Mr Sankar Peralagu

  • Research Associate (Electronic and Nanoscale Engineering)

telephone: 0141 330 5226
email: Sankar.Peralagu@glasgow.ac.uk

Publications

List by: Type | Date

Jump to: 2016 | 2015 | 2014 | 2013 | 2010 | 2008
Number of items: 18.

2016

Millar, D., Peralagu, U., Fu, Y.-C., Li, X., Steer, M., and Thayne, I. (2016) Initial Investigation on the Impact of In Situ Hydrogen Plasma Exposure to the Interface Between Molecular Beam Epitaxially Grown P-Ga0.7In0.3Sb (100) and Thermal Atomic Layer Deposited (ALD) Al2O3. In: 19th Workshop on Dielectrics in Microelectronics (WoDIM), Aci Castello, Catania, Italy, 27-30 Jun 2016,

Li, X., Fu, Y.-C., Millar, D.A.J., Peralagu, U., Steer, M., and Thayne, I.G. (2016) The Impact of an HBr/Ar Atomic Layer Etch (ALE) Process for InGaAs Vertical Nanowire Diameter Reduction on the Interface Between InGaAs and In-situ ALD Deposited HfO2. In: 47th IEEE Semiconductor Interface Specialists Conference (SISC 2016), San Diego, CA, USA, 8-10 Dec 2016, (Accepted for Publication)

2015

Fu, Y.-C., Peralagu, U., Li, X., Ignatova, O., Millar, D. A. J., Steer, M., Droopad, R., and Thayne, I. (2015) First Demonstration of Cluster Tool Based ICP Etching of (100) and (110) InGaAs MOSCAPs Followed by In-Situ ALD Deposition of HfO2 Including Nitrogen and Hydrogen Plasma Passivation for Non-Planar III-V MOSFETs. In: 46th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 02-05 Dec 2015,

Peralagu, U. et al. (2015) (Invited) towards a vertical and damage free post-etch InGaAs fin profile: dry etch processing, sidewall damage assessment and mitigation options. ECS Transactions, 69(5), pp. 15-36. (doi:10.1149/06905.0015ecst)

Fu, Y.-C., Peralagu, U., Ignatova, O., Li, X., Droopad, R., Thayne, I., Lin, J., Povey, I., Monaghan, S., and Hurley, P. (2015) Energy-Band Structure of Atomic Layer Deposited Al2O3 & Sulphur Passivated Molecular Beam Epitaxially Grown (110) In0.53Ga0.47As Surfaces. In: 11th Conference on PhD Research in Microelectronics and Electronics (IEEE PRIME 2015), Glasgow, UK, 29 June - 2 July 2015,

Fu, Y.-C., Peralagu, U., Ignatova, O., Li, X., Lin, J., Povey, I., Monaghan, S., Droopad, R., Hurley, P., and Thayne, I. (2015) Energy-band parameter of atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces. In: 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Glasgow, UK, 29 Jun - 02 Jul 2015, pp. 346-348. (doi:10.1109/PRIME.2015.7251406)

2014

Peralagu, U., Li, X., Ignatova, O., Steer, M., Povey, I., Hurley, P., and Thayne, I. (2014) Demonstration of III-V fins with vertical sidewalls using Cl2/CH4/H2/O2 dry etch chemistry in conjunction with digital etching for recovery of etch damage. In: 45th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, 10 - 13 Dec 2014,

Peralagu, U., Povey, I. M., Carolan, P., Lin, J., Contreras-Guerrero, R., Droopad, R., Hurley, P. K., and Thayne, I. G. (2014) Electrical and physical characterization of the Al2O3/ p-GaSb interface for 1%, 5%, 10%, and 22% (NH4)2S surface treatments. Applied Physics Letters, 105(16), 162907. (doi:10.1063/1.4899123)

Fu, Y.-C., Peralagu, U., Lin, J., Povey, I., Li, X., Ignatova, O., Monaghan, S., Droopad, R., Hurley, P., and Thayne, I. (2014) The impact of forming gas annealing on the properties of interfaces between atomic layer deposited Al2O3 and sulphur passivated molecular beam epitaxially grown (110) p- and n-type In0.53Ga0.47As surfaces. In: 18th Workshop on Dielectrics in Microelectronics (WoDIM), Kinsale, Co Cork, Ireland, 9-11 Jun 2014,

2013

Li, X., Ignatova, O., Cao, M., Peralagu, U., Steer, M., Mirza, M., Zhou, H., and Thayne, I. (2013) 10 nm vertical In0.53Ga0.47As line etching process for III-V MOSFET fabrication by using inductively coupled plasma (ICP) etcher in Cl2/CH4/H2 chemistry. In: 26th International Microprocesses and Nanotechnology Conference (MNC), Royton Sapporo, Hokkaido, Japan, 5-8 Nov 2013,

Chang, S.W. et al. (2013) InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V). In: IEEE International Electronic Devices Meeting (IEDM2013), Washington, D.C., 9-11 Dec 2013, 16.1.1-16.1.4. (doi:10.1109/IEDM.2013.6724639)

Ignatova, O. et al. (2013) Towards vertical sidewalls in III-V FinFETs: dry etch processing and its associated damage on the electrical and physical properties of (100)-oriented InGaAs. In: 44th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 5-7 Dec 2013, pp. 167-168.

