Mr Sankar Peralagu

  • Research Associate (Electronic and Nanoscale Engineering)

telephone: 0141 330 5226
email: Sankar.Peralagu@glasgow.ac.uk

Publications

List by: Type | Date

Jump to: 2017 | 2016 | 2015 | 2014 | 2013 | 2010 | 2008
Number of items: 21.

2017

Fu, Y.-C., Peralagu, U. , Lin, J., Povey, I., Millar, D. A.J., Monaghan, S., Droopad, R., Hurley, P. K. and Thayne, I. G. (2017) The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors. Applied Physics Letters, 110(14), 142905. (doi:10.1063/1.4980012)

Thayne, I., Li, X., Millar, D., Fu, Y.-C. and Peralagu, U. (2017) Plasma Processing of III-V Materials for Energy Efficient Electronics Applications. In: Advanced Etch Technology for Nanopatterning VI, San Jose, CA, USA, 27 Feb - 01 Mar 2017, 101490R. (doi:10.1117/12.2257863)

Millar, D., Peralagu, U. , Li, X., Fu, Y.-C., Gaspar, G., Hurley, P. and Thayne, I. (2017) Improving the electrical properties of the In0.3Ga0.7Sb-Al2O3 interface via in-situ H2 plasma and TMA exposure. In: 20th Conference on Insulating Films on Semiconductors (INFOS 2017), Potsdam, Germany, 27-30 Jun 2017, (Accepted for Publication)

2016

Millar, D., Peralagu, U. , Fu, Y.-C., Li, X., Steer, M. and Thayne, I. (2016) Initial Investigation on the Impact of In Situ Hydrogen Plasma Exposure to the Interface Between Molecular Beam Epitaxially Grown P-Ga0.7In0.3Sb (100) and Thermal Atomic Layer Deposited (ALD) Al2O3. In: 19th Workshop on Dielectrics in Microelectronics (WoDIM), Aci Castello, Catania, Italy, 27-30 Jun 2016,

Li, X., Fu, Y.-C., Millar, D.A.J., Peralagu, U. , Steer, M. and Thayne, I.G. (2016) The Impact of an HBr/Ar Atomic Layer Etch (ALE) Process for InGaAs Vertical Nanowire Diameter Reduction on the Interface Between InGaAs and In-situ ALD Deposited HfO2. In: 47th IEEE Semiconductor Interface Specialists Conference (SISC 2016), San Diego, CA, USA, 8-10 Dec 2016, (Accepted for Publication)

2015

Fu, Y.-C., Peralagu, U. , Li, X., Ignatova, O., Millar, D. A. J., Steer, M., Droopad, R. and Thayne, I. (2015) First Demonstration of Cluster Tool Based ICP Etching of (100) and (110) InGaAs MOSCAPs Followed by In-Situ ALD Deposition of HfO2 Including Nitrogen and Hydrogen Plasma Passivation for Non-Planar III-V MOSFETs. In: 46th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 02-05 Dec 2015,

Peralagu, U. et al. (2015) (Invited) towards a vertical and damage free post-etch InGaAs fin profile: dry etch processing, sidewall damage assessment and mitigation options. ECS Transactions, 69(5), pp. 15-36. (doi:10.1149/06905.0015ecst)

Fu, Y.-C., Peralagu, U. , Ignatova, O., Li, X., Droopad, R., Thayne, I., Lin, J., Povey, I., Monaghan, S. and Hurley, P. (2015) Energy-Band Structure of Atomic Layer Deposited Al2O3 & Sulphur Passivated Molecular Beam Epitaxially Grown (110) In0.53Ga0.47As Surfaces. In: 11th Conference on PhD Research in Microelectronics and Electronics (IEEE PRIME 2015), Glasgow, UK, 29 June - 2 July 2015,

Fu, Y.-C., Peralagu, U. , Ignatova, O., Li, X., Lin, J., Povey, I., Monaghan, S., Droopad, R., Hurley, P. and Thayne, I. (2015) Energy-band parameter of atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces. In: 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Glasgow, UK, 29 Jun - 02 Jul 2015, pp. 346-348. (doi:10.1109/PRIME.2015.7251406)

