2012

Oxland, R. et al. (2012) An ultralow-resistance ultrashallow metallic source/drain contact scheme for III-V NMOS. IEEE Electron Device Letters, 33 (4). pp. 501-503. ISSN 0741-3106 (doi:10.1109/LED.2012.2185919)

2011

Li, C., Khalid, A. , Caldwell, S.H.P., Holland, M. , Dunn, G.M., Thayne, I.G. , and Cumming, D.R.S. (2011) Design, fabrication and characterization of In_0.23Ga_0.77As-channel planar Gunn diodes for millimeter wave applications. Solid-State Electronics, 64 (1). pp. 67-72. ISSN 0038-1101 (doi:10.1016/j.sse.2011.07.008)

Li, C., Lok, L.B. , Khalid, A. , Thayne, I.G. , and Cumming, D.R.S. (2011) Investigation of loading effect on power performance for Planar Gunn diodes using load-pull measurement technique. IEEE Microwave and Wireless Components Letters, 21 (10). pp. 556-558. ISSN 1531-1309 (doi:10.1109/LMWC.2011.2163496)

Bentley, S. et al. (2011) Electron mobility in surface- and buried- channel flatband In_0.53Ga_0.47As MOSFETs with ALD Al₂O₃ gate dielectric. IEEE Electron Device Letters, 32 (4). pp. 494-496. ISSN 0741-3106 (doi:10.1109/LED.2011.2107876)

Paterson, G.W., Holland, M.C. , Bentley, S.J. , Thayne, I.G. , and Long, A.R. (2011) Gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As n+ MOS capacitors: The interface state model and beyond. Journal of Applied Physics, 109 (12). p. 124112. ISSN 0021-8979 (doi:10.1063/1.3599895)

Paterson, G.W., Holland, M.C. , Thayne, I.G. , and Long, A.R. (2011) Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses. Journal of Applied Physics, 110 (11). p. 114115. ISSN 0021-8979 (doi:10.1063/1.3665720)

2010

Hwang, C.J., Lok, L.B. , Thayne, I.G. , and Elgaid, K. (2010) W-band microstrip band-pass filter using branch-line coupler with open stubs. Microwave and Optical Technology Letters, 52 (6). pp. 1436-1439. ISSN 0895-2477 (doi:10.1002/mop.25185)

Benbakhti, B., Ayubi-Moak, J.S. , Kalna, K. , Lin, D., Hellings, G., Brammertz, G., De Meyer, K., Thayne, I.G. , and Asenov, A. (2010) Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures. Microelectronics Reliability, 50 (3). pp. 360-364. ISSN 0026-2714 (doi:10.1016/j.microrel.2009.11.017)

Taking, S. et al. (2010) Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium. Electronics Letters, 46 (4). pp. 301-302. ISSN 0013-5194 (doi:10.1049/el.2010.2781)

Hwang, C-J., Lok, L.B. , Chong, H.M.H. , Holland, M. , Thayne, I.G. , and Elgaid, K. (2010) An ultra-low-power MMIC amplifier using 50nm delta In_0.52Al_0.48As/In_0.53Ga_0.47As metamorphic HEMT. IEEE Electron Device Letters, 31 (11). pp. 1230-1232. ISSN 0741-3106 (doi:10.1109/LED.2010.2070484)

Ignatova, O., Thoms, S. , Jansen, W., Macintyre, D.S. , and Thayne, I.G. (2010) Lithography scaling issues associated with III-V MOSFETs. Microelectronic Engineering, 87 (5-8). pp. 1049-1051. ISSN 0167-9317 (doi:10.1016/j.mee.2009.11.093)

Li, X., Bentley, S. , Holland, M.C. , Zhou, H. , Thoms, S. , Macintyre, D.S. , and Thayne, I.G. (2010) A low damage fully self-aligned gate-last process for fabricating sub-100 nm gate length enhancement mode GaAs MOSFETs. In: 54th International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication, June 2010, Anchorage, USA.

Li, X., Bentley, S. , McLelland, H., Holland, M. , Zhou, H. , Thoms, S. , Macintyre, D.S. , and Thayne, I. (2010) Low damage fully self-aligned replacement gate process for fabricating deep sub-100 nm gate length GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, 28 (6). ISSN 1071-1023 (doi:10.1116/1.3501355)

Li, X., Zhou, H. , Hill, R.J.W., Longo, P. , Holland, M. , and Thayne, I.G. (2010) Dry etching device quality high-kappa GaxGdyOz gate oxide in SiCl4 chemistry for low resistance ohmic contact realisation in fabricating III-V MOSFETs. Microelectronic Engineering, 87 (5-8). pp. 1587-1589. ISSN 0167-9317 (doi:10.1016/j.mee.2009.11.011)

Li, X., Bentley, S. , McLelland, H. , Holland, M. , Zhou, H. , Thoms, S. , Macintyre, D. , and Thayne, I. (2010) Low damage fully self-aligned replacement gate process for fabricating deep sub-100 nm gate length GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, 28 (6). C6L1. ISSN 1071-1023 (doi:10.1116/1.3501355)

Longo, P., Holland, M.C. , Paterson, G.W. , Craven, A.J. , and Thayne, I.G. (2010) An EELS sub-nanometer investigation of the dielectric gate stack for the realization of InGaAs based MOSFET devices. Journal of Physics: Conference Series, 241 . 012034. ISSN 1742-6596 (doi:10.1088/1742-6596/241/1/012034)

Longo, P., Jansen, W., Merckling, C., Penaud, J., Caymax, M., Thayne, I. , and Craven, A. (2010) A TEM Nanoanalytical Investigation of Pd/Ge Ohmic Contacts for the Miniaturization and Optimization of n-InGaAs MOSFET Devices. In: Electron Microscopy and Analysis Group Conference, 8-11 September 2009, Sheffield, England.

Melitz, W., Shen, J., Lee, S., Bentley, S. , Macintyre, D. , Holland, M. , Thayne, I. , and Kummel, A. (2010) Potential mapping of UHV cleaved functional III-V MOSCAPs with Kelvin probe force microscopy. In: J: Materials and Devices for Beyond CMOS Scaling, 6 April 2010, San Francisco, USA.

Oxland, R.K., Li, X., Ferguson, S., Bentley, S. , and Thayne, I.G. (2010) Copper-plated 50 nm T-gate fabrication. Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, 28 (6). ISSN 1071-1023 (doi:10.1116/1.3501346)

2009

Macintyre, D.S., Ignatova, O., Thoms, S. , and Thayne, I.G. (2009) Resist residues and transistor gate fabrication. Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, 27 (6). pp. 2597-2601. ISSN 1071-1023 (doi:10.1116/1.3243176)

Abuelmaatti, A., Thayne, Iain , and Abuelma'atti, M. T. (2009) Modify MOSFET Models For Nonlinear Quantification. Microwaves and Rf, 48 (9). 63-+. ISSN 0745-2993

Hwang, C.J., Lok, L.B. , Thayne, I.G. , and Elgaid, K. (2009) Parallel coupled-line bandpass filter with branch-line shape for G-band frequency. Electronics Letters, 45 (16). pp. 838-840. ISSN 0013-5194 (doi:10.1049/el.2009.0716)

Holland, M., Longo, Paolo , Paterson, G.W., Reid, W., Long, A. , Stanley, C.R. , Craven, A.J. , Thayne, I.G. , and Gregory, R. (2009) Characteristics of Gd-GaO grown by MBE. Microelectronic Engineering, 86 (3). pp. 244-248. ISSN 0167-9317 (doi:10.1016/j.mee.2008.01.043)

