al. (2016) InAs FinFETs with Hfin = 20 nm fabricated using a top-down etch process. IEEE Electron Device Letters, 37(3), pp. 261-264. (doi:10.1109/LED.2016.2521001)

Cho, S.J., Roberts, J., Guiney, I., Li, X., Ternent, G., Floros, K., Humphreys, C.J., Chalker, P. and Thayne, I.G. (2015) A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor. Microelectronic Engineering, 147, pp. 277-280. (doi:10.1016/j.mee.2015.04.067)

Peralagu, U. et al. (2015) (Invited) towards a vertical and damage free post-etch InGaAs fin profile: dry etch processing, sidewall damage assessment and mitigation options. ECS Transactions, 69(5), pp. 15-36. (doi:10.1149/06905.0015ecst)

Eblabla, A., Li, X., Thayne, I., Wallis, D. J., Guiney, I. and Elgaid, K. (2015) High performance GaN high electron mobility transistors on low resistivity silicon for X-Band applications. IEEE Electron Device Letters, 36(9), pp. 899-901. (doi:10.1109/LED.2015.2460120)

Wang, S.-W. et al. (2015) Field-effect mobility of InAs surface channel nMOSFET with low Dit scaled gate-stack. IEEE Transactions on Electron Devices, 62(8), pp. 2429-2436. (doi:10.1109/TED.2015.2445854)

Cao, M., Li, X., Missous, M. and Thayne, I. (2015) Nanoscale molybdenum gates fabricated by low damage inductively coupled plasma SF6/C4F8 etching suitable for high performance compound semiconductor transistors. Microelectronic Engineering, 140, pp. 56-59. (doi:10.1016/j.mee.2015.06.003)

Brown, R., Macfarlane, D., Al-Khalidi, A., Li, X., Ternent, G., Zhou, H., Thayne, I. and Wasige, E. (2014) A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT. IEEE Electron Device Letters, 35(9), pp. 906-908. (doi:10.1109/LED.2014.2334394)

Cao, M., Li, X., Ferguson, S., Thoms, S., Macintyre, D. and Thayne, I. (2014) A simple silicon compatible 40nm electroplated copper T-gate process. Microelectronic Engineering, 121, pp. 153-155. (doi:10.1016/j.mee.2014.05.007)

Mirza, M. M., Zhou, H., Velha, P., Li, X., Docherty, K. E., Samarelli, A., Ternent, G. and Paul, D. J. (2012) Nanofabrication of high aspect ratio (∼50:1) sub-10 nm silicon nanowires using inductively coupled plasma etching. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 30(6), 06FF02. (doi:10.1116/1.4755835)

Oxland, R. et al. (2012) An ultralow-resistance ultrashallow metallic source/drain contact scheme for III-V NMOS. IEEE Electron Device Letters, 33(4), pp. 501-503. (doi:10.1109/LED.2012.2185919)

Greer, A.I.M., Seunarine, K., Khokhar, A., Li, X., Moran, D. and Gadegaard, N. (2012) Direct nanopatterning of commercially pure titanium with ultra-nanocrystalline diamond stamps. Physica Status Solidi A: Applications and Materials Science, 209(9), pp. 1721-1725. (doi:10.1002/pssa.201200057)

Li, X., Zhou, H., Hill, R.J.W., Holland, M. and Thayne, I. (2012) A low damage etching process of sub-100 nm platinum gate line for III-V metal-oxide-semiconductor field-effect transistor fabrication and the optical emission spectrometry of the inductively coupled plasma of SF6/C4F8. Japanese Journal of Applied Physics, 51(1), (doi:10.1143/JJAP.51.01AB01)

Thayne, I., Bentley, S., Holland, M., Jansen, W., Li, X., Macintyre, D., Thoms, S., Shin, B., Ahn, J. and McIntyre, P. (2011) III–V nMOSFETs – some issues associated with roadmap worthiness (invited). Microelectronic Engineering, 88(7), pp. 1070-1075. (doi:10.1016/j.mee.2011.03.100)

Bentley, S. et al. (2011) Electron mobility in surface- and buried- channel flatband In0.53Ga0.47As MOSFETs with ALD Al2O3 gate dielectric. IEEE Electron Device Letters, 32(4), pp. 494-496. (doi:10.1109/LED.2011.2107876)

Oxland, R. K., Li, X., Ferguson, S., Bentley, S. and Thayne, I. G. (2010) Copper-plated 50 nm T-gate fabrication. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 28(6), C6P7. (doi:10.1116/1.3501346)

Taking, S. et al. (2010) Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium. Electronics Letters, 46(4), pp. 301-302. (doi:10.1049/el.2010.2781)

Li, X., Bentley, S., McLelland, H., Holland, M., Zhou, H., Thoms, S., Macintyre, D. and Thayne, I. (2010) Low damage fully self-aligned replacement gate process for fabricating deep sub-100 nm gate length GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 28(6), C6L1. (doi:10.1116/1.3501355)

Li, X., Zhou, H., Hill, R.J.W., Longo, P., Holland, M. and Thayne, I.G. (2010) Dry etching device quality high-kappa GaxGdyOz gate oxide in SiCl4 chemistry for low resistance ohmic contact realisation in fabricating III-V MOSFETs. Microelectronic Engineering, 87(5-8), pp. 1587-1589. (doi:10.1016/j.mee.2009.11.011)

