2011

Martyniuk, M. et al. (2011) Electrical type conversion of p-type HgCdTe induced by nanoimprinting. Journal of Applied Physics, 109 (9). 096102. ISSN 0021-8979 (doi:10.1063/1.3582062)

Bentley, S. et al. (2011) Electron mobility in surface- and buried- channel flatband In_0.53Ga_0.47As MOSFETs with ALD Al₂O₃ gate dielectric. IEEE Electron Device Letters, 32 (4). pp. 494-496. ISSN 0741-3106 (doi:10.1109/LED.2011.2107876)

2010

Thoms, S., and Macintyre, D.S. (2010) Linewidth metrology for sub-10 nm lithography. Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, 28 (6). C6H6-C6H10. ISSN 1071-1023 (doi:10.1116/1.3505129)

The University Court of the University of Glasgow; Weaver, Jonathan M.R.; Dobson, Phillip S.; Burt, David P.; Thoms, Stephen; Docherty, Kevin E.; Zhang, Yuan (2010) Uses of Electromagnetic Interference Patterns. .

Ignatova, O., Macintyre, D.S. , and Thoms, S. (2010) Gate stack processing effects on III-V nMOSFET performance. In: 19th European Workshop on Heterostructure Technology, 18-20 Oct 2010, Crete, Greece.

Ignatova, O., Thoms, S. , Jansen, W., Macintyre, D.S. , and Thayne, I.G. (2010) Lithography scaling issues associated with III-V MOSFETs. Microelectronic Engineering, 87 (5-8). pp. 1049-1051. ISSN 0167-9317 (doi:10.1016/j.mee.2009.11.093)

Li, X., Bentley, S. , Holland, M.C. , Zhou, H. , Thoms, S. , Macintyre, D.S. , and Thayne, I.G. (2010) A low damage fully self-aligned gate-last process for fabricating sub-100 nm gate length enhancement mode GaAs MOSFETs. In: 54th International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication, June 2010, Anchorage, USA.

Li, X., Bentley, S. , McLelland, H., Holland, M. , Zhou, H. , Thoms, S. , Macintyre, D.S. , and Thayne, I. (2010) Low damage fully self-aligned replacement gate process for fabricating deep sub-100 nm gate length GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, 28 (6). ISSN 1071-1023 (doi:10.1116/1.3501355)

Li, X., Bentley, S. , McLelland, H. , Holland, M. , Zhou, H. , Thoms, S. , Macintyre, D. , and Thayne, I. (2010) Low damage fully self-aligned replacement gate process for fabricating deep sub-100 nm gate length GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, 28 (6). C6L1. ISSN 1071-1023 (doi:10.1116/1.3501355)

Pedersen, R.H., Hamzah, M., Thoms, S. , Roach, P., Alexander, M.R., and Gadegaard, N. (2010) Electron beam lithography using plasma polymerized hexane as resist. Microelectronic Engineering, 87 (5-8). pp. 1112-1114. ISSN 0167-9317 (doi:10.1016/j.mee.2009.11.043)

Thoms, S., and Macintyre, D.S. (2010) Linewidth measurement for sub-10 nm lithography. In: 54th International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication, June 2010, Anchorage, USA.

2009

Macintyre, D.S., Ignatova, O., Thoms, S. , and Thayne, I.G. (2009) Resist residues and transistor gate fabrication. Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, 27 (6). pp. 2597-2601. ISSN 1071-1023 (doi:10.1116/1.3243176)

Li, X., Hill, R.J.W. , Longo, P. , Holland, M.C. , Zhou, H. , Thoms, S. , Macintyre, D.S. , and Thayne, I.G. (2009) Fully self-aligned process for fabricating 100 nm gate length enhancement mode GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, 27 (6). pp. 3153-3157. ISSN 1071-1023 (doi:10.1116/1.3256624)

Martyniuk, M., Sewell, R.H., Westerhout, R., Musca, C.A., Dell, J.M., Antoszewski, J., Faraone, L., Macintyre, DS. , Thoms, S. , and Ironside, C.M. (2009) Photovoltaic detectors fabricated by direct imprinting of mercury cadmium telluride. In: Lasers and Electro-Optics and Quantum Electronics and Laser Science Conference, 1-5 June 2009, Baltimore, USA.