Abuelma'atti, A.M.T., Thayne, I.G. , and Abuelma'atti, M (2009) Design of source degenerated cascode dual functionality Lna/Pa for IEEE 802.15.4 (ZigBee). Microwave Journal, 52 (6). 108-+. ISSN 0192-6225

Ayubi-Moak, J., Benbakhti, B. , Kalna, K. , Paterson, G. , Hill, R. , Passlack, M., Thayne, I. , and Asenov, A. (2009) Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs. Microelectronic Engineering, 86 (7-9). pp. 1564-1567. ISSN 0167-9317 (doi:10.1016/j.mee.2009.03.024)

Ayubi-Moak, J.S., Benbakhti, B. , Kalna, K. , Paterson, G.W., Hill, R. , Passlack, M., Thayne, I.G. , and Asenov, A. (2009) Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs. Microelectronic Engineering, 86 (7-9). pp. 1564-1567. ISSN 0167-9317 (doi:10.1016/j.mee.2009.03.024)

Bentley, S., Li, X. , Moran, D. , and Thayne, I.G. (2009) Two methods of realising 10 nm T-gate lithography. Microelectronic Engineering, 86 (4-6). pp. 1067-1070. ISSN 0167-9317 (doi:10.1016/j.mee.2008.12.029)

Hwang, C.J., Chong, H.M.H., Holland, M. , Thayne, I.G. , and Elgaid, K. (2009) DC-35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications. Electronics Letters, 45 (12). pp. 632-633. ISSN 0013-5194 (doi:10.1049/el.2009.0684)

Hwang, C.J., Lok, L.B. , Thayne, I.G. , and Elgaid, K. (2009) A wide bandpass filter with defected ground structure for wide out-of-band suppression. In: APMC: 2009 Asia Pacific Microwave Conference, 7-10 December 2009, Singapore. IEEE, Piscataway, N.J., USA, pp. 2018-2021. ISBN 9781424428014

Hwang, C.J., McGregor, I. , Oxland, R. , Whyte, G., Thayne, I.G. , and Elgaid, K. (2009) An ultra-low power OOK RF transceiver for wireless sensor networks. In: EuMC 09: European Microwave Conference, Rome, Italy, 29 Sept - 1 Oct 2009. IEEE Computer Society, Burlingame, USA, pp. 1323-1326. ISBN 9781424447480

Li, X., Hill, R.J.W. , Longo, P. , Holland, M.C. , Zhou, H. , Thoms, S. , Macintyre, D.S. , and Thayne, I.G. (2009) Fully self-aligned process for fabricating 100 nm gate length enhancement mode GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, 27 (6). pp. 3153-3157. ISSN 1071-1023 (doi:10.1116/1.3256624)

Lok, L.B., Hwang, C.J., Chong, H.M.H. , Thayne, I.G. , and Elgaid, K. (2009) A W-band MMIC vector modulator utilizing tandem couplers and 50nm MHEMTs. In: European Microwave Conference, 29 Sept - 1 Oct 2009, Rome, Italy.

Longo, P., Craven, A.J. , Holland, M.C. , Moran, D.A.J. , and Thayne, I.G. (2009) A nanoanalytical investigation of high-k dielectric gate stacks for GaAs based MOSFET devices. Microelectronic Engineering, 86 (3). pp. 214-217. ISSN 0167-9317 (doi:10.1016/j.mee.2008.08.013)

Longo, P., Paterson, G.W , Holland, M.C. , Thayne, I.G. , and Craven, A.J. (2009) A nanoanalytical investigation of the Ga2O3/GaGdO dielectric gate stack for InGaAs based MOSFET devices. Microelectronic Engineering, 86 (7-9). pp. 1568-1570. ISSN 0167-9317 (doi:10.1016/j.mee.2009.03.131)

McGregor, I., Lok, L.B. , Hwang, C.J., Oxland, R. , Whyte, G. , Thayne, I.G. , and Elgaid, K. (2009) Low complexity, low power, 10 GHz super-regenerative transceiver. In: APMC: 2009 Asia Pacific Microwave Conference, 7-10 December 2009, Singapore.

Thayne, I.G. et al. (2009) Review of current status of III-V MOSFETs. ECS Transactions, 19 (5). pp. 275-286. ISSN 1938-5862 (doi:10.1149/1.3119552)

2008

Thayne, I. G., Hill, R. J. W. , Moran, D.A.J., Kalna, K. , Asenov, A. , and Passlack, M. (2008) Comments on "High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm". IEEE Electron Device Letters, 29 (10). pp. 1085-1086. ISSN 0741-3106 (doi:10.1109/LED.2008.2002752)

Hill, R.J.W. et al. (2008) 1 μm gate length, In_0.75Ga_0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737μS/μm. Electronics Letters, 44 . pp. 498-500. ISSN 0013-5194 (doi:10.1049/el:20080470)

Abuelmaatti, A., Thayne, I.G. , and Abuelma'atti, M.T. (2008) Harmonic and IMD frequency components affecting nonlinear distortion with feed back in MOSFET amplifiers. In: IEEE Asia Pacific Conference on Circuits and Systems, 2008. APCCAS 2008. IEEE, pp. 1600-1603. ISBN 9781424423415

Abuelmaatti, A., Thayne, I.G. , and Abuelma'atti, M.T. (2008) Linearization of table-based MOSFET model parameters for nonlinear quantification. In: Circuits and Systems, 2008. APCCAS 2008. IEEE Asia Pacific Conference. IEEE, pp. 1608-1611. ISBN 9781424423415

Bentley, S., Li, X. , Moran, D. A. J. , and Thayne, I. G. (2008) Fabrication of 22 nm T-gates for HEMT applications. Microelectronic Engineering, 85 (5-6). pp. 1375-1378. ISSN 0167-9317 (doi:10.1016/j.mee.2008.01.058)

Hill, R. J. W. et al. (2008) 1 mu m gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 mu S/mm. Electronics Letters, 44 (7). pp. 498-499. ISSN 0013-5194 (doi:10.1049/el:20080470)

Hill, R.J.W., Moran, D.A.J. , Li, X. , Zhou, H. , Macintyre, D.S. , Thoms, S. , Asenov, A. , and Thayne, I.G. (2008) Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics. In: Proceedings of the IEEE Silicon Nanoelectronics Workshop, 15-16 June 2008, Honolulu, Hawaii. IEEE Computer Society, Piscataway, N.J., USA. ISBN 9781424420711

Kalna, K., Seoane, N., Garcia-Loureiro, A. J., Thayne, I. G. , and Asenov, A. (2008) Benchmarking of scaled InGaAs implant-free NanoMOSFETs. IEEE Transactions on Electron Devices, 55 (9). pp. 2297-2306. ISSN 0018-9383 (doi:10.1109/TED.2008.927658)

Kalna, K. et al. (2008) III-V MOSFETs for digital applications with silicon co-integration. In: International Conference on Advanced Semiconductor Devices and Microsystems: 12-16 October 2008, Smolenice, Slovakia. IEEE Computer Society, Piscataway, N.J., USA, pp. 39-46. ISBN 9781424423255

Li, X., Hill, R.J.W. , Zhou, H P. , Wilkinson, C.D.W. , and Thayne, I.G. (2008) A low damage Si3N4 sidewall spacer process for self-aligned sub-100 nm III-V MOSFETs. Microelectronic Engineering, 85 (5-6). pp. 996-999. ISSN 0167-9317 (doi:10.1016/j.mee.2007.12.064)

