Miss Olesya Ignatova

  • Research Associate (Electronic and Nanoscale Engineering)

telephone: ext. 0179
email: Olesya.Ignatova@glasgow.ac.uk

Publications

List by: Type | Date

Jump to: 2016 | 2015 | 2014 | 2013 | 2009
Number of items: 14.

2016

Taylor, R.J.E., Li, G., Ivanov, P., Childs, D.T.D., Stevens, B.J., Harrison, B., Babazadeh, N., Ignatova, O. and Hogg, R.A. (2016) Mode Control in Photonic Crystal Surface Emitting Lasers Through In-Plane Feedback. In: 2016 International Semiconductor Laser Conference (ISLC), Kobe, Japan, 12-15 Sep 2016, ISBN 9784885523069

Cho, S.-J., Li, X., Floros, K., Hamakumara, D., Ignatova, O., Moran, D., Humphreys, C.J. and Thayne, I. (2016) Low off-state Leakage Currents in AlGaN/GaN High Electron Mobility Transistors By Employing A Highly Stressed SiNx Surface Passivation Layer. 19th Workshop on Dielectrics in Microelectronics (WoDIM), Aci Castello, Catania, Italy, 27-30 Jun 2016.

Floros, K. et al. (2016) Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

Taylor, R.J.E., Li, G., Ivanov, P., Childs, D.D., Stevens, B.J., Babazadeh, N., Ignatova, O., Nakano, Y., Tanemura, T. and Hogg, R.A. (2016) Photonic Crystal Surface Emitting Lasers — Coherent Arrays and External Feedback. In: 2016 International Conference Laser Optics, St. Petersburg, Russia, 27 Jun - 01 Jul 2016, R3. ISBN 9781467397384 (doi:10.1109/LO.2016.7549733)

2015

Fu, Y.-C., Peralagu, U. , Li, X., Ignatova, O., Millar, D. A. J., Steer, M., Droopad, R. and Thayne, I. (2015) First Demonstration of Cluster Tool Based ICP Etching of (100) and (110) InGaAs MOSCAPs Followed by In-Situ ALD Deposition of HfO2 Including Nitrogen and Hydrogen Plasma Passivation for Non-Planar III-V MOSFETs. In: 46th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 02-05 Dec 2015,

Peralagu, U. et al. (2015) (Invited) towards a vertical and damage free post-etch InGaAs fin profile: dry etch processing, sidewall damage assessment and mitigation options. ECS Transactions, 69(5), pp. 15-36. (doi:10.1149/06905.0015ecst)

Fu, Y.-C., Peralagu, U. , Ignatova, O., Li, X., Droopad, R., Thayne, I., Lin, J., Povey, I., Monaghan, S. and Hurley, P. (2015) Energy-Band Structure of Atomic Layer Deposited Al2O3 & Sulphur Passivated Molecular Beam Epitaxially Grown (110) In0.53Ga0.47As Surfaces. In: 11th Conference on PhD Research in Microelectronics and Electronics (IEEE PRIME 2015), Glasgow, UK, 29 June - 2 July 2015,

Fu, Y.-C., Peralagu, U. , Ignatova, O., Li, X., Lin, J., Povey, I., Monaghan, S., Droopad, R., Hurley, P. and Thayne, I. (2015) Energy-band parameter of atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces. In: 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Glasgow, UK, 29 Jun - 02 Jul 2015, pp. 346-348. (doi:10.1109/PRIME.2015.7251406)

2014

Peralagu, U. , Li, X., Ignatova, O., Steer, M., Povey, I., Hurley, P. and Thayne, I. (2014) Demonstration of III-V fins with vertical sidewalls using Cl2/CH4/H2/O2 dry etch chemistry in conjunction with digital etching for recovery of etch damage. In: 45th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, 10 - 13 Dec 2014,

Fu, Y.-C., Peralagu, U. , Lin, J., Povey, I., Li, X., Ignatova, O., Monaghan, S., Droopad, R., Hurley, P. and Thayne, I. (2014) The impact of forming gas annealing on the properties of interfaces between atomic layer deposited Al2O3 and sulphur passivated molecular beam epitaxially grown (110) p- and n-type In0.53Ga0.47As surfaces. In: 18th Workshop on Dielectrics in Microelectronics (WoDIM), Kinsale, Co Cork, Ireland, 9-11 Jun 2014,

2013

Li, X., Ignatova, O., Cao, M., Peralagu, U. , Steer, M., Mirza, M., Zhou, H. and Thayne, I. (2013) 10 nm vertical In0.53Ga0.47As line etching process for III-V MOSFET fabrication by using inductively coupled plasma (ICP) etcher in Cl2/CH4/H2 chemistry. In: 26th International Microprocesses and Nanotechnology Conference (MNC), Royton Sapporo, Hokkaido, Japan, 5-8 Nov 2013,

Ignatova, O. et al. (2013) Towards vertical sidewalls in III-V FinFETs: dry etch processing and its associated damage on the electrical and physical properties of (100)-oriented InGaAs. In: 44th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 5-7 Dec 2013, pp. 167-168.

Peralagu, U. , Ignatova, O., Li, X., Steer, M., Povey, I.M., Hurley, P.K. and Thayne, I.G. (2013) Optimisation of sidewalls in III-V FinFETs. In: UK Semiconductors 2013, Sheffield, UK, 3 - 4 Jul 2013,

2009

Thayne, I., Li, X., Jansen, W., Ignatova, O., Bentley, S., Zhou, H., Macintyre, D., Thoms, S. and Hill, R. (2009) Development of III-V MOSFET process modules compatible with silicon ULSI manufacture. ECS Transactions, 25(7), pp. 385-395. (doi:10.1149/1.3203975)

This list was generated on Tue Jun 27 16:47:35 2017 BST.
Number of items: 14.

