Mr Xingsheng Wang

  • Research Assistant (Electronic and Nanoscale Engineering)

email: Xingsheng.Wang@glasgow.ac.uk


Jump to: 2012 | 2011 | 2010 | 2009 | 2008
Number of items: 20.

2012

Wang, X., Roy, G., Saxod, O., Bajolet, A., Juge, A., and Asenov, A. (2012) Simulation study of dominant statistical variability sources in 32-nm high-k/metal gate CMOS. IEEE Electron Device Letters, 33 (5). pp. 643-645. ISSN 0741-3106 (doi:10.1109/LED.2012.2188268)

2011

Benbakhti, B. et al. (2011) Numerical analysis of the new implant-free quantum-well CMOS: DualLogic approach. Solid-State Electronics, 63 (1). pp. 14-18. ISSN 00381101 (doi:10.1016/j.sse.2011.05.006)

Wang, X., Roy, S. , Brown, A.R. , and Asenov, A. (2011) Impact of STI on statistical variability and reliability of decananometer MOSFETs. IEEE Electron Device Letters, 32 (4). pp. 479-481. ISSN 0741-3106 (doi:10.1109/LED.2011.2108256)

Abid, K., Wang, X. , Khokhar, A.Z. , Watson, S., Al-Hasani, S., and Rahman, F. (2011) Electrically tuneable spectral responsivity in gated silicon photodiodes. Applied Physics Letters, 99 (23). p. 231104. ISSN 0003-6951 (doi:10.1063/1.3665613)

Markov, S., Wang, X. , Moezi, N., and Asenov, A. (2011) Drain current collapse in nanoscaled bulk MOSFETs due to random dopant compensation in the source/drain extensions. IEEE Transactions on Electron Devices, 58 (8). pp. 2385-2393. ISSN 0018-9383 (doi:10.1109/TED.2011.2152845)

Wang, X., Brown, A.R. , Cheng, B. , and Asenov, A. (2011) Statistical variability and reliability in nanoscale FinFETs. In: IEEE International Electron Devices Meeting (IEDM), 5-7 Dec 2011, Washington DC, USA.

Wang, X., Brown, A.R. , Idris, N., Markov, S. , Roy, G. , and Asenov, A. (2011) Statistical threshold-voltage variability in scaled decananometer bulk HKMG MOSFETs: a full-scale 3-D simulation scaling study. IEEE Transactions on Electron Devices, 58 (8). pp. 2293-2301. ISSN 0018-9383 (doi:10.1109/TED.2011.2149531)

2010

Bindu, B., Cheng, B. , Roy, G. , Wang, X. , Roy, S. , and Asenov, A. (2010) Parameter set and data sampling strategy for accurate yet efficient statistical MOSFET compact model extraction. Solid-State Electronics, 54 (3). pp. 307-315. ISSN 0038-1101 (doi:10.1016/j.sse.2009.09.028)

Benbakhti, B. et al. (2010) Performance analysis of the new implant-free quantum-well CMOS : DualLogic approach. Solid State Electronics Journal . (Unpublished)

Benbakhti, B., Kalna, K. , Wang, X. , Cheng, B. , Hellings, G., Eneman, G., De Meyer, K., Meuris, M., and Asenov, A. (2010) Impact of Raised Source/Drain in the In53Ga47As Channel Implant-Free Quantum-Well Transistor. In: 11th International Conference on Ultimate Integration Silicon (ULIS), 2010, Glasgow, UK.

Cheng, B., Dideban, D., Moezi, N., Millar, C. , Roy, G. , Wang, X. , Roy, S. , and Asenov, A. (2010) Capturing intrinsic parameter fluctuations using the PSP compact model. In: Proceedings of the Conference on Design, Automation and Test in Europe (DATE 2010), 8-12 March 2010, Dresden, Germany.

Cheng, B.J., Dideban, D., Moezi, N., Millar, C. , Roy, G. , Wang, X. , Roy, S. , and Asenov, A. (2010) Statistical-variability compact-modeling strategies for BSIM4 and PSP. IEEE Design and Test of Computers, 27 (2). pp. 26-35. ISSN 0740-7475 (doi:10.1109/MDT.2010.53)

Dideban, D., Cheng, B. , Moezi, N., Wang, X. , and Asenov, A. (2010) Evaluation of 35nm MOSFET capacitance components in PSP compact model. In: 18th Iranian Conference on Electrical Engineering (ICEE), 2010 , 11-13 May 2010, Isfahan, Iran.

Kamsani, N.A., Cheng, B. , Millar, C. , Moezi, N., Wang, X. , Roy, S. , and Asenov, A. (2010) Impact of slew rate definition on the accuracy of nanoCMOS inverter timing simulations. In: 11th International Conference on Ultimate Integration on Silicon, 17-19 Mar 2010, Glasgow, Scotland.

2009

Wang, X.S., Roy, S. , and Asenov, A. (2009) Impact of strain on the performance of high-k/metal replacement gate MOSFETs. In: 10th International Conference on Ultimate Integration of Silicon, 18-20 March 2009, Aachen, Germany.

2008

Asenov, A. et al. (2008) Advanced simulation of statistical variability and reliability in nano CMOS transistors. In: IEDM 2008. IEEE International Electron Devices Meeting, 2008, 15-17 Dec 2008 , San Francisco, CA.

Bindu, B., Cheng, B. , Roy, G. , Wang, X. , Roy, S. , and Asenov, A. (2008) An efficient data sampling strategy for statistical parameter extraction of nano-MOSFETs. In: IEEE Workshop on Compact Modeling, 8 Sept 2008, Hakone, Japan.

Wang, X., Cheng, B. , Roy, S. , and Asenov, A. (2008) Simulation of strain enhanced variability in nMOSFETs. In: 9th International Conference on Ultimate Integration of Silicon, 2008. ULIS 2008., 12-14 March 2008, Udine, Italy.

Wang, X., Roy, S. , and Asenov, A. (2008) High performance MOSFET scaling study from bulk 45nm technology generation. In: Proceeding of the 9th International Conference on Solid-State and Integrated-Circuit Technology: 20-23 October 2008, Beijing, China. IEEE Computer Society, Piscataway, N.J., USA, pp. 484-487. ISBN 9781424421855

Wang, X., Roy, S. , and Asenov, A. (2008) Impact of strain on LER variability in bulk MOSFETs. In: Proceedings of the 38th European Solid-state Device Research Conference, 15-19 September 2008, Edinburgh, UK. IEEE Computer Society, Piscataway, N.J., USA, pp. 190-193. ISBN 9781424423637

This list was generated on Thu May 24 18:52:03 2012 BST.