Thayne, I.G. et al. (2009) Review of current status of III-V MOSFETs. ECS Transactions, 19 (5). pp. 275-286. ISSN 1938-5862 (doi:10.1149/1.3119552)

2008

Hill, R.J.W. et al. (2008) 1 μm gate length, In_0.75Ga_0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737μS/μm. Electronics Letters, 44 . pp. 498-500. ISSN 0013-5194 (doi:10.1049/el:20080470)

Docherty, K.E., Thoms, S. , Dobson, P. , and Weaver, J.M.R. (2008) Improvements to the alignment process in a commercial vector scan electron beam lithography tool. Microelectronic Engineering, 85 (5-6). pp. 761-763. ISSN 0167-9317 (doi:10.1016/j.mee.2008.01.081)

Gnan, M., Thoms, S. , Macintyre, D. S. , De La Rue, R. M. , and Sorel, M. (2008) Fabrication of low-loss photonic wires in silicon-on-insulator using hydrogen silsesquioxane electron-beam resist. Electronics Letters, 44 (2). pp. 115-116. ISSN 0013-5194 (doi:10.1049/el:20082985)

Hill, R. J. W. et al. (2008) 1 mu m gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 mu S/mm. Electronics Letters, 44 (7). pp. 498-499. ISSN 0013-5194 (doi:10.1049/el:20080470)

Hill, R.J.W., Moran, D.A.J. , Li, X. , Zhou, H. , Macintyre, D.S. , Thoms, S. , Asenov, A. , and Thayne, I.G. (2008) Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics. In: Proceedings of the IEEE Silicon Nanoelectronics Workshop, 15-16 June 2008, Honolulu, Hawaii. IEEE Computer Society, Piscataway, N.J., USA. ISBN 9781424420711

Kalna, K. et al. (2008) III-V MOSFETs for digital applications with silicon co-integration. In: International Conference on Advanced Semiconductor Devices and Microsystems: 12-16 October 2008, Smolenice, Slovakia. IEEE Computer Society, Piscataway, N.J., USA, pp. 39-46. ISBN 9781424423255

Samarelli, A., Macintyre, D. S. , Strain, M. J. , De La Rue, R. M. , Sorel, M. , and Thoms, S. (2008) Optical characterization of a hydrogen silsesquioxane lithography process. Journal of Vacuum Science and Technology B, 26 (6). pp. 2290-2294. ISSN 1071-1023 (doi:10.1116/1.2998694)

Thoms, S., Gnan, M., Macintyre, D. , Samarelli, A. , Sorel, M. , Strain, M. , and De La Rue, R. (2008) Optical characterisation of an HSQ lithography process. In: International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN), 27-30 May 2008, Portland, USA.

2007

Passlack, M. et al. (2007) High mobility III-V MOSFETs for RF and digital applications. In: IEEE International Electron Devices Meeting (IEDM 2007), 10-12 December 2007, Washington DC, USA.

Hill, R.J.W., Moran, D.A.J. , Li, X., Zhou, H. , Macintyre, D. , Thoms, S. , Droopad, R., Passlack, M., and Thayne, I.G. (2007) 180 nm metal gate, high-k dielectric, implant free III-V MOSFETs with transconductance of over 425μS/μm. Electronics Letters, 43 . pp. 543-545. ISSN 0013-5194 (doi:10.1049/el:20070427)

Gnan, M., Macintyre, D. S. , Sorel, M. , De La Rue, R.M. , and Thoms, S. (2007) Enhanced stitching for the fabrication of photonic structures by electron beam lithography. Journal of Vacuum Science and Technology B, 25 (6). pp. 2034-2037. ISSN 1071-1023 (doi:10.1116/1.2800325)

Moran, D.A.J. et al. (2007) Sub-micron, metal gate, high-к dielectric, implant-free, enhancement-mode III-V MOSFETs. In: 37th European Solid State Device Research Conference (ESSDERC 2007), 11-13 September 2007, Munich, Germany.

Rajagopalan, K. et al. (2007) Enhancement mode n-MOSFET with high-k dielectric on GaAs substrate. In: IEEE 65th Annual Device Research Conference, 18-20 June 2007, South Bend, Indiana, USA.