Li, X., Zhou, H.P. , Abrokwah, J., Zurcher, P., Rajagopalan, K., Liu, W., Gregory, R., Passlack, M., and Thayne, I.G. (2008) Low damage ashing and etching processes for ion implanted resist and Si3N4 removal by ICP and RIE methods. Microelectronic Engineering, 85 (5-6). pp. 966-968. ISSN 0167-9317 (doi:10.1016/j.mee.2007.12.056)

Lok, L., Hwang, C.J., Chong, H.M.H. , Elgaid, K. , and Thayne, I.G. (2008) Measurement and modeling of CPW transmission lines and power dividers on electrically thick GaAs substrate to 220GHz. In: 33rd International Conference on Infrared, Millimeter and Terahertz Waves: 15-19 September 2008, Pasadena, CA, USA. IEEE Computer Society, Piscataway, N.J., USA, pp. 734-735. ISBN 9781424421190

Longo, P., Craven, A.J. , Scott, J. , Holland, M. , and Thayne, I.G. (2008) Elemental profiling of III-V MOSFET high-k dielectric gate stacks using EELS spectrum imaging. In: Cullis, A.G. and Midgley, P.A. (eds.) Microscopy of Semiconducting Materials 2007. Series: Springer Proceedings in Physics (120). Springer-Verlag, Berlin, Germany, pp. 317-320. ISBN 9781402086144

Longo, P., Scott, J. , Craven, A.J. , Hill, R.J.W. , and Thayne, I.G. (2008) EFTEM and EELS SI: tools for investigating the effects of etching processes for III-V MOSFET devices. Journal of Physics: Conference Series, 126 (1). 012053. ISSN 1742-6588 (doi:10.1088/1742-6596/126/1/012053)

Passlack, M., Droopad, R., Thayne, I.G. , and Asenov, A. (2008) III-V MOSFETs for future transistor applications. Solid State Technology, 51 (12). pp. 26-30. ISSN 0038-111X

Paterson, G.W., Longo, P. , Wilson, J.A. , Craven, A.J. , Long, A.R. , Thayne, I.G. , Passlack, M., and Droopad, R. (2008) Gallium oxide and gadolinium gallium oxide insulators on Si δ-doped GaAs/AlGaAs heterostructures. Journal of Applied Physics, 104 (10). p. 103719. ISSN 0021-8979 (doi:10.1063/1.3029661)

Whyte, G., Darbari, F., McGregor, I. , Glover, I., and Thayne, I.G. (2008) Different feeding geometries for planar elliptical UWB dipoles, and the excitation of leakage current. In: 2008 European Microwave Conference (EuMC), 27-31 October 2008, Amsterdam, The Netherlands.

2007

Hill, R.J.W. et al. (2007) Enhancement-mode GaAs MOSFETs with an In_0.3Ga_0.7As channel, a mobility of over 5000 cm²/V · s, and transconductance of Over 475 μS/μm. IEEE Electron Device Letters, 284 (12). pp. 1080-1082. ISSN 0741-3106 (doi:10.1109/LED.2007.910009)

Passlack, M. et al. (2007) High mobility III-V MOSFETs for RF and digital applications. In: IEEE International Electron Devices Meeting (IEDM 2007), 10-12 December 2007, Washington DC, USA.

Khalid, A.H., Pilgrim, N.J., Dunn, G.M., Holland, M.C., Stanley, C.R. , Thayne, I.G. , and Cumming, D.R.S. (2007) A planar Gunn diode operating above 100 GHz. IEEE Electron Device Letters, 28 (10). pp. 849-851. ISSN 0741-3106 (doi:10.1109/LED.2007.904218)

Holland, M., Stanley, C.R. , Reid, W. , Hill, R.J.W. , Moran, D.A.J. , Thayne, I. , Paterson, G.W. , and Long, A.R. (2007) Ga2O3 grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors. Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, 25 (5). pp. 1706-1710. ISSN 1071-1023 (doi:10.1116/1.2778690)

Khalid, A.H., Dunn, G.M., Pilgrim, N., Stanley, C.R. , Thayne, I.G. , Holland, M., and Cumming, D.R.S. (2007) Planar Gunn-type triode oscillator at 83 GHz. Electronics Letters, 43 (15). pp. 837-838. ISSN 0013-5194 (doi:10.1049/el:20071099)

Holland, M., Stanley, C.R. , Reid, W. , Thayne, I. , Paterson, G.W. , Long, A.R. , Longo, P. , Scott, J. , Craven, A.J. , and Gregory, R. (2007) GdGaO: a gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, 25 (3). pp. 1024-1028. ISSN 1071-1023 (doi:10.1116/1.2738480)

Hill, R.J.W., Moran, D.A.J. , Li, X., Zhou, H. , Macintyre, D. , Thoms, S. , Droopad, R., Passlack, M., and Thayne, I.G. (2007) 180 nm metal gate, high-k dielectric, implant free III-V MOSFETs with transconductance of over 425μS/μm. Electronics Letters, 43 . pp. 543-545. ISSN 0013-5194 (doi:10.1049/el:20070427)

Kalna, K., Wilson, J.A., Moran, D.A.J. , Hill, R.J.W., Long, A.R., Droopad, R., Passlack, M., Thayne, I.G. , and Asenov, A. (2007) Monte Carlo simulations of high-performance implant free In_0.3Ga_0.7 nano-MOSFETs for low-power CMOS applications. IEEE Transactions on Nanotechnology, 6 (1). pp. 106-112. ISSN 1536-125X (doi:10.1109/TNANO.2006.888543)

Asenov, A, Kalna, K , Thayne, I , and Hill, RJW (2007) Simulation of implant free III-V MOSFETs for high performance low power Nano-CMOS applications. Microelectronic Engineering, 84 . pp. 2398-2403. (doi:10.1016/j.mee.2007.04.117)

Li, X, Zhou, H, Hill, RJW, Wilkinson, CDW, and Thayne, IG (2007) Dry etching of a device quality high-k GaxGdyOz gate oxide in Ch(4)/H-2-O-2 chemistry for the fabrication of III-V MOSFETs. Microelectronic Engineering, 84 . pp. 1124-1127. (doi:10.1016/j.mee.2007.01.045)

Moran, D.A.J. et al. (2007) Sub-micron, metal gate, high-к dielectric, implant-free, enhancement-mode III-V MOSFETs. In: 37th European Solid State Device Research Conference (ESSDERC 2007), 11-13 September 2007, Munich, Germany.

Rajagopalan, K. et al. (2007) Enhancement mode n-MOSFET with high-k dielectric on GaAs substrate. In: IEEE 65th Annual Device Research Conference, 18-20 June 2007, South Bend, Indiana, USA.