Bentley, S., Li, X., Moran, D.A.J. and Thayne, I.G. (2009) Two methods of realising 10 nm T-gate lithography. Microelectronic Engineering, 86(4-6), pp. 1067-1070. (doi:10.1016/j.mee.2008.12.029)

Li, X., Hill, R.J.W., Longo, P., Holland, M.C., Zhou, H., Thoms, S., Macintyre, D.S. and Thayne, I.G. (2009) Fully self-aligned process for fabricating 100 nm gate length enhancement mode GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27(6), pp. 3153-3157. (doi:10.1116/1.3256624)

Thayne, I.G. et al. (2009) Review of current status of III-V MOSFETs. ECS Transactions, 19(5), pp. 275-286. (doi:10.1149/1.3119552)

Thayne, I., Li, X., Jansen, W., Ignatova, O., Bentley, S., Zhou, H., Macintyre, D., Thoms, S. and Hill, R. (2009) Development of III-V MOSFET process modules compatible with silicon ULSI manufacture. ECS Transactions, 25(7), pp. 385-395. (doi:10.1149/1.3203975)

Hill, R.J.W. et al. (2008) 1 μm gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737μS/μm. Electronics Letters, 44, pp. 498-500. (doi:10.1049/el:20080470)

Bentley, S., Li, X., Moran, D. A. J. and Thayne, I. G. (2008) Fabrication of 22 nm T-gates for HEMT applications. Microelectronic Engineering, 85(5-6), pp. 1375-1378. (doi:10.1016/j.mee.2008.01.058)

Li, X., Hill, R.J.W., Zhou, H. P., Wilkinson, C.D.W. and Thayne, I.G. (2008) A low damage Si3N4 sidewall spacer process for self-aligned sub-100 nm III-V MOSFETs. Microelectronic Engineering, 85(5-6), pp. 996-999. (doi:10.1016/j.mee.2007.12.064)

Li, X., Zhou, H.P., Abrokwah, J., Zurcher, P., Rajagopalan, K., Liu, W., Gregory, R., Passlack, M. and Thayne, I.G. (2008) Low damage ashing and etching processes for ion implanted resist and Si3N4 removal by ICP and RIE methods. Microelectronic Engineering, 85(5-6), pp. 966-968. (doi:10.1016/j.mee.2007.12.056)

Hill, R.J.W. et al. (2007) Enhancement-mode GaAs MOSFETs with an In0.3 Ga0.7As channel, a mobility of over 5000 cm2/V ·s, and transconductance of over 475 μS/μm. IEEE Electron Device Letters, 28(12), pp. 1080-1082. (doi:10.1109/LED.2007.910009)

Li, X., Zhou, H., Hill, R.J.W., Wilkinson, C.D.W. and Thayne, I.G. (2007) Dry etching of a device quality high-k GaxGdyOz gate oxide in CH4/H2–O2 chemistry for the fabrication of III–V MOSFETs. Microelectronic Engineering, 84(5-8), pp. 1124-1127. (doi:10.1016/j.mee.2007.01.045)

Hill, R.J.W., Moran, D.A.J., Li, X., Zhou, H., Macintyre, D., Thoms, S., Droopad, R., Passlack, M. and Thayne, I.G. (2007) 180nm metal gate, high-k dielectric, implant-free III--V MOSFETs with transconductance of over 425 μS/μm. Electronics Letters, 43, pp. 543-545. (doi:10.1049/el:20070427)

Li, X., Zhou, H., Wilkinson, C. D.W. and Thayne, I. G. (2006) Optical emission spectrometry of plasma in low-damage sub-100 nm tungsten gate reactive ion etching process for compound semiconductor transistors. Japanese Journal of Applied Physics, 45(Pt.1), pp. 8364-8369. (doi:10.1143/JJAP.45.8364)

Li, X., Cao, X., Zhou, H., Wilkinson, C.D.W., Thoms, S., Macintyre, D., Holland, M. and Thayne, I. (2006) 30 nm Tungsten gates etched by a low damage ICP etching for the fabrication of compound semiconductor transistors. Microelectronic Engineering, 83, pp. 1152-1154. (doi:10.1016/j.mee.2006.01.073)

Li, X., Cao, X., Zhou, H., Wilkinson, C.D.W., Thoms, S., Macintyre, D.S., Holland, M.C. and Thayne, I.G. (2006) 30 nm tungsten gates etched by a low damage ICP etching for the fabrication of compound semiconductor transistors. Microelectronic Engineering, 83(4-9), pp. 1152-1154. (doi:10.1016/j.mee.2006.01.073)

Li, X., Cao, X., Zhou, H., Wilkinson, C.D.W., Thoms, S., Macintyre, D., Holland, M. and Thayne, I.G. (2006) A low damage RIE process for the fabrication of compound semiconductor based transistors with sub-100 nm tungsten gates. Microelectronic Engineering, 83(4-9), pp. 1159-1162. (doi:10.1016/j.mee.2006.01.074)

Cao, X. et al. (2005) Low damage sputter deposition of tungsten for decanano compound semiconductor transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 23(6), pp. 3138-3142. (doi:10.1116/1.2127937)