Thayne, I, Elgaid, K , Moran, D , Cao, X, Boyd, E, McLelland, H, Holland, M, Thoms, S , and Stanley, C (2007) 50 nm metamorphic GaAs and InPHEMTs. Thin Solid Films, 515 . pp. 4373-4377. (doi:10.1016/j.tsf.2006.07.104)

Thoms, S, and Macintyre, DS (2007) Tilt-corrected stitching for electron beam lithography. Microelectronic Engineering, 84 . pp. 793-796. (doi:10.1016/j.mee.2007.01.127)

2006

Elgaid, K, Holland, MC , McLelland, H , Moran, DAJ , Thoms, S , Stanley, CR , and Thayne, IG (2006) 50nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications. In: Indium Phosphide & Related Materials, Princeton, USA.

Li, X, Cao, X, Zhou, H, Wilkinson, CDW, Thoms, S , Macintyre, D , Holland, M, and Thayne, IG (2006) 30 nm Tungsten gates etched by a low damage ICP etching for the fabrication of compound semiconductor transistors. Microelectronic Engineering, 83 . pp. 1152-1154. (doi:10.1016/j.mee.2006.01.073)

Li, X, Cao, X, Zhou, H, Wilkinson, CDW, Thoms, S , Macintyre, D , Holland, M, and Thayne, IG (2006) A low damage RIE process for the fabrication of compound semiconductor based transistors with sub-100 nm tungsten gates. Microelectronic Engineering, 83 . pp. 1159-1162. (doi:10.1016/j.mee.2006.01.074)

MacIntyre, DS, and Thoms, S (2006) Nanometre scale overlay and stitch metrology using an optical microscope. Microelectronic Engineering, 83 . pp. 1051-1054. (doi:10.1016/j.mee.2006.01.022)

Macintyre, D.S., Young, I., Glidle, A. , Cao, X., Weaver, J.M.R. , and Thoms, S. (2006) High resolution e-beam lithography using a thin titanium layer to promote resist adhesion. Microelectronic Engineering, 83 (4-9). pp. 1128-1131. ISSN 0167-9317 (doi:10.1016/j.mee.2006.01.103)

OFaolain, L, Yuan, X, McIntyre, D, Thoms, S , Chong, H, De la Rue, RM , and Krauss, TF (2006) Low-loss propagation in photonic crystal waveguides. Electronics Letters, 42 . pp. 1454-1455. (doi:10.1049/el)

Thayne, IG et al. (2006) III-V MOSFETs for Digital Applications: an overview. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.

Thayne, I., Elgaid, K. , Holland, M., McLelland, H., Moran, D.A.J. , Thoms, S. , and Stanley, C. (2006) 50 nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications. In: 2006 International Conference on Indium Phosphide and Related Materials, 7-11 May 2006, Princeton, New Jersey, USA.

2005

Cao, X et al. (2005) Low damage sputter deposition of tungsten for decanano compound semiconductor transistors. Journal of Vacuum Science and Technology B, 23 . pp. 3138-3142. (doi:10.1116/1.2127937)

Li, X, Cao, X, Zhou, H , Wilkinson, CDW , Thoms, S , Macintyre, DS , Holland, MC , and Thayne, IG (2005) 30nm tungsten gates etched by a low damage ICP etching for the fabrication of compound semiconductor transistors. In: 31st International Conference on Micro and Nano-Engineering 2005, Vienna, Austria.

Li, X, Cao, X, Zhou, H , Wilkinson, CDW , Thoms, S , Macintyre, DS , Holland, MC , and Thayne, IG (2005) A low damage RIE process for the fabrication of cmpound semiconductor based transistors wtih sub-100nm tungsten gates. In: 31st International Conference on Micro and Nano-Engineering 2005, Vienna, Austria.

Macintyre, DS, and Thoms, S (2005) A study of resist flow during nanoimprint lithography. Microelectronic Engineering, 78-79 . pp. 670-675. (doi:10.1016/j.mee.2004.12.083)

Makarovsky, O, Neumann, A, Walker, D, Patane, A, Eaves, L, Henini, M, Thoms, S , and Wilkinson, CDW (2005) Quasiballistic transport of hot holes in GaAs submicron channels. Applied Physics Letters, 86 . (doi:10.1063/1.1851003)

Moran, DAJ, Cao, X, Elgaid, K , Boyd, E, Chen, Y, Thoms, S , McLelland, H , Stanley, CR , Holland, MC , and Thayne, IG (2005) Sub 100nm III-V HEMT technology: Approaching the Terahertz Regime. In: International Workshop on Terahertz Technology, Osaka, Japan.