Peralagu, U., Ignatova, O., Li, X., Steer, M., Povey, I.M., Hurley, P.K., and Thayne, I.G. (2013) Optimisation of sidewalls in III-V FinFETs. In: UK Semiconductors 2013, Sheffield, UK, 3 - 4 Jul 2013,

Peralagu, U., Povey, I.M., Hurley, P.K., Droopad, R., and Thayne, I.G. (2013) An investigation of (NH4)2S passivation on the electrical, and interfacial properties of the Al2O3/GaSb system for p-type and n-type GaSb layers. In: European Materials Research Society (EMRS 2013) Spring Meeting, Strasbourg, France, 27 - 31 May 2013,

2010

Weides, M., Peralagu, U., Kohlstedt, H., Pfeiffer, J., Kemmler, M., Gurlich, C., Goldobin, E., Koelle, D., and Kleiner, R. (2010) Critical current diffraction pattern of SIFS Josephson junctions with a step-like F-layer. Superconductor Science and Technology, 23(9), 095007. (doi:10.1088/0953-2048/23/9/095007)

Peralagu, U., Holland, M.C., Paterson, G.W., and Thayne, I.G. (2010) Strain additivity and its impact on the hole mobility of InxGa1-xAs channels for III-V pMOSFETs. In: 19th European Workshop on Heterostructure Technology, Crete, Greece, 18-20 Oct 2010,

Peralagu, U., Holland, M.C., Paterson, G.W., and Thayne, I.G. (2010) The impact of strain engineering on hole mobility of In(x)Ga(1-x)As channels for III-V pMOSFET. In: TECHCON 2010, Austin, TX, USA, 13 - 14 September 2010,

2008

Peralagu, U., and Weides, M. (2008) Fabrication and characterization of short Josephson junctions with stepped ferromagnetic barrier. Superconductivity News Forum, 3(ST27), pp. 1-6.

This list was generated on Wed Mar 29 20:06:40 2017 BST.
Number of items: 18.

Articles

Peralagu, U. et al. (2015) (Invited) towards a vertical and damage free post-etch InGaAs fin profile: dry etch processing, sidewall damage assessment and mitigation options. ECS Transactions, 69(5), pp. 15-36. (doi:10.1149/06905.0015ecst)

Peralagu, U., Povey, I. M., Carolan, P., Lin, J., Contreras-Guerrero, R., Droopad, R., Hurley, P. K., and Thayne, I. G. (2014) Electrical and physical characterization of the Al2O3/ p-GaSb interface for 1%, 5%, 10%, and 22% (NH4)2S surface treatments. Applied Physics Letters, 105(16), 162907. (doi:10.1063/1.4899123)

Weides, M., Peralagu, U., Kohlstedt, H., Pfeiffer, J., Kemmler, M., Gurlich, C., Goldobin, E., Koelle, D., and Kleiner, R. (2010) Critical current diffraction pattern of SIFS Josephson junctions with a step-like F-layer. Superconductor Science and Technology, 23(9), 095007. (doi:10.1088/0953-2048/23/9/095007)

Peralagu, U., and Weides, M. (2008) Fabrication and characterization of short Josephson junctions with stepped ferromagnetic barrier. Superconductivity News Forum, 3(ST27), pp. 1-6.

Conference Proceedings

Millar, D., Peralagu, U., Fu, Y.-C., Li, X., Steer, M., and Thayne, I. (2016) Initial Investigation on the Impact of In Situ Hydrogen Plasma Exposure to the Interface Between Molecular Beam Epitaxially Grown P-Ga0.7In0.3Sb (100) and Thermal Atomic Layer Deposited (ALD) Al2O3. In: 19th Workshop on Dielectrics in Microelectronics (WoDIM), Aci Castello, Catania, Italy, 27-30 Jun 2016,

Li, X., Fu, Y.-C., Millar, D.A.J., Peralagu, U., Steer, M., and Thayne, I.G. (2016) The Impact of an HBr/Ar Atomic Layer Etch (ALE) Process for InGaAs Vertical Nanowire Diameter Reduction on the Interface Between InGaAs and In-situ ALD Deposited HfO2. In: 47th IEEE Semiconductor Interface Specialists Conference (SISC 2016), San Diego, CA, USA, 8-10 Dec 2016, (Accepted for Publication)