Li, X., Elgaid, K., McLelland, H. and Thayne, I.G. (2005) Surface mass spctrometric analysis of SiCl4/SiF4/O-2 dry etch gate recessed 120 nm T-gate GaAs pHEMTs. Microelectronic Engineering, 78-79, pp. 233-238. (doi:10.1016/j.mee.2004.12.032)

Li, X., Elgaid, K., McLelland, H. and Thayne, I.G. (2001) Effects of pressure and capping layer thickness on sub-micron T-gate recess etching of GaAs p-HEMTs by SiCl4/SiF4/O2 reactive ion etch. Microelectronic Engineering, 57-58, pp. 633-640. (doi:10.1016/S0167-9317(01)00495-6)

Chen, Y., Edgar, D., Li, X., Macintyre, D. and Thoms, S. (2000) Fabrication of 30 nm T gates using SiNx as a supporting and definition layer. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 18(6), p. 3521. (doi:10.1116/1.1321279)

Elgaid, K., Li, X., Williamson, F., McLelland, H., Ferguson, S.M., Holland, M.C., Beaumont, S.P. and Thayne, I.G. (1999) Optimisation of DC and RF performance of GaAs HEMT-based Schottky diodes. Electronics Letters, 35(19), pp. 1678-1679. (doi:10.1049/el:19991104)

McNeill, D.W., Gay, D.L., Li, X., Armstrong, B.M. and Gamble, H.S. (1998) Low temperature epitaxy of Si/Si1-xGex/Si multilayers by low pressure RTCVD for very thin SOI applications. MRS Proceedings, 533, (doi:10.1557/PROC-533-307)

Zhao, Z., Lee, C.C., Monckton, D.G., Yazdani, A., Coolbaugh, M., Li, X., Bailey, J., Shen, Y. and Caskey, C.T. (1996) Characterization and genomic mapping of genes and pseudogenes of a new human protein tyrosine phosphatase. Genomics, 35(1), 172 -181. (doi:10.1006/geno.1996.0336)

He, L., Li, X. and Tang, H. (1995) The manufacturing of non-borne starch adhensive. Zhu Zhou Gong Xue Yuan Xue Bao = Journal of Zhuzhou Institute of Technology, 9(3), pp. 15-19.

He, L., Li, X., Zhang, Q. and Tang, H. (1995) Development of CFP, a new-type packaging material. Zhu Zhou Gong Xue Yuan Xue Bao = Journal of Zhuzhou Institute of Technology, 9(2), pp. 1-7.

He, L., Li, X., Zhang, Q. and Tang, H. (1995) Development of a novel packaging material CFP. Packaging Engineering, 5, pp. 19-23.

Zeng, R., He, L., Zhang, Q., Xiang, B. and Li, X. (1995) A study of the comprehensive utility of used paper-plastic packaging material. Zhu Zhou Gong Xue Yuan Xue Bao = Journal of Zhuzhou Institute of Technology, 9(1), pp. 1-7.

Cao, S. and Li, X. (1994) A study of HAQPT synthesis and its application in the spectrophotometric determination of Vanadium (V). Hunan Yejin [Hunan Metallurgy], 3, pp. 55-65.

Cao, S. and Li, X. (1994) A study of HPyNJ synthesis and its reaction with Pd(II) in spectrophotometric application. Hunan Yejin [Hunan Metallurgy], 5, pp. 52-55.

Cao, S. and Li, X. (1993) A spectrophotometric study of a new hydroxytriazene reagent HPyPT and its reaction with Pd(II). Hunan Yejin [Hunan Metallurgy], 3, pp. 51-54.

Shiti, C. and Li, X. (1992) 1-(4-nitrophenyl)-3-(2-quinolyl) triazene as an extremely sensitive reagent for spectrophotometric determination of mercury. Talanta, 39(10), pp. 1395-1398. (doi:10.1016/0039-9140(92)80257-E)

He, L. and Li, X. (1992) Extraction of copper from the sludge drained by chemical fertiliser plants. Huan Jing Gong Cheng = Environmental Engineering, 10(1), pp. 54-57.

Li, X. and He, L. (1992) Researches on the preparation and properties of a novel starch-based adhesive (wn-8) in corrugate board box industry. Zhu Zhou Gong Xue Yuan Xue Bao = Journal of Zhuzhou Institute of Technology, 6(3), pp. 16-23.

He, J. and Li, X. (1991) An introduction to the American higher education on packaging-part I. Zhu Zhou Gong Xue Yuan Xue Bao = Journal of Zhuzhou Institute of Technology, 5(3), pp. 43-47.

He, J. and Li, X. (1991) An introduction to the American higher education on packaging-part II. Zhu Zhou Gong Xue Yuan Xue Bao = Journal of Zhuzhou Institute of Technology, 5(4), pp. 40-46.

Li, X. and Cao, S. (1990) Super modified controlled weighted centroid simplex method and its application. Ye Jin Fen Xi = Metallurgical Analysis, 10(4), 42-46, 62.

Cao, S. and Li, X. (1989) Hydroxytriazenes and their application in chemical analysis. Ye Jin Fen Xi = Metallurgical Analysis, 9(6), pp. 45-50.

Cao, S. and Li, X. (1987) A review on triazenes in spectrophotometry. Fen Xi Shi Yan Shi = Analytical laboratory, 6(4), pp. 26-38.