Articles

Peralagu, U. et al. (2015) (Invited) towards a vertical and damage free post-etch InGaAs fin profile: dry etch processing, sidewall damage assessment and mitigation options. ECS Transactions, 69(5), pp. 15-36. (doi:10.1149/06905.0015ecst)

Thayne, I., Li, X., Jansen, W., Ignatova, O., Bentley, S., Zhou, H., Macintyre, D., Thoms, S. and Hill, R. (2009) Development of III-V MOSFET process modules compatible with silicon ULSI manufacture. ECS Transactions, 25(7), pp. 385-395. (doi:10.1149/1.3203975)

Conference or Workshop Item

Cho, S.-J., Li, X., Floros, K., Hamakumara, D., Ignatova, O., Moran, D., Humphreys, C.J. and Thayne, I. (2016) Low off-state Leakage Currents in AlGaN/GaN High Electron Mobility Transistors By Employing A Highly Stressed SiNx Surface Passivation Layer. 19th Workshop on Dielectrics in Microelectronics (WoDIM), Aci Castello, Catania, Italy, 27-30 Jun 2016.

Conference Proceedings

Taylor, R.J.E., Li, G., Ivanov, P., Childs, D.T.D., Stevens, B.J., Harrison, B., Babazadeh, N., Ignatova, O. and Hogg, R.A. (2016) Mode Control in Photonic Crystal Surface Emitting Lasers Through In-Plane Feedback. In: 2016 International Semiconductor Laser Conference (ISLC), Kobe, Japan, 12-15 Sep 2016, ISBN 9784885523069

Floros, K. et al. (2016) Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness. In: UKNC Winter Conference 2016, Cambridge, UK, 6-7 Jan 2016,

Taylor, R.J.E., Li, G., Ivanov, P., Childs, D.D., Stevens, B.J., Babazadeh, N., Ignatova, O., Nakano, Y., Tanemura, T. and Hogg, R.A. (2016) Photonic Crystal Surface Emitting Lasers — Coherent Arrays and External Feedback. In: 2016 International Conference Laser Optics, St. Petersburg, Russia, 27 Jun - 01 Jul 2016, R3. ISBN 9781467397384 (doi:10.1109/LO.2016.7549733)

Fu, Y.-C., Peralagu, U. , Li, X., Ignatova, O., Millar, D. A. J., Steer, M., Droopad, R. and Thayne, I. (2015) First Demonstration of Cluster Tool Based ICP Etching of (100) and (110) InGaAs MOSCAPs Followed by In-Situ ALD Deposition of HfO2 Including Nitrogen and Hydrogen Plasma Passivation for Non-Planar III-V MOSFETs. In: 46th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 02-05 Dec 2015,

Fu, Y.-C., Peralagu, U. , Ignatova, O., Li, X., Droopad, R., Thayne, I., Lin, J., Povey, I., Monaghan, S. and Hurley, P. (2015) Energy-Band Structure of Atomic Layer Deposited Al2O3 & Sulphur Passivated Molecular Beam Epitaxially Grown (110) In0.53Ga0.47As Surfaces. In: 11th Conference on PhD Research in Microelectronics and Electronics (IEEE PRIME 2015), Glasgow, UK, 29 June - 2 July 2015,

Fu, Y.-C., Peralagu, U. , Ignatova, O., Li, X., Lin, J., Povey, I., Monaghan, S., Droopad, R., Hurley, P. and Thayne, I. (2015) Energy-band parameter of atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces. In: 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Glasgow, UK, 29 Jun - 02 Jul 2015, pp. 346-348. (doi:10.1109/PRIME.2015.7251406)

Peralagu, U. , Li, X., Ignatova, O., Steer, M., Povey, I., Hurley, P. and Thayne, I. (2014) Demonstration of III-V fins with vertical sidewalls using Cl2/CH4/H2/O2 dry etch chemistry in conjunction with digital etching for recovery of etch damage. In: 45th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, 10 - 13 Dec 2014,

Fu, Y.-C., Peralagu, U. , Lin, J., Povey, I., Li, X., Ignatova, O., Monaghan, S., Droopad, R., Hurley, P. and Thayne, I. (2014) The impact of forming gas annealing on the properties of interfaces between atomic layer deposited Al2O3 and sulphur passivated molecular beam epitaxially grown (110) p- and n-type In0.53Ga0.47As surfaces. In: 18th Workshop on Dielectrics in Microelectronics (WoDIM), Kinsale, Co Cork, Ireland, 9-11 Jun 2014,

Li, X., Ignatova, O., Cao, M., Peralagu, U. , Steer, M., Mirza, M., Zhou, H. and Thayne, I. (2013) 10 nm vertical In0.53Ga0.47As line etching process for III-V MOSFET fabrication by using inductively coupled plasma (ICP) etcher in Cl2/CH4/H2 chemistry. In: 26th International Microprocesses and Nanotechnology Conference (MNC), Royton Sapporo, Hokkaido, Japan, 5-8 Nov 2013,

Ignatova, O. et al. (2013) Towards vertical sidewalls in III-V FinFETs: dry etch processing and its associated damage on the electrical and physical properties of (100)-oriented InGaAs. In: 44th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 5-7 Dec 2013, pp. 167-168.

Peralagu, U. , Ignatova, O., Li, X., Steer, M., Povey, I.M., Hurley, P.K. and Thayne, I.G. (2013) Optimisation of sidewalls in III-V FinFETs. In: UK Semiconductors 2013, Sheffield, UK, 3 - 4 Jul 2013,

This list was generated on Tue Jun 27 16:47:35 2017 BST.