2011

Benbakhti, B. et al. (2011) Numerical analysis of the new implant-free quantum-well CMOS: DualLogic approach. Solid-State Electronics, 63 (1). pp. 14-18. ISSN 00381101 (doi:10.1016/j.sse.2011.05.006)

Towie, E., Watling, J. , and Barker, J. (2011) Remotely screened electron-impurity scattering model for nanoscale MOSFETs. Semiconductor Science and Technology, 26 (5). 055008. ISSN 0268-1242 (doi:10.1088/0268-1242/26/5/055008)

Benbakhti, B., Kalna, K. , Chan, K.H., Towie, E. , Hellings, G., Eneman, G., De Meyer, K., Meuris, M., and Asenov, A. (2011) Design and analysis of the In_0.53Ga_0.47As implant-free quantum-well device structure. Microelectronic Engineering, 88 (4). pp. 358-361. ISSN 0167-9317 (doi:10.1016/j.mee.2010.11.019)

2010

Benbakhti, B. et al. (2010) Performance analysis of the new implant-free quantum-well CMOS : DualLogic approach. Solid State Electronics Journal . (Unpublished)

Benbakhti, B., Towie, E. , Kalna, K. , Hellings, G., Eneman, G., De Meyer, K., Meuris, M., and Asenov, A. (2010) Monte Carlo Analysis of In_0.53Ga_0.47As implant-free Qqantum-well device performance. In: 2010 Silicon Nanoelectronics Workshop, 13-14 June 2010, Hilton Hawaiian Village, Honolulu, Hawaii.

Benbakhti, B., Towie, E. , Kalna, K. , Hellings, G., Eneman, G., De Meyer, K., Meuris, M., and Asenov, A. (2010) Monte carlo analysis of In0.53 Ga047 as implant-free quantum-well device performance. In: Silicon Nanoelectronics Workshop (SNW), 2010, 13th & 14th June, 2010, Honolulu, Hawaii.

2008

Barker, J. R., Towie, E. , and Watling, J. R. (2008) The influence of polarisation and image charges on Electron-Impurity Scattering in High Degeneracy, Nanometre Scale Silicon wrap-round gate MOSFETs - art. no. 012009. In: Goodnick, S.M. and Ferry, D.K. (eds.) International Symposium on Advanced Nanodevices and Nanotechnology. Series: Journal of Physics Conference Series (109). IOP Publishing, Bristol, p. 12009. ISBN 1742-6588