Thayne, I, Elgaid, K , Moran, D , Cao, X, Boyd, E, McLelland, H, Holland, M, Thoms, S , and Stanley, C (2007) 50 nm metamorphic GaAs and InPHEMTs. Thin Solid Films, 515 . pp. 4373-4377. (doi:10.1016/j.tsf.2006.07.104)

2006

Paterson, G., Wilson, J.A. , Moran, D. , Hill, R. , Long, A.R. , Thayne, I. , Passlack, M., and Droopad, R. (2006) Gallium oxide (Ga2O3)on gallium arsenide - A low defect, high-K system for future devices. Materials Science and Engineering: B Advanced Functional Solid-State Materials, 135 (3). pp. 277-281. ISSN 0921-5107 (doi:10.1016/j.mseb.2006.08.026)

Moran, D.A.J., McLelland, H., Elgaid, K. , Whyte, G., Stanley, C.R. , and Thayne, I. (2006) 50-nm self-aligned and 'standard' T-gate InP pHEMT comparison: the influence of parasitics on performance at the 50-nm node. IEEE Transactions on Electron Devices, 53 (12). pp. 2920-2925. ISSN 0018-9383 (doi:10.1109/TED.2006.885674)

Abuelmaatti, A, Thayne, IG , McGregor, I , and Wasige, E (2006) A new implementation for RF SiCMOS transistor model using SDD for quantifying individual contribution to distortion from transistor's nonlinear parameters. In: Asia Pacific Microwave Conference, Yokohama, Japan.

Elgaid, K, Holland, MC , McLelland, H , Moran, DAJ , Thoms, S , Stanley, CR , and Thayne, IG (2006) 50nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications. In: Indium Phosphide & Related Materials, Princeton, USA.

Elgaid, K, Thayne, IG , Whyte, G , Martens, J, and Culver, D (2006) Parasitic moding influences on coplanar waveguide passive components at G-band frequency. In: European Microwave Conference, Manchester, UK.

Holland, MC, Stanley, CR , Reid, W, Thayne, IG , Paterson, GW, and Long, AR (2006) Ga2O3 grown on GaAs by MBE for GAAs MOSFETs. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.

Holland, MC, Stanley, CR , Reid, W, Thayne, IG , Paterson, GW, and Long, AR (2006) Ga2O3 grown on GaAs by MBE for MOSFETs. In: North American Molecular Bean Epitaxy Conference, North Carolina, USA.

Holland, MC, Stanley, CR , Reid, W, Thayne, IG , Paterson, GW, Long, AR, Longo, P, Scott, J, and Craven, A (2006) GdGaO a gate dielectric for GaAs MOSFETs. In: North American Molecular Bean Epitaxy Conference, North Carolina, USA.

Holland, MC, Stanley, CR , Reid, W, Thayne, IG , Paterson, GW, Long, AR, Longo, P, Scott, J, and Craven, A (2006) GdGaO a gate dielectric for GaAs MOSFETs. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.

Kalna, K, Hill, R , Wilson, JA, Moran, DAJ , Long, AR, Asenov, A , and Thayne, IG (2006) Monte Carlo simulation of sub-30 nm high indium implant free III-V MOSFETs for low power digital applications. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.

Kalna, K, Wilson, JA, Moran, DAJ , Hill, R , Long, AR, Droopad, R, Passlack, M, Thayne, IG , and Asenov, A (2006) MC simulation of high performance InGaAs nano-MOSFETs for low power CMOS applications. In: IEEE 2006 Silicon Nanoelectronics Workshop, Honolulu.

Li, X, Cao, X, Zhou, H, Wilkinson, CDW, Thoms, S , Macintyre, D , Holland, M, and Thayne, IG (2006) 30 nm Tungsten gates etched by a low damage ICP etching for the fabrication of compound semiconductor transistors. Microelectronic Engineering, 83 . pp. 1152-1154. (doi:10.1016/j.mee.2006.01.073)

Li, X, Cao, X, Zhou, H, Wilkinson, CDW, Thoms, S , Macintyre, D , Holland, M, and Thayne, IG (2006) A low damage RIE process for the fabrication of compound semiconductor based transistors with sub-100 nm tungsten gates. Microelectronic Engineering, 83 . pp. 1159-1162. (doi:10.1016/j.mee.2006.01.074)

Li, X, Hill, R , Zhou, H , Wilkinson, CDW , and Thayne, IG (2006) A low damage RIE SiN sidewall spacer process for self-aligned sub-100nm III-V MOSFETs. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.

Li, X, Zhou, H , Cao, X, Wilkinson, CDW , and Thayne, IG (2006) Low damage dry etching processes for the fabrication of compound semiconductor based transistors with sub-100nm tungsten gates. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.

Li, X, Zhou, H , Hill, R , Wilkinson, CDW , and Thayne, IG (2006) Dry etching of a device quality high-k GaxGdyOz oxide in CH4/H2-O2 chemistry for the fabrication of III-V MOSFETs. In: 32nd International Conference on Micro-and Nano-Engineering 2006, Barcelona, Spain.

Li, X, Zhou, HP, Wilkinson, CDW, and Thayne, IG (2006) Optical emission spectrometry of plasma in low-damage sub-100nm tungsten gate reactive ion etching process for compound semiconductor transistors. Japanese Journal of Applied Physics Part 1-regular Papers Brief Communications and Review Papers, 45 . pp. 8364-8369. (doi:10.1143/JJAP.45.8364)

Longo, P, Scott, J, Hill, R , Moran, DAJ , Craven, A, and Thayne, IG (2006) Elemental mapping of III-V MOSFET structures using energy filtered transmission electron microscopy. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.

McGregor, I, Wasige, E , and Thayne, IG (2006) Sub milli-watt 2.4GHz super regenerative transceiver with ultra low duty cycle. In: Asia Pacific Microwave Conference, Yokohama, Japan.

McGregor, I, Whyte, G , Elgaid, K , Wasige, E , and Thayne, IG (2006) A 400 micro W Tx/380 microW Rx 2.4GHz super-regenerative GaAs transceiver. In: European Microwave Conference, Manchester, UK.

Moran, DAJ, McLelland, H , Elgaid, K , Stanley, CR , and Thayne, IG (2006) Scaling of self-aligned T-gate InGaAs/InAlAs HEMT technology. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.

Moran, DAJ, McLelland, H, Elgaid, K , Whyte, G, Stanley, CR , and Thayne, I (2006) 50-nm self-aligned and "standard" T-gate InP pHEMT comparison: The influence of parasitics on performance at the 50-nm node. IEEE Transactions on Electron Devices, 53 . pp. 2920-2925. (doi:10.1109/TED.2006.885674)

Scott, J, Longo, P, Holland, MC , Stanley, CR , Craven, A, and Thayne, IG (2006) Elemental profiling of III-V MOSFET dielectric stacks using scanning transmission electron microscopy with electron energy loss spectroscopy. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.

Thayne, IG et al. (2006) III-V MOSFETs for Digital Applications: an overview. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.

Thayne, I., Elgaid, K. , Holland, M., McLelland, H., Moran, D.A.J. , Thoms, S. , and Stanley, C. (2006) 50 nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications. In: 2006 International Conference on Indium Phosphide and Related Materials, 7-11 May 2006, Princeton, New Jersey, USA.

Wilson, JA, Paterson, GW, Moran, DAJ , Hill, R , Thayne, IG , and Long, AR (2006) III-V MOS systems - charge control and transport. In: UK III-V Compound Semiconductors 2006, Sheffield, UK.