Cao, S., Li, X. and Chen, J. (1987) Spectrophotometric determination of micro-amount of magnesium with 1-(2-chloro-4-nitrophenyl)-3-hydroxy-3-phenyltriazene. Fen Xi Shi Yan Shi = Analytical laboratory, 6(11), pp. 24-26.

Cao, S., Li, X. and Qu, L. (1987) Spectrophotometric study on 1-(4-nitrophenyl)-3-(2-pyridyl)-triazene and cadmium(ii) and its analytical application. Fen Xi Shi Yan Shi = Analytical laboratory, 6(9), pp. 1-6.

Books

He, L. and Li, X. (1993) Starch-Based Adhesives and Corrugated Board Boxes. The Publisher of the National Defence University of Science and Technology: Changsha, China.

Book Sections

Hill, R.J.W., Moran, D.A.J., Li, X., Zhou, H., Macintyre, D.S., Thoms, S., Asenov, A. and Thayne, I.G. (2008) Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics. In: Proceedings of the IEEE Silicon Nanoelectronics Workshop, 15-16 June 2008, Honolulu, Hawaii. IEEE Computer Society: Piscataway, N.J., USA. ISBN 9781424420711 (doi:10.1109/SNW.2008.5418447)

Conference or Workshop Item

Cho, S.-J., Li, X., Floros, K., Hamakumara, D., Ignatova, O., Moran, D., Humphreys, C.J. and Thayne, I. (2016) Low off-state Leakage Currents in AlGaN/GaN High Electron Mobility Transistors By Employing A Highly Stressed SiNx Surface Passivation Layer. 19th Workshop on Dielectrics in Microelectronics (WoDIM), Aci Castello, Catania, Italy, 27-30 Jun 2016.

Li, X., Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. 42nd International Conference on Micro and Nano Engineering (MNE 2016), Vienna, Austria, 19-23 Sept 2016. (Unpublished)

Moran, D.A.J. et al. (2007) High Performance Enhancement Mode III-V MOSFETs. IBM Workshop on Advanced Oxides, Zurich, Switzerland, June 2007.

Li, X., Zhou, H., Wilkinson, C. D.W. and Thayne, I. G. (2006) Optical Emission Spectrometry of Plasma in Low-Damage Sub-100 Nm Tungsten Gate Reactive Ion Etching Process for Compound Semiconductor Transistors. 6th International Conference on Reactive Plasmas and 23rd Symposium on Plasma Processing (ICRP-6/SPP-23), 24-27 Jan 2006. pp. 8364-8369.

Conference Proceedings

Thayne, I., Li, X., Millar, D., Fu, Y.-C. and Peralagu, U. (2017) Plasma Processing of III-V Materials for Energy Efficient Electronics Applications. In: Advanced Etch Technology for Nanopatterning VI, San Jose, CA, USA, 27 Feb - 01 Mar 2017, 101490R. (doi:10.1117/12.2257863)

Millar, D., Peralagu, U. , Li, X., Fu, Y.-C., Gaspar, G., Hurley, P. and Thayne, I. (2017) Improving the electrical properties of the In0.3Ga0.7Sb-Al2O3 interface via in-situ H2 plasma and TMA exposure. In: 20th Conference on Insulating Films on Semiconductors (INFOS 2017), Potsdam, Germany, 27-30 Jun 2017, (Accepted for Publication)

Benakaprasad, B., Eblabla, A., Li, X., Thayne, I., Wallis, D.J., Guiney, I., Humphreys, C. and Elgaid, K. (2017) Terahertz Microstrip Elevated Stack Antenna Technology on GaN-on-Low Resistivity Silicon Substrates for TMIC. In: 46th European Microwave Conference, London, 3-7 Oct 2016, (doi:10.1109/EuMC.2016.7824367)

Millar, D., Peralagu, U. , Fu, Y.-C., Li, X., Steer, M. and Thayne, I. (2016) Initial Investigation on the Impact of In Situ Hydrogen Plasma Exposure to the Interface Between Molecular Beam Epitaxially Grown P-Ga0.7In0.3Sb (100) and Thermal Atomic Layer Deposited (ALD) Al2O3. In: 19th Workshop on Dielectrics in Microelectronics (WoDIM), Aci Castello, Catania, Italy, 27-30 Jun 2016,

Benakaprasad, B., Eblabla, A., Li, X., Thayne, I., Wallis, D.J., Guiney, I., Humphreys, C. and Elgaid, K. (2016) Terahertz Microstrip Single Patch Antenna Technology on GaN-on-Low Resistivity Silicon Substrates for TMIC. In: IET Colloquium on Antennas, Wireless and Electromagnetics, Glasgow, UK, 26 May 2016, (Unpublished)

Benakaprasad, B., Eblabla, A., Li, X., Thayne, I., Wallis, D., Guiney, I., Humphreys, C. and Elgaid, K. (2016) Terahertz Monolithic Integrated Circuits (TMICs) Array Antenna Technology On GaN-on-Low Resistivity Silicon Substrates. In: 41st International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2016), Copenhagen, Denmark, 25-30 Sept 2016, (doi:10.1109/IRMMW-THz.2016.7758488)

Eblabla, A., Benakaprasad, B., Li, X., Wallis, D.J., Guiney, I. and Elgaid, K. (2016) High Frequency Active and Passives Devices using GaN on Low Resistivity Silicon. In: ARMMS RF & Microwave Society Conference, Milton Common Nr Thame, UK, 18-19 Apr 2016, (Unpublished)