Fu, Y.-C., Peralagu, U., Li, X., Ignatova, O., Millar, D. A. J., Steer, M., Droopad, R., and Thayne, I. (2015) First Demonstration of Cluster Tool Based ICP Etching of (100) and (110) InGaAs MOSCAPs Followed by In-Situ ALD Deposition of HfO2 Including Nitrogen and Hydrogen Plasma Passivation for Non-Planar III-V MOSFETs. In: 46th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 02-05 Dec 2015,

Fu, Y.-C., Peralagu, U., Ignatova, O., Li, X., Droopad, R., Thayne, I., Lin, J., Povey, I., Monaghan, S., and Hurley, P. (2015) Energy-Band Structure of Atomic Layer Deposited Al2O3 & Sulphur Passivated Molecular Beam Epitaxially Grown (110) In0.53Ga0.47As Surfaces. In: 11th Conference on PhD Research in Microelectronics and Electronics (IEEE PRIME 2015), Glasgow, UK, 29 June - 2 July 2015,

Fu, Y.-C., Peralagu, U., Ignatova, O., Li, X., Lin, J., Povey, I., Monaghan, S., Droopad, R., Hurley, P., and Thayne, I. (2015) Energy-band parameter of atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces. In: 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Glasgow, UK, 29 Jun - 02 Jul 2015, pp. 346-348. (doi:10.1109/PRIME.2015.7251406)

Peralagu, U., Li, X., Ignatova, O., Steer, M., Povey, I., Hurley, P., and Thayne, I. (2014) Demonstration of III-V fins with vertical sidewalls using Cl2/CH4/H2/O2 dry etch chemistry in conjunction with digital etching for recovery of etch damage. In: 45th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, 10 - 13 Dec 2014,

Fu, Y.-C., Peralagu, U., Lin, J., Povey, I., Li, X., Ignatova, O., Monaghan, S., Droopad, R., Hurley, P., and Thayne, I. (2014) The impact of forming gas annealing on the properties of interfaces between atomic layer deposited Al2O3 and sulphur passivated molecular beam epitaxially grown (110) p- and n-type In0.53Ga0.47As surfaces. In: 18th Workshop on Dielectrics in Microelectronics (WoDIM), Kinsale, Co Cork, Ireland, 9-11 Jun 2014,

Li, X., Ignatova, O., Cao, M., Peralagu, U., Steer, M., Mirza, M., Zhou, H., and Thayne, I. (2013) 10 nm vertical In0.53Ga0.47As line etching process for III-V MOSFET fabrication by using inductively coupled plasma (ICP) etcher in Cl2/CH4/H2 chemistry. In: 26th International Microprocesses and Nanotechnology Conference (MNC), Royton Sapporo, Hokkaido, Japan, 5-8 Nov 2013,

Chang, S.W. et al. (2013) InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V). In: IEEE International Electronic Devices Meeting (IEDM2013), Washington, D.C., 9-11 Dec 2013, 16.1.1-16.1.4. (doi:10.1109/IEDM.2013.6724639)

Ignatova, O. et al. (2013) Towards vertical sidewalls in III-V FinFETs: dry etch processing and its associated damage on the electrical and physical properties of (100)-oriented InGaAs. In: 44th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 5-7 Dec 2013, pp. 167-168.

Peralagu, U., Ignatova, O., Li, X., Steer, M., Povey, I.M., Hurley, P.K., and Thayne, I.G. (2013) Optimisation of sidewalls in III-V FinFETs. In: UK Semiconductors 2013, Sheffield, UK, 3 - 4 Jul 2013,

Peralagu, U., Povey, I.M., Hurley, P.K., Droopad, R., and Thayne, I.G. (2013) An investigation of (NH4)2S passivation on the electrical, and interfacial properties of the Al2O3/GaSb system for p-type and n-type GaSb layers. In: European Materials Research Society (EMRS 2013) Spring Meeting, Strasbourg, France, 27 - 31 May 2013,

Peralagu, U., Holland, M.C., Paterson, G.W., and Thayne, I.G. (2010) Strain additivity and its impact on the hole mobility of InxGa1-xAs channels for III-V pMOSFETs. In: 19th European Workshop on Heterostructure Technology, Crete, Greece, 18-20 Oct 2010,

Peralagu, U., Holland, M.C., Paterson, G.W., and Thayne, I.G. (2010) The impact of strain engineering on hole mobility of In(x)Ga(1-x)As channels for III-V pMOSFET. In: TECHCON 2010, Austin, TX, USA, 13 - 14 September 2010,

This list was generated on Wed Mar 29 20:06:40 2017 BST.