Zhou, HP, Elgaid, K , Wilkinson, C, and Thayne, I (2006) Low-hydrogen-content silicon nitride deposited at room temperature by inductively coupled plasma deposition. Japanese Journal of Applied Physics Part 1-regular Papers Brief Communications and Review Papers, 45 . pp. 8388-8392. (doi:10.1143/JJAP.45.8388)

2005

Elgaid, K., McLelland, H., Holland, M., Moran, D.A.J. , Stanley, C.R. , and Thayne, I.G. (2005) 50-nm T-gate metamorphic GaAs HEMTs with f_T of 440 GHz and noise figure of 0.7 dB at 26 GHz. IEEE Electron Device Letters, 26 (11). pp. 784-786. ISSN 0741-3106 (doi:10.1109/LED.2005.857716)

Cao, X et al. (2005) Low damage sputter deposition of tungsten for decanano compound semiconductor transistors. Journal of Vacuum Science and Technology B, 23 . pp. 3138-3142. (doi:10.1116/1.2127937)

Dardari, F, Stewart, RW, McGregor, I , Whyte, G , and Thayne, IG (2005) Channel estimation for short range wireless sensor networks. In: 2nd IEE/~EURASIP Conference, Southhampton, UK.

Elgaid, K, McLelland, H, Holland, M, Moran, DAJ , Stanley, CR , and Thayne, IG (2005) 50-nm T-gate metamorphic GaAs HEMTs with f(T) of 440 GHz and noise figure of 0.7 dB at 26 GHz. IEEE Electron Device Letters, 26 . pp. 784-786. (doi:10.1109/LED.2005.857716)

Elgaid, K, McLelland, H , Stanley, CR , and Thayne, IG (2005) Low noise W-band MMMIC amplifier using 50nm InP technology for millimeterwave receivers applications. In: 2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALSConference proceedings - indium phosphide and related materials, NEW YORK.

Elgaid, K, Moran, DAJ , McLelland, H , Holland, MC , and Thayne, IG (2005) Low noise high performance 50nm T-GATE metamorphic HEMT with cut-off frequency FTOF 440Ghz for millimeterwave imaging receivers applications. In: 2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALSConference proceedings - indium phosphide and related materials, NEW YORK.

Elgaid, K, Zhou, H , Wilkinson, CDW , and Thayne, IG (2005) Room temperature deposited Si3N4 characterization and applications in MMICs. In: 8th International symposium on Silicon Nitride and Silicon dioxide thin insulating films and emerging dielectrics, Quebec, Canada.

Elgaid, K., McLelland, H., Stanley, C.R. , and Thayne, I.G. (2005) Low noise W-band MMMIC amplifier using 50 nm InP technology for millimeterwave receivers applications. In: International Conference on Indium Phosphide and Related Materials, 8-12 May 2005, Piscataway.

Elgaid, K., Moran, D. , McLelland, H., Holland, M., and Thayne, I.G. (2005) Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency f_T of 440 GHz for millimeterwave imaging receivers applications. In: IEEE International Conference on Indium Phosphide and Related Materials, 2005, 8-12 May 2005, Glasgow, Scotland.

Hettak, K, Stubbs, MG, Elgaid, K , and Thayne, IG (2005) Design and characterisation of elevated coplanar waveguide and thin film microstrip structures for mm-wave applications. In: European Microwave Conference, Paris, France.

Hettak, K, Stubbs, MG, Elgaid, K , and Thayne, IG (2005) A compact high performance semi-lumped low pass filter fabricated with a standard airbridge process. In: European Microwave Conference, Paris, France.

Kalna, K, Elgaid, K , Thayne, IG , and Asenov, A (2005) Modelling of InPHEMTs with high indium content channels. In: 2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALSConference proceedings - indium phosphide and related materials, NEW YORK.

Li, X, Cao, X, Zhou, H , Wilkinson, CDW , Thoms, S , Macintyre, DS , Holland, MC , and Thayne, IG (2005) 30nm tungsten gates etched by a low damage ICP etching for the fabrication of compound semiconductor transistors. In: 31st International Conference on Micro and Nano-Engineering 2005, Vienna, Austria.

Li, X, Cao, X, Zhou, H , Wilkinson, CDW , Thoms, S , Macintyre, DS , Holland, MC , and Thayne, IG (2005) A low damage RIE process for the fabrication of cmpound semiconductor based transistors wtih sub-100nm tungsten gates. In: 31st International Conference on Micro and Nano-Engineering 2005, Vienna, Austria.

Li, X, Elgaid, K , McLelland, H, and Thayne, IG (2005) Surface mass spctrometric analysis of SiCl4/SiF4/O-2 dry etch gate recessed 120 nm T-gate GaAs pHEMTs. Microelectronic Engineering, 78-79 . pp. 233-238. (doi:10.1016/j.mee.2004.12.032)

McGregor, I, Maclean, D., Wasige, E , and Thayne, IG (2005) Using return ratios to desing microwave oscillators. In: 10th High Frequency Postgraduate Student Colloquium, Leeds, UK.

Moran, DAJ, Cao, X, Elgaid, K , Boyd, E, Chen, Y, Thoms, S , McLelland, H , Stanley, CR , Holland, MC , and Thayne, IG (2005) Sub 100nm III-V HEMT technology: Approaching the Terahertz Regime. In: International Workshop on Terahertz Technology, Osaka, Japan.

Thayne, IG, Elgaid, K , Moran, DAJ , Cao, X, Boyd, E, McLelland, H , Holland, MC , Thoms, S , and Stanley, CR (2005) 50nm Metamorphic GaAs and InP HEMTs. In: 3rd International Conference for Advanced Materials and Technologies, Singapore.

2004

Cao, X., Thoms, S. , Macintyre, D. , McLelland, H., Boyd, E., Elgaid, K. , Hill, R., Stanley, C.R. , and Thayne, I.G. (2004) Fabrication and performance of 50 nm T-gates for InP high electron mobility transistors. Microelectronic Engineering, 73-74 . pp. 818-821. ISSN 0167-9317 (doi:10.1016/j.mee.2004.03.058)

Blaikie, RJ, Drysdale, TD , Chong, HMH, Thayne, IG , and Cumming, DRS (2004) Wide-field-of-view photonic bandgap filters micromachined from silicon. Microelectronic Engineering, 73-4 . pp. 357-361. (doi:10.1016/j.mee.2004.02.069)

Boyd, E, Thoms, S , Moran, DAJ , Elgaid, K , Cao, X, Holland, M, Stanley, CR , and Thayne, IG (2004) Fabrication of very high performance 50nm T-gate metamorphic GaAs HEMT's with exceptional uniformity. In: European Gallium Arsenide and other Compound Semiconductors Application Symposium,GaAs 2004, Amsterdam, The Netherlands.

Boyd, E, Zhou, H , McLelland, H , Moran, DAJ , Thoms, S , and Thayne, IG (2004) Fabrication of 30nm T-gate high electron mobility transistors using bi-layer of PMMA and UVIII. In: Conference on Optoelectronic and Microelectronic materials and devices 2004, Brisbane, Australia.

Boyd, E., Zhou, H. , McLelland, H. , Moran, D.A.J. , Thoms, S. , and Thayne, I.G. (2004) Fabrication of 30nm T-gate high electron mobility transistors using a bi-Layer of PMMA and UVIII. In: 2004 IEEE Conference on Optoelectronic and Microelectronic Materials and Devices, 8-10 December 2004, Brisbane, Australia.

Burns, GW, Thayne, IG , and Arnold, JM (2004) Improvement of Planar Antenna efficiency when intergrated with a millimetre-wave photonic circuit. In: 34th European Microwave Conference, Amsterdam, The Netherlands.

Burns, GW, Thayne, IG , and Arnold, JM (2004) Improvement of Planar Antenna efficiency when intergrated with a millimetre-wave photonic circuit. In: 2004 International symposium on Antennas and propagation, Sendai, Japan.