Eblabla, A., Li, X., Thayne, I., Wallis, D.J., Guiney, I. and Elgaid, K. (2016) MMIC-Compatible Microstrip Technology for GaN-HEMTs on Low Resistivity Silicon Substrate. In: International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016, (Unpublished)

Eblabla, A., Li, X., Wallis, D. J., Guiney, I. and Elgaid, K. (2016) GaN-based HEMTs on Low Resistivity Silicon Technology for Microwave Applications. In: 8th Wide Bandgap Semiconductor and Components Workshop, Harwell. UK, 12-13 Sept 2016,

Floros, K., Li, X., Guiney, I., Cho, S.-J., Ternent, G., Hemakumara, D., Wasige, E., Moran, D.A.J., Humphries, C.J. and Thayne, I.G. (2016) A Dual Barrier InAlN/AlGaN/GaN HEMT on Si Substrate with Pt Based Gates. In: 9th International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016, (Unpublished)

Floros, K. et al. (2016) Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

Li, X., Fu, Y.-C., Millar, D.A.J., Peralagu, U. , Steer, M. and Thayne, I.G. (2016) The Impact of an HBr/Ar Atomic Layer Etch (ALE) Process for InGaAs Vertical Nanowire Diameter Reduction on the Interface Between InGaAs and In-situ ALD Deposited HfO2. In: 47th IEEE Semiconductor Interface Specialists Conference (SISC 2016), San Diego, CA, USA, 8-10 Dec 2016, (Accepted for Publication)

Li, X., Floros, K., Cho, S.-J., Guiney, I., Moran, D. and Thayne, I. G. (2016) Development of an Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation in Chlorine Gas and its Argon Plasma Removal for Precision Nanometer Scale Thin Layer Etch in GaN-Based Power Device Fabrications. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

Li, X., Floros, K., Cho, S.-J., Guiney, I., Moran, D. and Thayne, I. G. (2016) An Atomic Layer Etch Process Based on a Cycled Procedure of Chlorination in Cl2 and Argon Plasma Removal of Chlorides for GaN Based Device Fabrication. In: 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 9th International Conference on Plasma-Nano Technology & Science (ISPlasma2016 / IC-PLANTS2016), Nagoya, Japan, 6-10 March 2016,

Li, X., Fu, Y.-C., Floros, K., Cho, S.-J., Hemakumara, D., Guiney, I., Moran, D. and Thayne, I. G. (2016) Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications. In: UK Semiconductor Conference, Sheffield, UK, 6-7 July 2016, (Accepted for Publication)

Fu, Y.-C., Peralagu, U. , Li, X., Ignatova, O., Millar, D. A. J., Steer, M., Droopad, R. and Thayne, I. (2015) First Demonstration of Cluster Tool Based ICP Etching of (100) and (110) InGaAs MOSCAPs Followed by In-Situ ALD Deposition of HfO2 Including Nitrogen and Hydrogen Plasma Passivation for Non-Planar III-V MOSFETs. In: 46th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 02-05 Dec 2015,

Eblabla, A., Li, X., Thayne, I., Wallis, D. J., Guiney, I. and Elgaid, K. (2015) Effect Of AlN Spacer In The Layer Structure On High Rf Performance GaN-Based HEMTs On Low Resistivity Silicon At K-Band Application. In: 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 Aug - 4 Sept 2015, (Unpublished)

Fu, Y.-C., Peralagu, U. , Ignatova, O., Li, X., Droopad, R., Thayne, I., Lin, J., Povey, I., Monaghan, S. and Hurley, P. (2015) Energy-Band Structure of Atomic Layer Deposited Al2O3 & Sulphur Passivated Molecular Beam Epitaxially Grown (110) In0.53Ga0.47As Surfaces. In: 11th Conference on PhD Research in Microelectronics and Electronics (IEEE PRIME 2015), Glasgow, UK, 29 June - 2 July 2015,

Fu, Y.-C., Peralagu, U. , Ignatova, O., Li, X., Lin, J., Povey, I., Monaghan, S., Droopad, R., Hurley, P. and Thayne, I. (2015) Energy-band parameter of atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces. In: 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Glasgow, UK, 29 Jun - 02 Jul 2015, pp. 346-348. (doi:10.1109/PRIME.2015.7251406)

Li, X., Floros, K., Hemakumara, D., Moran, D. and Thayne, I. G. (2015) Realisation of Low Annealing Temperature and Low Resistance Ohmic Contacts forAlGaN/GaN-Based Power Devices Via SiH4 Inductively Coupled Plasma Treatment. In: UK Semiconductor Conference, Sheffield, UK, 1-2 July 2015,

Li, X., Floros, K., Ternent, G., Al-Khalidi, A., Wasige, E. and Thayne, I. G. (2015) Effect of SiH4 Inductively Coupled Plasma Surface Treatment On Low Temperature and Low Resistance Ohmic Contact for AlGaN/GaN-Based Power Device. In: 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 8th International Conference on Plasma-Nano Technology & Science (ISPlasma2015 / IC-PLANTS2015), Nagoya, Japan, 26-31 March 2015,

Zhou, H., Li, X. and Fu, Y. (2015) Low-Leakage Current and Damage-Free SiNx Deposition at 30oC By Inductively Coupled Plasma with Neutral Beams by Neutralization Grid Plate. In: 59th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN 2015), San Diego, CA, USA, 26-29 May 2015,