2014

Peralagu, U. , Li, X., Ignatova, O., Steer, M., Povey, I., Hurley, P. and Thayne, I. (2014) Demonstration of III-V fins with vertical sidewalls using Cl2/CH4/H2/O2 dry etch chemistry in conjunction with digital etching for recovery of etch damage. In: 45th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, 10 - 13 Dec 2014,

Peralagu, U. , Povey, I. M., Carolan, P., Lin, J., Contreras-Guerrero, R., Droopad, R., Hurley, P. K. and Thayne, I. G. (2014) Electrical and physical characterization of the Al2O3/ p-GaSb interface for 1%, 5%, 10%, and 22% (NH4)2S surface treatments. Applied Physics Letters, 105(16), 162907. (doi:10.1063/1.4899123)

Fu, Y.-C., Peralagu, U. , Lin, J., Povey, I., Li, X., Ignatova, O., Monaghan, S., Droopad, R., Hurley, P. and Thayne, I. (2014) The impact of forming gas annealing on the properties of interfaces between atomic layer deposited Al2O3 and sulphur passivated molecular beam epitaxially grown (110) p- and n-type In0.53Ga0.47As surfaces. In: 18th Workshop on Dielectrics in Microelectronics (WoDIM), Kinsale, Co Cork, Ireland, 9-11 Jun 2014,

2013

Li, X., Ignatova, O., Cao, M., Peralagu, U. , Steer, M., Mirza, M., Zhou, H. and Thayne, I. (2013) 10 nm vertical In0.53Ga0.47As line etching process for III-V MOSFET fabrication by using inductively coupled plasma (ICP) etcher in Cl2/CH4/H2 chemistry. In: 26th International Microprocesses and Nanotechnology Conference (MNC), Royton Sapporo, Hokkaido, Japan, 5-8 Nov 2013,

Chang, S.W. et al. (2013) InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V). In: IEEE International Electronic Devices Meeting (IEDM2013), Washington, D.C., 9-11 Dec 2013, 16.1.1-16.1.4. (doi:10.1109/IEDM.2013.6724639)

Ignatova, O. et al. (2013) Towards vertical sidewalls in III-V FinFETs: dry etch processing and its associated damage on the electrical and physical properties of (100)-oriented InGaAs. In: 44th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 5-7 Dec 2013, pp. 167-168.

Peralagu, U. , Ignatova, O., Li, X., Steer, M., Povey, I.M., Hurley, P.K. and Thayne, I.G. (2013) Optimisation of sidewalls in III-V FinFETs. In: UK Semiconductors 2013, Sheffield, UK, 3 - 4 Jul 2013,

Peralagu, U. , Povey, I.M., Hurley, P.K., Droopad, R. and Thayne, I.G. (2013) An investigation of (NH4)2S passivation on the electrical, and interfacial properties of the Al2O3/GaSb system for p-type and n-type GaSb layers. In: European Materials Research Society (EMRS 2013) Spring Meeting, Strasbourg, France, 27 - 31 May 2013,

2010

Weides, M., Peralagu, U. , Kohlstedt, H., Pfeiffer, J., Kemmler, M., Gurlich, C., Goldobin, E., Koelle, D. and Kleiner, R. (2010) Critical current diffraction pattern of SIFS Josephson junctions with a step-like F-layer. Superconductor Science and Technology, 23(9), 095007. (doi:10.1088/0953-2048/23/9/095007)

Peralagu, U. , Holland, M.C., Paterson, G.W. and Thayne, I.G. (2010) Strain additivity and its impact on the hole mobility of InxGa1-xAs channels for III-V pMOSFETs. In: 19th European Workshop on Heterostructure Technology, Crete, Greece, 18-20 Oct 2010,

Peralagu, U. , Holland, M.C., Paterson, G.W. and Thayne, I.G. (2010) The impact of strain engineering on hole mobility of In(x)Ga(1-x)As channels for III-V pMOSFET. In: TECHCON 2010, Austin, TX, USA, 13 - 14 September 2010,

2008

Peralagu, U. and Weides, M. (2008) Fabrication and characterization of short Josephson junctions with stepped ferromagnetic barrier. Superconductivity News Forum, 3(ST27), pp. 1-6.

