2011

Donadio, O., Elgaid, K. , and Appleby, R. (2011) Waveguide-to-microstrip transition at G-band using elevated E-plane probe. Electronics Letters, 47 (2). pp. 115-116. ISSN 0013-5194 (doi:10.1049/el.2010.2926)

2010

McGregor, I., Aghamoradi, F. , and Elgaid, K. (2010) An approximate analytical model for the quasi-static parameters of elevated CPW lines. IEEE Transactions on Microwave Theory and Techniques, 58 (12). pp. 3809-3814. ISSN 0018-9480 (doi:10.1109/TMTT.2010.2086552)

Hwang, C.J., Lok, L.B. , Thayne, I.G. , and Elgaid, K. (2010) W-band microstrip band-pass filter using branch-line coupler with open stubs. Microwave and Optical Technology Letters, 52 (6). pp. 1436-1439. ISSN 0895-2477 (doi:10.1002/mop.25185)

Ahmed, N., Aref, I., Rodriguez-Salazar, F. , and Elgaid, K. (2010) Network performance evaluation based on SoC design methodology. In: IEEE, IET International Symposium on Communication Systems, Networks and Digital Signal Processing CSNDSP 2010, 21-23 Jul 2010, Newcastle, UK.

Aref, I., Ahmed, N., Rodriguez-Salazar, F. , and Elgaid, K. (2010) Measuring and optimising convergence and stability in terms of system construction in SystemC. In: 17th IEEE International Conference and Workshops on Engineering of Computer Based Systems (ECBS), 2010 , 22-26 Mar 2010, Oxford, UK.

Aref, I., Ahmed, N., Rodriguez-Salazar, F. , and Elgaid, K. (2010) Modeling of flocking behaviour system in SystemC. In: Sixth Advanced International Conference on Telecommunications (AICT), 2010 , 9-15 May 2010, Barcelona, Spain.

Aref, I., Ahmed, N., Rodriguez-Salazar, F. , and Elgaid, K. (2010) Wireless extension into existing SystemC design methodology. In: 2nd International Conference on Computer Engineering and Technology (ICCET), 2010 , 16-19 Apr 2010, Chengdu , China.

Emhemmed, A.S., McGregor, I. , and Elgaid, K. (2010) Elevated conductor coplanar waveguide-fed three-level proximity-coupled antenna for G-band applications. IET Microwaves, Antennas and Propagation, 4 (11). pp. 1910-1915. ISSN 1751-8725 (doi:10.1049/iet-map.2009.0616)

Hwang, C-J., Lok, L.B. , Chong, H.M.H. , Holland, M. , Thayne, I.G. , and Elgaid, K. (2010) An ultra-low-power MMIC amplifier using 50nm delta In_0.52Al_0.48As/In_0.53Ga_0.47As metamorphic HEMT. IEEE Electron Device Letters, 31 (11). pp. 1230-1232. ISSN 0741-3106 (doi:10.1109/LED.2010.2070484)

McGregor, I., and Elgaid, K. (2010) Low-power GaAs comparator and monostable. Electronics Letters, 46 (17). 1214-1U70. ISSN 0013-5194 (doi:10.1049/el.2010.1357)

2009

Hwang, C.J., Lok, L.B. , Thayne, I.G. , and Elgaid, K. (2009) Parallel coupled-line bandpass filter with branch-line shape for G-band frequency. Electronics Letters, 45 (16). pp. 838-840. ISSN 0013-5194 (doi:10.1049/el.2009.0716)

Aghamoradi, F., McGregor, I. , and Elgaid, K. (2009) Performance enhancement of millimetre-wave resonators using elevated CPW. Electronics Letters, 45 (25). pp. 1326-1328. ISSN 0013-5194 (doi:10.1049/el.2009.2348)

Ahmed, N.A., Aref, I.A., Rodriguez-Salazar, F. , and Elgaid, K. (2009) Wireless channel model based on SoC design methodology. In: Fourth International Conference on Systems and Networks Communications ICSNC'09, 20-25 Sep 2009, Porto, Portugal.