Thayne, IG, Elgaid, K , Moran, DAJ , Cao, X, Boyd, E, McLelland, H , Holland, MC , Thoms, S , and Stanley, CR (2005) 50nm Metamorphic GaAs and InP HEMTs. In: 3rd International Conference for Advanced Materials and Technologies, Singapore.

2004

Cao, X., Thoms, S. , Macintyre, D. , McLelland, H., Boyd, E., Elgaid, K. , Hill, R., Stanley, C.R. , and Thayne, I.G. (2004) Fabrication and performance of 50 nm T-gates for InP high electron mobility transistors. Microelectronic Engineering, 73-74 . pp. 818-821. ISSN 0167-9317 (doi:10.1016/j.mee.2004.03.058)

Boyd, E, Thoms, S , Moran, DAJ , Elgaid, K , Cao, X, Holland, M, Stanley, CR , and Thayne, IG (2004) Fabrication of very high performance 50nm T-gate metamorphic GaAs HEMT's with exceptional uniformity. In: European Gallium Arsenide and other Compound Semiconductors Application Symposium,GaAs 2004, Amsterdam, The Netherlands.

Boyd, E, Zhou, H , McLelland, H , Moran, DAJ , Thoms, S , and Thayne, IG (2004) Fabrication of 30nm T-gate high electron mobility transistors using bi-layer of PMMA and UVIII. In: Conference on Optoelectronic and Microelectronic materials and devices 2004, Brisbane, Australia.

Boyd, E., Zhou, H. , McLelland, H. , Moran, D.A.J. , Thoms, S. , and Thayne, I.G. (2004) Fabrication of 30nm T-gate high electron mobility transistors using a bi-Layer of PMMA and UVIII. In: 2004 IEEE Conference on Optoelectronic and Microelectronic Materials and Devices, 8-10 December 2004, Brisbane, Australia.

Cao, X, Thoms, S , Stanley, CR , and Thayne, IG (2004) High yield, high uniformity, high performance 50nm T-gate In0.52Al0.48As/In0.7Ga0.3As. In: 7th International Conference on Solid State and Intergrated Circuit Technology, Beijing, China.

Elgaid, K, McLelland, H , Cao, X, Boyd, E, Moran, DAJ , Thoms, S , Zhou, H , Wilkinson, CDW , Stanley, CR , and Thayne, IG (2004) An array-based design methodology for the realisation of 94GHz MMMIC amplifiers. In: European Gallium Arsenide and other Compound Semiconductors Application Symposium,GaAs 2004, Amsterdam, The Netherlands.

Lister, KA, Casey, BG, Dobson, PS , Thoms, S , Macintyre, DS , Wilkinson, CDW, and Weaver, JMR (2004) Pattern transfer of a 23 nm-period grating and sub-15 nm dots into CVD diamond. Microelectronic Engineering, 73-4 . pp. 319-322. (doi:10.1016/j.mee.2004.02.060)

Lister, KA, Thoms, S , Macintyre, DS , Wilkinson, CDW, Weaver, JMR , and Casey, BG (2004) Direct imprint of sub-10 nm features into metal using diamond and SiC stamps. Journal of Vacuum Science and Technology B, 22 . pp. 3257-3259. (doi:10.1116/1.1825010)

Thayne, IG, Cao, X, Moran, DAJ , Boyd, E, Elgaid, K , McLelland, H , Holland, M, Thoms, S , and Stanley, CR (2004) Very high performance 50nm T-gate III-V HEMTs enabled by robust nanofabrication technologies. In: 4th IEEE Conference on Nanotechnology, Munich, Germany.

Thayne, I., Cao, X., Moran, D.A.J. , Boyd, E., Elgaid, K. , McLelland, H., Holland, M., Thoms, S. , and Stanley, C. (2004) Very high performance 50 nm T-gate III-V HEMTs enabled by robust nanofabrication technologies. In: 4th IEEE Conference on Nanotechnology 2004, 16-19 August 2004, Munich, Germany.

Thoms, S, Macintyre, DS , Elgaid, K , Stanley, CR , and Thayne, IG (2004) The use of imprint lithography to fabricate high electron mobility transistors. In: International Conference on Electron, Photon, Ion beams and Nanofabrication, San Diego, USA.