Peralagu, U. , Li, X., Ignatova, O., Steer, M., Povey, I., Hurley, P. and Thayne, I. (2014) Demonstration of III-V fins with vertical sidewalls using Cl2/CH4/H2/O2 dry etch chemistry in conjunction with digital etching for recovery of etch damage. In: 45th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, 10 - 13 Dec 2014,

Fu, Y.-C., Peralagu, U. , Lin, J., Povey, I., Li, X., Ignatova, O., Monaghan, S., Droopad, R., Hurley, P. and Thayne, I. (2014) The impact of forming gas annealing on the properties of interfaces between atomic layer deposited Al2O3 and sulphur passivated molecular beam epitaxially grown (110) p- and n-type In0.53Ga0.47As surfaces. In: 18th Workshop on Dielectrics in Microelectronics (WoDIM), Kinsale, Co Cork, Ireland, 9-11 Jun 2014,

Cao, M., Li, X. and Thayne, I. (2014) An Anisotropic Low Power, Low DC Bias, SF6/C4F8 Inductively Coupled Plasma Etch Process of Molybdenum with Critical Dimension of 30 nm Suitable for Compound Semiconductor Devices. In: 58th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN 2014), Washington, DC, USA, 27-30 May 2014,

Cao, M., Li, X. and Thayne, I. (2014) A low damage inductively coupled plasma etch process of molybdenum with critical dimension of 30 nm suitable for compound semiconductor devices. In: UK Semiconductors 2014, Sheffield, UK, 9-10 July 2014,

Cho, S.-J., Roberts, J.W., Li, X., Ternent, G., Floros, K., Thayne, I., Chalker, P. and Wasige, E. (2014) Effect of O2 plasma pre-treatment in Al2O3 passivation using atomic-layer-deposited on GaN based metal-oxide-semiconductor capacitor. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014, p. 184.

Li, X., Ternent, G., Al-Khalidi, A., Floros, K., Wasige, E. and Thayne, I. G. (2014) Low Temperature Ohmic Contacts to AlGaN/GaN HFETs on Si Substrates Using SiCl4 Based RIE Recess Etching. In: UK Semiconductors 2014, Sheffield, UK, 9-10 Jul 2014, p. 176.

Li, X., Ternent, G., Al-Khalidi, A., Floros, K., Wasige, E. and Thayne, I. (2014) Low temperature Ohmic contacts to AlGaN/GaN HFETs on Si substrates using SiCl4based RIE recess etching. In: UK Semiconductors 2014, Sheffield, UK, 9-10 July 2014,

Li, X., Ignatova, O., Cao, M., Peralagu, U. , Steer, M., Mirza, M., Zhou, H. and Thayne, I. (2013) 10 nm vertical In0.53Ga0.47As line etching process for III-V MOSFET fabrication by using inductively coupled plasma (ICP) etcher in Cl2/CH4/H2 chemistry. In: 26th International Microprocesses and Nanotechnology Conference (MNC), Royton Sapporo, Hokkaido, Japan, 5-8 Nov 2013,

Cao, M., Li, X., Ferguson, S., Thoms, S., Macintyre, D. and Thayne, I. (2013) A simple silicon compatible 40 nm electroplated Copper T‐gate process. In: MNE2013: 39th International Conference on Micro and Nano Engineering, London, UK, 16-19 Sept. 2013,

Chang, S.W. et al. (2013) InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V). In: IEEE International Electronic Devices Meeting (IEDM2013), Washington, D.C., 9-11 Dec 2013, 16.1.1-16.1.4. (doi:10.1109/IEDM.2013.6724639)

Ignatova, O. et al. (2013) Towards vertical sidewalls in III-V FinFETs: dry etch processing and its associated damage on the electrical and physical properties of (100)-oriented InGaAs. In: 44th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 5-7 Dec 2013, pp. 167-168.

Peralagu, U. , Ignatova, O., Li, X., Steer, M., Povey, I.M., Hurley, P.K. and Thayne, I.G. (2013) Optimisation of sidewalls in III-V FinFETs. In: UK Semiconductors 2013, Sheffield, UK, 3 - 4 Jul 2013,

Greer, A. I. M., Seunarine, K., Khokhar, A. Z., Li, X., Moran, D. A. J. and Gadegaard, N. (2012) Direct Nano-Patterning of Commercially Pure Titanium with Ultra-Nanocrystalline Diamond Stamps. In: SBDD XVII Diamond Workshop, Hasselt, Belgium, March 2012,

Mirza, M. M., Zhou, H., Velha, P., Li, X., Docherty, K. E., Samarelli, A., Ternent, G. and Paul, D. J. (2012) Nanofabrication of high aspect ratio (˜50:1) sub-10 nm silicon nanowires using inductively coupled plasma etching. In: EIPBN 2012: The 56th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication, Waikoloa,HI USA, 29 May - 01 June 2012,

Li, X., Zhou, H., Hill, R. J.W., Holland, M. and Thayne, I. G. (2011) A low damage etching process of sub-100 nm platinum gate line for III-V MOSFET fabrication and the optical emission spectrometry of the inductively coupled plasma of SF6/C4F8. In: ISPlasma 2011: 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, Nagoya, Japan, 6-9 March 2011,

Oxland, R.K., Li, X., Ferguson, S., Bentley, S. and Thayne, I. (2010) Copper–plated 50 nm T–gate fabrication. In: 54th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN 2010), Anchorage, AK, USA, 1-4 Jun 2010, pp. 15-24.