Burns, GW, Thayne, IG , and Arnold, JM (2004) Integration of millimeter-wave planar antennas with photonic crystal structures. In: 27th ESA Antenna Technology workshop on Innovative Periodic Antennas, Seville, Spain.

Cao, X, Elgaid, K , McLelland, H , Stanley, CR , and Thayne, IG (2004) High performance 50nm T-gate In0.52Al0.48As/In0.7Ga0.3As psuedomorphic high electron mobility transistors. In: 16th International Conference on Indium phosphide and Related Materials, Kagoshima, Japan.

Cao, X, Thoms, S , Stanley, CR , and Thayne, IG (2004) High yield, high uniformity, high performance 50nm T-gate In0.52Al0.48As/In0.7Ga0.3As. In: 7th International Conference on Solid State and Intergrated Circuit Technology, Beijing, China.

Elgaid, K, McLelland, H , Cao, X, Boyd, E, Moran, DAJ , Thoms, S , Zhou, H , Wilkinson, CDW , Stanley, CR , and Thayne, IG (2004) An array-based design methodology for the realisation of 94GHz MMMIC amplifiers. In: European Gallium Arsenide and other Compound Semiconductors Application Symposium,GaAs 2004, Amsterdam, The Netherlands.

Elgaid, K, McLelland, H , Cao, X, and Thayne, IG (2004) Integration of a novel, high quality Si3N4 metal insulator metal (MIM) capacitors deposited by (ICP-CVD) at room temperature with 50nm T-gate metamorphic HEMTS to realise monolithic millimetre-wave integrated circuits (MMMICs). In: 16th International Conference on Indium phosphide and Related Materials, Kagoshima, Japan.

Elgaid, K, Zhou, H, Wilkinson, CDW, and Thayne, IG (2004) Low temperature high density Si3N4 MIM capacitor technology for MMMIC and RF-MEMs applications. Microelectronic Engineering, 73-4 . pp. 452-455. (doi:10.1016/j.mee.2004.03.016)

Elgaid, K, Zhou, H , Wilkinson, CDW , and Thayne, IG (2004) Low temperature high density highly uniform Si3N4 technology for passive and active devices in MMMIC applications. In: GaAs Mantech 2004, Tampa, USA.

Johnson, N, Khokhar, AZ , Elgaid, K , Thayne, IG , Drysdale, TD , and Cumming, DRS (2004) Tools for metamaterials applications from GHz to optical frequencies. In: First Workshop of the Metamorphose, Lille-Louvain-la-Neuve, Belgium, France.

Li, X, Elgaid, K , McLelland, H , and Thayne, IG (2004) Surface mass spectrometric analysis of SiCl4/SiF4/O2 dry-etch gate recessed 120nm T-gate HEMTs. In: Microelectronic and Nanoelectronic Engineering 2004, Rotterdam, The Netherlands.

McGregor, I, Whyte, G , Wasige, E , and Thayne, IG (2004) UWB test system. In: 7th Analog Signal Processing Conference, Oxford, UK.

Moran, D.A.J., Boyd, E., Elgaid, K. , McEwan, F., McLelland, H., Stanley, C.R. , and Thayne, I.G. (2004) Self-aligned T-gate InP HEMT realisation through double delta doping and a non-annealed ohmic process. Microelectronic Engineering, 73-74 . pp. 814-817. ISSN 0167-9317 (doi:10.1016/j.mee.2004.03.057)

Moran, D.A.J., Boyd, E., McEwan, F., McLelland, H., Stanley, C.R. , and Thayne, I.G. (2004) Sub 100nm T-Gate uniformity in InP HEMT technology. In: International Conference on Compound Semiconductor Manufacturing Technology, 3-6 May 2004, Miami, Florida, USA.

Moran, DAJ, Boyd, E, Elgaid, K , McEwan, F, McLelland, H, Stanley, CR , and Thayne, IG (2004) Self-aligned T-gate InPHEMT realisation through double delta doping and a non-annealed ohmic process. Microelectronic Engineering, 73-4 . pp. 814-817. (doi:10.1016/j.mee.2004.03.057)

Moran, DAJ, Boyd, E, Elgaid, K , McLelland, H , Stanley, CR , and Thayne, IG (2004) 50nm T-gate lattice-matched InP HEMTs with fT of 430GHz using non-annealed ohmic contact process. In: European Gallium Arsenide and other Compound Semiconductors Application Symposium,GaAs 2004, Amsterdam, The Netherlands.

Smith, P, and Thayne, IG (2004) An array-based design methodology for 10GHz SiGe LC oscillators. In: 34th European Microwave Conference, Amsterdam, The Netherlands.

Thayne, IG, Cao, X, Moran, DAJ , Boyd, E, Elgaid, K , McLelland, H , Holland, M, Thoms, S , and Stanley, CR (2004) Very high performance 50nm T-gate III-V HEMTs enabled by robust nanofabrication technologies. In: 4th IEEE Conference on Nanotechnology, Munich, Germany.

Thayne, I., Cao, X., Moran, D.A.J. , Boyd, E., Elgaid, K. , McLelland, H., Holland, M., Thoms, S. , and Stanley, C. (2004) Very high performance 50 nm T-gate III-V HEMTs enabled by robust nanofabrication technologies. In: 4th IEEE Conference on Nanotechnology 2004, 16-19 August 2004, Munich, Germany.

Thoms, S, Macintyre, DS , Elgaid, K , Stanley, CR , and Thayne, IG (2004) The use of imprint lithography to fabricate high electron mobility transistors. In: International Conference on Electron, Photon, Ion beams and Nanofabrication, San Diego, USA.

Thoms, S, Macintyre, DS , Moran, D , and Thayne, I (2004) Imprint lithography issues in the fabrication of high electron mobility transistors. Journal of Vacuum Science and Technology B, 22 . pp. 3271-3274. (doi:10.1116/1.1821504)

Yang, L, Asenov, A , Watling, JR , Borici, M, Barker, JR , Roy, S , Elgaid, K , Thayne, I , and Hackbarth, T (2004) Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs. Microelectronics Reliability, 44 . pp. 1101-1107. (doi:10.1016/j.microrel.2004.04.003)

2003

Chen, Y., MacIntyre, D.S., Cao, X., Boyd, E., Moran, D.A.J. , McLelland, H., Holland, M., Stanley, C.R. , Thayne, I. , and Thoms, S. (2003) Fabrication of ultrashort T gates using a PMMA/LOR/UVIII resist stack. Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, 21 (6). pp. 3012-3016. ISSN 1071-1023 (doi:10.1116/1.1629292)

Moran, D., Boyd, E., McLelland, H., Elgaid, K. , Chen, Y., Macintyre, D.S. , Thoms, S. , Stanley, C.R. , and Thayne, I.G. (2003) Novel technologies for the realisation of GaAs pHEMTs with 120 nm self-aligned and nanoimprinted T-gates. Microelectronic Engineering, 67-89 . pp. 769-774. ISSN 0167-9317 (doi:10.1016/S0167-9317(03)00137-0)

Blaikie, RJ, Drysdale, TD , Chong, H, Thayne, IG , and Cumming, DRS (2003) Wide field of view photonic bandgap filters micromachined from silicon. In: Microelectronic and Nanoelectronic Engineering 2003, Cambridge, UK.