Emhemmed, A., and Elgaid, K. (2009) G-band bowtie dipole antenna. In: European Conference on Antennas and Propagation EuCAP 2009 Proceedings: Estrel Convention Center, Berlin, Germany, March 23-27, 2009. VDE Verlag, Berlin, Germany, pp. 949-951. ISBN 9781424447534

Emhemmed, A.S., and Elgaid, K. (2009) Broadband Micromachined Microstrip Patch Antenna for G-band Applications. In: European Microwave Conference, 2009, Manchester, UK.

Emhemmed, A.S., Elgaid, K. , and Lok, L.B. (2009) Integrated Micromachined Millimeter Wave Patch Antenna. In: Antenna Technology, 2009. iWAT 2009. IEEE International Workshop on , 2-4 March, 2009, Santa Monica, CA..

Emhemmed, A.S., McGregor, I. , and Elgaid, K. (2009) 200GHz Broadband Proximity Coupled Patch Antenna. In: 2009 IEEE International Conference on Ultra-Wideband, 9-11 September 2009, Vancouver, Canada.

Hwang, C.J., Chong, H.M.H., Holland, M. , Thayne, I.G. , and Elgaid, K. (2009) DC-35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications. Electronics Letters, 45 (12). pp. 632-633. ISSN 0013-5194 (doi:10.1049/el.2009.0684)

Hwang, C.J., Lok, L.B. , Thayne, I.G. , and Elgaid, K. (2009) A wide bandpass filter with defected ground structure for wide out-of-band suppression. In: APMC: 2009 Asia Pacific Microwave Conference, 7-10 December 2009, Singapore. IEEE, Piscataway, N.J., USA, pp. 2018-2021. ISBN 9781424428014

Hwang, C.J., McGregor, I. , Oxland, R. , Whyte, G., Thayne, I.G. , and Elgaid, K. (2009) An ultra-low power OOK RF transceiver for wireless sensor networks. In: EuMC 09: European Microwave Conference, Rome, Italy, 29 Sept - 1 Oct 2009. IEEE Computer Society, Burlingame, USA, pp. 1323-1326. ISBN 9781424447480

Lok, L.B., Hwang, C.J., Chong, H.M.H. , Thayne, I.G. , and Elgaid, K. (2009) A W-band MMIC vector modulator utilizing tandem couplers and 50nm MHEMTs. In: European Microwave Conference, 29 Sept - 1 Oct 2009, Rome, Italy.

Lok, L.B., Singh, S., Wilson, A., and Elgaid, K. (2009) Impact of waveguide aperture dimensions and misalignment on the calibrated performance of a network analyzer from 140 to 325GHz. In: 73rd ARFTG Microwave Measurement Conference Spring 2009 Practical Applications of Nonlinear Measurements: 12 June 2009, Boston, MA. IEEE Computer Society, Piscataway, N.J., USA, pp. 32-35. ISBN 9781424434428

McGregor, I., Lok, L.B. , Hwang, C.J., Oxland, R. , Whyte, G. , Thayne, I.G. , and Elgaid, K. (2009) Low complexity, low power, 10 GHz super-regenerative transceiver. In: APMC: 2009 Asia Pacific Microwave Conference, 7-10 December 2009, Singapore.

McGregor, I., Whyte, G., and Elgaid, K. (2009) Low complexity, 165 mu W, 5 Mbit/s wideband radio front-end with range of several meters. In: IEEE MTT-S International Microwave Symposium Digest: 7-12 June 2009, Boston, MA, USA. IEEE Computer Society, Piscataway, N.J., USA, pp. 397-400. ISBN 9781424428038

2008

Aref, I.A., Ahmed, N.A., Rodriguez-Salazar, F. , and Elgaid, K. (2008) RTL-level modeling of an 8B/10B encoder-decoder using SystemC. In: 2008 5th IFIP International Conference on Wireless and Optical Communications Networks (WOCN '08). IEEE Computer Society. ISBN 9781424419791

Lok, L., Hwang, C.J., Chong, H.M.H. , Elgaid, K. , and Thayne, I.G. (2008) Measurement and modeling of CPW transmission lines and power dividers on electrically thick GaAs substrate to 220GHz. In: 33rd International Conference on Infrared, Millimeter and Terahertz Waves: 15-19 September 2008, Pasadena, CA, USA. IEEE Computer Society, Piscataway, N.J., USA, pp. 734-735. ISBN 9781424421190