Thoms, S, Macintyre, DS , Moran, D , and Thayne, I (2004) Imprint lithography issues in the fabrication of high electron mobility transistors. Journal of Vacuum Science and Technology B, 22 . pp. 3271-3274. (doi:10.1116/1.1821504)

2003

Chen, Y., MacIntyre, D.S., Cao, X., Boyd, E., Moran, D.A.J. , McLelland, H., Holland, M., Stanley, C.R. , Thayne, I. , and Thoms, S. (2003) Fabrication of ultrashort T gates using a PMMA/LOR/UVIII resist stack. Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, 21 (6). pp. 3012-3016. ISSN 1071-1023 (doi:10.1116/1.1629292)

Moran, D., Boyd, E., McLelland, H., Elgaid, K. , Chen, Y., Macintyre, D.S. , Thoms, S. , Stanley, C.R. , and Thayne, I.G. (2003) Novel technologies for the realisation of GaAs pHEMTs with 120 nm self-aligned and nanoimprinted T-gates. Microelectronic Engineering, 67-89 . pp. 769-774. ISSN 0167-9317 (doi:10.1016/S0167-9317(03)00137-0)

Cao, X, Boyd, E, McLelland, H , Thoms, S , Stanley, CR , and Thayne, IG (2003) mm-wave performance of 50nm T-gate AlGaAs/InGaAs pseudomorphic high electron mobility transistors with fT of 200GHz. In: European Microwave Conference, Munich, Germany.

Cao, X, Thoms, S , Holland, MC , Stanley, CR , and Thayne, IG (2003) High performance 50nm T-gate In0.25AlAs/In0.53GaAs Metamorphic high electron mobility transistors. In: ESSDERC 2003 - European Solid-State Device Research Conference, Estoril, Portugal.

Cao, X, Thoms, S , Holland, MC , Stanley, CR , and Thayne, IG (2003) mm-wave performance of 50nm T-gate In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistors. In: European Microwave Conference, Munich, Germany.

Cao, X, Thoms, S , Macintyre, DS , McLelland, H , Boyd, E, Elgaid, K , Hill, R , Stanley, CR , and Thayne, IG (2003) Fabrication and performance of 50nm T-gate for high electron mobility transistors. In: Microelectronic and Nanoelectronic Engineering 2003, Cambridge, UK.

Chen, Y, Macintyre, DS , Boyd, E, Moran, D , Thayne, I , and Thoms, S (2003) High electron mobility transistors fabricated by nanoimprint lithography. Microelectronic Engineering, 67-8 . pp. 189-195. (doi:10.1016/S0167-9317(03)00183-7)

Chen, Y, Macintyre, DS , Gourlay, D, Boyd, E, Moran, D, Cao, X, Thayne, IG , and Thoms, S (2003) The fabrication of 50nm T-gates using a PMMA.LOR.UVIII resist stack. In: EIPBN 2003 - Electron, ion and photon beam tehcnology and nanofabrication, Tampa, USA.

Chen, Y, Macintyre, DS , and Thoms, S (2003) A non-destructive method for the removal of residual resist in imprinted patterns. Microelectronic Engineering, 67-8 . pp. 245-251. (doi:10.1016/S0167-9317(03)00184-9)

Gadegaard, N, Thoms, S , Macintyre, DS , Mcghee, K, Gallagher, J, Casey, B, and Wilkinson, CDW (2003) Arrays of nano-dots for cellular engineering. Microelectronic Engineering, 67-8 . pp. 162-168. (doi:10.1016/S0167-9317(03)00067-4)

Macintyre, DS, Chen, Y, Gourlay, D, Boyd, E, Moran, D , Cao, X, Elgaid, K , Stanley, CR , Thayne, I , and Thoms, S (2003) Nanoimprint lithography process optimization for the fabrication of high electron mobility transistors. Journal of Vacuum Science and Technology B, 21 . pp. 2783-2787. (doi:10.1116/1.1629719)

Makarovsky, O et al. (2003) Nonlinear hole transport through a submicron-size channel. Applied Physics Letters, 82 . pp. 925-927. (doi:10.1063/1.1543643)

Moran, D, Boyd, E, McLelland, H, Elgaid, K , Chen, Y, Macintyre, DS , Thoms, S , Stanley, CR , and Thayne, IG (2003) Novel technologies for the realisation of GaAs pHEMTs with 120 nm self-aligned and nanoimprinted T-gates. Microelectronic Engineering, 67-8 . pp. 769-774. (doi:10.1016/S0167-9317(03)00137-0)

2002

Boyd, E, Moran, D, McLelland, H , Elgaid, K , Chen, Y, Macintyre, DS , Thoms, S , Stanley, CR , and Thayne, IG (2002) 120nm gate length e-beam and nanoimprint T-gate GaAs pHEMTs itilising non-annealed ohmic contacts. In: International Symposium on Compound Semiconductors, Lausanne, Switzerland.