Blaikie, RJ, Drysdale, TD , Cumming, DRS , Chong, H, and Thayne, IG (2003) Wide field of view, narrow bandwidth filters using photonic bandgap metamaterials. In: Progress in Electromagnetics, Honolulu, Hawaii.

Burns, G, and Thayne, IG (2003) Integration of millimetre-wave planar antennas with photonic crystal structures. In: IEEE AP-S Topical Conference on Wireless Communications Technology, Honolulu.

Cao, X, Boyd, E, McLelland, H , Thoms, S , Stanley, CR , and Thayne, IG (2003) mm-wave performance of 50nm T-gate AlGaAs/InGaAs pseudomorphic high electron mobility transistors with fT of 200GHz. In: European Microwave Conference, Munich, Germany.

Cao, X, and Thayne, I (2003) Novel high uniformity highly reproducible non-selective wet digital gate recess etch process for InPHEMTs. Microelectronic Engineering, 67-8 . pp. 333-337. (doi:10.1016/S0167-9317(03)00087-X)

Cao, X, and Thayne, IG (2003) High uniformity highly reproducible non-selective wet gate recess etch process for InP HEMT's. In: GaAs MANTECH, Scottsdale, USA.

Cao, X, Thoms, S , Holland, MC , Stanley, CR , and Thayne, IG (2003) High performance 50nm T-gate In0.25AlAs/In0.53GaAs Metamorphic high electron mobility transistors. In: ESSDERC 2003 - European Solid-State Device Research Conference, Estoril, Portugal.

Cao, X, Thoms, S , Holland, MC , Stanley, CR , and Thayne, IG (2003) mm-wave performance of 50nm T-gate In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistors. In: European Microwave Conference, Munich, Germany.

Cao, X, Thoms, S , Macintyre, DS , McLelland, H , Boyd, E, Elgaid, K , Hill, R , Stanley, CR , and Thayne, IG (2003) Fabrication and performance of 50nm T-gate for high electron mobility transistors. In: Microelectronic and Nanoelectronic Engineering 2003, Cambridge, UK.

Chen, Y, Macintyre, DS , Boyd, E, Moran, D , Thayne, I , and Thoms, S (2003) High electron mobility transistors fabricated by nanoimprint lithography. Microelectronic Engineering, 67-8 . pp. 189-195. (doi:10.1016/S0167-9317(03)00183-7)

Chen, Y, Macintyre, DS , Gourlay, D, Boyd, E, Moran, D, Cao, X, Thayne, IG , and Thoms, S (2003) The fabrication of 50nm T-gates using a PMMA.LOR.UVIII resist stack. In: EIPBN 2003 - Electron, ion and photon beam tehcnology and nanofabrication, Tampa, USA.

Elgaid, K, McCloy, DA, and Thayne, IG (2003) Micromachined SU8 negative resist for MMIC applications on low resistivity CMOS substrates. Microelectronic Engineering, 67-8 . pp. 417-421. (doi:10.1016/S0167-9317(03)00188-6)

Elgaid, K, and Thayne, IG (2003) Passvie and active devices using Si and SiGe for MMIC applications. In: 3rd ESA Workshop on mm-wave Technology, Helsinki, Finland.

Elgaid, K, Zhou, H , Wilkinson, CDW , and Thayne, IG (2003) Low temperature high density Si3N4 MIM capacitors technology for MMIC and RF-MEMs applications. In: Microelectronic and Nanoelectronic Engineering, Cambridge, UK.

Macintyre, DS, Chen, Y, Gourlay, D, Boyd, E, Moran, D , Cao, X, Elgaid, K , Stanley, CR , Thayne, I , and Thoms, S (2003) Nanoimprint lithography process optimization for the fabrication of high electron mobility transistors. Journal of Vacuum Science and Technology B, 21 . pp. 2783-2787. (doi:10.1116/1.1629719)

Moran, D, Boyd, E, McLelland, H, Elgaid, K , Chen, Y, Macintyre, DS , Thoms, S , Stanley, CR , and Thayne, IG (2003) Novel technologies for the realisation of GaAs pHEMTs with 120 nm self-aligned and nanoimprinted T-gates. Microelectronic Engineering, 67-8 . pp. 769-774. (doi:10.1016/S0167-9317(03)00137-0)

Moran, D, Kalna, K , Elgaid, K , McEwan, F, McLelland, H , Zhuang, LL, Thayne, IG , Stanley, CR , and Asenov, A (2003) Self-aligned 0.12micron T-gate InGaAs/InAlAs HEMT technology utilizing a non-annealed contact strategy. In: ESSDERC 2003 - European Solid-State Device Research Conference, Estoril, Portugal.

Moran, D.A.J., Kalna, K. , Boyd, E., McEwan, F., McLelland, H., Zhuang, L.L., Stanley, C.R. , Asenov, A. , and Thayne, I. (2003) Self-aligned 0.12 /spl mu/m T-gate In/sub .53/Ga/sub .47/As/In/sub .52/Al/sub .48/As HEMT technology utilising a non-annealed ohmic contact strategy. In: ESSDERC '03 : 33rd Conference on European Solid-State Device Research, 16-18 September 2003, Estoril, Portugal.

Thayne, IG (2003) Sub-100nm III-V and Si/SiGe HEMT MMIC technologies for millimetre-wave applications beyond 100GHz. In: European Microwave Conference, Munich, Germany.

Yang, L, Asenov, A , Watling, JR , Borici, M, Barker, JR , Roy, S , Elgaid, K , Thayne, IG , and Hackbarth, T (2003) Optimisation of sub 11nm Si/SiGe MODFETs for high linearity applications. In: 14th Workshop on Modeling and Simulation of Electron Devices, Barcelona, Spain.

Yang, L, Asenov, A , Watling, JR , Borici, M, Barker, JR , Roy, S , Elgaid, K , Thayne, IG , and Hackbarth, T (2003) Optimisation of sub 11nm Si/SiGe MODFETs for high linearity applications. In: IEEE Conference on Electron devices and solid state circuits, Hong Kong.

Yang, L., Asenov, A. , Borici, M., Watling, J. R. , Barker, J. R., Roy, S. , Elgaid, K. , Thayne, I. , and Hackbarth, T. (2003) Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications. In: IEEE Conference on Electron Devices and Solid-State Circuits, 16-18 December 2003, Kowloon, Hong Kong.

2002

Boyd, E, Moran, D, McLelland, H , Elgaid, K , Chen, Y, Macintyre, DS , Thoms, S , Stanley, CR , and Thayne, IG (2002) 120nm gate length e-beam and nanoimprint T-gate GaAs pHEMTs itilising non-annealed ohmic contacts. In: International Symposium on Compound Semiconductors, Lausanne, Switzerland.

Burns, G, Chong, H, Edgar, DL, Ross, A , Elgaid, K , McLelland, H , Ferguson, S , McEwan, F, and Thayne, IG (2002) Millimetre-wave high frequency photonic crystal antennas. In: IEEE 2002 High Frequency Postgraduate Student Colloquium, London, UK.

Cao, X, and Thayne, IG (2002) Novel high uniformity highly reproducible non-selective wet recess etch for InP HEMTs. In: Microelectronic and Nanoelectronic Engineering 2002, Lugano, Switzerland.

Chen, Y, Macintyre, D , Boyd, E, Moran, D , Thayne, I , and Thoms, S (2002) Fabrication of high electron mobility transistors with T-gates by nanoimprint lithography. Journal of Vacuum Science and Technology B, 20 . pp. 2887-2890. (doi:10.1116/1.1520564)

Edgar, DL et al. (2002) Millimeter-wave performance of In/AlAs/InGaAs HEMT's using a UVIII/PMMA bilayer for 70nm T-gate fabrication. In: European Microwave Conference, Milan, Italy.