2007

Thayne, I, Elgaid, K , Moran, D , Cao, X, Boyd, E, McLelland, H, Holland, M, Thoms, S , and Stanley, C (2007) 50 nm metamorphic GaAs and InPHEMTs. Thin Solid Films, 515 . pp. 4373-4377. (doi:10.1016/j.tsf.2006.07.104)

2006

Moran, D.A.J., McLelland, H., Elgaid, K. , Whyte, G., Stanley, C.R. , and Thayne, I. (2006) 50-nm self-aligned and 'standard' T-gate InP pHEMT comparison: the influence of parasitics on performance at the 50-nm node. IEEE Transactions on Electron Devices, 53 (12). pp. 2920-2925. ISSN 0018-9383 (doi:10.1109/TED.2006.885674)

Elgaid, K, Holland, MC , McLelland, H , Moran, DAJ , Thoms, S , Stanley, CR , and Thayne, IG (2006) 50nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications. In: Indium Phosphide & Related Materials, Princeton, USA.

Elgaid, K, Thayne, IG , Whyte, G , Martens, J, and Culver, D (2006) Parasitic moding influences on coplanar waveguide passive components at G-band frequency. In: European Microwave Conference, Manchester, UK.

McGregor, I, Whyte, G , Elgaid, K , Wasige, E , and Thayne, IG (2006) A 400 micro W Tx/380 microW Rx 2.4GHz super-regenerative GaAs transceiver. In: European Microwave Conference, Manchester, UK.

Moran, DAJ, McLelland, H , Elgaid, K , Stanley, CR , and Thayne, IG (2006) Scaling of self-aligned T-gate InGaAs/InAlAs HEMT technology. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.

Moran, DAJ, McLelland, H, Elgaid, K , Whyte, G, Stanley, CR , and Thayne, I (2006) 50-nm self-aligned and "standard" T-gate InP pHEMT comparison: The influence of parasitics on performance at the 50-nm node. IEEE Transactions on Electron Devices, 53 . pp. 2920-2925. (doi:10.1109/TED.2006.885674)

Thayne, IG et al. (2006) III-V MOSFETs for Digital Applications: an overview. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.

Thayne, I., Elgaid, K. , Holland, M., McLelland, H., Moran, D.A.J. , Thoms, S. , and Stanley, C. (2006) 50 nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications. In: 2006 International Conference on Indium Phosphide and Related Materials, 7-11 May 2006, Princeton, New Jersey, USA.

Zhou, HP, Elgaid, K , Wilkinson, C, and Thayne, I (2006) Low-hydrogen-content silicon nitride deposited at room temperature by inductively coupled plasma deposition. Japanese Journal of Applied Physics Part 1-regular Papers Brief Communications and Review Papers, 45 . pp. 8388-8392. (doi:10.1143/JJAP.45.8388)

2005

Elgaid, K., McLelland, H., Holland, M., Moran, D.A.J. , Stanley, C.R. , and Thayne, I.G. (2005) 50-nm T-gate metamorphic GaAs HEMTs with f_T of 440 GHz and noise figure of 0.7 dB at 26 GHz. IEEE Electron Device Letters, 26 (11). pp. 784-786. ISSN 0741-3106 (doi:10.1109/LED.2005.857716)

Elgaid, K, McLelland, H, Holland, M, Moran, DAJ , Stanley, CR , and Thayne, IG (2005) 50-nm T-gate metamorphic GaAs HEMTs with f(T) of 440 GHz and noise figure of 0.7 dB at 26 GHz. IEEE Electron Device Letters, 26 . pp. 784-786. (doi:10.1109/LED.2005.857716)

Elgaid, K, McLelland, H , Stanley, CR , and Thayne, IG (2005) Low noise W-band MMMIC amplifier using 50nm InP technology for millimeterwave receivers applications. In: 2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALSConference proceedings - indium phosphide and related materials, NEW YORK.

Elgaid, K, Moran, DAJ , McLelland, H , Holland, MC , and Thayne, IG (2005) Low noise high performance 50nm T-GATE metamorphic HEMT with cut-off frequency FTOF 440Ghz for millimeterwave imaging receivers applications. In: 2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALSConference proceedings - indium phosphide and related materials, NEW YORK.

