2012

Oxland, R. et al. (2012) An ultralow-resistance ultrashallow metallic source/drain contact scheme for III-V NMOS. IEEE Electron Device Letters, 33 (4). pp. 501-503. ISSN 0741-3106 (doi:10.1109/LED.2012.2185919)

2011

Bentley, S. et al. (2011) Electron mobility in surface- and buried- channel flatband In_0.53Ga_0.47As MOSFETs with ALD Al₂O₃ gate dielectric. IEEE Electron Device Letters, 32 (4). pp. 494-496. ISSN 0741-3106 (doi:10.1109/LED.2011.2107876)

2010

Taking, S. et al. (2010) Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium. Electronics Letters, 46 (4). pp. 301-302. ISSN 0013-5194 (doi:10.1049/el.2010.2781)

Li, X., Bentley, S. , Holland, M.C. , Zhou, H. , Thoms, S. , Macintyre, D.S. , and Thayne, I.G. (2010) A low damage fully self-aligned gate-last process for fabricating sub-100 nm gate length enhancement mode GaAs MOSFETs. In: 54th International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication, June 2010, Anchorage, USA.

Li, X., Zhou, H. , Hill, R.J.W., Longo, P. , Holland, M. , and Thayne, I.G. (2010) Dry etching device quality high-kappa GaxGdyOz gate oxide in SiCl4 chemistry for low resistance ohmic contact realisation in fabricating III-V MOSFETs. Microelectronic Engineering, 87 (5-8). pp. 1587-1589. ISSN 0167-9317 (doi:10.1016/j.mee.2009.11.011)

Li, X., Bentley, S. , McLelland, H. , Holland, M. , Zhou, H. , Thoms, S. , Macintyre, D. , and Thayne, I. (2010) Low damage fully self-aligned replacement gate process for fabricating deep sub-100 nm gate length GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, 28 (6). C6L1. ISSN 1071-1023 (doi:10.1116/1.3501355)

Taking, S., Banerjee, A. , Zhou, H. , Li, X. , MacFarlane, D., Dabiran, A., and Wasige, E. (2010) Thin Al2O3 Formed by Thermal Oxidation of Evaporated Aluminium for AlN/GaN MOS-HEMT Technology. In: UKNC Conference, 12th and 13th January , Cork, Ireland.

2009

Bentley, S., Li, X. , Moran, D. , and Thayne, I.G. (2009) Two methods of realising 10 nm T-gate lithography. Microelectronic Engineering, 86 (4-6). pp. 1067-1070. ISSN 0167-9317 (doi:10.1016/j.mee.2008.12.029)

Li, X., Hill, R.J.W. , Longo, P. , Holland, M.C. , Zhou, H. , Thoms, S. , Macintyre, D.S. , and Thayne, I.G. (2009) Fully self-aligned process for fabricating 100 nm gate length enhancement mode GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, 27 (6). pp. 3153-3157. ISSN 1071-1023 (doi:10.1116/1.3256624)

Thayne, I.G. et al. (2009) Review of current status of III-V MOSFETs. ECS Transactions, 19 (5). pp. 275-286. ISSN 1938-5862 (doi:10.1149/1.3119552)

2008

Bentley, S., Li, X. , Moran, D. A. J. , and Thayne, I. G. (2008) Fabrication of 22 nm T-gates for HEMT applications. Microelectronic Engineering, 85 (5-6). pp. 1375-1378. ISSN 0167-9317 (doi:10.1016/j.mee.2008.01.058)

Hill, R. J. W. et al. (2008) 1 mu m gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 mu S/mm. Electronics Letters, 44 (7). pp. 498-499. ISSN 0013-5194 (doi:10.1049/el:20080470)

Hill, R.J.W., Moran, D.A.J. , Li, X. , Zhou, H. , Macintyre, D.S. , Thoms, S. , Asenov, A. , and Thayne, I.G. (2008) Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics. In: Proceedings of the IEEE Silicon Nanoelectronics Workshop, 15-16 June 2008, Honolulu, Hawaii. IEEE Computer Society, Piscataway, N.J., USA. ISBN 9781424420711

Kalna, K. et al. (2008) III-V MOSFETs for digital applications with silicon co-integration. In: International Conference on Advanced Semiconductor Devices and Microsystems: 12-16 October 2008, Smolenice, Slovakia. IEEE Computer Society, Piscataway, N.J., USA, pp. 39-46. ISBN 9781424423255

Li, X., Hill, R.J.W. , Zhou, H P. , Wilkinson, C.D.W. , and Thayne, I.G. (2008) A low damage Si3N4 sidewall spacer process for self-aligned sub-100 nm III-V MOSFETs. Microelectronic Engineering, 85 (5-6). pp. 996-999. ISSN 0167-9317 (doi:10.1016/j.mee.2007.12.064)

Li, X., Zhou, H.P. , Abrokwah, J., Zurcher, P., Rajagopalan, K., Liu, W., Gregory, R., Passlack, M., and Thayne, I.G. (2008) Low damage ashing and etching processes for ion implanted resist and Si3N4 removal by ICP and RIE methods. Microelectronic Engineering, 85 (5-6). pp. 966-968. ISSN 0167-9317 (doi:10.1016/j.mee.2007.12.056)

1996

Zhao, Z., Lee, C.C., Monckton, D.G. , Yazdani, A., Coolbaugh, M., Li, X. , Bailey, J., Shen, Y., and Caskey, C.T. (1996) Characterization and genomic mapping of genes and pseudogenes of a new human protein tyrosine phosphatase. Genomics, 35 (1). 172 -181. ISSN 0888-7543 (doi:10.1006/geno.1996.0336)