Li, X., Bentley, S., Holland, M.C., Zhou, H., Thoms, S., Macintyre, D.S. and Thayne, I.G. (2010) A low damage fully self-aligned gate-last process for fabricating sub-100 nm gate length enhancement mode GaAs MOSFETs. In: 54th International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication, Anchorage, USA, June 2010,

Taking, S., Banerjee, A., Zhou, H., Li, X., MacFarlane, D., Dabiran, A. and Wasige, E. (2010) Thin Al2O3 formed by thermal oxidation of evaporated aluminium for AlN/GaN MOS-HEMT technology. In: UKNC Conference, Cork, Ireland, 12-13 Jan 2010,

Hill, R.J.W. et al. (2009) Deep sub-micron and self-aligned flatband III–V MOSFETs. In: Device Research Conference, 2009 (DRC 2009), University Park, PA, USA, 22-24 Jun 2009, pp. 251-252. (doi:10.1109/DRC.2009.5354900)

Li, X., Hill, R.J.W., Longo, P., Holland, M.C., Zhou, H., Thoms, S., Macintyre, D.S. and Thayne, I.G. (2009) 100 nm gate length enhancement mode GaAs MOSFETs fabricated by a fully self-aligned process. In: UK Compound Semiconductor Conference 2009, Sheffield, UK, 1-2 July 2009,

Li, X., Hill, R.J.W., Longo, P., Holland, M.C., Zhou, H., Thoms, S., Macintyre, D.S. and Thayne, I.G. (2009) Fully self-aligned process for fabricating 100 nm gate length enhancement mode GaAs MOSFETs. In: EIPBN 2009: The 53rd International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication, Marco Island, Florida, USA, 24-29 May 2009,

Hill, R., Moran, D., Li, X., Macintyre, D.S., Thoms, S., Asenov, A., Droopad, R., Passlack, M. and Thayne, I. (2008) III-V MOSFETs: a possible solution for sub-22 nm CMOS nFETs. In: 17th European Heterostructure Technology Workshop, Venice, Italy, Nov 2008,

Li, X., Zhou, H., Hill, R., Holland, M. and Thayne, I.G. (2008) Low damage inductively coupled plasma etching of sub-100 nm platinum gate line in SF6/C4F8 for III-V MOSFET fabrication process. In: 34th International Conference on Micro- and Nano-Engineering (MNE 2008), Athens, Greece, 15-18 September 2008,

Kalna, K. et al. (2008) III-V MOSFETs for digital applications with silicon co-integration. In: 7th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice, Slovakia, 12-16 October 2008, pp. 39-46. ISBN 9781424423255 (doi:10.1109/ASDAM.2008.4743354)

Passlack, M. et al. (2007) High mobility III-V MOSFETs for RF and digital applications. In: IEEE International Electron Devices Meeting (IEDM 2007), Washington DC, USA, 10-12 December 2007, pp. 621-624. ISBN 9781424415083 (doi:10.1109/IEDM.2007.4419016)

Hill, R. J. W., Holland, M., Li, X., Macintyre, D., Moran, D., Stanley, C. R., Thoms, S., Zhou, H. and Thayne, I. G. (2007) Recent Developments in III-V MOSFETs Technology. In: 15th International Symposium Nanostructures: Physics and Technology, Novosibirsk, Russia, 25-29 June 2007, pp. 134-136. ISBN 9785936340222

Hill, R.J.W., Holland, M.C., Li, X., Macintyre, D.S., Moran, D.A.J., Stanley, C.R., Thoms, S. and Thayne, I.G. (2007) Enhancement Mode, Implant Free, Metal Gate, High-K Dielectric, III-V MOSFETs. In: 2007 8th European Workshop on Ultimate Integration of Silicon (ULIS), Leuven, Belgium, 15-16 Mar 2007, pp. 129-132.

Moran, D. A. J. et al. (2007) III-V Enhancement Mode MOSFETs for Digital Applications. In: IBM MRC Oxide Workshop, Zurich, Switzerland, 25-27 June 2007,

Moran, D. A. J. et al. (2007) High Performance Enhancement-Mode III-V MOSFETs. In: UK Compound Semiconductor Conference 2007, Sheffield, UK, 2007,

Moran, D.A.J. et al. (2007) Sub-micron, Metal Gate, High-к Dielectric, Implant-free, Enhancement-mode III-V MOSFETs. In: 37th European Solid State Device Research Conference (ESSDERC 2007), Munich, Germany, 11-13 September 2007, pp. 466-469. ISBN 9781424411245 (doi:10.1109/ESSDERC.2007.4430979)

Passlack, M. et al. (2007) High Mobility III-V MOSFET Technology. In: 7th Topical Workshop on Heterostructure Microelectronics (TWHM 2007), Chiba, Japan, 21-24 Aug 2007,

Passlack, M. et al. (2007) High mobility III-V MOSFET Technology. In: CS MANTECH Conference, Austin, TX, USA, 14-17 May 2007,