Elgaid, K, Zhou, H , Wilkinson, CDW , and Thayne, IG (2005) Room temperature deposited Si3N4 characterization and applications in MMICs. In: 8th International symposium on Silicon Nitride and Silicon dioxide thin insulating films and emerging dielectrics, Quebec, Canada.

Elgaid, K., McLelland, H., Stanley, C.R. , and Thayne, I.G. (2005) Low noise W-band MMMIC amplifier using 50 nm InP technology for millimeterwave receivers applications. In: International Conference on Indium Phosphide and Related Materials, 8-12 May 2005, Piscataway.

Elgaid, K., Moran, D. , McLelland, H., Holland, M., and Thayne, I.G. (2005) Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency f_T of 440 GHz for millimeterwave imaging receivers applications. In: IEEE International Conference on Indium Phosphide and Related Materials, 2005, 8-12 May 2005, Glasgow, Scotland.

Hettak, K, Stubbs, MG, Elgaid, K , and Thayne, IG (2005) Design and characterisation of elevated coplanar waveguide and thin film microstrip structures for mm-wave applications. In: European Microwave Conference, Paris, France.

Hettak, K, Stubbs, MG, Elgaid, K , and Thayne, IG (2005) A compact high performance semi-lumped low pass filter fabricated with a standard airbridge process. In: European Microwave Conference, Paris, France.

Kalna, K, Elgaid, K , Thayne, IG , and Asenov, A (2005) Modelling of InPHEMTs with high indium content channels. In: 2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALSConference proceedings - indium phosphide and related materials, NEW YORK.

Li, X, Elgaid, K , McLelland, H, and Thayne, IG (2005) Surface mass spctrometric analysis of SiCl4/SiF4/O-2 dry etch gate recessed 120 nm T-gate GaAs pHEMTs. Microelectronic Engineering, 78-79 . pp. 233-238. (doi:10.1016/j.mee.2004.12.032)

Moran, DAJ, Cao, X, Elgaid, K , Boyd, E, Chen, Y, Thoms, S , McLelland, H , Stanley, CR , Holland, MC , and Thayne, IG (2005) Sub 100nm III-V HEMT technology: Approaching the Terahertz Regime. In: International Workshop on Terahertz Technology, Osaka, Japan.

Thayne, IG, Elgaid, K , Moran, DAJ , Cao, X, Boyd, E, McLelland, H , Holland, MC , Thoms, S , and Stanley, CR (2005) 50nm Metamorphic GaAs and InP HEMTs. In: 3rd International Conference for Advanced Materials and Technologies, Singapore.

2004

Cao, X., Thoms, S. , Macintyre, D. , McLelland, H., Boyd, E., Elgaid, K. , Hill, R., Stanley, C.R. , and Thayne, I.G. (2004) Fabrication and performance of 50 nm T-gates for InP high electron mobility transistors. Microelectronic Engineering, 73-74 . pp. 818-821. ISSN 0167-9317 (doi:10.1016/j.mee.2004.03.058)

Boyd, E, Thoms, S , Moran, DAJ , Elgaid, K , Cao, X, Holland, M, Stanley, CR , and Thayne, IG (2004) Fabrication of very high performance 50nm T-gate metamorphic GaAs HEMT's with exceptional uniformity. In: European Gallium Arsenide and other Compound Semiconductors Application Symposium,GaAs 2004, Amsterdam, The Netherlands.

Cao, X, Elgaid, K , McLelland, H , Stanley, CR , and Thayne, IG (2004) High performance 50nm T-gate In0.52Al0.48As/In0.7Ga0.3As psuedomorphic high electron mobility transistors. In: 16th International Conference on Indium phosphide and Related Materials, Kagoshima, Japan.

Elgaid, K, McLelland, H , Cao, X, Boyd, E, Moran, DAJ , Thoms, S , Zhou, H , Wilkinson, CDW , Stanley, CR , and Thayne, IG (2004) An array-based design methodology for the realisation of 94GHz MMMIC amplifiers. In: European Gallium Arsenide and other Compound Semiconductors Application Symposium,GaAs 2004, Amsterdam, The Netherlands.

Elgaid, K, McLelland, H , Cao, X, and Thayne, IG (2004) Integration of a novel, high quality Si3N4 metal insulator metal (MIM) capacitors deposited by (ICP-CVD) at room temperature with 50nm T-gate metamorphic HEMTS to realise monolithic millimetre-wave integrated circuits (MMMICs). In: 16th International Conference on Indium phosphide and Related Materials, Kagoshima, Japan.