This list was generated on Thu Jun 22 04:51:35 2017 BST.
Number of items: 21.

Articles

Fu, Y.-C., Peralagu, U. , Lin, J., Povey, I., Millar, D. A.J., Monaghan, S., Droopad, R., Hurley, P. K. and Thayne, I. G. (2017) The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors. Applied Physics Letters, 110(14), 142905. (doi:10.1063/1.4980012)

Peralagu, U. et al. (2015) (Invited) towards a vertical and damage free post-etch InGaAs fin profile: dry etch processing, sidewall damage assessment and mitigation options. ECS Transactions, 69(5), pp. 15-36. (doi:10.1149/06905.0015ecst)

Peralagu, U. , Povey, I. M., Carolan, P., Lin, J., Contreras-Guerrero, R., Droopad, R., Hurley, P. K. and Thayne, I. G. (2014) Electrical and physical characterization of the Al2O3/ p-GaSb interface for 1%, 5%, 10%, and 22% (NH4)2S surface treatments. Applied Physics Letters, 105(16), 162907. (doi:10.1063/1.4899123)

Weides, M., Peralagu, U. , Kohlstedt, H., Pfeiffer, J., Kemmler, M., Gurlich, C., Goldobin, E., Koelle, D. and Kleiner, R. (2010) Critical current diffraction pattern of SIFS Josephson junctions with a step-like F-layer. Superconductor Science and Technology, 23(9), 095007. (doi:10.1088/0953-2048/23/9/095007)

Peralagu, U. and Weides, M. (2008) Fabrication and characterization of short Josephson junctions with stepped ferromagnetic barrier. Superconductivity News Forum, 3(ST27), pp. 1-6.

Conference Proceedings

Thayne, I., Li, X., Millar, D., Fu, Y.-C. and Peralagu, U. (2017) Plasma Processing of III-V Materials for Energy Efficient Electronics Applications. In: Advanced Etch Technology for Nanopatterning VI, San Jose, CA, USA, 27 Feb - 01 Mar 2017, 101490R. (doi:10.1117/12.2257863)

Millar, D., Peralagu, U. , Li, X., Fu, Y.-C., Gaspar, G., Hurley, P. and Thayne, I. (2017) Improving the electrical properties of the In0.3Ga0.7Sb-Al2O3 interface via in-situ H2 plasma and TMA exposure. In: 20th Conference on Insulating Films on Semiconductors (INFOS 2017), Potsdam, Germany, 27-30 Jun 2017, (Accepted for Publication)

Millar, D., Peralagu, U. , Fu, Y.-C., Li, X., Steer, M. and Thayne, I. (2016) Initial Investigation on the Impact of In Situ Hydrogen Plasma Exposure to the Interface Between Molecular Beam Epitaxially Grown P-Ga0.7In0.3Sb (100) and Thermal Atomic Layer Deposited (ALD) Al2O3. In: 19th Workshop on Dielectrics in Microelectronics (WoDIM), Aci Castello, Catania, Italy, 27-30 Jun 2016,

Li, X., Fu, Y.-C., Millar, D.A.J., Peralagu, U. , Steer, M. and Thayne, I.G. (2016) The Impact of an HBr/Ar Atomic Layer Etch (ALE) Process for InGaAs Vertical Nanowire Diameter Reduction on the Interface Between InGaAs and In-situ ALD Deposited HfO2. In: 47th IEEE Semiconductor Interface Specialists Conference (SISC 2016), San Diego, CA, USA, 8-10 Dec 2016, (Accepted for Publication)

Fu, Y.-C., Peralagu, U. , Li, X., Ignatova, O., Millar, D. A. J., Steer, M., Droopad, R. and Thayne, I. (2015) First Demonstration of Cluster Tool Based ICP Etching of (100) and (110) InGaAs MOSCAPs Followed by In-Situ ALD Deposition of HfO2 Including Nitrogen and Hydrogen Plasma Passivation for Non-Planar III-V MOSFETs. In: 46th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 02-05 Dec 2015,