Chen, Y, Macintyre, D , Boyd, E, Moran, D , Thayne, I , and Thoms, S (2002) Fabrication of high electron mobility transistors with T-gates by nanoimprint lithography. Journal of Vacuum Science and Technology B, 20 . pp. 2887-2890. (doi:10.1116/1.1520564)

Edgar, DL et al. (2002) Millimeter-wave performance of In/AlAs/InGaAs HEMT's using a UVIII/PMMA bilayer for 70nm T-gate fabrication. In: European Microwave Conference, Milan, Italy.

Hong, J, Kubrak, V, Edmonds, KW, Neumann, AC, Gallagher, BL, Main, PC, Henini, M, Marrows, CH, Hickey, BJ, and Thoms, S (2002) Quasi-ballistic transport of 2D electrons through magnetic barriers. Physica E: Low-Dimensional Systems and Nanostructures, 12 . pp. 229-232. ISSN 1386-9477

Macintyre, D.S., and Thoms, S. (2002) High-resolution lithography. In: McGeough, J.A. (ed.) Micromachining of Engineering Materials. Series: Mechanical engineering (139). Marcel Dekker, New York, USA, pp. 325-368. ISBN 9780824706449

Makarovsky, O, Neumann, A, Dickinson, LA, Eaves, L, Main, PC, Henini, M, Thoms, S , and Wilkinson, CDW (2002) Quantum Hall effect breakdown: can the bootstrap heating and inter-Landau-level scattering models be reconciled? Physica E: Low-Dimensional Systems and Nanostructures, 12 . pp. 178-181. ISSN 1386-9477

Moran, D, Boyd, E, McLelland, H , Elgaid, K , Chen, Y, Macintyre, DS , Thoms, S , Stanley, CR , and Thayne, IG (2002) Novel technologies for the realisation of GaAs pHEMTs wtih 20nm self-aligned and nanoimprinted T-gates. In: Micro- and NanoEngineering 2002, Lugano, Switzerland.

Thoms, S., and Macintyre, D.S. (2002) High resolution lithography. In: McGeough, J.A. (ed.) Micromachining of Engineering Materials. Series: Mechanical engineering (139). Marcel Deckker, New York, USA. ISBN 9780824706449

2001

Chen, Y, Macintyre, DS , and Thoms, S (2001) Effect of resist sensitivity ratio on T-gate fabrication. Journal of Vacuum Science and Technology B, 19 . pp. 2494-2498.

Edmonds, KW, Gallagher, BL, Main, PC, Overend, N, Wirtz, R, Nogaret, A, Henini, M, Marrows, CH, Hickey, BJ, and Thoms, S (2001) Magnetoresistance oscillations due to internal Landau band structure of a two-dimensional electron system in a periodic magnetic field. Physical Review B, 64 .

Gallagher, BL, Kubrak, V, Rushforth, AW, Neumann, AC, Edmonds, KW, Main, PC, Henini, M, Marrows, CH, Hickey, BJ, and Thoms, S (2001) Electrical transport of 2D electrons in non-uniform magnetic fields. Physica E, 11 . pp. 171-176.

Kubrak, V, Edmonds, KW, Neumann, AC, Gallagher, BL, Main, PC, Henini, M, Marrows, CH, Hickey, BJ, and Thoms, S (2001) Giant magnetoresistance induced by magnetic barriers. IEEE Transactions on Magnetics, 37 . pp. 1992-1994.

Macintyre, DS, Chen, Y, Lim, D, and Thoms, S (2001) Fabrication of T gate structures by nanoimprint lithography. Journal of Vacuum Science and Technology B, 19 . pp. 2797-2800.

Stallard, WG, Plaut, AS, Thoms, S , Holland, MC, Beaumont, SP , Stanley, CR , and Hopkinson, M (2001) Fermi-edge singularities in a one-dimensional electron system in magnetic field. Solid State Communications, 119 . pp. 55-58.

Thoms, S (2001) T-gate fabrication using a ZEP520A/UVIII bilayer. Microelectronic Engineering, 57-58 . pp. 939-943.