Rajagopalan, K. et al. (2007) Enhancement Mode n-MOSFET with High-κ Dielectric on GaAs Substrate. In: IEEE 65th Annual Device Research Conference, South Bend, Indiana, USA, 18-20 June 2007, pp. 205-206. ISBN 9781424411023 (doi:10.1109/DRC.2007.4373719)

Thayne, I. G. et al. (2007) High Performance Enhancement Mode III-V MOSFETs for Silicon Co-Integration. In: Silicon Nanoelectronics Workshop, Kyoto, Japan, 10-11 June 2007,

Thayne, I.G. et al. (2007) Recent Progress in III-V MOSFETs. In: UK Condensed Matter and Material Physics Conference, Leicester, UK, April 2007,

Hill, R.J.W., Li, X., Moran, D.A.J., Zhou, H. and Thayne, I.G. (2006) A Low Damage Subtractive Ohmic Contact Process for III-V Mosfets. In: UK III-V Compound Semiconductors 2006, Sheffield, UK,

Li, X., Hill, R., Zhou, H., Wilkinson, C.D.W., Holland, M. and Thayne, I.G. (2006) GaxGdyOz Dry Etching Processes for the Fabrication of III-V MOSFET. In: UK III-V Compound Semiconductors 2006, Sheffield, UK,

Li, X., Hill, R., Zhou, H., Wilkinson, C.D.W. and Thayne, I.G. (2006) A low damage RIE SiN sidewall spacer process for self-aligned sub-100nm III-V MOSFETs. In: UK III-V Compound Semiconductors 2006, Sheffield, UK,

Li, X., Zhou, H., Cao, X., Wilkinson, C.D.W. and Thayne, I.G. (2006) Low damage dry etching processes for the fabrication of compound semiconductor based transistors with sub-100nm tungsten gates. In: UK III-V Compound Semiconductors 2006, Sheffield, UK,

Thayne, I.G. et al. (2006) III-V MOSFETs for Digital Applications: An Overview. In: UK III-V Compound Semiconductors 2006, Sheffield, UK,

Li, X., Elgaid, K., McLelland, H. and Thayne, I. G. (2003) A Novel Single Step Sol-Gel Process for Silica on Silicon PLC's. In: 14th International Conference on Integrated Optics and Optical Fibre Communication, Rimini, Italy, 22-24 Sept 2003,

Rehman, H.-u., Capecchi, S., Li, X., Ou, D. and Suyal, N. (2003) A Novel Single Step Sol Gel Process for Silica on Silicon Planar Lightwave Circuits. In: European Congress on Advanced Materials and Processes (EUROMAT 2003), Lausanne, Switzerland, 1-5 Sept 2003,

McEwan, I., Suyal, N., Li, X., Grant, A., Layet, B., Rodden, G. and Tooley, F. (2002) Photopolymer Tunable AWG Filter. In: 28th European Conference on Optical Communication, Copenhagen, Denmark, 8-12 Sept 2002,

Chen, Y., Edgar, D., Li, X., Macintyre, D. and Thoms, S. (2000) Fabrication of 30 nm T Gates Using SiNx as a Supporting and Definition Layer. In: 44th International Conference on Electron Ion and Photon Beam Technology and Nanofabrication (EIPBN), Rancho Mirage, CA, USA, 30 May - 2 Jun 2000,

Li, X., Elgaid, K., McLelland, H. and Thayne, I.G. (2000) Effects of Pressure and Capping Layer Thickness on Sub-Micron T-Gate Recess Etching of GaAs pHEMTs by SiCl4/SiF4/O2 Reactive Ion Etch. In: 26th International Conference on Micro- and Nano-Engineering, Jena, Germany, 18-21 Sept 2000,

Li, X., Gay, D.L., McNeill, D.W., Armstrong, B.M. and Gamble, H.S. (1998) BESOI Using a Silicon Germanium Etch Stop. In: Fourth International Symposium on Semiconductor Wafer Bonding : Science, Technology, and Applications, Paris, France, 1997, pp. 313-320. ISBN 9781566771894

Li, X., Gay, D.L., McNeill, D.W. and Armstrong, B.M. (1997) Low Temperature CVD of Tantalum Oxide Films, International Symposium on Chemical Vapour Deposition. In: CVD-XIV and EUROCVD 11, Paris, France, Aug 1997,

Li, X. (1995) A Study of Low Temperature and Low Pressure CVD of Tantalum Oxide Thin Films. In: 10th European Conference on Chemical Vapour Deposition, Venice, Italy, 10-15 Sept 1995,

Li, X. and Cao, S. (1992) 1-(4-Nitrophenyl)-3-(2-quinolyl)triazene As An Extremely Sensitive Reagent for Spectrophotometric Determination of Cadmium(II). In: The Conference on Analytical Chemistry to Celebrate the Publication of Fenxi Shiyanshi (Analytical Laboratory) for 10 years, HuangShan, China, 1992,

Li, X. and He, L. (1991) An Overview on the Recovery of the Plastics in the Discarded Packaging. In: The National Conference on the Recovery of the Discarded Packaging and Environment Protection, Qingdao, China, Sept 1991,

Patents

Freescale Semiconductor, Inc. (2009) III-V MOSFET Fabrication and Device (Fabrication process of e.g. group III-V MOSFET for nano complementary metal oxide semiconductor application, involves heat treating metal contact structure to produce alloy region within semiconductor substrate). .

This list was generated on Mon Jun 26 17:39:06 2017 BST.