Elgaid, K, Zhou, H, Wilkinson, CDW, and Thayne, IG (2004) Low temperature high density Si3N4 MIM capacitor technology for MMMIC and RF-MEMs applications. Microelectronic Engineering, 73-4 . pp. 452-455. (doi:10.1016/j.mee.2004.03.016)

Elgaid, K, Zhou, H , Wilkinson, CDW , and Thayne, IG (2004) Low temperature high density highly uniform Si3N4 technology for passive and active devices in MMMIC applications. In: GaAs Mantech 2004, Tampa, USA.

Johnson, N, Khokhar, AZ , Elgaid, K , Thayne, IG , Drysdale, TD , and Cumming, DRS (2004) Tools for metamaterials applications from GHz to optical frequencies. In: First Workshop of the Metamorphose, Lille-Louvain-la-Neuve, Belgium, France.

Li, X, Elgaid, K , McLelland, H , and Thayne, IG (2004) Surface mass spectrometric analysis of SiCl4/SiF4/O2 dry-etch gate recessed 120nm T-gate HEMTs. In: Microelectronic and Nanoelectronic Engineering 2004, Rotterdam, The Netherlands.

Moran, D.A.J., Boyd, E., Elgaid, K. , McEwan, F., McLelland, H., Stanley, C.R. , and Thayne, I.G. (2004) Self-aligned T-gate InP HEMT realisation through double delta doping and a non-annealed ohmic process. Microelectronic Engineering, 73-74 . pp. 814-817. ISSN 0167-9317 (doi:10.1016/j.mee.2004.03.057)

Moran, DAJ, Boyd, E, Elgaid, K , McEwan, F, McLelland, H, Stanley, CR , and Thayne, IG (2004) Self-aligned T-gate InPHEMT realisation through double delta doping and a non-annealed ohmic process. Microelectronic Engineering, 73-4 . pp. 814-817. (doi:10.1016/j.mee.2004.03.057)

Moran, DAJ, Boyd, E, Elgaid, K , McLelland, H , Stanley, CR , and Thayne, IG (2004) 50nm T-gate lattice-matched InP HEMTs with fT of 430GHz using non-annealed ohmic contact process. In: European Gallium Arsenide and other Compound Semiconductors Application Symposium,GaAs 2004, Amsterdam, The Netherlands.

Thayne, IG, Cao, X, Moran, DAJ , Boyd, E, Elgaid, K , McLelland, H , Holland, M, Thoms, S , and Stanley, CR (2004) Very high performance 50nm T-gate III-V HEMTs enabled by robust nanofabrication technologies. In: 4th IEEE Conference on Nanotechnology, Munich, Germany.

Thayne, I., Cao, X., Moran, D.A.J. , Boyd, E., Elgaid, K. , McLelland, H., Holland, M., Thoms, S. , and Stanley, C. (2004) Very high performance 50 nm T-gate III-V HEMTs enabled by robust nanofabrication technologies. In: 4th IEEE Conference on Nanotechnology 2004, 16-19 August 2004, Munich, Germany.

Thoms, S, Macintyre, DS , Elgaid, K , Stanley, CR , and Thayne, IG (2004) The use of imprint lithography to fabricate high electron mobility transistors. In: International Conference on Electron, Photon, Ion beams and Nanofabrication, San Diego, USA.

Yang, L, Asenov, A , Watling, JR , Borici, M, Barker, JR , Roy, S , Elgaid, K , Thayne, I , and Hackbarth, T (2004) Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs. Microelectronics Reliability, 44 . pp. 1101-1107. (doi:10.1016/j.microrel.2004.04.003)

2003

Moran, D., Boyd, E., McLelland, H., Elgaid, K. , Chen, Y., Macintyre, D.S. , Thoms, S. , Stanley, C.R. , and Thayne, I.G. (2003) Novel technologies for the realisation of GaAs pHEMTs with 120 nm self-aligned and nanoimprinted T-gates. Microelectronic Engineering, 67-89 . pp. 769-774. ISSN 0167-9317 (doi:10.1016/S0167-9317(03)00137-0)

Boyd, E, Moran, D , McLelland, H, Elgaid, K , Chen, YF, Macintyre, D , Thorns, S, Stanley, C , and Thayne, L (2003) 120 nm gate length E-beam and nanoimprint T-gate GaAs pHEMTs utilising non-annealed ohmic contacts. Compound Semiconductors 2002, 174 . pp. 291-294.

