2012

Markov, S., Cheng, B. , and Asenov, A. (2012) Statistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions. IEEE Electron Device Letters, 33 (3). pp. 315-317. ISSN 0741-3106 (doi:10.1109/LED.2011.2179114)

2011

Markov, S., Idris, N.M., and Asenov, A. (2011) Statistical variability in n-channel UTB-FD-SOI MOSFETs under the influence of RDF, LER, MGG and PBTI. In: 2011 IEEE International SOI Conference, 3-6 Oct 2011, Tempe, AZ.

Markov, S., Wang, X. , Moezi, N., and Asenov, A. (2011) Drain current collapse in nanoscaled bulk MOSFETs due to random dopant compensation in the source/drain extensions. IEEE Transactions on Electron Devices, 58 (8). pp. 2385-2393. ISSN 0018-9383 (doi:10.1109/TED.2011.2152845)

Wang, X., Brown, A.R. , Idris, N., Markov, S. , Roy, G. , and Asenov, A. (2011) Statistical threshold-voltage variability in scaled decananometer bulk HKMG MOSFETs: a full-scale 3-D simulation scaling study. IEEE Transactions on Electron Devices, 58 (8). pp. 2293-2301. ISSN 0018-9383 (doi:10.1109/TED.2011.2149531)

2010

Markov, S., Roy, S. , and Asenov, A. (2010) Direct tunnelling gate leakage variability in nano-CMOS Transistors. IEEE Trans. Electron Dev, 57 (11). pp. 3106-3114.

Markov, S., Shushko, P., Fiegna, C., Sangiorgi, E., Shluger, A., and Asenov, A. (2010) From ab initio properties of the Si-Si0₂ interface, to electrical characteristics of metal-oxide-semiconductor devices. Journal of Physics: Conference Series, 242 (1). ISSN 1742-6588 (doi:10.1088/1742-6596/242/1/012010)

2008

Markov, S., Sushko, P. V., Roy, S. , Fiegna, C., Sangiorgi, E., Shluger, A. L., and Asenov, A. (2008) Si-Sio(2) interface band-gap transition - effects on MOS inversion layer. Physica Status Solidi. A: Applications and Materials Science, 205 (6). pp. 1290-1295. ISSN 1862-6300 (doi:10.1002/pssa.200778154)

Markov, S., Roy, S. , Fiegna, C., Sangiorgi, E., and Asenov, A. (2008) On the sub-nm EOT scaling of high-kappa gate stacks. In: International Conference on the Ultimate Integration of Silicon, 13-14 Mar 2008, Udine, Italy.

2006

Markov, S, Brown, AR , Cheng, B , Roy, G , Roy, S , and Asenov, A (2006) 3D statistical simulation of gate leakage fluctutations due to combined interface roughness and random dopants. In: International Conference on Solid State Devices and Materials. (SSDM 2006)., Yokohama,Japan.