Fu, Y.-C., Peralagu, U. , Ignatova, O., Li, X., Droopad, R., Thayne, I., Lin, J., Povey, I., Monaghan, S. and Hurley, P. (2015) Energy-Band Structure of Atomic Layer Deposited Al2O3 & Sulphur Passivated Molecular Beam Epitaxially Grown (110) In0.53Ga0.47As Surfaces. In: 11th Conference on PhD Research in Microelectronics and Electronics (IEEE PRIME 2015), Glasgow, UK, 29 June - 2 July 2015,

Fu, Y.-C., Peralagu, U. , Ignatova, O., Li, X., Lin, J., Povey, I., Monaghan, S., Droopad, R., Hurley, P. and Thayne, I. (2015) Energy-band parameter of atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces. In: 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Glasgow, UK, 29 Jun - 02 Jul 2015, pp. 346-348. (doi:10.1109/PRIME.2015.7251406)

Peralagu, U. , Li, X., Ignatova, O., Steer, M., Povey, I., Hurley, P. and Thayne, I. (2014) Demonstration of III-V fins with vertical sidewalls using Cl2/CH4/H2/O2 dry etch chemistry in conjunction with digital etching for recovery of etch damage. In: 45th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, 10 - 13 Dec 2014,

Fu, Y.-C., Peralagu, U. , Lin, J., Povey, I., Li, X., Ignatova, O., Monaghan, S., Droopad, R., Hurley, P. and Thayne, I. (2014) The impact of forming gas annealing on the properties of interfaces between atomic layer deposited Al2O3 and sulphur passivated molecular beam epitaxially grown (110) p- and n-type In0.53Ga0.47As surfaces. In: 18th Workshop on Dielectrics in Microelectronics (WoDIM), Kinsale, Co Cork, Ireland, 9-11 Jun 2014,

Li, X., Ignatova, O., Cao, M., Peralagu, U. , Steer, M., Mirza, M., Zhou, H. and Thayne, I. (2013) 10 nm vertical In0.53Ga0.47As line etching process for III-V MOSFET fabrication by using inductively coupled plasma (ICP) etcher in Cl2/CH4/H2 chemistry. In: 26th International Microprocesses and Nanotechnology Conference (MNC), Royton Sapporo, Hokkaido, Japan, 5-8 Nov 2013,

Chang, S.W. et al. (2013) InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V). In: IEEE International Electronic Devices Meeting (IEDM2013), Washington, D.C., 9-11 Dec 2013, 16.1.1-16.1.4. (doi:10.1109/IEDM.2013.6724639)

Ignatova, O. et al. (2013) Towards vertical sidewalls in III-V FinFETs: dry etch processing and its associated damage on the electrical and physical properties of (100)-oriented InGaAs. In: 44th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 5-7 Dec 2013, pp. 167-168.

Peralagu, U. , Ignatova, O., Li, X., Steer, M., Povey, I.M., Hurley, P.K. and Thayne, I.G. (2013) Optimisation of sidewalls in III-V FinFETs. In: UK Semiconductors 2013, Sheffield, UK, 3 - 4 Jul 2013,

Peralagu, U. , Povey, I.M., Hurley, P.K., Droopad, R. and Thayne, I.G. (2013) An investigation of (NH4)2S passivation on the electrical, and interfacial properties of the Al2O3/GaSb system for p-type and n-type GaSb layers. In: European Materials Research Society (EMRS 2013) Spring Meeting, Strasbourg, France, 27 - 31 May 2013,

Peralagu, U. , Holland, M.C., Paterson, G.W. and Thayne, I.G. (2010) Strain additivity and its impact on the hole mobility of InxGa1-xAs channels for III-V pMOSFETs. In: 19th European Workshop on Heterostructure Technology, Crete, Greece, 18-20 Oct 2010,

Peralagu, U. , Holland, M.C., Paterson, G.W. and Thayne, I.G. (2010) The impact of strain engineering on hole mobility of In(x)Ga(1-x)As channels for III-V pMOSFET. In: TECHCON 2010, Austin, TX, USA, 13 - 14 September 2010,

This list was generated on Thu Jun 22 04:51:35 2017 BST.