Cao, X, Thoms, S , Macintyre, DS , McLelland, H , Boyd, E, Elgaid, K , Hill, R , Stanley, CR , and Thayne, IG (2003) Fabrication and performance of 50nm T-gate for high electron mobility transistors. In: Microelectronic and Nanoelectronic Engineering 2003, Cambridge, UK.

Elgaid, K, McCloy, DA, and Thayne, IG (2003) Micromachined SU8 negative resist for MMIC applications on low resistivity CMOS substrates. Microelectronic Engineering, 67-8 . pp. 417-421. (doi:10.1016/S0167-9317(03)00188-6)

Elgaid, K, and Thayne, IG (2003) Passvie and active devices using Si and SiGe for MMIC applications. In: 3rd ESA Workshop on mm-wave Technology, Helsinki, Finland.

Elgaid, K, Zhou, H , Wilkinson, CDW , and Thayne, IG (2003) Low temperature high density Si3N4 MIM capacitors technology for MMIC and RF-MEMs applications. In: Microelectronic and Nanoelectronic Engineering, Cambridge, UK.

Macintyre, DS, Chen, Y, Gourlay, D, Boyd, E, Moran, D , Cao, X, Elgaid, K , Stanley, CR , Thayne, I , and Thoms, S (2003) Nanoimprint lithography process optimization for the fabrication of high electron mobility transistors. Journal of Vacuum Science and Technology B, 21 . pp. 2783-2787. (doi:10.1116/1.1629719)

Moran, D, Boyd, E, McLelland, H, Elgaid, K , Chen, Y, Macintyre, DS , Thoms, S , Stanley, CR , and Thayne, IG (2003) Novel technologies for the realisation of GaAs pHEMTs with 120 nm self-aligned and nanoimprinted T-gates. Microelectronic Engineering, 67-8 . pp. 769-774. (doi:10.1016/S0167-9317(03)00137-0)

Moran, D, Kalna, K , Elgaid, K , McEwan, F, McLelland, H , Zhuang, LL, Thayne, IG , Stanley, CR , and Asenov, A (2003) Self-aligned 0.12micron T-gate InGaAs/InAlAs HEMT technology utilizing a non-annealed contact strategy. In: ESSDERC 2003 - European Solid-State Device Research Conference, Estoril, Portugal.

Yang, L, Asenov, A , Watling, JR , Borici, M, Barker, JR , Roy, S , Elgaid, K , Thayne, IG , and Hackbarth, T (2003) Optimisation of sub 11nm Si/SiGe MODFETs for high linearity applications. In: 14th Workshop on Modeling and Simulation of Electron Devices, Barcelona, Spain.

Yang, L, Asenov, A , Watling, JR , Borici, M, Barker, JR , Roy, S , Elgaid, K , Thayne, IG , and Hackbarth, T (2003) Optimisation of sub 11nm Si/SiGe MODFETs for high linearity applications. In: IEEE Conference on Electron devices and solid state circuits, Hong Kong.

Yang, L., Asenov, A. , Borici, M., Watling, J. R. , Barker, J. R., Roy, S. , Elgaid, K. , Thayne, I. , and Hackbarth, T. (2003) Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications. In: IEEE Conference on Electron Devices and Solid-State Circuits, 16-18 December 2003, Kowloon, Hong Kong.

2002

Boyd, E, Moran, D, McLelland, H , Elgaid, K , Chen, Y, Macintyre, DS , Thoms, S , Stanley, CR , and Thayne, IG (2002) 120nm gate length e-beam and nanoimprint T-gate GaAs pHEMTs itilising non-annealed ohmic contacts. In: International Symposium on Compound Semiconductors, Lausanne, Switzerland.

Burns, G, Chong, H, Edgar, DL, Ross, A , Elgaid, K , McLelland, H , Ferguson, S , McEwan, F, and Thayne, IG (2002) Millimetre-wave high frequency photonic crystal antennas. In: IEEE 2002 High Frequency Postgraduate Student Colloquium, London, UK.