Elgaid, K, McCloy, DA, Edgar, DL, and Thayne, IG (2002) Coplanar waveguide and spiral inductors for MMIC applications on low resistivity CMOS grade silicon using micromachined SU8 negative resist. In: European Microwave Conference, Milan, Italy.

Elgaid, K, McCloy, DA, Ferguson, S , and Thayne, IG (2002) Coplanar waveguide and spiral inductors for MMIC applications on low resistivity CMOS grade silicon using micromachined SU8 negative resist. In: Asia Pacific Conference, Kyoto, Japan.

Elgaid, K, McCloy, DA, and Thayne, IG (2002) Micromachined SU8 negative resist for MMIC applications on low resistivity CMOS substrate. In: Microelectronic and Nanoelectronic Engineering 2002, Lugano, Switzerland.

Kalna, K, Roy, S , Asenov, A , Elgaid, K , and Thayne, I (2002) Scaling of pseudomorphic high electron mobility transistors to decanano dimensions. Solid-state Electronics, 46 . pp. 631-638.

Lee, HK, Loyo-Maldonado, V, Qiu, BC, Lee, KL, Shu, C, Pinches, S, Thayne, IG , Bryce, AC , and Marsh, JH (2002) Efficient direct locking of colliding pulse mode-locked lasers on semi-insulating substrate at 1.5 mu m. IEEE Photonics Technology Letters, 14 . pp. 1049-1051.

Moran, D, Boyd, E, McLelland, H , Elgaid, K , Chen, Y, Macintyre, DS , Thoms, S , Stanley, CR , and Thayne, IG (2002) Novel technologies for the realisation of GaAs pHEMTs wtih 20nm self-aligned and nanoimprinted T-gates. In: Micro- and NanoEngineering 2002, Lugano, Switzerland.

Smith, P, and Thayne, IG (2002) 7.6GHz and 10GHz VC)s in 0.6mu m SiGe bipolar process using an array-based approach. In: IEEE 2002 High Frequency Postgraduate Student Colloquium, London, UK.

Yanson, DA, Street, MW, McDougall, SD, Thayne, IG , Marsh, JH , and Avrutin, EA (2002) Ultrafast harmonic mode-locking of monolithic compound-cavity laser diodes incorporating photonic-bandgap reflectors. IEEE Journal of Quantum Electronics, 38 . pp. 1-11.

2001

Li, X., Elgaid, K. , McLelland, H., and Thayne, I.G. (2001) Effects of pressure and capping layer thickness on sub-micron T-gate recess etching of GaAs p-HEMTs by SiCl4/SiF4/O2 reactive ion etch. Microelectronic Engineering, 57-58 . pp. 633-640. ISSN 0167-9317 (doi:10.1016/S0167-9317(01)00495-6)

Arnold, JM, Reynolds, AL, Chong, H, Thayne, IG , Bonar, J, Jubber, M, and De,Maagt,, P (2001) Silicon PBG crystals for 100GHz and 500GHz. In: 24th ESTEC Antenna Workshop on Innovative Periodic Antennas, Noordwijk, The Netherlands.

Chongcheawchamnan, M, Nam, S, Robertson, ID, Elgaid, K , and Thayne, IG (2001) Ultrawideband characterisation of CPW GaAs monolithic 60 GHz couplers using overlaid structures. In: Asia pacific microwave conference, Taipei.

Kalna, K, Asenov, A , Elgaid, K , and Thayne, I (2001) Scaling of pHEMTs to decanano dimensions. Vlsi Design, 13 . pp. 435-439.

Li, X, Elgaid, K , McLelland, H, and Thayne, IG (2001) Effects of pressure and capping layer thickness on sub-micron T-gate recess etching of GaAs p-HEMTs by SiCl4/SiF4/O-2 reactive ion etch. Microelectronic Engineering, 57-8 . pp. 633-640.

Reynolds, AL, Chong, H, Thayne, IG , de Maagt, PJI, and Arnold, JM (2001) Transmission response for in-plane and out of plane propagation for a 2D photonic crystal with a planar cavity. Synthetic Metals, 116 . pp. 433-437.

Reynolds, AL, Chong, HMH, Thayne, IG , Arnold, JM , and de Maagt, P (2001) Analysis of membrane support structures for integrated antenna usage on two-dimensional photonic-bandgap structures. IEEE Transactions on Microwave Theory and Techniques, 49 . pp. 1254-1261.

Thayne, I (2001) Fabrication of on-wafer MMIC compatible integrated NiCr loads. Microelectronic Engineering, 57-58 . pp. 801-806.

Thayne, I.G., Ternent, G. , and Edgar, D.L. (2001) Devices and fabrication technology. In: Lucyszyn, S. (ed.) RFIC and MMIC Design and Technology. Series: IEE circuits, devices and systems series (13). IEE Press, London, UK, pp. 31-81. ISBN 9780852967867

Yanson, DA, Street, MW, McDougall, SD, Thayne, IG , Marsh, JH , and Avrutin, EA (2001) Terahertz repetition frequencies from harmonic mode-locked monolithic compound-cavity laser diodes. Applied Physics Letters, 78 . pp. 3571-3573.

Yip, JGM, Collier, RJ, Jastrebski, AK, Edgar, DL, Elgaid, K , Thayne, IG , and Li, D (2001) Substrate-modes in doubled-layered coplanar waveguide. In: European Microwave Conference, London.

Young, PR, McPherson, DS, Chrisostomidis, C, Elgaid, K , Thayne, IG , Lucyszyn, S, and Robertson, ID (2001) Accurate non-uniform transmission line model and its application to the de-embedding of on-wafer measurements. Iee Proceedings-microwaves Antennas and Propagation, 148 . pp. 153-156.

2000

Kalna, K., Asenov, A. , Elgaid, K. , and Thayne, I. (2000) Effect of impact ionization in scaled pHEMTs. In: 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications., 13-14 November 2000, Glasgow, UK.

Kalna, K., Asenov, A. , Elgaid, K. , and Thayne, I. (2000) Performance of aggressively scaled pseudomorphic HEMTs: a monte carlo simulation study. In: Third International EuroConference on Advanced Semiconductor Devices and Microsystems., 16-18 October 2000, Smolenice Castle, Slovakia.

Kalna, K., Roy, S. , Asenov, A. , Elgaid, K. , and Thayne, I. (2000) RF analysis of aggressively scaled pHEMTs. In: 30th European Solid-State Device Research Conference., 11-13 September 2000, Cork, Ireland.

1999

Ternent, G., Asenov, A. , Thayne, I.G. , MacIntyre, D.S., Thom, S., Wilkinson, C.D.W., Parker, E.H.C., and Gundlach, A.M. (1999) SiGe p-channel MOSFETs with tungsten gate. Electronics Letters, 35 (5). pp. 430-431. ISSN 0013-5194 (doi:10.1049/el:19990305)

1997

Borsosfoldi, Z., Webster, D.R., Thayne, I.G. , Asenov, A. , Haigh, D.G., and Beaumont, S.P. (1997) Ultra-linear pseudomorphic HEMTs for wireless communications: A simulation study. In: IEEE International Symposium on Compound Semiconductors, 8-11 September 1997, San Diego, California.