Edgar, DL et al. (2002) Millimeter-wave performance of In/AlAs/InGaAs HEMT's using a UVIII/PMMA bilayer for 70nm T-gate fabrication. In: European Microwave Conference, Milan, Italy.

Elgaid, K, McCloy, DA, Edgar, DL, and Thayne, IG (2002) Coplanar waveguide and spiral inductors for MMIC applications on low resistivity CMOS grade silicon using micromachined SU8 negative resist. In: European Microwave Conference, Milan, Italy.

Elgaid, K, McCloy, DA, Ferguson, S , and Thayne, IG (2002) Coplanar waveguide and spiral inductors for MMIC applications on low resistivity CMOS grade silicon using micromachined SU8 negative resist. In: Asia Pacific Conference, Kyoto, Japan.

Elgaid, K, McCloy, DA, and Thayne, IG (2002) Micromachined SU8 negative resist for MMIC applications on low resistivity CMOS substrate. In: Microelectronic and Nanoelectronic Engineering 2002, Lugano, Switzerland.

Kalna, K, Roy, S , Asenov, A , Elgaid, K , and Thayne, I (2002) Scaling of pseudomorphic high electron mobility transistors to decanano dimensions. Solid-state Electronics, 46 . pp. 631-638.

Moran, D, Boyd, E, McLelland, H , Elgaid, K , Chen, Y, Macintyre, DS , Thoms, S , Stanley, CR , and Thayne, IG (2002) Novel technologies for the realisation of GaAs pHEMTs wtih 20nm self-aligned and nanoimprinted T-gates. In: Micro- and NanoEngineering 2002, Lugano, Switzerland.

2001

Li, X., Elgaid, K. , McLelland, H., and Thayne, I.G. (2001) Effects of pressure and capping layer thickness on sub-micron T-gate recess etching of GaAs p-HEMTs by SiCl4/SiF4/O2 reactive ion etch. Microelectronic Engineering, 57-58 . pp. 633-640. ISSN 0167-9317 (doi:10.1016/S0167-9317(01)00495-6)

Chongcheawchamnan, M, Nam, S, Robertson, ID, Elgaid, K , and Thayne, IG (2001) Ultrawideband characterisation of CPW GaAs monolithic 60 GHz couplers using overlaid structures. In: Asia pacific microwave conference, Taipei.

Kalna, K, Asenov, A , Elgaid, K , and Thayne, I (2001) Scaling of pHEMTs to decanano dimensions. Vlsi Design, 13 . pp. 435-439.

Li, X, Elgaid, K , McLelland, H, and Thayne, IG (2001) Effects of pressure and capping layer thickness on sub-micron T-gate recess etching of GaAs p-HEMTs by SiCl4/SiF4/O-2 reactive ion etch. Microelectronic Engineering, 57-8 . pp. 633-640.

Yip, JGM, Collier, RJ, Jastrebski, AK, Edgar, DL, Elgaid, K , Thayne, IG , and Li, D (2001) Substrate-modes in doubled-layered coplanar waveguide. In: European Microwave Conference, London.

Young, PR, McPherson, DS, Chrisostomidis, C, Elgaid, K , Thayne, IG , Lucyszyn, S, and Robertson, ID (2001) Accurate non-uniform transmission line model and its application to the de-embedding of on-wafer measurements. Iee Proceedings-microwaves Antennas and Propagation, 148 . pp. 153-156.

2000

Kalna, K., Asenov, A. , Elgaid, K. , and Thayne, I. (2000) Effect of impact ionization in scaled pHEMTs. In: 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications., 13-14 November 2000, Glasgow, UK.

Kalna, K., Asenov, A. , Elgaid, K. , and Thayne, I. (2000) Performance of aggressively scaled pseudomorphic HEMTs: a monte carlo simulation study. In: Third International EuroConference on Advanced Semiconductor Devices and Microsystems., 16-18 October 2000, Smolenice Castle, Slovakia.

Kalna, K., Roy, S. , Asenov, A. , Elgaid, K. , and Thayne, I. (2000) RF analysis of aggressively scaled pHEMTs. In: 30th European Solid-State Device Research Conference., 11-13 September 2000, Cork, Ireland.